Abstract: A boosting circuit, includes an output circuit including a first transmission circuit, transmitting charges of a first boosting node to a first output node according to a first transmission control signal, a detection circuit, detecting the voltage level of the first output node, and a pre-charge circuit pre-charging the first boosting node according a detection signal of the detection circuit; a first pump circuit includes a second transmission circuit, transmitting charges to a second output node according to a second transmission control signal, and a first capacitance unit, coupled to the first boosting node, boosting the voltage level of the first boosting node according to charges transmitted in the second output node; and a control circuit, coupled to the output circuit and the first pump circuit, controls the second transmission control signal according to the voltage level of the first output node.

Abstract: When writing into an antifuse memory element finishes, a value of resistance of the memory element rapidly decreases; accordingly, an output voltage of a boosting circuit which produces a writing voltage rapidly decreases. By detecting a change in the output voltage of the boosting circuit to control a writing command, the writing operation can be stopped immediately after the memory element is shorted. Thus, unnecessary current consumption caused by continuing a writing operation on the shorted memory element can be suppressed.

Abstract: Techniques for improving the linearity of radio-frequency (RF) front-end switches. In an aspect, open-loop techniques are disclosed for superimposing the output voltage of one or more negative rectifiers on a negative substrate bias voltage to reduce the non-linearities associated with voltage-dependent substrate leakage current. In another aspect, closed-loop techniques are further disclosed for maintaining the substrate bias voltage close to a reference voltage. Exemplary embodiments of the circuit blocks are further described.

Abstract: This application discusses, among other things, apparatus and methods for driving the bulk of a high-voltage transistor using transistors having gates with low-voltage ratings. In an example, a bulk driver can include an output configured to couple to bulk of a high-voltage transistor, a pick circuit configured to couple the output to an input voltage at an input terminal of the high-voltage transistor or an output voltage at the output terminal of the high-voltage transistor when the high-voltage transistor is in a high impedance state, and a bypass circuit configured to couple the output of the bulk driver to the output voltage when the high-voltage transistor is in a low impedance state.

Abstract: A circuit for clamping current in a charge pump is disclosed. The charge pump includes switching circuitry having a number of switching circuitry transistors. Each of first and second pairs of transistors in the circuit can provide an additional path for current from its associated one of the switching circuitry transistors during off-switching of that transistor so that a spike in current from the switching circuitry transistor is only partially transmitted through a path extending between the switching circuitry transistor and a capacitor of the charge pump.

Abstract: An inverter is capable of improving the reliability of driving. The inverter includes a first transistor and a second transistor. The first transistor is coupled between a first power source and an output terminal of the inverter, and has a first gate electrode coupled to a first input terminal of the inverter and a second gate electrode coupled to a third power source. The second transistor is coupled between the output terminal and a second power source, and has a first gate electrode coupled to a second input terminal of the inverter and a second gate electrode coupled to the third power source.

Abstract: A bulk-modulated current source includes: an output terminal configured to supply an output current; a first transistor comprising: a first electrode coupled to the output terminal, a second electrode, a bulk electrode, and a gate electrode configured to receive a bias voltage; and an amplifier comprising: an input terminal electrically coupled to the first electrode of the first transistor, and an output terminal electrically coupled to the bulk electrode of the first transistor.

Abstract: An electronic circuit includes: first circuits each including a first FET having a source supplied with at least one of a first voltage and a second voltage; and a second circuits each of which is associated with a respective one of the first circuits, and generates a back bias voltage applied to the first FET so as to change in accordance with a change of at least one of the first and second voltages.

Abstract: A high voltage FET device provides drain voltage information with less overall silicon area consumption by forming a spiral resistance poly structure over a drift region of the high voltage FET device. The spiral resistance poly structure has an inner most end coupled to a drain region, and an outer most end coupled to a reference ground.

Abstract: An integrated circuit includes a device of a first conductivity type formed in a first well; a voltage regulator configured to provide a bias voltage to the first well based on a first reference voltage which is generated using a first band gap reference generator; and a monitor circuit configured to compare a voltage of the first well to an upper limit and a lower limit of a first voltage range, wherein each of the upper limit and lower limit is provided using a second band gap reference generator, separate from the first band gap reference generator, wherein, in response to determining that the voltage of the first well is outside of the first voltage range, providing a first out of range indicator.

Abstract: A semiconductor integrated circuit device has, as a current monitor circuit, a circuit in which n-channel type MISFETs are connected in series with each other. Based on a delay time of a speed monitor circuit in a state where a substrate bias is being applied to the p-channel type MISFETs, a first voltage value of a first substrate bias to be applied to the p-channel type MISFETs is determined. Next, based on a current flowing through an n-channel type MISFET in a state where the first substrate bias is being applied to the p-channel type MISFETs of the current monitor circuit and a second substrate bias is being applied to the n-channel type MISFETs of the current monitor circuit, a second voltage value of the second substrate bias to be applied to the n-channel type MISFETs is determined.

Abstract: A dual-mode PMOS transistor is disclosed that has a first mode of operation in which a switched n-well for the dual-mode PMOS transistor is biased to a high voltage. The dual-mode PMOS transistor has a second mode of operation in which the switched n-well is biased to a low voltage that is lower than the high voltage. The dual-mode PMOS transistor has a size and gate-oxide thickness each having a magnitude that cannot accommodate a permanent tie to the high voltage. An n-well voltage switching circuit biases the switched n-well to prevent voltage damage to the dual-mode PMOS transistor despite its relatively small size and thin gate-oxide thickness.

Abstract: Self-biasing transistor switching circuitry includes a main transistor, a biasing transistor, a first capacitor, and a second capacitor. The body of the main transistor is isolated from the gate, the drain, and the source of the main transistor by an insulating layer. The first capacitor is coupled between the source and the gate of the main transistor. The second capacitor is coupled between the source and the body of the main transistor. The body and the drain of the main transistor are coupled together. The gate and the drain of the biasing transistor are coupled to the gate of the main transistor. The drain of the biasing transistor is coupled to the drain of the main transistor. The self-biasing transistor switching circuitry is adapted to receive an oscillating signal at the drain of the main transistor, and use the oscillating signal to appropriately bias the main transistor.

Abstract: A circuit, comprising a semiconductor device with one or more field gate terminals for controlling the electric field in a drift region of the semiconductor device; and a feedback circuit configured to dynamically control a bias voltage or voltages applied to the field gate terminal or terminals, with different control voltages used for different semiconductor device characteristics in real-time in response to a time-varying signal at a further node in the circuit.

Abstract: The present invention provides a switching device capable of further minimizing the ON resistance of a switching element. Switching element has hole injecting unit that includes injecting electrode which is directly connected to semiconductor substrate. Injection driving unit of driving unit is connected to injecting electrode and source electrode of switching element, and applies an injection voltage Vin between injecting electrode and source electrode. Injection driving unit injects holes from hole injecting unit to a hetero-junction interface of semiconductor substrate, by applying the injection voltage Vin exceeding a threshold value to switching element. Because the injected holes pull the equivalent amount of electrons to the hetero-junction interface, concentration of the 2-dimensional electron gas as the channel region becomes high, and the ON resistance of switching element 10 becomes small.

Abstract: A semiconductor integrated circuit device includes a power-supply terminal to which a power-supply voltage is input; and multiple MOS transistors including an Nch deplete mode MOS transistor functioning as a current source and at least one Pch enhancement mode MOS transistor formed on a silicon-on-insulator substrate including a silicon substrate, a buried-oxide film, and a silicon activate layer, each of the multiple MOS transistors dimensioned so that a bottom of a source diffusion layer and a bottom of a drain diffusion layer reach the buried-oxide film, the at least one Pch enhancement mode MOS transistor being connected to the supply terminal through the Nch depletion mode MOS transistor. The Nch depletion mode MOS transistor has electrical characteristics such that a source voltage thereof is higher than a silicon substrate voltage thereof and a saturation current of the Nch depletion mode MOS transistor is decreased.

Abstract: A DC-DC converter of a liquid crystal display (LCD) apparatus is provided comprising a first capacitor connected between a first node and a second node, a second capacitor connected between a third node and a fourth node, and a first diode connected between the input terminal and the first node.

Abstract: A charge pump system includes a charge pump that receives its clock signals, generated by an oscillator circuit, though a clock buffer. The clock buffer is power-controlled to reduce power consumption and output voltage ripple. The buffer is formed of a series of inverter that are connected to the power supply level through a clamping element, such as a transistor whose gate is controlled by a regulation signal based on feedback from the pump's output.

Abstract: The invention provides a cascode transistor circuit with a depletion mode transistor and a switching device. A gate bias circuit is connected between the gate of the depletion mode transistor and the low power line. The gate bias circuit is adapted to compensate the forward voltage of a diode function of the switching device. The depletion mode transistor and the gate bias circuit are formed as part of an integrated circuit.

Abstract: A method for controlling power supply current in a CMOS circuit, the method including applying a first predetermined voltage to a diode connected n-channel replica transistor, the n-channel replica transistor operating in weak inversion, applying a first substrate voltage to the substrate of the n-channel replica transistor so that the current flowing in the n-channel replica transistor equals a first predetermined target current, and applying the first substrate voltage to substrates of n-channel transistors in the CMOS circuit

Abstract: A charge pump phase-locked loop circuit includes an active loop filter, an adjustable reference voltage source, and a charge pump. The active loop filter includes an amplifier that has a negative input node, a positive input node, and an output node. The adjustable reference voltage source is coupled to the positive input node to provide an adjustable reference voltage. The charge pump is coupled to the negative input node to provide a current to or draw a current from the active loop filter in response to a signal from a phase detector. The charge pump includes a first current source coupled to a first voltage and a second current source electrically coupled to a second voltage, the second current source including a resistor. The second current source is configured such that a current provided by the second current source depends on a resistance value of the resistor and a difference between the reference voltage and the second voltage.

Abstract: Embodiments provide a switching device including one or more field-effect transistors (FETs). In embodiments, a resistive divider comprising a first resistor and a second resistor may be coupled with the FET at a position electrically between a gate terminal of the FET and a body terminal of the FET.

Abstract: A conventional circuit requires a booster circuit for generating a voltage higher than an external power supply voltage, thus low power consumption is difficult to be achieved. In addition, a display device incorporating the aforementioned conventional switching element for booster circuit has problems in that the current load is increased and the power supply becomes unstable with a higher output current.

Abstract: An electronic biasing circuit provides a DC bias voltage to a circuit to be biased. The biasing circuit has a first transistor and a second transistor. A gate of the first transistor is connected to a gate of the second transistor and supplies the DC bias voltage. A source of the first transistor is connected to a supply reference voltage. A source of the second transistor is connected to the supply reference voltage via a resistor element. The currents flowing through the first and second transistor are forced to be equal. A third transistor is connected in series with the first transistor and a fourth transistor is connected in series with the second transistor. Currents flowing through the third and fourth transistors are forced to be equal.

Abstract: An integrated circuit includes a first circuit. The first circuit includes a first transistor having a first dopant type. The first circuit further includes a first cascode transistor having the first dopant type, wherein the first cascode transistor connected in series with the first transistor. The first circuit further includes a second transistor having a second dopant type opposite to the first dopant type, wherein the second transistor is connected in series with the first transistor. The first circuit includes a second cascode transistor having the second dopant type, wherein the second cascode transistor is connected in series with the second transistor. The integrated circuit further includes a first bias circuit configured to adjust a threshold voltage of at least one of the first cascode transistor or the second cascode transistor.

Abstract: The present invention provides a switching device capable of further minimizing the ON resistance of a switching element. Switching element has hole injecting unit that includes injecting electrode which is directly connected to semiconductor substrate. Injection driving unit of driving unit is connected to injecting electrode and source electrode of switching element, and applies an injection voltage Vin between injecting electrode and source electrode. Injection driving unit injects holes from hole injecting unit to a hetero-junction interface of semiconductor substrate, by applying the injection voltage Vin exceeding a threshold value to switching element. Because the injected holes pull the equivalent amount of electrons to the hetero-junction interface, concentration of the 2-dimensional electron gas as the channel region becomes high, and the ON resistance of switching element 10 becomes small.

Abstract: A charge pump system includes a charge pump that receives its clock signals, generated by an oscillator circuit, though a clock buffer. The clock buffer is power-controlled to reduce power consumption and output voltage ripple. The buffer is formed of a series of inverter that are connected to the power supply level through a clamping element, such as a transistor whose gate is controlled by a regulation signal based on feedback from the pump's output.

Abstract: Self-biasing transistor switching circuitry includes a main transistor, a biasing transistor, a first capacitor, and a second capacitor. The body of the main transistor is isolated from the gate, the drain, and the source of the main transistor by an insulating layer. The first capacitor is coupled between the source and the gate of the main transistor. The second capacitor is coupled between the source and the body of the main transistor. The body and the drain of the main transistor are coupled together. The gate and the drain of the biasing transistor are coupled to the gate of the main transistor. The drain of the biasing transistor is coupled to the drain of the main transistor. The self-biasing transistor switching circuitry is adapted to receive an oscillating signal at the drain of the main transistor, and use the oscillating signal to appropriately bias the main transistor.

Abstract: Disclosed is a semiconductor device that includes an N-channel MOS transistor and a control voltage generation circuit. The N-channel MOS transistor controls the supply of a power supply voltage obtained by stepping down a DC voltage. The control voltage generation circuit clips the gate voltage of the N-channel MOS transistor at a control voltage not higher than a predetermined voltage in accordance with the DC voltage.

Abstract: A method and apparatus for repairing transistors may include applying a first voltage to a source, a second voltage to the gate and a third voltage to the drain for a predetermined time. In this manner the transistor structure may be repaired or returned to operate at or near the original operating characteristics.

Abstract: According to an embodiment, a semiconductor circuit includes a substrate, a tunnel oxide film, a charge storage film, a blocking layer, and plural nodes. The substrate is made of a semiconductor in which two diffusion layers each serving as either a source or a drain are formed. The tunnel oxide film is formed on a region of the substrate between the diffusion layers. The charge storage film is formed on the tunnel oxide layer and stores charge. The blocking layer is formed between the charge storage film and a gate electrode and has layers of a first oxide film, a nitride film and a second oxide film to have a thickness of 5 nm or larger but 15 nm or smaller. The nodes allow external application of voltages so that the source and the drain are reversed and allow detection a gate voltage, a drain current and a substrate current.

Abstract: A data persistence control apparatus for an RFID tag is provided. The apparatus includes a capacitor to be charged, a charge circuit to charge the capacitor, a discharge circuit to discharge the capacitor, a switch switched on to electrically connect the charge circuit to the capacitor or the discharge circuit to the capacitor, and an output circuit to output a logic high signal or a logic low signal according to an input voltage determined based on a discharged degree of the capacitor.

Abstract: A method includes receiving a first voltage at a first input circuit of a bi-directional charge pump circuit, selectively turning on a first switch of a switching circuit that is coupled electrically to a deep N-well transistor of a first set of one or more intermediate pump stages that are coupled between the first input circuit and a first output circuit, and providing a third voltage from the first output circuit in response to receiving a second voltage at an input of a first diode of the output circuit from the first set of the one or more intermediate pump stages.

Abstract: One or more techniques or systems for controlling a voltage divider are provided herein. In some embodiments, a control circuit is configured to bias a pull up unit of a voltage divider using an analog signal, thus enabling the voltage divider to be level tunable. In other words, the control circuit enables the voltage divider to output multiple voltage levels. Additionally, the control circuit is configured to bias the pull up unit based on a bias timing associated with a pull down unit of the voltage divider. For example, the pull up unit is activated after the pull down unit is activated. In this manner, the control circuit provides a timing boost, thus enabling the voltage divider to stabilize more quickly.

Abstract: An output buffer is provided. The output buffer is coupled to a first voltage source providing a first supply voltage and used for generating an output signal at an output terminal according to an input signal. The output buffer includes first and second transistors and a self-bias circuit. The first and second transistors are cascaded between the output terminal and a reference voltage. The self-bias circuit is coupled to the output terminal and the control electrode of the first transistor. When the output buffer does not receive the first supply voltage, the self-bias circuit provides a first bias voltage to the control electrode of the first transistor according to the output signal to decrease voltage differences between the control electrode and the input and output electrodes of the first transistor to be lower than a predetermined voltage.

Abstract: Embodiments provide a switching device including one or more field-effect transistors (FETs). In embodiments, a resistive divider comprising a first resistor and a second resistor may be coupled with the FET at a position electrically between a gate terminal of the FET and a body terminal of the FET.

Abstract: A well-biasing circuit for an integrated circuit (IC) includes a well-bias regulator for providing well-bias voltages (n-well and p-well bias voltages) to well-bias contacts (n-well and p-well bias contacts) of each cell of the IC when the integrated circuit is in STOP and STANDBY modes. A switch is connected between a core power supply and the well-bias contact for connecting and disconnecting the core power supply and the well-bias contact when the IC is in RUN and STOP modes, and STANDBY mode, respectively. A voltage inverter circuit and a CMOS inverter circuit enable and disable the switch when the IC is in the RUN mode, and STOP and STANDBY modes, respectively.

Abstract: A dual-mode PMOS transistor is disclosed that has a first mode of operation in which a switched n-well for the dual-mode PMOS transistor is biased to a high voltage. The dual-mode PMOS transistor has a second mode of operation in which the switched n-well is biased to a low voltage that is lower than the high voltage. The dual-mode PMOS transistor has a size and gate-oxide thickness each having a magnitude that cannot accommodate a permanent tie to the high voltage. An n-well voltage switching circuit biases the switched n-well to prevent voltage damage to the dual-mode PMOS transistor despite its relatively small size and thin gate-oxide thickness.

Abstract: A semiconductor apparatus includes a control unit configured to generate a first pumping enable signal and a second pumping enable signal which are alternately enabled, in response to an active signal; a first pumping voltage generation unit configured to perform a pumping operation during an enable period of the first pumping enable signal and generate a first pumping voltage; and a second pumping voltage generation unit configured to perform a pumping operation during an enable period of the second pumping enable signal and generate a second pumping voltage.

Abstract: A reference circuit includes an NMOS transistor, a PMOS transistor and a bias circuit. The NMOS transistor includes a source connected with a first voltage supply and a gate adapted to receive a first bias signal. The PMOS transistor includes a source connected with a second voltage supply, a gate adapted to receive a second bias signal, and a drain connected with a drain of the NMOS transistor at an output of the reference circuit. The bias circuit generates the first and second bias signals. Magnitudes the first and second bias signals are configured to control a reference signal generated by the reference circuit such that when the reference signal is near a quiescent value of the reference signal, a current in the reference circuit is below a first level, and when the reference signal is outside of the prescribed limits, the current in the reference circuit increases nonlinearly.

Abstract: According to one or more embodiments of the present invention, a method for driving a power semiconductor device that has a source electrode, a drain electrode, a semiconductor layer formed between the source electrode and the drain electrode, a plurality of gate electrodes formed within the semiconductor layer, and a plurality of conductive layers that are formed between the gate electrodes and the drain electrode and in electrical communication with the gate electrodes. The method comprises providing a first electric potential to the source electrode, providing a second electric potential to the drain electrode, providing a third electric potential to the gate electrodes, providing a first electric potential to at least one of the conductive layers, and providing a third electric potential to at least another one of the conductive layers.

Abstract: Exemplary embodiments disclose a semiconductor device which includes a function block including a plurality of transistors; a temperature detector configured to detect a driving temperature of the function block in real time; and an adaptive body bias generator configured to provide a body bias voltage to adaptively adjust leakage currents of the transistors according to the detected driving temperature, wherein the adaptive body bias generator is further configured to generate a body bias voltage corresponding to a predetermined minimum leakage current according to the driving temperature.

Abstract: Differential buffers are described that combine aspects of voltage-mode buffers with current injection to achieve the tunability associated with current-mode buffers as well as the low current and low power associated with voltage-mode buffers.

Abstract: A capacitor device includes a substrate including a first well having a first conductivity type and a first voltage applied thereto and a second well having a second conductivity type and a second voltage applied thereto; and a gate electrode disposed on an upper portion of the first well or an upper portion of the second well in such a way that the gate electrode is insulated from the first well or the second well, wherein capacitances of the capacitor device include a first capacitance between the first well and the second well and a second capacitance between the first well or the second well and the gate electrode.

Abstract: Disclosed herein is a device that includes a bias line to which a bias current flows, a switch circuit controlling an amount of the bias current based on a control signal, a control line to which the control signal is supplied, and a cancellation circuit substantially cancelling a potential fluctuation of the bias line caused by changing the control signal, the potential fluctuation propagating via a parasitic capacitance between the control line and the bias line.

Abstract: A system for testing the existing protection schemes of a power converter. The system simulates the voltage regulator producing a voltage level below an under-voltage threshold. The system simulates the voltage regulator producing a voltage level above an over-voltage threshold. The system simulates a short in the power converter pulling down the input bus. The system simulates a short in the power converter pulling down the output bus. The system measures the system responses to these simulations against responses of a properly operating system and determines if the power converter's protection schemes are operating correctly.

Abstract: A double-swing clock generator includes a first double-swing clock generation circuit and a second double-swing clock generation circuit. The first double-swing clock generation circuit is used for receiving a first voltage, a second voltage, a first clock, an inverse first clock, and a third voltage, and outputting a first double-swing clock. The second double-swing clock generation circuit is used for receiving a fourth voltage, the second voltage, the first clock, the inverse first clock, and the third voltage, and outputting a second double-swing clock.

Abstract: A reference circuit includes an NMOS transistor, a PMOS transistor and a bias circuit. The NMOS transistor includes a source connected with a first voltage supply and a gate adapted to receive a first bias signal. The PMOS transistor includes a source connected with a second voltage supply, a gate adapted to receive a second bias signal, and a drain connected with a drain of the NMOS transistor at an output of the reference circuit. The bias circuit generates the first and second bias signals. Magnitudes the first and second bias signals are configured to control a reference signal generated by the reference circuit such that when the reference signal is near a quiescent value of the reference signal, a current in the reference circuit is below a first level, and when the reference signal is outside of the prescribed limits, the current in the reference circuit increases nonlinearly.

Abstract: An integrated circuit including a substrate, multiple devices, and voltage control devices. The devices may include high threshold, low threshold, and standard threshold voltage devices. The devices and the voltage control devices are distributed across and coupled to the same substrate. Each voltage control device is configured to apply a back bias voltage at one of multiple discrete offset voltage levels. At least one voltage control device applies a first offset voltage level for back biasing high threshold voltage devices and at least one voltage control device applies a second offset voltage level for back biasing low threshold voltage devices. The selection of back biasing is based on relative population density of the different types of devices and varies across the substrate. Fine grain reverse back biasing reduces leakage current while reducing any performance decrease. Fine grain forward back biasing improves performance while reducing any leakage current increase.

Abstract: Biasing circuit for providing a supply voltage (Vdd) for an inverter based circuit. The biasing circuit is provided on a same die as the inverter based circuit, and includes a first shorted inverter circuit (T1, T2) and a second shorted inverter circuit (T3, T4). The first shorted inverter circuit (T1, T2) is connected in parallel to a series configuration of the second shorted inverter circuit (T3, T4) and a reference impedance (R). The first shorted inverter circuit (T1, T2) and second shorted inverter circuit (T3, T4) have different transistor geometries. A control circuit (T5-T11) is connected to the first shorted inverter circuit (T1, T2) and the second shorted inverter circuit (T3, T4), and supplied with a main supply voltage (Vdd). The control circuit (T5-T11) is arranged such that an equal current flows through the first shorted inverter circuit (T1, T2) and second shorted inverter circuit (T3, T4).