Abstract: Provided are a light-emitting element and a light-emitting device, and methods of fabricating the same. The method of fabricating a light-emitting element includes forming a buffer layer on a substrate and forming photonic crystal patterns and a pad pattern on the buffer layer. Each of the pad pattern and the photonic crystal patterns are made of a metal material, and the pad pattern is physically connected to the photonic crystal patterns. Forming a light-emitting structure includes sequentially stacking a first conductive pattern of a first conductivity type, a light-emitting pattern, and a second conductive pattern of a second conductivity type on the buffer layer. And the method also includes forming a first electrode that is electrically connected to the first conductive pattern and forming a second electrode that is electrically connected to the second conductive pattern.

Abstract: A light-emitting device structure comprises a substrate having a first region and a second region outside the first region, a first conductive type semiconductor layer positioned on the first region, a light-emitting structure positioned on the first conductive type semiconductor layer, a second conductive type semiconductor layer positioned on the light-emitting structure, and a wall structure positioned on the second region.

Abstract: A lead frame comprises on a same plane, a pad part including an LED chip mounting upper surface A on which at least an LED chip is to be mounted, and a lead part including an electric connection area C in which an electric connection with the LED chip is made. A relationship between an area S1 of the mounting upper surface of the pad part 2 and an area S2 of a radiating lower surface opposite to the mounting upper surface is represented by 0<S1<S2. Side surfaces of the pad part between the mounting upper surface and the radiating lower surface are provided with stepped parts or tapered parts which spread in a direction from the mounting upper surface toward the radiating lower surface and hold a resin-filled during molding.

Abstract: A light emitting device may include a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. A first electrode including a plurality of openings may be provided on the light emitting structure. A filling factor, which is an area ratio of the first electrode relative to an area of a top surface of the light emitting structure, may be 20% or less.

Abstract: A light emitting diode (LED) structure and a LED packaging structure are disclosed. The LED structure includes a sub-mount, a stacked structure, an electrode, an isolation layer and a conductive thin film layer. The sub-mount has a first surface and a second surface opposite the first surface. The stacked structure has a first semiconductor layer, an active layer and a second semiconductor layer that are laminated on the first surface. The electrode is disposed apart from the stacked structure on the first surface. The isolation layer is disposed on the first surface to surround the stacked structure as well as cover the lateral sides of the active layer. The conductive thin film layer connects the electrode to the stacked structure and covers the stacked structure.

Abstract: A light emitting device including a sapphire layer and a light emitting layer formed on the sapphire layer. The sapphire layer has a polygonal sectional shape whose internal angle is an obtuse angle, such as a regular hexagonal shape. Light emitted from the light emitting layer is totally reflected on one side surface of the sapphire layer and next transmitted through another side surface of the sapphire layer.

Abstract: A light emitting device according to the embodiment includes a reflecting layer; an adhesion layer including an oxide-based material on the reflecting layer; an ohmic contact layer on the adhesion layer; and a light emitting structure layer on the ohmic contact layer.

Abstract: The invention discloses a semiconductor light-emitting device. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, at least one electrode structure, and a light reflector. The substrate has an upper surface. The multi-layer structure is formed on the upper surface of the substrate. The multi-layer structure includes a light-emitting region and at least one semiconductor material layer. The multi-layer structure also has a top surface. The at least one electrode structure is formed on the top surface of the multi-layer structure. The light reflector is formed on the top surface of the multi-layer structure.

Abstract: A light emitting diode structure and a light emitting diode structure forming method are provided. The light emitting diode structure includes a base, a diode chip, and a package lens. The diode chip is mounted on the base. The package lens covers the diode chip. The surface of the package lens includes a plurality of dot structures. The steps of the method include mounting a light-emitting diode chip on a base, assembling a package lens to cover the light emitting diodes chip, and forming a plurality of dot structures on the surface of the package lens.

Abstract: An (Al, Ga, In)N light emitting diode (LED), wherein light extraction from chip and/or phosphor conversion layer is optimized. By novel shaping of LED and package optics, a high efficiency light emitting diode is achieved.

Abstract: A photoconductor device and a method of manufacturing the same are provided. The photoconductor device includes a photoconductor substrate, a photoconductor thin film deposited on the photoconductor substrate, and a photoconductive antenna electrode formed on the photoconductor thin film. The photoconductor thin film includes polycrystalline GaAs.

Abstract: A method of manufacturing light emitting diode has steps of providing a package base, providing a light emitting structure and bonding the light emitting structure on the package base. The package base has a first metal layer and a second metal layer respectively formed on a top and a bottom thereon. The light emitting structure has a substrate, a light emitting lamination and a reflective metal layer. The light emitting lamination is formed on the substrate and has an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer and a transparent electrode layer deposited on the substrate in sequence. The reflective metal layer is formed on a bottom of the substrate. The first metal layer is connected to the reflective metal layer by an ultrasonic thermal press technique. Therefore, the thermal resistance of the finished LED reduces.

Abstract: An LED includes a substrate, an LED die, and a packaging layer. The substrate has conductive pins extending therethrough. The LED die is arranged on the substrate and electronically connected to the conductive pins of the substrate. The packaging layer fills in the substrate to encapsulate the LED die therein. A plurality of fillers are distributed in the packaging layer. Each of the fillers has a plurality of nano-particles distributed therein for enhancing a light dispersion of light generated by the LED die.

Abstract: An organic electroluminescent device including an organic thin-film transistor element having at least an active layer made of an organic material; and an organic electroluminescent element driven by the organic thin-film transistor element.

Abstract: A submount for an LED has relatively large copper pads formed on its top surface using an electroless process so that no electrical bias circuitry is required for the submount. The copper pads are then coated with nickel using an electroless process. The nickel layer is then coated with silver using an electroless process, such as an immersion silver process. In one embodiment, the silver layer is less than one micron thick. The Ni layer prevents a reduction in reflectivity of the Ag after long periods of use while conducting the high current (300 mA to >1 amp) needed for high power LEDs. The silver layer surrounds at least 75% of the periphery of the LED die and extends at least 1 mm around the periphery of the die to reflect the LED light.

Abstract: An integrated device includes an optical element and an electrical element that are implemented on a substrate. The optical element and the electrical element are bonded by surface-activated bonding technology to a bonding portion that is formed on the substrate and made of metal material.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and a transmissive conductive layer at least one part between the second conductive semiconductor layer and the second electrode layer.

Abstract: An electrically pumped lateral emission electroluminescent device may include a slotted waveguide including a top silicon layer having a thickness between 150 nm and 300 nm and a refraction index associated therewith, and a bottom silicon layer having a thickness between 150 nm and 300 nm and a refraction index associated therewith. A core layer may include silicon oxide between the top and bottom layers and a thickness less than 70 nm. A core layer refraction index may be greater than each of the top and bottom layer refraction indices. A core layer portion may be in a direction of light propagation and may be doped with erbium, and may include silicon nanocrystals. A portion of each of the top and bottom layers may coincide with the core layer portion and may be doped so that the top and bottom layer portions are electrically conductive to define top and bottom plates.

Abstract: A display panel includes a substrate and a light emitting element array including a plurality of light emitting elements provided on the substrate. The light emitting elements are driven by driving signals to emit light. The display panel further includes a lens array that focuses the light emitted by the light emitting elements, and a driving circuit provided on the substrate for driving the light emitting elements. The lens array includes a plurality of lens pillars formed on the light emitting elements, and a plurality of lens portions formed to cover the lens pillars and to have curved lens surfaces.

Abstract: A light-emitting device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped layer and a first passivation layer situated between the first electrode and the first doped layer in areas other than an ohmic-contact area. The first passivation layer substantially insulates the first electrode from edges of the first doped layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped layer and a second passivation layer which substantially covers the sidewalls of the first and second doped layers, the MQW active layer, and the horizontal surface of the second doped layer.

Abstract: Provided is a liquid crystal display including a transparent pixel electrode and a transparent common electrode in a pixel region to drive liquid crystals. The transparent common electrode includes a plurality of slits and is configured to open at least a portion of a switching device to connect unit pixels, the slits have an angle of 5 to 10° with respect to a gate line, and a rubbing direction of a liquid crystal layer is substantially parallel to a gate direction. Therefore, it is possible to provide the liquid crystal display capable of removing factors decreasing an aperture ratio, preventing light from leaking, and further improving internal reflection.

Abstract: Disclosed is a light emitting device. The light emitting device includes a support substrate; a planar layer over the support substrate; a wafer bonding layer over the planar layer; a current spreading layer over the wafer bonding layer; a second conductive semiconductor layer over the current spreading layer; an active layer over the second conductive semiconductor layer; a first conductive semiconductor layer over the active layer; a first electrode layer over the first conductive semiconductor layer; and a second electrode layer over the current spreading layer.

Abstract: An edge LED package includes a base, an LED die and a reflective cup. The LED die is located on a surface of the base. The reflective cup includes an inner sidewall surrounding the LED die. The inner sidewall inclines outward from the base to form an included angle from 140 to 150°. The depth of the reflective cup, measured vertically from top of the reflective cup to the bottom, is about 0.25 mm to 0.3 mm. The area ratio between the opening area of the reflective cup and the base area surrounded by the reflective cup is about 1.5 to 2.

Abstract: A high output light emitting diode (LED) and a method for fabricating the LED is disclosed. The LED includes a sidewall or surface that is inclined. A reflective film is formed on the inclined sidewall or surface to allow light to reflect from the reflective film and to emit the light upward or in a favorable direction with respect to the device, thereby being configured and enabled to improve a light output of the LED and dispense with an additional passivation process.

Abstract: A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.

Abstract: A light-emitting diode (LED) package structure includes a LED chip, an interconnecting substrate, a first conductive lead and a second conductive lead. The LED chip is provided with first and second electrical contacts formed on the same side thereof. The upper surface of the interconnecting substrate is provided with two conductive traces and first, second, third and fourth conductive pads. The first and second conductive pads are electrically connected to the third and fourth conductive pads by the two conductive traces, respectively. The first and second conductive leads are directly soldered to the third and fourth conductive pads, respectively. The LED chip is mounted onto the upper surface of the interconnecting substrate in a flip-chip configuration so that the first and second conductive pads thereof are mechanically and electrically connected to the first and second electrical contacts, respectively.

Abstract: An organic light emitting display is disclosed. The display comprises a transistor with an active layer comprising an oxide semiconductor material. The oxide semiconductor material has conductivity suitable for the transistor because of a diffusion path allowing hydrogen to escape from the active layer.

Abstract: A light emitting module comprises a light emitting device (LED) mounted on a high thermal dissipation sub-mount, which performs the traditionally function of heat spread and the first part of the heat sinking. The sub-mount is a grown metal that is formed by an electroplating, electroforming, electrodeposition or electroless plating process, thereby minimising thermal resistance at this stage. An electrically insulating and thermally conducting layer is at least partially disposed across the interface between the grown semiconductor layers of the light emitting device and the formed metal layers of the sub-mount to further improve the electrical isolation of the light emitting device from the grown sub-mount. The top surface of the LED is protected from electroplating or electroforming by a wax or polymer or other removable material on a temporary substrate, mould or mandrel, which can be removed after plating, thereby releasing the LED module for subsequent processing.

Abstract: Provided is a package of a light emitting diode. The package includes a metal plate, a light-emitting diode chip, an insulating layer, a lead frame, a reflective coating layer, and a molding material. The light-emitting diode chip is surface-mounted on the metal plate, and the insulating layer is formed on the metal plate and is separated from the light-emitting diode chip. The lead frame is provided on the insulating layer, the reflective coating layer is formed on the lead frame, and the molding material molds the light-emitting diode chip in a predetermined shape.

Abstract: A method for the manufacture of a light emitting device is provided. The method comprises the steps of: providing a substrate (102) on which at least one light emitting diode (101) is arranged and; arranging a collimator (103), at least partly laterally surrounding said at least one light emitting diode, by bonding said collimator to said at least one light emitting diode and said substrate using a transmissive bonding material (104). By using the inventive method, the collimator can be arranged after the placement of the LED, which facilitates the placement of the LED.

Abstract: A light emitting device (LED) package includes a submount and a light emitting chip. The submount has a chip region and a supporting region over which the chip is mounted, and an encapsulating material and fluorescent material are formed over the chip. The coverage area of encapsulating and fluorescent materials is substantially coextensive with the chip or chip region, and a first area between an edge of the chip region and an edge of the supporting region is greater than a second area between the edge of the chip region and the chip.

Abstract: An optical device for improving conduction and reflectivity and minimizing absorption. The optical device includes a first mirror comprising a first plurality of mirror periods designed to reflect an optical field at a predetermined wavelength, where the optical field has peaks and nulls. Each of the plurality of mirror periods includes a first layer of having a high carrier mobility, a second layer having lower carrier mobility, and a first compositional ramp between the first and second layers. The thicknesses of the first and second layers for at least a portion of the first plurality of mirror periods are established such that the nulls of the optical field occur within the first layer and not within the compositional ramp. At least the portion of the first layers within the first plurality of mirror periods include elevated doping concentrations at locations of the nulls of the optical field.

Abstract: Provided are a light emitting device and a light emitting device package. The light emitting device comprises a light emitting structure comprising a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; a first electrode on the first conductive type semiconductor layer, the first electrode being electrically connected to the first conductive type semiconductor layer; a plurality of reflective islands on the second conductive type semiconductor layer; a second electrode on the second conductive type semiconductor layer and the plurality of reflective islands, the second electrode being electrically connected to the second conductive type semiconductor layer; and a conductive support member on the second electrode.

Abstract: As a wiring becomes thicker, discontinuity of an insulating film covering the wiring has become a problem. It is difficult to form a wiring with width thin enough for a thin film transistor used for a current high definition display device. As a wiring is made thinner, signal delay due to wiring resistance has become a problem. In view of the above problems, the invention provides a structure in which a conductive film is formed in a hole of an insulating film, and the surfaces of the conductive film and the insulating film are flat. As a result, discontinuity of thin films covering a conductive film and an insulating film can be prevented. A wiring can be made thinner by controlling the width of the hole. Further, a wiring can be made thicker by controlling the depth of the hole.

Abstract: A light emitting diode array including apertures, a line printer head using the light emitting diode array, and a method of manufacturing the light emitting diode array. The light emitting diode array includes the apertures that are formed in a substrate and restrict tunnels of light emitted from a plurality of light emitting diodes. Also, a lens that refracts the light transmitted through the plurality of apertures is included.

Abstract: The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.

Abstract: An LED package structure includes a house, an LED chip, a transparent cover, and a surrounding wall. The house has an upper surface, a cavity exposed by the upper surface, and a surrounding plane. The LED chip is disposed on the bottom surface of the cavity. The transparent cover is disposed on the surrounding plane and the opening of the cavity is sealed by the transparent cover. The surrounding wall is disposed on the upper surface of the house and surrounds the transparent cover.

Abstract: The invention discloses a light-emitting diode which comprises a substrate, a first conducting-type semiconductor layer, plural pillars, a transparent insulating material, an illuminating layer, a second conducting-type semiconductor layer, a first transparent conducting layer and a second transparent conducting layer. The first conducting-type semiconductor layer is formed on the substrate, and the top surface of the first conducting-type semiconductor layer comprises a first region and a second region surrounded by the first region. The pillars are formed on the first region. The transparent insulating material is filled in the gaps between the pillars to be as high as the pillars. The illuminating layer is formed on the second region, and the second conducting-type semiconductor layer is formed on the illuminating layer.

Abstract: A semiconductor light-emitting device includes a light-impervious substrate, a bonding structure, a semiconductor light-emitting stack, and a fluorescent material structure overlaying the semiconductor light-emitting stack. The semiconductor light-emitting stack is separated from a growth substrate and bonded to the light-impervious substrate via the bonding structure. A method for producing the semiconductor light-emitting device includes separating a semiconductor light-emitting stack from a growth substrate, bonding the semiconductor light-emitting stack to a light-impervious substrate, and forming a fluorescent material structure over the semiconductor light-emitting stack.

Abstract: In a laser chip 1 using a nitride semiconductor having a hexagonal crystal structure, the ?c plane is used as a first resonator facet A, which is the side of the laser chip 1 through which light is emitted. On the first resonator facet A, that is, on the ?c plane, a facet protection film 14 is formed. This ensures firm joint between the first resonator facet A and the facet protection film 14 and alleviates deterioration of the first resonator facet A.

Abstract: An illumination device is specified which comprises an optoelectronic component having a housing body and at least one semiconductor chip provided for generating radiation, and a separate optical element, which is provided for fixing at the optoelectronic component and has an optical axis, the optical element having a radiation exit area and the radiation exit area having a concavely curved partial region and a convexly curved partial region, which at least partly surrounds the concavely curved partial region at a distance from the optical axis, the optical axis running through the concavely curved partial region.

Abstract: A light emitting diode comprises a heat conductive layer, a semiconductor layer disposed above the heat conductive substrate and consisting of a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a transparent electrode layer, a current blocking layer and an electrode contact pad. The p-type semiconductor layer has first concaves located on its surface distant from the active layer. The n-type semiconductor layer has second concaves located on its surface distant from the active layer. The transparent electrode layer is located on the surface of the n-type semiconductor layer except the second concaves. The current blocking layer is located in the first concaves of the p-type semiconductor layer. The electrode contact pad is located on the surface of the transparent electrode layer. The density of the second concaves decrease with distance from the electrode contact pad.

Abstract: Provided is a light emitting diode device. The light emitting diode device includes a light emitting diode chip having a first surface on which first and second electrodes are disposed, and a second surface opposing the first surface, a wavelength conversion portion including fluorescent substances and covering the first surface and side surfaces of the light emitting diode chip, wherein the side surfaces denote surfaces placed between the first and second surfaces, and first and second electricity connection portions each including a plating layer, respectively connected to the first and second electrodes, and exposed to the outside of the wavelength conversion portion. Accordingly, the light emitting diode device, capable of enhancing luminous efficiency and realizing uniform product characteristics in terms of the emission of white light, is provided. Further, a process for easily and efficiently manufacturing the above light emitting diode device is provided.

Abstract: A light-emitting diode structure includes a base with a recessed portion, a light-emitting chip and a light-transmissive block. The light-emitting chip disposed in the recessed portion of the base and emits a light beam. The light-transmissive block disposed on the base covers the recessed portion and the light-emitting chip, so that the light beam emitted from the light-emitting chip is radiated outwardly via the light-transmissive block. The light-transmissive block is a flat-top multilateral cone including a bottom surface, a top surface, and several side surfaces connected to and located between the bottom surface and the top surface. A slot with a bottom portion is formed on the top surface of the light-transmissive block.

Abstract: In one aspect of the invention, an LED includes a substrate, an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer and a transparent conductive layer sequentially stacked on the substrate, and p-type and n-type electrodes. The p-type semiconductor layer has a rough surface region and at least one flat surface region. The transparent conductive layer has a rough surface region and a flat surface region corresponding to the rough surface region and the at least one flat surface region of the p-type semiconductor layer, respectively. The p-type electrode is disposed on the flat surface region of the transparent conductive layer. The n-type electrode is electrically couple to the n-type semiconductor layer.

Abstract: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.

Abstract: A light emitting diode array in which, when viewed from the above, the shape of an almost square light emitting diode is square-chamfered or round-chamfered at the corners thereof in order to minimize light leakage at a reverse mesa surface to allow an electrode layer to surround the three directions of a light emitting unit, and part in the vicinity of the corner of the reverse mesa surface is extended up to a substrate unit to cover it. Accordingly, the light emitting diode array minimized in light leakage at the reverse mesa surface can be provided.

Abstract: A method for fabricating a photoelectric device initially provides a ceramic substrate comprising a thermal dissipation layer on a bottom layer of the ceramic substrate, an electrode layer on the top surface of the ceramic substrate, and a reflective structure in cavities of the ceramic substrate. Next, a plurality of photoelectric dies is disposed on the top surface of the ceramic substrate. Then, a first packaging layer is formed on the top surfaces of the photoelectric dies. Next, the ceramic substrate is placed between an upper mold and a lower mold. Finally, a plurality of lenses is formed on the top surface of the first packaging layer by using an injection molding technique or a transfer molding technique.

Abstract: Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate, in which concave-convex patterns are in at least a portion of a backside of the substrate, and a light emitting structure on the substrate and comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer; and an insulating layer on an outer peripheral surface of at least two layers of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer.