Abstract: In general, a photovoltaic module may include a binary semiconductor layer formed from a vapor rich in one component of a binary semiconductor source.

Abstract: A wafer-scale x-ray detector and a method of manufacturing the same are provided. The wafer-scale x-ray detector includes: a seamless silicon substrate electrically connected to a printed circuit substrate; a chip array having a plurality of pixel pads formed on a central region thereof and a plurality of pin pads formed at edges thereof on the seamless silicon substrate; a plurality of pixel electrodes formed to correspond to the pixel pads; vertical wirings and horizontal wirings formed to compensate a difference of regions expanded towards the pixel electrodes from the pixel pads between the chip array and the pixel electrodes; a redistribution layer having an insulating layer to separate the vertical wirings and the horizontal wirings; and a photoconductor layer and a common electrode which cover the pixel electrodes on the redistribution layer.

Abstract: A thin-film solar cell and a manufacturing method thereof are disclosed. The method of manufacturing the thin-film solar cell includes the steps of providing a substrate; forming a diffusion barrier layer on the substrate; forming a back electrode layer on the diffusion barrier layer; forming a precursor layer on the back electrode layer, and the precursor layer including at least Cu, In and Ga; providing an alkali layer on an upper surface of the precursor layer, and the alkali layer being formed of Li, Na, K, Rb, Cs, or an alkali metal compound; providing a selenization process for the precursor layer and the alkali layer to form an absorber layer, such that an atomic percentage concentration of the alkali metal in the absorber layer is ranged between 0.01%˜10%; forming at least a buffer layer on the absorber layer; and forming at least a front electrode layer on the buffer layer.

Abstract: A method of forming an ohmic contact to a surface of a Cd and Te containing compound film as may be found, for example in a photovoltaic cell. The method comprises forming a Te-rich layer on the surface of the Cd and Te containing compound film; depositing an interface layer on the Te-rich layer; and laying down a contact layer on the interface layer. The interface layer is composed of a metallic form of Zn and Cu.

Abstract: Thin film photovoltaic devices are provided that generally include a transparent conductive oxide layer on the glass, a multi-layer n-type stack on the transparent conductive oxide layer, and a cadmium telluride layer on the multi-layer n-type stack. The multi-layer n-type stack generally includes a first layer and a second layer, where the first layer comprises cadmium and sulfur and the second layer comprises cadmium and oxygen. The multi-layer n-type stack can, in certain embodiments, include additional layers (e.g., a third layer, a fourth layer, etc.). Methods are also generally provided for manufacturing such thin film photovoltaic devices.

Abstract: A photovoltaic element for photovoltaic applications includes a transparent substrate having a first side and a second side. A transparent electrically conductive oxide is disposed over the first side of the transparent substrate. Similarly, a hydrophilic oxide coating is disposed over and contacts the transparent electrically conductive oxide. Finally, a removable protective coating is disposed over the hydrophilic oxide coating.

Abstract: A coating of a photovoltaic device can include a self-assembled monolayer of molecules.

Abstract: A Kesterite film is vacuum deposited and annealed on a substrate. Deposition is conducted at low temperature to provide good composition control and efficient use of metals. Annealing is conducted at a high temperature for a short period of time. Thermal evaporation, E-beam evaporation or sputtering in a high vacuum environment may be employed as part of a deposition process.

Abstract: A structure for use in a photovoltaic device is disclosed, the structure includes a substrate, a buffer material, a barrier material in contact with the substrate; and a transparent conductive oxide between the buffer material and the barrier material. The buffer material comprises at least one of CdZnO and SnZnO. The structure can be included in a photovoltaic device. Methods for forming the structure are also disclosed.

Abstract: Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a CdTe absorber layer, the substrate structure including a Zn1?xMgxO window layer and a low conductivity buffer layer. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a Zn1?xMgxO window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process. The process including forming a CdTe absorber layer above the Zn1?xMgxO window layer.

Abstract: Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a MS 1-xOx window layer formed over the substrate structure, wherein M is an element from the group consisting of Zn, Sn, and In. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a MS 1-xOx window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process, wherein M is an element from the group consisting of Zn, Sn, and In.

Abstract: Method and system for forming a plurality of cadmium-sulfide layers. The method includes preparing a first solution and a second solution. The method further includes loading at least the first solution and the second solution into a pyrolysis-deposition system and placing a target structure into the pyrolysis-depositions system. The method further includes spraying the first solution through one or more first nozzles towards the target structure, forming, from the sprayed first solution, the first cadmium-sulfide layer, directly or indirectly, on the target structure, spraying the second solution through one or more second nozzles towards the target structure with at least the first cadmium-sulfide layer, and forming, from the sprayed second solution, the second cadmium-sulfide layer directly or indirectly, on the target structure.

Abstract: The present invention provides for new ohmic contact materials and diffusion barriers for Group IBIIIAVIA based solar cell structures, which eliminate two way diffusion while preserving the efficient ohmic contacts between the substrate and the absorber layers.

Abstract: The present invention provides a reaction chamber to monitor a metal ion in solution during the formation of a metal-sulfide layer on a substrate. The reaction chamber houses a solution of an ammonium ion, a metal ion and a buffer. The reaction chamber includes an anion-selective electrode in the solution to monitor the metal ion that measures the metal ion during metal-ammonium complex formation, metal-thiourea complex formation, metal sulfide composition formation, metal sulfide layer formation or a combination thereof.

Abstract: An apparatus and related process are provided for vapor deposition of a sublimated source material as a doped thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material supplied from a first feed tube. A second feed tube can provide a dopant material into the deposition head. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus to further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the underlying substrate.

Abstract: Exemplary embodiments of the present disclosure are directed to improve p-type doping (p-doping) of cadmium telluride (CdTe) for CdTe-based solar cells, such as cadmium Sulfide (Cds)/CdTe solar cells. Embodiments can achieve improved p-doping of CdTe by creating a high density of cadmium (Cd) vacancies (VCd) and subsequently substituting a high density of substitutional defects and/or defect complexes for the Cd vacancies that were created. Formation of a high density of substitutional defects and defect complexes as a p-dopant can improve light-to-electricity conversion efficiency, doping levels or hole concentrations, junction band bending, and/or ohmic contact associated with p-type CdTe (p-CdTe) based solar cells.

Abstract: Solar cells, methods for manufacturing a quantum dot layer for a solar cell, and methods for manufacturing solar cells are disclosed. An illustrative method for manufacturing a solar cell may include dissolving a cadmium-containing compound in a first non-aqueous solvent to form a cadmium precursor solution, dissolving a selenium-containing compound in a second non-aqueous solvent to form a selenium precursor solution, combining the cadmium precursor solution with the selenium precursor solution to form a mixed solution, and exposing an electron conductor film to the mixed solution. Exposing the electron conductor film to the mixed solution may cause a cadmium and selenium quantum dot layer to be provided on the electron conductor film. This is just one example method.

Abstract: An integrated apparatus is provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic module substrate and subsequent vapor treatment. The apparatus can include a load vacuum chamber, a first vapor deposition chamber; and a second vapor deposition chamber that are integrally connected such that substrates being transported through the apparatus are kept at a system pressure less than about 760 Torr. A conveyor system can be operably disposed within the apparatus and configured for transporting substrates in a serial arrangement into and through load vacuum chamber, into and through the first vapor deposition chamber, and into and through the second vapor deposition chamber at a controlled speed. Processes are also provided for manufacturing a thin film cadmium telluride thin film photovoltaic device.

Abstract: A system and method for enhancing the conversion efficiency of thin film photovoltaics. The thin film structure includes a photovoltaic absorbent layer covered by a confinement layer. A laser beam passes through the confinement layer and hits the photovoltaic absorbent layer. The laser can be pulsed to create localized rapid heating and cooling of the photovoltaic absorbent layer. The confinement layer confines the laser induced plasma plume creating a localized high-pressure condition for the photovoltaic absorbent layer. The laser beam can be scanned across specific regions of the thin film structure. The laser beam can be pulsed as a series of short pulses. The photovoltaic absorbent layer can be made of various materials including copper indium diselenide, gallium arsenide, and cadmium telluride. The photovoltaic absorbent layer can be sandwiched between a substrate and the confinement layer, and a molybdenum layer can be between the substrate and the photovoltaic absorbent layer.

Abstract: Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10) or with an intervening thin film layer or transition region (12). A particular application of the device is for a radiation detector.

Abstract: Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10) or with an intervening thin film layer or transition region (12). A particular application of the device is for a radiation detector.

Abstract: Methods for forming a conductive oxide layer on a substrate are provided. The method can include sputtering a transparent conductive oxide layer (“TCO layer”) on a substrate from a target (e.g., including cadmium stannate) at a sputtering temperature of about 10° C. to about 100° C. The TCO layer can then be annealed in an anneal temperature comprising cadmium at an annealing temperature of about 500° C. to about 700° C. The method of forming the TCO layer can be used in a method for manufacturing a cadmium telluride based thin film photovoltaic device, further including forming a cadmium sulfide layer over the transparent conductive oxide layer and forming a cadmium telluride layer over the cadmium sulfide layer.

Abstract: A method for selectively depositing a thin film structure on a substrate. The method includes providing a process gas to a surface of the substrate and directing concentrated electromagnetic energy from a source of energy to at least a portion of the surface. The process gas is decomposed onto the substrate to form a selectively deposited thin film structure. A thin film device and apparatus for forming a selectively deposited thin film structure are also disclosed.

Abstract: Methods are provided for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer. One method includes depositing at least one back contact material on a metal contact. The back contact material comprises a metal nitride or a metal phosphide. The method further includes depositing an absorber layer comprising cadmium and tellurium above the back contact material and thermally processing the back contact material, such that the back contact material interacts with the absorber layer to form an interlayer that lowers a contact resistance for the photovoltaic cell. A photovoltaic cell is also provided and includes comprising a metal contact, at least one back contact material disposed on the metal contact, and an absorber layer comprising a material comprising cadmium and tellurium disposed above the back contact material.

Abstract: A layer including modified cadmium telluride and unmodified cadmium telluride disposed within the cadmium telluride layer. The modified area includes a concentration of telluride that is greater than the concentration of telluride in the unmodified cadmium telluride area. The modified area also includes a hexagonal close packed crystal structure. A method for modifying a cadmium telluride layer and a thin film device are also disclosed.

Abstract: A method of forming a diode comprises the steps of forming an extraction region of a first conductivity type, forming an active region of a second conductivity type that is opposite the first conductivity type, and forming an exclusion region of the second conductivity type to be adjacent the active region. The active region is formed to be adjacent to the extraction region and along a reverse bias path of the extraction region and the exclusion region does not resupply minority carriers while removing majority carriers. At least one of the steps of forming the exclusion region and forming the extraction region includes the additional step of forming a barrier that substantially reduces the flow of the carriers that flow toward the active region, but does not rely on a diffusion length of the carriers to block the carriers.

Abstract: A radiation converter includes a directly converting semiconductor layer, wherein the semiconductor layer includes grains whose interfaces at least predominantly run parallel to a drift direction—constrained by an electric field—of electrons liberated in the semiconductor layer. in at least one embodiment, the charge carriers liberated by incident radiation quanta are accelerated in the electric field in the direction of the radiation incidence direction and on account of the columnar or pillar-like texture of the semiconductor layer, in comparison with the known radiation detectors, cross significantly fewer interfaces of the grains that are occupied by defect sites. This increases the charge carrier lifetime/mobility product in the direction of charge carrier transport. Consequently, it is possible to realize significantly thicker semiconductor layers for the counting and/or energy-selective detection of radiation quanta.

Abstract: Methods are generally provided for forming a cadmium sulfide layer on a substrate. In one particular embodiment, the method can include sputtering a cadmium sulfide layer on a substrate in a sputtering atmosphere comprising an inorganic fluorine source gas. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. Cadmium telluride based thin film photovoltaic devices are also generally provided. The device can include a substrate; a transparent conductive oxide layer on the substrate; a cadmium sulfide layer on the transparent conductive oxide layer; and, a cadmium telluride layer on the cadmium sulfide layer. The cadmium sulfide layer includes fluorine.

Abstract: Cadmium telluride thin film photovoltaic devices are generally provided. The device can include a substrate, a transparent conductive oxide layer on the substrate; a resistive transparent buffer layer on the transparent conductive oxide layer; a cadmium sulfide layer on the resistive transparent buffer layer; a cadmium telluride layer on the cadmium sulfide layer; and, a back contact layer on the cadmium telluride layer. The cadmium sulfide layer can include oxygen in a molar percentage greater than 0% to about 20%. In one particular embodiment, a second cadmium sulfide layer substantially free from oxygen can be positioned between the cadmium sulfide layer and the cadmium telluride layer. Methods of depositing a cadmium sulfide layer on a substrate and methods of manufacturing a cadmium telluride thin film photovoltaic device are also generally provided.

Abstract: A method of depositing a film of a first material, such as Cadmium Telluride on to a second material, such as Cadmium Sulphide by a physical vapour deposition process wherein said deposition is performed in an atmosphere having a relatively high ambient pressure, in one embodiment between 50 and 200 Torr.

Abstract: A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.

Abstract: A radiation detector comprising a II-VI compound semiconductor substrate that absorbs radiation having a first energy, a II-VI compound semiconductor layer of a first conductivity type provided on a main surface of the II-VI compound semiconductor substrate, a metal layer containing at least one of a group III element and a group V element provided on the II-VI compound semiconductor layer, a IV semiconductor layer having a second conductivity type opposite to the first conductivity type provided on the metal layer, and a IV semiconductor substrate that absorbs radiation having a second energy different from the first energy provided on the IV semiconductor layer.

Abstract: Methods of making a photovoltaic (PV) cell are disclosed. The methods comprise at least the steps of, providing a first component comprising a cadmium telluride (CdTe) layer comprising an interfacial region, and subjecting the first component to a functionalizing treatment in the presence of a material comprising copper.

Abstract: Provided are a flexible dye-sensitized solar cell and a method for producing the same.

Abstract: A method for fabricating a copper/indium/gallium/selenium solar cell by a wet process under non-vacuum condition is provided.

Abstract: A process and the required technical arrangement has been developed to produce single crystal solar panels or otherwise used semiconductors, which starts with the raw material to produce single crystal copper ribbons, extruded directly from the melt, with unharmed and optical surfaces onto which in the next unit a silicon or germanium film will be deposited. In the next unit the copper ribbon will be removed from the silicon film, whilst a hard plastic support or ceramic support is mounted, leaving copper contours on the silicon film to be used as electrical conductors or contacts. In the next unit a thin film is deposited of II-VI-compounds that enhance the infrared sensitivity of the base film of silicon or germanium up to 56% of the incoming light. This technology guarantees the lowest possible cost in production of the highest possible efficiency of materials for infrared applications and also for electronic applications.

Abstract: A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.

Abstract: Nanostructures and photovoltaic structures are disclosed. Methods for creating nanostructures are also presented.

Abstract: A method for fabricating a copper/indium/gallium/selenium solar cell by a wet process under non-vacuum condition is provided.

Abstract: A photoelectric converter includes: a lower electrode layer; a compound semiconductor thin film of chalcopyrite structure disposed on the lower electrode layer and having a high-resistivity layer in its surface; a transparent electrode layer disposed on the compound semiconductor thin film; an interlayer insulating layer; a zinc-oxide-based compound semiconductor thin film; and electrodes. With application of a reverse bias voltage between the transparent electrode layer and the lower electrode layer, and application of a bias voltage between the electrodes, the photoelectric converter photoelectrically converts ultraviolet region light. Thus, the photoelectric converter achieves photoelectric conversion of light in a wider region. Such a photoelectric converter and a process for producing the same, and a solid state imaging device to which the photoelectric converter is applied are provided.

Abstract: The invention relates to a processing device for the processing of in particular stacked proceed goods, particularly in the form of planar substrates for the production of thin layers, particularly of conducting, semiconducting, or insulating thin layers, comprising an evacuatable processing chamber for receiving a process gas, comprising at least one tempering device, particularly at least in sections in and/or in thermal operative connection with at least one wall, particularly all walls of the processing chamber, said chamber being equipped and suited to keep at least a partial region of the wall, particularly substantially the entire process chamber wall, of the process chamber at a predetermined temperature, particularly to keep the same at a first temperature during at least part of the processing of the stacked processed goods, said temperature not being below room temperature as the second temperature, and being below a third temperature which can be generated in the processing chamber and is above ro

Abstract: A heterojunction photovoltaic device comprises a chemically-doped n-type semiconductor layer, a charge-blocking layer that can have a compositionally graded configuration, and a chemically-doped p-type semiconductor layer. The charge-blocking layer can significantly reduce interfacial recombination of electrons and holes, increase open circuit voltage (Voc), and increase overall photovoltaic device efficiency.

Abstract: Provided is a manufacturing method for a quantum dot-sensitized solar cell electrode for the production of a quantum dot-sensitized solar cell far more excellent in solar energy capture efficiency than ever before. Also provided is a quantum dot-sensitized solar cell electrode obtained by such manufacturing method. Also provided is a quantum dot-sensitized solar cell using such electrode. Also provided is a quantum dot-sensitized solar cell electrode for the production of a quantum dot-sensitized solar cell far more excellent in solar energy capture efficiency than ever before. Also provided is a quantum dot-sensitized solar cell using such electrode.

Abstract: A cadmium telluride thin film photovoltaic device is provided having a thin film interlayer positioned between a cadmium sulfide layer and a cadmium telluride layer. The thin film interlayer can be an oxide thin film layer (e.g., an amorphous silica layer, a cadmium stannate layer, a zinc stannate layer, etc.) or a nitride film, and can act as a chemical barrier at the p-n junction to inhibit ion diffusion between the layers. The device can include a transparent conductive layer on a glass superstrate, a cadmium sulfide layer on the transparent conductive layer, a thin film interlayer on the cadmium sulfide layer, a cadmium telluride layer on the thin film interlayer, and a back contact on the cadmium telluride layer. Methods are also provided of manufacturing such devices.

Abstract: An apparatus and related process are provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus. The distribution plate includes a pattern of holes therethrough that further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the underlying substrate.

Abstract: Cadmium telluride thin film photovoltaic devices are generally disclosed including a graded alloy telluride layer. The device can include a cadmium sulfide layer, a graded alloy telluride layer on the cadmium sulfide layer, and a back contact on the graded alloy telluride layer. The graded alloy telluride layer generally has an increasing alloy concentration and decreasing cadmium concentration extending in a direction from the cadmium sulfide layer towards the back contact layer. The device may also include a cadmium telluride layer between the cadmium sulfide layer and the graded alloy telluride layer. Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device having a graded cadmium telluride structure.

Abstract: Methods for manufacturing a cadmium telluride based thin film photovoltaic device are generally disclosed. The method can include sputtering a resistive transparent layer on a transparent conductive oxide layer from an alloy target including zinc from about 5% by weight and about 33% by weight and tin. The method can also include forming a cadmium sulfide layer on the resistive transparent layer, forming a cadmium telluride layer on the cadmium sulfide layer, and forming a back contact layer on the cadmium telluride layer. Cadmium telluride thin film photovoltaic devices are also generally disclosed including a resistive transparent layer having a mixture of zinc oxide and tin oxide having a zinc oxide concentration between about 5% and about 33% by mole fraction.

Abstract: Methods of making a photovoltaic (PV) cell are disclosed. The methods comprise at least the steps of, providing a first component comprising a cadmium telluride (CdTe) layer comprising an interfacial region, and subjecting the first component to a functionalizing treatment in the presence of a material comprising copper.

Abstract: Methods for manufacturing a cadmium telluride based thin film photovoltaic device are generally disclosed. A resistive transparent layer can be sputtered on a transparent conductive oxide layer from a metal alloy target in a sputtering atmosphere of argon and oxygen that includes argon from about 5% to about 40%. A cadmium sulfide layer can then be formed on the resistive transparent layer. A cadmium telluride layer can be formed on the cadmium sulfide layer; and a back contact layer can be formed on the cadmium telluride layer. The sputtering can be accomplished within a sputtering chamber.

Abstract: The present invention relates to a photodetector using nanoparticles, and more particularly, to a novel photodetector wherein surfaces of nanoparticles synthesized by a wet colloidal process are capped with organic materials which then serve as channels for electron migration, or nanoparticles, from which organic materials capped on the surfaces of nanoparticles are removed to form a close-packed particle structure, directly serve to transport electrons. In accordance with specific embodiments of the present invention, it is possible to improve performance of the photodetector and simplify the manufacturing process thereof.