Abstract: A light-emitting device according to an embodiment includes: a blue color LED including a first principal surface, a second principal surface and a side surface, the blue color LED producing light; and a package portion in which a recess portion, which is a light shield portion accommodating the blue color LED with no gap on the side surface side, thereby preventing release of the light from the side surface, is formed.

Abstract: In accordance with one aspect of the present disclosure, a light emitting device for producing radiation optimal for plant growth is provided. The light emitting device comprises at least one LED chip having a peak wavelength disposed on a support, a phosphor material radiationally coupled to the at least one LED chip. The phosphor materials are capable of absorbing at least a portion of the radiation from the at least one LED chip and emitting light of a second wavelength. The light emitting device further includes an optical element at least partially covering the at least one LED chip and support. The light emitting device is capable of uniformly mixing the red and blue radiation to produce pink radiation.

Abstract: A thin-film LED includes an insulating substrate, an electrode on the insulating substrate, and an epitaxial structure on the electrode.

Abstract: Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.

Abstract: The present invention provides a LED chip structure. The LED chip structure comprises a substrate and an N type layer disposed on the substrate; a P type layer disposed on the N type layer; a N type contact pad and a P type contact pad disposed below the substrate; conductive through holes disposed through the substrate to electrically connect the N type layer to the N type contact pad and the P type layer to the conduct heat generated by the P type layer and the N type layer downward.

Abstract: A low-cost integrated reflector and heat spreader for high-density high power solid-state (e.g., LED) lighting arrays includes a base structure onto which is applied a sacrificial material. A relatively thick thermal spray coating is applied over the base structure and sacrificial material. The sacrificial material is removed. A channel(s) is thereby provided within the thermal spray coating layer and in physical contact with the base structure. The channel may be filled with a cooling fluid. A pulsating heat pipe heat spreader may thereby be provided. A reflective material may be provided either over another surface of the base structure or alternatively over the thermal spray coating layer to provide a surface for reflecting and directing light emitted from a solid state light source that may be secured to the integrated reflector and heat spreader.

Abstract: A light emitting chip includes a substrate, a heat conducting layer formed on the substrate, a protective layer formed on the heat conducting layer, a light emitting structure and a connecting layer connecting the protective layer with the light emitting structure. The heat conducting layer includes a plurality of horizontally grown carbon nanotube islands. The light emitting structure includes a first semiconductor layer, a light emitting layer and a second semiconductor layer. A first transparent conductive layer and a current conducting layer are sandwiched between the first semiconductor layer and the connecting layer. A second transparent conductive layer is formed on the second semiconductor layer.

Abstract: A light emitting device structure, wherein the emitter layer structure comprises one or more device wells defined by thick field oxide regions, and a method of fabrication thereof are provided. Preferably, by defining device well regions after depositing the emitter layer structure, emitter layer structures with reduced topography may be provided, facilitating processing and improving layer to layer uniformity. The method is particularly applicable to multilayer emitter layer structures, e.g. comprising a layer stack of active layer/drift layer pairs. Preferably, active layers comprise a rare earth oxide, or rare earth doped dielectric such as silicon dioxide, silicon nitride, or silicon oxynitride, and respective drift layers comprise a suitable dielectric, preferably silicon dioxide, of an appropriate thickness to control excitation energy. Pixellated light emitting structures, or large area, high brightness emitter layer structures, e.g.

Abstract: A tamper-resistant semiconductor device (5;20;30;40;50;60) which includes a plurality of electronic circuits formed on a circuitry side (6) of a substrate (7) having an opposite side which is a backside (8) of the semiconductor device, and comprises at least one light-emitting device (9a-f;21) and at least one light-sensing device (10a-f;22a-b) provided on the circuitry side (6) of the semiconductor device. The light-emitting device (9a-f;21) is arranged to emit light, including a wavelength range for which the substrate (7) is transparent, into the substrate towards the backside (8), and the light-sensing device (10a-f;22a-b) is arranged to sense at least a fraction of the emitted light following passage through the substrate (7) and reflection at the backside (8), and configured to output a signal indicative of a reflecting state of the backside, thereby enabling detection of an attempt to tamper with the backside (8) of the semiconductor device (5;20;30;40;50;60).

Abstract: This invention provides a high-efficiency light-emitting device and the manufacturing method thereof The high-efficiency light-emitting device includes a substrate; a reflective layer; a bonding layer; a first semiconductor layer; an active layer; and a second semiconductor layer formed on the active layer. The second semiconductor layer includes a first surface having a first lower region and a first higher region.

Abstract: A semiconductor light emitting element includes a semiconductor multilayer structure including a first conductive type layer, a second conductive type layer, and a light emitting layer sandwiched between the first conductive type layer and the second conductive type layer, and a reflecting layer formed on the second conductive type layer for reflecting the light emitted from the light emitting layer. The light is extracted in a direction from the light emitting layer toward the first conductive type layer. The first conductive type layer includes a concavo-convex region on a surface thereof not opposite to the light emitting layer, for changing a path of light, and at least a part of the reflecting layer is formed extending to right above an edge of the concavo-convex region.

Abstract: A general-use white color reflecting material, and a process for production thereof are provided. The white color reflecting material, without troublesome surface treatment such as formation of a reflective layer by plating, is capable of reflecting a near-ultraviolet ray of a wavelength region of 380 nm or longer or a near-infrared ray sufficiently without light leakage; does not become yellow even when exposed to near-ultraviolet rays; has excellent lightfastness, heat resistance, and weatherability; has high mechanical strength and chemical stability; is capable of maintaining a high degree of whiteness; and is easily moldable at a low cost. Further a white color reflecting material used as an ink composition for producing the white color reflecting material in a film shape is also provided.

Abstract: An integrated multi-layer apparatus and method of producing the same is disclosed. The apparatus comprises an LED, a beam shaping layer, and a refracting layer between the beam shaping layer from the LED. The refracting layer may have an index of refraction lower than the index of refraction of the LED and the beam shaping layer.

Abstract: The invention provides a metal substrate and a light source device ensuring that a semiconductor chip working as a light source can be firmly joined by using a metal joining material, such that heat generated in the mounted semiconductor chip can be efficiently dissipated through a metal plate. The metal substrate includes a heat dissipating metal plate made of a metal except for Au, an insulating resin-made white film stacked on a part of the heat dissipating metal plate, and a light source mounting surface-forming layer stacked on another part of the heat dissipating metal plate. The metal substrate is such that the light source mounting surface-forming layer is a metal layer directly contacting the heat dissipating metal plate, and the light source mounting surface is a surface of an Au layer which is the outermost layer of the light source mounting surface-forming layer.

Abstract: A light emitting device package includes a plurality of lead frames separated from one another; at least one light emitting device provided with a wire bonding pad attached to a lower surface thereof opposite an upper light emission surface thereof, and mounted on the lead frames such that the wire bonding pad is positioned in a space between the lead frames; a bonding wire electrically connecting the wire bonding pad to the lead frame through the space between the lead frames; and a mold part encapsulating the lead frames, the light emitting device and the bonding wire, and having a reflection groove formed in an upper surface thereof to expose the light emission surface therethrough and a pad groove formed in a bottom surface thereof to expose a portion of the lead frame so as to form a solder pad thereon.

Abstract: The present invention relates to a polarized light emitting diode (LED) device and the method for manufacturing the same, in which the LED device comprises: a base, a light emitting diode (LED) chip, a polarizing waveguide and a packaging material. In an exemplary embodiment, the LED chip is disposed on the base and is configured with a first light-emitting surface for outputting light therefrom; and the waveguide, being comprised of a polarization layer, a reflection layer, a conversion layer and a light transmitting layer, is disposed at the optical path of the light emitted from the LED chip; and the packaging material is used for packaging the waveguide, the LED chip and the base into a package.

Abstract: A light emitting element and a light emitting device for which light extraction efficiency is enhanced are provided. A light emitting element 10 includes a substrate 1 having light transmittance, a semiconductor layer 2 in which an n-type layer 2a, an active layer 2b, and a p-type layer 2c are stacked, a reflective electrode 3 stacked on the semiconductor layer 2 and configured to reflect light emitted from the active layer 2b, toward the substrate 1, a p-side pad electrode 4 stacked on the reflective electrode 3, an insulating film 6 covering a side surface of the semiconductor layer 2 and having light transmittance, a reflective film 7 stacked on the insulating film 6 and having light reflectivity, and an n-side electrode 5 provided on the substrate 1.

Abstract: According to one embodiment, an illumination apparatus includes an LED (Light Emitting Diode) module, a light guide plate, and a support body. The support body supports the LED module and the light guide plate. A reflective surface of the support body is provided between a portion supporting the LED module and a portion supporting the light guide plate. The reflective surface is reflective with respect to the light emitted from the LED package. The LED module is tilted relative to the reflective surface with the LED package mounting surface being toward the reflective surface. An angle between the LED module and the reflective surface is less than 90°.

Abstract: A method for manufacturing a light emitting diode (LED) package is provided. The method includes preparing a package body including a first lead frame formed with a cavity and inserted on one side of a bottom surface of the cavity and a second lead frame inserted on the other side, mounting an LED chip on the bottom surface and electrically connecting the LED chip with the first lead frame and the second lead frame, forming a molding portion by a molding resin in the cavity, connecting, to the package body, a first mold corresponding to the molding portion and including a through hole having an inner surface linearly or non-linearly inclined, connecting a second mold to an upper surface of the first mold, forming a lens portion on the molding portion by a transparent resin, and separating the first mold and the second mold from the package body.

Abstract: A method for enhancing light extraction of a light emitting device is disclosed. The method includes the steps of: providing a site layer on the light emitting device; placing a protection layer on the site layer; forming an array of pores through the protection layer and the site layer; and growing on the site layer an oxide layer, having a plurality of rods, each of which is formed in one of the pores. The shapes of the rods can be well controlled by adjusting reactive temperature, time and N2/H2 concentration ratio of atmosphere such that the shape and light escape angle of the rods can be changed.

Abstract: A light emitting diode is disclosed that includes a conductive substrate, a bonding metal on the conductive substrate and a barrier metal layer on the bonding metal. A mirror layer is encapsulated by the barrier metal layer and is isolated from the bonding metal by the barrier layer. A p-type gallium nitride epitaxial layer is on the encapsulated mirror, an indium gallium nitride active layer is on the p-type layer, and an n-type gallium nitride layer is on the indium gallium nitride layer, and a bond pad is made to the n-type gallium nitride layer.

Abstract: A method for producing an optoelectronic semiconductor component includes providing a carrier; arranging at least one optoelectronic semiconductor chip at a top side of the carrier; shaping a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body covers all side areas of the at least one optoelectronic semiconductor chip, and wherein a surface facing away from the carrier at the top side and/or a surface facing the carrier at the underside of the at least one semiconductor chip remains substantially free of the shaped body or is exposed, and removing the carrier.

Abstract: An LED package and a lead frame include a reflector cup having a bottom surface with an LED asymmetrically positioned on the bottom surface and a wall surface inclined relative to the bottom surface and defining an opening at an upper end thereof. The bottom surface of the reflector cup has a first axial dimension along a first axis and a second axial dimension along a second axis, orthogonal to the first axis. A display having an asymmetrical FFP and asymmetrical screen curve includes an array of the LED modules including a plurality of LED packages. At least some of the LED packages include a dome-shaped lens asymmetrically positioned with respect to a geometric center of the bottom surface of the reflector cup.

Abstract: A packaged light emitting device (LED) includes a light emitting diode configured to emit primary light having a peak wavelength that is less than about 465 nm and having a shoulder emission component at a wavelength that is greater than the peak wavelength, and a wavelength conversion material configured to receive the primary light emitted by the light emitting diode and to responsively emit light having a color point with a ccx greater than about 0.4 and a ccy less than about 0.6.

Abstract: A light emitting diode includes a semiconductor body including an active region that produces radiation, a carrier body fastened to the semiconductor body on an upper side of the semiconductor body, the carrier body including a luminescence conversion material consisting of a ceramic luminescence conversion material, a mirror layer applied to the semiconductor body on an underside of the semiconductor body remote from the upper side, and two contact layers, a first contact layer of the contact layers connected electrically conductively to an n-conducting region of the semiconductor body and a second contact layer of the contact layers connected electrically conductively to a p-conducting region of the semiconductor body.

Abstract: A light emitting device includes a semiconductor structure having a light emitting layer disposed between an n-type region and a p-type region. A porous region is disposed between the light emitting layer and a contact electrically connected to one of the n-type region and the p-type region. The porous region scatters light away from the absorbing contact, which may improve light extraction from the device. In some embodiments the porous region is an n-type semiconductor material such as GaN or GaP.

Abstract: Semiconductor white light sources presented herein include special combinations of a blue source and a yellow source where these light fields are substantially overlapped. The source of blue light includes a blue emitting semiconductor operating in a conventional manner. However, this blue light source is combined with a special yellow light source and the light produced by each is mixed together. The yellow light source is primarily comprised of a high output ultraviolet emitting semiconductor coupled to a wavelength shifting medium whereby the semiconductor pumps the wavelength shifting medium causing re-emission at longer wavelengths; namely those corresponding to yellow colored light. These two sources operating in conjunction with each other operate to produce higher outputs than those attainable in competitive white light semiconductor systems. In special versions, provision is made whereby the color coordinates may be tuned by a variable current applied to the blue emitting semiconductor.

Abstract: Provided are a light emitting device and a method for manufacturing the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a light extraction layer. The active layer is formed on the first conductive type semiconductor layer. The second conductive type semiconductor layer is formed on the active layer. The light extraction layer is formed on the second conductive type semiconductor layer. The light extraction layer has a refractive index smaller than or equal to a refractive index of the second conductive type semiconductor layer.

Abstract: An optic assembly is provided. The assembly includes a housing having an upstream end and a downstream end. An LED is positioned in the upstream end of the housing. The LED is configured to generate excitation light therefrom. The excitation light has a first wavelength. An optic is positioned in the downstream end of the housing. The optic is positioned remotely from the LED so that a cavity is formed between the LED and the optic. The excitation light generated from the LED passes downstream through the cavity to the optic. Quantum dots are positioned on the optic. The excitation light excites the quantum dots so that the quantum dots produce emitted light having a second wavelength that is different than the first wavelength of the excitation light.

Abstract: A light emitting diode is disclosed. The diode includes a package support and a semiconductor chip on the package support, with the chip including an active region that emits light in the visible portion of the spectrum. Metal contacts are in electrical communication with the chip on the package. A substantially transparent encapsulant covers the chip in the package. A phosphor in the encapsulant emits a frequency in the visible spectrum different from the frequency emitted by the chip and in response to the wavelength emitted by the chip. A display element is also disclosed that combines the light emitting diode and a planar display element. The combination includes a substantially planar display element with the light emitting diode positioned on the perimeter of the display element and with the package support directing the output of the diode substantially parallel to the plane of the display element.

Abstract: A light-emitting diode backlight module includes a base and a light source disposed on the base. The light source comprises a substrate, a heat sink and an LED chip. The base has a heat conductor. The heat sink of the light source is coupled between the substrate of the light source and the heat conductor of the base. The heat sink has a first part which is adjacent a first side of the substrate and a second part which is adjacent a second side of the substrate. The heat sink is in contact with the heat conductor. The LED chip is disposed on the first part of the heat sink and emits light laterally.

Abstract: A light emitting device according to the embodiment includes a reflecting layer; an adhesion layer including an oxide-based material on the reflecting layer; an ohmic contact layer on the adhesion layer; and a light emitting structure layer on the ohmic contact layer.

Abstract: A method for manufacturing a light emitting device includes forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate. A dielectric film on a second surface side opposite to the first surface of the multilayer body is formed having first and second openings on a p-side electrode and an n-side electrode. A seed metal on the dielectric film and an exposed surface of the first and second openings form a p-side metal interconnect layer and an n-side metal interconnect layer separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal. A resin is formed in a space from which the seed metal is removed.

Abstract: An optoelectronic semiconductor component includes a carrier and at least one semiconductor layer sequence. The semiconductor layer sequence includes at least one active layer. The semiconductor layer sequence is furthermore mounted on the carrier. The semiconductor component furthermore includes a metal mirror located between the carrier and the semiconductor layer sequence. The carrier and the semiconductor layer sequence project laterally beyond the metal mirror. The metal mirror is laterally surrounded by a radiation-transmissive encapsulation layer.

Abstract: A light emitting diode chip includes a thermal conductive substrate, an epi-layer, a thin-type ohmic contacting film, a transparent conducting layer, and an electrode pad. The epi-layer includes a p-type semiconductor layer, an n-type semiconductor layer, and an active layer. The n-type semiconductor layer includes a stepped surface at a side thereof facing away from the substrate, and the stepped surface includes a central portion and a peripheral portion surrounding the central portion. The n-type semiconductor layer has a thickness decreasing along directions from a center thereof to opposite lateral peripheries thereof. The ohmic contacting film is arranged on the stepped surface. The conducting layer is arranged on the ohmic contacting film. The electrode pad is arranged on the conducting layer and located corresponding to the central portion of the stepped surface.

Abstract: An optical subassembly manufacturing method includes forming connecting electrodes and a piece of high-melting-point glass on a wiring substrate; positioning on and connecting to the connecting electrodes, an optoelectronic converting element; disposing on the piece of high-melting-point glass, a piece of low-melting-point glass having a melting point lower than the piece of high-melting-point glass; and fixing to the piece of low-melting-point glass, a protruding portion of a lens member further having a lens portion. The protruding portion has a shape matching that of the piece of high-melting-point glass, and relative positions of the protruding portion and the optical axis of the lens portion are determined to correspond to relative positions of the connecting electrodes and the piece of high-melting-point glass. The fixing includes fixing the protruding portion of the lens member to the piece of high-melting-point glass via surface tension generated by melting the piece of low-melting-point glass.

Abstract: An optical element package includes: an optical element in a form of a chip, and a lens resin having a convex lens surface covering an optical functional surface of the optical element. The convex lens surface is formed as a rough surface having a plurality of minute convex curved surfaces having a vertex in a direction perpendicular to a plane in contact with each part of the convex lens surface.

Abstract: A light-emitting diode (LED) device includes a substrate and an epitaxial layer which is disposed on a surface of the substrate. A depression is disposed to a sidewall of the LED device, and a reflective layer is disposed to on least one portion of the depression. By the reflective layer disposed to the depression of the sidewall of the LED device, the light loss caused by the interface of the substrate and the epitaxial layer can be reduced, the light absorbed by the substrate can be decreased, and the angle of the light exiting from the LED device can be adjusted. A manufacturing method of the LED device is also disclosed.

Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layer, a first electrode and a second electrode. The epitaxial layer is disposed on the substrate. The first electrode is disposed to the epitaxial layer and the second electrode is disposed on the epitaxial layer, and a first conductive finger of the second electrode and a first conductive finger of the first electrode are overlapped. Because the first conductive finger of the second electrode and the first conductive finger of the first electrode are overlapped, the light-emitting area of the LED device can be increased and the light shielded by the electrodes can be decreased significantly. Besides, overlapped electrodes can form a capacitor which can store electric charges to enhance the antistatic ability of the LED device.

Abstract: A planar light source device includes: a substrate having a thickness larger than 0.9 mm and including a metal layer; and a plurality of light-emitting diode chips disposed on the substrate in a matrix array. Each light-emitting diode chip has a chip size ranging from 0.0784 mm2 to 0.25 mm2. Two adjacent ones of the light-emitting diode chips are spaced apart from each other by a distance of at least two times a length of the light-emitting diode chips.

Abstract: A light emitting diode is disclosed having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a mirror layer adjacent the light emitting region of the diode. The diode includes an opening in the mirror layer beneath the geometric projection of the top ohmic contact through the diode that defines a non-contact area between the mirror layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the more transparent portions of the diode.

Abstract: A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A bottom contact disposed on a bottom surface of the semiconductor structure is electrically connected to one of the n-type region and the p-type region. A top contact disposed on a top surface of the semiconductor structure is electrically connected to the other of the n-type region and the p-type region. A mirror is aligned with the top contact. The mirror includes a trench formed in the semiconductor structure and a reflective material disposed in the trench, wherein the trench extends through the light emitting layer.

Abstract: There is provided an optical semiconductor device having a first optical semiconductor element including an InP substrate, a lower cladding layer formed on the InP substrate, a lower optical guide layer which is formed on the lower cladding layer and is composed of AlGaInAs, an active layer which is formed on the lower optical guide layer and has a multiple quantum well structure where a well layer and a barrier layer that is formed of AlGaInAs are alternately stacked, an upper optical guide layer which is formed on the active layer and is composed of InGaAsP, and an upper cladding layer formed on the upper optical guide layer.

Abstract: A semiconductor light emitting device (A1) includes a case (1) and a plurality of semiconductor light emitting elements (3) arranged in the case. The case (1) is formed with a plurality of reflectors (11) each in the form of a truncated cone surrounding a respective one of the semiconductor light emitting elements (3). Current is applied to each of the semiconductor light emitting elements (3) via two wires (6). Each of the wires (6) includes a first end, and a second end opposite to the first end. The first end is connected to the semiconductor light emitting element (3), whereas the second end is located outside the space surrounded by the reflector (11).

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Abstract: A light emitting diode module having improved luminous efficiency is provided. The light emitting diode module includes: a light emitting chip; a phosphor layer formed of phosphor materials emitting light having a wavelength longer than the light emitted from the light emitting chip using light emitted from the light emitting chip as an excitation source; and a reflection plate that is disposed between the light emitting chip and the phosphor layer and that reflects the light emitted by the phosphor layer.

Abstract: Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.

Abstract: An optoelectronic device is provided that includes a substrate having a surface and a normal direction perpendicular to the surface, a first semiconductor layer formed on the surface, and at least one hollow component formed between the first semiconductor layer and the surface. A method of fabricating an optoelectronic device is also provided that includes providing a substrate having a surface and a normal direction perpendicular to the surface, forming a first semiconductor layer on the surface, patterning the first semiconductor layer, forming a second semiconductor layer on the substrate and cover the patterned first semiconductor layer, and forming at least one hollow component formed between the first semiconductor layer and the surface. A height of the hollow component varies along with a first direction perpendicular to the normal direction and/or a width of the hollow component varies along with a second direction parallel with the normal direction.

Abstract: The present invention provides a semiconductor light-emitting device that includes a compound semiconductor layer formed by laminating a first clad layer, a light-emitting layer and a second clad layer, a plurality of first ohmic electrodes formed on the first clad layer, a plurality of second ohmic electrodes formed on the second clad layer, a transparent conductive film that is formed on the first clad layer of the compound semiconductor layer and is conductively connected to the first ohmic electrodes, a bonding electrode formed on the transparent conducting film, and a support plate that is positioned on the second clad layer side of the compound semiconductor layer and is conductively connected to the second ohmic electrodes.

Abstract: A light-emitting device comprises a lattice structure to minimize the horizontal waveguide effect by reducing light traveling distance in the light-absorption medium of the light-emitting devices, and to enhance light extraction from the light-emitting layer. The lattice structure includes sidewalls and/or rods embedded in the light-absorption medium and dividing the light-absorption medium into a plurality of area units. The area units are completely isolated or partially separated from each other by the sidewalls. Also provided is a method of fabricating a light-emitting device that comprises a lattice structure, which lattice structure includes sidewalls and/or rods embedded in the light-absorption medium and dividing the light-absorption medium into a plurality of area units.