For Shielding Light (e.g., Light-blocking Layer, Cold Shield For Infrared Detector) (epo) Patents (Class 257/E31.122)
  • Patent number: 10599014
    Abstract: The present invention relates to a camera module, comprising: a lens barrel including a body part, and an extension part extending outwardly from the body part; a front body including a through hole into which the body part is inserted, and a placing part on the top of which the extension part is disposed; and an adhesive disposed between the extension part and the placing part, wherein a concave-convex part may be formed on the placing part. The present invention has an effect of enhancing adhesive force between the lens barrel and the front body, thereby maintaining airtightness of an inner space and improving reliability and stability.
    Type: Grant
    Filed: March 8, 2019
    Date of Patent: March 24, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Je Kyung Park, Myoung Jin An
  • Patent number: 10268107
    Abstract: The present invention relates to a camera module, comprising: a lens barrel including a body part, and an extension part extending outwardly from the body part; a front body including a through hole into which the body part is inserted, and a placing part on the top of which the extension part is disposed; and an adhesive disposed between the extension part and the placing part, wherein a concave-convex part may be formed on the placing part. The present invention has an effect of enhancing adhesive force between the lens barrel and the front body, thereby maintaining airtightness of an inner space and improving reliability and stability.
    Type: Grant
    Filed: July 25, 2016
    Date of Patent: April 23, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Je Kyung Park, Myoung Jin An
  • Patent number: 9874693
    Abstract: A semiconductor structure can include an active device FET region having a FET and a photonics region having a photonic device including a waveguide. A semiconductor structure can include an active device FET region having a FET and a trench isolation region having a photonic device that includes a waveguide. A method can include forming a FET at an active device FET region of a semiconductor structure. A method can include forming a photonic device at a trench isolation region of a semiconductor structure.
    Type: Grant
    Filed: June 10, 2015
    Date of Patent: January 23, 2018
    Assignee: The Research Foundation for the State University of New York
    Inventors: Christopher Baiocco, Douglas Coolbaugh, Gerald Leake
  • Patent number: 9837464
    Abstract: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.
    Type: Grant
    Filed: February 20, 2017
    Date of Patent: December 5, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Keng-Yu Chou, Shuang-Ji Tsai, Min-Feng Kao
  • Patent number: 9691809
    Abstract: Disclosed is a method of fabricating an image sensor device, such as a BSI image sensor, and more particularly, a method of forming a dielectric film in a radiation-absorption region without using a conventional plasma etching causing roughness on the surface and non-uniformity within a die and a wafer. The method includes providing layers comprising a substrate having radiation sensors adjacent its front surface, an anti-reflective layer formed over the back surface of the substrate, a sacrificial dielectric layer formed over the anti-reflective layer, and a conductive layer formed over the sacrificial dielectric layer in a radiation-blocking region. The method further includes removing the sacrificial dielectric layer in the radiation-absorption region completely by a highly selective etching process and forming a dielectric film on the anti-reflective layer by deposition such as CVD or PVD while precisely controlling the thickness.
    Type: Grant
    Filed: June 28, 2013
    Date of Patent: June 27, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jeng Chang Her, Hung Jui Chang, Li Te Hsu, Chung-Bin Tseng
  • Patent number: 9577014
    Abstract: A manufacturing method of an organic electroluminescence display device including a device substrate provided with a plurality of pixel electrodes which have a gap part therebetween, a common electrode disposed opposite to the plurality of pixel electrodes, a light emitting layer provided over the plurality of pixel electrodes, and a bank layer provided in the gap part of the plurality of pixel electrodes, the method comprising forming a cover layer including a concave region to fit into a convex shaped part of the bank layer at a support substrate, forming a color filter layer facing the pixel electrode to the concave region, disposing a surface of the color filter layer on the device substrate so that the concave region fits into a convex shaped part, and attaching the cover layer and the color filter layer on the device substrate by peeling the cover layer from the support substrate.
    Type: Grant
    Filed: March 13, 2015
    Date of Patent: February 21, 2017
    Assignee: Japan Display Inc.
    Inventors: Yoshinori Ishii, Toshihiro Sato
  • Patent number: 9024249
    Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.
    Type: Grant
    Filed: May 15, 2014
    Date of Patent: May 5, 2015
    Assignee: Sony Corporation
    Inventors: Atsushi Kawashima, Katsunori Hiramatsu, Yasufumi Miyoshi
  • Patent number: 9024405
    Abstract: A solid-state image sensor including an effective pixel portion in which a plurality of pixels including photodiodes formed on a semiconductor substrate are arranged, and a peripheral portion arranged around the effective pixel portion, includes a plurality of metal wiring layers arranged above the semiconductor substrate, and a planarizing film covering a patterned metal wiring layer that is a top layer among the plurality of metal wiring layers, wherein in the effective pixel portion, the plurality of metal wiring layers have openings configured to guide light to the photodiodes, and in the peripheral portion, an opening is provided in the top layer, and at least one metal wiring layer between the top layer and the semiconductor substrate has a pattern which blocks light incident on the photodiodes via the opening in the top layer.
    Type: Grant
    Filed: February 24, 2011
    Date of Patent: May 5, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventor: Takeshi Aoki
  • Patent number: 8969991
    Abstract: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.
    Type: Grant
    Filed: February 11, 2014
    Date of Patent: March 3, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Keng-Yu Chou, Shuang-Ji Tsai, Min-Feng Kao
  • Patent number: 8941202
    Abstract: A method for forming an image sensor device is provided. First, a lens is provided and a first sacrificial element is formed thereon. An electromagnetic interference layer is formed on the lens and the first sacrificial element, and the first sacrificial element and electromagnetic interference layer thereon are removed to form an electromagnetic interference pattern having an opening exposing a selected portion of the lens. A second sacrificial element is formed in the opening to cover a center region of the selected portion of the lens. A peripheral region of the selected portion of the lens remains exposed. A light-shielding layer is formed on the electromagnetic interference pattern, second sacrificial element, and peripheral region of the selected portion of the lens. The second sacrificial element and light-shielding pattern are removed to expose the center region of the selected portion of the lens as a light transmitting region.
    Type: Grant
    Filed: September 5, 2013
    Date of Patent: January 27, 2015
    Assignees: OmniVision Technologies, Inc., VisEra Technologies Company Limited
    Inventors: Ming-Kai Liu, Tzu-Wei Huang, Jui-Hung Chang, Chia-Hui Huang, Teng-Sheng Chen
  • Patent number: 8928103
    Abstract: A solid-state imaging element including a semiconductor substrate that has a light reception portion performing a photoelectric conversion of an incident light; an oxide layer that is formed on a surface of the semiconductor substrate; a light shielding layer that is formed on an upper layer further than the oxide layer via an adhesion layer; and an oxygen supply layer that is disposed between the oxide layer and the adhesion layer and is formed of a material which shows an oxidation enthalpy smaller than that of a material forming the oxide layer.
    Type: Grant
    Filed: May 7, 2013
    Date of Patent: January 6, 2015
    Assignee: Sony Corporation
    Inventors: Yoshiyuki Ohba, Susumu Hiyama, Itaru Oshiyama
  • Patent number: 8921966
    Abstract: An image sensor includes: a photoelectric conversion pixel having a photoelectric conversion element that performs photoelectric conversion, and a light guide formed of a first material in an interlayer insulation film above the photoelectric conversion element; and a light-shielded pixel having a photoelectric conversion element that performs photoelectric conversion, a light guide formed of a second material that is different from the first material in an interlayer insulation film above the photoelectric conversion element, and a light-shielding layer formed above the light guide.
    Type: Grant
    Filed: March 10, 2010
    Date of Patent: December 30, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventor: Takafumi Kishi
  • Patent number: 8900913
    Abstract: An embodiment of the invention provides a method for forming a chip package which includes: providing a substrate having a first surface and a second surface, wherein at least one optoelectronic device is formed in the substrate; forming an insulating layer on the substrate; forming a conducting layer on the insulating layer on the substrate, wherein the conducting layer is electrically connected to the at least one optoelectronic device; and spraying a solution of light shielding material on the second surface of the substrate to form a light shielding layer on the second surface of the substrate.
    Type: Grant
    Filed: August 17, 2012
    Date of Patent: December 2, 2014
    Inventors: Chuan-Jin Shiu, Po-Shen Lin, Shen-Yuan Mao, Cheng-Chi Peng
  • Patent number: 8901692
    Abstract: An imaging device includes at least one photosite formed in a semiconducting substrate and fitted with a filtering device for filtering at least one undesired radiation. The filtering device is buried in the semiconducting substrate at a depth depending on the wavelength of the undesired radiation.
    Type: Grant
    Filed: December 12, 2011
    Date of Patent: December 2, 2014
    Assignees: STMicroelectronics (Grenoble 2) SAS, STMicroelectronics (Rousset) SAS, STMicroelectronics SA
    Inventors: David Coulon, Benoit Deschamps, Frédéric Barbier
  • Patent number: 8895346
    Abstract: A solid-state imaging device includes: a pixel section including, in a semiconductor substrate, plural photoelectric conversion sections that photoelectrically convert incident light to generate signal charges; metal wirings formed, on a first insulating film formed on the semiconductor substrate, above regions among the photoelectric conversion sections and above the periphery of the pixel section; a second insulating film formed on the first insulating film to cover the metal wirings; a first light shielding film formed on the second insulating film and having an opening above the pixel section; and a second light shielding film formed above the metal wirings above the pixel section and having thickness smaller than that of the first light shielding film.
    Type: Grant
    Filed: July 5, 2012
    Date of Patent: November 25, 2014
    Assignee: Sony Corporation
    Inventor: Masaaki Takizawa
  • Patent number: 8890191
    Abstract: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device formed in the substrate; a conducting layer disposed on the substrate, wherein the conducting layer is electrically connected to the optoelectronic device; an insulating layer disposed between the substrate and the conducting layer; a light shielding layer disposed on the second surface of the substrate and directly contacting with the conducting layer, wherein the light shielding layer has a light shielding rate of more than about 80% and has at least an opening exposing the conducting layer; and a conducting bump disposed in the opening of the light shielding layer to electrically contact with the conducting layer, wherein all together the light shielding layer and the conducting bump substantially and completely cover the second surface of the substrate.
    Type: Grant
    Filed: June 28, 2012
    Date of Patent: November 18, 2014
    Inventors: Chuan-Jin Shiu, Po-Shen Lin, Yi-Ming Chang
  • Patent number: 8890271
    Abstract: Various embodiments for etching of silicon nitride (SixNy) lightpipes, waveguides and pillars, fabricating photodiode elements, and integration of the silicon nitride elements with photodiode elements are described. The results show that the quantum efficiency of the photodetectors (PDs) can be increased using vertical silicon nitride vertical waveguides.
    Type: Grant
    Filed: December 13, 2010
    Date of Patent: November 18, 2014
    Assignees: Zena Technologies, Inc., President and Fellows of Harvard College
    Inventors: Turgut Tut, Peter Duane, Young-June Yu, Winnie N. Ye, Munib Wober, Kenneth B. Crozier
  • Patent number: 8866205
    Abstract: A photoelectric conversion device is disclosed. The photoelectric conversion device includes a semiconductor substrate having a plurality of photoelectric converters, a multilayer wiring structure arranged on the semiconductor substrate, and a planarized layer arranged on the multilayer wiring structure. The multilayer wiring structure includes a first wiring layer, an interlayer insulation film arranged to cover the first wiring layer, and a second wiring layer serving as a top wiring layer arranged on the interlayer insulation film. The planarized layer covers the interlayer insulation film and the second wiring layer. The second wiring layer is thinner than the first wiring layer.
    Type: Grant
    Filed: August 24, 2007
    Date of Patent: October 21, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yasushi Nakata, Shigeru Nishimura, Ryuichi Mishima
  • Patent number: 8853848
    Abstract: An interconnection structure is disposed between a first conductive layer and a second conductive layer substantially parallel to each other. The conductive layer includes a signal trace. The interconnection structure includes a conductor pillar and a shielding wall pillar. The conductor pillar goes through between the two conductive layers and is electrically connected to the signal trace of the first conductive layer. The shielding wall pillar is also disposed between the two conductive layers and located at a portion of an external region surrounding the conductor pillar and electrically coupled to the conductor pillar. The conductor pillar and the shielding wall pillar are disposed in pair or in group. The shielding wall pillar with a shape different from that of the conductor pillar would make the conductor pillar serve as a connection with a designed impedance and the capability of controlling impedance based on the special shape design thereof.
    Type: Grant
    Filed: May 17, 2011
    Date of Patent: October 7, 2014
    Assignee: Industrial Technology Research Institute
    Inventor: Shih-Hsien Wu
  • Patent number: 8853758
    Abstract: There is provided a solid-state imaging device including plural pixel regions, each including a pixel having a photoelectric conversion unit, a color filter, and a microlens that condenses the incident light to the photoelectric conversion unit; a first light shielding portion that has a first end face at the side of the microlens, and a second end face opposite to the first end face, and that is formed at each side portion of each pixel region of the plurality of the pixel regions; and a second light shielding portion that has a first end face at the side of the microlens, and a second end face opposite to the first end face, and that is formed at each corner portion of the pixel region, in which a distance from a surface of the pixel to the first end face is short compared to the first light shielding portion.
    Type: Grant
    Filed: March 6, 2012
    Date of Patent: October 7, 2014
    Assignee: Sony Corporation
    Inventor: Yoichi Ootsuka
  • Patent number: 8785956
    Abstract: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device formed in the substrate; a conducting layer disposed on the substrate, wherein the conducting layer is electrically connected to the optoelectronic device; an insulating layer disposed between the substrate and the conducting layer; a first light shielding layer disposed on the second surface of the substrate; and a second light shielding layer disposed on the first light shielding layer and directly contacting with the first light shielding layer, wherein a contact interface is between the first light shielding layer and the second light shielding layer.
    Type: Grant
    Filed: July 27, 2012
    Date of Patent: July 22, 2014
    Inventors: Chuan-Jin Shiu, Po-Shen Lin, Yi-Ming Chang, Hui-Ching Yang, Chiung-Lin Lai
  • Patent number: 8785994
    Abstract: An X-ray detector including: a substrate that is divided into a light detection area and a non-detection area and includes a plurality of pixels; a photodiode disposed on the light detection area; a thin film transistor that is disposed on the non-detection area and is electrically connected to a lower portion of the photodiode; a plurality of wires that are electrically connected to the thin film transistor and are positioned on the non-detection area; at least one insulating layer disposed so as to cover at least the thin film transistor and the plurality of wires; a scintillator layer disposed on the at least one insulating layer over an entire surface of the substrate; and a shielding part disposed between the at least one insulating layer and the scintillator layer to shield the non-detection area.
    Type: Grant
    Filed: November 19, 2012
    Date of Patent: July 22, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventor: Dong-Hyuk Kim
  • Patent number: 8779541
    Abstract: A solid-state imaging device including a plurality of pixels arranged two-dimensionally, wherein each of the pixels has at least a planarizing film formed on the upper side of a photoelectric conversion element, a filter formed on the upper side of the planarizing film, and a microlens formed on the upper side of the filter. The filter of some of the pixels is a color filter permitting transmission therethrough of light of a predetermined color component, whereas the filter of other pixels is a white filter permitting transmission therethrough of light in the whole visible spectral range. The refractive indices of the white filter, the microlens and the planarizing film have the following relationship: (Refractive index of white filter)?(Refractive index of microlens)>(Refractive index of planarizing film).
    Type: Grant
    Filed: November 16, 2012
    Date of Patent: July 15, 2014
    Assignee: Sony Corporation
    Inventors: Sintaro Nakajiki, Yukihiro Sayama, Yuichi Seki, Masanori Harasawa, Yoshinori Toumiya
  • Patent number: 8772893
    Abstract: A pixel structure including an active device, a capacitor electrode line, a light shielding layer, a color filter pattern and a pixel electrode is provided. The active device and the capacitor electrode line are disposed on a substrate. The light shielding layer is disposed on the substrate, and the dielectric constant of the light shielding layer is less than 6. The light shielding layer defines a unit area on the substrate, and a contact hole is formed in the light shielding layer above the active device. A color filter pattern is disposed in the unit area, wherein the dielectric constant of the color filter pattern is less than 6, and the color filter pattern does not fill into the contact hole. The pixel electrode is disposed on the color filter pattern, in which the pixel electrode fills into the contact hole so as to electrically connect with the active device.
    Type: Grant
    Filed: August 27, 2012
    Date of Patent: July 8, 2014
    Assignee: Au Optronics Corporation
    Inventors: Yen-Heng Huang, Chung-Kai Chen, Chia-Hui Pai
  • Patent number: 8772898
    Abstract: A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element. The trench is positioned to impede a light path between the light emitting element and the light sensing element when the light path is internal to the semiconductor layer.
    Type: Grant
    Filed: February 9, 2012
    Date of Patent: July 8, 2014
    Assignee: OmniVision Technologies, Inc.
    Inventors: Duli Mao, Hsin-Chih Tai, Vincent Venezia, Yin Qian, Gang Chen, Howard E. Rhodes
  • Patent number: 8772844
    Abstract: Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.
    Type: Grant
    Filed: December 29, 2011
    Date of Patent: July 8, 2014
    Assignee: Wi Lan, Inc.
    Inventors: Motonari Katsuno, Ryouhei Miyagawa, Masayuki Matsunaga
  • Patent number: 8766156
    Abstract: A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.
    Type: Grant
    Filed: July 20, 2011
    Date of Patent: July 1, 2014
    Assignee: Sony Corporation
    Inventors: Atsushi Kawashima, Katsunori Hiramatsu, Yasufumi Miyoshi
  • Patent number: 8766291
    Abstract: The present invention relates to efficient organic light emitting devices (OLEDs). The devices employ three emissive sub-elements, typically emitting red, green and blue, to sufficiently cover the visible spectrum. Thus, the devices may be white-emitting OLEDs, or WOLEDs. Each sub-element comprises at least one organic layer which is an emissive layer—i.e., the layer is capable of emitting light when a voltage is applied across the stacked device. The sub-elements are vertically stacked and are separated by charge generating layers. The charge-generating layers are layers that inject charge carriers into the adjacent layer(s) but do not have a direct external connection.
    Type: Grant
    Filed: October 28, 2009
    Date of Patent: July 1, 2014
    Assignee: The Regents of the University of Michigan
    Inventors: Stephen Forrest, Xiangfei Qi, Michael Slootsky
  • Patent number: 8765536
    Abstract: A method of forming an integrated photonic semiconductor structure having a photonic device and a CMOS device may include depositing a first silicon nitride layer having a first stress property over the photonic device, depositing an oxide layer having a stress property over the deposited first silicon nitride layer, and depositing a second silicon nitride layer having a second stress property over the oxide layer. The deposited first silicon nitride layer, the oxide layer, and the second silicon nitride layer encapsulate the photonic device.
    Type: Grant
    Filed: September 28, 2012
    Date of Patent: July 1, 2014
    Assignee: International Business Machines Corporation
    Inventors: Solomon Assefa, Tymon Barwicz, Swetha Kamlapurkar, Marwan H. Khater, Steven M. Shank, Yurii A. Vlasov
  • Patent number: 8759850
    Abstract: A component including a substrate, at least one layer including a color conversion material including quantum dots disposed over the substrate, and a layer including a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material including quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein.
    Type: Grant
    Filed: March 25, 2013
    Date of Patent: June 24, 2014
    Assignee: QD Vision, Inc.
    Inventors: Seth Coe-Sullivan, Peter T. Kazlas
  • Patent number: 8749006
    Abstract: An improved image sensor, e.g., CCD, CID, CMOS. The image sensor includes a substrate, e.g., silicon wafer. The sensor also includes a plurality of photo diode regions, where each of the photo diode regions is spatially disposed on the substrate. The sensor has an interlayer dielectric layer overlying the plurality of photo diode regions and a shielding layer formed overlying the interlayer dielectric layer. A silicon dioxide bearing material is overlying the shielding layer. A plurality of lens structures are formed on the silicon dioxide bearing material. The sensor also has a color filter layer overlying the lens structures and a plurality of second lens structures overlying the color filter layer according to a preferred embodiment.
    Type: Grant
    Filed: December 7, 2007
    Date of Patent: June 10, 2014
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Herb Huang, Mieno Fumitake
  • Patent number: 8729650
    Abstract: A solid-state imaging device includes a layer including an on-chip lens above a sensor section, and the layer including the on-chip lens is composed of an inorganic film which transmits ultraviolet light. The layer including the on-chip lens may further include a planarizing film located below the on-chip lens. A method of fabricating a solid-state imaging device includes the steps of forming a planarizing film composed of a first inorganic film, forming a second inorganic film on the planarizing film, forming a lens-shaped resist layer on the second inorganic film, and etching back the resist layer to form an on-chip lens composed of the second inorganic film. The first inorganic film constituting the planarizing film and the second inorganic film constituting the on-chip lens preferably transmit ultraviolet light.
    Type: Grant
    Filed: April 14, 2008
    Date of Patent: May 20, 2014
    Assignee: Sony Corporation
    Inventors: Kouichi Harada, Yasuhiro Ueda, Nobuhiko Umezu, Kazushi Wada, Yoshinori Toumiya, Takeshi Matsuda
  • Patent number: 8709854
    Abstract: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: April 29, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Wen-De Wang, Keng-Yu Chou, Shuang-Ji Tsai, Min-Feng Kao
  • Patent number: 8710610
    Abstract: A solid-state imaging apparatus including pixels each including a photoelectric conversion element, and a light shielding layer covering the photoelectric conversion element is provided. For each of the photoelectric conversion elements, the light shielding layer includes a light shielding portion which shields a portion of incident light to the photoelectric conversion element, and an aperture which passes another portion of the incident light. The pixels include first and second pixels which have different areas on a planar view of the photoelectric conversion element. The area of the photoelectric conversion element in the first pixel is larger than the area of the photoelectric conversion element in the second pixel on the planar view. An area of the light shielding portion included in the first pixel is larger than an area of the light shielding portion included in the second pixel.
    Type: Grant
    Filed: June 23, 2011
    Date of Patent: April 29, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Shoji Kono, Shin Kikuchi, Yuichiro Yamashita, Masaru Fujimura, Shinichiro Shimizu, Yu Arishima
  • Patent number: 8698265
    Abstract: Provided are an image sensor and a package including the same. The image sensor may include an interconnection layer comprising a plurality of interconnections that are vertically stacked, a light penetration layer including color filters and microlenses, a semiconductor layer disposed between the interconnection layer and the light penetration layer and including photoelectrical transformation elements and a light shielding pattern disposed between the light penetration layer and the semiconductor layer. A surface of the semiconductor layer adjacent to the light penetration layer defines a recess region recessed toward the interconnection layer. The light shielding pattern is formed in the recess region and at least one of the photoelectrical transformation elements is formed in the semiconductor layer between the light shielding pattern and the interconnection layer.
    Type: Grant
    Filed: April 27, 2011
    Date of Patent: April 15, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Junho Yoon
  • Patent number: 8698266
    Abstract: An image sensor with decreased optical interference between adjacent pixels is provided. An image sensor, which is divided into a pixel region and a peripheral region, the image sensor including a photodiode formed in a substrate in the pixel region, first to Mth metal lines formed over the substrate in the pixel region, where M is a natural number greater than approximately 1, first to Nth metal lines formed over a substrate in the peripheral region, where N is a natural number greater than M, at least one layer of dummy metal lines formed over the Mth metal lines but formed not to overlap with the photodiode, and a microlens formed over the one layer of the dummy metal lines to overlap with the photodiode.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: April 15, 2014
    Assignee: Intellectual Ventures II LLC
    Inventors: Won-Ho Lee, Dong-Heon Cho
  • Patent number: 8692345
    Abstract: An image sensing device includes a light-shielding film having transit portions, a first film and a second film. The second film comprises a first layer having a different refractive index from the first film. The first layer lies within at least the transit portions, and forms interfaces with the first film. The distance between the interface and the corresponding photoelectric conversion portion is greater than the distance between the photoelectric conversion portion and the lower end of the corresponding transit portion.
    Type: Grant
    Filed: August 3, 2012
    Date of Patent: April 8, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toru Nakazawa, Hiroaki Kobayashi
  • Patent number: 8674467
    Abstract: Provided is a method of fabricating an image sensor device. The method includes providing a device substrate having a front side and a back side. The method includes forming first and second radiation-sensing regions in the device substrate, the first and second radiation-sensing regions being separated by an isolation structure. The method also includes forming a transparent layer over the back side of the device substrate. The method further includes forming an opening in the transparent layer, the opening being aligned with the isolation structure. The method also includes filling the opening with an opaque material.
    Type: Grant
    Filed: July 10, 2012
    Date of Patent: March 18, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-De Wang, Dun-Nian Yaung, Jen-Cheng Liu, Chun-Chieh Chuang, Jeng-Shyan Lin
  • Patent number: 8669631
    Abstract: A solid state imaging device according to one embodiment of the present invention includes a substrate with a solid state imaging element, a first impurity layer, a plurality of external electrodes, and a translucent substrate. The first impurity layer is formed on a back surface side of the substrate, and forms a pn junction with the substrate. The plurality of external electrodes is formed on the back surface of the substrate and is electrically connected to the solid state imaging element. The translucent substrate is fixed to the substrate.
    Type: Grant
    Filed: March 16, 2011
    Date of Patent: March 11, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Yoshiteru Koseki
  • Patent number: 8624341
    Abstract: A light sensor is described that includes an IR cut interference filter and at least one color interference filter integrated on-chip. The light sensor comprises a semiconductor device (e.g., a die) that includes a substrate. Photodetectors are formed in the substrate proximate to the surface of the substrate. An IR cut interference filter is disposed over the photodetectors. The IR cut interference filter is configured to filter infrared light from light received by the light sensor to at least substantially block infrared light from reaching the photodetectors. At least one color interference filter is disposed proximate to the IR cut interference filter. The color interference filter is configured to filter visible light received by the light sensor to pass light in a limited spectrum of wavelengths (e.g., light having wavelengths between a first wavelength and a second wavelength) to at least one of the photodetectors.
    Type: Grant
    Filed: July 21, 2011
    Date of Patent: January 7, 2014
    Assignee: Maxim Integrated Products, Inc.
    Inventors: Prashanth Holenarsipur, Zhihai Wang, Nicole Dorene Kerness
  • Patent number: 8610225
    Abstract: A radiation-receiving semiconductor component is specified. A semiconductor body is formed with silicon and has a radiation entrance surface and also an absorption zone. Electromagnetic radiation passes into the semiconductor body through the radiation entrance surface and is absorbed. The absorption zone has a thickness of at most 10 ?m. A filter layer is formed with a dielectric material. The filter layer covers the radiation entrance surface of the semiconductor body. A potting body covers the semiconductor body at least at the radiation entrance surface thereof. The potting body contains a radiation-absorbing material.
    Type: Grant
    Filed: March 10, 2010
    Date of Patent: December 17, 2013
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Christian Müller, Werner Kuhlmann
  • Patent number: 8610234
    Abstract: A unit pixel of an image sensor and a photo detector are disclosed. The photo detector can include: a substrate in which a V-shaped groove having a predetermined angle is formed; a light-absorbing part formed in a floated structure above the V-shaped groove and to which light is incident; an oxide film formed between the light-absorbing part and the V-shaped groove and in which tunneling occurs; a source formed adjacent to the oxide film on a slope of one side of the V-shaped groove and separated from the light-absorbing part by the oxide film; a drain formed adjacent to the oxide film on a slope of the other side of the V-shaped groove and separated from the light-absorbing part by the oxide film; and a channel interposed between the source and the drain along the V-shaped groove to form flow of an electric current between the source and the drain.
    Type: Grant
    Filed: September 2, 2011
    Date of Patent: December 17, 2013
    Inventor: Hoon Kim
  • Patent number: 8604579
    Abstract: Provided is a liquid crystal display device (1) comprising a substrate (2), a base coating film (3) disposed on the substrate (2), a base insulating film (4) disposed on the base coating film (3), and a semiconductor film (20) disposed on the base insulating film (4) and made of a polysilicon film. Below the semiconductor film (20), a light-shielding film (28) is formed, which is embedded in the base coating film (3).
    Type: Grant
    Filed: August 25, 2009
    Date of Patent: December 10, 2013
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Masahiro Mitani, Yutaka Takafuji
  • Patent number: 8604578
    Abstract: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device disposed at the first surface; a protection layer located on the second surface of the substrate, wherein the protection layer has an opening; a light shielding layer located on the second surface of the substrate, wherein a portion of the light shielding layer extends into the opening of the protection layer; a conducting bump disposed on the second surface of the substrate and filled in the opening of the protection layer; and a conducting layer located between the substrate and the protection layer, wherein the conducting layer electrically connects the optoelectronic device to the conducting bump.
    Type: Grant
    Filed: October 21, 2011
    Date of Patent: December 10, 2013
    Inventors: Hsin-Chih Chiu, Chia-Ming Cheng, Chuan-Jin Shiu, Bai-Yao Lou
  • Patent number: 8592244
    Abstract: Pixel sensor cells with an opaque mask layer and methods of manufacturing are provided. The method includes forming a transparent layer over at least one active pixel and at least one dark pixel of a pixel sensor cell. The method further includes forming an opaque region in the transparent layer over the at least one dark pixel.
    Type: Grant
    Filed: July 25, 2011
    Date of Patent: November 26, 2013
    Assignee: International Business Machines Corporation
    Inventors: Jeffrey P. Gambino, Robert K. Leidy, Mark D. Levy
  • Patent number: 8569854
    Abstract: A semiconductor imaging instrument is disclosed, including a prescribed substrate, an imaging device array provided on the substrate and having plural semiconductor imaging devices and electrodes for outputting a signal charge upon photoelectric conversion of received light, and a color filter layer provided on the imaging device array, with an infrared light absorbing dye being contained in the color filter layer.
    Type: Grant
    Filed: January 10, 2012
    Date of Patent: October 29, 2013
    Assignee: Sony Corporation
    Inventor: Yoshinori Uchida
  • Patent number: 8536671
    Abstract: According to an embodiment of the invention, a chip package is provided, which includes: a substrate having a first surface and a second surface; an optical device between the first surface and the second surface of the substrate; a protection layer formed on the second surface of the substrate, wherein the protection layer has at least an opening; at least a conducting bump formed in the opening of the protection layer and electrically connected to the optical device; and a light shielding layer formed on the protection layer, wherein the light shielding layer is further extended onto a sidewall of the opening of the protection layer.
    Type: Grant
    Filed: June 6, 2011
    Date of Patent: September 17, 2013
    Inventors: Tsang-Yu Liu, Yu-Lin Yen, Chuan-Jin Shiu, Po-Shen Lin
  • Publication number: 20130221468
    Abstract: A compact sensor module and methods for forming the same are disclosed herein. In some embodiments, a sensor die is mounted on a sensor substrate. A processor die can be mounted on a flexible processor substrate. In some arrangements, a thermally insulating stiffener can be disposed between the sensor substrate and the flexible processor substrate.
    Type: Application
    Filed: February 27, 2012
    Publication date: August 29, 2013
    Applicant: ANALOG DEVICES, INC.
    Inventor: David Frank Bolognia
  • Publication number: 20130207212
    Abstract: A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element. The trench is positioned to impede a light path between the light emitting element and the light sensing element when the light path is internal to the semiconductor layer.
    Type: Application
    Filed: February 9, 2012
    Publication date: August 15, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Duli Mao, Hsin-Chih Tai, Vincent Venezia, Yin Qian, Gang Chen, Howard E. Rhodes
  • Patent number: 8508010
    Abstract: A method of manufacturing a solid-state imaging device is provided. The method includes: forming an insulating layer extending over an effective pixel region where a plurality of pixels each having a photoelectric conversion element is arranged and a peripheral area adjacent to the effective pixel region; forming an opening in the insulating layer located immediately above the photoelectric conversion element on the effective pixel region; forming a dummy opening in the insulating layer on the peripheral region; and forming a buried layer on the insulating layer to fill the opening and the dummy opening formed in the insulating layer.
    Type: Grant
    Filed: December 16, 2008
    Date of Patent: August 13, 2013
    Assignee: Sony Corporation
    Inventor: Shunsuke Maruyama