Abstract: Provided are a method of manufacturing a ZnO semiconductor layer for an electronic device, which can control the size of crystals of the ZnO semiconductor layer and the number of carriers using a surface chemical reaction between precursors, and a thin film transistor (TFT) including the ZnO semiconductor layer.
Type:
Application
Filed:
January 8, 2008
Publication date:
November 13, 2008
Inventors:
Sang Hee PARK, Chi Sun HWANG, Hye Yong CHU, Jeong Ik LEE
Abstract: A method of manufacturing a thin film transistor (“TFT”) substrate includes forming a first conductive pattern group including a gate electrode on a substrate, forming a gate insulating layer on the first conductive pattern group, forming a semiconductor layer and an ohmic contact layer on the gate insulating layer by patterning an amorphous silicon layer and an oxide semiconductor layer, forming a second conductive pattern group including a source electrode and a drain electrode on the ohmic contact layer by patterning a data metal layer, forming a protection layer including a contact hole on the second conductive pattern group, and forming a pixel electrode on the contact hole of the protection layer. The TFT substrate including the ohmic contact layer formed of an oxide semiconductor is further provided.
Type:
Application
Filed:
April 10, 2008
Publication date:
October 23, 2008
Applicant:
SAMSUNG ELECTRONICS CO., LTD.
Inventors:
Sung-Ryul KIM, Sung-Hoon YANG, Byoung-June KIM, Czang-Ho LEE, Jae-Ho CHOI, Hwa-Yeul OH, Yong-Mo CHOI
Abstract: The present invention relates to a semiconductor structure such as a field effect transistors (FETs) in which the channel region of each of the FETs is composed of an array of more than one electrically isolated channel. In accordance with the present invention, the distance between each of the channels present in the channel region is within a distance of no more than twice their width from each other. The FETs of the present invention are fabricated using methods in which self-assembled block copolymers are employed in forming the channel.
Type:
Application
Filed:
October 16, 2007
Publication date:
September 4, 2008
Applicant:
INTERNATIONAL BUSINESS MACHINES CORPORATION
Abstract: A method for fabricating a transistor having a Group III-V semiconductor substrate with an oxygen-free dielectric disposed between the substrate and a gate is described.
Type:
Application
Filed:
June 30, 2006
Publication date:
January 3, 2008
Inventors:
Matthew V. Metz, Mark L. Doczy, Suman Datta
Abstract: A thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and a compound thin film with ionic bonding, which is formed on the metal sulfide layer by epitaxial growth. Alternatively, a thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and at least two compound thin films with ionic bonding, which are formed on the metal sulfide layer by epitaxial growth. For example, (11 20) surface AlN/MnS/Si (100) thin films formed by successively stacking a MnS layer (about 50 nm thick) and an AlN layer (about 1000 nm thick) on a single crystal Si (100) substrate, are used as a substrate, and a (11 20) surface GaN layer (about 100 nm thick) operating as a light emitting layer is formed on the substrate, thereby fabricating a thin film device.
Type:
Grant
Filed:
September 22, 2003
Date of Patent:
August 21, 2007
Assignee:
Tokyo Institute of Technology
Inventors:
Hideomi Koinuma, Jeong-Hwan Song, Toyohiro Chikyo, Young Zo Yoo, Parhat Ahmet, Yoshinori Konishi, Yoshiyuki Yonezawa