Abstract: A switching circuit controls the flow of current between its input and output in accordance with the state of a control signal applied to the circuit. When the control signal is in a first state and the voltage applied to the input is higher than the voltage at the output, the circuit provides a low resistance path between its input and output terminals thereby enabling current to flow from the input to the output. When the control signal is in the first state and the voltage at the output is higher than the voltage at the input, the circuit inhibits current flow from the output to the input. When the control signal is in a second state, the circuit is turned off thus inhibiting current flow between the input and the output.

Abstract: An integrated circuit (IC) includes at least one programmable digital logic cell that includes first dedicated digital logic cell having a plurality of transistors including at least one PMOS transistor and at least one NMOS transistor configured to perform at least one digital logical function. The first dedicated digital logic cell includes a plurality of nodes including at least one input node and at least one output node that reflects performance of a digital logical function. Programmable tuning circuitry includes at least one tuning input and at least one tuning circuit output. Circuitry for coupling or decoupling the tuning input or tuning circuit output to at least one of the plurality of nodes of the first dedicated digital logical cell is provided, wherein the coupling or decoupling is operable to change the processing speed for the first reprogrammable digital logic cell.

Abstract: A charge pump circuit for generating an output voltage is described. The charge pump includes multiple output generation stages connected in series and a corresponding set of multiple gate stages connected in series, where the output stages have the same structure as the corresponding gate stages. The switches that the provide the output of each output generation stage are controlled by the corresponding gate stage. The number of output stages that are active in boosting the voltage self-adapts according to the output level being regulated, with the later stages changing from a boosting operation to a filtering function with not being used to active boost the output.

Abstract: In order to resolve a problem of the conventional technique in which there is a charge pump capacitance which is not used when a boosting method of the charge pump is changed, in a charge pump circuit unit, a connection switching terminal selects a power source voltage, a logically-inverting buffer gate and a capacitor to conduct an operation of boosting the power source voltage so as to be twice the power source voltage, and a connection switching terminal outputs the boosted voltage as a boost control voltage. In a charge pump circuit unit, a connection switching terminal selects the boost control voltage outputted from the charge pump circuit unit, and a logically-inverting buffer gate and a capacitor conduct an operation of boosting the inputted voltage so as to be 3×VRD. An internal voltage is generated by outputting the boosted voltage to an internal power line via a NMOS transistor.

Abstract: Herein, a voltage sensing circuit, which is capable of controlling a pumping voltage to be stably generated in a low voltage environment, is provided. The voltage sensing circuit includes a current mirror having first and second terminals, a first switching element configured to control current on the first terminal of the current mirror by a reference voltage, a second switching element configured to control current from the second terminal of the current mirror in response to a pumping voltage, and a third switching element configured to control current sources of the first and second switching elements to receive a negative voltage.

Abstract: A semiconductor switch circuit is provided that enables current consumption to be reduced even in a conduction state. A semiconductor switch circuit 100 has P-type MOS transistors Q101 and Q102 for conduction that share a source and are connected in series between an input/output terminal 101 and input/output terminal 102, a P-type MOS transistor Q103 and N-type MOS transistor Q105 having drains connected to the gate of Q101, a P-type MOS transistor Q104 and N-type MOS transistor Q106 having drains connected to the gate of Q102, and a control terminal 103 connected to the gates of the transistors. Further semiconductor switch circuit 100 is configured with the sources and back gates of Q103 and Q104 connected to the sources of Q101 and Q102. Therefore, it is possible to switch the path between input/output terminal 101 and input/output terminal 102 between a conduction state and non-conduction state by means of voltage control by voltage value Vcont of a control signal applied to control terminal 103.

Abstract: This invention provides a semiconductor device structure formed on a conventional semiconductor-on-insulator (SeOI) substrate defined by a pattern defining at least one field-effect transistor having: in the thin film of the SeOI substrate, a source region, a drain region, a channel region, and a front control gate region formed above the channel region; and in the base substrate beneath the buried oxide of the SeOI substrate, a back control gate region, arranged under the channel region and configured to shift the threshold voltage of the transistor in response to bias voltages. This invention also provides patterns defining standard-cell-type circuit structures and data-path-cell type circuit structures that include arrays of the FET patterns provided by this invention. Such circuit structures also include back gate lines connecting the back gate control regions. This invention also provides methods of operating and designing such semiconductor device structures.

Abstract: A conventional circuit requires a booster circuit for generating a voltage higher than an external power supply voltage, thus low power consumption is difficult to be achieved. In addition, a display device incorporating the aforementioned conventional switching element for booster circuit has problems in that the current load is increased and the power supply becomes unstable with a higher output current.

Abstract: The nonlinearity effect of a rectifying element is enhanced, and further a resonant circuit is used to enlarge the input amplitude. Furthermore, the rectifying efficiency of a detection rectifier circuit is enhanced, thereby allowing the gain of an amplifier circuit in the following stage to be set to a low value. Signals having mutually opposite phases are inputted to RF input terminals (101,102). The signal at the terminal (102) is then inputted to the gate of a transistor (M1) via a capacitor (C3), while the signal at the terminal (101) is then inputted, via a capacitor (C1), to a node (N1) to which the source of the transistor (M1) and the gate and drain of a transistor (M2) are connected, whereby a capacitor (C2) is charged with a half-wave voltage-doubled rectified current. DC biases are inputted to terminals (301,302). There are formed series resonant circuits (L1,C15;L2,C16). A plurality of half-wave voltage-doubled rectifier circuits (M1,M2,C1-C3,R1) are connected in cascade.

Abstract: In a power supply apparatus for performing constant current driving of a light emitting diode which is a load circuit, a constant current circuit is disposed on a path for driving the load circuit. A charge pump circuit which is a voltage generating circuit outputs a driving voltage to the light emitting diode. A monitoring circuit monitors the voltage across the two ends of the constant current circuit. This monitoring circuit includes a voltage source which generates a threshold voltage that follows the fluctuation of the voltage at which the constant current circuit can operate stably, compares the voltage across the two ends of the constant current circuit and the threshold voltage generated by the voltage source, and outputs a comparison result Vs to a control unit. The control unit controls the charge pump circuit on the basis of the output of the monitoring circuit.

Abstract: An internal voltage generating circuit is capable of controlling an amount of charge pumping according to an external power supply voltage. The internal voltage generating circuit includes a periodic signal generating unit configured to control generation of periodic signals according to a level of an external power supply voltage, and a pumping unit driven according to the periodic signals generated by the periodic signal generating unit.

Abstract: SOI CMOS structures having at least one programmable electrically floating backplate are provided. Each electrically floating backplate is individually programmable. Programming can be performed by injecting electrons into each conductive floating backplate. Erasure of the programming can be accomplished by tunneling the electrons out of the floating backplate. At least one of two means can accomplish programming of the electrically floating backgate. The two means include Fowler-Nordheim tunneling, and hot electron injection using an SOI pFET. Hot electron injection using pFET can be done at much lower voltage than injection by tunneling electron injection.

Abstract: Display irregularities in light emitting devices, which develop due to dispersions per pixel in the threshold value of TFTs for supplying electric current to light emitting elements, are obstacles to increasing the image quality of the light emitting devices. An electric potential in which the threshold voltage of a TFT (105) is either added to or subtracted from the electric potential of a reset signal line (110) is stored in capacitor means (108). A voltage, in which the corresponding threshold voltage is added to an image signal, is applied to a gate electrode of a TFT (106). TFTs within a pixel are disposed adjacently, and dispersion in the characteristics of the TFTs does not easily develop. The threshold value of the TFT (105) is thus cancelled, even if the threshold values of the TFTs (106) differ per pixel, and a predetermined drain current can be supplied to an EL element (109).

Abstract: A circuit for generating negative voltage of a semiconductor memory apparatus includes a first detecting unit configured to generate a first detecting signal by detecting a first negative voltage level, a first negative voltage generating unit configured to generate the first negative voltage in response to the first detecting signal, a second detecting unit configured to generate a second detecting signal by detecting the second negative voltage level, a timing controlling unit configured to output the second detecting signal as an enable signal when a power up signal is enabled and the first detecting signal is disabled, and a second negative voltage generating unit configured to generate the second negative voltage in response to the enable signal.

Abstract: In one embodiment, an apparatus for reducing leakage in an electronic circuit (e.g., a CMOS circuit) includes a power switch transistor configured to selectively couple or decouple a voltage to a logic portion of the electronic circuit. The power switch transistor receives a first voltage during an active mode of the electronic circuit and receives a second voltage during a sleep mode of the electronic circuit. The power switch transistor has a bulk region that is biased using the first voltage during sleep mode. The power switch transistor has a gate region that is biased using the first voltage during sleep mode.

Abstract: An inverter device includes at least a first transistor connected between a power source node and ground. The first transistor includes a first gate and a first terminal that are internally capacitive-coupled to control a boost voltage at a boost node. The first terminal is one of a first source and a first drain of the first transistor.

Abstract: A dynamically self-bootstrapping circuit for a switch features a resistor in series with the control node of the switch. A bypass switch connects a control node to ground. When the switch is in an off-state, the bypass switch is enabled.

Abstract: A constant voltage boost power supply according to an aspect of the invention includes a voltage-controlled variable frequency oscillator that produces and supplies a clock signal and changes an oscillating frequency of the supplied clock signal according to an input control voltage; a charge pump into which the clock signal is fed, the charge pump performing a pumping operation in synchronization with the clock signal to boost an input voltage and supply an output voltage in which the input voltage is boosted; a voltage dividing circuit that divides the output voltage of the charge pump to supply a monitor voltage; and a differential amplifier into which the monitor voltage and a reference voltage are fed, the differential amplifier amplifying a potential difference between the monitor voltage and the reference voltage to supply the control voltage.

Abstract: The invention relates to electronic integrated circuits capable of operating either in active mode or in standby mode and of having, in standby mode, a very low current consumption. According to the invention, the leakage current of a power transistor inserted in series between a supply terminal and an active circuit is controlled by a gate reverse overbias in the following manner: a voltage step-up charge pump generates a gate bias voltage from pulses delivered by an oscillator having its frequency controlled by a current. The control current Ic is the leakage current of a transistor having technological characteristics similar to those of the power transistor. The system optimizes the current consumption in standby mode, the frequency of the oscillator being reduced when the gate is biased so as to minimize the leakage current. The invention is applicable to circuits powered by a battery or a cell (mobile telephones, cameras, portable computers, etc.).

Abstract: A reference buffer circuit with high driving capability is disclosed. In which, a buffering stage has a first NMOS transistor and a first PMOS transistor to provide high and low tracking voltages respectively based on a high input voltage and a low input voltage. A first driving stage is driven by the high and low tracking voltages to output a first high output voltage and a first low output voltage. A body of the first PMOS transistor is tied to a first bias voltage lower than a supply voltage for the buffering and first driving stages.

Abstract: A microprocessor including a substrate bias rail providing a bias voltage during a first operating mode, a supply node providing a core voltage, a clamp device coupled between the bias rail and the supply node, and control logic. The control logic turns on the clamp device to clamp the bias rail to the supply node during a second operating mode and turns off the clamp device during the first operating mode. The clamp devices may be implemented with P-channel and N-channel devices. Level shift and buffer circuits may be provided to control the clamp devices based on substrate bias voltage levels. The microprocessor may include a substrate with first and second areas each including separate substrate bias rails. The control logic separately turns on and off clamp devices to selectively clamp the substrate bias rails in the first and second areas based on various power modes.

Abstract: One embodiment is a gate drive circuitry for switching a semiconductor device having a non-isolated input, the gate drive circuitry having a first circuitry configured to turn-on the semiconductor device by imposing a current on a gate of the semiconductor device so as to forward bias an inherent parasitic diode of the semiconductor device. There is a second circuitry configured to turn-off the semiconductor device by imposing a current on the gate of the semiconductor device so as to reverse bias the parasitic diode of the semiconductor device wherein the first circuitry and the second circuitry are coupled to the semiconductor device respectively through a first switch and a second switch.

Abstract: The invention provides a shift register which can operate normally while suppressing a delay of signal and a rounding of waveform. The shift register of the invention includes a plurality of stages of flip-flop circuits each of which includes a clocked inverter. The clocked inverter includes a first transistor and a second transistor which are connected in series, a first compensation circuit including a third transistor and a fourth transistor which are connected in series, and a second compensation circuit including a fifth transistor and a transmission gate. According to the first compensation circuit, a timing at which a signal outputted from the flip-flop circuit rises or falls can be controlled in synchronization with an output of two stages before. The second compensation circuit can control a clock signal input can be controlled.

Abstract: Circuit, system and method of current control circuits are disclosed. In one embodiment, a control circuit includes a first MOS transistor and a second MOS transistor. The first source/drains of the first and the second MOS transistors are coupled to an output of a power source. A second source/drain of the first MOS transistor is coupled to a first output node of the current control circuit. A second source/drain of the second MOS transistor is coupled to a second output node of the current control circuit. The control circuit further includes a means to block flow of current from the first output node of the current control circuit to the second output node of the current control circuit.

Abstract: A dual dielectric tri-gate field effect transistor, a method of fabricating a dual dielectric tri-gate field effect transistor, and a method of operating a dual dielectric tri-gate effect transistor are disclosed. In one embodiment, the dual dielectric tri-gate transistor comprises a substrate, an insulating layer on the substrate, and at least one semiconductor fin. A first dielectric having a first dielectric constant extends over sidewalls of the fin, and a metal layer extends over the first dielectric, and a second dielectric having a second dielectric constant is on a top surface of the fin. A gate electrode extends over the fin and the first and second dielectrics. The gate electrode and the first dielectric layer form first and second gates having a threshold voltage Vt1, and the gate electrode and the second dielectric layer form a third gate having a threshold voltage Vt2 different than Vt1.

Abstract: A bias circuit for generating an output bias current includes a first transistor, a passive component, a second transistor, and a bias current generator. The first transistor has a first node coupled to a first reference voltage, a second node, and a control node. The passive component is coupled between the first reference voltage and the control node of the first transistor. The second transistor has a first node coupled to the control node of the first transistor, a control node coupled to the second node of the first transistor, and a second node for providing the output bias current according to a current passing through the passive component. The bias current generator is coupled to the second node of the first transistor, and implemented for providing the first transistor with a bias current.

Abstract: The present invention relates to an anti-fuse repair control circuit which regulates transmission of a power voltage and a back-bias voltage that are converted to repair an anti-fuse to a circuit part. As such, the present invention prevents the influence of a high power voltage or a low back-bias voltage on a circuit part such as a cell, a peripheral circuit, or a core region during an anti-fuse repair. The anti-fuse repair control circuit includes an anti-fuse repair enabling part providing an anti-fuse repair enabling signal corresponding to a repair of an anti-fuse; a power voltage control part controlling transmission of a power voltage to a first circuit part according to an enablement state of the anti-fuse repair enabling signal; and a back-bias voltage control part controlling transmission of a back-bias voltage to a second circuit part according to the enablement state of the anti-fuse repair enabling signal.

Abstract: A semiconductor integrated circuit includes a cascode circuit having a transistor, a detector circuit and a bias generator circuit. A bias is applied to a substrate of the transistor. The detector circuit generates a signal related to a threshold voltage of the transistor. The bias generator circuit generates the bias based on the signal generated by the detector circuit.

Abstract: A reversal charge pump circuit generates a negative voltage from an input voltage received from an input terminal, and provides an output terminal with the negative voltage. The charge pump circuit achieves increased voltage stability and avoids breakdown voltage problems, with an uncomplicated structure. The circuit may have first and second capacitors, first through fourth switches, and a voltage control circuit. The voltage control circuit controls the voltage provided to the first capacitor. The switches are on/off controlled by signals from a control circuit.

Abstract: A conventional circuit requires a booster circuit for generating a voltage higher than an external power supply voltage, thus low power consumption is difficult to be achieved. In addition, a display device incorporating the aforementioned conventional switching element for booster circuit has problems in that the current load is increased and the power supply becomes unstable with a higher output current.

Abstract: A charge pump circuit generates a desired output voltage by stepping up an input voltage. An LCD driver IC and an electronic appliance are provided with the charge pump circuit.

Abstract: A level shifter includes a level shifting circuit which receives input signal from a function block and changes the voltage level of the input signal, to output an output signal; a current blocking circuit, which suppresses current flowing to the level shifting circuit in an input suppression mode in which power supplied to the function block is cut and deactivates the level shifting circuit; and an output control circuit, which controls the output signal of the level shifting circuit to have a direct current (DC) voltage level in the input suppression mode.

Abstract: A negative voltage generator with AC coupled control signals is described. In an exemplary design, the generator includes four switches (which may be implemented with MOS transistors) and a capacitor. A first switch is coupled between a positive input voltage and a first end of the capacitor. A second switch is coupled between the first end of the capacitor and circuit ground. A third switch is coupled between a second end of the capacitor and circuit ground. A fourth switch is coupled between the second end of the capacitor and a negative output voltage. The first and second switches are controlled by first and second control signals, respectively. The third and fourth switches are controlled by first and second AC coupled control signals, respectively. The first and second AC coupled control signals may be generated by AC coupling the first and second control signals, respectively, and applying appropriate biasing.

Abstract: An SDRAM includes a DC-DC converter IC for generating a first internal power supply voltage from external power supply voltage, a regulator IC for generating a second internal power supply voltage lower than the first internal power supply voltage, from external power supply voltage, and a switching portion for supplying the first internal power supply voltage to an internal circuit in a normal operation mode and supplying the second internal power supply voltage to the internal circuit in a self-refresh mode. The switching unit allows the DC-DC converter IC and the regulator IC to operate simultaneously only for a prescribed overlapped period, at a time of operation mode switching. The DC-DC converter IC temporarily increases the first internal power supply voltage within the operating voltage range of the internal circuit in the overlapped period.

Abstract: A body-bias voltage controller includes: a plurality of transistors at least one of which is supplied with a body-bias voltage; a monitor circuit to detect voltage characteristics of the plurality of transistors and to output a indicator signal; and a body-bias voltage generator to generate the body-bias voltage based upon the indicator signal.

Abstract: Methods and circuits for implementing negative voltage regulators are provided. The negative voltage regulator circuit includes an operational amplifier (op-amp), a PMOS transistor, and two resistors. The op-amp is powered by positive and negative voltages, and the PMOS transistor has a gate in electrical communication with the op-amp. A first resistor is disposed between a positive reference voltage and a tap point, while the second resistor is disposed between the tap point and the output of the negative voltage regulator circuit. The use of the PMOS transistor facilitates a common drain output stage making the loop gain load independent, resulting in a stable system independent of current load.

Abstract: A multistage circuit for regulating the charge voltage or the discharge current of a capacitance of an integrated device at a certain charge-pump generated boosted voltage is implemented without integrating high voltage transistor structures having a type of conductivity corresponding to the same sign of the boosted voltage (high-side transistors). The multistage circuit current includes at least a first stage, and an output stage in cascade to the first stage and coupled to the capacitance. The first stage is supplied at an unboosted power supply voltage of the integrated device, and the output stage is supplied at an unregulated charge-pump generated boosted voltage. The first stage includes a transistor having a type of conductivity corresponding to an opposite sign of the boosted voltage and of the power supply voltage. The drain of the output stage transistor is coupled to the boosted voltage either through a resistive pull-up or a voltage limiter.

Abstract: A device includes an N-channel transistor for output, a voltage raising circuit, a voltage dropping circuit, and an amplifier. A power supply voltage that is a first voltage is supplied to one end of the output N-channel transistor, and the other end of the output N-channel transistor functions as an output terminal. The voltage raising circuit raises the first voltage to generate a second voltage higher than the first voltage. The voltage dropping circuit reduces the second voltage to generate a third voltage that is higher than the first voltage and is lower than the second voltage. The amplifier amplifies the difference between a reference voltage and a voltage generated at the output terminal, using the third voltage as a power supply voltage, to generate a fourth voltage, and supplies the fourth voltage to the gate of the N-channel transistor for output.

Abstract: Techniques for designing a highly differential single-ended-to-differential converter for use in, e.g., communications receivers. In an exemplary embodiment, an auxiliary current path including cascomp transistors is coupled to a main current path including input transistors and cascode transistors. The transistors are biased such that inter-modulation products generated by the auxiliary current path cancel out inter-modulation products generated by the main current path. In another exemplary embodiment, current source transistors for the main current path are adaptively biased depending on the level of the input signal received. In an exemplary embodiment, the techniques may be applied to designing a converter for interfacing a single-ended low-noise amplifier (LNA) output voltage with a differential mixer input in a communications receiver.

Abstract: A negative output regulator circuit (24) is provided with clamp circuits CLP (X1, X2, Q1, Q2), which detect a current generated when the output of a negative voltage (VM) is stopped and fixing the voltage of an output end (T2) at a prescribed value. Generation of a positive voltage at an output terminal is suppressed without increasing chip size nor making the sequence complicated.

Abstract: A transmission gate includes first and second MOS transistors of opposite conductivity type coupled in parallel with each other. Each transistor includes a body connection that is separately biased by corresponding first and second biasing circuits. The first biasing circuit generates a first bias voltage having a voltage level that is generated as a function of the signal at the first node and a first (for example, positive) reference voltage. The second biasing circuit generates a second bias voltage having a voltage level that is generated as a function of the signal at the first node and a second (for examples ground) reference voltage.

Abstract: A charge pump circuit has at least three stages: a pre-stage, a common stage and post stage. Each stage has three devices which are common. An NMOS device, which is called the charge injection device (CID), is controlled by a PMOS device during charge injection and an NMOS device during charge trapping. Also, each of the stages includes comparison stages for the CID in order to minimize the bulk to source voltage (Vbs) or bulk to drain voltage (Vbd). This greatly improves efficiency during the charge injection phase. Furthermore, the post-stage includes a comparison stage for the PMOS device since the threshold voltage increases as you increase the number of stages with the bulk tied to VPWR. The PMOS comparison stage should be inserted at the stage where the PMOS device begins to operate in the sub-threshold region, which is technology and voltage dependent.

Abstract: A semiconductor device including: a low threshold PMOS device formed over an N-type region, the source and drain of the low threshold PMOS formed in P-regions surrounded by N-regions; a low threshold NMOS device formed in a P-type region, the source and drain of the low threshold NMOS formed in N-regions surrounded by P-regions; first and second substrate bias generators, each connected to one of the low threshold devices for generating a substrate bias; a voltage source for generating substrate bias during a standby mode to reduce leakage current; wherein a low voltage threshold is established by the source and drain regions of the low threshold devices and their respective surrounding regions of opposite polarity.

Abstract: An internal voltage generation circuit includes a level detection unit configured to generate a detection voltage corresponding to a voltage level difference between a reference voltage with an internal voltage, an oscillation signal generation unit configured to generate an oscillation signal having a period corresponding to a voltage level of the detection voltage, and an internal voltage generation unit configured to generate the internal voltage in response to the oscillation signal.

Abstract: Embodiments for generating a boost voltage in a computing platform are disclosed.

Abstract: A charge pumping circuit consumes less current by reducing the number of charge pumps operating simultaneously. The charge pumping circuit includes a voltage sensor that detects a level of a high voltage and outputs a control signal based on the detection result. An oscillator provides an oscillating clock signal in response to the control signal of the voltage sensor, and the oscillator sequentially outputs the clock signal as a plurality of clock signals having shifted phases A plurality of high-voltage pumps are disposed in a plurality of regions to pump the high voltage in response to the clock signals and a different phase is designated for each region.

Abstract: A balanced input inverter circuit includes a first P-type MOS transistor including a gate terminal connected to an input, a source terminal connected to a first power source potential, and a drain terminal connected to an output, a first N-type MOS transistor including a gate terminal connected to the input, a drain terminal connected to the output, and a source terminal connected to a second power source potential, a first inverter circuit including an input terminal connected to an inverted input, and an output terminal connected to a back gate terminal of the first N-type MOS transistor, a first diode connected between the first power source potential and a first power source terminal of the first inverter circuit, a second inverter circuit including an input terminal connected to the inverted input, and an output terminal connected to a back gate terminal of the first P-type MOS transistor, and a second diode connected between the second power source potential and a second power source terminal of the sec

Abstract: The invention provides a shift register which can operate normally while suppressing a delay of signal and a rounding of waveform. The shift register of the invention includes a plurality of stages of flip-flop circuits each of which includes a clocked inverter. The clocked inverter includes a first transistor and a second transistor which are connected in series, a first compensation circuit including a third transistor and a fourth transistor which are connected in series, and a second compensation circuit including a fifth transistor and a transmission gate. According to the first compensation circuit, a timing at which a signal outputted from the flip-flop circuit rises or falls can be controlled in synchronization with an output of two stages before. The second compensation circuit can control a clock signal input can be controlled.

Abstract: In one embodiment, a first transistor is comprised of a first p+ source region doped in an n-well in the substrate and a first n+ drain region doped on one side at the top of the pillar. A second transistor is comprised of a second p+ source region doped into the second side of the top of the pillar and serially coupled to the top drain region for the first transistor. A second n+ drain region is doped into the substrate adjacent the pillar. Ultra-thin body layer run along each pillar sidewall between their respective active regions. A gate structure is formed along the pillar sidewalls and over the body layers. The transistors operate by electron tunneling from the source valence band to the gate bias-induced n-type channels, along the ultra-thin silicon bodies, thus resulting in a drain current.

Abstract: A conventional circuit requires a booster circuit for generating a voltage higher than an external power supply voltage, thus low power consumption is difficult to be achieved. In addition, a display device incorporating the aforementioned conventional switching element for booster circuit has problems in that the current load is increased and the power supply becomes unstable with a higher output current.