Abstract: A method of testing reliability in an integrated circuit including an array of test circuits, each test circuit including a resistor. The method includes selecting a first test circuit from the array, measuring a pre-stress resistance value for the resistor in the selected test circuit, applying a high stress current across the resistor, removing the high stress current, and measuring a post-stress resistance value for the resistor. Other embodiments include measuring additional resistance values before applying and after removing the high stress current. One embodiment includes applying a positive voltage to one stress input terminal, and then testing a short sensing terminal for the positive voltage, both before and after applying the high stress current. These steps test for whether or not the high stress current has created a short in the test circuit.

Abstract: A current detecting circuit connects to a secondary side of a transformer, including a first, second transistors and a field-effect transistor (FET). The first transistor has a base connecting with the base and emitter of the second transistor to form a common base terminal, an emitter forming a first detecting terminal and a collector forming a feedback terminal. The second transistor has a collector forming a second detecting terminal. The FET is used to replace a prior current rectifying diode. The FET has a source connecting to an output terminal of the transformer and a drain connecting to a direct current (DC) output terminal. The first, second detecting terminals and feedback terminal are connected with the source, drain and gate of the FET, respectively. Via detecting the current of the DC output terminal, the FET is timely turned on and off to release the energy stored in the transformer.

Abstract: A semiconductor testing apparatus and a semiconductor testing method are provided which permit an apparatus having an inexpensive configuration to perform, with precision, the acceptance-or-rejection determination and measurement test of a semiconductor integrated circuit having a large number of output terminals each for outputting a multi-gradation level output voltage. The semiconductor testing apparatus includes output voltage testing device and comparison voltage generation data inputting device. The output voltage testing device includes test voltage inputting device, comparison voltage generating device, a high level comparator, a low level comparator, and comparison result outputting device. The high level comparator and the low level comparator constitute comparing device for comparing a voltage to be tested, with a comparison voltage.

Abstract: A method and system for evaluating the current-voltage characteristics of devices where negative resistance behavior is observed. More particularly the present invention relates to a method and system for evaluating accurately the electrical overstress or ESD performance of semiconductor devices during the voltage transition region (positive to negative). The method comprises applying a signal comprising at least two amplitudes within the pulse. By suitably adjusting the amplitude of the first level, such that it is high enough to trigger the device-under-test, and subsequently applying one or more levels within the same signal while keeping the device-under-test in the on-state, the device IV characteristics can be comprehensively extracted, without being limited by the system loadline.

Abstract: The electrical circuit for driving a load comprises a transistor (12;14;22) having a load current flowing therethrough, a measurement device (30,32) for determining the voltage drop across this transistor (12;14;22), a device (42) for impressing a measuring current into the transistor (12;14;22), and a device for determining the resistance value of the transistor (12;14;22) in its ON state, this resistance value being between a known maximum value (RXMAX) and a known minimum value (RXMIN). The device for determining the resistance value is provided with a measuring bridge (36) having the transistor (12;14;22) and a known reference resistor (RR) arranged in its first bridge arm (38) and having three respectively known resistors (R1,R2,R3) arranged in its second bridge arm (40).

Abstract: A method and apparatus for detecting electromigration at its outset includes a pair of conductive traces deposited on a substrate in an integrated circuit. A multiplicity of conductors are connected along the length of the traces. Current is passed through the traces and the resistances of the traces from one conductor connection to the next are continually monitored by observing the voltage drop from one conductor to the next. The connection of the conductors to the traces may be less than one micrometer apart. When resistance changes as a result of the onset of electromigration, the exact location can be determined and studied in optical or scanning electron micrographs.

Abstract: An electrostatic type voltmeter for measuring the potential on a surface, the voltmeter including a probe; a support for supporting the probe in spaced relationship with the surface, the probe having a plurality of spacing element sites thereon for measuring a distance between each of the plurality of spacing element sites and a corresponding area on the surface opposite of each of the plurality of spacing element sites; a plurality of electrostatic element sites, intermixed and adjacent to the plurality of spacing element sites on the probe, for measuring a voltage between each of the plurality of spacing element sites and an area on the surface adjacent to the corresponding area opposite of each of the plurality of spacing element sites. A processor for compensating an output signal of the probe in response to the measurements received from the plurality of spacing element sites and the plurality of electrostatic element sites.

Abstract: A resistor (having a resistance of Rs) is connected in series with an inductor whose inductance and/or resistance is desired to be determined. An alternating voltage (such as a sinusoidal voltage) is applied across the series-connected resistor and inductor, wherein the alternating voltage has a frequency &ohgr;, a unique maximum or minimum value Vm, an average value and a unique crossover of the average value. The voltage Vr is measured across the resistor when the alternating voltage is at its maximum or minimum value. The voltage Vl is measured across the resistor when the alternating voltage is at its average value. The resistance RL of the inductor is calculated from an equation in which RL is a function of Vm, Vr, Rs and Vl. The inductance L of the inductor is calculated from an equation in which L is a function of Vl, Rl, Rs, Vr and &ohgr;.

Abstract: An arrangement for measuring current through a phase section of a buck mode DC-DC converter includes an auxiliary integrated circuit containing an auxiliary power MOSFET and a pilot MOSFET coupled in parallel with a current path through a high side MOSFET of a half-bridge of the converter. The pilot MOSFET has a current path coupled to a current measurement terminal. The MOSFETs of the auxiliary circuit are time division multiplexed with the high side MOSFET, whereby a determination of current through the auxiliary high side MOSFET is based upon current through the pilot device and the geometric ratio of the size of the pilot device to that of the high side auxiliary MOSFET. The high side MOSFET is activated for a large number of switching cycles relative to the pilot circuitry, but the pilot circuitry is activated sufficiently often to derive a relatively accurate measure of current flow.

Abstract: This method of checking at least one operating parameter of an energizer supplying an electric fence with high-voltage shock pulses consists, on the one hand, in producing a measurement signal having a value representing the operating parameter to be checked and controlling the production of the shock pulses as a function of the measurement signal in such a way that a time interval between the shock pulses is a function of the value of the measurement signal, and, on the other hand, in performing the following steps in any zone along the electric fence, remotely from the energizer: picking up the shock pulses; evaluating the time interval between the picked up pulses; and operating an indicator so as to provide an indication about the operating parameters, as a function of the evaluated time interval.

Abstract: The charging voltage measuring device includes a measuring electrode for forming an electrostatic capacity Cs with a substrate disposed on a substrate holding unit, a measuring capacitor, which has an electrostatic capacity Cm, being connected between the measuring electrode and a ground potential portion, and, a voltage measuring unit for measuring a measuring voltage Vm across the measuring capacitor, and a calculating unit. The calculating unit 22 calculates the charging voltage Vs on the surface of the substrate at time t1 in accordance with the following numerical expression on the basis of the measuring voltage Vm(t1) at time t1, an inverse K of a voltage dividing ratio and a resistance value Rm of a resistor disposed in parallel to the measuring capacitor 18, when the measurement time is t1.

Abstract: A fuel cell resistance test system includes a contact head having a plurality of spaced electrical contacts for contacting multiple ones of the fuel cells composing the stack. In one embodiment, a plurality of selectively actuable switches produce a short between respective pairs of adjacent ones of the electrical contacts. A processor opens each of the switches, one at a time in succession, to apply a defined voltage from a voltage source, successively across pairs of adjacent ones of the electrical contacts. A current sensor measures a resulting current and the processor or other computer determines whether a short exists based on the magnitude of the defined voltage and the magnitude of the resulting current. Alternatively, the test system may include a current source and a voltage sensor.

Abstract: A MCP semiconductor device includes at least first and second chips, each of which has internal pads and an internal circuit, encapsulated by a sealing material together. The device further includes a test circuit. The test circuit connects each of the internal pads to one of the internal circuits under a normal operation mode of the device, and disconnect between them under a test mode.

Abstract: A MCP semiconductor device includes at least first and second chips, each of which has internal pads and an internal circuit, encapsulated by a sealing material together. The device further includes a test circuit. The test circuit connects each of the internal pads to one of the internal circuits under a normal operation mode of the device, and disconnect between them under a test mode.

Abstract: Device for measuring an electrical current (I) that flows through a strip conductor (1), with a current-less measuring conductor (3) extending in the flow direction of the current, along and in the proximity of a measuring section (2) of the strip conductor (1), one end of the measuring conductor (3) being electrically connected with one end of the measuring section (2), the other end of the measuring section being provided with a first measuring point (4), and with a second measuring point (5) being electrically connected with the other end of the measuring section (2), characterised in that the measuring section (2) is rectilinear, that the second measuring point (5) is connected directly with the measuring section (2), and a voltage (U) is taken from the measuring points (4, 5).

Abstract: When a voltage is supplied from a voltage supply terminal to a non-inverted input terminal of an operational amplifier, a voltage equal to the supply voltage is input to an inverted input terminal and also to a voltage apply terminal for a load. When PNP transistors constituting a current mirror turn on in response to the applied voltage, a source current flows through one of the PNP transistors to the load, and a mirror current of the source current flows through the other of the PNP transistors to a current measuring terminal. The current driven to the load can be obtained by measuring the mirror current with an amperemeter.

Abstract: A circuit and a method determine at least one electrical characteristic variable for an integrated circuit. Two or more successively produced states of a reference signal are recorded and counted in a first recording unit to produce an output voltage in a voltage generator circuit for the integrated circuit, and the number of detected states is stored. Furthermore, a time duration within which the states of the reference signal are recorded is recorded in a second recording unit. The numerical values are output via an output circuit for determining the electrical characteristic variable. At least one electrical characteristic variable such as a voltage, current and/or power value for the integrated circuit, is calculated from the number of successively recorded states of the reference signal and from the time duration. It is therefore possible to obtain accurate values relating to the operation of the integrated circuit with comparatively little complexity.

Abstract: In a method for fast, high-accuracy autoranging measurement, a current detection resistance is shared by a current measurement apparatus and a voltage source with current limiting function, a value of current output from the voltage source via the resistance being measured by the current measurement apparatus, and the current range of the current measurement apparatus and the compliance being automatically changed in accordance with the measured current value.

Abstract: An apparatus (14) for and method of measuring impedance in a capacitively coupled plasma reactor system (10). The apparatus includes a high-frequency RF source (150) in electrical communication with an upper electrode (50). A first high-pass filter (130) is arranged between the upper electrode and the high-frequency RF source, to block low-frequency, high-voltage signals from the electrode RF power source (66) from passing through to the impedance measuring circuit A current-voltage probe (140) is arranged between the high-frequency source and the high-pass filter, and is used to measure the current and voltage of the probe signal with and without the plasma present. An amplifier (250) is electrically connected to the current-voltage probe, and a data acquisition unit (260) is electrically connected to the amplifier.

Abstract: Methods and apparatus for obtaining a representation of the distribution of electrical impedance within a multiphase flow with an electrically continuous or discontinuous principle flow (3) contained within an electrically conductive solid ring electrode (1), comprising providing a plurality of mutually spaced electrical contacts (2) mounted at the outside wall of the ring and electrically contacted with the ring, applying currents or voltages (4) to the ring from the electrical contacts (2), generating a more homogeneous electric field distribution within the material (3), measuring voltage or current (5) distribution along the ring from other electrical contacts (2), relatively intensifying the imaging sensitivity at the central area of the sensing domain using a &pgr;/2 angle sensing strategy and reconstructing the representation of the impedance distribution using CG method with an error processing strategy.

Abstract: The disclosure relates to a semiconductor device testing apparatus, a semiconductor device testing system, and a semiconductor device testing method, in particular a method for measuring or trimming, respectively, the impedance of driver devices provided in a semiconductor device, wherein a device, in particular a driver device, comprising each a pull-up circuit and a pull-down circuit is used, and wherein the method includes: joint activating of both the pull-up circuit and the pull-down circuit; and determining a first current flowing through the pull-up circuit or the pull-down circuit, respectively, with jointly activated pull-up and pull-down circuits.

Abstract: The invention relates to i sensor elements that are interconnected in a (n×m) matrix design with nrow conductors and m column conductors, with i,n and m being natural numbers unequal zero and with 1≦i≦n*m. A first conductor end of the n row conductors and m column conductors is connected to an evaluation circuit and every i sensor element is interconnected between two conductors each of the row conductors and the column conductors. The inventive circuit arrangement further comprises at least one return conductor whose first conductor end is connected to the evaluation circuit and whose second conductor end is contacted with the second conductor end of one of the row or column conductors.

Abstract: The present invention provides for a method (30) and system (10) for isolating the input nodes (3, 4) and/or the output nodes (5, 8) of an analog device (12) and performing continuity testing thereof without using relays. The system includes an analog device having a pair of input and output terminals and a plurality of resistors (R1-R3 and R4-R6) arranged in parallel and connected thereto. The method for testing continuity of the analog device includes providing a voltage input via at least one of the resistors to either input node, and then measuring the voltage at the same node via a resistor. If a diode drop from ground is sensed there is continuity, and if the applied voltage is sensed at the node there is not continuity. As a result, the invention advantageously isolates the nodes and removes any unwanted capacitance and impedance loading thereon during testing thereof.

Abstract: The voltage corresponding to the pressure outputted from a Wheatstone bridge having resistors R1 to R4 is amplified by a differential amplifier 3 and operational amplifiers OP1, OP2, and then outputted through an output terminal 4 to an external device as the output voltage VOUT. The offset voltage ZSOUT is outputted from the operational amplifier OP10. The output voltage VOUT and the offset voltage ZSOUT are fed back to the reference source voltage Vsen by operational amplifiers OP3 to OP5. In consequence, a non-linear output property of output-attenuating or output-increasing type can be easily obtained, while errors due to the offset voltage ZSOUT can be diminished.

Abstract: A device and method for measuring an impedance between first and second nodes in an electrical circuit without removing components includes at least one current source to provide first and second currents or current signals of known values. First and second probes contact the respective first and second nodes to apply the first and second currents. A third common probe contacts the circuit at a common node that experiences the same current flow as between the first and second nodes. At least one voltage meter measures voltages corresponding to the first and second currents. A processor calculates the impedance based on the known values of the currents, and the measured values of the voltages.

Abstract: A magneto-resistive device with built-in test structure. The magneto-resistive device includes a slider having first and second lower termination pads and first and second upper termination pads. A first conductive trace element electrically couples the first lower termination pad to the first upper termination pad and a second conductive trace element electrically couples the second lower termination pad to said second upper termination pad. The magneto-resistive device also includes a magneto-resistive transducer deposited on the slider and the resistance of the magneto-resistive transducer is obtained by passing an electrical current between the first and second lower termination pads and measuring a voltage across the first and second upper termination pads.

Abstract: A method comprises generating a first current level, measuring the first current level, generating a second current level, and measuring the second current level. The method further comprises alternately generating the first and second current levels repeatedly to generate a generate a periodic current waveform, and measuring the voltage at at least one port in a system a plurality of times to obtain a plurality of sets of voltage measurements. The plurality of sets of voltage measurements are averaged.

Abstract: A resistance-type liquid level measuring apparatus which suppresses a detection voltage error due to silver sulfide within a permissible range in practical use and enables measurement indication with accuracy, and comprises a resistance-type sensor including a float 9 floating according to a liquid level, an insulating substrate 6 having a plurality of conductor electrodes 4 connected with a resistor 5, and a movable contact interlocked with a movement of the float 9 to come in contact with the conductor electrodes 4 on the insulating substrate 6, in which a material containing silver is used as a material of the conductor electrodes 4 or the movable contact, a voltage dividing resistance 11 is connected with a power source BA in series with the resistor 5, and a voltage of a connection point between the voltage dividing resistance 11 and the resistor 5 is outputted as a signal corresponding to the liquid level, and resistance values of the voltage dividing resistance 11 and the resistor 5 are set so that a v

Abstract: A device for measuring a clearance between tips of blades of a ring of blades and an interior wall of a casing surrounding the ring of blades in a turbomachine includes a probe which is mounted radially on the casing. The probe has an end made of a material that can be abraded by the tips of blades as they rotate. The device also includes a printed circuit arranged in a mid-plane of the probe. The probe contains an axis of rotation of the ring of blades. Further, the printed circuit includes a number of adjacent U-shaped electrical circuits that have bases arranged in a probe end likely to be abraded by the tips of blades. The bases lie at different depths from a reference level defining the interior wall of casing. The printed circuit also includes a recognizer for determining which U-shaped electrical circuits have been broken by abrasion and which U-shaped electrical circuits are intact.

Abstract: Apparatus for use in measuring and/or monitoring the relative position or displacement of two elements, includes a pair of elongate electrical conductors (10, 11) adapted to be associated with the respective elements, and means (12, 13, 18) for disposing the conductors at a mutual separation such that a detectable quantum tunnelling current may be generated between them on application of an electrical potential difference between the conductors.

Abstract: A semiconductor device comprises a high-voltage detector for generating a test mode signal and a detection signal when a test mode setting signal is inputted from an input terminal for inputting, as a first input signal, any one of a normal signal and the test mode setting signal having a higher voltage than the normal signal, an input circuit for generating a normal mode signal in accordance with the normal signal, and a protection circuit for reducing an electric field between an input side and a low-voltage power supply side of the input circuit in accordance with the detection signal, the electric field being generated by inputting the test mode setting signal thereto.

Abstract: The present invention is related to a device (1) for measuring the quiescent current IDDQ drawn by an electronic device such as a CMOS device or an IC, from a supply voltage. The quiescent current is drawn in between switching peaks, and is a measure for the quality of a device under test. The measurement device of the invention comprises a current measuring unit (6), and parallel to this CMU (6), a current bypass unit CBU (20), comprising a power MOSFET. In the CBU of the invention, a connection (51) is present between a terminal other than the gate or base of one driver transistor and the source of the MOSFET, thereby minimising the charge transfer effects which are likely to occur during switching of the MOSFET. The invention is further related to a measurement device for IDDQ measurement comprising a current offset unit (21), which is aimed at improving the measurement range, without losing measurement resolution.

Abstract: An accelerated test method evaluates, under accelerated conditions (a temperature T2 and a voltage V2), an endurance characteristic of a ferroelectric memory device having a capacitor element including a ferroelectric film under actual operating conditions (a temperature T1 and a voltage V1). An acceleration factor (K) required to evaluate the endurance characteristic is derived by using an expression: logK=A(1/V1−1/V2)+B(1/V1T1−1/V2T2) (where each of A and B is a constant).

Abstract: The invention relates to a method and a circuit for measuring a voltage and a temperature and for generating a voltage with adjustable temperature dependence.

Abstract: A self-balanced active current bridge for measuring the impedance of an external device or an output current, including an input potential source and operation amplifier connected to the input potential source via a first input terminal of the operation amplifier. A balancing bridge is coupled to a first output terminal and a second output terminal of the operation amplifier. A controlled potential source is coupled to the balancing bridge and used to maintain the balance state of the balancing bridge. A resistance is connected between the balancing bridge and an output terminal of the controlled potential source. Wherein the external device is connected a first node between the balancing bridge and a second input terminal of the operation amplifier.

Abstract: In a method and system for assessing the stability of an electric power transmission network, where at least one pair of measurements including a first and a second measurement point (P1,P2), each measurement point comprising a voltage and a current phasor, is processed and where a Thévenin impedance (Zt) and a present stability margin (dS(k)) value are computed, a validity indicator (v) is computed which depends on whether there is a difference between the first and second measurement points and whether there is a difference between corresponding estimated first and second load impedances (Za). From all validity indicators (v) associated with all of the at least one pair of measurements a quality indicator (q) is computed that is associated with the Thévenin impedance value (Zt) and with the present stability margin (dS(k)). The invention allows to continuously compute and output a present stability margin (dS(k)) value and to provide a measure (q) of its quality.

Abstract: A voltage probe including a transmission line having an inner conductor and an outer conductor. An electrode is spaced apart from the outer conductor. A dielectric is disposed between the electrode and the outer conductor, adjacent an inner surface of the outer conductor. An exemplary method of implementing the voltage probe may include providing the dielectric adjacent the outer conductor. The electrode separated from the outer conductor by the dielectric and positioned adjacent to the dielectric is provided. A signal is measured from the electrode indicating a transmission voltage in the transmission line.

Abstract: A sensor array for measuring localized corrosion based on electrochemical reactions is disclosed. The sensor has an array of electrodes that are made from the material of interest. The electrodes are electrically insulated from each other and arranged so that a small area of the electrode contacts a corrosive environment. The voltage outputs across the electrodes connected to the electrodes are measured and used as the signals to indicate localized corrosion.

Abstract: A measurement system is provided that includes a probe device having an integrated amplifier. The integrated amplifier may be a transimpedence amplifier that amplifies input current to an output voltage.

Abstract: An orientation sensor especially suitable for use in an underground device is disclosed herein. This orientation sensor includes a sensor housing defining a closed internal chamber, an arrangement of electrically conductive members in a predetermined positional relationship to one another within the chamber and a flowable material contained within the housing chamber and through which electrical connections between the electrically conductive members are made such that a comparison between an electrical property, specifically voltage, of a first combination of conductive members to the corresponding electrical property of a second combination of conductive members can be used to determine a particular orientation parameter, specifically pitch or roll of the sensor.

Abstract: An impedance measuring apparatus for an electronic component measures the impedance of the electronic component using a four-terminal method. The impedance measuring apparatus for the electronic component includes a first current-carrying line and a first voltage detection line connected to one electrode of the electronic component. A first resistor establishes a connection between the first current-carrying line and the first voltage detection line. A second current-carrying line and a second voltage detection line are connected to the other electrode of the electronic component. A second resistor establishes a connection between the second current-carrying line and the second voltage detection line. In the impedance measuring apparatus, the first resistor and the second resistor have sufficiently high resistances compared to contact resistances occurring among the electrodes of the electronic component, the current-carrying lines, and the voltage detection lines.

Abstract: A device for controlling the temperature of a conductive member, which detects the electrical resistance of the conductive member, calculates the temperature of the conductive member based on the detected electric resistance, and adjusts the temperature of the conductive member based on the calculated temperature, is disclosed.

Abstract: A method for determining contact resistance between an automated test equipment (ATE) system and a device under test (DUT). The DUT is configured to drive a known voltage to a pin. The ATE system is then controlled to force a first test current into the DUT at that pin. A board precision measurement unit (BPMU) of the ATE system then measures the voltage VM+ required to force the first test current. The ATE system is then controlled to force a second test current to flow out of the DUT at the same pin. The ATE system controls the second test current to have the same magnitude (but opposite direction) as the first test current. The BPMU then measures the voltage VM− required to force the second test current. The contact resistance is then determined in response to the measured voltages VM+ and VM−, and the magnitude of the test current.

Abstract: A wideband precision current sensor employs DC-coupled and AC-coupled sensing circuits to generate lower and higher frequency sense signals; which are combined to form a wideband output signal that is proportional to a wideband current of interest. The frequency response of the wideband output signal is substantially flat across a wideband frequency range, 0 to 30 MHz for example, based on matching the frequency response of the DC- and AC-coupled sensing circuits. In an exemplary application, the current sensor provides feedback to a supply voltage (Vdd) amplifier used in RF envelope elimination and restoration (EER) applications.

Abstract: A sensor mat configuration includes a sensor mat having row lines, column lines, and a plurality of force-dependent resistors connected between the row lines and the column lines to form a matrix having rows and columns. The sensor mat configuration includes a printed circuit board having a plurality of fixed resistors. The first terminal of each one of the plurality of the fixed resistors is connected to a respective one of the column lines, and the second terminal of each one of the plurality of the fixed resistors are connected together, thereby forming an additional row of the matrix. The resistances of the plurality of the fixed resistors are known within a narrow tolerance range, which enables these resistors to be used in measurements for accurately determining the resistances of the force-dependent resistors of the sensor mat.

Abstract: A current detection equipment comprises a first coil and a second coil connected in series with the first coil. The current detection equipment is capable of detecting a current flowing through an object which is provided between the first and second coils or provided in a vicinity of the first or second coil. Each of the first and second coils having first conductive patterns provided on a surface of a substrate, a second conductive patterns provided on a back of the substrate and connecting parts which connect the first and second conductive patterns. A semiconductor device including the current detection equipment to measure the current flowing in a semiconductor element is also proposed.

Abstract: A rotor analyzer for an induction motor or generator checks and quantifies the integrity of a rotor that is not currently installed within its stator. The analyzer includes an electromagnetic coil that exposes the bars of a rotor to a pulsating magnetic field to induce a current through the bars. At the same time, the rotor is slowly rotated to sequentially expose each bar. A magnetic field created by the induced current in the bars induces an analog signal within a search coil. The analog signal is converted to digital and inputted to a microprocessor system. The system interprets the input data and manipulates it to provide a clear, understandable indication of the rotor's condition, such as the relative impendence of each bar. The system also determines how many bars are within a rotor having an unknown number of bars.

Abstract: A thermal head model type determining apparatus for a thermal printer having a print engine containing a replaceable thermal head and a printer controller for controlling the print engine. The thermal head model type determining apparatus includes a memory for storing model type information tables containing property data for each of a plurality of different thermal head model types, a measuring circuit for measuring properties of a thermal head provided in the print engine, a and thermal head model type identifying device for determining the model type of the thermal head provided in the print engine by comparing the properties measured by the measuring circuit with the model type information tables stored in the memory.

Abstract: The chloride corrosion threshold of a metal embedded in a cementitious structure is determined in an accelerated manner by using an electric field to increase the rate of migration of chloride ion into the structure and monitoring the interface between the metal and the cementitious material to detect the onset of corrosion, then determining the chloride corrosion threshold, which is defined as the chloride content of the cementitious material once corrosion has begun. This determination can be performed over a time period of as little as 2 to 3 weeks rather than the months or years required by conventional chloride corrosion test procedures.

Abstract: A method is provided for characterizing emulsion stability to evaluate suitability of the emulsion for use as a drilling fluid in drilling subterranean boreholes. The method provides a supplement or alternative to the standard method of determining Electrical Stability of the emulsion. In the method of the invention, Breakdown Energy is calculated. Breakdown Energy can be measured at the same test point as Electrical Stability. A digital storage oscilloscope and a computer are used in addition to an electrical stability meter.