Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a second electrode layer, a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on the second electrode layer, a reflective member spaced apart from the light emitting semiconductor layer on the second electrode layer, and a first electrode layer on the first conductive semiconductor layer.

Abstract: A vertical GaN-based LED comprises an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having an irregular-surface structure which includes a first irregular-surface structure having irregularities formed at even intervals and a second irregular-surface structure having irregularities formed at uneven intervals, the second irregular-surface structure being formed on the first irregular-surface structure; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

Abstract: A method of manufacturing an electronic device (10) provides a substrate (20) that has a plastic material and has a metallic coating on one surface. A portion of the metallic coating is etched to form a patterned metallic coating. A particulate material (16) is embedded in at least one surface of the substrate. A layer of thin-film semiconductor material is deposited onto the substrate (20).

Abstract: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.

Abstract: A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.

Abstract: Methods are disclosed for forming a vertical semiconductor light-emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.

Abstract: A light emitting device includes a substrate, at least one electrode, a first contact layer, a second contact layer, a light emitting structure layer, and an electrode layer. The electrode is disposed through the substrate. The first contact layer is disposed on a top surface of the substrate and electrically connected to the electrode. The second contact layer is disposed on a bottom surface of the substrate and electrically connected to the electrode. The light emitting structure layer is disposed above the substrate at a distance from the substrate and electrically connected to the first contact layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The electrode layer is disposed on the light emitting structure layer.

Abstract: A light emitting device having a light extraction structure, which is capable of achieving an enhancement in light extraction efficiency and reliability, and a method for manufacturing the same. The light emitting device includes a semiconductor layer having a multi-layered structure including a light emission layer; and a light extraction structure formed on the semiconductor layer in a pattern having unit structures. Further, the wall of each of the unit structures is sloped at an angle of ?45° to +45° from a virtual vertical line being parallel to a main light emitting direction of the light emitting device.

Abstract: A light-emitting diode arrangement is disclosed, comprising at least one light-emitting diode (LED) chip with a radiation decoupling surface through which a large portion of the electromagnetic radiation generated in the LED chip exits in a main direction of emission; a housing laterally surrounding the LED chip; and a reflective optic disposed after the radiation decoupling surface in the main direction of emission. The LED arrangement is particularly well suited for use in devices such as camera-equipped cell phones, digital cameras or video cameras.

Abstract: A light-emitting device according to an embodiment includes: a blue color LED including a first principal surface, a second principal surface and a side surface, the blue color LED producing light; and a package portion in which a recess portion, which is a light shield portion accommodating the blue color LED with no gap on the side surface side, thereby preventing release of the light from the side surface, is formed.

Abstract: A package system includes a substrate having at least one first thermally conductive structure through the substrate. At least one second thermally conductive structure is disposed over the at least one first thermally conductive structure. At least one light-emitting diode (LED) is disposed over the at least one second thermally conductive structure.

Abstract: Disclosed herein is an organic light emitting diode device, including: an organic EL element layer; an electrode layer supplying power to the organic EL element layer; and a metal nanocluster layer which is formed by covering a plurality of metal clusters with media and which is located between the organic EL element layer and the electrode layer to induce a luminescence enhancement effect. The organic light emitting diode device is advantageous in that carriers can be easily injected, so that light output efficacy is improved, thereby enhancing fluorescent emission output.

Abstract: A light emitting device according to the embodiment includes a conductive support member; a light emitting structure on the conductive support member including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second semiconductor layers; and a protective device on the light emitting structure.

Abstract: The semiconductor light-emitting device (11) of the present invention includes a substrate (1); a laminate semiconductor layer (15) comprised of an n-type semiconductor layer (3) formed on the substrate (1), a light-emitting layer (4) laminated on the n-type semiconductor layer (3) and a p-type semiconductor layer (5) laminated on the light-emitting layer (4); a concavo-convex part (33) for improving a light extraction efficiency, which is formed on all or a part of a top surface (15a) of the laminate semiconductor layer (15); a high-concentration p-type semiconductor layer (8) having a higher dopant concentration than that of the p-type semiconductor layer (5), which is laminated on a convex part (33a) that constitutes the concavo-convex part (33) of the laminate semiconductor layer (15); and a translucent current diffusion layer (20) laminated on at least the high-concentration p-type semiconductor layer (8).

Abstract: A light emitting diode assembly is disclosed in the present invention. The light emitting diode assembly has a substrate and several light emitting diode units. It can also include several light emitting diode units fabricated on cavities formed in the substrate. Any light emitting diode unit is composed of a light emitting diode chip covered with a phosphor layer for providing light beams, and a reflecting unit installed or formed on the substrate, coated with a reflective film, surrounding the light emitting diode chip for reflecting the light beams emitted from the light emitting diode chip, and directing the light beams upward. The light emitting diode unit further includes a light condenser provided above the light emitting diode chip for guiding the light beams upward. The assembly can collect all light beams emitted laterally. Hence, lighting efficiency for the light emitting diode assembly can be improved.

Abstract: A method for forming a light emitting diode includes: (a) growing epitaxially an epitaxial film over an epitaxial substrate; (b) roughening an upper surface of the epitaxial film; (c) forming a top electrode on the roughened upper surface of the epitaxial film; (d) detachably attaching a temporary substrate over the roughened upper surface of the epitaxial film; (e) roughening the lower surface of the epitaxial film; (f) disposing the roughened lower surface of the epitaxial film on a reflective top surface of an electrically conductive permanent substrate; (g) filling an optical adhesive in a gap between the roughened lower surface of the epitaxial film and the reflective top surface of the permanent substrate; and (h) after the step (g), removing the temporary substrate from the epitaxial film.

Abstract: Provided is a light emitting device. A light emitting device includes: a conductive support member; a light emitting structure for generating a light on the conductive support member, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer; an electrode on the light emitting structure; and an oxide layer between the electrode and the light emitting structure. The light emitting structure includes an oxygen-injected region where oxygen is injected on an upper portion of the light emitting structure.

Abstract: To improve light extraction efficiency of a light emitting device, the light emitting device includes: a first electrode; a second electrode provided on a light extraction side; an emission layer formed between the first electrode and the second electrode; a reflection surface located on the first electrode with respect to the emission layer; and a periodic structure at a node of interference generated by light emitted from the emission layer and light emitted from the emission layer to the reflection surface side and reflected on the reflection surface. The periodic structure is for diffracting light generated in the emission layer and guided in an in-plane direction of the light emitting device in a direction to the second electrode, and for extracting the light to the outside of the light emitting device.

Abstract: A reflective structure is fabricated for a light emitting diode (LED). An ohmic contact layer of the LED is made into a netlike structure. Thus, a current is evenly distributed and a low contact resistance is remained. Furthermore, the reflective layer directly reflects light through holes of the netlike structure on emitting light. Thus, a reflectivity of the LED is enhanced.

Abstract: Disclosed is a nitride-based semiconductor light emitting device with excellent light extraction efficiency. A light emitting device 11 includes a support base 13 and a semiconductor laminate 15. The semiconductor laminate 15 includes an n-type GaN-based semiconductor region 17, an active layer 19, and a p-type GaN-based semiconductor region 21. The n-type GaN-based semiconductor region 17, the active layer 19, and the p-type GaN-based semiconductor region 21 are mounted on a principal surface 13a, and are arranged in the direction of a predetermined axis Ax orthogonal to the principal surface 13a. A rear surface 13b of the support base 13 is inclined with respect to a plane orthogonal to a reference axis extending in the c-axis direction of a hexagonal gallium nitride semiconductor of the support base 13. A vector VC represents the c-axis direction. A surface morphology M of the rear surface 13b has a plurality of protrusions 23 protruding in the direction of a <000-1>-axis.

Abstract: A plurality of reflective nanometer-structures formed on the reflective surface of a semiconductor light emitting device package increases light emitting efficiency. Every pitch between each reflective nanometer-structure has an interval P shorter than the half wavelength of the visible light. Moreover, each of the plurality of reflective nanometer-structures has a depth H, wherein the ratio of the depth H over the interval P is not less than 2.

Abstract: Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a sub-mount including a cavity, a light emitting device chip provided in the cavity, an electrode electrically connected to the light emitting chip, a reflective layer formed on a surface of the cavity, a dielectric pattern on the reflective layer, and an encapsulant filled in the cavity.

Abstract: An optoelectronic thin-film chip is specified, comprising at least one radiation-emitting region (8) in an active zone (7) of a thin-film layer (2) and a lens (10, 12) disposed downstream of the radiation-emitting region (8). The lens is formed by at least one partial region of the thin-film layer (2), the lateral extent (?) of the lens (10, 12) being greater than the lateral extent of the radiation-emitting region (?). A method for producing such an optoelectronic thin-film chip is furthermore specified.

Abstract: A light emitting device includes a light emitting element, including a substrate including group III nitride compound semiconductor, a luminous layer structure including group III nitride compound semiconductor, the luminous layer structure formed on a first surface of the substrate, and an irregular surface formed on a second surface of the substrate, the second surface including a principal light emission surface, and a translucent sealing member for sealing the light emitting element, the translucent sealing member being separated from the second surface. At least one of translucent gel material and an inert gas is filled between the light emitting element and the translucent sealing member.

Abstract: A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer over the first conductive semiconductor layer; a second conductive semiconductor layer over the active layer; a bonding layer over the second conductive semiconductor layer; a schottky diode layer over the bonding layer; an insulting layer for partially exposing the bonding layer, the schottky diode layer, and the first conductive semiconductor layer; a first electrode layer electrically connected to both of the first conductive semiconductor layer and the schottky diode layer; and a second electrode layer electrically connected to the bonding layer.

Abstract: There is provided a semiconductor light-emitting device including a semiconductor light-emitting element, a phosphor layer disposed in a light path of a light emitted from the semiconductor light-emitting element, containing a phosphor to be excited by the light and having a cross-section in a region of a diameter which is 1 mm larger than that of a cross-section of the light path, and a heat-releasing member disposed in contact with at least a portion of the phosphor layer and exhibiting a higher thermal conductance than that of the phosphor layer.

Abstract: Provided is a light emitting device. The light emitting device comprises: In one embodiment, a light emitting device includes: a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and a conductive support member under the light emitting structure. The conductive support member comprises a first conductive support member and a second conductive support member. The second conductive support member has a thermal conductivity higher than that of the first conductive support member.

Abstract: An organic light emitting device and a method of fabricating the same are disclosed. The organic light emitting device includes an opaque substrate having one or more holes, and an organic emissive unit interposed between first and second electrodes positioned on the opaque substrate.

Abstract: A semiconductor structure is grown on a top surface of a growth substrate. The semiconductor structure comprises a III-nitride light emitting layer disposed between an n-type region and a p-type region. A curvature control layer is disposed in direct contact with the growth substrate. The growth substrate has a thermal expansion coefficient less than a thermal expansion coefficient of GaN and the curvature control layer has a thermal expansion coefficient greater than the thermal expansion coefficient of GaN.

Abstract: An optoelectronic component (100) comprises a first semiconductor layer stack (101), which has an active layer (110) designed for the emission of radiation and a main area (111). A separating layer (103) is arranged on said main area, said separating layer forming a semitransparent mirror. The optoelectronic component comprises a second semiconductor layer stack (102), which is arranged at the separating layer and which has a further active layer (120) designed for the emission of radiation.

Abstract: A light emitting diode (LED) has an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a transparent electrode layer. The LED includes a tunnel layer interposed between the p-type semiconductor layer and the transparent electrode layer, an opening arranged in the transparent electrode layer so that the tunnel layer is exposed, a distributed Bragg reflector (DBR) arranged in the opening, and an electrode pad arranged on the transparent electrode layer to cover the DBR in the opening.

Abstract: Disclosed are a patterning method of a metal oxide thin film using nanoimprinting, and a manufacturing method of a light emitting diode (LED). The method for forming a metal oxide thin film pattern using nanoimprinting includes: coating a photosensitive metal-organic material precursor solution on a substrate; preparing a mold patterned to have a protrusion and depression structure; pressurizing the photosensitive metal-organic material precursor coating layer with the patterned mold; forming a cured metal oxide thin film pattern by heating the pressurized photosensitive metal-organic material precursor coating layer or by irradiating ultraviolet rays to the pressurized photosensitive metal-organic material precursor coating layer while being heated; and removing the patterned mold from the metal oxide thin film pattern, and selectively further includes annealing the metal oxide thin film pattern.

Abstract: A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED.

Abstract: A solid state lighting device includes a device-scale stamped heatsink with a base portion and multiple segments or sidewalls projecting outward from the base portion, and dissipates all steady state thermal load of a solid state emitter to an ambient air environment. The heatsink is in thermal communication with one or more solid state emitters, and may define a cup-like cavity containing a reflector. At least a portion of each one sidewall portion or segment extends in a direction non-parallel to the base portion. A dielectric layer and at least one electrical trace may be deposited over a metallic sheet to form a composite sheet, and the composite sheet may be processed by stamping and/or progressive die shaping to form a heatsink with integral circuitry. At least some segments of a heatsink may be arranged to structurally support a lens and/or reflector associated with a solid state lighting device.

Abstract: A semipolar {20-21} III-nitride based laser diode employing a cavity with one or more etched facet mirrors. The etched facet mirrors provide an ability to arbitrarily control the orientation and dimensions of the cavity or stripe of the laser diode, thereby enabling control of electrical and optical properties of the laser diode.

Abstract: Light Emitting Diodes (LEDs) where the emission region, usually a (Al,In,Ga)N layer, is structured for efficient light extraction, are disclosed. The structuring is designed for light extraction from thin films, such as a photonic crystal acting as a diffraction grating. In addition, the structuring controls the in-plane emission and allows new modes into which light will be emitted. Various electrode designs are proposed, including ZnO structures which are known to lead to both excellent electrical properties, such as good carrier injection, and high transparency. Alternatively, the (Al,In,Ga)N layer can be replaced by structures with other materials compositions, in order to achieve efficient light extraction.

Abstract: An optoelectronic component, includes a carrier, a metallic mirror layer arranged on the carrier, a first passivation layer arranged on a region of the metallic mirror layer, a semiconductor layer that generates an active region during electrical operation arranged on the first passivation layer, a second passivation layer including two regions, wherein the first region is arranged on a top face of the semiconductor layer, and the second region which is free of the semiconductor layer is arranged on the metallic mirror layer, and wherein the first and second regions are separated from one another by a region which surrounds the first passivation layer and which is free of the second passivation layer.

Abstract: A light emitting device is provided. The light emitting device comprises: a conductive support substrate; a bonding layer on the conductive support substrate; a reflective layer on the bonding layer; and a light emitting structure layer on the reflective layer. The bonding layer comprises a solder bonding layer on the conductive support substrate and at least one of a diffusion barrier layer and an adhesion layer on the solder bonding layer, the solder bonding layer, the diffusion barrier layer, and the adhesion layer being formed of a metal or an alloy of which the Young's Modulus is 9 GPa to 200 GPa.

Abstract: The present application discloses a semiconductor light-emitting device with a protection layer. The structure includes a heat dispersion substrate, a first connecting layer on the heat dispersion substrate, a protection layer on the first connecting layer, a second connecting layer on the protection layer, and a light-emitting unit on the second connecting layer. The protection layer is highly insulative and can avoid the current leakage forming between the light-emitting unit and the heat dispersion substrate.

Abstract: Provided are a light-emitting element, a light-emitting device including the same, and methods of fabricating the light-emitting element and the light-emitting device. The light-emitting element includes a substrate on which a dome pattern is formed and a light-emitting structure conformally formed on the dome pattern. The light-emitting structure includes a first conductive layer of a first conductivity type, a light-emitting layer, and a second conductive layer of a second conductivity type sequentially stacked on the substrate. The light-emitting element also includes a first electrode formed on the first conductive layer and a second electrode formed on the second conductive layer.

Abstract: Provided are a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminium nitride crystal or an aluminum oxynitride crystal.

Abstract: A light emitting device includes a transparent conductive layer formed adjacent one of two semiconductor layers having an active layer therebetween. The transparent conductive layer includes first and second transparent conductive regions with different electrical conductivities. The difference in electrical conductivities controls an amount or flow rate of current into the semiconductor layer adjacent the transparent conductive layer, and an electrode is at least partial aligned with the second transparent conductive region.

Abstract: A method of making a light emitting device includes forming an active layer between first and semiconductor layers of different conductivity types, and forming a transparent conductive layer adjacent the second semiconductor layer. The transparent conductive layer includes a first transparent conductive region contacting a first region of the second semiconductor layer and a second transparent conductive region contacting a second region of the second semiconductor layer. An electrode is formed adjacent the first semiconductor layer in vertical alignment with the second region.

Abstract: The present invention discloses a light emitting device package, comprising: a metal base; an electrical circuit layer provided at an upper side of the metal base for providing a conductive path; a light emitting device mounted in a second region having a smaller thickness than a first region on the metal base; an insulating layer sandwiched between the meta base and the electrical circuit layer; an electrode layer provided at an upper side of the electrical circuit layer; and a wire for electrically connecting the electrode layer and the light emitting device. Further, there is provided a light emitting device package which is improved in light emission efficiency since the light emitting device is placed on a small thickness portion of the metal base.

Abstract: A polarized semiconductor light emitting device includes a semiconductor structure having a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer sequentially stacked. Also, the semiconductor structure further includes a plurality of light guide parts defined by a plurality of grooves arranged along a predetermined direction. The grooves extend from the second conductivity semiconductor layer with a depth reaching at least the active layer, and the light guide parts have a length greater than a width thereof to selectively emit a polarized component in a length direction thereof.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises a light-emitting diode chip comprising a plurality of light-emitting diode units and at least one electrical connecting layer. The light-emitting diode units are electrically connected with each other through the electrical connecting layer. Each of the light-emitting diode units comprises a first semiconductor layer, a second semiconductor layer, and an active layer. The light-emitting device further comprises a bonding layer; and a carrier bonded to the light-emitting diode chip by the bonding layer. The electrical connecting layer is formed between the light-emitting diode units and the bonding layer.

Abstract: One embodiment of the present invention provides a method for fabricating an InGaAlN light-emitting semiconductor structure. During the fabrication process, at least one single-crystal sacrificial layer is deposited on the surface of a base substrate to form a combined substrate, wherein the single-crystal sacrificial layer is lattice-matched with InGaAlN, and wherein the single crystal layer forms a sacrificial layer. Next, the InGaAlN light-emitting semiconductor structure is fabricated on the combined substrate. The InGaAlN structure fabricated on the combined substrate is then transferred to a support substrate, thereby facilitating a vertical electrode configuration. Transferring the InGaAlN structure involves etching the single-crystal sacrificial layer with a chemical etchant. Furthermore, the InGaAlN and the base substrate are resistant to the chemical etchant. The base substrate can be reused after the InGaAlN structure is transferred.

Abstract: Light emitting systems are disclosed. The light emitting system includes an LED that emits light at a first wave-length. A primary portion of the emitted first wavelength light exits the LED from a top surface of the LED that has a minimum lateral dimension Wmin. The remaining portion of the emitted first wavelength light exits the LED from one or more sides of the LED that has a maximum edge thickness Tmax (122, 124). The ratio Wmin/Tmax is at least 30. The light emitting system further includes a re-emitting semiconductor construction that includes a semiconductor potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the LED from the top surface and converts at least a portion of the received light to light of a second wavelength.

Abstract: A light-emitting diode backlight module includes a base and a light source disposed on the base. The light source comprises a substrate, a heat sink and an LED chip. The base has a heat conductor. The heat sink of the light source is coupled between the substrate of the light source and the heat conductor of the base. The heat sink has a first part which is adjacent a first side of the substrate and a second part which is adjacent a second side of the substrate. The heat sink is in contact with the heat conductor. The LED chip is disposed on the first part of the heat sink and emits light laterally.

Abstract: A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.