Abstract: A profiled contact for a device, such as a high power semiconductor device is provided. The contact is profiled in both a direction substantially parallel to a surface of a semiconductor structure of the device and a direction substantially perpendicular to the surface of the semiconductor structure. The profiling can limit the peak electric field between two electrodes to approximately the same as the average electrical field between the electrodes, as well as limit the electric field perpendicular to the semiconductor structure both within and outside the semiconductor structure.

Abstract: A system and method is disclosed for providing a redistribution metal layer in an integrated circuit. The redistribution metal layer is formed from the last metal layer in the integrated circuit during manufacture of the integrated circuit before final passivation is applied. The last metal layer provides sites for solder bump pads used in flip chip interconnection. The redistribution metal layer can be (1) a flat layer deposited over the next to last metal layer through an opening in a dielectric layer, or (2) deposited over an array of vias connected to the next to last metal layer. Space between the solder bump pads is deposited with narrower traces for connecting active circuit areas below. A final passivation layer is deposited to ensure product reliability.

Abstract: In a static memory cell comprising six MOS transistors, the MOS transistors have a structure in which the drain, gate and source formed on the substrate are arranged in the vertical direction and the gate surrounds the columnar semiconductor layer, the substrate comprises a first active region having a first conductive type and a second active region having a second conductive type, and diffusion layers constructing the active regions are mutually connected via a silicide layer formed on the substrate surface, thereby realizing an SRAM cell with small surface area. In addition, drain diffusion layers having the same conductive type as a first well positioned on the substrate are surrounded by a first anti-leak diffusion layer and a second anti-leak diffusion layer having a conductive type different from the first well and being shallower than the first well, and thereby controlling leakage to the substrate.

Abstract: A process margin of an interconnect is to be expanded, to minimize the impact of vibration generated during a scanning motion of a scanning type exposure equipment. In a semiconductor device, the interconnect handling a greater amount of data (frequently used interconnect) is disposed in a same orientation such that the longitudinal direction of the interconnects is aligned with a scanning direction of a scanning type exposure equipment, in an interconnect layer that includes a narrowest interconnect or a narrowest spacing between the interconnects. Aligning thus the direction of the vibration with the longitudinal direction of the pattern can minimize the positional deviation due to the vibration.

Abstract: A method and structure for an unencapsulated wafer section such as a wafer chip scale package (WCSP) includes a plurality of interconnect terminals and a pad metallization structure on an active surface of a WCSP chip. An area of the pad metallization structure is larger than an area of one of the interconnect terminals and, in an embodiment, larger than an area of two interconnect terminals. A plurality of conductive interconnects are attached to the plurality of interconnect terminals. The conductive interconnects are placed in contact with first lands of a supporting substrate, which can be a printed circuit board. Subsequently, a conductive mass is electrically coupled with a second land of the receiving substrate, with the second land being connected to at least one via of the supporting substrate which can, in turn, be connected to a plane of the supporting substrate. Improved thermal characteristics can result.

Abstract: The present invention provides an interconnect structure in which a patternable low-k material is employed as an interconnect dielectric material. Specifically, this invention relates to single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric. In general terms, the interconnect structure includes at least one patterned and cured low-k dielectric material located on a surface of a substrate. The at least one cured and patterned low-k material has conductively filled regions embedded therein and typically, but not always, includes Si atoms bonded to cyclic rings via oxygen atoms. The present invention also provides a method of forming such interconnect structures in which no separate photoresist is employed in patterning the patterned low-k material.

Abstract: Disclosed are a system and method of separate probe and bond regions of an integrated circuit (IC). An IC, an I/O region adjacent to the core region to enable the core region, and a die metal interconnect separating a bond pad area in the I/O region from a probe pad area outside the I/O region of the IC are disclosed. The die metal interconnect may have a length that is greater than the bond pad area length and/or the probe pad area length, and a width that is less than the bond pad area width and/or the probe pad area width. An in-front staggering technique may be used at a die corner of the IC to maintain the bond pad area in the I/O region, and a side staggering technique may be used at the die corner of the IC to maintain the bond pad area in the I/O region.

Abstract: Methods and apparatus for forming through-vias are presented, for example, a method for forming a via in a portion of a semiconductor wafer comprising a substrate. The method comprises forming a trench surrounding a first part of the substrate such that the first part is separated from a second part of the substrate, forming a hole through the substrate within the first part, and forming a first metal within the hole. The trench extends through the substrate. The first metal extends from a front surface of the substrate to a back surface of the substrate. The via comprises the hole and the first metal.

Abstract: In a semiconductor wafer, the polyimide film underneath a power metal structure is partially etched to create corresponding surface depressions of the conformal top power metal. The depressions at the surface of power metal are visible under optical microscopy. Arrangement of the depressions in a pattern facilitates the alignment of probe needles, set-up of automated wire bonding and microscopic inspection for precise alignment of wire bonds.

Abstract: One aspect of the present invention is a semiconductor device including: a semiconductor substrate; a first wiring that is formed on the semiconductor substrate; a second wiring that is formed to cross over the first wiring with a space interposed therebetween at a cross portion in which the first wiring and the second wiring cross each other; a protective film that is formed on the semiconductor substrate to cover at least a part of the first wiring, the part being located under the second wiring in the cross portion; and an insulator film that is formed in an island shape on the protective film under the second wiring in the cross portion to be located between edges of the protective film and to cover the first wiring in the cross portion.

Abstract: In the current manufacturing process of LSI, or semiconductor integrated circuit device, the step of assembling device (such as resin sealing step) is normally followed by the voltage-application test (high-temperature and high-humidity test) in an environment of high temperature (such as an approximate range from 85 to 130° C.) and high humidity (such as about 80% RH). For that test, the inventors of the present invention found the phenomenon of occurrence of separation of titanium nitride film as the anti-reflection film from upper film and of generation of cracks in the titanium nitride film at an edge part of upper surface of the aluminum-based bonding pad applied with a positive voltage during the high-temperature and high-humidity test caused by an electrochemical reaction due to moisture incoming through the sealing resin and the like to generate oxidation and bulging of the titanium nitride film.

Abstract: A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes a plurality of bit lines having a uniform width on a semiconductor substrate, an active region obliquely arranged to have a predetermined angle with respect to the bit lines, a spacer arranged around the bit lines connected to a center part of the active region. A contact pad is connected to a lower part of the bit lines. The spacer is formed not only at an upper part of sidewalls of the contact pad but also at sidewalls of the bit lines. As a result, a CD of the bit line contact increases, so that a bit line contact patterning margin also increases. A bit line pattern having a uniform width is formed so that a patterning margin increases. A storage electrode contact self-alignment margin increases so that a line-type storage electrode contact margin increases.

Abstract: A method of forming a semiconductor structure is provided. One method comprises forming a device region between a substrate and a bond pad. Patterning a conductor between the bond pad and the device region with gaps. Filling the gaps with insulation material that is harder than the conductor to form pillars of relatively hard material that extend through the conductor and forming an insulation layer of the insulation material between the conductor and the bond pad.

Abstract: A sensor device includes a substrate which includes an element forming region, a plurality of sensor elements formed in the element forming region, a plurality of connection pads formed on a region of the substrate other than the element forming region, a plurality of first wiring formed on the substrate and electrically connected with the plurality of sensor elements, a plurality of second wiring formed on the substrate and electrically connected with the plurality of connection pads, a plurality of third wiring formed on a different layer to the plurality of first wiring and the plurality of second wiring and formed to intersect with the plurality of first wiring and the plurality of second wiring, and an insulation layer formed between the plurality of first wiring, the plurality of second wiring and the plurality of third wiring.

Abstract: A semiconductor device is composed of: an interconnect made of a first conductive film and a second conductive film that are stacked in sequence from the interconnect underside on an insulating film formed on a substrate; and a capacitor composed of a lower capacitor electrode made of the first conductive film, a dielectric film formed on the lower capacitor electrode, and an upper capacitor electrode made of the second conductive film and formed on the dielectric film.

Abstract: A pad (20) is electrically connected to a first I/O cell (14) while also physically overlying active circuitry of a second I/O cell (16). Note that although the pad (20) overlies the second I/O cell (16), the pad (20) is not electrically connected to the I/O cell (16). Such a pattern may be replicated in any desired manner so that the I/O cells (e.g. 300-310) may have a finer pitch than the corresponding pads (320-324 and 330-335). In addition, the size of the pads may be increased (e.g. pad 131 may be bigger than pad 130) while the width “c” of the I/O cells (132-135) does not have to be increased. Such a pattern (e.g. 500) may be arranged so that the area required in one or more dimensions may be minimized.

Abstract: A deposition method of fine particles, includes the steps of irradiating a fine particle beam formed by size-classified fine particles to an irradiated subject under a vacuum state, and depositing the fine particles on a bottom part of a groove structure formed at the irradiated subject.

Abstract: A semiconductor device and method of fabricating the same reduce the likelihood of the occurrence of electrical defects. The device includes a first interlayer insulating film on a semiconductor substrate; a contact pad spacer on the first interlayer insulating film; and a contact pad in the first interlayer insulating film and the contact pad spacer. The cross-sectional area of an upper portion of the contact pad in the contact pad spacer in a direction horizontal to the substrate is equal to or less than a cross-sectional area of an intermediate portion at an interface between the contact pad spacer and the first interlayer insulating film in a direction horizontal to the substrate.

Abstract: A semiconductor substrate includes a first conductive layer formed over the semiconductor substrate. The first conductive layer has first and second portions which are electrically isolated during formation of the first conductive layer. A solder resist layer is formed over the first conductive layer and semiconductor substrate. An opening is formed in the solder resist layer to expose the first conductive layer. A seed layer is formed over the semiconductor substrate and first conductive layer within the opening. A second conductive layer is formed over the seed layer within the opening. The opening may expose the second portion of the first conductive layer due to solder resist registration shifting causing a defect condition. The second conductive layer electrically contacts the first and second portions of the first conductive layer. By testing the first and second portions of the first conductive layer, the defect condition can be identified.

Abstract: A semiconductor device and manufacturing method. One embodiment provides a device including a semiconductor chip. A first conductor line is placed over the semiconductor chip. An external contact pad is placed over the first conductor line. At least a portion of the first conductor line lies within a projection of the external contact pad on the semiconductor chip.

Abstract: A method of manufacturing a semiconductor device including an integrated circuit part in which an integrated circuit is formed and a main wall part including metal films surrounding said integrated circuit part, includes the step of selectively forming a sub-wall part including metal films between the integrated circuit part and the main wall part, in parallel to formation of the integrated circuit part and the main wall part. A sub-wall part which is in an “L” shape is provided between each corner of the main wall part and the integrated circuit part of the resulting semiconductor device.

Abstract: Methods of forming pad structures are provided in which a first contact region and second contact regions are formed in an active region of a substrate. An insulating interlayer is formed on the substrate. The insulating interlayer has a first opening that exposes the first contact region and the second contact regions. First conductive pads are formed in the first opening. Each first conductive pad is in electrical contact with a respective one of the second contact regions. Spacers are formed, where each spacer is on a sidewall of a respective one of the first conductive pads. Finally, a second conductive pad is formed between the first conductive pads and in electrical contact with the first contact region to complete the pad structure.

Abstract: A liquid crystal display has a pad structure. The pad structure includes at least one pad formed on a substrate, an insulating film formed on the pad, and at least one conductive layer connected to the pad through contact holes defined through the insulating film. The insulating film covers side surfaces of the pad and a portion of the substrate adjacent to the side surfaces of the pad.

Abstract: Disclosed is a method of manufacturing a semiconductor device that does not have a defect, such as wire breakage, due to an uplifted portion created at a rewiring pattern in a multilayer wire structure. Before a wiring layer is formed on an insulation layer, the insulation layer is exposed via a mask. The mask has a weak exposure part and a strong exposure part. The mask is positioned such that the weak exposure part corresponds to an arrangement position of a wire line of an underlying wiring layer, and such that the strong exposure part corresponds to an arrangement position of a via part of the underlying wiring layer. The underlying wiring layer is a layer immediately below the insulation layer.

Abstract: A method for producing a semiconductor component with an easily solderable contact structure comprising the provision of a semiconductor substrate of a planar design with a first side, a second side, a surface normal standing vertically thereon, a dielectric passivation layer arranged on at least one of the sides and a first contact layer arranged on passivation layer, the application, at least in some areas, of at least one second contact layer onto the first contact layer, the at least one second contact layer comprising at least a partial layer made of an easily solderable metal, especially of nickel and/or silver and/or tin and/or a compound thereof, and the making of an electrically conductive contact between the second contact layer and the semiconductor substrate.

Abstract: One or more embodiments of the present invention relates to a method for passivating metallic interconnects, said method including: forming a metallic conductor embedded in at least one surrounding dielectric layer, said metallic conductor including a metal or alloy chosen from a group consisting of Cu, Ag, and alloys including one or more of these metals, said metallic conductor and said at least one surrounding dielectric layer having top surfaces; and forming a capping passivation film directly on the top surface of the metallic conductor, but not over the top surface of the at least one surrounding dielectric layer, wherein said capping passivation film including one or more materials selected from the group consisting of copper sulfide, silver sulfide, copper selenide, silver selenide, copper telluride, and silver telluride, wherein the copper sulfide refers to CuSX or Cu2SX, the silver sulfide refers to AgSX or Ag2SX, the copper selenide refers to CuSeXor Cu2SeX, and the copper telluride refers to CuTeX

Abstract: A manufacturing method of a substrate for a semiconductor package includes a resist layer forming step to form a resist layer on a surface of a conductive substrate; an exposure step to expose the resist layer using a glass mask with a mask pattern including a transmission area, a light shielding area, and an intermediate transmission area, wherein transmittance of the intermediate transmission area is lower than that of the transmission area and is higher than that of the light shielding area; a development step to form a resist pattern including a hollow with a side shape including a slope part decreasing in hollow circumference as the hollow circumference approaches the substrate; and a plating step to plate on an exposed area to form a metal layer with a side shape including a slope part decreasing in circumference as the circumference approaches the substrate.

Abstract: Disclosed herein is a fabrication method of a semiconductor device to order to increase an operation liability of the semiconductor device. A method for fabricating a semiconductor device comprises forming a recess in a semiconductor substrate, forming a word line in a lower part of the recess, oxidizing a top portion of the word line, and depositing an insulating material in a remained part of the recess.

Abstract: A semiconductor device includes a substrate including a trench, a buried gate filling a part of the trench, an inter-layer dielectric layer formed on the buried gate to gap-fill the rest of the trench, and a protection layer covering substantially an entire surface of the substrate including the inter-layer dielectric layer.

Abstract: A semiconductor device including a plurality of input/output cells and having a first bond pad and at least one second bond pad coupled to each input/output cell. The first bond pads comprise a first pattern, and the at least second bond pads comprise at least one second pattern, wherein the at least one second pattern is different from or the same as the first pattern. Either the first bond pads, the at least second bond pads, or both, may be used to electrically couple the input/output cells of the semiconductor device to leads of an integrated circuit package or other circuit component.

Abstract: The present invention relates to a stress buffering package (49) for a semiconductor component, with a semiconductor substrate (52); an I/O pad (54), electrically connected to the semiconductor substrate (52); a stress buffering element (74) for absorbing stresses, electrically connected to the I/O pad (54); an underbump metallization (70), electrically connected to the stress buffering element (74); a solder ball (60), electrically connected to the underbump metallization (70); a metal element (61) between the solder ball (60) and the semiconductor substrate (52); a passivation layer (56, 58), which protects the semiconductor substrate (52) and the metal element (61) and which at least partially exposes the I/O pad (54); characterized in that a roughness of an interface between the stress buffering element (74) and the passivation layer (56, 58) is lower than a roughness of an interface between the metal element (61) and the passivation layer (56, 58).

Abstract: A process for forming a local interconnect includes applying a layer of metal over a semiconductor layer. A layer of metal silicide is formed over the layer of metal. The layer of metal silicide is patterned to define the boundaries of the local interconnect. The metal silicide is reacted with the layer of metal to form a composite structure. The composite structure includes the metal silicide, another metal silicide formed as silicon from the metal silicide reacts with the underlying layer of metal and an intermetallic compound of the metal from the layer of metal and metal from the layer of metal silicide. The unreacted layer of metal is removed with the composite structure remaining as the local interconnect.

Abstract: A process of cleaning wire bond pads associated with OLED devices, including the steps of depositing on the wire bond pads one or more layers of ablatable material, and ablating the one or more layers with a laser, thereby exposing a clean wire bond pad.

Abstract: A bonding pad structure of a semiconductor device and a method of manufacturing the same reduce the likelihood of peel-off defects from occurring. The bonding pad structure includes a substrate, an interlayer insulation layer on the substrate, an upper wiring layer on the interlayer insulation layer, and a plurality of lower wiring layers disposed in the interlayer insulation layer between the upper wiring layer and the substrate and configured to prevent the interlayer insulation layer from cracking especially during a wire bonding process in which a wire is bonded to the upper wiring layer. For example, the respective areas occupied by the lower wiring layers sequentially increase in the interlayer insulation layer in a downward direction from the upper wiring layer towards the substrate. Also, each of the lower wiring layers may project further inwardly toward a central part of the bonding pad than the lower layer of wiring disposed above it in the interlayer insulation layer.

Abstract: An integrated circuit structure and a method of forming the same are provided. The method includes providing a surface; performing an ionized oxygen treatment to the surface; forming an initial layer comprising silicon oxide using first process gases comprising a first oxygen-containing gas and tetraethoxysilane (TEOS); and forming a silicate glass over the initial layer. The method may further include forming a buffer layer using second process gases comprising a second oxygen-containing gas and TEOS, wherein the first and the second process gases have different oxygen-to-TEOS ratio.

Abstract: A process for structuring at least one layer as well as an electrical component with structures from the layer are described. The invention states a process to generate at least one structured layer (10A), wherein a mask structure (20) with a first (20A) and second structure (20B) is generated on a layer (10) which is present on a substrate (5). Through this mask structure (20), the first layer (20A) is transferred onto the layer (10) using isotropic structuring processes, and the second structure (20B) is transferred onto the layer (10) using anisotropic structuring processes. The process as per the invention permits the generation of two structures (20A, 20B) in at least a single layer while using a single mask structure.

Abstract: Electronic elements (44, 44?, 44?) having an active device region (46) and bonding pad (BP) region (60) on a common substrate (45) desirably include a dielectric region underlying the BP (35) to reduce the parasitic impedance of the BP (35) and its interconnection (41) as the electronic elements (44, 44?, 44?) are scaled to higher power and/or operating frequency. Mechanical stress created by plain (e.g., oxide only) dielectric regions (36?) can adversely affect performance, manufacturing yield, pad-to-device proximity and occupied area. This can be avoided by providing a composite dielectric region (62, 62?, 62?) having electrically isolated inclusions (65, 65?, 65?) of a thermal expansion coefficient (TEC) less than that of the dielectric material (78, 78?, 78?) in which they are embedded and/or closer to the substrate (45) TEC. For silicon substrates (45), poly or amorphous silicon is suitable for the inclusions (65, 65?, 65?) and silicon oxide for the dielectric material (78, 78?, 78?).

Abstract: A method of manufacturing a semiconductor device includes providing a substrate having a first conductive layer disposed on a top surface of the substrate. A high resistivity layer is formed over the substrate and the first conductive layer. A dielectric layer is deposited over the substrate, first conductive layer and high resistivity layer. A portion of the dielectric layer, high resistivity layer, and first conductive layer forms a capacitor stack. A first passivation layer is formed over the dielectric layer. A second conductive layer is formed over the capacitor stack and a portion of the first passivation layer. A first opening is etched in the dielectric layer to expose a surface of the high resistivity layer. A third and fourth conductive layer is deposited over the first opening in the dielectric layer and a portion of the first passivation layer.

Abstract: A semiconductor device including a semiconductor substrate having source/drain regions, a gate electrode formed on and/or over the semiconductor substrate, spacers formed against sidewalls of the gate electrode, an interlayer insulating layer formed over the semiconductor substrate and the gate electrode and having a plurality of contact holes formed therein, and contact plugs formed within the contact holes. The contact plugs can include a first contact plug and a second contact plug electrically connected to the gate electrode, and a third contact plug and a fourth contact plug electrically connected to the source/drain regions.

Abstract: A semiconductor device includes: a plurality of semiconductor substrates each having a pad-formed surface and being mutually laminated; a connection electrode pad formed on the pad-formed surface; a wire connecting the connection electrode pads of the plurality of semiconductor substrates so as to electrically connect the semiconductor substrates; a relay electrode pad that is provided on the pad-formed surface of a lower one of the laminated semiconductor substrates so as to be exposed by an upper one of the laminated semiconductor substrates, and that is connected to the connection electrode pad by a relay wire included in the wire; and a mounting electrode pad that is formed on a mounting surface on which the laminated semiconductor substrates are mounted, and that is connected to the relay electrode pad of the lower semiconductor substrate by the wire.

Abstract: A semiconductor device and its manufacturing method are offered to increase the number of semiconductor devices obtained from a semiconductor wafer while simplifying a manufacturing process. After forming a plurality of pad electrodes in a predetermined region on a top surface of a semiconductor substrate, a supporter is bonded to the top surface of the semiconductor substrate through an adhesive layer. Next, an opening is formed in the semiconductor substrate in a region overlapping the predetermined region. A wiring layer electrically connected with each of the pad electrodes is formed in the opening. After that, a stacked layer structure including the semiconductor substrate and the supporter is cut by dicing along a dicing line that is outside the opening.

Abstract: A method for manufacturing semiconductor device which includes forming a first metal film over an electrode pad disposed on a substrate, forming a second metal film on the first metal film, forming a first oxide film on a surface of the first metal film and a second oxide film on a surface of the second metal film by oxidizing the surfaces of the first metal film and the second metal film, removing the first oxide film, and melting the second metal film after removing the first oxide film.

Abstract: The semiconductor device includes a silicon substrate, a device isolation insulating film dividing an active region of the silicon substrate into plural pieces, a gate electrode formed on the active region, a source/drain region which is formed in the active region on both sides of the gate electrode, and which constitutes a MOS transistor of an SRAM memory cell with the gate electrode, an interlayer insulating film formed over each of the active region and the device isolation insulating film, a first hole which is formed in the interlayer isolation insulating film, and which commonly overlaps with two adjacent active regions and the device isolation insulating film between the active regions, and a first conductive plug which is formed in the first hole, and which electrically connects the two active regions.

Abstract: A semiconductor device that includes an electrode of one material and a conductive material of lower resistivity formed over the electrode and a process for fabricating the semiconductor device.

Abstract: An integrated circuit package comprising an integrated circuit that includes transistors coupled to copper interconnect structures. The integrated circuit package also comprises copper pads located on the integrated circuit and directly contacting uppermost ones of the copper interconnect structures. Each of copper pads has a thickness of at least about 2 microns. The integrated circuit package further comprises copper wires pressure-welded directly to the copper pads.

Abstract: An integrated circuit package employs a solder pad that includes a predetermined three dimensional surface that is adapted to receive solder. In one example, the predetermined three dimensional surface includes at least one predetermined hill or protruding portion and a valley portion, such as a lower portion, having a predetermined relative height between the hill portion and a valley portion. The predetermined three dimensional surface can be configured in any suitable configuration and may include contoured patterns, non-patterns, or any other suitable configuration as desired. A related method is also described.

Abstract: A method that suppresses etching damage without increasing a chip area of a semiconductor device. An integrated circuit including a MOS transistor is formed in a device area, and a discharge diffusion region is formed in a device area, and a discharge diffusion region is formed in a grid area. The discharge diffusion region is connected to a metal wiring of the integrated circuit via a contact hole. Therefore, when the metal wiring is formed by a dry etching method, an electric charge stored in the metal wiring is discharged to a semiconductor substrate through the discharge diffusion region. Thus, etching damage of the MOS transistor is reduced. Since the discharge diffusion region and the contact hole are formed within the grid area, they are cut off by a dicing process, thus causing no increase in chip area of the semiconductor device.

Abstract: A semiconductor device and a method for manufacturing the same include forming a second copper-plated layer over a second IMD layer and inside a second aperture formed in the second IMD by an electroplating process that uses the exposed first copper-plated layer as a seed layer. With the method, the copper-plated layer may be more simply and rapidly formed and achieve superior gap filling characteristics.

Abstract: A semiconductor device has contact between the last interconnect layer and the bond pad that includes a barrier metal between the bond pad and the last interconnect layer. Both a passivation layer and a polyimide layer separate the last interconnect layer and the bond pad. The passivation layer is patterned to form a first opening to contact the last interconnect layer. The polyimide layer is also patterned to leave a second opening that is inside and thus smaller than the first opening through the passivation. The barrier layer is then deposited in contact with the last interconnect layer and bounded by the polyimide layer. The bond pad is then formed in contact with the barrier, and a wire bond is then made to the bond pad.

Abstract: A structure for suppressing localized metal precipitate formation (LMPF) in semiconductor processing. For each metal wire that is exposed to the manufacturing environment and is electrically coupled to an N region, at least one P+ region is formed electrically coupled to the same metal wire. As a result, few excess electrons are available to combine with metal ions to form localized metal precipitate at the metal wire. A monitoring ramp terminal can be formed around and electrically disconnected from the metal wire. By applying a voltage difference to the metal wire and the monitoring ramp terminal and measuring the resulting current flowing through the metal wire and the monitoring ramp terminal, it can be determined whether localized metal precipitate is formed at the metal wire.