Abstract: A thin-film photovoltaic device and a process of making such a device, the device comprising a first layer of a chalkopyrite semiconductor of a first doping type; a second layer of intrinsic zinc oxide deposited by chemical vapour deposition; a third layer of zinc oxide semiconductor of a second doping type opposite to the first doping type and deposited by a method other than chemical vapour deposition; and wherein the second layer is arranged between the first and third layers.

Abstract: A stack-type image sensor using a compound semiconductor. The stack-type image sensor includes a stack of photoelectric conversion units which are sequentially arranged in a light incident direction and which absorb light in ascending order of a wavelength from shortest to longest.

Abstract: The ternary alloy CdSexTe1-x(2 1 1) and the quaternary alloy Cd1-zZnzSexTe1-x have been grown on Si(2 1 1) substrates using molecular beam epitaxy (MBE). The growth of CdSeTe is facilitated using a compound CdTe effusion source and a Se effusion source while the growth of CdZnSeTe is facilitated using a compound CdTe effusion source, a compound ZnTe effusion source, and an elemental Se source. The alloy compositions (x) and (z) of CdSexTe1-x ternary compound and Cd1-zZnzSexTe1-x are controlled through the Se/CdTe and ZnTe/CdTe flux ratios. The rate of Se incorporation is higher than the rate of Te incorporation as growth temperature increases. As-grown CdSeTe with 4% Se and CdZnSeTe with 4% Zn+Se, which is substantially lattice matched to long-wavelength infrared HgCdTe materials, exhibits excellent surface morphology, low surface defect density (less than 500 cm2), and a narrow X-ray rocking curve (a full-width at half maximum of 103 arcsec).

Abstract: A thin film material structure for solar cell devices. The thin film material structure includes a thickness of material comprises a plurality of single crystal structures. In a specific embodiment, each of the single crystal structure is configured in a column like shape. The column like shape has a dimension of about 0.01 micron to about 10 microns characterizes a first end and a second end. An optical absorption coefficient of greater than 104 cm?1 for light in a wavelength range comprising about 400 cm?1 to about 700 cm?1 characterizes the thickness of material.

Abstract: A metal oxide nanostructure is formed by oxidizing metallic metal in the presence of a solution containing a liquid ligand to form a metal-ligand complex, and decomposing the metal-ligand complex to form the metal oxide nanostructure. The metal-ligand complex can be a complex of zinc or copper with formamide. In one form, the nanostructure forms ZnO nanorods having a diameter of 10 to 1000 nm, where the nanorods having a hexagonal crystallographic morphology, and the nanorods are oriented perpendicular to a substrate.

Abstract: The present invention provides methods of forming metal oxide semiconductor nanostructures and, in particular, zinc oxide (ZnO) semiconductor nanostructures, possessing high surface area, plant-like morphologies on a variety of substrates. Optoelectronic devices, such as photovoltaic cells, incorporating the nanostructures are also provided.

Abstract: A diode type ultraviolet sensor having a layered-structure body including a conductive layer composed of a sintered ceramic body having conductivity and a semiconductor layer composed of an oxide semiconductor including ZnO. The semiconductor layer is disposed on a principal surface of the conductive layer and forms a heterojunction with the conductive layer. The ultraviolet sensor is used in such a condition that the semiconductor layer is positioned at a light-receiving side irradiated by ultraviolet rays. The semiconductor layer is preferably composed of a sintered body. The sintered body serving as the conductive layer and sintered body serving as the semiconductor layer are preferably formed by co-firing. Terminal electrodes are provided on a principal surface and the other principal surface of the layered-structure body, respectively.

Abstract: The present invention is a radiation detector that includes a crystalline substrate formed of a II-VI compound and a first electrode covering a substantial portion of one surface of the substrate. A plurality of second, segmented electrodes is provided in spaced relation on a surface of the substrate opposite the first electrode. A passivation layer is disposed between the second electrodes on the surface of the substrate opposite the first electrode. The passivation layer can also be positioned between the substrate and one or both of the first electrode and each second electrode. The present invention is also a method of forming the radiation detector.

Abstract: A method for manufacturing a photo-responsive device having a photo-sensitive layer is proposed. The method comprises the following steps: a) providing a clean substrate inside an evacuated evaporation chamber; b) evaporating lead oxide (PbO) from a first crucible to form a seeding layer on the surface of the substrate; c) affecting upon the seeding layer such that only tetragonal lead oxide forms the seeding layer and/or such that the initially grown orthorhombic lead oxide forming the seeding layer is transformed into tetragonal lead oxide; and d) continuing to evaporate lead oxide until the final thickness of the photo-sensitive layer has been deposited onto the substrate. As a result the method yields a photo-responsive device comprising a photo-sensitive layer of lead oxide, which entirely consists of tetragonal lead oxide.

Abstract: A photovoltaic device can include a protective layer including a tin oxide over a transparent conducting layer to stabilize the transparent conducting layer.

Abstract: An infrared photodetector containing a region of semiconductor quantum dots (1), n type doped in the barrier region (2), and sandwiched between respective layers of semiconductors of n type (3) and p type (4). When infrared photons (5) are absorbed, they create electronic transitions (6) from the confined states in the dots (7) to the conduction band (8). This causes the appearance of a voltage between device p (9) and n (10) contacts or the production of an electrical current. In either way, the detection of the infrared light is possible. A low band-pass filter (12) prevents high energy photons (13) from entering the device and causing electronic transitions (14) from the valence (15) band to the conduction band (8).