Abstract: Aspects of the present disclosure relate to a photon counting detector and to a read-out integrated circuit to be used in such detector. Aspects of the present disclosure particularly relate to X-ray applications. According to an aspect of the present disclosure, the detector comprises an electrical ground plane arranged at or near an interface between the carrier and at least one ROIC die. Each ROIC die comprises an extension region that laterally extends beyond the photon conversion assembly, wherein peripheral circuitry for a given ROIC die is arranged in the extension region of that ROIC die. The detector comprises at least one electrical connection that connects the power supply line that is arranged on the carrier to the peripheral circuitry of the at least one ROIC die.

Abstract: Some embodiments include an x-ray system, comprising: an x-ray imager including a plurality of imaging layers; an x-ray source configured to generate an x-ray beam; and an x-ray prefilter; wherein: the x-ray prefilter is configured to adjust an energy spectrum of the x-ray beam to create or decrease a level of x-ray fluence of a local minimum between two of a plurality of local maximums.

Abstract: A sensor includes a first electrode, a second electrode facing the first electrode, and a light absorbing layer between the first electrode and the second electrode. The light absorbing layer may have a first absorption spectrum having a first absorption peak in a first infrared wavelength region and a second absorption peak in a second infrared wavelength region, the second infrared wavelength region being a longer wavelength region than the first infrared wavelength region. The second absorption spectrum does not at least partially overlap with the first absorption spectrum. The second absorption spectrum may have a lower absorption intensity than the first absorption spectrum. An external quantum efficiency (EQE) spectrum that is amplified in the second infrared wavelength region is exhibited in the sensor.

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

Abstract: In an apparatus for manufacturing a dye-sensitized solar cell, a photosensitization dye solution makes contact with an electrode material layer that functions as a working electrode of a dye-sensitized solar cell so that the photosensitizing dye is adsorbed on the layer. Such an apparatus for manufacturing a dye-sensitized solar cell has a substrate housing section to house a substrate with the electrode material layer formed on its surface, and a circulation mechanism to circulate the photosensitization dye solution in such a way that the solution passes a surface of the substrate housed in the substrate housing section. In such an apparatus, a cross-sectional area of a flow path for the photosensitization dye solution in a portion facing the substrate in the substrate housing section is set smaller than a cross-sectional area of a flow path for the photosensitization dye solution in other portions.

Abstract: A radiation converter includes a directly converting semiconductor layer having grains whose interfaces predominantly run parallel to a drift direction—constrained by an electric field—of electrons liberated in the semiconductor layer. Charge carriers liberated by incident radiation quanta are accelerated in the electric field in the direction of the radiation incidence direction and on account of the columnar or pillar-like texture of the semiconductor layer, in comparison with the known radiation detectors, cross significantly fewer interfaces of the grains that are occupied by defect sites. This increases the charge carrier lifetime/mobility product in the direction of charge carrier transport. Consequently, it is possible to realize significantly thicker semiconductor layers for the counting and/or energy-selective detection of radiation quanta. This increases the absorptivity of the radiation converter which in turn makes it possible to reduce a radiation dose applied to the patient.

Abstract: A method for forming a nanostructure according to one embodiment includes creating a hole in an insulating layer positioned over an electrically conductive layer; and forming a nanocable in the hole such that the nanocable extends through the hole in the insulating layer and protrudes therefrom, the nanocable being in communication with the electrically conductive layer. Additional systems and methods are also presented.

Abstract: The optical semiconductor of the present invention is an optical semiconductor containing In, Ga, Zn, O and N, and has a composition in which a part of oxygen (O) is substituted by nitrogen (N) in a general formula: In2xGa2(1-x)O3(ZnO)y, where x and y satisfy 0.2<x<1 and 0.5?y. In the general formula, x is preferably 0.5, and furthermore, y is preferably 1 or more and 6 or less, and more preferably 2 or 6. It is preferred that the optical semiconductor of the present invention have a wurtzite crystal structure. The optical semiconductor of the present invention is an excellent optical semiconductor because it has a smaller band gap, can utilize visible light, and has high carrier mobility and thus has high quantum efficiency.

Abstract: A photo diode includes an intrinsic region on a substrate, a P+ doping region in a first portion of the intrinsic region, and an oxide semiconductor region. The oxide semiconductor region is spaced apart from the P+ doping region on a second portion of the intrinsic region and the second portion of the intrinsic region is different from the first portion of the intrinsic region.

Abstract: Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.

Abstract: In the present invention, copper(I) selenide (Cu2-xSe) nanoparticles are fabricated by pyrolysis in an inert atmosphere. Uniformly dispersed Cu2-xSe particles are synthesized by altering Cu/Se ratio, the concentration of Se Precursors (TOP Se), reaction time and temperature. Analysis by inductively coupled plasma atomic emission spectroscopy (ICP-AES) of said Cu2-xSe nanoparticles reveals that the composition of the nanoparticles is Cu 1.95Se, wherein x=0.05. In addition, Cu2-xSe is dissolved in ethanol to deposit thin films by electrophoretical deposition (EPD) in an inert atmosphere, wherein a positive electrode and a negative electrode are employed. The positive electrode is made of stainless steel plate and the negative electrode is made of indium tin oxide on a glass substrate. Investigations on properties and surface morphology thereof in different electrophoretical conditions are carried out. The rate of EPD is found to significantly influence the quality of thin films.

Abstract: A thin-film photovoltaic device and a process of making such a device, the device comprising a first layer of a chalkopyrite semiconductor of a first doping type; a second layer of intrinsic zinc oxide deposited by chemical vapor deposition; a third layer of zinc oxide semiconductor of a second doping type opposite to the first doping type and deposited by a method other than chemical vapor deposition; and wherein the second layer is arranged between the first and third layers.

Abstract: Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

Abstract: An electro-optical device can include a plurality of nanocrystals positioned between a first electrode and a second electrode. The nanocrystal and at least one electrode can have a band gap offset sufficient to inject a charge carrier from the first electrode or second electrode into the nanocrystal. The device can be a secondary photoconductor.

Abstract: A photovoltaic device is presented. The device includes a first semiconductor layer disposed on a second semiconductor layer. The first semiconductor layer includes a compound having a metal species, sulfur, and oxygen. The metal species may include zinc, magnesium, tin, indium, or a combination thereof. Method for making a photovoltaic device is also presented.

Abstract: A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25?0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results in high efficiency.

Abstract: A radiation detector made of High Purity Germanium (HPGe) has been specially machined to be this invented multilayer Inter-Coaxial configuration. With this special configuration, extra large volume HPGe detectors of diameters to be 6 inches, 9 inches, and even 12 inches, can be produced with current achievable HPGe crystal purity and quality, in which the entire detector crystal will be depleted and properly over biased for effective photo-induced signal collection with just less than 5000V bias applied. This invention makes extra large efficiency of 200%, 300%, and maybe even higher than 500% possible with HPGe gamma ray detectors with reasonable great resolution performances procurable based on current HPGe crystal supply capability. The invention could also be applied to any other kind of semiconductor materials if any of them could be purified enough for this application in the future.

Abstract: The present invention provides a reaction chamber to monitor a metal ion in solution during the formation of a metal-sulfide layer on a substrate. The reaction chamber houses a solution of an ammonium ion, a metal ion and a buffer. The reaction chamber includes an anion-selective electrode in the solution to monitor the metal ion that measures the metal ion during metal-ammonium complex formation, metal-thiourea complex formation, metal sulfide composition formation, metal sulfide layer formation or a combination thereof.

Abstract: In one embodiment, a method includes depositing a precursor material outwardly from a substrate, introducing a source-material into proximity with the precursor material, depositing a dopant, and annealing the precursor layer in proximity with of the source-material layer. The precursor material may include Cu, Zn, and Sn, and one or more of S or Se. The source material may include Sn and one or more of S or Se. The dopant may be deposited in sufficient proximity to the precursor material such that the average grain size of the precursor material is increased by the presence of the dopant and is greater than 200 nm. The annealing of the precursor material may be performed in a constrained volume.

Abstract: A thin-film photovoltaic solar cell device is disclosed. A transparent conductive oxide (TCO) layer is disposed on a substrate as a front contact. A window layer is disposed on the TCO layer. A metal oxide layer is disposed on the window layer. An absorber layer is disposed on the metal oxide layer. A back contact layer is disposed on the absorber layer. In one embodiment, the device includes a high resistance barrier (HRT) layer interposed between the window layer and the TCO layer.

Abstract: Provided is a method of manufacturing a solar cell module The method includes: forming a bottom electrode layer on a substrate; forming a light absorbing layer on the bottom electrode layer and the substrate; forming a first trench that exposes the bottom electrode layer by patterning the light absorbing layer; and forming a window electrode layer that extends from the top of the light absorbing layer to the bottom of the bottom of the first trench, wherein the window electrode layer is formed through an ionized physical vapor deposition method.

Abstract: A Kesterite film is vacuum deposited and annealed on a substrate. Deposition is conducted at low temperature to provide good composition control and efficient use of metals. Annealing is conducted at a high temperature for a short period of time. Thermal evaporation, E-beam evaporation or sputtering in a high vacuum environment may be employed as part of a deposition process.

Abstract: In one aspect of the present invention, a method is included. The method includes thermally processing an assembly to form at least one transparent layer. The assembly includes a first panel including a first layer disposed on a first support and a second panel including a second layer disposed on a second support, wherein the second panel faces the first panel, and wherein the first layer and the second layer include substantially amorphous cadmium tin oxide. Method of making a photovoltaic device is also included.

Abstract: A photovoltaic device including a CZTS absorber layer and method for manufacturing the same are disclosed. The photovoltaic device includes a substrate, a bottom electrode, an absorber layer formed on the bottom electrode, a buffer layer formed on the absorber layer and a top electrode layer formed on the buffer layer. The absorber layer includes a first region adjacent to the bottom electrode and a second region adjacent to the first region. Both of the first region and the second region include a formula of Cua(Zn1-bSnb)(Se1-cSc)2, wherein 0<a<1, 0<b<1, 0?c?1 and a Zn/Sn ratio of the first region is higher than that of the second region.

Abstract: Methods for developing and investigating materials and processes for various layers used in manufacturing CdTe, CIGS, and CZTS TFPV superstrate devices using high productivity combinatorial techniques is described. Typical layers subjected to the HPC techniques include the buffer layers, absorber layers, and the contact interface layers.

Abstract: An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.

Abstract: One embodiment in accordance with the invention is a solar cell comprising a non-single crystal substrate; a nanowire grown from a surface of the non-single crystal substrate; and an electrode coupled to the nanowire, wherein the nanowire is electrically conductive and is for absorbing electromagnetic wave and generating a current.

Abstract: A diode type ultraviolet sensor having a layered-structure body including a conductive layer composed of a sintered ceramic body having conductivity and a semiconductor layer composed of an oxide semiconductor including ZnO. The semiconductor layer is disposed on a principal surface of the conductive layer and forms a heterojunction with the conductive layer. The ultraviolet sensor is used in such a condition that the semiconductor layer is positioned at a light-receiving side irradiated by ultraviolet rays. The semiconductor layer is preferably composed of a sintered body. The sintered body serving as the conductive layer and sintered body serving as the semiconductor layer are preferably formed by co-firing. Terminal electrodes are provided on a principal surface and the other principal surface of the layered-structure body, respectively.

Abstract: In an apparatus for manufacturing a dye-sensitized solar cell, a photosensitization dye solution makes contact with an electrode material layer that functions as a working electrode of a dye-sensitized solar cell so that the photosensitizing dye is adsorbed on the layer. Such an apparatus for manufacturing a dye-sensitized solar cell has a substrate housing section to house a substrate with the electrode material layer formed on its surface, and a circulation mechanism to circulate the photosensitization dye solution in such a way that the solution passes a surface of the substrate housed in the substrate housing section. In such an apparatus, a cross-sectional area of a flow path for the photosensitization dye solution in a portion facing the substrate in the substrate housing section is set smaller than a cross-sectional area of a flow path for the photosensitization dye solution in other portions.

Abstract: A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.

Abstract: Thin film photovoltaic devices including a thin film stabilization layer between the photovoltaic heterojunction and a back contact are provided. The thin film stabilization layer generally includes cadmium sulfide, but may also include copper and/or other materials. Methods are also provided for forming a thin film photovoltaic device via forming a thin film stabilization layer on a photovoltaic heterojunction (that generally overlies a transparent conductive oxide layer on a transparent substrate) and forming a back contact on the thin film stabilization layer.

Abstract: A thin film photovoltaic cell (10) comprises an n-type semiconductor window layer (40), a p-type semiconductor absorption layer (5) and a pn-junction (6) at the interface between these two layers, wherein the p-type semiconductor absorption layer is formed of cadmium telluride CdTe. According to the present invention, the n-type semiconductor window layer (40) comprises zinc oxide/sulfide Zn (O,S).

Abstract: A diode type ultraviolet sensor having a layered-structure body including a conductive layer composed of a sintered ceramic body having conductivity and a semiconductor layer composed of an oxide semiconductor including ZnO. The semiconductor layer is disposed on a principal surface of the conductive layer and forms a heterojunction with the conductive layer. The ultraviolet sensor is used in such a condition that the semiconductor layer is positioned at a light-receiving side irradiated by ultraviolet rays. The semiconductor layer is preferably composed of a sintered body. The sintered body serving as the conductive layer and sintered body serving as the semiconductor layer are preferably formed by co-firing. Terminal electrodes are provided on a principal surface and the other principal surface of the layered-structure body, respectively.

Abstract: A method for sublimating a thin film of Magnesium (Mg) on a semiconductor structure for improved efficiency is described. One embodiment includes a method comprised of providing a semiconductor substrate in a vacuum chamber, wherein the substrate comprises a window layer and an absorber layer made of CdTe. The method further includes heating the substrate to a diffusion temperature or greater followed by depositing a Mg film on the absorber layer using a sublimation process, wherein at least a portion of the Mg forms a Cd1-xMgxTe alloy within the absorber layer.

Abstract: A method for synthesizing a thin film of CZTS such as for use as an absorber in a photovoltaic device. The method includes providing a substrate in a chamber, and, then, depositing a film of CZTS material on the substrate, the CZTS material comprising copper, zinc, tin, and at least on chalcogen species. The depositing includes tuning an optical bandgap of the film with heterovalent alloying. The depositing is performed at low temperatures with the substrate provided in the chamber free of direct/active heating. For example, the substrate may be maintained at a temperature below about 150° C. during the depositing of the film. The heterovalent alloying involves controlling deposition rates for the copper and the zinc to define a copper to zinc ratio set the optical bandgap such as a value between about 1.0 eV and about 2.75 eV.

Abstract: A diode type ultraviolet sensor having a layered-structure body including a conductive layer composed of a sintered ceramic body having conductivity and a semiconductor layer composed of an oxide semiconductor including ZnO. The semiconductor layer is disposed on a principal surface of the conductive layer and forms a heterojunction with the conductive layer. The ultraviolet sensor is used in such a condition that the semiconductor layer is positioned at a light-receiving side irradiated by ultraviolet rays. The semiconductor layer is preferably composed of a sintered body. The sintered body serving as the conductive layer and sintered body serving as the semiconductor layer are preferably formed by co-firing. Terminal electrodes are provided on a principal surface and the other principal surface of the layered-structure body, respectively.

Abstract: A solar cell includes a cathode component, an anode component, sealant for assembling the cathode component and the anode component to form a closed space, and electrolyte accommodated in the closed space, in which the cathode component contains a lower transparent conductive substrate, a nano-oxide semiconductor thin film formed on the lower transparent conductive substrate, and dye attached to a nano-particle surface of the nano-oxide semiconductor thin film; and the anode component contains an upper transparent conductive substrate, and an anode electrode layer formed on the upper transparent conductive substrate, the nano-oxide semiconductor thin film and the anode electrode layer being arranged opposite to each other and contacting with the electrolyte, in which the anode component further contains a CdTe layer which is patterned to have an opening, and the anode electrode layer is located in the opening of the CdTe layer.

Abstract: Described is a continuous electroless deposition method and a system to form a solar cell buffer layer with a varying composition through its thickness are provided. The composition of the buffer layer is varied by varying the composition of a chemical bath deposition solution applied onto an absorber surface on which the buffer layer with varying composition is formed. In one example, the buffer layer with varying composition includes a first section containing CdS, a second section containing CdZnS formed on top of the already deposited CdS, and a third section containing ZnS is formed on the second section All the process steps are applied in a roll-to-roll fashion. In another example, a transparent conductive layer including a first transparent conductive film such as aluminum doped zinc oxide and a second transparent conductive film such as indium tin oxide is deposited over the buffer layer with the varying composition.

Abstract: The optical semiconductor of the present invention is an optical semiconductor containing In, Ga, Zn, O and N, and has a composition in which a part of oxygen (O) is substituted by nitrogen (N) in a general formula: In2xGa2(1-x)O3(ZnO)y, where x and y satisfy 0.2<x<1 and 0.5?y. In the general formula, x is preferably 0.5, and furthermore, y is preferably 1 or more and 6 or less, and more preferably 2 or 6. It is preferred that the optical semiconductor of the present invention have a wurtzite crystal structure. The optical semiconductor of the present invention is an excellent optical semiconductor because it has a smaller band gap, can utilize visible light, and has high carrier mobility and thus has high quantum efficiency.

Abstract: The present invention relates to a photodetector using nanoparticles, and more particularly, to a novel photodetector wherein surfaces of nanoparticles synthesized by a wet colloidal process are capped with organic materials which then serve as channels for electron migration, or nanoparticles, from which organic materials capped on the surfaces of nanoparticles are removed to form a close-packed particle structure, directly serve to transport electrons. In accordance with specific embodiments of the present invention, it is possible to improve performance of the photodetector and simplify the manufacturing process thereof.

Abstract: A method is provided for fabricating a thin film semiconductor device. The method includes providing a plurality of raw semiconductor materials. The raw semiconductor materials undergo a pre-reacting process to form a homogeneous compound semiconductor target material. The compound semiconductor target material is deposited onto a substrate to form a thin film having a composition substantially the same as a composition of the compound semiconductor target material.

Abstract: Solid-state imaging device of the present invention is a backside-illumination-type solid-state imaging device including wiring layer formed on first surface side of semiconductor substrate; and light receiving section that photoelectrically converts light incident from second surface side that is opposite from first surface side, wherein spontaneous polarization film formed of a material having spontaneous polarization is formed on a light receiving surface of light receiving section. Accordingly, a hole accumulation layer can be formed on the light receiving surface of light receiving section, and a dark current can be suppressed.

Abstract: Methods for manufacturing a cadmium telluride based thin film photovoltaic device are generally disclosed. A resistive transparent layer can be sputtered on a transparent conductive oxide layer from a metal alloy target in a sputtering atmosphere of argon and oxygen that includes argon from about 5% to about 40%. A cadmium sulfide layer can then be formed on the resistive transparent layer. A cadmium telluride layer can be formed on the cadmium sulfide layer; and a back contact layer can be formed on the cadmium telluride layer. The sputtering can be accomplished within a sputtering chamber.

Abstract: Thin film photovoltaic devices are provided that generally include a transparent conductive oxide layer on the glass, a multi-layer n-type stack on the transparent conductive oxide layer, and an absorber layer (e.g., a cadmium telluride layer) on the multi-layer n-type stack. The multi-layer n-type stack generally includes a first layer (e.g., a cadmium sulfide layer) and a second layer (e.g., a mixed phase layer). The multi-layer n-type stack can, in certain embodiments, include additional layers (e.g., a third layer, a fourth layer, etc.). Methods are also generally provided for manufacturing such thin film photovoltaic devices.

Abstract: The present invention relates to a binuclear ruthenium complex dye having a substituted bipyridyl group and represented by the general formula (1): wherein R1, R2, R3 and R4 each independently represents a linear or branched alkyl group having 1 to 30 carbon atoms, with the proviso that at least one of R1 and R2 represents a linear or branched alkyl group having 10 to 30 carbon atoms and at least one of R3 and R4 represents a linear or branched alkyl group having 10 to 30 carbon atoms; X represents a counter ion; n represents a number of the counter ions needed to neutralize a charge of the complex; and proton(s) (H+) of one or more carboxyl groups (—COOH) may dissociate.

Abstract: An integrated structure for solar modules may be formed by deposition of a transparent conductive material layer on a transparent support, forming scribe lines through the transparent conductive material layer, depositing a semiconductor window layer, depositing a solar cell absorber layer, depositing a first conductive layer, making cuts through the layers to expose a top surface of the transparent conductive material layer, depositing a second conductive layer and making isolation scribes that separate back contacts of adjacent solar cells from each other. Alternatively, two conductive films may be used with high resistance plugs, thereby permitting optimization of functions. The first film may be selected to optimize good ohmic contact with the absorber layer and/or to present a high diffusion barrier, whereas the second conductive film may be selected to optimize good ohmic contact with the transparent conductive material layer.

Abstract: An embodiment of nanostructure includes a conductive substrate; an insulating layer on the conductive substrate, metal nanoparticles, and elongated single crystal nanostructures. The insulating layer includes an array of pore channels. The metal nanoparticles are located at bottoms of the pore channels. The elongated single crystal nanostructures contact the metal nanoparticles and extend out of the pore channels. An embodiment of a photovoltaic device includes the nanostructure and a photoabsorption layer. An embodiment of a method of fabricating a nanostructure includes forming an insulating layer on a conductive substrate. The insulating layer has pore channels arranged in an array. Metal nanoparticles are formed in the pore channels. The metal nanoparticles conductively couple to the conductive layer. Elongated single crystal nanostructures are formed in the pore channels.

Abstract: A method for activation of CdTe films used in CdTe/CdS type thin film solar cells is described, in which a CdTe film is treated with a mixture formed by a fluorine-free chlorinated hydrocarbon and a gaseous chlorine-free fluorinated hydrocarbon. The fluorine-free chlorinated hydrocarbon and the gaseous chlorine-free fluorinated hydrocarbon are harmless to the ozone layer.

Abstract: One aspect of the present invention provides a method to make a film. The method includes providing a target comprising a sulfide within an oxygen free environment; applying a plurality of direct current pulses to the target to create a pulsed direct current plasma; sputtering the sulfide target with the pulsed DC plasma to eject a material comprising sulfur into the plasma; and depositing a film comprising the ejected material onto a support. Another aspect of the present invention provides a method of making a photovoltaic device.

Abstract: Apparatus and processes for thin film deposition of semiconducting layers in the formation of cadmium telluride thin film photovoltaic device are provided. The apparatus includes a series of integrally connected chambers, such as a load vacuum chamber connected to a load vacuum pump; a sputtering deposition chamber; a vacuum buffer chamber; and, a vapor deposition chamber. A conveyor system is operably disposed within the apparatus and configured for transporting substrates in a serial arrangement into and through the load vacuum chamber, the sputtering deposition chamber, the vacuum buffer chamber, and the vapor deposition chamber at a controlled speed. The sputtering deposition chamber; the vacuum buffer chamber; and the vapor deposition chamber are integrally connected such that the substrates being transported through the apparatus are kept at a system pressure less than about 760 Torr.