Abstract: Provided are apparatus and methods for forming phase change layers, and methods of manufacturing a phase change memory device. A source material is supplied to a reaction chamber, and purges from the chamber. A pressure of the chamber is varied according to the supply of the source material and the purge of the source material.

Abstract: A phase change memory cell includes a first contact, a phase change region above and in contact with the first contact, an electrode region, and a second contact above and in contact with the electrode region. The phase change region surrounds the electrode region. The electrode region has a first surface in contact with the phase change region and a second surface in contact with the second contact, and the second surface is wider than the first surface.

Abstract: The invention relates to the production of a thin film having photovoltaic properties, containing a I-III-VI2-type alloy and deposited by electrolysis, including the following steps: (a) successive deposits of layers of metallic elements I and III; and (b) thermal post-treatment with the addition of element VI. In particular, step (a) comprises the following operations: (a1) depositing a multi-layer structure comprising at least two layers of element I and two layers of element III, deposited in an alternate manner, and (a2) annealing said structure before adding element VI in order to obtain a I-III alloy.

Abstract: Embodiments relate to a method for annealing a solar cell structure including forming an absorber layer on a molybdenum (Mo) layer of a solar cell base structure. The solar cell base structure includes a substrate and the Mo layer is located on the substrate. The absorber layer includes a semiconductor chalcogenide material. Annealing the solar cell base structure is performed by exposing an outer layer of the solar cell base structure to a plasma.

Abstract: A method of manufacturing a solar cell having increased light efficiency due to increased gallium distribution on a surface of a light absorption layer, the method including forming a first electrode on a substrate, forming a precursor that includes at least one of copper, gallium, and indium on the first electrode, forming a preliminary light absorption layer by providing selenium to the precursor, forming the preliminary light absorption layer further including performing a heat treatment, and forming a liquid state CuSe compound, forming a light absorption layer by providing a compound including at least one of gallium and indium to the preliminary light absorption layer, and forming a second electrode on the light absorption layer.

Abstract: Techniques for using electrodeposition to form absorber layers in diodes (e.g., solar cells) are provided. In one aspect, a method for fabricating a diode is provided. The method includes the following steps. A substrate is provided. A backside electrode is formed on the substrate. One or more layers are electrodeposited on the backside electrode, wherein at least one of the layers comprises copper, at least one of the layers comprises zinc and at least one of the layers comprises tin. The layers are annealed in an environment containing a sulfur source to form a p-type CZTS absorber layer on the backside electrode. An n-type semiconductor layer is formed on the CZTS absorber layer. A transparent conductive layer is formed on the n-type semiconductor layer. A diode is also provided.

Abstract: A localized surface plasmon resonance sensor may include a localized surface plasmon excitation layer including a chalcogenide material. The chalcogenide material may include: a first material including at least one of selenium (Se) and tellurium (Te); and a second material including at least one of germanium (Ge) and antimony (Sb). The localized surface plasmon excitation layer may be prepared by forming a thin film including the chalcogenide material and crystallizing the thin film to have a predetermined pattern by irradiating laser on the thin film.

Abstract: The present invention concerns a method of forming a chalcogenide thin film for a phase-change memory. In the method of forming a chalcogenide thin film according to the present invention, a substrate with a pattern formed is loaded into a reactor, and a source gas is supplied onto the substrate. Here, the source gas includes at least one source gas selected from germanium (Ge) source gas, gallium (Ga) source gas, indium (In) source gas, selenium (Se) source gas, antimony (Sb) source gas, tellurium (Te) source gas, tin (Sn) source gas, silver (Ag) source gas, and sulfur (S) source gas. A first purge gas is supplied onto the substrate in order to purge the source gas supplied onto the substrate, a reaction gas for reducing the source gas is then supplied onto the substrate, and a second purge gas is supplied onto the substrate in order to purge the reaction gas supplied onto the substrate.

Abstract: A method for manufacturing a thin film solar cell device includes forming a back contact layer on a substrate, forming an CIGS absorber layer on the back contact layer, treating the CIGS absorber layer with a metal-based alkaline solution, and forming a buffer layer on the CIGS absorber layer where the treatment of the CIGS absorber layer improves the adhesion between the CIGS absorber layer and the buffer layer and also improves the quality of the p-n junction at the CIGS absorber layer/buffer layer interface.

Abstract: A quantum dot, which is an ultrafine grain, has a core-shell structure having a core portion and a shell portion protecting the core portion. The surface of the shell portion is covered with two kinds of surfactants, a hole-transporting surfactant and an electron-transporting surfactant, which are concurrently present. Moreover, the hole-transporting surfactant has a HOMO level which tunneling-resonates with the valence band of the quantum dot and the electron-transporting surfactant has a LUMO level which tunneling-resonates with the transfer band of the quantum dot. Thus, a nanograin material which has good carrier transport efficiency and is suitable for use in a photoelectric conversion device is achieved.

Abstract: In particular embodiments, a method is described for forming photovoltaic devices that includes providing a substrate suitable for use in a photovoltaic device, depositing a conductive contact layer over the substrate, depositing a salt solution over the surface of the conductive contact layer, the solution comprising a volatile solvent and an alkali metal salt solute, and depositing a semiconducting absorber layer over the solute residue left by the evaporated solvent.

Abstract: In the present invention, copper(I) selenide (Cu2-xSe) nanoparticles are fabricated by pyrolysis in an inert atmosphere. Uniformly dispersed Cu2-xSe particles are synthesized by altering Cu/Se ratio, the concentration of Se Precursors (TOP Se), reaction time and temperature. Analysis by inductively coupled plasma atomic emission spectroscopy (ICP-AES) of said Cu2-xSe nanoparticles reveals that the composition of the nanoparticles is Cu 1.95Se, wherein x=0.05. In addition, Cu2-xSe is dissolved in ethanol to deposit thin films by electrophoretical deposition (EPD) in an inert atmosphere, wherein a positive electrode and a negative electrode are employed. The positive electrode is made of stainless steel plate and the negative electrode is made of indium tin oxide on a glass substrate. Investigations on properties and surface morphology thereof in different electrophoretical conditions are carried out. The rate of EPD is found to significantly influence the quality of thin films.

Abstract: Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.

Abstract: The invention relates to a solid material with the following formula (A): (Cu+1a-u; Ag+1u; Zn+2b-v-(y/2); Cd+2v; Sn+4c-w-(y/2); 1X+4w; 2X+3y; S?2x)(A), in which the solid material: is in divided state in the form of particles having a mean equivalent diameter of 15 nm to 400 nm; has, according to X-ray diffraction analysis of the solid material, a unique crystalline structure; is suitable for forming a stable dispersion of at least one solid material with formula (A) in a liquid, referred to as dispersion liquid, made up of at least one compound with a value of ?p higher than 8 and a value of ?H higher than 5.

Abstract: A radiation detector of this invention has a curable synthetic resin film covering exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a common electrode, in which a material allowing no chloride to mix in is used in a manufacturing process of the curable synthetic resin film. This prevents pinholes and voids from being formed by chlorine ions in the carrier selective high resistance film and semiconductor layer. Also a protective film which does not transmit ionic materials may be provided between the exposed surface of the common electrode and the curable synthetic resin film, thereby to prevent the carrier selective high resistance film from being corroded by chlorine ions included in the curable synthetic resin film, and to prevent an increase of dark current flowing through the semiconductor layer.

Abstract: A method for forming copper indium gallium (sulfide) selenide (CIGS) solar cells, cadmium telluride (CdTe) solar cells, and copper zinc tin (sulfide) selenide (CZTS) solar cells using laser annealing techniques to anneal the absorber and/or the buffer layers. Laser annealing may result in better crystallinity, lower surface roughness, larger grain size, better compositional homogeneity, a decrease in recombination centers, and increased densification. Additionally, laser annealing may result in the formation of non-equilibrium phases with beneficial results.

Abstract: Embodiments of a material having low cross-plane thermal conductivity are provided. Preferably, the material is a thermoelectric material. In general, the thermoelectric material is designed to block phonons, which reduces or eliminates heat transport due to lattice vibrations and thus cross-plane thermal conductivity. By reducing the thermal conductivity of the thermoelectric material, a figure-of-merit (ZT) of the thermoelectric material is improved. In one embodiment, the thermoelectric material includes multiple superlattice periods that block, or reflect, multiple phonon wavelengths.

Abstract: A method of production of a CIS-based thin film solar cell comprises the steps of forming an alkali control layer on a high strain point glass substrate, forming a back surface electrode layer on the alkali control layer, forming a CIS-based light absorption layer on the back surface electrode layer, and forming an n-type transparent conductive film on the CIS-based light absorption layer, wherein the alkali control layer is formed to a thickness which allows heat diffusion of the alkali metal which is contained in the high strain point glass substrate to the CIS-based light absorption layer and, furthermore, the CIS-based light absorption layer has an alkali metal added to it from the outside in addition to heat diffusion from the high strain point glass substrate.

Abstract: Apparatus and method for the formation of copper indium gallium diselenide (CIGS) photovoltaic devices are disclosed. In one aspect, an inline production apparatus and method is described comprising sputter deposition and solution based selenization, followed by thermal annealing. Copper, indium and gallium are sputter deposited on one or more substrates in a sputter chamber. The substrates are then coated with a solution comprising a source of selenium in a selenium coating chamber. After coating with the selenium based solution, the substrates are heated in an annealing chamber to form a CIGS layer on the substrate. Substrates are conveyed though each of the chambers in a continuous manner, which provides for low-cost, fast throughput, inline production of CIGS photovoltaic devices.

Abstract: The construction of this invention includes an active matrix substrate, an amorphous selenium layer, a high resistance layer, a gold electrode layer, an insulating layer and an auxiliary plate laminated in this order. In one aspect of the present invention, the insulating layer has an inorganic anion exchanger added thereto in order to provide a radiation detector which prevents void formation and pinhole formation in the amorphous semiconductor layer and carrier selective high resistance film, without accumulating electric charges on the auxiliary plate. The inorganic anion exchanger adsorbs chloride ions in the insulating layer, thereby preventing destruction of X-ray detector due to the chloride ions drawn to the gold electrode layer.

Abstract: A rapid thermal processing system includes a rapid thermal processing furnace, a back electrode substrate, and a cover. The rapid thermal processing furnace includes a reaction chamber and a heating device. The heating device is capable of generating heat energy. The back electrode substrate is adapted to dispose in the reaction chamber and has a precursor layer and a selenium layer formed on the precursor layer. The cover is disposed at a position corresponding to the selenium layer on the back electrode substrate and has a sulfur in solid form formed thereon, so as to make the sulfur in solid form opposite to the selenium layer. After the sulfur in solid form absorbs the heat energy generated by the heating device, the sulfur in solid form reacts with the selenium layer and the precursor layer to form a photoelectric transducing layer.

Abstract: A method of forming bit line aligned to a phase change material that includes forming a pedestal of a sacrificial material on a portion of a lower electrode and forming at least one dielectric material adjacent to the sacrificial material, wherein the at least one dielectric material has an upper surface substantially coplanar with an upper surface of the pedestal of the sacrificial material. The pedestal of the sacrificial material is removed selective to the at least one dielectric material and the lower electrode to provide an opening to an exposed surface of the lower electrode. A phase change material is formed on the exposed surface of the lower electrode, and the opening is filled with a conductive fill material. A self-aligned etch back process is also provided.

Abstract: An X-ray detector 1 includes: an X-ray conversion layer 17 which is made of amorphous selenium and absorbs incident radiation and generates charges; a common electrode 23 provided on a surface on the side on which radiation is made incident of the X-ray conversion layer 17; and a signal readout substrate 2 on which a plurality of pixel electrodes 7 for collecting charges generated by the X-ray conversion layer 17 are arrayed, and further includes: an electric field relaxation layer 13 provided between the X-ray conversion layer 17 and the signal readout substrate 2 and containing arsenic and lithium fluoride; a crystallization suppressing layer 11 provided between the electric field relaxation layer 13 and the signal readout substrate 2 and containing arsenic; and a first thermal property enhancement layer 15 provided between the electric field relaxation layer 13 and the X-ray conversion layer 17 and containing arsenic.

Abstract: Processes for making a photovoltaic layer on a substrate by depositing a first layer of an ink onto the substrate, wherein the ink contains one or more compounds having the formula MB(ER)3, wherein MB is In, Ga, or Al, E is S or Se, and depositing a second layer of one or more copper chalcogenides or a CIGS material.

Abstract: Methods for photovoltaic absorber materials for uses including solar cells. The methods include depositing onto a substrate an ink comprising one or more compounds having the formula MB(ER)3 wherein MB is In, Ga or Al, E is S or Se, and R is selected from alkyl, aryl, heteroaryl, alkenyl, amido, and silyl, and heating the substrate.

Abstract: The method and system for selenization in fabricating CIS and/or CIGS based thin film solar cell overlaying cylindrical glass substrates. The method includes providing a substrate, forming an electrode layer over the substrate and depositing a precursor layer of copper, indium, and/or gallium over the electrode layer. The method also includes disposing the substrate vertically in a furnace. Then a gas including a hydrogen species, a selenium species and a carrier gas are introduced into the furnace and heated to between about 350° C. and about 450° C. to at least initiate formation of a copper indium diselenide film from the precursor layer.

Abstract: A method for making a solar cell includes: (a) forming over a substrate a photoelectric transformation layer that is made of a chalcopyrite-based photovoltaic material; (b) performing an ion milling treatment, in which ions are injected to an upper surface of the photoelectric transformation layer at an ion incident angle with respect to the upper surface to partially etch the photoelectric transformation layer, so that the photoelectric transformation layer is formed with a plurality of nano-pillar structures, the ion incident angle ranging from 0° to 90°; and (c) forming an electrode unit to transmit electricity from the photoelectric transformation layer.

Abstract: A semiconductor device includes: a first semiconductor layer; a first electrode provided on a first surface side of the first semiconductor layer; a first insulating layer; and a second semiconductor layer. The first insulating layer is provided between the first semiconductor layer and the first electrode and configured to constrict current flowing between the first semiconductor layer and the first electrode. The second semiconductor layer has a first conductivity type and is provided at least on a path of the current constricted by the first insulating layer. The second semiconductor layer is in contact with the first electrode. The second semiconductor layer contains first impurities at a concentration higher than a concentration of impurities contained in the first semiconductor layer.

Abstract: A thin film photovoltaic cell (10) comprises an n-type semiconductor window layer (40), a p-type semiconductor absorption layer (5) and a pn-junction (6) at the interface between these two layers, wherein the p-type semiconductor absorption layer is formed of cadmium telluride CdTe. According to the present invention, the n-type semiconductor window layer (40) comprises zinc oxide/sulfide Zn (O,S).

Abstract: One aspect of the present invention includes method of making a photovoltaic device. The method includes disposing an absorber layer on a window layer, wherein the absorber layer includes a first region and a second region. The method includes disposing the first region adjacent to the window layer in a first environment including oxygen at a first partial pressure; and disposing the second region on the first region in a second environment including oxygen at a second partial pressure, wherein the first partial pressure is greater than the second partial pressure. One aspect of the present invention includes a photovoltaic device.

Abstract: A solar cell includes a substrate, a first electrode located over the substrate, where the first electrode comprises a first transition metal layer, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer. The first transition metal layer contains (i) an alkali element or an alkali compound and (ii) a lattice distortion element or a lattice distortion compound. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material.

Abstract: An electrochemical deposition method to form uniform and continuous Group IIIA material rich thin films with repeatability is provided. Such thin films are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the Group IIIA material rich thin film is deposited on an interlayer that includes 20-90 molar percent of at least one of In and Ga and at least 10 molar percent of an additive material including one of Cu, Se, Te, Ag and S. The thickness of the interlayer is adapted to be less than or equal to about 20% of the thickness of the Group IIIA material rich thin film.

Abstract: Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form.

Abstract: The invention relates to the production of a thin film having photovoltaic properties, containing a I-III-VI2-type alloy and deposited by electrolysis, including the following steps: (a) successive deposits of layers of metallic elements I and III; and (b) thermal post-treatment with the addition of element VI. In particular, step (a) comprises the following operations: (a1) depositing a multi-layer structure comprising at least two layers of element I and two layers of element III, deposited in an alternate manner, and (a2) annealing said structure before adding element VI in order to obtain a I-III alloy.

Abstract: A CIS solar cell having flexibility and high conversion efficiency may be produced, using, as a substrate, a polyimide film which is prepared from an aromatic tetracarboxylic acid component comprising 3,3?,4,4?-biphenyltetracarboxylic dianhydride as the main component and an aromatic diamine component comprising p-phenylenediamine as the main component, and has a maximum dimensional change in the temperature-increasing step of from 25° C. to 500° C. within a range of from +0.6% to +0.9%, excluding +0.6%, based on the dimension at 25° C. before heat treatment.

Abstract: A method of forming bit line aligned to a phase change material that includes forming a pedestal of a sacrificial material on a portion of a lower electrode and forming at least one dielectric material adjacent to the sacrificial material, wherein the at least one dielectric material has an upper surface substantially coplanar with an upper surface of the pedestal of the sacrificial material. The pedestal of the sacrificial material is removed selective to the at least one dielectric material and the lower electrode to provide an opening to an exposed surface of the lower electrode. A phase change material is formed on the exposed surface of the lower electrode, and the opening is filled with a conductive fill material. A self-aligned etch back process is also provided.

Abstract: A method of forming infra red detector arrays is described, starting with the manufacture of a wafer. The wafer is formed from a GaAs or GaAs/Si substrate having CMT deposited thereon by MOVPE. The CMT deposited can include a number of layers of differing composition, the composition being controlled during the MOVPE process and being dependent on the thickness of the layer deposited. A CdTe buffer layer can aid deposition of the CMT on the substrate. Once the wafer is formed, the buffer layer, an etch stop layer and any intervening layers can be etched away leaving a wafer suitable for further processing into an infra red detector.

Abstract: A multilayer structure to form absorber layers for solar cells. The multilayer structure includes a base comprising a contact layer on a substrate layer, a first layer on the contact layer, and a metallic layer on the first layer. The first layer includes an indium-gallium-selenide film and the gallium to indium molar ratio of the indium-gallium-selenide film is in the range of 0 to 0.8. The metallic layer includes gallium and indium without selenium. Additional selenium is deposited onto the metallic layer before annealing the structure for forming an absorber.

Abstract: Provided is a manufacturing method of a compound semiconductor solar cell. The method includes; preparing a substrate on which a back electrode is disposed, and sputtering a metal target to form a copper indium gallium selenium (CIGS) thin film on the back electrode under an indium (In) deposition gas atmosphere.

Abstract: The present invention relates to coated binary and ternary nanoparticle chalcogenide compositions that can be used as copper zinc tin chalcogenide precursor inks. In addition, this invention provides processes for manufacturing copper zinc tin chalcogenide thin films and photovoltaic cells incorporating such thin films.

Abstract: Methods for manufacturing a cadmium telluride based thin film photovoltaic device are generally disclosed. A resistive transparent layer can be sputtered on a transparent conductive oxide layer from a metal alloy target in a sputtering atmosphere of argon and oxygen that includes argon from about 5% to about 40%. A cadmium sulfide layer can then be formed on the resistive transparent layer. A cadmium telluride layer can be formed on the cadmium sulfide layer; and a back contact layer can be formed on the cadmium telluride layer. The sputtering can be accomplished within a sputtering chamber.

Abstract: A method for forming multiple layers in a single process chamber includes placing a substrate in the process chamber having multiple processing sources and iteratively forming a copper indium gallium selenium (CIGS) including forming multiple relatively thin CIGS layers including forming a copper indium gallium (CIG) layer on the substrate, the CIG layer having a thickness of between less than about 50 angstroms and about 200 angstroms, forming a selenium layer on the CIG layer, the selenium layer having a thickness of between less than about 50 angstroms and about 200 angstroms and heating the substrate, the CIG layer and the selenium layer. A processing chamber system is also disclosed.

Abstract: A radiation detector of this invention has a barrier layer on the upper surface of a high resistance film along the outer edge of a common electrode, which enables prevention of a chemical reaction between an amorphous semiconductor layer and a curable synthetic resin. The barrier layer is adhesive to the curable synthetic resin film, and this can prevent strength being insufficient, such that temperature changes cause separation in interfaces between the barrier layer and curable synthetic resin film, thereby reducing the effect of inhibiting warpage and cracking. The material for the barrier layer is an insulating material not including a substance that would chemically react with the amorphous semiconductor layer. This can prevent components of the material for the barrier layer from chemically reacting with the semiconductor layer. Consequently, creeping discharge at the outer edge of the common electrode where electric fields concentrate can be prevented.

Abstract: Provided are a solar cell apparatus and a method of manufacturing the same. The solar cell apparatus includes a substrate, a rear electrode layer disposed on the substrate, a thin film layer disposed on the rear electrode layer, the thin film layer including a Group VI-based element, a light absorption layer disposed on the thin film layer, and a front electrode layer on the light absorption layer.

Abstract: Methods for laser scribing a film stack including a plurality of thin film layers on a substrate are provided. A pulse of a laser beam is applied to the film stack, where the laser beam has a power that varies as a function of time during the pulse according to a predetermined power cycle. For example, the pulse can have a pulse lasting about 0.1 nanoseconds to about 500 nanoseconds. This pulse of the laser beam can be repeated across the film stack to form a scribe line through at least one of the thin film layers on the substrate. Such methods are particularly useful in laser scribing a cadmium telluride thin-film based photovoltaic device.

Abstract: A wafer-scale x-ray detector and a method of manufacturing the same are provided. The wafer-scale x-ray detector includes: a seamless silicon substrate electrically connected to a printed circuit substrate; a chip array having a plurality of pixel pads formed on a central region thereof and a plurality of pin pads formed at edges thereof on the seamless silicon substrate; a plurality of pixel electrodes formed to correspond to the pixel pads; vertical wirings and horizontal wirings formed to compensate a difference of regions expanded towards the pixel electrodes from the pixel pads between the chip array and the pixel electrodes; a redistribution layer having an insulating layer to separate the vertical wirings and the horizontal wirings; and a photoconductor layer and a common electrode which cover the pixel electrodes on the redistribution layer.

Abstract: Thin film photovoltaic devices are provided that generally include a transparent conductive oxide layer on the glass, a multi-layer n-type stack on the transparent conductive oxide layer, and a cadmium telluride layer on the multi-layer n-type stack. The multi-layer n-type stack generally includes a first layer and a second layer, where the first layer comprises cadmium and sulfur and the second layer comprises cadmium and oxygen. The multi-layer n-type stack can, in certain embodiments, include additional layers (e.g., a third layer, a fourth layer, etc.). Methods are also generally provided for manufacturing such thin film photovoltaic devices.

Abstract: Disclosed is a light emitting device having an isolating insulative layer for isolating light emitting cells from one another and a method of fabricating the same. The light emitting device comprises a substrate and a plurality of light emitting cells formed on the substrate. Each of the light emitting cells includes a lower semiconductor layer, an upper semiconductor layer positioned on one region of the lower semiconductor layer, and an active layer interposed between the lower and upper semiconductor layers. Furthermore, an isolating insulative layer is filled in regions between the plurality of light emitting cells to isolate the light emitting cells from one another. Further, wirings electrically connect the light emitting cells with one another. Each of the wirings connects the lower semiconductor layer of one light emitting cell and the upper semiconductor layer of another light emitting cell adjacent to the one light emitting cell.

Abstract: Methods for protecting a cadmium sulfide layer on a substrate are provided. The method can include sputtering a cadmium sulfide layer onto a substrate from a cadmium sulfide target at a sputtering pressure (e.g., about 10 mTorr to about 150 mTorr), and sputtering a cap layer directly on the cadmium sulfide layer. The cap layer can be sputtered directly onto the cadmium sulfide layer without breaking vacuum of the sputtering pressure. Methods are also provided for manufacturing a cadmium telluride based thin film photovoltaic device through depositing a cadmium sulfide layer on a substrate, depositing a cap layer directly on the cadmium sulfide layer, heating the substrate to sublimate at least a portion of the cap layer from the cadmium sulfide layer, and then depositing a cadmium telluride layer on the cadmium sulfide layer. An intermediate substrate for forming a cadmium telluride based thin-film photovoltaic device is also provided.

Abstract: A Cu-In-Zn-Sn-(Se,S)-based thin film for a solar cell and a preparation method thereof, and more particularly, to a Cu-In-Zn-Sn-(Se,S)-based thin film for a solar cell which can reduce an amount of In to be used and exhibit an excellent conversion efficiency and a preparation method thereof.