Multiple Quantum Well Structure (epo) Patents (Class 257/E33.008)
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Publication number: 20130056705Abstract: A method of manufacturing a quantum dot layer, and a quantum dot optoelectronic device including the quantum dot layer. The method includes sequentially stacking a self-assembled monolayer, a sacrificial layer, and a quantum dot layer on a source substrate; disposing a stamp on the quantum dot layer; picking up the sacrificial layer, the quantum dot layer and the stamp; and removing the sacrificial layer from the quantum dot layer using a solution that dissolves the sacrificial layer.Type: ApplicationFiled: May 29, 2012Publication date: March 7, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tae-ho KIM, Kyung-sang CHO, Dae-young CHUNG, Byoung-lyong CHOI
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Publication number: 20130059407Abstract: On a light-emitting layer, a p cladding layer of AlGaInN doped with Mg is formed at a temperature of 800° C. to 950° C. Subsequently, on the p cladding layer, a capping layer of undoped GaN having a thickness of 5 ? to 100 ? is formed at the same temperature as employed for a p cladding layer. Next, the temperature is increased to the growth temperature contact layer in the subsequent process. Since the capping layer is formed, and the surface of the p cladding layer is not exposed during heating, excessive doping of Mg or mixture of impurities into the p cladding layer is suppressed. The deterioration of characteristics of the p cladding layer is prevented. Then, on the capping layer, a p contact layer is formed at a temperature of 950° C. to 1100° C.Type: ApplicationFiled: August 23, 2012Publication date: March 7, 2013Applicant: Toyoda Gosei Co., Ltd.Inventors: Atsushi Miyazaki, Koji Okuno, Shugo Nitta
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Patent number: 8390004Abstract: A light-emitting structure includes a p-doped region for injecting holes and an n-doped region for injecting electrons. At least one InGaN quantum well of a first type and at least one InGaN quantum well of a second type are arranged between the n-doped region and the p-doped region. The InGaN quantum well of the second type has a higher indium content than the InGaN quantum well of the first type.Type: GrantFiled: August 25, 2008Date of Patent: March 5, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Adrian Stefan Avramescu, Hans-Juergen Lugauer, Matthias Peter, Stephan Miller
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Publication number: 20130048940Abstract: Solid state radiation transducer (SSRT) assemblies and method for making SSRT assemblies. In one embodiment, a SSRT assembly comprises a first substrate having an epitaxial growth material and a radiation transducer on the first substrate. The radiation transducer can have a first semiconductor material grown on the first substrate, a second semiconductor material, and an active region between the first and second semiconductor materials. The SSRT can also have a first contact electrically coupled to the first semiconductor material and a second contact electrically coupled to the second semiconductor material. The first substrate has an opening through which radiation can pass to and/or from the first semiconductor material.Type: ApplicationFiled: August 26, 2011Publication date: February 28, 2013Applicant: MICRON TECHNOLOGY, INC.Inventors: Scott E. Sills, Anton J. De Villiers
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Publication number: 20130048845Abstract: An entangled photon pair source including: a quantum emitter having a ground state, two degenerate states that have one elementary excitation and different spins, and a state having two elementary excitations; a first optical cavity, wherein the quantum emitter is inserted; and a second optical cavity coupled with the first cavity. The geometry of the first and second cavities, and force of coupling thereof, are selected such that the whole formed by both coupled cavities has a first pair of polarization-degenerate modes, that are resonant with transitions between the state having two elementary excitations and the two degenerate states having one elementary excitation from the quantum emitter, and a second pair of polarization-degenerate modes that are resonant with transitions between the degenerate states, having one elementary excitation, and the ground state.Type: ApplicationFiled: January 14, 2011Publication date: February 28, 2013Applicant: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUEInventors: Pascale Senellart, Adrien Dousse
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Publication number: 20130048944Abstract: Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a first conductive semiconductor layer; an active layer including a quantum well and a quantum barrier and disposed on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The active layer includes a first quantum well adjacent to the second conductive semiconductor layer, a second quantum well adjacent to the first quantum well, and a first quantum barrier between the first quantum well and the second quantum well. A recombination rate of electron-hole in the second quantum well is higher than the recombination rate of the electron-hole in the first quantum well, and the first quantum well has an energy level higher than the energy level of the second quantum well.Type: ApplicationFiled: August 14, 2012Publication date: February 28, 2013Inventors: Jong Hak WON, Jong Ho Na, Jae In Yoon, Hoon Ki Hong, Se Hwan Sim
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Publication number: 20130048838Abstract: A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InxGa1-xAs (0.38?x?0.68) layer and a GaAs1-ySby (0.25?y?0.73) layer, and in the GaAs1-ySby layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.Type: ApplicationFiled: December 3, 2010Publication date: February 28, 2013Applicant: Sumitomo Electric Industries, Ltd.Inventors: Hiroki Mori, Yasuhiro Iguchi, Hiroshi Inada, Youichi Nagai, Kouhei Miura, Hideaki Nakahata, Katsushi Akita, Takashi Ishizuka, Kei Fujii
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Publication number: 20130048942Abstract: A nitride semiconductor template includes a substrate, and a group III nitride semiconductor layer having an oxygen-doped layer formed on the substrate, and a silicon-doped layer formed on the oxygen-doped layer. A total thickness of the group III nitride semiconductor layer is not smaller than 4 ?m and not greater than 10 ?m, and an average silicon carrier concentration in the silicon-doped layer is not lower than 1×1018 cm?3 and not higher than 5×1018 cm?3.Type: ApplicationFiled: August 10, 2012Publication date: February 28, 2013Applicant: Hitachi Cable, Ltd.Inventors: Taichiroo KONNO, Hajime Fujikura
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Publication number: 20130048945Abstract: A method for fabricating a light-emitting device is provided. The method includes: providing a substrate; forming a sacrificial dielectric layer on the substrate, wherein the sacrificial dielectric layer is a structure containing voids; forming a buffer layer on the sacrificial dielectric layer; forming an epitaxial light-emitting structure on the buffer layer; forming a metal bonding layer on the epitaxial light-emitting structure; bonding the metal bonding layer to a thermally conductive substrate; and wet etching the sacrificial dielectric layer for to remove the substrate.Type: ApplicationFiled: August 21, 2012Publication date: February 28, 2013Applicant: LEXTAR ELECTRONICS CORPORATIONInventors: Kuo-Lung Fang, Chi-Wen Kuo, Jun-Rong Chen, Chih-Hao Yang
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Patent number: 8384064Abstract: An electroluminescent device comprising a pair of electrodes, and an electroluminescent layer containing at least a luminescent layer, situated between the electrodes. The luminescent layer has a matrix material containing at least one organic compound, and quantum dots whose surfaces are protected by a protective material and that are dispersed in the matrix material. The protective material contains a first protective material. The absolute value of the ionization potential Ip(h), the absolute value of the electron affinity Ea(h), and the band gap Eg(h) of the first protective material, the absolute value of the ionization potential Ip(m), the absolute value of the electron affinity Ea(m), and the band gap Eg(m) of the organic compound, and the band gap Eg(q) of the quantum dots fulfill all of the conditions (A) to (C): (A) Ip(h)<Ip(m)+0.1 eV, (B) Ea(h)>Ea(m)?0.1 eV, and (C) Eg(q)<Eg(h)<Eg(m).Type: GrantFiled: September 26, 2008Date of Patent: February 26, 2013Assignee: Dai Nippon Printing Co., Ltd.Inventors: Tomonori Akai, Yasuhiro Iizumi
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Publication number: 20130044783Abstract: Light emitting devices are provided comprising an active region interposed between n-type and p-type sides of the device and a hole blocking layer interposed between the active region and the n-type side of the device. The active region comprises an active MQW structure and is configured for electrically-pumped stimulated emission of photons in the green portion of the optical spectrum. The n-type side of the light emitting device comprises an n-doped semiconductor region. The p-type side of the light emitting device comprises a p-doped semiconductor region. The n-doped semiconductor region comprises an n-doped non-polar or n-doped semi-polar substrate. Hole blocking layers according to the present disclosure comprise an n-doped semiconductor material and are interposed between the non-polar or semi-polar substrate and the active region of the light emitting device. The hole blocking layer (HBL) composition is characterized by a wider bandgap than that of the quantum well barrier layers of the active region.Type: ApplicationFiled: August 16, 2011Publication date: February 21, 2013Inventors: Rajaram Bhat, Dmitry S. Sizov, Chung-En Zah
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Publication number: 20130042527Abstract: An improved method to produce artificial light for plant cultivation, an illumination device with a semiconductor light emission solution and device suited for plant cultivation in a greenhouse environment are described. The best mode is considered to be a lighting device with binary alloy quantum dots (110, 120, 130, 140, 150, 160) made by colloidal methods to produce a size distribution of quantum dots that produces an emission spectrum similar to the photosynthetically active radiation (PAR) spectrum. The methods and arrangements allow more precise spectral tuning of the emission spectrum for lights used in plant (310, 311) cultivation. Therefore unexpected improvements in the photomorphogenetic control of plant growth, and further improvements in plant production are realized.Type: ApplicationFiled: February 8, 2012Publication date: February 21, 2013Applicant: VALOYA OYInventors: Lars Aikala, Ilkka Kivimaki
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Publication number: 20130037779Abstract: A nitride semiconductor light-emitting device includes an n-type nitride semiconductor layer, a V pit generation layer, an intermediate layer, a multiple quantum well light-emitting layer, and a p-type nitride semiconductor layer provided in this order. The multiple quantum well light-emitting layer is a layer formed by alternately stacking a barrier layer and a well layer having a bandgap energy smaller than that of the barrier layer. A V pit is partly formed in the multiple quantum well light-emitting layer, and an average position of starting point of the V pit is located in the intermediate layer.Type: ApplicationFiled: August 13, 2012Publication date: February 14, 2013Applicant: Sharp Kabushiki KaishaInventors: Tadashi Takeoka, Yoshihiko Tani, Kazuya Araki, Yoshihiro Ueta
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Patent number: 8373152Abstract: A light emitting element according to an exemplary embodiment includes: a support substrate; a second electrode layer formed on the support substrate; a current spreading layer formed on the support substrate; a second conductive semiconductor layer formed on the second electrode layer and the current spreading layer; an active layer formed on the second conductive semiconductor layer; a first conductive semiconductor layer formed on the active layer; and a first electrode layer formed on the first conductive semiconductor layer.Type: GrantFiled: March 27, 2009Date of Patent: February 12, 2013Assignee: LG Innotek Co., Ltd.Inventor: June O Song
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Publication number: 20130032779Abstract: A light emitting diode (LED) comprises a substrate, an epitaxial layer and an aluminum nitride (AlN) layer sequentially disposed on the substrate. The AlN layer comprises a plurality of stacks separated from each other, wherein the epitaxial layer entirely covers the plurality of stacks of the AlN layer. The AlN layer with a plurality of stacks reflects upwardly light generated by the epitaxial layer and downwardly toward the substrate to an outside of LED through a top plan of the LED. A method for forming the LED is also disclosed.Type: ApplicationFiled: April 26, 2012Publication date: February 7, 2013Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.Inventors: Chia-Hung HUANG, Shih-Cheng Huang, Po-Min TU, Shun-Kuei YANG, Ya-Wen LIN
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Publication number: 20130032776Abstract: A light emitting diode structure and a manufacturing method thereof are disclosed. The structure includes a substrate, an N type semiconductor layer, and active layer, a P type semiconductor layer, a current diffusion layer, and a metal electrode. The metal ions of the P type semiconductor layer may bond with hydrogen after process thermal annealing, and metal hydride may be generated. The metal hydride may be directly formed on the surface of the P type semiconductor layer and may be used as the current blocking layer. Since the metal hydride may be directly formed on the surface of the P type semiconductor layer, its structure is flat, which resolve the problem having the electrodes peeled off from the solder wire.Type: ApplicationFiled: September 23, 2011Publication date: February 7, 2013Applicant: LEXTAR ELECTRONICS CORP.Inventor: CHENG-HUNG CHEN
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Publication number: 20130034117Abstract: VCSELs and methods having improved characteristics. In some embodiments, these include a semiconductor substrate; a vertical-cavity surface-emitting laser (VCSEL) on the substrate; a first electrical contact formed on the VCSEL; a second electrical contact formed on the substrate, wherein the VCSEL includes: a first resonating cavity having first and second mirrors, at least one of which partially transmits light incident on that mirror, wherein the first second mirrors are electrically conductive. A first layer is between the first mirror and the second mirror and has a first aperture that restricts the path of current flow. A second layer is between the first layer and the second mirror and also restricts the electrical current path. A multiple-quantum-well (MQW) structure is between the first mirror and the second mirror, wherein the first and second apertures act together to define a path geometry of the current through the MQW structure.Type: ApplicationFiled: July 27, 2012Publication date: February 7, 2013Inventors: Mary K. Hibbs-Brenner, Klein L. Johnson, Matthew M. Dummer
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Patent number: 8367450Abstract: A light emitting system is disclosed. The system comprises an active region having a stack of bilayer quantum well structures separated from each other by barrier layers. Each bilayer quantum well structure is formed of a first layer made of a first semiconductor alloy for electron confinement and a second layer made of a second semiconductor alloy for hole confinement, wherein a thickness and composition of each layer is such that a characteristic hole confinement energy of the bilayer quantum well structure is at least 200 meV.Type: GrantFiled: February 21, 2011Date of Patent: February 5, 2013Assignee: Technion Research & Development Foundation Ltd.Inventors: Gad Bahir, Dan Fekete, Asaf Albo
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Publication number: 20130026448Abstract: A light emitting diode (LED) die includes a first-type semiconductor layer, a multiple quantum well (MQW) layer and a second-type semiconductor layer. The light emitting diode (LED) die also includes a peripheral electrode on the first-type semiconductor layer located proximate to an outer periphery of the first-type semiconductor layer configured to spread current across the first-type semiconductor layer. A method for fabricating the light emitting diode (LED) die includes the step of forming an electrode on the outer periphery of the first-type semiconductor layer at least partially enclosing and spaced from the multiple quantum well (MQW) layer configured to spread current across the first-type semiconductor layer.Type: ApplicationFiled: October 4, 2012Publication date: January 31, 2013Applicant: SEMILEDS OPTOELECTRONICS CO., LTD.Inventor: SemiLEDS Optoelectronics Co., Ltd.
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Publication number: 20130026447Abstract: The invention is directed to a surface emitting semiconductor light-emitting diode (LED) in which a reflector layer (4) of the first conductivity type is provided between a substrate (2) and a first barrier layer (5). A first contact layer (9) has at least one emitting surface (13) via which radiation emitted by an active layer (6) exits the LED. The emitting surfaces (13) are electrically and optically isolated from one another by surface implanted regions (11) in the first contact layer (9) which are irradiated with electric charge carriers. The areas of the layers located below the emitting surface (13) starting from the first contact layer (9) and proceeding as far as at least through the active layer (6) are electrically and optically isolated with respect to areas of the layers not located below the emitting surface (13) by means of first deep implanted regions (12.1) irradiated with electric charge carriers.Type: ApplicationFiled: March 31, 2011Publication date: January 31, 2013Inventors: Bernd Kloth, Vera Abrosimova, Torsten Trenkler
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Publication number: 20130026446Abstract: A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.Type: ApplicationFiled: July 25, 2012Publication date: January 31, 2013Inventors: Sang Heon HAN, Jong Hyun Lee, Jin Young Lim, Dong Ju Lee, Heon Ho Lee, Young Sun Kim, Sung Tae Kim
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Patent number: 8362458Abstract: A nitride semiconductor LED device including an N-type doped layer, an active layer and a P-type doped layer is provided. The active layer is disposed on the N-type doped layer and includes at least one quantum well structure. The quantum well structure includes two quantum barrier layers and a quantum well sandwiched between the quantum barrier layers. The quantum barrier layer is a super-lattice structure including a quaternary nitride semiconductor. The P-type doped layer is disposed on the active layer.Type: GrantFiled: December 27, 2010Date of Patent: January 29, 2013Assignee: Industrial Technology Research InstituteInventors: Ren-Hao Jiang, Chih-Wei Hu
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Patent number: 8362461Abstract: An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower barrier layer, and an upper barrier layer on the central well layer. Each of the layers is a semiconductor layer. One of the barrier layers has a secondary planar quantum well and is located between the planar distribution of dopant atoms and the central well layer. The primary planar quantum well may be undoped or substantially undoped, e.g., intrinsic semiconductor.Type: GrantFiled: May 28, 2010Date of Patent: January 29, 2013Assignee: Alcatel LucentInventors: Kirk William Baldwin, Loren N. Pfeiffer, Kenneth William West
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Publication number: 20130023080Abstract: A chemical vapor deposition (CVD) method includes forming a first semiconductor layer on a substrate that is mounted on a satellite disk at a first process temperature; and forming a second semiconductor layer on the first semiconductor layer at a second process temperature. Also, a method of manufacturing a light-emitting device (LED) includes: forming a quantum well layer on a substrate that is mounted on a satellite disk at a first process temperature; and forming a quantum barrier layer on the quantum well layer at a second process temperature.Type: ApplicationFiled: January 25, 2012Publication date: January 24, 2013Inventors: Bum-joon KIM, Ki-sung Kim, Young-sun Kim, Doek-gil Ko, Jin-young Lim, Eui-joon Jeong
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Publication number: 20130020550Abstract: An electroluminescent device contains (1) first and second electrodes, at least one of which is transparent to radiation; (2) a hole conducting layer containing first nanoparticles wherein the hole conducting layer is in contact with said first electrode; (3) an electron conducting layer containing second nanoparticles where the electron conducting layer is in contact with the hole conducting layer and the second electrode; and optionally (4) a voltage source capable of providing positive and negative voltage, where the positive pole of the voltage source is connected to the first electrode and the negative pole is connected to the second electrode. In some embodiments, the electroluminescent device also includes an electron-hole combination layer between the hole and electron conducting layers.Type: ApplicationFiled: April 20, 2012Publication date: January 24, 2013Applicant: Solexant Corp.Inventor: Damoder Reddy
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Publication number: 20130020551Abstract: A group III nitride semiconductor light emitting device includes an n-type cladding layer and a p-type cladding layer on a primary surface of a substrate, the c-axes of which tilt relative to the normal axis of the primary surface of the substrate. The p-type cladding layer is doped with a p-type dopant providing an acceptor level, and the p-type cladding layer contains an n-type impurity providing a donor level. An active layer is disposed between the n-type cladding layer and the p-type cladding layer. The concentration of the p-type dopant is greater than that of the n-type impurity. The difference (E(BAND)?E(DAP)) between the energy E(BAND) of a band-edge emission peak value in the photoluminescence spectrum of the p-type cladding layer and the energy E(DAP) of a donor-acceptor pair emission peak value in the photoluminescence spectrum is not more than 0.42 electron volts.Type: ApplicationFiled: April 23, 2012Publication date: January 24, 2013Applicant: Sumitomo Electric Industries, Ltd.Inventors: Takumi YONEMURA, Takashi KYONO, Yohei ENYA
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Publication number: 20130020553Abstract: There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced.Type: ApplicationFiled: July 19, 2012Publication date: January 24, 2013Applicant: Samsung Electronics Co., Ltd.Inventors: Sang Heon Han, Do Young Rhee, Jong Hyun Lee, Jin Young Lim, Young Sun Kim
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Publication number: 20130020555Abstract: A nitride-based semiconductor light emitting device includes an anti-bowing layer having a composition of AlxGa1-xN (0.01?x?0.04), and a light emitting structure formed on the anti-bowing layer and including a first conductivity-type nitride semiconductor layer, an active layer, and a second conductivity-type nitride semiconductor layer.Type: ApplicationFiled: July 23, 2012Publication date: January 24, 2013Inventors: Jong Sun Maeng, Bum Joon Kim, Ki Sung Kim, Suk Ho Yoon, Sung Tae Kim
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Publication number: 20130020552Abstract: A semiconductor light-emitting element includes a support substrate, a semiconductor film including a light-emitting layer provided on the support substrate, a surface electrode provided on a light-extraction-surface-side surface of the semiconductor film, and a light-reflecting layer provided between the support substrate and the semiconductor film, forming a light-reflecting surface. The surface electrode includes a first electrode piece and a second electrode piece. The light-reflecting layer includes a reflection electrode including a third electrode piece and a fourth electrode piece. The first electrode piece and the third electrode piece are arranged so as to not overlap when projected onto a projection surface parallel to a principal surface of the semiconductor film, and the shortest distance between the first electrode piece and the fourth electrode piece, is greater than the shortest distance between the first electrode piece and the third electrode piece.Type: ApplicationFiled: July 17, 2012Publication date: January 24, 2013Applicant: STANLEY ELECTRIC CO., LTD.Inventor: Takuya KAZAMA
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Publication number: 20130023079Abstract: Methods of fabricating light emitting diodes using a degas process are described. For example, a method includes providing a partially formed group III-V material layer stack of an LED. Contaminants are removed from the partially formed group III-V material layer stack by a degas process. Formation of the group III-V material layer stack of the LED is then completed.Type: ApplicationFiled: July 18, 2012Publication date: January 24, 2013Inventors: Sang Won Kang, Jiang Lu, Hua Chung, Juno Yu-Ting Huang, Wei-Yung Hsu
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Patent number: 8357922Abstract: A nanodevice, a transistor including the nanodevice, a method of manufacturing the nanodevice, and a method of manufacturing the transistor including the nanodevice are provided. The nanodevice includes a substrate, a mask layer located on the substrate and having at least one opening, and a nanotube formed on the substrate through the opening along an edge of the opening. The nanotube extends through the opening in a direction substantially perpendicular to a surface of the substrate.Type: GrantFiled: February 5, 2008Date of Patent: January 22, 2013Assignee: LG Display Co., Ltd.Inventors: Young-Joon Hong, Gyu-Chul Yi
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Publication number: 20130015427Abstract: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.Type: ApplicationFiled: September 14, 2012Publication date: January 17, 2013Applicant: PANASONIC CORPORATIONInventors: Mitsuaki OYA, Toshiya YOKOGAWA, Atsushi YAMADA, Akihiro ISOZAKI
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Publication number: 20130015426Abstract: A method of manufacturing of a semi-conductor element, comprising the following steps: providing a substrate, the substrate having a surface, the surface being partially coated with a coating and having at least one uncoated area, and growing a truncated pyramid of gallium nitride on the uncoated area, wherein the method comprises the following step: growing at least one gallium nitride column on the truncated pyramid.Type: ApplicationFiled: July 13, 2012Publication date: January 17, 2013Applicant: Technische Universität Braunschweig Carolo-WilhelminaInventors: Andreas Waag, Xue Wang, Shunfeng Li
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Publication number: 20130015425Abstract: A light-emitting element includes a substrate; a first light-emitting stacked layer formed on the substrate; a tunneling layer formed on the first light-emitting stacked layer; a second light-emitting stacked layer formed on the tunneling layer; and a contact layer formed on the second light-emitting stacked layer.Type: ApplicationFiled: July 11, 2012Publication date: January 17, 2013Inventors: Yi-Chieh Lin, Rong-Ren Lee
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Publication number: 20130016499Abstract: An optical device and an LED package using the same, and a backlight apparatus are provided, the optical device including a substrate, a first transparent thin film layer formed at one surface of the substrate, a quantum dot layer formed at an upper surface of the first transparent thin film layer and made of quantum dot particles, a protective layer formed on at least one of an upper surface or a bottom surface of the quantum dot layer and formed with metallic oxide nano particles, and a barrier member formed on the upper surface of the first transparent thin film layer for establishing an area formed with the quantum dot layer and the protective layer.Type: ApplicationFiled: December 7, 2011Publication date: January 17, 2013Inventors: Young Joo Yee, Ki Chang Song
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Patent number: 8350250Abstract: A nitride-based light emitting device capable of achieving an enhancement in light emission efficiency and an enhancement in reliability is disclosed. The nitride-based light emitting device includes a first-conductivity semiconductor layer, a second-conductivity semiconductor layer, an active layer arranged between the first-conductivity semiconductor layer and the second-conductivity semiconductor layer, the active layer including at least one pair of a quantum well layer and a quantum barrier layer, a plurality of first layers arranged on at least one of an interface between the first-conductivity semiconductor layer and the active layer and an interface between the second-conductivity semiconductor layer and the active layer, the first layers having different energy band gaps or different thicknesses, and second layers each interposed between adjacent ones of the first layers, the second layers exhibiting an energy band gap higher than the energy band gaps of the first layers.Type: GrantFiled: July 25, 2007Date of Patent: January 8, 2013Assignee: LG Electronics Inc.Inventors: Jong Wook Kim, Bong Koo Kim
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Publication number: 20130001512Abstract: A nitride group semiconductor light emitting device includes a substrate, n-type and p-type semiconductor layers, and an active region. The n-type and p-type semiconductor layers are formed on or above the substrate. The active region is interposed between the n-type and p-type semiconductor layers. The active region includes barrier layers that are included in a multiquantum well structure, and an end barrier layer that has a thickness greater than the barrier layer, and is arranged closest to the p-type semiconductor layer. The average thickness of the last two barrier layers that are arranged adjacent to the end barrier layer is smaller than the average thickness of the other barrier layers among the thicknesses of the barrier layers that are included in the multiquantum well structure.Type: ApplicationFiled: March 3, 2011Publication date: January 3, 2013Applicant: NICHIA CORPORATIONInventor: Yasuhisa Kotani
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Publication number: 20130001513Abstract: A nitride-based semiconductor device includes: a semiconductor multilayer structure 20 including a p-type GaN-based semiconductor region whose surface 12 is inclined by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 that is provided on the p-type semiconductor region. The p-type semiconductor region is made of an AlxInyGazN (where x+y+z=1, x?0, y?0, and z?0) layer 26. The electrode 30 includes a Zn layer 32, and the Zn layer 32 is in contact with the surface of the p-type semiconductor region of the semiconductor multilayer structure 20.Type: ApplicationFiled: September 11, 2012Publication date: January 3, 2013Applicant: PANASONIC CORPORATIONInventors: Toshiya YOKOGAWA, Mitsuaki OYA, Atsushi YAMADA, Akihiro ISOZAKI
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Publication number: 20130001510Abstract: An optoelectronic device includes a conductive base, a reflective conductive layer on the conductive base, a first semiconductor layer on the conductive layer configured as a first confinement layer, an active layer on the first semiconductor layer configured to emit electromagnetic radiation, a second semiconductor layer on the active layer configured as a second confinement layer, an electrode on the second semiconductor layer, and a current blocking structure on the reflective conductive layer comprising a thin transparent insulation layer aligned with the electrode configured to block current flow from the electrode, to dissipate heat generated at an interface between the first semiconductor layer and the reflective conductive layer, and to transmit electromagnetic radiation reflected from the reflective conductive layer,Type: ApplicationFiled: June 28, 2012Publication date: January 3, 2013Applicant: SEMILEDS OPTOELECTRONICS CO., LTD.Inventors: CHEN-FU CHU, FENG-HSU FAN
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Publication number: 20130005065Abstract: Solid state lighting (“SSL”) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material having a first surface and a second surface opposite the first surface. The semiconductor material has an aperture extending into the semiconductor material from the first surface. The light emitting diode also includes an active region in direct contact with the semiconductor material, and at least a portion of the active region is in the aperture of the semiconductor material.Type: ApplicationFiled: September 12, 2012Publication date: January 3, 2013Applicant: Micron Technology, Inc.Inventors: Scott Sills, Lifang Xu, Scott Schellhammer, Thomas Gehrke, Zaiyuan Ren, Anton De Villiers
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Publication number: 20130001509Abstract: A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer.Type: ApplicationFiled: June 26, 2012Publication date: January 3, 2013Applicant: Sharp Kabushiki KaishaInventors: Mayuko FUDETA, Satoshi KOMADA, Ryu KAIHARA
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Publication number: 20120326118Abstract: In one embodiment, a semiconductor light emitting device includes a substrate, an electrically-conductive reflection film, an active region, a first electrode, a transparent conductive film and a second electrode. In the active region, a first transparent electrode, a first conductivity type contact layer, a light emitting layer, a second conductivity type contact layer and a second transparent electrode are formed and stacked on the electrically-conductive reflection film. The first electrode is provided away from the active region on the electrically-conductive reflection film. One end of the transparent conductive film is provided to cover the upper portion of the second transparent electrode, while the other end of the transparent conductive film is provided above the electrically-conductive reflection film through an insulating film. The transparent conductive film is in contact with a lateral surface of the active region through the insulating film.Type: ApplicationFiled: February 17, 2012Publication date: December 27, 2012Applicant: Kabushiki Kaisha ToshibaInventor: Koichi Nitta
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Publication number: 20120326121Abstract: There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards. When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.Type: ApplicationFiled: September 4, 2012Publication date: December 27, 2012Inventors: Dong Ju LEE, Hyun Wook Shim, Heon Ho Lee, Young Sun Kim, Sung Tae Kim
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Publication number: 20120326120Abstract: A transparent LED wafer module and a method for manufacturing the same are provided. In a conductor LED device epitaxial process, the conductor LED device is grown on a transparent material wafer, where both surfaces of the conductor LED device are entirely grown on the transparent material, and then a transparent glass substrate is restacked, thereby securing a high amount of light.Type: ApplicationFiled: February 25, 2011Publication date: December 27, 2012Inventor: Sung-Bok Shin
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Patent number: 8338820Abstract: According to one embodiment, a semiconductor light emitting device includes a first conductivity type semiconductor layer, a light emitting layer and a second conductivity type semiconductor layer. The first conductivity type layer has a superlattice structure. First semiconductor layers and second semiconductor layers are alternately provided in the superlattice structure. The first semiconductor layers include a first nitride semiconductor and the second semiconductor layers include a second nitride semiconductor having a larger lattice constant than the first nitride semiconductor. The light emitting layer has a multi-quantum well structure. Quantum well layers and barrier layers are alternately provided in the multi-quantum well structure. The quantum well layers include a third nitride semiconductor having a smaller lattice constant than the second nitride semiconductor and the barrier layers include a fourth nitride semiconductor having a smaller lattice constant than the third nitride semiconductor.Type: GrantFiled: August 11, 2011Date of Patent: December 25, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Takuo Kikuchi, Hidehiko Yabuhara
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Publication number: 20120319081Abstract: The present invention relates to a multi-luminous element and a method for manufacturing the same. The present invention provides the multi-luminous element comprising: a buffer layer disposed on a substrate; a first type semiconductor layer disposed on the buffer layer; a first active layer which is disposed on the first type semiconductor layer and is patterned to expose a part of the first type semiconductor layer; a second active layer disposed on the first type semiconductor layer which is exposed by the first active layer; and a second type semiconductor layer disposed on the first active layer and the second active layer, the first and second active layers being repeatedly disposed in the horizontal direction, and the method for manufacturing the same.Type: ApplicationFiled: March 15, 2011Publication date: December 20, 2012Applicant: KOREA PHOTONICS TECHNOLOGY INSTITUTEInventors: Seong Ran Jeon, Jae Bum Kim, Seung Jae Lee
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Publication number: 20120322191Abstract: There is provided a method of fabricating a semiconductor light emitting device, including: forming a sacrificial layer having a plurality of nanostructures on a growth substrate; forming a protective layer to cover the sacrificial layer; forming a light emitting structure by allowing a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer to be sequentially grown on the protective layer; etching the protective layer to expose the nanostructures; and separating the light emitting structure from the growth substrate by etching the exposed nanostructures, whereby damage and degradation of a light emitting structure at the time of the separation thereof may be prevented.Type: ApplicationFiled: June 11, 2012Publication date: December 20, 2012Inventors: Jong Hyun Lee, Dong Ju Lee, Young Sun Kim
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Publication number: 20120319080Abstract: Disclosed is a nitride semiconductor light-emitting element comprising a p-type nitride semiconductor layer 1, a p-type nitride semiconductor layer 2, and a p-type nitride semiconductor layer 3 placed in order above a nitride semiconductor active layer, wherein the p-type nitride semiconductor layer 1 and p-type nitride semiconductor layer 2 each contain A1, the average A1 composition of the p-type nitride semiconductor layer 1 is equivalent to the average A1 composition of the p-type nitride semiconductor layer 2, the p-type nitride semiconductor layer 3 has a smaller band gap than the p-type nitride semiconductor layer 2, the p-type impurity concentration of the p-type nitride semiconductor layer 2 and the p-type impurity concentration of the p-type nitride semiconductor layer 3 are both lower than the p-type impurity concentration of the p-type nitride semiconductor layer 1, and a method for producing same.Type: ApplicationFiled: February 17, 2011Publication date: December 20, 2012Inventors: Mayuko Fudeta, Eiji Yamada
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Publication number: 20120319079Abstract: Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers.Type: ApplicationFiled: February 24, 2012Publication date: December 20, 2012Inventors: Dae Seob HAN, Yong Tae Moon, Jong-In Shim
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Publication number: 20120313076Abstract: A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device.Type: ApplicationFiled: June 11, 2012Publication date: December 13, 2012Applicant: The Regents of the University of CaliforniaInventors: Shuji Nakamura, Steven P. DenBaars, Shinichi Tanaka, Daniel F. Feezell, Yuji Zhao, Chih-Chien Pan