Abstract: A light-emitting diode (LED) device includes at least one LED unit, each including a substrate; an electrical coupling layer deposited above the substrate; a parallel-connected epitaxial structure deposited above the electrical coupling layer; and an intermediate layer deposited between the electrical coupling layer and the parallel-connected epitaxial structure. In another embodiment, the parallel-connected epitaxial structure is deposited above a conductive layer; the electrical coupling layer is deposited above the parallel-connected epitaxial structure; and the intermediate layer is deposited between the parallel-connected epitaxial structure and the electrical coupling layer.

Abstract: Disclosed is a light emitting device including a light emitting structure including a first conductive-type semiconductor layer, a second conductive-type semiconductor layer and an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, a first electrode layer electrically connected to the first conductive-type semiconductor layer, and a second electrode layer disposed on the second conductive-type semiconductor layer, wherein the second electrode layer includes a plurality of adhesive seeds spaced from one another on the light emitting structure, a reflective layer disposed on the plurality of adhesive seeds, and a protective layer disposed on the reflective layer, wherein the reflective layer contains silver (Ag) or an Ag alloy. As a result, it is possible to improve light reflectance and electrical properties of the electrode layer of the light emitting device and reliability of the electrode layer.

Abstract: Solid state transducer (“SST”) assemblies with remote converter material and improved light extraction efficiency and associated systems and methods are disclosed herein. In one embodiment, an SST assembly has a front side from which emissions exit the SST assembly and a back side opposite the front side. The SST assembly can include a support substrate having a forward-facing surface directed generally toward the front side of the SST assembly and an SST structure carried by the support substrate. The SST structure can be configured to generate SST emissions. The SST assembly can further include a converter material spaced apart from the SST structure. The forward-facing surface and the converter material can be configured such that at least a portion of the SST emissions that exit the SST assembly at the front side do not pass completely through the converter material.

Abstract: A group III nitride-based light emitting device includes an n-type group III nitride-based semiconductor layer, a p-type group III nitride-based semiconductor layer, and a group III nitride-based active region between the p-type semiconductor layer and the n-type semiconductor layer. The active region includes a plurality of sequentially stacked group III nitride-based quantum well layers interspersed with barrier layers. A plurality of the barrier layers have a variation in composition of a first element along a growth direction within a thickness of each of the plurality of barrier layers, and the variation in composition of the first element has at least one minimum and a position of the minimum varies in the plurality of barrier layers. The first element may be indium or aluminium, and the number of barrier layers including the composition variation may be at least three barrier layers. The composition variation may vary linearly or non-linearly.

Abstract: A light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layer stacked in that order; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer. The light emitting diode further includes a carbon nanotube layer. The carbon nanotube layer is enclosed in the interior of the first semiconductor layer. The carbon nanotube layer includes a number of carbon nanotubes.

Abstract: A semiconductor light-emitting element including a substrate, a laminated semiconductor layer including a light-emitting layer formed over the substrate, one electrode (111) formed over the upper face of the laminated semiconductor layer, and an other electrode formed over the exposed surface of the semiconductor layer, from which the laminated semiconductor layer is partially cut off. The one electrode (111) includes a junction layer (110) and a bonding pad electrode (120) formed to cover the junction layer. The bonding pad electrode has a maximum thickness larger than that of the junction layer, and is composed of one or two or more layers. Slopes (110c), (117c) and (119c), which are made gradually thinner toward the outer circumference, are formed in the outer circumference portions (110d) and (120d) of the junction layer and the bonding pad electrode. Also disclosed is a method for manufacturing the element and a lamp.

Abstract: A semiconductor light emitting device is disclosed, which comprises: a substrate having a first surface and a second surface; a first semiconductor conductive layer is disposed on the first surface of the substrate; an insert layer is disposed on the first semiconductor conductive layer; an active layer is disposed on the insert layer; a second semiconductor conductive layer is disposed on the active layer; a first electrode is disposed on the second semiconductor conductive layer; and a second electrode is disposed on the second surface of the substrate, in which the electric of the second electrode is opposite to that of the first electrode.

Abstract: A light emitting diode includes a substrate, an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a first electrode, and a second electrode. The n-type semiconductor layer is located between the substrate and the p-type semiconductor layer. The active layer is located between the n-type semiconductor layer and the p-type semiconductor layer. The wavelength of light emitted by the active layer is ?, and 222 nm???405 nm. The active layer includes i quantum barrier layers and (i?1) quantum wells, each quantum well is located between any two quantum barrier layers, and i is an integer greater than or equal to 2. The thickness of each of the quantum barrier layers counting from the p-type semiconductor layer is T1 to Ti, and T1 is greater than T2 and T3, or T1=T2>T3, or T1>T2>T3.

Abstract: A light emitting diode device includes a first diode structure, a second diode structure on the first diode structure, and a conductive junction between the first diode structure and the second diode structure. The conductive junction includes a transparent conductive layer between the first diode structure and the second diode structure. Low resistance heterojunction tunnel junction structures including delta-doped layers are also disclosed.

Abstract: A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.

Abstract: A light emitting diode (LED) die includes a semiconductor substrate having an n-type confinement layer, a multiple quantum well (MQW) layer in electrical contact with the n-type confinement layer configured to emit electromagnetic radiation, a p-type confinement layer in electrical contact with the multiple quantum well (MQW) layer; multiple light extraction structures on the n-type confinement layer configured to scatter the electromagnetic radiation; and an electrode in a recess embedded in the n-type confinement layer proximate to the light extraction structures. A method of fabrication includes: forming the semiconductor substrate; forming a recess in the n-type confinement layer having sidewalls and a planar bottom surface; forming an electrode in the recess comprising a conductive material conforming to the sidewalls and to the bottom surface of the recess; planarizing the electrode; and forming a plurality of light extraction structures in the n-type confinement layer proximate to the electrode.

Abstract: According to example embodiments, a white light-emitting diode may be configured to emit white light without a phosphor. According to example embodiments, a white light-emitting diode may include a first semiconductor layer that includes a plurality of hexagonal-pyramid shape nanostructures that protrude upwards from an upper surface of the first semiconductor layer, at least two multi-quantum well layers that are sequentially stacked on the hexagonal-pyramid shape nanostructures; and a second semiconductor layer on the multi-quantum well layers. The at least two multi-quantum well layers may be configured to generate lights having different wavelengths, and white light may be generated by mixing the lights having different wavelengths.

Abstract: A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.

Abstract: A source of photons resulting from a recombination of localized excitons, including a semiconductor layer having a central portion surrounded with heavily-doped regions; above said central portion, a layer portion containing elements capable of being activated by excitons, coated with a first metallization; and under the semiconductor layer, a second metallization of greater extension than the first metallization. The distance between the first and second metallizations is on the order of from 10 to 60 nm; and the lateral extension of the first metallization is on the order of from ?0/10*ne to ?0/2*ne, where ?0 is the wavelength in vacuum of the emitted light and ne is the effective refractive index of the mode formed in the cavity created by the two metallizations.

Abstract: The use of an abbreviated GaN growth mode on nano-patterned AGOG sapphire substrates, which utilizes a process of using 15 nm low temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated at least a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates.

Abstract: The present disclosure involves an apparatus. The apparatus includes a photonic die structure that includes a light-emitting diode (LED) die. The LED die is a vertical LED die in some embodiments. The LED die includes a substrate. A p-doped III-V compound layer and an n-doped III-V compound layer are each disposed over the substrate. A multiple quantum well (MQW) layer is disposed between the p-doped III-V compound layer and the n-doped III-V compound layer. The p-doped III-V compound layer includes a first region having a non-exponential doping concentration characteristic and a second region having an exponential doping concentration characteristic. In some embodiments, the second region is formed using a lower pressure than the first region.

Abstract: A method for forming optical devices. The method includes providing a gallium nitride substrate member having a crystalline surface region and a backside region. The method also includes subjecting the backside region to a laser scribing process to form a plurality of scribe regions on the backside region and forming a metallization material overlying the backside region including the plurality of scribe regions. The method removes at least one optical device using at least one of the scribe regions.

Abstract: Methods for improving the temperature performance of AlInGaP based light emitters. Nitrogen is added to the quantum wells in small quantities. Nitrogen is added in a range of about 0.5 percent to 2 percent. The addition of nitrogen increases the conduction band offset and increases the separation of the indirect conduction band. To keep the emission wavelength in a particular range, the concentration of In in the quantum wells may be decreased or the concentration of Al in the quantum wells may be increased. The net result is an increase in the conduction band offset and an increase in the separation of the indirect conduction band.

Abstract: Light emitting devices comprise excitation sources arranged to excite quantum dots which fluoresce to emit light. In an embodiment, a device is manufactured by a process which involves applying an acoustic field is applied to a fluid containing quantum dots, to cause the quantum dots to accumulate at locations which are adjacent to excitation sources, and then initiating a phase transition of the fluid to trap the quantum dots in the locations adjacent to the excitation sources. The quantum dots are illuminated during the process and the resulting fluorescence is optically monitored to provide indicators of quantum dot distribution in the fluid. These indicators are used as feedback for controlling aspects of the process, such as initiating the phase transition.

Abstract: A light-emitting diode (LED) device includes at least one LED unit. Each LED unit includes at least one LED. Each LED includes an n-side nitride semiconductor layer, a p-side nitride semiconductor layer, and an active layer that is located between the n-side nitride semiconductor layer and the p-side nitride semiconductor layer. The active layer is includes one or more well layers. At least one of the well layers has a multilayered structure.

Abstract: A light emitting diode including a sapphire substrate, a n-type semiconductor layer, an active layer, a p-type semiconductor layer, a first and a second electrode is provided. The n-type semiconductor layer is disposed on the sapphire substrate. The active layer has an active region with a defect density greater than or equal to 2×107/cm3. The active layer is disposed between the n-type and p-type semiconductor layers. The wavelength of light emitted by the active layer is ?, and 222 nm???405 nm. The active layer includes i quantum barrier layers and (i?1) quantum wells, each quantum well is disposed between any two quantum barrier layers, and i?2. N-type dopant is doped in at least k layers of the i quantum barrier layers, wherein k is a natural number and k?1, when i even, k?i/2, and when i is odd, k?(i?1)/2.

Abstract: A semiconductor light emitting device includes a first conductivity-type first semiconductor layer, a second conductivity-type second semiconductor layer, a semiconductor light emitting layer, and first and second electrodes. The semiconductor light emitting layer is provided between the first semiconductor layer and the second semiconductor layer, and includes a multiple quantum well structure. The quantum well structure includes well layers and barrier layers each laminated alternately, each of the well layers being not less than 6 nm and not more than 10 nm. The first and second electrodes are electrically connected to the first and second semiconductor layers such that current flows in a direction substantially vertical to the main surface.

Abstract: A light-emitting diode (LED) device includes a first LED, a second LED, and a superlattice structure by which the first and the second LEDs are stacked. The superlattice structure has an absorption spectra, the first active layer of the first LED has a first emission spectra, and the second active layer of the second LED has a second emission spectra. The absorption spectra is located on a shorter-wavelength side of at least one of the first and the second emission spectra.

Abstract: The present disclosure involves an apparatus. The apparatus includes a photonic die structure that includes a plurality of layers. A current blocking layer is embedded in one of the plurality of layers. The current blocking layer is a doped layer. The present disclosure also involves a method of fabricating a light-emitting diode (LED). As a part of the method, an LED is provided. The LED includes a plurality of layers. A patterned mask is then formed over the LED. The patterned mask contains an opening. A dopant is introduced through the opening to a layer of the LED through either an ion implantation process or a thermal diffusion process. As a result of the dopant being introduced, a doped current blocking component is formed to be embedded within the layer of the LED.

Abstract: An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer formed on the first transition layer.

Abstract: A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwiched between p-GaN and n-GaN layers epitaxially grown on a reflector disposed over a support substrate. A coating layer is formed over an outside of the lateral faces of the active layer, and upper electrode is electrically connected to an upper portion of the n-GaN layer, and a distributed Bragg reflector (DBR) is formed over the n-GaN layer and the upper electrode. Accordingly, the PQR laser is capable of oscillating a power-saving vertically dominant 3D multi-mode laser suitable for a low power display device, prevent the light speckle phenomenon, and generate focus-adjusted 3D soft light.

Abstract: Processes for forming quantum well structures which are characterized by controllable nitride content are provided, as well as superlattice structures, optical devices and optical communication systems based thereon.

Abstract: An optical semiconductor device such as a light emitting diode is formed on a transparent substrate having formed thereon a template layer, such as AlN, which is transparent to the wavelength of emission of the optical device. A mixed alloy defect redirection region is provided over the template layer such that the composition of the defect redirection region approaches or matches the composition of the regions contiguous thereto. For example, the Al content of the defect redirection region may be tailored to provide a stepped or gradual Aluminum content from template to active layer. Strain-induced cracking and defect density are reduced or eliminated.

Abstract: A light emitting diode (LED) array includes a substrate with an array having a plurality of LED chips thereon, a dielectric layer, a plug, and a conductive connection layer. Each of the LED chips is isolated from another LED chip adjacent thereto by a trench. The dielectric layer covers a surface of the substrate exposed by the trench and sidewalls and partial surfaces of the LED chips adjacent to the trench. The plug fills the trench. The conductive connection layer is disposed over the plug and the dielectric layer to connect the LED chips with the LED chips adjacent thereto. Radiation emitted from one of the LED chips can be reflected by the dielectric layer and the plug, and finally reflected and output from a side of the LED chip not adjacent to the trench, thereby not affecting the adjacent LED chip and being absorbed by it.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission performance and high electrostatic breakdown voltage. The Group III nitride semiconductor light-emitting device has a layered structure in which an n-type contact layer, an ESD layer, an n-type cladding layer, a light-emitting layer, a p-type cladding layer, and a p-type contact layer are deposited on a sapphire substrate. The ESD layer has a pit. The n-type cladding layer and the light-emitting layer are formed without burying the pit. The pit has a diameter of 110 nm to 150 nm at an interface between the n-type cladding layer and the light-emitting layer. The barrier layer of the light-emitting layer is formed of AlGaN having an Al composition ratio of 3% to 7%.

Abstract: A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency.

Abstract: A lateral light emitting diode comprises a layer stack disposed on one side of a substrate, the layer stack including a p-type layer, n-type layer, and a p/n junction formed therebetween. The LED may further include a p-electrode disposed on a first side of the substrate and being in contact with the p-type layer on an exposed surface and an n-electrode disposed on the first side of the substrate and being in contact with an exposed surface of an n+ sub-layer of the n-type layer.

Abstract: Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material. The second contact is opposite the first contact. The SSL device further includes an insulative material between the first contact and the first semiconductor material, the insulative material being generally aligned with the second contact.

Abstract: Disclosed are a growth substrate and a light emitting device. The light emitting device includes a silicon substrate, a first buffer layer disposed on the silicon substrate and having an exposing portions of the silicon substrate, a second buffer layer covering the first buffer layer and the exposed portions of the silicon substrate, wherein the second buffer layer is formed of a material causing a eutectic reaction with the silicon substrate, a third buffer layer disposed on the second buffer layer, and a light emitting structure disposed on the third buffer layer, and the second buffer layer includes voids.

Abstract: The present disclosure involves a method of fabricating a lighting apparatus. The method includes forming a first III-V group compound layer over a substrate. The first III-V group compound layer has a first type of conductivity. A multiple quantum well (MQW) layer is formed over the first III-V group compound layer. A second III-V group compound layer is then formed over the MQW layer. The second III-V group compound layer has a second type of conductivity different from the first type of conductivity. Thereafter, a plurality of conductive components is formed over the second III-V group compound layer. A light-reflective layer is then formed over the second III-V group compound layer and over the conductive components. The conductive components each have better adhesive and electrical conduction properties than the light-reflective layer.

Abstract: A light emitting device has a nanostructured layer with nanovoids. The nanostructured layer can be provided below and adjacent to active region or on a substrate or a template below an n-type layer for the active region, so as to reduce strain between epitaxial layers in the light emitting device. A method of manufacturing the same is provided.

Abstract: A light emitting diode (LED) die includes a wavelength conversion layer having a base material, and a plurality of particles embedded in the base material including wavelength conversion particles, and reflective particles. A method for fabricating light emitting diode (LED) dice includes the steps of mixing the wavelength conversion particles in the base material to a first weight percentage, mixing the reflective particles in the base material to a second weight percentage, curing the base material to form a wavelength conversion layer having a selected thickness, and attaching the wavelength conversion layer to a die.

Abstract: This application discloses alight-emitting diode device, comprising an epitaxial structure having a light-emitting layer, a first-type conductivity layer, and a second-type conductivity layer wherein the thicknesses of the first-type conductivity confining layer is not equal to the second-type conductivity confining layer and the light-emitting layer is not overlapped with the portion of the epitaxial structure corresponding to the peak zone of the wave intensity distribution curve along the direction of the epitaxy growth.

Abstract: An improved method of fabricating a semiconductor light emitting diode (LED) is disclosed. The current blocking layer and the contact area for the n-type layer are implanted at the same time. In some embodiments, a dopant, which may be an n-type dopant, is implanted into a portion of the p-type layer to cause that portion to become either u-type or n-type. Simultaneously, the same dopant is implanted into at least a portion of the exposed n-type layer to increase its conductivity. After this implant, the dopant in both portions of the LED may be activated through the use of a single anneal cycle.

Abstract: In one embodiment, a semiconductor light emitting device includes a stacked structure, a first electrode and a second electrode. A first semiconductor layer is broken into several pieces. Light is taken out from a light emitting layer side to a third semiconductor layer side. The first electrode includes a first region connected to the first semiconductor layer and a second region directly connected to the second semiconductor layer. The second electrode is connected to the third semiconductor layer, is provided above the second region from an upper direction of view, and has a thin wire shape or a dot shape.

Abstract: A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes: a second conductive semiconductor layer; an active layer over the second conductive semiconductor layer; a first conductive semiconductor layer over the active layer; and a second electrode layer including a reflective layer under the second conductive semiconductor layer. The active layer includes a second active layer that actually emits light on the reflective layer and a first active layer that does not emit light on the second active layer. A distance between the reflective layer and the second active layer satisfies a constructive interference condition.

Abstract: The present invention belongs to the technical field of semiconductor devices and relates to a brightness-adjustable illuminator and an array and the manufacturing methods thereof. The illuminator is comprised of a semiconductor substrate, a MOSFET and a light-emitting diode that are located on the semiconductor substrate. The light-emitting diode (LED) and the control element (MOSFET) thereof are integrated on the same chip, so a single chip is capable of realizing the image transmission. An illuminator array may consist of a plurality of illuminators. Meanwhile, the invention also discloses a method for manufacturing the illuminator. Therefore, the projection equipment manufactured by the technology of the present invention has the advantages of small size, portability, low power consumption, etc. Furthermore, the use of the integrated circuit chip greatly simplifies the system of the projection equipment, reduces the production cost and greatly enhances the pixel quality and brightness.

Abstract: A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure layer, a conductive layer, a bonding layer, a support member, first and second pads, and first and second electrodes. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The conductive layer is disposed under the light emitting structure layer. The bonding layer is disposed under the conductive layer. The support member is disposed under the bonding layer. The first pad is disposed under the support member. The second pad is disposed under the support member at a distance from the first pad. The first electrode is connected between the first conductive type semiconductor layer and the first pad. The second electrode is connected between the bonding layer and the second pad.

Abstract: A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline AlxGa1-xN (0.8?x?1) on a first substrate made of c-plane sapphire and forming a GaN layer on the buffer layer; stacking the n-type semiconductor layer, the light emitting unit, and the p-type semiconductor layer on the GaN layer; and separating the first substrate by irradiating the GaN layer with a laser having a wavelength shorter than a bandgap wavelength of GaN from the first substrate side through the first substrate and the buffer layer.

Abstract: There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

Abstract: In one embodiment, a semiconductor light emitting device includes a stacked structure, a first electrode, a second electrode and a transparent conductive film. The stacked structure includes a first semiconductor layer with a first conductivity type, a light emitting layer and a second semiconductor layer with a second conductivity type which are formed and stacked directly or indirectly. The stacked structure is taken out light from the light emitting layer side to the second semiconductor layer side. The first electrode is connected to the first semiconductor layer. The second electrode is connected to a first principal surface of the second semiconductor layer which is exposed at the light emitting layer side. The second electrode is arranged in parallel with the first electrode. The transparent conductive film is provided so as to cover a second principal surface of the second semiconductor layer.

Abstract: A stack of semiconductor layers forms a re-emitting semiconductor construction (RSC). The stack includes an active region that converts light at a first wavelength to light at a second wavelength, the active region including at least one potential well. The stack also includes an inactive region extending from an outer surface of the stack to the active region. Depressions are formed in the stack that extend from the outer surface into the inactive region. An average depression depth is at least 50% of a thickness of the inactive region or at least 50% of a nearest potential well distance. The depressions may have at least a 40% packing density in plan view. The depressions may also have a substantial portion of their projected surface area associated with obliquely inclined surfaces.

Abstract: According to one embodiment, a semiconductor light-emitting device includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light-emitting portion and a stacked body. The light-emitting portion is provided between the n-type and p-type semiconductor layers and includes a barrier layer and a well layer. The well layer is stacked with the barrier layer. The stacked body is provided between the light-emitting portion and the n-type semiconductor layer and includes a first layer and a second layer. The second layer is stacked with the first layer. Average In composition ratio of the stacked body is higher than 0.4 times average In composition ratio of the light-emitting portion. The layer thickness tb of the barrier layer is 10 nanometers or less.

Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes an epitaxial growth surface and a light emitting surface. The first semiconductor layer, the active layer and the second semiconductor layer is stacked on the epitaxial growth surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.