Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a substrate; mounting an integrated circuit over the substrate; attaching a buffer interconnect to and over the substrate; forming an encapsulation over the substrate covering the buffer interconnect and the integrated circuit; and forming a via in the encapsulation and to the buffer interconnect.

Abstract: A semiconductor device has a first interconnect structure. A first semiconductor die has an active surface oriented towards and mounted to a first surface of the first interconnect structure. A first encapsulant is deposited over the first interconnect structure and first semiconductor die. A second semiconductor die has an active surface oriented towards and mounted to a second surface of the first interconnect structure opposite the first surface. A plurality of first conductive pillars is formed over the second surface of the first interconnect structure and around the second semiconductor die. A second encapsulant is deposited over the second semiconductor die and around the plurality of first conductive pillars. A second interconnect structure including a conductive layer and bumps is formed over the second encapsulant and electrically connects to the plurality of first conductive pillars and the first and second semiconductor die.

Abstract: A flip chip package may include a substrate, a semiconductor chip, main bump structures and auxiliary bump structures. The substrate has a circuit pattern. The semiconductor chip is arranged over the substrate. The semiconductor chip includes a body having semiconductor structures, main pads electrically connected to the semiconductor structures to mainly control the semiconductor structures, and auxiliary pads electrically connected to the semiconductor structures to provide auxiliary control of the semiconductor structures. The main bump structures are interposed between the semiconductor chip and the substrate to electrically connect the circuit pattern with the main pads. The auxiliary bump structures can be interposed between the semiconductor chip and the substrate to electrically connect the circuit pattern with the auxiliary pads.

Abstract: A semiconductor device has a semiconductor die and substrate with a plurality of stud bumps formed over the semiconductor die or substrate. The stud bumps include a base portion and stem portion extending from the base portion. The stud bumps include a non-fusible material or fusible material. The semiconductor die is mounted to the substrate with the stud bumps electrically connecting the semiconductor die to the substrate. A width of the base portion is greater than a mating conductive trace formed on the substrate. Alternatively, a vertical interconnect structure, such as a conductive column, is formed over the semiconductor die or substrate. The conductive column can have a tapered sidewall or oval cross sectional area. An underfill material is deposited between the semiconductor die and substrate. The semiconductor die includes a flexible property. The vertical interconnect structure includes a flexible property. The substrate includes a flexible property.

Abstract: In a structure for connecting a semiconductor element having a fine pitch electrode at 50 ?m pitch or less and a pad or wirings on a substrate, for preventing inter-bump short-circuit or fracture of a connected portion due to high strain generated upon heating or application of load during connection, the substrate and the semiconductor element are connected by way of a bump having a longitudinal elastic modulus (Young's modulus) of 65 GPa or more and 600 GPa or less and a buffer layer including one of tin, aluminum, indium, or lead as a main ingredient and, further, protrusions are formed to at least one of opposing surfaces of the bump and the pad or the wirings on the substrate to each other, and the surfaces are connected by ultrasonic waves.

Abstract: A method for fabricating a semiconductor chip module and a semiconductor chip package is disclosed. One embodiment provides a first layer, a second layer, and a base layer. The first layer is disposed on the base layer, and the second layer is disposed on the first layer. A plurality of semiconductor chips is applied above the second layer, and the second layer with the applied semiconductor chips is separated from the first layer.

Abstract: A method for manufacturing a semiconductor device includes forming an electrode pad in a surface layer of an insulating layer; disposing a conductive particle, of which at least a portion of the surface is coated with a thermoplastic resin, over the electrode pad; and fixing the conductive particle over the electrode pad using the resin, by heating the resin to soften the resin, and then cooling and solidifying the resin after the conductive particle and the electrode pad are electrically connected to each other, to form the conductive particle as an external connection terminal.

Abstract: An embodiment of the disclosure provides a semiconductor device. The semiconductor device includes a plurality of metallization layers comprising a topmost metallization layer. The topmost metallization layer has two metal features having a thickness T1 and being separated by a gap. A composite passivation layer comprises a HDP CVD oxide layer under a nitride layer. The composite passivation layer is disposed over the metal features and partially fills the gap. The composite passivation layer has a thickness T2 about 20% to 50% of the thickness T1.

Abstract: A structure and a method of manufacturing a Pb-free Controlled Collapse Chip Connection (C4) with a Ball Limiting Metallurgy (BLM) structure for semiconductor chip packaging that reduce chip-level cracking during the Back End of Line (BEOL) processes of chip-join cool-down. An edge of the BLM structure that is subject to tensile stress during chip-join cool down is protected from undercut of a metal seed layer, caused by wet etch of the chip to remove metal layers from the chip's surface and solder reflow, by an electroplated barrier layer, which covers a corresponding edge of the metal seed layer.

Abstract: A semiconductor device includes a first semiconductor die or component having a plurality of bumps, and a plurality of first and second contact pads. In one embodiment, the first and second contact pads include wettable contact pads. The bumps are mounted directly to a first surface of the first contact pads to align the first semiconductor die or component. An encapsulant is deposited over the first semiconductor die or component. An interconnect structure is formed over the encapsulant and is connected to a second surface of the first and second contact pads opposite the first surface of the first contact pads. A plurality of vias is formed through the encapsulant and extends to a first surface of the second contact pads. A conductive material is deposited in the vias to form a plurality of conductive vias that are aligned by the second contact pads to reduce interconnect pitch.

Abstract: A package structure is provided that includes a metal plate; a semiconductor chip having an active surface, electrode pads disposed on the active surface, conductive bumps disposed on the electrode pads, and an inactive surface opposing the active surface and attached with the metal plate by a thermal conductive adhesive; an encapsulant formed on the metal plate for encapsulating a perimeter of the semiconductor chip, with the active surface of the semiconductor chip being exposed thereon; a first dielectric layer formed on the encapsulant and the active surface of the semiconductor chip, and having wiring trenches for exposing the conductive bumps; and a first wiring layer formed in the wiring trenches of the first dielectric layer and electrically connected to the conductive bumps. The wiring layer, through the electrical connection of the conductive bumps with the semiconductor chip prevents the use of bonding wires as a conductive pathway.

Abstract: The substrate for a semiconductor package includes a substrate body having a first surface and a second surface opposite to the first surface. Connection pads are formed near an edge of the first surface. Signal lines having conductive vias and first, second, and third line parts are formed. The first line parts are formed on the first surface and are connected to the connection pads and the conductive vias, which pass through the substrate body. The second line parts are formed on the first surface and connect to the conductive vias. The third line parts are formed on the second surface and connect to the conductive vias. The second and third line parts are formed to have substantially the same length. The semiconductor package utilizes the above substrate for processing data at a high speed.

Abstract: A method of making a semiconductor device includes providing a substrate and forming a conductive layer on the substrate. The conductive layer includes a first metal. A semiconductor die is provided. A bump is formed on the semiconductor die. The bump includes a second metal. The semiconductor die is positioned proximate to the substrate to contact the bump to the conductive layer and form a bonding interface. The bump and the conductive layer are metallurgically reacted at a melting point of the first metal to dissolve a portion of the second metal from an end of the bump. The bonding interface is heated to the melting point of the first metal for a time sufficient to melt a portion of the first metal from the conductive layer. A width of the conductive layer is no greater than a width of the bump.

Abstract: A semiconductor device having conductive bumps and a fabrication method thereof is proposed. The fabrication method includes the steps of forming a first metallic layer on a substrate having solder pads and a passivation layer formed thereon, and electrically connecting it to the solder pads; applying a second covering layer over exposed parts of the first metallic layer; subsequently, forming a second metallic layer on the second covering layer, and electrically connecting it to the exposed parts of the first metallic layer; applying a third covering layer, and forming openings for exposing parts of the second metallic layer to form thereon a conductive bump having a metallic standoff and a solder material. The covering layers and the metallic layers can provide a buffering effect for effectively absorbing the thermal stress imposed on the conductive bumps to prevent delamination caused by the UBM layers.

Abstract: A method and structure for forming a semiconductor device, for example a device including a wafer chip scale package (WCSP), can include the formation of at least one conductive layer which contacts a bond pad. The at least one conductive layer can be patterned using a first mask, then a passivation layer can be formed over the patterned at least one conductive layer. The passivation layer can be patterned using a second mask to expose the at least one conductive layer, then a conductive layer such as a solder ball, conductive bump, metal-filled paste, or another conductor is formed on the at least one conductive layer. The method can result in a structure which is formed using a reduced number of mask steps.

Abstract: A semiconductor device has a semiconductor die with a plurality of bumps formed over the die. A substrate has a plurality of conductive traces formed on the substrate. Each trace has an interconnect site for mating to the bumps. The interconnect sites have parallel edges along a length of the conductive traces under the bumps from a plan view for increasing escape routing density. The bumps have a noncollapsible portion for attaching to a contact pad on the die and fusible portion for attaching to the interconnect site. The fusible portion melts at a temperature which avoids damage to the substrate during reflow. The noncollapsible portion includes lead solder, and fusible portion includes eutectic solder. The interconnect sites have a width which is less than 1.2 times a width of the conductive trace. Alternatively, the interconnect sites have a width which is less than one-half a diameter of the bump.

Abstract: This invention discloses an electronic package for containing a vertical semiconductor chip that includes a laminated board having a via connector and conductive traces distributed on multiple layers of the laminated board connected to the via connector. The semiconductor chip having at least one electrode connected to the conductive traces for electrically connected to the conductive traces at a different layer on the laminated board and the via connector dissipating heat generated from the vertical semiconductor. A ball grid array (BGA) connected to the via connector functioning as contact at a bottom surface of the package for mounting on electrical terminals disposed on a printed circuit board (PCB) wherein the laminated board having a thermal expansion coefficient in substantially a same range the PCB whereby the BGA having a reliable electrical contact with the electrical terminals.

Abstract: A semiconductor device, includes a semiconductor substrate; and a solder bump part, which is formed on the semiconductor substrate and in which no grain boundary extends equal to or over ? of a diameter dimension of said solder bump part from an outer circumferential surface between an end of a connection part with the semiconductor substrate and a lateral portion.

Abstract: A semiconductor device has a semiconductor chip mounted on a circuit board. The semiconductor chip includes: a semiconductor substrate; a first pad formed on the semiconductor substrate; a second pad formed on the first pad via an interlayer insulating film; a via formed through the interlayer insulating film for connecting the first pad with the second pad; a protection film that is formed on the second pad and has an opening exposing a center portion of the second pad; and a barrier metal layer formed on the portion of the second pad exposed from the opening of the protection film and on a portion of the protection film surrounding the opening. The diameter of the via is smaller than the diameter of the opening of the protection film, and the center of the via corresponds with the center of the barrier metal layer.

Abstract: A semiconductor device is provided that includes a substrate having opposing first and second surfaces and an interconnect structure extending between the first and second surfaces. A plurality of bond pads are located on the first surface of the substrate and the bond pads are electrically connected to the interconnect structure. The bond pads each have two or more micro-bumps, with the two or more micro-bumps on each bond pad being arranged to electrically connect the bond pad to one die pad of a semiconductor die. A plurality of external contacts are located on the second surface of the substrate and the external contacts are electrically connected to the interconnect structure.

Abstract: In one embodiment, a collar structure includes a non-conductive layer that relieves stress around the perimeter of each of the solder balls that connect the semiconductor die to the semiconductor chip package substrate, and another non-conductive layer placed underneath to passivate the entire surface of the die.

Abstract: A semiconductor device is disclosed wherein a tin diffusion inhibiting layer is provided above the land of a wiring line, and a solder ball is provided above the tin diffusion inhibiting layer. Thus, even when this semiconductor device is, for example, a power supply IC which deals with a high current, the presence of the tin diffusion inhibiting layer makes it possible to more inhibit the diffusion of tin in the solder ball into the wiring line.

Abstract: In a stacked-type semiconductor device, a first semiconductor device and at least one second semiconductor device are stacked. The first semiconductor device includes a wiring board and a first semiconductor chip mounted on the wiring board. The second semiconductor device includes a wiring board and a second semiconductor chip mounted on the wiring board. The thickness of the second semiconductor chip of each second semiconductor device is thicker than the thickness of the first semiconductor chip.

Abstract: A rewiring is formed by forming a Cu seed layer of copper over an opening and insulating films, forming a photoresist film over the Cu seed layer, a step of forming copper film by plating-growth over the Cu seed layer, and forming a Ni film. After forming an Au film in an opening (pad region) over the rewiring, the photoresist film is removed and passivation processing is performed on the Ni film. Then, the Cu seed layer other than the formation region of the rewiring is etched. According to these steps, a passivation film is formed on the surface of the Ni film and the reduction in film thickness of the Ni film by the etching can be reduced. Furthermore, it is possible to reduce trouble due to distortion of a substrate resulting from an increase in thickness of the Ni film in view of reduction in film thickness.

Abstract: A wiring substrate includes: a semiconductor chip on which a plurality of bumps are mounted, and a plurality of connection pads which are joined to the bumps mounted on the semiconductor chip in a flip chip method, wherein the connection pads of a peripheral portion of the wiring substrate are formed in a non-solder mask defined structure, and the connection pads of a center portion of the wiring substrate are formed in a solder mask defined structure.

Abstract: A semiconductor module comprising a plurality of semiconductor chips where at least one semiconductor chip is laterally offset with respect to a second semiconductor chip, and substantially aligned with a third semiconductor chip such that an electrical connection can be made between an electrical contact in the first semiconductor chip and an electrical contact in the third semiconductor chip.

Abstract: An interconnect pad is formed over a first substrate. A photoresist layer is formed over the first substrate and interconnect pad. A portion of the photoresist layer is removed to form a channel and expose a perimeter of the interconnect pad while leaving the photoresist layer covering a central area of the interconnect pad. A first conductive material is deposited in the channel of the photoresist layer to form a column of conductive material. The remainder of the photoresist layer is removed. A masking layer is formed around the column of conductive material while exposing the interconnect pad within the column of conductive material. A second conductive material is deposited over the first conductive layer. The second conductive material extends above the column of conductive material. The masking layer is removed. The second conductive material is reflowed to form a column interconnect structure over the semiconductor device.

Abstract: A method for fabricating electrical bonding pads on one face of a wafer includes the production of electrically conductive areas and electrical connection branches connecting these conductive areas. A layer of mask material is deposited and openings are produced in this mask layer which extend above said conductive areas and at least some of which extend at least partly beyond the peripheral edges of the underlying conductive areas. Blocks made of a solder material are produces in the openings by electrodeposition in a bath. The mask material is then removed along with the connection branches. The wafer is passed through or placed in an oven so as to shape, on the conductive areas, the blocks into substantially domed electrical bonding pads.

Abstract: Substrate stand-offs for use with semiconductor devices are provided. Active pillars and dummy pillars are formed on a first substrate such that the dummy pillars may have a height greater than a height of the active pillars. The dummy pillars act as stand-offs when joining the first substrate to a second substrate, thereby creating greater uniformity. In an embodiment, the dummy pillars may be formed simultaneously as the active pillars by forming a patterned mask having openings with a smaller width for the dummy pillars than for the active pillars. When an electro-plating process of the like is used to form the dummy and active pillars, the smaller width of the dummy pillar openings in the patterned mask causes the dummy pillars to have a greater height than the active pillars.

Abstract: A bonding pad design is disclosed that includes one or more pad groups on a semiconductor device. Each pad group is made up of two or more bonding pads that have an alternating orientation, such that adjacent bonding pads have their bond ball on opposite sides in relation to the adjacent bonding pad.

Abstract: A bump structure includes a first substrate, a plurality of first bond pads, a plurality of dielectric bumps, a plurality of under bump metal layers, and a plurality of metal layers. The plurality of first bond pads are spaced apart on the first substrate. The plurality of dielectric bumps disposed corresponding to the first bond pads electrically isolate the first bond pads from each other. Each under bump metal layer is formed between the respective first bond pad and the dielectric bump, extending through a side surface of the respective dielectric bump, and correspondingly forming an extension portion between two adjacent dielectric bumps, wherein each extension portion has a length along the extending direction thereof shorter than the pitch between two adjacent dielectric bumps. Each metal layer is formed on the side surface of the respective dielectric bump and the respective extension portion.

Abstract: A semiconductor device includes a substrate, a first recessed conductive layer embedded and recessed into a first surface of the substrate, and a first raised conductive layer disposed above the first surface. A first vertical offset exists between an upper surface of the first recessed conductive layer and an upper surface of the first raised conductive layer. The device includes a second recessed conductive layer embedded and recessed into a second surface of the substrate. The second surface of the substrate is opposite the first surface. The device includes a second raised conductive layer disposed beneath the second surface and an interconnect structure disposed on the first recessed and raised conductive layers and the second recessed and raised conductive layers. A second vertical offset exists between a lower surface of the second recessed conductive layer and a lower surface of the second recessed conductive layer.

Abstract: A semiconductor wafer contains a plurality of semiconductor die each having a peripheral area around the die. A recessed region with angled or vertical sidewall is formed in the peripheral area. A conductive layer is formed in the recessed region. A first stud bump is formed over a contact pad of the semiconductor die. A second stud bump is formed over the first conductive layer within the recessed region. A bond wire is formed between the first and second stud bumps. A third stud bump is formed over the bond wire and first stud bump. A dicing channel partially formed through the peripheral area. The semiconductor wafer undergoes backgrinding to the dicing channel to singulate the semiconductor wafer and separate the semiconductor die. The semiconductor die can be disposed in a semiconductor package with other components and electrically interconnected through the bond wire and stud bumps.

Abstract: Highly reliable interconnections for microelectronic packaging. In one embodiment, dielectric layers in a build-up interconnect have a gradation in glass transition temperature; and the later applied dielectric layers are laminated at temperatures lower than the glass transition temperatures of the earlier applied dielectric layers. In one embodiment, the glass transition temperatures of earlier applied dielectric films in a build-up interconnect are increased through a thermosetting process to exceed the temperature for laminating the later applied dielectric films. In one embodiment, a polyimide material is formed with embedded catalysts to promote cross-linking after a film of the polyimide material is laminated (e.g., through photo-chemical or thermal degradation of the encapsulant of the catalysts).

Abstract: A semiconductor device includes: a pad that is formed on a semiconductor layer, contains Al, and has an interconnection portion that is formed outside a bonding area; an interconnection layer that contains Au and is electrically connected to the interconnection portion of the pad, an edge of the interconnection layer being formed outside of the bonding area; and a barrier layer that is provided between the interconnection portion and the interconnection layer.

Abstract: A packaged electronic device including a package substrate having a top substrate surface including a die attach region including at least one land pad thereon and a first dielectric layer positioned lateral to the land pad and a non-die attach region. The non-die attach region includes a second dielectric layer, wherein a thickness of the second dielectric layer is>a thickness of the first dielectric layer by at least 5 ?m. An IC die has a top semiconductor surface including active circuitry and at least one bonding conductor formed on the top semiconductor surface, and a bottom surface, wherein the bonding conductor of the IC die is joined to the land pad of the package substrate. An underfill layer is between the IC die and the die attach region.

Abstract: A flip chip package and a method of manufacturing the same are provided. The flip chip package include: a package substrate, a semiconductor chip and conductive hollow bumps. The semiconductor chip may be arranged over an upper surface of the package substrate. The conductive hollow bumps may be interposed between the semiconductor chip and the package substrate to electrically connect the semiconductor chip with the package substrate. Thus, a wide gap may be formed between the semiconductor chip and the package substrate by the thick conductive hollow bumps. As a result, a sufficient amount of the molding member may be supplied to each of the conductive hollow bumps to surround each of the conductive hollow bumps.

Abstract: A wafer level molding structure and a manufacturing method thereof are provided. A molding structure includes a first chip and a second chip and an adhesive layer there between. The first chip includes a first back side, a first front side and a plurality of lateral sides, in which a plurality of first front side bumps are disposed on the first front side. The second chip includes a second back side and a second front side, and a plurality of second back side bumps and second front side bumps are respectively disposed on the second back side and the second front side. A plurality of through-hole vias is disposed in the second chip, and electrically connected the second back side bumps to the second front side bumps. Adhesive materials covering the lateral sides of the first chip, and electrically connect the second back side bumps with the first front side bumps. The adhesive materials include a plurality of conductive particles and/or a plurality of non-conductive particles.

Abstract: A semiconductor package and method of forming the same is described. The semiconductor package is formed from a semiconductor die cut from a semiconductor wafer that has a passivation layer. The semiconductor wafer is exposed to ionized gas causing the passivation layer to roughen. The semiconductor wafer is cut to form a plurality of semiconductor dies each with a roughened passivation layer. The plurality of semiconductor dies are placed on an adhesive layer to form a reconstituted wafer, and an encapsulation layer is formed enclosing the adhesive layer and the plurality of semiconductor dies. The passivation layer is removed and the semiconductor package formed includes electrical contacts for establishing electrical connections external to the semiconductor package.

Abstract: The present disclosure is directed to a semiconductor die having a chip outline boundary, a die seal, a row of input/output contact pads separated from the chip outline boundary by the die seal, a first row of solder bump connections positioned between the row of input/output contact pads and the die seal, and a second row of solder bump connections separated from the first row of solder bump connections by the row of input/output contact pads.

Abstract: A method of fabricating a bonding structure having compliant bumps includes first providing a first substrate and a second substrate. The first substrate includes first bonding pads. The second substrate is disposed on one side of the first substrate and includes second bonding pads and compliant bumps disposed thereon. The second bonding pads are opposite to the first bonding pads. Next, a non-conductive adhesive layer and ball-shaped spacers are formed between the first and the second substrates. Finally, the first substrate, the non-conductive adhesive layer, and the second substrate are compressed, such that the compliant bumps on the second bonding pads of the second substrate pass through the non-conductive adhesive layer and are electrically connected to the first bonding pads of the first substrate, respectively. The ball-shaped spacers are distributed in the non-conductive adhesive layer sandwiched between the first and the second substrates for maintaining the gap therebetween.

Abstract: A die including a first set of power tiles arranged in a first array and having a first voltage; a second set of power tiles arranged in a second array offset from the first array and having a second voltage; a set of power mesh segments enclosed by the second set of power tiles and having the first voltage; a first power rail passing underneath the set of power mesh segments and the first set of power tiles; and a set of vias operatively connecting the power rail with the set of power mesh segments and the first plurality of power tiles.

Abstract: A semiconductor device according to the present embodiment includes a substrate including wirings. At least one first semiconductor chip is mounted on a first surface of the substrate and is electrically connected to any of the wirings. A first metal ball is provided on the first surface of the substrate and is electrically connected to the first semiconductor chip through any of the wirings. A first resin seals the wirings, the first semiconductor chip, and the first metal ball on the first surface of the substrate. A top of the first metal ball protrudes from a surface of the first resin and is exposed.

Abstract: A semiconductor device is made by providing a sacrificial substrate and depositing an adhesive layer over the sacrificial substrate. A first conductive layer is formed over the adhesive layer. A polymer pillar is formed over the first conductive layer. A second conductive layer is formed over the polymer pillar to create a conductive pillar with inner polymer core. A semiconductor die or component is mounted over the substrate. An encapsulant is deposited over the semiconductor die or component and around the conductive pillar. A first interconnect structure is formed over a first side of the encapsulant. The first interconnect structure is electrically connected to the conductive pillar. The sacrificial substrate and adhesive layers are removed. A second interconnect structure is formed over a second side of the encapsulant opposite the first interconnect structure. The second interconnect structure is electrically connected to the conductive pillar.

Abstract: A semiconductor device and a method for manufacturing the same are disclosed, which can prevent a short-circuit between a bit line contact plug and a storage node contact plug, resulting in improved semiconductor device characteristics. A method for manufacturing a semiconductor device includes: forming a bit line contact hole from which an active region is protruded, by etching a semiconductor substrate; forming a conductive material over the semiconductor substrate including the bit line contact hole; etching the conductive material to form a bit line contact plug and a bit line, each of which has a smaller width than the bit line contact hole; and forming a spacer insulation film over the entire surface of the semiconductor substrate including the bit line contact hole, the bit line contact plug, and the bit line.

Abstract: A semiconductor device with a cavity structure comprises: a carrier substrate; a first die having an active surface and the pads thereon; a back surface of the first die is disposed on the carrier substrate; a second die having a top surface and a back surface and a cavity structure therein; the top surface of a second die is flipped to dispose on the first die, and the cavity structure is an inverse U-type to dispose between the active surface of the first die and the top surface of the second die; the wires is electrically connected the pads with the first connecting points; a package body encapsulated the first die, the second die, the wires, and the portion of the top surface of the carrier substrate; and the connecting components is disposed on the back surface of the carrier substrate and is electrically connected the second connecting points.

Abstract: An interconnect structure comprises a solder including nickel (Ni) in a range of 0.01 to 0.20 percent by weight. The interconnect structure further includes an intermetallic compound (IMC) layer in contact with the solder. The IMC layer comprises a compound of copper and nickel.

Abstract: A semiconductor package is provided. The package includes a package substrate with a first surface and a second surface on the opposite side, and a plurality of via sets connecting vertically the first surface with the second surface, said via sets having a plurality of micro vias and filled with conductive material. The micro vias are grouped together, and the distance between micro vias in the via set is smaller than the distance between neighboring via sets.

Abstract: A bond pad and a method of making the same for a semiconductor die has a bonding region formed on the bond pad. A test region is formed on the bond pad and is adjacent to the bonding region.

Abstract: Wire bond pad and solder ball or controlled collapse chip connections C4 are combined on a planar surface of a an integrated circuit device to provide a die. Known good die (KGD) testing is optionally performed using wire bond connections or stress tolerant solder ball connections. The KGD testing is conducted after the integrated circuit dies are diced from a wafer. Solder ball or C4 array connections which withstand thermal stress are used to KGD test the die prior to final use of the wire bond pad connections to an end use device. Alternatively, wire bond pads are used to test the die while maintaining the solder ball or C4 array in a pristine condition for bonding to a final end product device. Both testing with the solder ball C4 array contacts and with the wire bond connections provides metallurgical connections for the KGD test. The solder ball or C4 array is connected to the wire bond pads and either connection can be used to burn-in test the die.