Abstract: A sputtering target includes at least one metal selected from copper, indium and gallium and a sodium containing compound.

Abstract: Provided is a manufacturing method of a compound semiconductor solar cell. The method includes; preparing a substrate on which a back electrode is disposed, and sputtering a metal target to form a copper indium gallium selenium (CIGS) thin film on the back electrode under an indium (In) deposition gas atmosphere.

Abstract: Processes for making a solar cell by depositing various layers of components on a substrate and converting the components into a thin film photovoltaic absorber material. Processes of this disclosure can be used to control the stoichiometry of metal atoms in making a solar cell for targeting a particular concentration and providing a gradient of metal atom concentration. A selenium layer can be used in annealing a thin film photovoltaic absorber material.

Abstract: A process described herein provides an economical means for producing the oxide-based buffer layers using a wet chemical CSD process wherein the desired buffer layer material results from the evaporation of a chemical already containing the material in solution. Thus, no residual liquid chemical elements remain after deposition, and as there is no reaction to create the buffer material, as is the case with CdS CBD, the liquid elements in CSD have sufficiently long shelf life after mixing to as to improve manufacturability and further reduce waste. Furthermore, as there is no in-chamber reaction to create the buffer material solution, there are many options for delivering said solution to the CIGS absorber layer. Finally, as the oxide films for the CdS replacement have inherently better transmission in the blue spectrum, aggressive thinning of films to improve current generation is unnecessary.

Abstract: Scribing and deposition processes can be used to interconnect cells within photovoltaic modules.

Abstract: Described are embodiments of methods for depositing a copper indium gallium diselenide (CIGS) film on a substrate, such as a web substrate or a discrete substrate. In various embodiments, an incremental layer of indium is deposited followed by deposition of a top incremental layer of copper gallium to create a multi-layer structure that is subsequently selenized. By capping the multi-layer structure with the copper gallium layer, the depletion of indium during the selenization of the multi-layer is reduced or eliminated. Additional multi-layers, each having a copper gallium cap layer, are formed and selenized to create the CIGS film. Optionally, the indium content and gallium content in each multi-layer are varied from the indium content and gallium content of one or more of the other multi-layers to achieve desired content gradients in the CIGS film.

Abstract: Described are a system and a method for depositing a thin film on a substrate. In some embodiments, the system includes a substrate transport system to transport a plurality of discrete substrates, such as glass substrates or wafers, along a closed path. The system also includes a metal deposition zone, a selenization zone and a cooling chamber each disposed on the closed path. During transport along the closed path, the metal deposition zone deposits a layer of a composite metal onto the discrete substrates and the selenization zone selenizes the layer of the composite metal. The cooling zone cools the discrete substrates prior to a subsequent pass through the metal deposition zone and the selenization zone.

Abstract: A vapor distributor assembly may include a carbon fiber heating element.

Abstract: A selenium deposition system can improve the selenium vapor distribution.

Abstract: A solar cell includes a substrate, a first electrode located over the substrate, where the first electrode comprises a first transition metal layer, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer. The first transition metal layer contains (i) an alkali element or an alkali compound and (ii) a lattice distortion element or a lattice distortion compound. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material.

Abstract: The construction of this invention includes an active matrix substrate, an amorphous selenium layer, a high resistance layer, a gold electrode layer, an insulating layer and an auxiliary plate laminated in this order. In one aspect of the present invention, the insulating layer has an inorganic anion exchanger added thereto in order to provide a radiation detector which prevents void formation and pinhole formation in the amorphous semiconductor layer and carrier selective high resistance film, without accumulating electric charges on the auxiliary plate. The inorganic anion exchanger adsorbs chloride ions in the insulating layer, thereby preventing destruction of X-ray detector due to the chloride ions drawn to the gold electrode layer.

Abstract: A method of manufacturing a solar cell is presented. The manufacturing method of a solar cell may include: forming a first electrode on a substrate; forming a precursor that includes copper, gallium, and indium on a first electrode, forming a preliminary light absorption layer by providing selenium Se to the precursor, forming a light absorption layer by providing a compound including at least one of gallium and indium to the preliminary light absorption layer, and forming a second electrode on the light absorption layer.

Abstract: This invention relates to processes for making kesterite compositions with atypical Cu:Zn:Sn:S ratios and/or kesterite compositions with unusually small coherent domain sizes. This invention also relates to these kesterite compositions and their use in preparing CZTS films.

Abstract: Methods for protecting a cadmium sulfide layer on a substrate are provided. The method can include sputtering a cadmium sulfide layer onto a substrate from a cadmium sulfide target at a sputtering pressure (e.g., about 10 mTorr to about 150 mTorr), and sputtering a cap layer directly on the cadmium sulfide layer. The cap layer can be sputtered directly onto the cadmium sulfide layer without breaking vacuum of the sputtering pressure. Methods are also provided for manufacturing a cadmium telluride based thin film photovoltaic device through depositing a cadmium sulfide layer on a substrate, depositing a cap layer directly on the cadmium sulfide layer, heating the substrate to sublimate at least a portion of the cap layer from the cadmium sulfide layer, and then depositing a cadmium telluride layer on the cadmium sulfide layer. An intermediate substrate for forming a cadmium telluride based thin-film photovoltaic device is also provided.

Abstract: A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(InXGa1-X)Se2) absorber layer (X ranging from 1 to approximately 0.7) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology. The band gap of the absorber layer can be graded by varying the gallium content, and by replacing the gallium partially or totally with aluminum. Alternately the absorber layer is reactively sputtered from metal alloy targets in the presence of hydrogen selenide gas. RF sputtering is used to deposit a non-cadmium containing window layer of ZnS. The top transparent electrode is reactively sputtered aluminum doped ZnO. A unique modular vacuum roll-to-roll sputtering machine is described.

Abstract: Methods of making a photovoltaic (PV) cell are disclosed. The methods comprise at least the steps of, providing a first component comprising a cadmium telluride (CdTe) layer comprising an interfacial region, and subjecting the first component to a functionalizing treatment in the presence of a material comprising copper.

Abstract: The present invention is a method for scribing a thin film solar cell that includes a soda lime glass substrate, a film of molybdenum (Mo), a film of copper indium gallium diselenide (GIGS), a buffering layer, a layer of zinc oxide (i-ZnO), a layer of aluminum doped zinc oxide (n-ZnO:Al or AZO), a first scribe, a conductive link and a second scribe. The method steps include producing the first scribe on the Mo film, depositing the CICS film, the buffering layer and the zinc oxide layer onto the Mo film, producing the second scribe on the CICS film, the zinc oxide layer and the buffering layer above the Mo film, depositing and filling a first insulating material into the first scribe. and depositing a second insulating material that covers the solar cell while filling the first scribe forming a conduction layer.

Abstract: Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 50° C. to about 250° C., and annealing the transparent conductive oxide layer at an anneal temperature of about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.

Abstract: Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate from a target (e.g., including cadmium stannate) in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.

Abstract: Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (e.g., including cadmium stannate) on a substrate from a target in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature greater of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.

Abstract: A resistance variable memory cell and method of forming the same. The memory cell includes a first electrode and at least one layer of resistance variable material in contact with the first electrode. A first, second electrode is in contact with a first portion of the at least one layer of resistance variable material and a second, second electrode is in contact with a second portion of the at least one layer of resistance variable material.

Abstract: A method for manufacturing a photoelectric conversion element including a step of preparing a substrate and a step of forming a photoelectric conversion layer made of a CIGS-based semiconductor compound on the substrate. The step of forming the photoelectric conversion layer includes exposing the substrate to vapors of (In, Ga) and Se, or a vapor of (In, Ga)ySez, and is achieved in less than 40 minutes, and the step of exposing the substrate to vapors of (In, Ga) and Se, or vapor of (In, Ga)ySez includes varying the Ga/(In+Ga) ratio over time.

Abstract: Solar photovoltaic (PV) devices, e.g., those based on the Copper Indium Selenide (CIS) family of absorbers, including CuIn(1-x)Ga(x)Se2 (CIGS) absorber thin-film PV devices, are provided. Embodiments provide PV devices comprising an alkali metal-containing polymeric film (ACPF), which is a film formed from a composite comprising an alkali metal-containing material and a polymer. Embodiments of this disclosure also provide PV devices comprising a thermally stable polymer film that does not contain an alkali metal (TSP). Included within the embodiments of this disclosure are flexible PV devices comprising a flexible base substrate onto which one or more ACPFs and/or TSPs is/are provided, as well as flexible PV devices wherein an ACPF or TSP itself constitutes the base substrate in the form of a stand alone film. Processes for making such flexible PV devices include roll-to-roll processes.

Abstract: A method of manufacture of cadmium mercury telluride (CMT) is disclosed. The method involves growing one or more buffer layers on a substrate by molecular beam epitaxy (MBE). Subsequently at least one layer of cadmium mercury telluride, Hg1-xCdxTe where x is between 0 and 1 inclusive, is grown by metal organic vapour phase epitaxy (MOVPE). The use of MBE to grow buffer layers allows a range of substrates to be used for CMT growth. The MBE buffer layers provide the correct orientation for later MOVPE growth of CMT and also prevent chemical contamination of the CMT and attack of the substrate during MOVPE. The method also allows for device processing of the CMT layers to be performed with further MOVPE growth of crystalline CMT layers and/or passivation layers. The invention also relates to new devices formed by the method.

Abstract: Disclosed is a method of manufacturing a thin-film light-absorbing layer using spraying, including mixing precursor solutions comprising CuCl2, InCl3 and SeC(NH2)2 under a nitrogen atmosphere at room temperature thus preparing a mixture solution; spraying the mixture solution on a substrate and drying it, thus forming a thin film; and selenizing the thin film under a selenium atmosphere. A method of manufacturing a thin-film solar cell is also provided, which includes forming a back contact layer on a glass substrate using sputtering; forming a light-absorbing layer on the back contact layer using spraying; forming a buffer layer on the light-absorbing layer using chemical vapor deposition; forming a window layer on the buffer layer using sputtering; and forming an upper electrode layer on the window layer.

Abstract: An absorber layer may be formed on a substrate using atomic layer deposition reactions. An absorber layer containing elements of groups IB, IIIA and VIB may be formed by placing a substrate in a treatment chamber and performing atomic layer deposition of a group IB element and/or one or more group IIIA elements from separate sources onto a substrate to form a film. A group VIA element is then incorporated into the film and annealed to form the absorber layer. The absorber layer may be greater than about 25 nm thick. The substrate may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The coiled substrate may be placed in a treatment chamber where substantially an entire surface of the one or more coiled substrates may be treated by an atomic layer deposition process.

Abstract: An X-ray detector 1 includes: an X-ray conversion layer 17 which is made of amorphous selenium and absorbs incident radiation and generates charges; a common electrode 23 provided on a surface on the side on which radiation is made incident of the X-ray conversion layer 17; and a signal readout substrate 2 on which a plurality of pixel electrodes 7 for collecting charges generated by the X-ray conversion layer 17 are arrayed, and further includes: an electric field relaxation layer 13 provided between the X-ray conversion layer 17 and the signal readout substrate 2 and containing arsenic and lithium fluoride; a crystallization suppressing layer 11 provided between the electric field relaxation layer 13 and the signal readout substrate 2 and containing arsenic; and a first thermal property enhancement layer 15 provided between the electric field relaxation layer 13 and the X-ray conversion layer 17 and containing arsenic.

Abstract: A radiation detector of this invention has a curable synthetic resin film covering exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a common electrode, in which a material allowing no chloride to mix in is used in a manufacturing process of the curable synthetic resin film. This prevents pinholes and voids from being formed by chlorine ions in the carrier selective high resistance film and semiconductor layer. Also a protective film which does not transmit ionic materials may be provided between the exposed surface of the common electrode and the curable synthetic resin film, thereby to prevent the carrier selective high resistance film from being corroded by chlorine ions included in the curable synthetic resin film, and to prevent an increase of dark current flowing through the semiconductor layer.

Abstract: A method for manufacturing a photovoltaic device may include depositing a semiconductor absorber layer on a substrate, depositing a molybdenum in the presence of a nitrogen to form a molybdenum nitride in contact with the semiconductor absorber layer, and doping the molybdenum nitride with a copper dopant.

Abstract: A photovoltaic module may include a substrate including a coating; and an interlayer placed in contact with the substrate, where the interlayer includes an acid-modified polyethylene.

Abstract: A process for making a component of a thin film solar cell is provided. The process includes steps of making the component in the following sequence: depositing an absorber layer on a transparent substrate, depositing a back-contact layer on the absorber layer and activating the absorber layer. The absorber layer comprises tellurium. A process for making a thin film solar cell is also presented.

Abstract: A photovoltaic cell comprises a first subcell formed of a Group IV semiconductor material, a second subcell formed of a Group II-VI semiconductor material, and a tunnel heterojunction interposed between the first and second subcells. A first side of the tunnel heterojunction is formed by a first layer that is adjacent to a top surface of the first subcell. The first layer is of a first conductivity type, is comprised of a highly doped Group IV semiconductor material. The other side of the tunnel heterojunction is formed by a second layer that adjoins the lower surface of the second subcell. The second layer is of a second conductivity type opposite the first conductivity type, and is comprised of a highly doped Group II-VI semiconductor material. The tunnel heterojunction permits photoelectric series current to flow through the subcells.

Abstract: Methods of depositing a transparent conductive oxide layer on a substrate are generally disclosed. A shield of greater than about 75% by weight molybdenum can be attached to a first surface of a substrate such that the shield contacts at least about 75% of the first surface. The shield can then be heated via an energy source to cause thermal exchange from the shield to the substrate to heat the substrate to a sputtering temperature. A transparent conductive oxide layer can then be sputtered on a second surface of the substrate at the sputtering temperature. Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device.

Abstract: The present invention relates to a photodetector using nanoparticles, and more particularly, to a novel photodetector wherein surfaces of nanoparticles synthesized by a wet colloidal process are capped with organic materials which then serve as channels for electron migration, or nanoparticles, from which organic materials capped on the surfaces of nanoparticles are removed to form a close-packed particle structure, directly serve to transport electrons. In accordance with specific embodiments of the present invention, it is possible to improve performance of the photodetector and simplify the manufacturing process thereof.

Abstract: A layer of an n-type chalcogenide compositions provided on a substrate in the presence of an oxidizing gas in an amount sufficient to provide a resistivity to the layer that is less than the resistivity a layer deposited under identical conditions but in the substantial absence of oxygen.

Abstract: A process for forming a cadmium-free thin film includes the steps of forming a first liquid precursor, forming a second liquid precursor, mixing the first and second liquid precursors in a vessel to form a coating material having no cadmium present, and dispensing the coating material from the vessel to a substrate to form the cadmium-free thin film.

Abstract: A radiation detector of this invention has an insulating, non-amine barrier layer disposed between exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a common electrode, and a curable synthetic resin film. This barrier layer can further inhibit a chemical reaction between the semiconductor layer and curable synthetic resin film, and can prevent an increase in dark current which flows through the semiconductor layer. Since no chemical reaction occurs between the barrier layer and semiconductor layer, the semiconductor layer will never be degraded. Further, with an auxiliary plate disposed on an upper surface of the curable synthetic resin film, it is possible to manufacture a radiation detector free from warpage and cracking due to temperature change.

Abstract: A method of manufacturing partially light transparent thin film solar cells generally includes forming a solar cell structure stack and forming multiple openings through the solar cell structure stack. The solar cell structure stack includes a flexible foil substrate, a contact layer formed over the flexible foil substrate, a Group IBIIIAVIA absorber layer formed over the contact layer and a transparent conductive layer formed over the Group IBIIIAVIA absorber layer. A terminal structure including at least one busbar and a plurality of conductive finger patterns is deposited onto a top surface of the transparent conductive layer forming a semi-transparent solar cell.

Abstract: A phase change memory structure and method for forming the same, the method including providing a substrate comprising a conductive area; forming a spacer having a partially exposed sidewall region at an upper portion of the spacer defining a phase change memory element contact area; and, wherein the spacer bottom portion partially overlaps the conductive area. Both these two methods can reduce active area of a phase change memory element, therefore, reducing a required phase changing electrical current.

Abstract: A method for fabricating a copper-indium-gallium-diselenide (CIGS) compound thin film is provided. In this method, a substrate is first provided. An adhesive layer is formed over the substrate. A metal electrode layer is formed over the adhesive layer. A precursor stacked layer is formed over the metal electrode layer, wherein the precursor stacked layer includes a plurality of copper-gallium (CuGa) alloy layers and at least one copper-indium (CuIn) alloy layer sandwiched between the plurality of CuGa alloy layers. An annealing process is performed to convert the precursor stacked layer into a copper-indium-gallium (CuInGa) alloy layer. A selenization process is performed to convert the CuInGa alloy layer into a copper-indium-gallium-diselenide (CuInGaSe) compound thin film.

Abstract: A process for preparing a solar cell comprising a support, a layer of cadmium sulfide (CdS), a layer of cadmium telluride (CdTe), a layer of a transparent conductive oxide (TCO), a conductive metallic layer and optionally a layer of buffer material, the CdS layer and the CdTe layer being deposited by means of a pulsed plasma deposition (PPD) method, a solar cell obtainable by means of the described process being also provided.

Abstract: The present invention generally provides a method for forming a photovoltaic device including evaporating a source material to form a large molecule processing gas and flowing the large molecule processing gas through a gas distribution showerhead and into a processing area of a processing chamber having a substrate therein. The method includes generating a small molecule processing gas, and reacting the small molecule processing gas with a film already deposited on a substrate surface to form a semiconductor film. Additionally, apparatuses that may use the methods are also provided to enable continuous inline CIGS type solar cell formation.

Abstract: The present invention relates to a method for producing a chalcopyrite-type solar cell. The chalcopyrite-type solar cell has a light absorbing layer formed by selenizing a Cu—In—Ga alloy layer. The alloy layer is formed on a first electrode layer by sputtering using only a Cu—In—Ga alloy target (CIG target).

Abstract: A monolithically integrated cadmium telluride (CdTe) photovoltaic (PV) module includes a first electrically conductive layer and an insulating layer. The first electrically conductive layer is disposed below the insulating layer. The PV module further includes a back contact metal layer and a CdTe absorber layer. The back contact metal layer is disposed between the insulating layer and the CdTe absorber layer. The PV module further includes a window layer and a second electrically conductive layer. The window layer is disposed between the CdTe absorber layer and the second electrically conductive layer. At least one first trench extends through the back contact metal layer, at least one second trench extends through the absorber and window layers, and at least one third trench extends through the second electrically conductive layer. A method for monolithically integrating CdTe PV cells is also provided.

Abstract: A solar cell includes a first electrode located over a substrate, at least one p-type semiconductor absorber layer located over the first electrode, the p-type semiconductor absorber layer comprising a copper indium selenide (CIS) based alloy material, an n-type semiconductor layer located over the p-type semiconductor absorber layer, an insulating aluminum zinc oxide layer located over the n-type semiconductor layer, the insulating aluminum zinc oxide having an aluminum content of 100 ppm to 5000 ppm and a second electrode over the insulating aluminum layer, the second electrode being transparent and electrically conductive. The insulating aluminum zinc oxide having an aluminum content of 100 ppm to 5000 ppm, may be deposited by pulsed DC, non-pulsed DC, or AC sputtering from an aluminum doped zinc oxide having an aluminum content of 100 ppm to 5000 ppm.

Abstract: The present invention advantageously provides for, in different embodiments, improved contact layers or nucleation layers over which precursors and Group IBIIIAVIA compound thin films adhere well and form high quality layers with excellent micro-scale compositional uniformity. It also provides methods to form precursor stack layers, by wet deposition techniques such as electroplating, with large degree of freedom in terms of deposition sequence of different layers forming the stack.

Abstract: An apparatus comprising a substrate, an electrode coupled to the substrate, a modifiable layer coupled to the electrode, and a current focusing layer coupled to the modifiable layer. The current focusing layer comprises a conductive region and an insulating region. A method comprising forming a modifiable layer on an electrode and forming a current focusing layer on the modifiable layer.

Abstract: A resistance variable memory cell and method of forming the same. The memory cell includes a first electrode and at least one layer of resistance variable material in contact with the first electrode. A first, second electrode is in contact with a first portion of the at least one layer of resistance variable material and a second, second electrode is in contact with a second portion of the at least one layer of resistance variable material.

Abstract: A copper indium gallium selenide photovoltaic cell can include a substrate having a transparent conductive oxide layer. The copper indium gallium selenide can be deposited using sputtering and vapor transport deposition.

Abstract: A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-rich chalcogenides is disclosed. The method comprises forming a precursor material comprising group IB-chalcogenide and/or group IIIA-chalcogenide particles, wherein an overall amount of chalcogen in the particles relative to an overall amount of chalcogen in a group IB-IIIA-chalcogenide film created from the precursor material, is at a ratio that provides an excess amount of chalcogen in the precursor material. The excess amount of chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form the group IB-IIIA-chalcogenide film at a desired stoichiometric ratio, wherein the excess amount of chalcogen in the precursor material is an amount greater than or equal to a stoichiometric amount found in the IB-IIIA-chalcogenide film.