For Filtering Or Shielding Light (e.g., Multicolor Filter For Photodetector) (epo) Patents (Class 257/E31.121)
  • Patent number: 10347675
    Abstract: An image sensor includes a color filter array and a light receiving element. The color filter array includes plural repeating unit cells, and at least one of the unit cells includes at least a yellow filter, at least one green filter, and at least one blue filter. The yellow filter is configured to transmit a green component and a red component of incident light. The green filter is configured to transmit the green component of the incident light. The blue filter is configured to transmit a blue component of the incident light. Each of the unit cells does not comprise a red filter configured to transmit the red component of the incident light. The light receiving element is configured to convert the incident light transmitted by the color filter array into electric signals.
    Type: Grant
    Filed: May 16, 2017
    Date of Patent: July 9, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Chieh Chiang, Keng-Yu Chou, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto
  • Patent number: 10349015
    Abstract: Some embodiments provide an image sensor color filter array pattern that mitigates and/or minimizes the impact of optical and carrier crosstalk on color reproduction accuracy and/or signal-to-noise, the color filter array comprising a plurality of kernels, wherein each kernel has an identical configuration of color filter elements comprising primary color filter elements corresponding to at least three respective different primary colors, and a plurality of secondary color filter elements. A respective one of the secondary color filter elements is disposed as a nearest neighbor to and between every pair of primary color filter elements of different colors in the kernel, with the respective secondary color filter element representing a secondary color that is a combination of the different colors of the primary color filter elements that are nearest neighbors to the respective secondary color filter element.
    Type: Grant
    Filed: December 1, 2015
    Date of Patent: July 9, 2019
    Assignee: TRUSTEES OF DARTMOUTH COLLEGE
    Inventors: Eric R. Fossum, Leo Anzagira
  • Patent number: 10302496
    Abstract: A method and apparatus for determining a color and brightness of an LED, when the LED is biased with a current pulse. The apparatus includes a sensor having a plurality of filters and an output probe connected to the sensor, the output probe providing a color output and a brightness output in a single signal. The sensor may further include an input probe connected to the sensor providing power and a ground probe connected to the sensor providing a grounded connection to the sensor. The plurality of filters in the sensor are preferably configured in a matrix array of color receptors having different colors. The method of this invention utilizes pulsing/dynamic sampling to determine a frequency and/or a brightness of the LED output.
    Type: Grant
    Filed: February 9, 2017
    Date of Patent: May 28, 2019
    Assignee: NASA SOLUTIONS, LLC
    Inventor: Denis Corrochano
  • Patent number: 9829469
    Abstract: The present invention relates to a technology for measuring a nonlinear parameter of an object to be measured, and more particularly, to an apparatus and method for measuring a nonlinear parameter of an object to be measured.
    Type: Grant
    Filed: November 4, 2013
    Date of Patent: November 28, 2017
    Assignee: Korea Research Institute of Standards and Science
    Inventors: Dae Cheol Seo, Seung Hyun Cho, Choon Su Park, Seung Seok Lee, Young Min Seong
  • Patent number: 9720150
    Abstract: A color-film substrate and a liquid crystal device are disclosed. The color-film includes a substrate body and a color filter layer on the substrate body. The color filter layer includes duplicated color filter elements arranged in a sequence, and the color filter layer includes a first display area and a second display area arranged in a rim of the first display area. A thickness of the color filter elements of the second display area is larger than a thickness of the photo-resistor of the first display area such that a transmission rate of the display panel corresponding to the second display area is smaller than the transmission rate of the display panel corresponding to the first display area. In this way, the transmission rate of edges of the display panel is reduced and the light leakage problem can be overcome such that the uniformity of the brightness is enhanced.
    Type: Grant
    Filed: May 22, 2015
    Date of Patent: August 1, 2017
    Assignee: Wuhan China Star Optoelectronics Technology Co., Ltd
    Inventors: Haiyan Sun, De-Jiun Li, Yuejun Tang
  • Patent number: 9378686
    Abstract: This disclosure provides systems, methods, and apparatus for providing pixel circuits for controlling the state of operation of light modulators in a display device. The state of operation of the light modulator can be controlled by the pixel circuit based on a data voltage stored in a data storage element of the pixel circuit. The pixel circuit includes an actuation circuit for providing an actuation voltage to the light modulator and a feedback circuit for providing a positive feedback voltage from an output node of the actuation circuit to an input node of the actuation circuit. In some implementations, the feedback circuit includes the data storage element connected between the input node and the output node.
    Type: Grant
    Filed: May 1, 2014
    Date of Patent: June 28, 2016
    Assignee: Pixtronix, Inc.
    Inventor: Ilias Pappas
  • Patent number: 9024405
    Abstract: A solid-state image sensor including an effective pixel portion in which a plurality of pixels including photodiodes formed on a semiconductor substrate are arranged, and a peripheral portion arranged around the effective pixel portion, includes a plurality of metal wiring layers arranged above the semiconductor substrate, and a planarizing film covering a patterned metal wiring layer that is a top layer among the plurality of metal wiring layers, wherein in the effective pixel portion, the plurality of metal wiring layers have openings configured to guide light to the photodiodes, and in the peripheral portion, an opening is provided in the top layer, and at least one metal wiring layer between the top layer and the semiconductor substrate has a pattern which blocks light incident on the photodiodes via the opening in the top layer.
    Type: Grant
    Filed: February 24, 2011
    Date of Patent: May 5, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventor: Takeshi Aoki
  • Patent number: 8946797
    Abstract: There is provided a solid-state imaging device including a sensor substrate having a sensor-side semiconductor layer including a pixel region in which a photoelectric conversion section is provided and a sensor-side wiring layer provided on an opposite surface side from a light receiving surface of the sensor-side semiconductor layer, a circuit substrate having a circuit-side semiconductor layer and a circuit-side wiring layer and provided on a side of the sensor-side wiring layer of the sensor substrate, a connection unit region in which a connection section is provided, the connection section having a first through electrode, a second through electrode, and a connection electrode connecting the first through electrode and the second through electrode, and an insulating layer having a step portion which has the connection electrode embedded therein and has a film thickness that gradually decreases from the connection unit region to the pixel region.
    Type: Grant
    Filed: April 1, 2013
    Date of Patent: February 3, 2015
    Assignee: Sony Corporation
    Inventors: Kyohei Mizuta, Osamu Oka, Kaoru Koike, Nobutoshi Fujii, Hideki Kobayashi, Hirotaka Yoshioka
  • Patent number: 8946847
    Abstract: A backside illuminated image sensor includes a substrate with a substrate depth, where the substrate includes a pixel region and a peripheral region. The substrate further includes a front surface and a back surface. The backside illuminated image sensor includes a first isolation structure formed in the pixel region of the substrate, where a bottom of the first isolation structure is exposed at the back surface of the substrate. The backside illuminated image sensor includes a second isolation structure formed in the peripheral region of the substrate, where the second isolation structure has a depth less than a depth of the first isolation structure. The backside illuminated image sensor includes an implant region adjacent to at least a portion of sidewalls of each isolation structure in the pixel region.
    Type: Grant
    Filed: February 4, 2014
    Date of Patent: February 3, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuan-Chieh Huang, Chih-Jen Wu, Chen-Ming Huang, Dun-Nian Yaung, An-Chun Tu
  • Patent number: 8941158
    Abstract: Certain embodiments provide a solid-state imaging device including: a semiconductor substrate of a first conductivity type having a first face and a second face that is the opposite side from the first face; a plurality of pixels provided on the first face of the semiconductor substrate, each of the pixels including a semiconductor region of a second conductivity type that converts incident light into signal charges, and stores the signal charges; a readout circuit provided on the second face of the semiconductor substrate to read the signal charges stored in the pixels; an ultrafine metal structure placed at intervals on a face on a side of the semiconductor region, the light being incident on the face; and an insulating layer provided between the ultrafine metal structure and the semiconductor region.
    Type: Grant
    Filed: September 3, 2010
    Date of Patent: January 27, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yoshinori Iida, Eishi Tsutsumi, Akira Fujimoto, Koji Asakawa, Hisayo Momose, Koichi Kokubun, Nobuyuki Momo
  • Patent number: 8933530
    Abstract: An image sensor includes a substrate having a front side and a back side, an insulating structure containing circuits on the front side of the substrate, contact holes extending through the substrate to the circuits, respectively, and a plurality of pads disposed on the backside of the substrate, electrically connected to the circuits along conductive paths extending through the contact holes, and located directly over the circuits, respectively. The image sensor is fabricated by a process in which a conductive layer is formed on the back side of the substrate and patterned to form the pads directly over the circuits.
    Type: Grant
    Filed: November 8, 2012
    Date of Patent: January 13, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-Ho Kim, Young-Hoon Park
  • Patent number: 8890271
    Abstract: Various embodiments for etching of silicon nitride (SixNy) lightpipes, waveguides and pillars, fabricating photodiode elements, and integration of the silicon nitride elements with photodiode elements are described. The results show that the quantum efficiency of the photodetectors (PDs) can be increased using vertical silicon nitride vertical waveguides.
    Type: Grant
    Filed: December 13, 2010
    Date of Patent: November 18, 2014
    Assignees: Zena Technologies, Inc., President and Fellows of Harvard College
    Inventors: Turgut Tut, Peter Duane, Young-June Yu, Winnie N. Ye, Munib Wober, Kenneth B. Crozier
  • Patent number: 8872298
    Abstract: A unit pixel array of an image sensor includes a semiconductor substrate having a plurality of photodiodes, an interlayer insulation layer on a front-side of the semiconductor substrate, and a plurality of micro lenses on a back-side of the semiconductor substrate. The unit pixel array of the image sensor further includes a wavelength adjustment film portion between each of the micro lenses and the back-side of the semiconductor substrate such that a plurality of wavelength adjustment film portions correspond with the plurality of micro lenses.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: October 28, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-Chak Ahn, Kyung-Ho Lee
  • Patent number: 8853758
    Abstract: There is provided a solid-state imaging device including plural pixel regions, each including a pixel having a photoelectric conversion unit, a color filter, and a microlens that condenses the incident light to the photoelectric conversion unit; a first light shielding portion that has a first end face at the side of the microlens, and a second end face opposite to the first end face, and that is formed at each side portion of each pixel region of the plurality of the pixel regions; and a second light shielding portion that has a first end face at the side of the microlens, and a second end face opposite to the first end face, and that is formed at each corner portion of the pixel region, in which a distance from a surface of the pixel to the first end face is short compared to the first light shielding portion.
    Type: Grant
    Filed: March 6, 2012
    Date of Patent: October 7, 2014
    Assignee: Sony Corporation
    Inventor: Yoichi Ootsuka
  • Patent number: 8791537
    Abstract: Disclosed is a flexible radiation detector including a substrate, a switching device on the substrate, an energy conversion layer on the switching device, a top electrode layer on the energy conversion layer, a first phosphor layer on the top electrode layer, and a second phosphor layer under the substrate.
    Type: Grant
    Filed: April 26, 2012
    Date of Patent: July 29, 2014
    Assignee: Industrial Technology Research Institute
    Inventors: Issac Wing-Tak Chan, Chao-Chiun Liang, Heng-Yin Chen, Ming-Hua Yeh
  • Patent number: 8779541
    Abstract: A solid-state imaging device including a plurality of pixels arranged two-dimensionally, wherein each of the pixels has at least a planarizing film formed on the upper side of a photoelectric conversion element, a filter formed on the upper side of the planarizing film, and a microlens formed on the upper side of the filter. The filter of some of the pixels is a color filter permitting transmission therethrough of light of a predetermined color component, whereas the filter of other pixels is a white filter permitting transmission therethrough of light in the whole visible spectral range. The refractive indices of the white filter, the microlens and the planarizing film have the following relationship: (Refractive index of white filter)?(Refractive index of microlens)>(Refractive index of planarizing film).
    Type: Grant
    Filed: November 16, 2012
    Date of Patent: July 15, 2014
    Assignee: Sony Corporation
    Inventors: Sintaro Nakajiki, Yukihiro Sayama, Yuichi Seki, Masanori Harasawa, Yoshinori Toumiya
  • Patent number: 8766291
    Abstract: The present invention relates to efficient organic light emitting devices (OLEDs). The devices employ three emissive sub-elements, typically emitting red, green and blue, to sufficiently cover the visible spectrum. Thus, the devices may be white-emitting OLEDs, or WOLEDs. Each sub-element comprises at least one organic layer which is an emissive layer—i.e., the layer is capable of emitting light when a voltage is applied across the stacked device. The sub-elements are vertically stacked and are separated by charge generating layers. The charge-generating layers are layers that inject charge carriers into the adjacent layer(s) but do not have a direct external connection.
    Type: Grant
    Filed: October 28, 2009
    Date of Patent: July 1, 2014
    Assignee: The Regents of the University of Michigan
    Inventors: Stephen Forrest, Xiangfei Qi, Michael Slootsky
  • Patent number: 8749006
    Abstract: An improved image sensor, e.g., CCD, CID, CMOS. The image sensor includes a substrate, e.g., silicon wafer. The sensor also includes a plurality of photo diode regions, where each of the photo diode regions is spatially disposed on the substrate. The sensor has an interlayer dielectric layer overlying the plurality of photo diode regions and a shielding layer formed overlying the interlayer dielectric layer. A silicon dioxide bearing material is overlying the shielding layer. A plurality of lens structures are formed on the silicon dioxide bearing material. The sensor also has a color filter layer overlying the lens structures and a plurality of second lens structures overlying the color filter layer according to a preferred embodiment.
    Type: Grant
    Filed: December 7, 2007
    Date of Patent: June 10, 2014
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Herb Huang, Mieno Fumitake
  • Patent number: 8736007
    Abstract: A method and device is disclosed for reducing noise in CMOS image sensors. An improved CMOS image sensor includes a light sensing structure surrounded by a support feature section. An active section of the light sensing structure is covered by no more than optically transparent materials. A light blocking portion includes an opaque layer or a black light filter layer in conjunction with an opaque layer, covering the support feature section. The light blocking portion may also cover a peripheral portion of the light sensing structure. The method for forming the CMOS image sensors includes using film patterning and etching processes to selectively form the opaque layer and the black light filter layer where the light blocking portion is desired, but not over the active section. The method also provides for forming microlenses over the photosensors in the active section.
    Type: Grant
    Filed: September 21, 2012
    Date of Patent: May 27, 2014
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tien-Chi Wu, Tsung-Yi Lin
  • Patent number: 8710534
    Abstract: A semiconductor light-receiving device includes two lenses; and a concave region, a height of the sidewall being higher than a top of the lenses, a distance between a position H and a lower edge of the sidewall vertical to a line segment C1 being grater than following condition: {(r+L)2?(W/2)2}1/2 where: C1 is a line segment connecting centers of the lenses; H is a midpoint of the C1; r is a radius of the lenses; W is an interval between the centers; and C2 is a lines passing through the centers in a direction vertical to the C1, wherein: the lower edge of the concave portion in an outer side of a region between the C2 is concentrically formed so as to have a distance of (r+L) from the center of the lenses; and W is following condition: W<2 (r+L).
    Type: Grant
    Filed: January 22, 2013
    Date of Patent: April 29, 2014
    Assignee: Sumitomo Electric Device Innovations, Inc.
    Inventor: Yuji Koyama
  • Patent number: 8669631
    Abstract: A solid state imaging device according to one embodiment of the present invention includes a substrate with a solid state imaging element, a first impurity layer, a plurality of external electrodes, and a translucent substrate. The first impurity layer is formed on a back surface side of the substrate, and forms a pn junction with the substrate. The plurality of external electrodes is formed on the back surface of the substrate and is electrically connected to the solid state imaging element. The translucent substrate is fixed to the substrate.
    Type: Grant
    Filed: March 16, 2011
    Date of Patent: March 11, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Yoshiteru Koseki
  • Patent number: 8669632
    Abstract: A solid-state imaging device and a method for manufacturing the same are provided. The solid-state imaging device includes a structure that provides a high sensitivity and high resolution without variations in spectral sensitivity and without halation of colors, and prevents light from penetrating into an adjacent pixel portion. A plurality of photodiodes are formed inside a semiconductor substrate. A wiring layer includes a laminated structure of an insulating film and a wire and is formed on the semiconductor substrate. A plurality of color filters are formed individually in a manner corresponding to the plurality of photodiodes above the wiring layer. A planarized film and a microlens are sequentially laminated on each of the color filters. In the solid-state imaging device, each of the color filters has an refraction index higher than that of the planarized film and has, in a Z-axis direction, an upper surface in a concave shape.
    Type: Grant
    Filed: April 17, 2012
    Date of Patent: March 11, 2014
    Assignee: Panasonic Corporation
    Inventors: Tetsuya Nakamura, Motonari Katsuno, Masayuki Takase, Masao Kataoka
  • Patent number: 8664031
    Abstract: A semiconductor device manufacturing method including a process of forming a silicon oxide film by thermally oxidizing silicon in the atmosphere of oxygen gas or in the atmosphere of mixed gas of oxygen and hydrogen at a temperature of 800° C. or more in the state in which at least the silicon surface serving as a light-receiving portion of a photodiode is exposed, and a process of depositing a silicon nitride film on the silicon oxide film. At least the silicon oxide film and the silicon nitride film are finally left on the surface of the photodiode as an antireflection film.
    Type: Grant
    Filed: November 17, 2008
    Date of Patent: March 4, 2014
    Assignee: Sony Corporation
    Inventor: Tomotaka Fujisawa
  • Patent number: 8664673
    Abstract: A process for forming a pixel circuit is disclosed comprising: (a) providing a transparent support; (b) forming a multicolor mask having at least four different color patterns; (c) forming integrated electronic components of the pixel circuit having at least four layers of patterned functional material comprising a first conductor, a dielectric, a semiconductor, and a second conductor each layer of patterned functional material corresponding to the four different color patterns of the multicolor mask. The functional material is patterned using a photopattern corresponding to each color pattern.
    Type: Grant
    Filed: March 2, 2012
    Date of Patent: March 4, 2014
    Assignee: Eastman Kodak Company
    Inventors: Lyn M. Irving, David H. Levy, Lan B. Thai
  • Patent number: 8664739
    Abstract: In accordance with the invention, an improved image sensor includes an array of germanium photosensitive elements integrated with a silicon substrate and integrated with silicon readout circuits. The silicon transistors are formed first on a silicon substrate, using well known silicon wafer fabrication techniques. The germanium elements are subsequently formed overlying the silicon by epitaxial growth. The germanium elements are advantageously grown within surface openings of a dielectric cladding. Wafer fabrication techniques are applied to the elements to form isolated germanium photodiodes. Since temperatures needed for germanium processing are lower than those for silicon processing, the formation of the germanium devices need not affect the previously formed silicon devices. Insulating and metallic layers are then deposited and patterned to interconnect the silicon devices and to connect the germanium devices to the silicon circuits.
    Type: Grant
    Filed: May 26, 2011
    Date of Patent: March 4, 2014
    Assignee: Infrared Newco, Inc.
    Inventors: Clifford A. King, Conor S. Rafferty
  • Publication number: 20140034900
    Abstract: A wavelength converting material comprising a phosphate compound have a chemical formula of ABl-m-nPO4:Mm, Nn, wherein A comprises an alkali metal element, B comprises an alkaline earth metal element, M is a sensitizer comprising a rare-earth element, and N is an acceptor comprising a rare-earth element, wherein 0<m?0.3 and 0<n?0.3.
    Type: Application
    Filed: August 2, 2012
    Publication date: February 6, 2014
    Applicant: EPISTAR CORPORATION
    Inventors: Tzu-Chen Liu, Ru-Shi Liu
  • Publication number: 20140001588
    Abstract: Monolithic optical sensor devices, and methods for fabricating such devices, are described herein. In an embodiment, a semiconductor wafer substrate includes a plurality of photodetector (PD) regions. A wafer-level inorganic dielectric optical filter is deposited and thereby formed over at least a subset of the plurality of PD regions. One or more wafer-level organic color filter(s) is/are deposited and thereby formed on one or more selected portion(s) of the wafer-level inorganic dielectric optical filter that is/are over selected ones of the PD regions. For example, an organic red filter, an organic green filter and an organic blue filter can be over, respectively, portions of the wafer-level inorganic dielectric optical filter that are over first, second and third PD regions.
    Type: Application
    Filed: June 28, 2012
    Publication date: January 2, 2014
    Applicant: INTERSIL AMERICAS LLC
    Inventors: Michael I-Shan Sun, Francois Hebert, Kenneth C. Dyer, Eric S. Lee
  • Patent number: 8618622
    Abstract: Backlit detector for the detection of electromagnetic radiation around a predetermined wavelength, including a semiconductor absorption layer, formed above a transparent medium, capable of transmitting at least some of said radiation, and a mirror above the semiconductor layer, and placed between the mirror and the semiconductor layer, a periodic grating of metallic patterns, the mirror and the grating being included in a layer of material transparent to said radiation and formed on the semiconductor layer.
    Type: Grant
    Filed: December 13, 2011
    Date of Patent: December 31, 2013
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Roch Espiau De Lamaestre, Salim Boutami, Olivier Gravrand, Jérôme Le Perchec
  • Patent number: 8610152
    Abstract: A semiconductor device in which the damage such as cracks, chinks, or dents caused by external stress is reduced is provided. In addition, the yield of a semiconductor device having a small thickness is increased. The semiconductor device includes a light-transmitting substrate having a stepped side surface, the width of which in a portion above the step and closer to one surface is smaller than that in a portion below the step, a semiconductor element layer provided over the other surface of the light-transmitting substrate, and a stack of a first light-transmitting resin layer and a second light-transmitting resin layer, which covers the one surface and part of the side surface of the light-transmitting substrate. One of the first light-transmitting resin layer and the second light-transmitting resin layer has a chromatic color.
    Type: Grant
    Filed: November 29, 2012
    Date of Patent: December 17, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidekazu Takahashi, Daiki Yamada, Yohei Monma, Hiroki Adachi, Shunpei Yamazaki
  • Patent number: 8569782
    Abstract: An optoelectronic semiconductor component includes a housing main body and at least one optoelectronic semiconductor chip mounted on the housing main body. In operation, the optoelectronic semiconductor chip emits primary radiation including an ultraviolet radiation fraction. The semiconductor component also includes a filter medium that absorbs the ultraviolet radiation fraction and is located at least in part between the semiconductor chip and the housing main body and/or between the semiconductor chip and an optical component.
    Type: Grant
    Filed: May 12, 2010
    Date of Patent: October 29, 2013
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventor: Gertrud Kräuter
  • Patent number: 8569854
    Abstract: A semiconductor imaging instrument is disclosed, including a prescribed substrate, an imaging device array provided on the substrate and having plural semiconductor imaging devices and electrodes for outputting a signal charge upon photoelectric conversion of received light, and a color filter layer provided on the imaging device array, with an infrared light absorbing dye being contained in the color filter layer.
    Type: Grant
    Filed: January 10, 2012
    Date of Patent: October 29, 2013
    Assignee: Sony Corporation
    Inventor: Yoshinori Uchida
  • Patent number: 8558335
    Abstract: A solid-state imaging device includes a photoelectric conversion unit that is formed on a semiconductor substrate, a reading unit that reads signal charges of the photoelectric conversion unit, a gate insulating film and an electrode disposed thereon that constitute the reading unit, a light shielding film that covers the electrode, and an antireflection film that is formed on the photoelectric conversion unit and is constituted by films of four or more layers. The film of the lower layer of the antireflection film is also used as a stopper film during patterning, and a gap between the end of the light shielding film and the semiconductor substrate which is defined by interposing a plurality of films of the lower layer of the antireflection film is set so as to be smaller than the thickness of the gate insulating film.
    Type: Grant
    Filed: November 1, 2011
    Date of Patent: October 15, 2013
    Assignee: Sony Corporation
    Inventor: Mitsuhiro Nagano
  • Patent number: 8507963
    Abstract: A photoelectric conversion device in accordance with an aspect of the present invention includes a thin-film transistor formed on a substrate, and a photo diode electrically connected to the thin-film transistor, wherein the photo diode includes a lower electrode connected to a drain electrode of the thin-film transistor, a photoelectric conversion layer formed on the lower electrode, an upper electrode formed from a transparent conductive film on the photoelectric conversion layer, the upper electrode being formed so as to be contained within an upper surface of the photoelectric conversion layer as viewed from a top, and a protective film (compound layer or the like) formed so as to protect a part of an upper surface of the photoelectric conversion layer located outside the upper electrode.
    Type: Grant
    Filed: November 4, 2010
    Date of Patent: August 13, 2013
    Assignee: Mitsubishi Electric Corporation
    Inventor: Masami Hayashi
  • Patent number: 8508010
    Abstract: A method of manufacturing a solid-state imaging device is provided. The method includes: forming an insulating layer extending over an effective pixel region where a plurality of pixels each having a photoelectric conversion element is arranged and a peripheral area adjacent to the effective pixel region; forming an opening in the insulating layer located immediately above the photoelectric conversion element on the effective pixel region; forming a dummy opening in the insulating layer on the peripheral region; and forming a buried layer on the insulating layer to fill the opening and the dummy opening formed in the insulating layer.
    Type: Grant
    Filed: December 16, 2008
    Date of Patent: August 13, 2013
    Assignee: Sony Corporation
    Inventor: Shunsuke Maruyama
  • Patent number: 8508043
    Abstract: A topographical feature is formed proximate to a conductive bond pad that is used to couple a solder bump to a semiconductor die. The topographical feature is separated from the conductive bond pad by a gap. In one embodiment, the topographical feature is formed at a location that is slightly beyond the perimeter of the solder bump, wherein an edge of the bump is aligned vertically to coincide with the gap separating the conductive bond pad from the topographical feature. The topographical feature provides thickness enhancement of a non-conductive layer disposed over the semiconductor die and the conductive bond pad and stress buffering.
    Type: Grant
    Filed: November 16, 2011
    Date of Patent: August 13, 2013
    Assignee: International Business Machines Corporation
    Inventors: Timothy H. Daubenspeck, Jeffrey P. Gambino, Christopher D. Muzzy, David L. Questad, Wolfgang Sauter, Timothy D. Sullivan
  • Patent number: 8507308
    Abstract: A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors.
    Type: Grant
    Filed: September 24, 2011
    Date of Patent: August 13, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidekazu Takahashi, Daiki Yamada, Yohei Monma, Takahiro Iguchi, Hiroki Adachi, Shunpei Yamazaki
  • Patent number: 8492807
    Abstract: A tiltable micro-electro-mechanical (MEMS) system lens comprises a microscopic lens located on a front surface of a semiconductor-on-insulator (SOI) substrate and a semiconductor rim surrounding the periphery of the microscopic lens. Two horizontal semiconductor beams located at different heights are provided within a top semiconductor layer. The microscopic lens may be tilted by applying an electrical bias between the lens rim and one of the two semiconductor beams, thereby altering the path of an optical beam through the microscopic lens. An array of tiltable microscopic lenses may be employed to form a composite lens having a variable focal length may be formed. A design structure for such a tiltable MEMS lens is also provided.
    Type: Grant
    Filed: December 7, 2009
    Date of Patent: July 23, 2013
    Assignee: International Business Machines Corporation
    Inventors: John J. Ellis-Monaghan, Jeffrey P. Gambino, Kirk D. Peterson, Jed H. Rankin
  • Patent number: 8493481
    Abstract: A solid-state imaging device includes a plurality of pixels and a plurality of color filters. The plurality of pixels is formed in a semiconductor substrate in a two-dimensional array arrangement. Each of the pixels has a photoelectric conversion region. The plurality of color filters is stacked on each of the pixels. The photoelectric conversion regions have the same depth irrespective of colors of the color filters stacked on the pixels. The width of a shallow portion of each of the photoelectric conversion regions is differ from a width of the deep portion of each of the photoelectric regions depending on the colors of the color filters stacked on the pixels.
    Type: Grant
    Filed: September 1, 2010
    Date of Patent: July 23, 2013
    Assignee: Fujifilm Corporation
    Inventor: Shunsuke Tanaka
  • Publication number: 20130180587
    Abstract: Disclosed and claimed herein are methods of preparing colorant sensitized solar cells using pre-sensitized semiconductor particles, said particles are coated and thermally processed at temperatures that maintains the sensitivity of the colorant. The pre-sensitized particles are prepared in an aqueous or organic solvent colorant admixture. The solar cells may contain heat sensitive substrates as well as heat resistant substrates. Also disclosed and claimed are solar cells prepared from the disclosed and claimed pre-sensitized semiconductor particles as well as the colorant/particle dispersion.
    Type: Application
    Filed: January 17, 2012
    Publication date: July 18, 2013
    Inventors: John C. Warner, Michael S. Viola, Olga Barykina, Vineet Dua
  • Patent number: 8476622
    Abstract: Disclosed are an active matrix organic light emitting diode and a method for manufacturing the same. The active matrix organic light emitting diode includes: a substrate; a black matrix formed above a part of the substrate; at least one thin film transistor formed above the black matrix; a passivation film formed to entirely cover the at least one thin film transistor; a planarizing layer formed above the passivation film; a color filter formed above an upper part of the planarizing layer opposite to the position where the at least one thin film transistor is formed; and an organic light emitting diode formed above the color filter.
    Type: Grant
    Filed: January 4, 2012
    Date of Patent: July 2, 2013
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Sang Hee Park, Chi Sun Hwang, Byoung Gon Yu
  • Patent number: 8471311
    Abstract: An anti-reflective image sensor and method of fabrication are provided, the sensor including a substrate; first color sensing pixels disposed in the substrate; second color sensing pixels disposed in the substrate; third color sensing pixels disposed in the substrate; a first layer disposed directly on the first, second and third color sensing pixels; a second layer disposed directly on the first layer overlying the first, second and third color sensing pixels; and a third layer disposed directly on portions of the second layer overlying at least one of the first or second color sensing pixels, wherein the first layer has a first refractive index, the second layer has a second refractive index greater than the first refractive index, and the third layer has a third refractive index greater than the second refractive index.
    Type: Grant
    Filed: July 14, 2010
    Date of Patent: June 25, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong-Ho Lee, Sang-Il Jung
  • Publication number: 20130112256
    Abstract: A photovoltaic device operable to convert light to electricity, comprising a substrate, one or more structures essentially perpendicular to the substrate, and a wavelength-selective layer disposed on the substrate, wherein the structures comprise a crystalline semiconductor material.
    Type: Application
    Filed: November 3, 2011
    Publication date: May 9, 2013
    Inventors: Young-June YU, Munib WOBER
  • Publication number: 20130105928
    Abstract: A structure and method of manufacture is disclosed for a backside thinned imager that incorporates a conformal, Al2O3, low thermal budget, surface passivation. This passivation approach facilitates fabrication of backside thinned, backside illuminated, silicon image sensors with thick silicon absorber layer patterned with vertical trenches that are formed by etching the exposed back surface of a backside-thinned image sensor to control photo-carrier diffusion and optical crosstalk. A method of manufacture employing conformal, Al2O3, surface passivation approach is shown to provide high quantum efficiency and low dark current while meeting the thermal budget constraints of a finished standard foundry-produced CMOS imager.
    Type: Application
    Filed: September 14, 2012
    Publication date: May 2, 2013
    Applicant: INTEVAC, INC.
    Inventors: Kenneth A. COSTELLO, Edward YIN, Michael Wayne PELCZYNSKI, Verle W. AEBI
  • Publication number: 20130105925
    Abstract: An integrated die-level camera system and method of making the camera system include a first die-level camera formed at least partially in a die. A second die level camera is also formed at least partially in the die. Baffling is formed to block stray light between the first and second die-level cameras.
    Type: Application
    Filed: October 26, 2011
    Publication date: May 2, 2013
    Inventors: Dennis Gallagher, Adam Greengard, Paulo E.X. Silveira, Chris Linnen, Vladislav Chumachenko, Jungwon Aldinger
  • Patent number: 8431429
    Abstract: A method of fabricating a backside illuminated imaging sensor that includes a device layer, a metal stack, and an opening is disclosed. The device layer has an imaging array formed in a front side of the device layer, where the imaging array is adapted to receive light from a back side of the device layer. The metal stack is coupled to the front side of the device layer and includes at least one metal interconnect layer having a metal pad. The opening extends from the back side of the device layer to the metal pad to expose the metal pad for wire bonding. The method includes depositing a film on the back side of the device layer and within the opening, then etching the film to form a frame within the opening to structurally reinforce the metal pad.
    Type: Grant
    Filed: July 20, 2012
    Date of Patent: April 30, 2013
    Assignee: OmniVision Technologies, Inc.
    Inventors: Hsin-Chih Tai, Howard E. Rhodes, Duli Mao, Vincent Venezia, Yin Qian
  • Patent number: 8431977
    Abstract: A semiconductor chip includes a silicon substrate, a transistor in or on a bottom side surface of the substrate, a metallization structure under a bottom side surface of the substrate, a dielectric layer under the substrate and between a first and second metal layers of the metallization structure, a passivation layer under the metallization structure and the dielectric layer, where an opening in the passivation layer may be under a contact point of the metallization structure, a polymer layer under the passivation layer, a metal post under the passivation layer and in the polymer layer, where the polymer layer may not cover a bottom surface of the metal post, a metal bump connected with the bottom surface of the metal post, a micro-lense over the top side surface of the substrate, and a glass substrate over the micro-lense and over the top side surface of the substrate.
    Type: Grant
    Filed: June 10, 2011
    Date of Patent: April 30, 2013
    Assignee: Megica Corporation
    Inventor: Ping-Jung Yang
  • Patent number: 8421176
    Abstract: A solid-state image pickup device relating to the present invention has a specific gap in a part of a lattice-shaped light blocking film pattern or wiring pattern having an opening enclosing a light reception region. Peripheral circuits and wiring layers on a pixel may be used as the light blocking film. In such a case, when multiple wiring layers are used as the light blocking film, layouts of a second and subsequent wiring layers is determined according to the layout of the first wiring layer above the light reception region. The specific gap is created in a part of the wiring enclosing the light reception region.
    Type: Grant
    Filed: September 15, 2009
    Date of Patent: April 16, 2013
    Assignee: Panasonic Corporation
    Inventors: Ken Mimuro, Jun Jisaki
  • Patent number: 8405063
    Abstract: A component including a substrate, at least one layer including a color conversion material including quantum dots disposed over the substrate, and a layer including a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material including quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein.
    Type: Grant
    Filed: January 20, 2010
    Date of Patent: March 26, 2013
    Assignee: QD Vision, Inc.
    Inventors: Peter T. Kazlas, Seth Coe-Sullivan
  • Patent number: 8405182
    Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the first side. The substrate has a pixel region and a periphery region. The image sensor device includes a plurality of radiation-sensing regions disposed in the pixel region of the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes a reference pixel disposed in the periphery region. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers. The image sensor device includes a film formed over the back side of the substrate. The film causes the substrate to experience a tensile stress. The image sensor device includes a radiation-blocking device disposed over the film.
    Type: Grant
    Filed: May 2, 2011
    Date of Patent: March 26, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Keng-Yu Chou, Dun-Nian Yaung, Jen-Cheng Liu, Pao-Tung Cheng, Wen-De Wang, Chun-Chieh Chuang, Min-Feng Kao
  • Patent number: RE45493
    Abstract: An image sensor system using offset analog to digital converters. The analog to digital converters require a plurality of clock cycles to carry out the actual conversion. These conversions are offset in time from one another, so that at each clock cycle, new data is available. A CMOS image sensor converts successive analog signals, representing at least a portion of an image, into successive digital signals using an analog to digital circuit block. Multiple clock cycles may be used by the circuit block to fully convert an analog signal into a corresponding digital signal. The conversion of one analog signal into a corresponding digital signal by the circuit block may be offset in time and partially overlapping with the conversion of a successive analog signal into its corresponding successive digital signal by the circuit block.
    Type: Grant
    Filed: June 25, 2012
    Date of Patent: April 28, 2015
    Assignee: Round Rock Research, LLC
    Inventors: Eric R. Fossum, Sandor L. Barna