Abstract: Provided is a radiation sensor comprising: a phosphor layer that converts incident radiation into converted light containing a first light component having a first wavelength region that includes a maximum peak wavelength different from a maximum peak wavelength of the radiation, and a second light component having a second wavelength region of 400 nm to 460 nm, different from that of the radiation and the first wavelength region; an organic photoelectric conversion layer; and an insulating substrate provided with a charge detection layer, and that includes a storage capacitor and a thin film transistor having an oxide semiconductor active layer, wherein the first and second light components each pass through the organic photoelectric conversion layer and arrive at the oxide semiconductor active layer, and wherein an intensity of the second light component is lower than an intensity of the first light component.

Abstract: An optical sensor that is a transistor which includes a gate electrode including a semiconductor material where the carrier concentration is 1.0×1014/cm3 to 1.0×1017/cm3, an active layer including a semiconductor layer to form a channel by carriers of the same type as the gate electrode, a source electrode, a drain electrode, and a gate insulating film, wherein intensity of irradiated light is detected by a change in a value of current flowing between the source electrode and the drain electrode when the light is irradiated onto a depletion layer formed in the gate electrode; an optical sensor array, an optical sensor driving method, and an optical sensor array driving method are provided.

Abstract: Methods for forming photovoltaic devices, methods for forming semiconductor compounds, photovoltaic device and chemical solutions are presented. For example, a method for forming a photovoltaic device comprising a semiconductor layer includes forming the semiconductor layer by electrodeposition from an electrolyte solution. The electrolyte solution includes copper, indium, gallium, selenous acid (H2SeO3) and water.

Abstract: A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. A reset transistor is omitted by initializing the signal charge storage portion to a cathode potential of a photoelectric conversion element portion in the solid-state image sensor. When a thin film transistor which includes an oxide semiconductor layer and has an off-state current of 1×10?13 A or less is used as a transfer transistor of the solid-state image sensor, the potential of the signal charge storage portion is kept constant, so that a dynamic range can be improved. When a silicon semiconductor which can be used for a complementary metal oxide semiconductor is used for a peripheral circuit, a high-speed semiconductor device with low power consumption can be manufactured.

Abstract: A storage cell, integrated circuit (IC) chip with one or more storage cells that may be in an array of the storage cells and a method of forming the storage cell and IC. Each storage cell includes a stylus, the tip of which is phase change material. The phase change tip may be sandwiched between an electrode and conductive material, e.g., titanium nitride (TiN), tantalum nitride (TaN) or n-type semiconductor. The phase change layer may be a chalcogenide and in particular a germanium (Ge), antimony (Sb), tellurium (Te) (GST) layer.

Abstract: A method for manufacturing a photovoltaic module may include forming a photovoltaic device including a constituent material; forming a hydrophilic material adjacent to the constituent material, where the hydrophilic material includes a polyvinyl acetate or alcohol; and depositing a remediation agent adjacent to the hydrophilic material, such that the remediation agent is proximate to, but not contacting the constituent material.

Abstract: A method for manufacturing a photovoltaic module may include forming a photovoltaic device including a constituent material; forming a hydrophilic material adjacent to the constituent material, where the hydrophilic material includes an acrylate-based polymer; and depositing a remediation agent adjacent to the hydrophilic material, such that the remediation agent is proximate to, but not contacting the constituent material.

Abstract: A method to preparing Cadmium telluride surface before forming metal back contact is disclosed. The method can include removing carbon from Cadmium telluride surface.

Abstract: A scanning bone densitometer includes an x-ray source to produce x-rays and an x-ray detector receiving x-rays emitted from the x-ray source. The x-ray detector includes a cadmium tellurium (CdTe) semiconductor. The scanning bone densitometer also includes a controller moving the x-ray source and the x-ray detector along a transverse scanning path to acquire a plurality of scan images of an object of interest.

Abstract: A method of fabricating a semiconductor junction is disclosed. The method includes forming a quaternary heterovalent compound semiconductor alloy epilayer, determining a doping characteristic of the epilayer, and forming a secondary layer on the epilayer to create a semiconductor junction, the secondary layer being doped in response to the determined doping characteristic of the epilayer. Solar cell and light emitting diode designs are also disclosed.

Abstract: In one embodiment, a continuous electroless deposition method and a system to form a solar cell buffer layer with a varying composition through its thickness are provided. The composition of the buffer layer is varied by varying the composition of a chemical bath deposition solution applied onto an absorber surface on which the buffer layer with varying composition is formed. In one example, the buffer layer with varying composition includes a first section containing CdS, a second section containing CdZnS formed on top of the already deposited CdS, and a third section containing ZnS is formed on the second section All the process steps are applied in a roll-to-roll fashion. In another embodiment, a transparent conductive layer including a first transparent conductive film such as aluminum doped zinc oxide and a second transparent conductive film such as indium tin oxide is deposited over the buffer layer with the varying composition.

Abstract: A method of forming a conducting polymer based photovoltaic device including: (a) providing a transparent first electrode; (b) providing the transparent first electrode with a layer of metal oxide nanoparticles, wherein the metal oxide is selected from the group consisting of: TiO2, TiOx, and ZnO; (c) providing the layer of metal oxide nanoparticles with a bulk hetero junction layer including metal oxide nanoparticles and a hole conducting polymer containing thermocleavable groups, wherein the metal oxide is selected from the group consisting of: TiO2, TiOx, CeO2, Nb2O5 and ZnO; (d) heating the bulk heterojunction layer, to cleave the thermally cleavable groups to produce an insoluble hole containing polymer; (e) providing the bulk heterojunction layer with a hole transporting layer; and (f) providing the hole transporting layer with a second electrode. Also a conducting polymer based photovoltaic device, and polymeric compounds suitable for use in such devices and methods.

Abstract: This invention includes processes for making a photovoltaic absorber layer having a predetermined stoichiometry on a substrate by depositing a precursor having the predetermined stoichiometry onto the substrate and converting the deposited precursor into a photovoltaic absorber material. This invention further includes processes for making a photovoltaic absorber layer having a predetermined stoichiometry on a substrate by (a) providing a polymeric precursor having the predetermined stoichiometry; (b) providing a substrate; (c) depositing the precursor onto the substrate; and (d) heating the substrate.

Abstract: A digital X-ray detecting panel includes a wavelength transforming layer and a photoelectric detecting plate. The wavelength transforming layer is configured for transforming X-ray into visible light. The photoelectric detecting plate is disposed under the wavelength transforming layer. The photoelectric detecting plate includes a substrate and a number of photoelectric detecting units disposed on the substrate and arranged in an array. Each of the photoelectric detecting units includes a thin film transistor and a photodiode electrically connected to the thin film transistor. The thin film transistor has an oxide semiconductor layer. The digital X-ray detecting panel can avoid a photocurrent in the thin film transistor, and thereby improving detecting accuracy of the digital X-ray detecting panel. A method for manufacturing the digital X-ray detecting panel is also provided.

Abstract: One embodiment in accordance with the invention is a solar cell comprising a non-single crystal substrate; a nanowire grown from a surface of the non-single crystal substrate; and an electrode coupled to the nanowire, wherein the nanowire is electrically conductive and is for absorbing electromagnetic wave and generating a current.

Abstract: A nanorod is disclosed. It includes a linear body including three or less alternating regions including a first region and a second region, wherein the first region comprises a first material comprising a first ionic material and the second region comprises a second material comprising a second ionic material.

Abstract: The present invention discloses a laser-scribing method to make a bifacial thin film solar cell and the structure thereof. The laser-scribing method is to form scribing patterns that penetrate different structural layers during the process of forming various structural layers. After the laser-scribing, the top solar cell unit is attached with the bottom solar cell unit by various combining steps to form a solar cell assembly. The solar cell assembly can receive light from both sides via the absorber layers of both of the top solar cell unit and the bottom solar cell unit. The solar cell assembly has an increased output efficiency and a greater power density and the cost of the manufacturing is therefore reduced.

Abstract: Photovoltaic devices and methods of making the same, are disclosed herein. The cell comprises: a first electrically conductive layer; at least one photoelectrochemical layer comprising metal-oxide particles, an electrolyte solution, an asphaltene dye, and a second electrically conductive layer.

Abstract: A photovoltaic device can include a doped contact layer adjacent to a semiconductor absorber layer, where the doped contact layer includes a metal base material and a dopant.

Abstract: Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10) or with an intervening thin film layer or transition region (12). A particular application of the device is for a radiation detector.

Abstract: A method for manufacturing a multi-layered structure can include annealing a stack, where the annealing can include heating the stack in the presence of an inert gas, and where the stack includes a layer including cadmium and tin.

Abstract: Disclosed is a dye-sensitized solar cell which can simultaneously realize an excellent photoelectric conversion efficiency and excellent durability. The dye-sensitized solar cell is also suitable when a resin film is used as a base material. The dye-sensitized solar cell comprises an electroconductive base material, and a metal oxide semiconductor layer formed of a semiconductor film with a dye adsorbed on the surface thereof, a charge transfer layer, and a counter electrode provided in that order on the electroconductive base material and is characterized in that a metal oxide intermediate layer formed of fine particles of a metal oxide is provided between the electroconductive base material and the metal oxide semiconductor layer and the electroconductive base material comprises a transparent base material, and a metallic current collecting layer formed of metallic fine wires and an electroconductive polymer-containing transparent electroconductive layer provided on the transparent base material.

Abstract: A method is provided for fabricating a thin-film semiconductor device. The method includes providing a plurality of raw semiconductor materials. The raw semiconductor materials undergo a pre-reacting process to form a homogeneous compound semiconductor material. This pre-reaction typically includes processing above the liquidus temperature of the compound semiconductor. The compound semiconductor material is reduced to a particulate form and deposited onto a substrate to form a thin-film having a composition and atomic structure substantially the same as a composition and atomic structure of the compound semiconductor material.

Abstract: A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer.

Abstract: Provided are methods and apparatuses for processing photovoltaic cell metallic substrates to remove various surface defects. In certain embodiments, a thin stainless steel foil is polished using a proposed method leading to a substantial, e.g., twice or more, increase in its surface gloss. In certain embodiments, a method in accordance with the present invention involves contacting a substrate surface with a fixed-abrasive filament roller brush. The brush may be a close-wound coil brush. The brush includes filaments carrying 5-20 micrometer abrasive particles that are permanently fixed in the brush filaments, for example a polymer base material, such as nylon. The particles may be made of silicon carbide and/or other abrasive materials. In certain embodiments, a substrate surface is polished using a series of roller brushes, at least two of which rotate in different directions with respect to that surface.

Abstract: A conformal coherent wideband antenna coupled IR detector array included a plurality of unit cells each having a dimension that includes an antenna for focusing radiation onto an absorber element sized less than the dimension. In one embodiment, the absorber element may be formed of a mercury cadmium telluride alloy. According to a further embodiment, the antenna array may be fabricated using sub-wavelength fabrication processes.

Abstract: Using a manufacturing method which includes a process (A) for forming a particle layer of a plurality of one or more types of particles consisting mainly of a metal oxide and/or a metal hydroxide, and a process (B) for forming, using a reaction solution which includes one or more types of metal ions, a metal oxide layer consisting mainly of an oxide of the one or more types of metal ions on the particle layer so as to cover the particle layer without any cracks by a liquid phase method under a pH condition in which at least a portion of the plurality of particles remains without being dissolved by the reaction solution, a layered film having a layered structure of the particle layer and the metal oxide layer is manufactured.

Abstract: The invention relates generally to methods of fabricating photovoltaic stack structures. Methods of the invention find particular use in solar cell fabrication. The performance of a photovoltaic stack can be improved by independent control of fabrication conditions during stack formation, particularly depositing window layers after formation of absorber layers where fabrication conditions of absorber layers would otherwise detrimentally affect quantum grain structures of window layers.

Abstract: To provide a photoelectric conversion device that has excellent photoelectric conversion efficiency and enhanced reliability without wide variations in performance. A manufacturing method of a photoelectric conversion device that includes a working electrode having a dye-supported metal oxide layer, a counter electrode disposed so as to face the working electrode, and an electrolyte layer enclosed between the working electrode and the counter electrode, includes: a step of preparing an electrolyte sheet in which an electrolyte is retained by a reticulated support member; and a step of enclosing the electrolyte sheet between the working electrode and the counter electrode.

Abstract: Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a solution on a substrate to form a precursor layer. The solution comprises of at least one equilibrium and/or near equilibrium material. The precursor layer is processed in one or more steps to form a photovoltaic absorber layer. In one embodiment, the absorber layer may be created by processing the precursor layer into a solid film and then thermally reacting the solid film in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer. Optionally, the absorber layer may be processed by thermal reaction of the precursor layer in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer.

Abstract: The present invention provides methods of forming metal oxide semiconductor nanostructures and, in particular, zinc oxide (ZnO) semiconductor nanostructures, possessing high surface area, plant-like morphologies on a variety of substrates. Optoelectronic devices, such as photovoltaic cells, incorporating the nanostructures are also provided.

Abstract: An electrode substrate for a photoelectric conversion element includes: current collecting wires; and a protective layer covering the current collecting wires, wherein the protective layer includes a first protective layer containing glass components and a second protective layer which is composed of an insulating resin layer and provided on the first protective layer.

Abstract: A method of forming a diode comprises the steps of forming an extraction region of a first conductivity type, forming an active region of a second conductivity type that is opposite the first conductivity type, and forming an exclusion region of the second conductivity type to be adjacent the active region. The active region is formed to be adjacent to the extraction region and along a reverse bias path of the extraction region and the exclusion region does not resupply minority carriers while removing majority carriers. At least one of the steps of forming the exclusion region and forming the extraction region includes the additional step of forming a barrier that substantially reduces the flow of the carriers that flow toward the active region, but does not rely on a diffusion length of the carriers to block the carriers.

Abstract: A storage cell, integrated circuit (IC) chip with one or more storage cells that may be in an array of the storage cells and a method of forming the storage cell and IC. Each storage cell includes a stylus, the tip of which is phase change material. The phase change tip may be sandwiched between an electrode and conductive material, e.g., titanium nitride (TiN), tantalum nitride (TaN) or n-type semiconductor. The phase change layer may be a chalcogenide and in particular a germanium (Ge), antimony (Sb), tellurium (Te) (GST) layer.

Abstract: A method of manufacturing an electrode substrate for a photoelectric conversion element which includes: forming a transparent conductive layer and a collector wire on a substrate; forming an oxide semiconductor layer in a region of the transparent conductive layer different from a region in which the collector wire is formed; forming an porous oxide semiconductor layer by firing the oxide semiconductor layer; after firing, forming a protective layer covering the collector wires, the protective layer composed of an insulating resin having a thermal resistance at 250° C. or higher; heating the substrate at 250° C. or higher during or after the formation of the protective layer; and after the heating, allowing adsorption of dyes in the porous oxide semiconductor layer.

Abstract: A photovoltaic cell can include a substrate having a transparent conductive oxide layer, a CdS/CdTe layer, and a back metal contact. The back metal contact can be deposited by sputtering or by chemical vapor deposition.

Abstract: A photovoltaic cell can include a substrate having a transparent conductive oxide layer, a heterojunction layer, and a cadmium telluride layer. The layers can be deposited by sputtering or by chemical vapor deposition.

Abstract: Provided are a photosensor, a photosensor apparatus including the photosensor, and a display apparatus including the photosensor apparatus. The photosensor includes a substrate; a first light receiving layer which is formed on the substrate and comprises an oxide; a second light receiving layer which is connected to the first light receiving layer and comprises an organic material; and first and second electrodes which are respectively connected to the first and second light receiving layers.

Abstract: A photovoltaic device can include a semiconductor absorber layer with improved cadmium telluride orientation.

Abstract: An electrode structure comprises a semiconductor junction comprising an n-type semiconductor layer and a p-type semiconductor layer; a hole exnihilation layer on the p-type semiconductor layer; and a transparent electrode layer on the hole exnihilation layer. The electrode structure further comprises a conductive layer between the hole exnihilation layer and the transparent electrode layer. In the electrode structure, one or more of the hole exnihilation layer, the conductive layer and the transparent electrode layer may be formed by an atomic layer deposition. In the electrode structure, a transparent electrode formed of a degenerated n-type oxide semiconductor does not come in direct contact with a p-type semiconductor, and thus, annihilation or recombination of holes generated in the p-type semiconductor can be reduced, which increases the carrier generation efficiency.

Abstract: A solar cell and a method of fabricating the same are provided according to one or more embodiments. According to an embodiment, the solar cell includes a substrate, a back electrode layer formed on the substrate, a light absorbing layer formed on the back electrode layer, and a transparent electrode layer formed on the light absorbing layer, wherein the light absorbing layer is comprised of copper (Cu), gallium (Ga), indium (In), sulfur (S), and selenium (Se) and includes a first concentration region in which concentrations of sulfur (S) gradually decrease in the light absorbing layer going in a first direction from the back electrode layer to the transparent electrode layer.

Abstract: At least one embodiment of the invention relates to an X-ray radiation detector, in particular for use in a CT system. In at least one embodiment, the X-ray radiation detector includes a semiconductor material used for detection, at least two ohmic contacts between the semiconductor material and a contact material, the semiconductor material and contact material each having a specific excitation energy of the charge carriers, with the excitation energy of the contact material corresponding to the excitation energy of the semiconductor material. At least one embodiment of the invention furthermore relates to a CT system in which an X-ray radiation detector is used, the X-ray radiation detector advantageously having at least two ideal ohmic contacts according to at least one embodiment of the invention.

Abstract: An inexpensive system is provided for manufacturing a CdTe solar cell in a single pass using sputtering without the need for a wet process and without the need for high temperature gas diffusion. Thus, toxic gases and wet chemical baths are advantageously eliminated. A halogen gas, such as chlorine, and oxygen are added during the sputtering of a CdTe film, so that a wet process is eliminated and the deposited CdTe film can be annealed rapidly, such as by a rapid thermal anneal process (RTA).

Abstract: A method for forming a nanostructure according to one embodiment includes creating a hole in an insulating layer positioned over an electrically conductive layer; and forming a nanocable in the hole such that the nanocable extends through the hole in the insulating layer and protrudes therefrom, the nanocable being in communication with the electrically conductive layer. Additional systems and methods are also presented.

Abstract: An optical sensor element has a gate electrode opposed to a semiconductor layer made of an oxide semiconductor via a gate insulating film, source and drain electrodes being connected to the semiconductor layer, wherein the amount of light received by the semiconductor layer is read out as a drain current which changes in a non-volatile manner relative to a gate voltage.

Abstract: The present invention relates to a photodetector using nanoparticles, and more particularly, to a novel photodetector wherein surfaces of nanoparticles synthesized by a wet colloidal process are capped with organic materials which then serve as channels for electron migration, or nanoparticles, from which organic materials capped on the surfaces of nanoparticles are removed to form a close-packed particle structure, directly serve to transport electrons. In accordance with specific embodiments of the present invention, it is possible to improve performance of the photodetector and simplify the manufacturing process thereof.

Abstract: Provided are a dye-sensitized solar cell and a method of fabricating the same. The dye-sensitized solar cell includes an electrode structure including a conductive layer having pores that are regularly arranged, a semiconductor oxide layer disposed on a surface of the conductive layer, and a dye layer disposed on a surface of the semiconductor oxide layer.

Abstract: A photovoltaic cell, particularly a color-sensitized solar cell, comprises a conductive support substrate, coated with a metal oxide semiconductor layer, a color layer embodied so as to electronically interact with the metal oxide semiconductor layer, an electrolyte later that is applied to the color layer, and a counter-electrode which is connected to the electrolyte layer. The support substrate and/or the counter-electrode is/are made from a flexible fabric composed of a plurality of interwoven fibers.

Abstract: A method of manufacturing a thin film photovoltaic device includes depositing a first compound semiconductor layer on a substrate and exposing the device to plasma, the plasma treating the layer.

Abstract: A structure for a single junction solar cell. The structure includes a substrate member having a surface region. The structure includes a first electrode structure overlying the surface region of the substrate member. A P absorber layer is formed overlying the first electrode structure. In a specific embodiment, the P absorber layer has a P? type impurity characteristics and a first optical absorption coefficient greater than 104 cm?1 in a wavelength range comprising 400 nm to 800 nm. An N+ layer is provided overlying the P absorber layer and an interface region formed within a vicinity of the P layer and the N+ layer. The structure also includes a high resistivity buffer layer overlying the N+ layer and a second electrode structure overlying the buffer layer.