Abstract: Described herein is a method and apparatus to wake-up analog bias signals with minimum delay. The apparatus comprises a first logic unit operable to adjust a signal level of a gated bias signal via a first predetermined signal in response to a power-down event; a comparator operable to compare the gated bias signal with an un-gated bias signal, and operable to generate an output signal indicating the comparison result; and a self-timed logic unit coupled to the comparator and operable to generate a wake-up signal in response to an end of the power-down event and the output signal.

Abstract: A circuit includes a charge pump and a feedback circuit. The charge pump coupled to a switch provides a control signal to the switch. The feedback circuit coupled to the charge pump receives the control signal and adjusts an operating frequency of the charge pump based upon the control voltage. The control voltage is adjusted to a predetermined target voltage by adjusting the operating frequency through the feedback circuit.

Abstract: Circuits, integrated circuits devices, and methods are disclosed that may include biasable transistors with screening regions positioned below a gate and separated from the gate by a semiconductor layer. Bias voltages can be applied to such screening regions to optimize multiple performance features, such as speed and current leakage. Particular embodiments can include biased sections coupled between a high power supply voltage and a low power supply voltage, each having biasable transistors. One or more generation circuits can generate multiple bias voltages. A bias control section can couple one of the different bias voltages to screening regions of biasable transistors to provide a minimum speed and lowest current leakage for such a minimum speed.

Abstract: Herein, a voltage sensing circuit, which is capable of controlling a pumping voltage to be stably generated in a low voltage environment, is provided. The voltage sensing circuit includes a current mirror having first and second terminals, a first switching element configured to control current on the first terminal of the current mirror by a reference voltage, a second switching element configured to control current from the second terminal of the current mirror in response to a pumping voltage, and a third switching element configured to control current sources of the first and second switching elements to receive a negative voltage.

Abstract: A method of controlling the provision of a body bias voltage to a logic gate region of a semiconductor device includes; gating application of a clock signal applied to a synchronization element in the logic gate region in accordance with an enable signal, and providing the body bias voltage to each body terminal of a plurality of logic gates arranged in the logic gate region in accordance with the enable signal.

Abstract: An integrated circuit (IC) including a first layer of a conducting material; a second layer of an insulating material, where the second layer has a first side arranged adjacent to the first layer, and a second side; and a substrate arranged adjacent to the second side of the second layer. A first well arranged in the substrate. The first well is adjacent to the second side of the second layer. The substrate and the first well have opposite doping.

Abstract: A mode determination apparatus in a semiconductor apparatus includes a first condition detection block configured to generate a first condition signal in response to a clock enable signal activated when the semiconductor apparatus enters a dynamic voltage scaling mode, a second condition detection block configured to generate a second condition signal in response to an external high voltage in the dynamic voltage scaling mode, the external high voltage having a voltage level in the dynamic voltage scaling mode different from a voltage level in a normal mode, and a signal processing block configured to generate a dynamic voltage scaling mode signal in response to the first condition signal and the second condition signal.

Abstract: A charge-discharge device has a current generating circuit, a charging circuit, a discharging circuit, and a signal processing circuit. The current generating circuit has a first transistor and a second transistor for generating a reference current. The charging circuit has a third transistor, coupled with the first transistor, for providing a charging current to a load according to the reference current. The discharging circuit has a fourth transistor, coupled with the second transistor, for providing a discharging current to the load according to the reference current. The signal processing circuit has a first input end coupled with the first and the second transistors, a second input end for coupling with the load, and an output end coupled with the first and the third transistors. The signal processing circuit amplifies the difference signal between the first end and the second input end to adjust the charging current and/or the discharging current.

Abstract: A multi-stage device for boosting an input voltage is discussed. Each stage of the device comprises a stage of a ring oscillator and a charge pump. An oscillating signal, generated by the ring oscillator within the device, drives the charge pump in each stage of the device. The charge pumps of the stages are serially connected. A final stage of the multi-stage device is adapted to provide voltage to a load circuit. The multi-stage device is applicable for generation of different bias voltages from one or more source voltages.

Abstract: A semiconductor integrated circuit includes a main circuit including a transistor, a pseudo-power supply line connected to a first power supply terminal of the main circuit, a first power supply line connected to the pseudo-power supply line via a first switch, a second power supply line connected to a second power supply terminal of the main circuit, a diode having a first end connected to the pseudo-power supply line and a second end connected to the first power supply line so that a potential difference between the pseudo-power supply line and the second power supply line is reduced in a conductive state, and a second switch having a first end connected to the pseudo-power supply line and a second end connected to the second power supply line.

Abstract: A charge pump regulator has a charge pump to establish a charge path and a discharge path alternately, so as to produce a regulated voltage on an output terminal. The charge pump has at least a current control element on the charge path or the discharge path to control the current flowing therethrough according to an output-dependent feedback signal.

Abstract: A system including a first transistor, a first capacitor and a circuit. The first transistor has a first control input and is configured to regulate an output voltage. The first capacitor is coupled at one end to the first control input and at another end to a circuit reference. The circuit is configured to provide a first voltage to the first control input, where the first voltage includes an offset voltage that is referenced to the output voltage and adjusted to compensate for variations in the first transistor.

Abstract: A high-voltage MEMS system compatible with low-voltage semiconductor process technology is disclosed. The system comprises a MEMS device coupled to a high-voltage bias generator employing an extended-voltage isolation residing in a semiconductor technology substrate. The system avoids the use of high-voltage transistors so that special high-voltage processing steps are not required of the semiconductor technology, thereby reducing process cost and complexity. MEMS testing capability is addressed with a self-test circuit allowing modulation of the bias voltage and current so that a need for external high-voltage connections and associated electro-static discharge protection circuitry are also avoided.

Abstract: In order to suppress an instantaneous carrying current (surge current) and power supply noise caused by the instantaneous carrying current (the surge current), the power supply cutoff structure of a semiconductor integrated circuit device comprises a switching circuit for controlling a power supply to a controlled circuit. The switching circuit includes a plurality of transistors each having a different current capability. The transistors are sequentially provided with a certain regularity, including from a low current capability transistor up to a high current capability transistor.

Abstract: The present invention relates to a method for controlling the supply voltage for an integrated circuit, which is connected to a voltage regulation module via a sense line, a voltage supply line and a bus wherein the supply voltage is provided by the voltage regulation module (10) via the voltage supply line. The supply voltage is composed of a reference voltage and a number of additional voltage levels. The reference voltage is defined by a voltage source and controlled by the integrated circuit via the bus, and the number of additional voltage levels is determined by the integrated circuit and send to the voltage regulation module via the sense line. Further the present invention relates to a corresponding apparatus with a voltage regulation module and an integrated circuit.

Abstract: A differential voltage controlled current source generating one or more output currents is based upon a single external resistor. The differential voltage controlled current source may generate an output current that is proportional to a received differential voltage and a bias current with the use of a single external resistor. The technique may be used to generate multiple accurate and process independent current sources. The current sources may be a zero temperature coefficient (ZTC) current, a proportional to absolute temperature (PTAT) current, or an inversely proportional to absolute temperature (NTAT) current. The output of the current sources may be inversely proportional to the resistance of the external resistor.

Abstract: Disclosed herein is a device that includes a bias line to which a bias current flows, a switch circuit controlling an amount of the bias current based on a control signal, a control line to which the control signal is supplied, and a cancellation circuit substantially cancelling a potential fluctuation of the bias line caused by changing the control signal, the potential fluctuation propagating via a parasitic capacitance between the control line and the bias line.

Abstract: Apparatus, systems, and methods are disclosed that operate to boost an electrical potential of a control terminal of a transistor from a signal on an input terminal of the transistor to render a channel in the transistor more conductive. Additional apparatus, systems, and methods are disclosed.

Abstract: A control circuit for substrate potential regulation for an integrated circuit device. The control circuit includes a current source configured to generate a reference current. A variable resistor is coupled to the current source. The variable resistor is configured to receive the reference current and generate a reference voltage at a node between the current source and the variable resistor. The reference voltage controls the operation of a substrate potential regulation circuit coupled to the node.

Abstract: A system and method for generating a rectified signal in a RFID tag. An alternating signal is received by the RFID tag, and a first phase of the alternating signal is coupled to a gate and to a first non-controlling terminal of a first switching transistor. The non-controlling terminal of the first switching transistor is one of a source and a drain of the first switching transistor. A first bias voltage is applied between the first non-controlling terminal and the gate of the first switching transistor and a rectified voltage is received between the first non-controlling terminal and a second non-controlling terminal of the first switching transistor.

Abstract: A charge pump regulator has a charge pump to establish a charge path and a discharge path alternately, so as to produce a regulated voltage on an output terminal. The charge pump has at least a current control element on the charge path or the discharge path to control the current flowing therethrough according to an output-dependent feedback signal.

Abstract: A voltage sensing circuit, which is capable of controlling a pumping voltage to be stably generated in a low voltage environment, is provided. The voltage sensing circuit includes a current mirror having first and second terminals, a first switching element configured to control current on the first terminal of the current mirror by a reference voltage, a second switching element configured to control current from the second terminal of the current mirror in response to a pumping voltage, and a third switching element configured to control current sources of the first and second switching elements to receive a negative voltage.

Abstract: An apparatus for dynamically varying a bias voltage that is applied to a substrate of an integrated circuit. The apparatus includes an adaptive bias generator, a state processor, and a fuse array. The adaptive bias generator is disposed on the integrated circuit, and is configured to generate a variable bias voltage according to a value received over a bias bus, where the variable bias voltage is applied to the substrate. The state processor is coupled to the adaptive bias generator, and is configured to receive one or more power management states, and is configured to provide the value over the bias bus, where the value is a function of the one or more power management states. The fuse array is operatively coupled to the state processor, and is configured to control one or more weighting values, where the weighting values are employed by the function to provide the value.

Abstract: An oscillation circuit, and a semiconductor device incorporating same, include: an oscillation unit with a plurality of inverters and configured to perform signal transmission between first and second nodes of the inverters such that each of the inverters performs an oscillation operation to generate clock signals having different phases when a control signal is activated, and latch a clock signal of the second node and cut off the signal transmission between the first and second nodes to stop the oscillation operations of the inverters when the control signal is deactivated; and a control unit to activate the control signal when an oscillation enable signal is activated, and deactivate the control signal using one of a clock signal output from an inverter connected to the second node and clock signals of which the phases lag that of a clock signal of the first node, when the oscillation enable signal is deactivated.

Abstract: A current mirror circuit exhibits improved current matching by applying a switching signal to ground path switches in series with transistors in both a reference path and an output path of the current mirror. The switching signal may comprise a high-frequency signal, which may be phase modulated. A plurality of matched, parallel-connected output transistors may be selectively enabled by qualifying the switching signal applied to each corresponding series-connected ground path switches by decoded digital modulation data. In one embodiment, the modulation data is decoded to thermometer-coded representation. In one embodiment, the switching signal path is identical to the reference and output circuits.

Abstract: Embodiments for at least one method and apparatus of a wireless transceiver are disclosed. For one embodiment, the wireless transceiver includes a transmit chain, wherein the transmit chain includes a power amplifier. The wireless transceiver additionally includes a receiver chain that is tunable to receive wireless signals over at least one of multiple channels, wherein the multiple channels are predefined. Further, the wireless transceiver includes a voltage converter. The voltage converter provides a supply voltage to the power amplifier, and operates at a single switching frequency, wherein the single switching frequency and all harmonics of the single switching frequency fall outside of the multiple channels.

Abstract: A distributed charge pump system uses a delay element and frequency dividers to generate out of phase pump clock signals that drive different charge pumps, to offset peak current clock edges for each charge pump and thereby reduce overall peak power. Clock signal division and phase offset may be extended to multiple levels for further smoothing of the pump clock signal transitions. A dual frequency divider may be used which receives the clock signal and its complement, and generates two divided signals that are 90° out of phase. In an illustrative embodiment the clock generator comprises a variable-frequency clock source, and a voltage regulator senses an output voltage of the charge pumps, generates a reference voltage based on a currently selected frequency of the variable-frequency clock source, and temporarily disables the charge pumps (by turning off local pump clocks) when the output voltage is greater than the reference voltage.

Abstract: According to one disclosed embodiment, an adaptive voltage rail circuit for integrating low voltage devices with high voltage analog circuits is described. This adaptive voltage rail circuit includes a high voltage analog circuit having a common mode voltage. Further included is a first voltage rail having a first rail voltage which is based on and greater than the common mode voltage of the high voltage analog circuit. A second voltage rail having a second rail voltage which is based on and less than the same common mode voltage is also present. By connecting these first and second voltage rails across at least one low voltage device, an adaptive voltage rail circuit is able to safely integrate low voltage devices with high voltage analog circuits in the same system.

Abstract: An apparatus and method for the dynamic detection and compensation of performance variations within an integrated circuit (IC) is provided to detect performance variations within the IC at any stage of test or operation. An arbitrary reference signal is utilized in conjunction with an internal oscillation device to establish a speed reference that may be used to characterize the IC. Dynamic detection and compensation may also be configured within a plurality of geographic locations within the IC, so that performance variations may be detected and compensated. Test data that is indicative of the IC's performance may be dynamically generated continuously, or at programmable intervals, so that performance variations caused by virtually any source may be substantially detected and compensated at any point in time of the IC's life cycle.

Abstract: A semiconductor memory apparatus includes a initialization signal generating unit configured to vary a voltage level of an external voltage in response to a detection signal, the external voltage enables a power-up signal, an internal voltage generating unit configured to produce an internal voltage, the internal voltage generating unit is initialized by the power-up signal, and a detection signal generating unit configured to produce the detection signal in response to a voltage level of the internal voltage.

Abstract: A charge pump circuit is provided that has a controllable ramp rate. The charge pump circuit may receive a control signal from a control circuit. The control signal may be asserted by the control circuit to turn on the charge pump circuit. When the charge pump circuit is turned on, the charge pump circuit produces an output voltage. The output voltage ramps up from an initial value to a desired target value. During the ramp up process, a ramp rate regulation circuit monitors the output voltage and ensures that the ramp rate does not exceed a desired maximum value. A capacitor may be charged at a desired ramp rate to use as a time-varying reference voltage. A feedback circuit may be used to maintain the output voltage at the desired target value once the ramp-up process is complete.

Abstract: A high-voltage selecting circuit generates an output voltage with no voltage drop by means of an auxiliary NMOS transistor turning on the corresponding selecting PMOS transistor of the high-voltage selecting circuit when the voltage levels of a first input voltage and a second input voltage are equal. In addition, when one of the first input voltage and the second input voltage is higher than the other one, the high-voltage selecting circuit avoids the leakage current by means of an auxiliary PMOS transistor turning off the corresponding selecting PMOS transistor of the high-voltage selecting circuit. In this way, the high-voltage selecting circuit can correctly generate the output voltage according to the first input voltage and the second input voltage, and avoid the leakage current at the same time.

Abstract: A voltage generation system that can dynamically calibrate a time period for enabling the system includes: a voltage generation circuit, for providing an output voltage; an oscillator, coupled to the voltage generation circuit, for driving the voltage generation circuit to generate the output voltage at a specific frequency according to an enable signal; a limiter, coupled to the oscillator and the output voltage fed back from the voltage generation circuit, for generating the enable signal to the oscillator according to the output voltage; and an enable controller, coupled to the limiter, the oscillator, the voltage generation circuit and the enable signal generated by the limiter, for enabling the limiter, the oscillator and the voltage generation circuit according to an estimated time between enable signals, wherein the estimated time is dynamically calibrated.

Abstract: A device for generating a pumping voltage and preventing an excessive increase in the pumping voltage includes a pumping voltage output unit that outputs a pumping voltage and adjusts the level of the pumping voltage in order to maintain a target voltage. The level of the pumping voltage is adjusted in response to a change in the level of the pumping unit. A release unit is included to detect an excessive pumping voltage. The release unit adjusts the level of the pumping voltage when the pumping voltage reaches a predetermined excessive level by compulsively decreasing the pumping voltage to prevent damage in the DRAM.

Abstract: An open-drain output buffer is operative to sustain relatively high voltages applied to an output pad. The open-drain buffer includes a number of floating wells, output switching devices and corresponding well-bias selectors to ensure that no gate oxide sustains voltages greater than a predefined value. PMOS and NMOS well-bias selectors operate to select and provide an available highest or lowest voltage, respectively, to bias corresponding well-regions and ensure no device switching terminals are electrically over stressed. As output related terminals experience switching related voltage excursions, the well-bias selectors select alternate terminals to continue selection of the respective highest or lowest voltages available and provide correct well-biasing conditions. Voltage dividers are incorporated to generate well-biasing control voltages.

Abstract: A high voltage control circuit of a semiconductor device includes an output node control circuit configured to set an initial potential of an output terminal or to discharge the potential of the output terminal, in response to an input signal and a high voltage supply circuit comprising an acceleration unit and a potential control unit coupled in series between the output terminal and a supply terminal for supplying a high voltage. The acceleration unit is operated in response to the potential of the output terminal, and the potential control unit is operated in response to the input signal.

Abstract: A mode determination apparatus in a semiconductor apparatus includes a first condition detection block configured to generate a first condition signal in response to a clock enable signal activated when the semiconductor apparatus enters a dynamic voltage scaling mode, a second condition detection block configured to generate a second condition signal in response to an external high voltage in the dynamic voltage scaling mode, the external high voltage having a voltage level in the dynamic voltage scaling mode different from a voltage level in a normal mode, and a signal processing block configured to generate a dynamic voltage scaling mode signal in response to the first condition signal and the second condition signal.

Abstract: A method and circuit are provided for implementing smart switched decoupling capacitors to efficiently reduce power supply noise in a logic circuit, and a design structure on which the subject circuit resides. The logic circuit includes a logic macro, a high-current event control signal activating a logic function, and a switched decoupling capacitor circuit integrated within the logic macro. The switched decoupling capacitor circuit uses the high-current event control signal to control capacitor switching to discharge to a voltage supply rail responsive to activating the logic function, and to charge the capacitors.

Abstract: A light emitting device (10) comprises an elongate first body (12) of a semiconductor material. A transverse junction (18) is formed in the first body between a first n+-type region (12.1) of the first body and a second p-type region (12.2). A third p+-type region (12.3) is spaced from the first region by the second region. A second body (22) of an isolation material is provided immediately adjacent at least part of the second region to at least partially encapsulate the first body. A terminal arrangement (28) is connected to the first body and is arranged to reverse bias the junction (18) into a breakdown mode. The device is configured such that a depletion region associated with the junction (18) extends through the second region (12.2) and reaches the third region (12.3) before the junction (18) enters the breakdown mode.

Abstract: A leakage manager system for adequately minimizing static leakage of an integrated circuit is disclosed. The leakage manager system includes a generator configured to generate a control signal to be applied to a sleep transistor. A monitor is configured to determine whether to adjust the control signal to adequately minimize the static leakage. In some embodiments, the monitor includes an emulated sleep transistor. A regulator is configured to adjust the control signal depending on the determination.

Abstract: A semiconductor integrated circuit includes a plurality of circuit regions, at least one power source switch that switches between two states of supplying power or not supplying power to at least one of the plurality of circuit regions, a power source control circuit that controls the at least one power source switch, a clamp scan chain having a plurality of flip-flops to which an output from the at least one circuit region to another region is input, and a clamp data control circuit that sets the plurality of flip-flops of the clamp scan chain to a predetermined output state.

Abstract: A combo semiconductor memory apparatus capable of reducing current and power consumption is provided. The semiconductor memory apparatus includes: a signal generator that generates a voltage control signal according to the level of an external voltage; and a voltage generator that pumps up the level of the external voltage in response to the voltage control signal and outputs the pumped voltage to a high-level voltage output terminal, or supplies the external voltage as a high-level voltage.

Abstract: A low noise current source includes first and second voltage input terminals. The current source further includes an amplifying device having an input terminal and an output terminal, where the output terminal is coupled to the second voltage input terminal via a load. The current source also includes a bias circuit coupled between the first voltage input terminal, the second voltage input terminal, and the input terminal. The current source additionally includes a first bypass circuit coupled between the first voltage input terminal and the input terminal, where the first bypass circuit configured to provide a substantially high electrical resistance and substantially no electrical impedance between the first voltage input terminal and the input terminal.

Abstract: A semiconductor integrated circuit (1) comprises a substrate voltage control circuit (10A), a drain current adjuster (E1), a MOS device characteristic detection circuit (20), and a drain current compensator (E2). The substrate voltage control circuit (10A) has at least one substrate voltage supply MOS device (m1) for controlling the supply of the substrate voltage of the semiconductor integrated circuit (1). The drain current adjuster (E1) adjusts the drain current of the substrate voltage supply MOS device (m1) by controlling the substrate voltage of the substrate voltage supply MOS device (m1). The MOS device characteristic detection circuit (20) has a characteristic detection device (m2) for detecting the characteristics of the substrate voltage supply MOS device (m1).

Abstract: A RF transceiver includes an antenna, a receiver, a baseband circuit, a transmitter, and a T/R switch circuit. The T/R switch circuit is used for coupling the antenna and the receiver or coupling the antenna and the transmitter. The T/R switch circuit is coupled to the baseband circuit so as to receive biases provided from the baseband circuit. The T/R switch circuit includes four transistors and a power detector. The power detector detects the power of the output signal of the T/R switch circuit, so that the baseband circuit can adjust biases provided to the T/R switch circuit according to the power of the output signal.

Abstract: A device that includes: (i) an evaluated circuit; (ii) a leakage current dependent oscillator configured to generate an oscillating signal that has an oscillating frequency that represents a leakage current of the evaluated circuit; (iii) a switching current dependent oscillator configured to generate an oscillating signal that has an oscillating frequency that represents a switching induced current of the evaluated circuit; (iv) a power reduction module that is configured to: (a) compare between an oscillation frequency of the leakage current dependent oscillator and an oscillation frequency of the switching current dependent oscillator, to provide a current comparison result; (b) select a power reduction technique out of a dynamic voltage and frequency scaling technique and a power gating technique in view of the current comparison result; and (c) apply the selected power reduction technique.

Abstract: In one embodiment, a current controller is configured to control a value of the current without regulating a voltage formed by the controller.

Abstract: An output driver of a semiconductor device includes driving transistors and a body bias providing unit. The driving transistors are coupled in parallel and configured to drive an output terminal. The body bias providing unit is configured to supply the driving transistors with respective body biases of at least two levels.

Abstract: Multistage charge pumps with diode loss compensation are disclosed. In one example, a pre-regulated charge pump to generate a voltage is described. The example pre-regulated charge pump includes a charge pump having a plurality of stages and one or more diodes. The stages are configured to generate an output voltage at an output terminal based on an input voltage and a number of the multiplier stages. The example pre-regulated charge pump also includes a pre-regulator stage configured to adjust the input voltage to remove dependency on supply voltage variation. The pre-regulator includes a feedback diode configured to compensate for one or more voltage drops associated with the one or more charge pump diodes.

Abstract: An integrated circuit with body-bias inputs coordinated by a switch at initial power application. A switch coupled to the N-well bias and P-type substrate bias lines of an integrated circuit selectively couples the substrate to ground or the substrate bias supply, depending upon the state of the bias supply lines. During power-up and the initial application of the N-well bias, the substrate is coupled to ground to prevent a leakage induce rise in the substrate potential. Upon sensing the presence of the substrate bias potential on the substrate bias line, the switch couples the substrate to the substrate bias line instead of ground. In another embodiment, a switch indirectly senses the availability of the substrate bias potential by sensing a charge pump enable signal.