Abstract: Ionization devices that have at least two modes of ionization, and that can switch between these two modes of operation, are described. Illustratively, the ionization devices can switch between a photoionization (PI) mode and a combined mode of electroionization (EI) and PI (EI/PI mode).

Abstract: The present invention generally relates to a capacitively coupled plasma (CCP) processing chamber, a manner to reduce or prevent stray capacitance, and a manner to measure plasma conditions within the processing chamber. As CCP processing chambers increase in size, there is a tendency for stray capacitance to negatively impact the process. Additionally, RF ground straps may break. By increasing the spacing between the chamber backing plate and the chamber wall, stray capacitance may be minimized. Additionally, the plasma may be monitored by measuring the conditions of the plasma at the backing plate rather than at the match network. In so measuring, the plasma harmonic data may be analyzed to reveal plasma processing conditions within the chamber.

Abstract: A cold plasma mask application device for delivery of a cold plasma to the face of a patient. An appropriate gas is introduced into a gas containment area that is energized by one or more electrodes that receive energy from a pulsed source. The plasma can be prevented from contact with the patient's face, or can be allowed to make contact with the patient's face at the appropriate treatment area. A three-layer approach to the manufacture of the cold plasma mask application device is also described. Such a device and method can be used to treat acne as well as complex facial wounds such as those resulting from trauma, melanoma, and other cancers of the face, rosacea, and psoriasis.

Abstract: A gas cartridge is described that is configured to provide sufficient gas to support cold plasma generation for a specific medical process. The gas cartridge has a seal that is pierced upon connection of the gas cartridge to the cold plasma delivery system. Different embodiments are described that use different connection locations between the gas cartridge and the cold plasma delivery system. A shroud is also described that shields the user if the cold plasma delivery system is dropped and the gas cartridge ruptures. Use of an ID system assists in ensuring that the correct gas mixture, correct gas cartridge and correct power supply settings are used for the particular medical treatment process.

Abstract: A cold plasma sterilization device for sterilization of objects such as medical instruments. Gas is fed to a plasma chamber where it is energized by one or more electrodes coupled to a pulse source to thereby generate a cold plasma inside the plasma chamber. A dielectric barrier is sandwiched between the gas compartment and the electrodes to form a dielectric barrier discharge device. Inside the plasma chamber, one or more conductive stands that are coupled to ground hold the object to-be-sterilized. The cold plasma exits the plasma chamber, where it is recirculated for further use as a plasma source in subsequent cycles. Gases that can be used include noble gases such as helium, or combinations of noble gases.

Abstract: New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

Abstract: This invention relates to a plasma source in the form of plasma generator (13) which utilizes an antenna (11) and an RF source (12). The generated plasma flows into a chamber (14) and ions are accelerated out of the chamber (14) by grid (15). A body 16 is located in the volume for creating local losses and thereby reducing local plasma density.

Abstract: The present invention discloses a surface feed-in electrode structure for thin film solar cell deposition, relating to solar cell technologies. The surface feed-in electrode structure uses a signal feed-in component with a flat waist and a semicircular feed-in end to connect the signal feed-in port by surface contact. The signal feed-in port is located in a hallowed circular area of a center of the backside of a cathode plate, and feeds in an RF/VHF power supply signal. An anode plate is grounded. The cathode plate is insulated with a shielding cover, and a through-hole is configured on the shielding cover. The effects include that, by using the surface feed-in at the center of the electrode plate, the feeding line loss of single-point or multi-point feed-in configurations can be overcome. Uniform large area and stable discharge driven by the RF/VHF power supply signal can be achieved, and the standing wave and the skin effect can be effectively removed.

Abstract: That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, the thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.

Abstract: A system and method for managing power delivered to a processing chamber is described. In one embodiment current is drawn away from the plasma processing chamber while initiating an application of power to the plasma processing chamber during an initial period of time, the amount of current being drawn away decreasing during the initial period of time so as to increase the amount of power applied to the plasma processing chamber during the initial period of time.

Abstract: A first radio frequency (RF) generator includes a first RF power source that generates an RF power output. A first sensor generates at least one sensor signal based on the RF power output. A first signal processing unit generates magnitude and phase signals associated with the at least one sensor signal. A second signal processing unit generates a first control signal to control a frequency and a phase of the first RF power source based on the magnitude and phase signals. The first RF power source determines, based on the magnitude signals, whether to generate the RF power output in response to the first control signal or in response to a second control signal received from a second RF generator.

Abstract: A method for constructing a magnetoresistive sensor that avoids shadowing effects of a mask structure during sensor definition. The method includes the use of an antireflective coating (ARC) and a photosensitive mask deposited there over. The photosensitive mask is formed to cover a desired sensor area, leaving non-sensor areas exposed. A reactive ion etch is performed to transfer the pattern of the photosensitive mask onto the underlying ARC layer. The reactive ion etch (RIE) is performed with a relatively high amount of platen power. The higher platen power increases ion bombardment of the wafer, thereby increasing the physical (ie mechanical) component of material removal relative to the chemical component. This increase in the physical component of material removal result in an increased rate of removal of the photosensitive mask material relative to the ion mill resistant mask.

Abstract: This disclosure relates to methods and devices for generating electron dense air plasmas at atmospheric pressures. In particular, this disclosure relate to self-contained toroidal air plasmas. Methods and apparatuses have been developed for generating atmospheric toroidal air plasmas. The air plasmas are self-confining, can be projected, and do not require additional support equipment once formed.

Abstract: A method for controlling synchronization of pulsed plasma by applying a DC power is provided. The method includes repeatedly generating and extinguishing the plasma by adjusting an ON-period and an OFF-period of a pulsed RF power being applied to a source electrode part. And the method also includes alternately applying a DC power to a bias electrode part in accordance with the ON-period and the OFF-period.

Abstract: A method and apparatus is provided for efficiently supplying a liquid with ions or radicals generated by plasma and so on, or for effectively sterilizing microorganisms present in a liquid or on the surface thereof. The method includes generating plasma in a gas phase by a plasma generation device, producing ions or radicals in the gas phase by the plasma; electrophoresing the ions or radicals toward the liquid by an electric field applied to the produced ions or radicals; and diffusing the ions or radicals into the liquid. The liquid is adjusted to have a pH value of 4.8 or lower for effective sterilization.

Abstract: A wide area atmospheric pressure plasma jet apparatus including a transmission mechanism, a plasma housing and two plasma-generating devices is provided. The transmission mechanism includes a rotation output end that has a center axis. The plasma housing has an opening. The plasma housing further has a air-attracting hole near the rotation output end and extended from an outer wall of the plasma housing to the interior of the plasma housing, so that the heat of the plasma housing can be dissipated due to the generated gas circulation. The plasma-generating devices are disposed within the plasma housing and connected with the rotation output end. Each of the plasma-generating devices has a plasma nozzle located at the opening and tilts from the center axis. When the rotation output end drives the plasma-generating devices to rotate, two plasma beams are obliquely ejected from the plasma nozzle and the plasma processing area is increased.

Abstract: [Objection of the invention]An ion beam generator, a thermal distortion in a grid assembly is reduced. [Structure to solve the objection]Thermal expansion coefficients ?P, ?M and ?G, for a sidewall (1A) of a discharge chamber, mounting platform (40) and extraction grid electrode assembly (20) are selected to have a relation: ?P>?M??G. For example, the material of discharge chamber sidewall is stainless steel o aluminum, the material of grids is Mo, W or C and the material of platform is Ti or Mo.

Abstract: A plasma radiation source includes a vessel configured to catch a source material transmitted along a trajectory, and a decelerator configured to reduce a speed of the source material in a section of the trajectory downstream of a plasma initiation site.

Abstract: A plasma torch is formed from a hollow electrode forming a first gap to an isolated plasma tube, the isolated plasma tube forming a second gap with a plasma outlet tube having electrically common plasma tubes which terminate into a plasma outlet. The first gap and second gap of the isolated plasma tubes are fed by a source of plasma gas such that when a voltage is applied across the electrodes, plasmas initially form across the first plasma gap and second plasma gap. The formed plasmas spread laterally until the plasmas are formed entirely from electrode to electrode and self-sustaining. Plasma gasses which are fed to the plasma torch can be metered on both sides of the electrodes to steer the plasma arc attachment axially over the extent of the hollow electrodes, thereby reducing surface wear and increasing electrode life.

Abstract: A plasma processing method and a plasma processing apparatus in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.

Abstract: An iodine fueled plasma generator system includes a plasma generator. At least one storage vessel is configured to store condensed phase iodine therein. A heating device proximate to the storage vessel is configured to create iodine vapor from the condensed phase iodine. A propellant management subsystem is configured to deliver the iodine vapor to the plasma generator. A feedback control subsystem is responsive to one or more of plasma generator discharge current, the pressure of the iodine vapor, and/or the temperature of the iodine vapor configured to regulate the flow rate of the iodine vapor to the plasma generator.

Abstract: Electrodes are disclosed for use in a non-contact initiation plasma arc torch, the electrodes including an electrode body having a distal end opposing the outlet of the nozzle and a tapered section adjacent the distal end configured so that the electrode diameter decreases in the direction of the distal end. The electrode tapered section includes at least one discontinuity forming an edge, the edge being disposed as so to have an included angle of no greater than about 90 degrees. The configuration of the edge provides a localized enhancement of electrical field during non-contact initiation of a pilot arc using the electrode. The discontinuity and edge can be formed in various ways. Related torch designs including nozzles are disclosed.

Abstract: A patterned beam of radiation is projected onto a substrate. A reflective optical element is used to help form the radiation beam from radiation emitted from a plasma region of a plasma source. In the plasma source, a plasma current is generated in the plasma region. To reduce damage to the reflective optical element, a magnetic field is applied in the plasma region with at least a component directed along a direction of the plasma current. This axial magnetic field helps limit the collapse of the Z-pinch region of the plasma. By limiting the collapse, the number of fast ions emitted may be reduced.

Abstract: A method of lighting a light source apparatus that has a discharge lamp, a reflection mirror for reflecting light emitted from the discharge lamp, a light emission optical system for irradiating a work piece with light, one or more laser oscillator for emitting a laser beam to the discharge lamp, and a discharge starting unit for starting discharge. The method includes removing deposits adhering to an inner face of the discharge lamp by irradiating a discharge vessel with the laser beam from the first laser oscillator, starting discharge in the discharge vessel by the discharge starting unit, and condensing the laser beam from a second laser oscillator, into the discharge vessel.

Abstract: An apparatus for synergistically combining a plasma with a comminution means such as a fluid kinetic energy mill (jet mill), preferably in a single reactor and/or in a single process step is provided by the present invention. Within the apparatus of the invention potential energy is converted into kinetic energy and subsequently into angular momentum by means of wave energy, for comminuting, reacting and separation of feed materials. Methods of use of the apparatus in the practice of various processes are also provided by the present invention.

Abstract: In an extreme ultra violet light source apparatus of a laser produced plasma type, charged particles such as ions emitted from plasma are promptly ejected to the outside of a chamber. The apparatus includes a chamber, a target supply unit for supplying a target material into the chamber, a collector mirror for collecting extreme ultra violet light radiated from plasma generated by irradiating the target material with a laser beam to output the extreme ultra violet light, an electromagnet arranged outside of the chamber, and a charged particle collection mechanism provided on at least one of two surfaces of the chamber to which lines of magnetic force generated by the electromagnet extend.

Abstract: Plasma processing apparatuses and techniques for processing substrates, which include the use of synchronized RF pulsing of a first RF signal and a delayed-and-shortened second RF signal. The first RF signal may be the primary plasma-generating RF signal and the second RF signal may be the RF bias signal or vice versa. Alternatively or additionally, the first RF signal may be the high frequency RF signal and the second RF signal may be the lower frequency RF signal. Either the first RF signal or the second RF signal may act as the master, with the other acting as the slave signal. Alternatively, an external circuit may be employed as a master to control both the first RF signal and the second RF signal as slave signals. Track-and-hold techniques and circuits are provided to ensure accurate measurement for process control and other purposes.

Abstract: A gas conversion system using microwave plasma is provided. The system includes: a microwave waveguide; a gas flow tube passing through a microwave waveguide and configured to transmit microwaves therethrough; a temperature controlling means for controlling a temperature of the microwave waveguide; a temperature sensor disposed near the gas flow tube and configured to measure a temperature of gas flow tube or microwave waveguide; an igniter located near the gas flow tube and configured to ignite a plasma inside the gas flow tube so that the plasma converts a gas flowing through the gas flow tube during operation; and a plasma detector located near the gas flow tube and configured to monitor the plasma.

Abstract: The present disclosure discusses a power delivery system, and methods of operation, configured to monitor characteristics of a generator, a match network, and a plasma load, via one or more sensors, and control these components via a local controller in order to improve power delivery accuracy and consistency to the plasma load. Control can be based on a unified monitoring of power characteristics in the power delivery system as well as variations between components and even non-electrical characteristics such as plasma density, end point, and spectral components of plasma light emission, to name a few.

Abstract: A method and apparatus for allowing the user of a power generator coupled to a time-varying load, to define an alternative reference impedance to enable on or more metrics to be provided relative to the alternative reference impedance. The metrics, for example, may provide indicia of performance of the power generator system. One illustrative embodiment provides a power delivery system that applies power to a plasma chamber to create a plasma therein; determines a reference impedance of the plasma at an operating condition; and controls the power delivery system based on the determined reference impedance.

Abstract: A water vapor plasma generating apparatus which is able to generate water vapor plasma stably is provided. By applying the water vapor plasma generated by the apparatus to an object to be treated, a sterilization and disinfection treatment can be performed. In addition, by applying the water vapor plasma generated by the apparatus to a substance containing an oily ingredient, an antioxidative treatment can be performed.

Abstract: A method of generating a glow discharge plasma involves providing a pair of electrodes spaced apart by an electrode gap, and having a dielectric disposed in the electrode gap between the electrodes; placing the electrodes within an environment, wherein the electrode gap can be provided with a gas or gas mixture containing carbon at a specified pressure; and applying a rapid rise time voltage pulse across the electrodes to cause an extreme overvoltage condition, wherein the rapid rise time is less than a plasma generation time so that the extreme overvoltage condition occurs prior to current flow across the electrode gap. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

Abstract: The invention relates to an electrode for a plasma generator for generating plasmas at atmospheric pressure or near-atmospheric pressures by means of excitation using microwaves. The invention provides an electrode made of a sheet metal strip (1), in the longitudinal direction of which at least one slot (2) is introduced at a length that is one time or multiple times that of a quarter of the wavelength of the open-circuit voltage of the microwave such that at least two partial electrodes (3) are formed, wherein the voltage supply line is provided on the partial electrodes (3) in the region of the closed slot end or ends.

Abstract: A nozzle for a plasma torch can include a body that has an inner surface, an outer surface, a proximal end, and an exit orifice at a distal end. The nozzle can also include a liner surrounded by the inner surface of the body. The liner can include a proximal end and an exit orifice at a distal end adjacent the exit orifice of the body. The nozzle can include at least one vent passage formed in the body. The vent passage can have an inlet formed in the inner surface of the body and an outlet formed in the outer surface of the body. The vent passage can be disposed between the proximal end of the body and the proximal end of the liner. The plasma arc torch can include a configuration that allows for increased electrode life and nozzle life for a vented high current plasma process.

Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis.

Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis.

Abstract: Plasma treatment systems and methods for distributing RF energy to electrodes in a plasma treatment system. The plasma treatment system includes power and ground busses, positive and negative phase primary electrode busses, and positive and negative phase secondary electrode busses. The power and ground busses are coupled to the secondary electrode busses by isolation transformers so that the negative phase secondary electrode buss is provided with an RF signal that is 180 degrees out of phase with the RF signal supplied to the positive phase secondary electrode buss. The secondary electrode busses are coupled to respective positive and negative phase primary electrode busses by capacitors. The primary electrode busses are each coupled to electrodes in the vacuum chamber. Load coils coupling the primary electrode busses to an RF ground may cooperative with the capacitors to adjust the input impedance at the power buss.

Abstract: The invention relates to a plasma source with an oscillator having an active element and a resonator connected to the active element. The resonator has a hollow body, a gas inlet, a gas outlet arranged at a distal end of the hollow body about a longitudinal axis of the hollow body, and a coil arranged along the longitudinal axis of the hollow body, said coil having an effective length of one quarter of a wavelength at a resonant frequency of the resonator. A distal end of the coil is arranged relative to the gas outlet such that a plasma section can form between the distal end of the coil serving as a first plasma electrode and the gas outlet of the hollow body serving as a second plasma electrode. At a proximal end of the hollow body, the coil is lead out of the interior of the hollow body through an electrically contact-free feed-through, and a proximal end of the coil contacts the hollow body at its external side.

Abstract: Apparatus and method for improving the plasma uniformity in a plasma based system are described. The apparatus may include a plurality of electrical conductors, to which one or more types of electrical potentials may be applied. The conductors may be arranged in an array and may preferably be positioned near the plasma. By applying the bias voltages to the various electrically conductors, the plasma can be manipulated. For example, the conductors may extract or confine the electrons in the plasma, thereby locally adjusting the plasma density near the conductors. In the process, uniformity of the plasma density or ion concentration in the plasma may be improved. In a further embodiment, a magnetic field is included in the same direction as the electric field created by the bias voltage so as to better confine the charged particles.

Abstract: Provided is a plasma processing apparatus having a coaxial waveguide structure in which characteristic impedance of an input side and characteristic impedance of an output side are different. A microwave plasma processing apparatus, which plasma-processes a substrate by exciting a gas by using a microwave, includes: a processing container; a microwave source, which outputs a microwave, a first coaxial waveguide, which transmits the microwave output from the microwave source; and a dielectric plate, which is adjacent to the first coaxial waveguide while facing an inner side of the processing container, and emits the microwave transmitted from the first coaxial waveguide into the processing container. A thickness ratio between an inner conductor and an outer conductor of the first coaxial waveguide is not uniform along a longitudinal direction.

Abstract: Apparatus and methods for preventing or substantially minimizing unwanted deposits on dielectric covers of an antenna by effectively providing an inert (non-depositing) gas at the surface of the antenna cover is provided.

Abstract: A distance from a negative output terminal of a secondary winding of the transformer to a feeding terminal of the cathode plate is longer than a distance from a positive output terminal of the secondary winding to a feeding terminal of the anode. The anode side feeding path electrically connects the feeding terminal of the anode bar to the positive output terminal of the secondary winding. The cathode side feeding path electrically connects the feeding terminal of the cathode plate to the negative output terminal of the secondary winding. A path length of the cathode side feeding path is longer than a path length of the anode side feeding path. The housing is formed by an electric conductor and is electrically connected to the cathode side feeding path.

Abstract: A method processing a workpiece in a plasma reactor chamber in which a first one of plural applied RF plasma powers is modulated in accordance with a time-varying modulation control signal corresponding to a desired process transient cycle. The method achieves a reduction in reflected power by modulating a second one of the plural plasma powers in response to the time-varying modulation control signal.

Abstract: Multiple control electrodes are provided asymmetrically within the plasma chamber of an ion source at respective positions along the length of the plasma chamber. Biasing the control electrodes selectively can selectively enhance the ion extraction current at adjacent positions along the length of the extraction slit. A method of generating an ion beam is disclosed in which the strengths of the transverse electric fields at different locations along the length of the plasma chamber are controlled to modify the ion beam linear current density profile along the length of the slit. The method is used for controlling the uniformity of a ribbon beam.

Abstract: A method for generating a pulsed flux of energetic particles comprises the following steps: —initiating an ion plasma at a first electrode (111) in a vacuum chamber (110) and allowing said plasma to develop towards a second electrode (112) in said vacuum chamber, —at a time at which said ion plasma is in a transitional state with a space distribution of ions or electrons at a distance from said second electrode, applying between said electrodes a short high voltage pulse so as to accelerate said distributed ions or electrons towards said second electrode, whereby a high-energy flux of charged particles is generated while overcoming the space charge current limit of a conventional vacuum diode, and —generating said energetic particles at said second electrode (112). A particle source is also disclosed. Application in particular to ultra-short pulse neutron generation.

Abstract: The invention, in its various aspects and embodiments, comprises a method and apparatus for an optical filament launch. In one aspect, the present invention generates a plurality of plasma filaments defining a radio frequency propagation path. In a second aspect, the present invention generates a pulsed plasma filament RF transmission line.

Abstract: An electrodeless plasma lamp and a method of controlling operation of a plasma lamp are provided. The plasma lamp may a power source to provide radio frequency (RF) power and a lamp body to receive the RF power from a feed. The lamp body may comprise a dielectric material having a dielectric constant greater than 2 and bulb is provided that contains a fill that forms a plasma that emits light when at least a portion of the RF power is coupled to the fill. A light guide directs light from the bulb to a photosensor that is shielded from light output from a front side of the lamp body. The lamp includes a drive circuit to control operation of the lamp based on a level of light detected by the photosensor.

Abstract: A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment, a conductive or ferrite material is used to influence a section of the antenna, where a section is made up of portions of multiple coiled segments. In another embodiment, a ferrite material is used to influence a portion of the antenna. In another embodiment, plasma uniformity is improved by modifying the internal shape and volume of the enclosure.

Abstract: Embodiments disclosed herein generally relate to obtaining a substantially uniform plasma distribution within a large area processing chamber. For large area processing chambers that utilize RF voltages, standing waves can lead to deposition and/or etching non-uniformities. By applying RF voltage in at least two separate locations at two separate, but close frequencies with or without phase modulation, the wave interference pattern moves across the electrode. By moving the standing wave across the electrode, the plasma generated in the chamber can, over time, be substantially uniform.

Abstract: An induction coil composed of n pieces of identically shaped coil elements (where n is equal to or greater than two), which are rotation-symmetrically arranged with respect to an axis normal to the surface of an object to be processed, is provided above the object, the coil elements being electrically connected in parallel. Each of the coil elements of the induction coil encircles the aforementioned axis, with the ground end and the feed end located at the same position on a projection plane on the object with the ground end under the feed end. Each coil element has a bottom portion shaped like an arc having a predetermined width and a central angle of 360°/n, with the ground end at one end thereof, and a feed portion shaped like an arc having a predetermined width, with the feed end at one end thereof, the feed portion being located above the bottom portion and electrically connected to the same bottom portion.