Abstract: For forming the separating lines, (5, 6, 7) which are produced in the functional layers (2, 3, 4) deposited on a transparent substrate (1) during manufacture of a photovoltaic module with series-connected cells (C1, C2, . . . ), there are used laser scanners (8) whose laser beam (14) produces in the field (17) scanned thereby a plurality of adjacent separating line sections (18) in the functional layer (2, 3, 4). The laser scanners (8) are then moved relative to the coated substrate (1) in the direction (Y) of the separating lines (5, 6, 7) by a distance corresponding at the most to the length (L) of the scanned field (17) to thereby form continuous separating lines (5, 6, 7) through mutually flush separating line sections (18).

Abstract: An imaging system may include an imager with frontside components such as imaging pixels and backside components. The backside components may include at least a first redistribution layer having metal trenches and through-silicon vias (TSVs) that couple at least some of the backside components to the frontside components. The metal trenches and through-silicon vias may be formed simultaneously. The through-silicon vias may have a width greater than the width of the metal trenches. The greater width of the through-silicon vias may facilitate forming the through-silicon vias simultaneously with the metal trenches.

Abstract: A method for manufacture of a photovoltaic module is provided, the method comprising providing one or more photovoltaic (PV) cells, each being configured to convert incident light into electrical energy, providing a printed circuit board (PCB) configured to electrically connect the PV cells to each other, disposing the PV cells on the PCB, providing a solder paste between the electrically conductive portions of the PV cells and PCB, and heating the PV cells and PCB to a temperature sufficient to melt the solder paste, thereby soldering the PV cells to the PCB.

Abstract: A method is disclosed for fabricating a photovoltaic cell comprising local back contacts. In one aspect, the method includes providing a silicon substrate, depositing a surface passivation layer at a rear side of the silicon substrate, forming delaminated regions or bubbles at an interface between the surface passivation layer and the silicon substrate, depositing a metal layer on the surface passivation layer, and performing a metal firing.

Abstract: A chip device with a number of individually powered parts, such as photoreceptors. A mesh is provided to provide power to the individual photoreceptors. The mesh may be provided for ground and power and/or both. The mesh may be on different layers, so that one portion of the mesh is exactly over the other portion of the mesh. The mesh takes up a portion of real estate on the chip in between the individual photoreceptors, in locations where image sensing parts cannot be located. In an embodiment, the mesh can be intentionally broken at various locations to optimize the path length.

Abstract: Apparatus and methods are provided for high density packaging of semiconductor chips using silicon space transformer chip level package structures, which allow high density chip interconnection and/or integration of multiple chips or chip stacks high I/O interconnection and heterogeneous chip or function integration.

Abstract: The image sensor includes a substrate; a wiring structure formed on a front side of the substrate and including a plurality of wiring layers and a plurality of insulating films; a first well formed within the substrate and having a first conductivity type; and a first metal wiring layer directly contacting a backside of the substrate and configured to apply a first well bias to the first well.

Abstract: An interconnected arrangement of photovoltaic cells is achieved using laminating current collector electrodes. The electrodes comprise a pattern of conductive material extending over a first surface of sheetlike substrate material. The first surface comprises material having adhesive affinity for a selected conductive surface. Application of the electrode to the selected conductive surface brings the first surface of the sheetlike substrate into adhesive contact with the conductive surface and simultaneously brings the conductive surface into firm contact with the conductive material extending over first surface of the sheetlike substrate. Use of the laminating current collector electrodes allows facile and continuous production of expansive area interconnected photovoltaic arrays.

Abstract: An optoelectronic semiconductor body has a front face provided for the emission and/or reception of electromagnetic radiation, a rear face which lies opposite the front face and is provided for application onto a support plate, and an active semiconductor layer sequence which in the direction from the rear face to the front face includes a layer of a first conductivity type, an active layer and a layer of a second conductivity type in this sequence.

Abstract: An imaging device is formed in a semiconductor substrate. The device includes a matrix array of photosites. Each photosite is formed of a semiconductor region for storing charge, a semiconductor region for reading charge specific to said photosite, and a charge transfer circuit configured so as to permit a transfer of charge between the charge storage region and the charge reading region. Each photosite further includes at least one buried first electrode. At least one part of that buried first electrode bounds at least one part of the charge storage region. The charge transfer circuit for each photosite includes at least one second buried electrode.

Abstract: A flexible solar cell assembly having solar cells that are positioned within a sealed module chamber. A sealed wiring chamber is positioned on an end of the sealed module chamber and is interposed between the sealed module chamber and a junction box. Wiring interconnecting the junction box to the solar cells in the sealed module chamber is routed through the sealed wiring chamber to inhibit water entry into the sealed module chamber via the wiring.

Abstract: Disclosed are an electrically conductive paste (7) containing an electrically conductive powder including electrically conductive particles (21), wherein the electrically conductive particles (21) each have a basic material (21a), and an electrically conductive layer (21b) covering at least one portion of the outer surface of the basic material (21a); an electrode (71, 72, 81, 82), for a semiconductor device, formed by use of the paste; a semiconductor device (10, 35); and a method for producing the semiconductor device (10, 35) by use of the paste.

Abstract: The invention concerns a method for fabricating at least one detector pixel cell (45) connected to an element (82) formed in a weakly doped silicon substrate (81), characterized in that it comprises: firstly, a first step to fabricate at least one layer (61) by implantation doping and activation annealing, secondly, a second step to fabricate at least one connection node (85) in a circuit (83), from an element (82) formed in the substrate (81) by dry etching and metallization, a step to combine, by bonding, the fabricated doped layer (61) with the fabricated connection node (85); and a step to individualize at least one pixel cell (45) in the doped layer (61) by dry etching; and a passivation and opening step opposite the individualized cell (45), by dry etching. The invention also comprises a sensor including at least one such cell.

Abstract: Photovoltaic module and method for making same. The module includes a first sub-module and a second sub-module. The first sub-module includes a first plurality of photovoltaic cells. The first plurality of photovoltaic cells is connected in series starting with a first photovoltaic cell and ending with a second photovoltaic cell. The first photovoltaic cell includes a first front electrode. The second photovoltaic cell includes a first back electrode. The second sub-module includes a second plurality of photovoltaic cells. The second plurality of photovoltaic cells is connected in series starting with a third photovoltaic cell and ending with a fourth photovoltaic cell. The third photovoltaic cell includes a second front electrode. The fourth photovoltaic cell includes a second back electrode. Additionally, the photovoltaic module includes a first bus bar and a second bus bar.

Abstract: A photovoltaic cell is provided as a composite unit together with elements of an integrated circuit on a common substrate. In a described embodiment, connections are established between a photovoltaic cell portion and a circuitry portion of an integrated structure to enable self-powering of the circuitry portion by the photovoltaic cell portion.

Abstract: A photovoltaic cell is provided as a composite unit together with elements of an integrated circuit on a common substrate. In a described embodiment, connections are established between a multiple photovoltaic cell portion and a circuitry portion of an integrated structure to enable self-powering of the circuitry portion by the multiple photovoltaic cell portion.

Abstract: The disclosure provides transparent and partially transparent flexible thin film solar cells. The aim is achieved in that flexible thin film solar cells are processed using a tool, such that the entire cell structure is pierced, the transparency is ensured by the openings thus created, and the energy conversion yield remains high.

Abstract: An apparatus and methods for ion implantation of solar cells. The disclosure provide enhanced throughput and recued or elimination of defects after SPER anneal step. The substrate is continually implanted using continuous high dose-rate implantation, leading to efficient defect accumulation, i.e., amorphization, while suppressing dynamic self-annealing.

Abstract: A photovoltaic structure is provided. The photovoltaic structure has photovoltaic elements that can be electrically connected to one another to reduce mismatch. The photovoltaic elements can be electrically connected based on sorting the photovoltaic elements by irradiance level, minimizing mismatch, or maximizing output power. Where sorting is used, the photovoltaic elements can be connected in a serpentine arrangement.

Abstract: An image pick-up module and method for producing an image pick-up module. An image pick-up module, particularly for installation in an endoscope, the image pick-up module having an electronic image sensor, a first circuit board, a second circuit board and a cable.

Abstract: A backside illumination type solid-state imaging device includes stacked semiconductor chips which are formed such that two or more semiconductor chip units are bonded to each other, at least a first semiconductor chip unit is formed with a pixel array and a first multi-layered wiring layer, and a second semiconductor chip unit is formed with a logic circuit and a second multi-layered wiring layer, a connection wire which connects the first semiconductor chip unit and the second semiconductor chip unit, and a first shield wire which shields adjacent connection wires in one direction therebetween.

Abstract: A package structure of a concentrated photovoltaic cell includes a ceramic baseplate whereon a cavity is formed, the cavity having two opposite internal walls respectively having staircase structures, each having an upper step and a lower step; a photovoltaic chip disposed on a bottom surface of the cavity; a first electrode circuit penetrating the ceramic baseplate and with a top end electrically connected to the photovoltaic chip; a second electrode circuit penetrating the lower steps on the two sides of the ceramic baseplate and connecting with the photovoltaic cell through bonded wires; and a transparent cover disposed on the upper steps for covering the cavity and the photovoltaic chip. A fabrication method for the aforementioned package structure is also provided. The aforementioned package structure has the advantages of being more efficient in heat dissipation and effective in protecting the photovoltaic chip.

Abstract: Photovoltaic (PV) crystalline silicon modules and methods of manufacturing wherein the modules contain a non-glass front sheet, upper and lower encapsulate layers, a PV cell layer, an insulating sheet, and a structural back plane comprising an aluminum composite. The front sheet can be comprised of ETFE, the encapsulate layers comprise EVA, and the back plane preferably comprises APA. This particular configuration results in a lightweight PV module that still retains a high power density, and can be readily installed onto rooftops without traditional heavy racking. The PV module may be adhered to the roof using a double sided pressure sensitive adhesive or heat welded.

Abstract: Convey means for pitch-feeding the semiconductor cell to which the conductive tapes have been attached, lead wire processing means for forming-processing the lead wire, provisional pressure-bonding means which is provided at a part opposed to the semiconductor cell that is pitch-fed, holds the lead wires which are forming-processed, repeats provisional pressure-bonding of the lead wires to the conductive tapes provided on the upper surface and lower surface of the semiconductor cell that is pitch-fed, and alternately connects the upper surfaces and lower surfaces of the neighboring semiconductor cells, and main pressure-bonding means which is disposed on a downstream side of the provisional pressure-bonding means in a direction of conveyance of the semiconductor cell, and which mainly pressure-bonds, simultaneously, the paired upper and lower lead wires which have been provisionally pressure-bonded to the upper surface and lower surface of the semiconductor cell.

Abstract: An image sensor with decreased optical interference between adjacent pixels is provided. An image sensor, which is divided into a pixel region and a peripheral region, the image sensor including a photodiode formed in a substrate in the pixel region, first to Mth metal lines formed over the substrate in the pixel region, where M is a natural number greater than approximately 1, first to Nth metal lines formed over a substrate in the peripheral region, where N is a natural number greater than M, at least one layer of dummy metal lines formed over the Mth metal lines but formed not to overlap with the photodiode, and a microlens formed over the one layer of the dummy metal lines to overlap with the photodiode.

Abstract: An improved, lower cost method of processing substrates, such as to create solar cells, is disclosed. The doped regions are created on the substrate, using a mask or without the use of lithography or masks. After the implantation is complete, visual recognition is used to determine the exact region that was implanted. This information can then be used by subsequent process steps to crate a suitable metallization layer and provide alignment information. These techniques can also be used in other ion implanter applications. In another aspect, a dot pattern selective emitter is created, and imaging is used to determine the appropriate metallization layer.

Abstract: Provided is a photovoltaic panel in which a plurality of photovoltaic cells is electrically connected in series, and in which at least one of the photovoltaic cells is set as a non-use cell which is not electrically connected to the other photovoltaic cells and not used.

Abstract: The Problems To provide a smartcard that embeds a fingerprint image acquisition sensor, having thickens of 0.76 mm or less compiling with the International Standard organization (ISO). Means for Solving the Problem A smartcard comprising a core substrate which is configured with a film substrate 21 on which a fingerprint image acquisition sensor IC chip 11, an electric circuit pattern and accompanying electrical, and a reinforcing metal or composite plate 1 which is adhered to the back surface of the fingerprint image acquisition sensor IC chip 11; an over sheets 31 and an under sheet 33, which are made of thermoplastic or paper, sandwiching the core substrate 33, where the over sheet 31 and the under sheet 33 are attached with a thermal adhesive sheet, which functions as a mechanical buffer to protect the electrical components from external stress. The adhesive sheet is made of urethane rubber or similar substance.

Abstract: It is an object of the present invention to provide a solid-state imaging device that can achieve a high sensitivity, finer pixels for increasing the number of pixels, a high-speed operation, and high image quality, and a method for manufacturing the same. There are provided a plurality of photoelectric conversion portions arranged in a matrix on a substrate, a vertical transfer channel arranged between vertical columns of the photoelectric conversion portions, a plurality of vertical transfer electrodes for transferring a charge of the photoelectric conversion portions to the vertical transfer channel, a light-shielding film that is laminated on the vertical transfer electrodes via a first insulating film and has a plurality of window portions, each defining a light-receiving portion of each of the photoelectric conversion portions, and a shunt wiring that is arranged in a region overlapping the vertical transfer channel and is insulated from the light-shielding film by a second insulating film.

Abstract: A semiconductor device includes a lead frame, a first semiconductor element mounted on the lead frame, a frame-like member formed on the lead frame, surrounding the first semiconductor element, and a protective resin filling a space surrounded by the frame-like member. The lead frame has an external terminal protruding outside the frame-like member. The external terminal has a barrier portion which is located at an end portion thereof protruding from the frame-like member and rises from a top surface of the external terminal.

Abstract: A pixel array in an image sensor includes multiple pixels. The pixel array includes vertical shift registers for shifting charge out of the pixel array. The vertical shift registers can be interspersed between the pixels, such as in an interline image sensor, or the photosensitive areas in the pixels can operate as vertical shift registers. The pixels are divided into blocks of pixels. One or more electrodes are disposed over each pixel. Conductive strips are disposed over the electrodes. Contacts are used to connect selected electrodes to respective conductive strips. The contacts in at least one block of pixels are positioned according to one contact pattern while the contacts in one or more other blocks are positioned according to a different contact pattern. The different contact patterns reduce or eliminate visible patterns in the contact locations.

Abstract: The invention provides a solar package structure and a method for fabricating the same. A solar package structure includes a carrier wafer. A conductive pattern layer is disposed on the carrier wafer. A solar cell chip array is disposed on the conductive pattern layer, wherein the solar cell chip array electrically connects to the conductive pattern layer. A first spacer dam is disposed on the carrier wafer, surrounding the solar cell chip array. A first optical element array is disposed over the carrier wafer to concentrate sunbeams onto the solar cell chip array, wherein the first optical element array is spaced apart from the carrier wafer by the first spacer dam.

Abstract: A pixel array in an image sensor includes multiple pixels. The pixel array includes vertical shift registers for shifting charge out of the pixel array. The vertical shift registers can be interspersed between the pixels, such as in an interline image sensor, or the photosensitive areas in the pixels can operate as vertical shift registers. The pixels are divided into blocks of pixels. One or more electrodes are disposed over each pixel. Conductive strips are disposed over the electrodes. Contacts are used to connect selected electrodes to respective conductive strips. The contacts in at least one block of pixels are positioned according to one contact pattern while the contacts in one or more other blocks are positioned according to a different contact pattern. The different contact patterns reduce or eliminate visible patterns in the contact locations.

Abstract: The present invention provides a solar cell module. The solar cell module includes a floodlight panel with a light transmission property; solar cells each of which has a light-receiving surface with electrode pads and a non-light-receiving surface opposite to the light-receiving surface, the solar cells being adhered to the floodlight panel so that the light-receiving surface faces the floodlight panel; and a conductive bonding film which is interposed between the floodlight panel and the solar cells and bonds the floodlight panel to the solar cells, wherein the conductive bonding film is used to electrically connect the electrode pads of the solar cells adjacent to one another.

Abstract: Certain embodiments provide a method for producing a solid-state imaging device including the steps of forming an interconnection layer, forming a passivation film, forming a resist layer, forming a plurality of protruding portions and an opening, and forming an electrode pad. In the step of forming the interconnection layer, the interconnection layer is formed on the surface of the semiconductor substrate having a photodiode. In the step of forming the resist layer, the resist layer is formed on the passivation film such that the resist layer has a plurality of first openings above the photodiode and has a second opening above the interconnection of the interconnection layer. In the step of forming the plurality of protruding portions and the opening, the plurality of protruding portions and the opening are formed by etching the passivation film via the resist layer.

Abstract: Photovoltaic modules may include multiple flexible thin film photovoltaic cells electrically connected in series, and laminated to a substantially transparent top sheet having a conductive grid pattern facing the cells. Methods of manufacturing photovoltaic modules including integrated multi-cell interconnections are provided. Methods may include steps of coordinating, integrating, and registering multiple rolls of substrates in continuous processes.

Abstract: An image sensing device and packaging method thereof is disclosed. The packaging method includes the steps of a) providing an image sensing module, having a light-receiving region exposed, on a first substrate; b) forming a plurality of first contacts around the light-receiving region on the image sensing module; c) providing a second substrate, having a plurality of second contacts corresponding to the plurality of first contacts and an opening for allowing the light-receiving region to be exposed while the second substrate is placed over the image sensing module, the plurality of second contacts being disposed around the opening; d) connecting the plurality of first contacts and the plurality of second contacts; and e) disposing a transparent lid above the light-receiving region, on a side of the second substrate which is opposite to the plurality of second contacts.

Abstract: An image sensor may include a first substrate having circuitry including wires and a silicon layer formed on and/or over the first substrate to selectively contact the wires. The image sensor may include photodiodes bonded to the first substrate while contacting the silicon layer and electrically connected to the wires. Each unit pixel may be implemented having complicated circuitry without a reduction in photosensitivity. Additional on-chip circuitry may also be implanted in the design.

Abstract: An image sensor according to embodiments may include a semiconductor substrate, photodiodes disposed over the semiconductor substrate, a dielectric layer formed over the photodiodes, a color filter layer formed over the dielectric layer, a planarization layer formed over the color filter layer, a phase change material formed over the planarization layer, and a plurality of microlenses formed over the planarization layer, wherein the phase change material is positioned in the microlens. Further, a method for manufacturing an image sensor according to embodiments may include forming a dielectric layer over a semiconductor substrate with a plurality of photodiodes, sequentially forming a color filter layer and a planarization layer over the dielectric layer, forming a phase change material over the planarization layer, forming a patterned phase change material by partially etching the phase change material, and forming microlenses over the planarization layer and the phase change material.

Abstract: Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may be a multi junction solar cell. The optoelectronic device may have a bi-layer electrical interconnect that is physically and electrically connected to sidewalls of the array of nanostructures. The optoelectronic device may be operated as a multi junction solar cell, wherein each junction is associated with one portion of the device. The bi-layer electrical interconnect allows current to pass from one portion to the next. Thus, the bi-layer electrical interconnect may serve as a replacement for a tunnel junction, which is used in some conventional multi junction solar cells.

Abstract: Provided is a solar cell module in which a stress of a solar cell string is relieved. A solar cell module includes a plurality of solar cell elements, each including a light receiving surface and a back surface positioned on a back side of the light receiving surface, and a plurality of conductor wires, each connecting one of the solar cell elements to any of the solar cell elements which is adjacent thereto and including connecting portions to be connected to one surface of one of the solar cell elements, wherein the plurality of solar cell elements is protruded toward the light receiving surface side in a perpendicular section to a longitudinal direction of the connecting portions.

Abstract: To provide a semiconductor device which can detect low illuminance. A photoelectric conversion element, a diode-connected first transistor, and a second transistor are included. A gate of the first transistor is electrically connected to a gate of the second transistor. One of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor through the photoelectric conversion element. The other of the source and the drain of the first transistor is electrically connected to the other of the source and the drain of the second transistor. By using transistors which have different threshold voltages for the first transistor and the second transistor, a semiconductor device which can perform detecting of low illuminance can be obtained.

Abstract: A semiconductor imager device is arranged for receiving a series of charge packets. It comprises a charge-to-voltage conversion circuit for receiving the charge packets on a reception capacitance and has an interconnected arrangement of a floating diffusion, a first reset gate, a reset drain and a source follower for readout. In particular, the device has a series arrangement of at least the first reset gate as a proximate reset gate and furthermore a distal reset gate, wherein in a high-gain configuration the proximate reset gate is cyclically controlled and the distal reset gate is continuously on, thus limiting the reception capacitance to a relatively low value. Alternatively, in a low-gain configuration the proximate reset gate is continuously on, thus extending the capacitance to a relatively high value and the distal reset gate replaces the proximate reset gate as being cyclically controlled for conversion of the series of charge packets.

Abstract: Microbolometer pixel structures including membrane material in a current path between at least two spaced electrodes, the membrane material having multiple openings defined in the current path that are configured such that substantially the entire volume of electrically conductive membrane material in at least a portion of the current path contributes to conduction of current between the electrical contacts.

Abstract: A packaging structure and process of solar cell is disclosed. The packaging structure of solar cell comprises two conductive films and two surface electrodes disposed on a photovoltaic cell (PV cell), wherein two conductive films are respectively electrically coupled with the surface electrodes via a plurality of solder balls.

Abstract: To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element.

Abstract: A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained.

Abstract: Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes a semiconductor substrate formed on a first surface thereof with a readout circuitry and a photodiode area; a metal interconnection layer formed on the first surface; a connection via metal extending from the first surface to a second surface of the semiconductor substrate, the connection via metal having a projection part projecting from the second surface; an insulating layer formed on the first surface of the semiconductor substrate to expose the projection part while surrounding a portion of a lateral side of the projection part; and a metal pad formed on the insulating layer such that the metal pad covers the projection part, thereby shortening an optical path to reduce light loss and improve image sensitivity.

Abstract: A sensor is provided. The sensor includes semiconductor layer; a photodiode, an impurity-doped polycrystalline silicon layer; and a gate electrode. The photodiode is formed in the semiconductor layer. The impurity-doped polycrystalline silicon layer is formed above the semiconductor layer. The gate electrode applies a gate voltage to the polycrystalline silicon layer. A wiring layer is provided on a first surface of the semiconductor layer and light is incident on a second surface thereof.

Abstract: Example embodiments are directed to X-ray detectors including double photoconductors. According to example embodiments, the X-ray detector includes a first photoconductor on which X-rays are incident, and a second photoconductor on which X-rays transmitted through the first photoconductor are incident. The first photoconductor and the second photoconductor include a tandem structure. The first photoconductor is formed of silicon and absorbs X-rays in a low energy band, and the second photoconductor is formed of a material that absorbs X-rays in an energy band higher than the low energy band of the X-rays absorbed by silicon.