Abstract: A sense-amplifier based on current-source-evaluation. Compared to conventional sense-amplifiers, a design based on static-current sources scales better to small transistor geometries. The design has lower power consumption, reduced noise, and improved clock scaling.

Abstract: In a DRAM memory circuit, the sense amplifiers, for amplifying the differential voltage sensed between the cores of a bit line, in each case contain two transistor circuits, each of which has two switching transistors. The first transistor circuit pulls the lower potential of the sensed differential voltage down to a defined low logic potential. The second transistor circuit pulls the higher potential up to a defined high logic potential. According to the invention, all the transistors in the sense amplifier are field-effect transistors of the same conduction type, in the case of which the channel is at low impedance if the gate potential is higher than the source potential at least by the amount of the threshold voltage Vth.

Abstract: An input circuit includes a data input unit for receiving input data of the input circuit. A data latch unit latches output data of the input circuit. A reset unit resets the data latch unit in response to a first logic level of a first clock signal. A latch enhancement unit enhances the latching operation of the data latch unit in response to a first logic level of a second clock signal that is delayed in phase from the first clock signal. A clock synchronization unit transfers the input data from the input unit to the data latch unit in response to a second logic level of the first clock signal, the clock synchronization unit blocking a feedthrough current that flows through the reset unit, the data latch unit, and the latch enhancement unit when the first and second clock signals are in a first logic level state.

Abstract: A sensor for a switching circuit detects the logical state of the switching circuit by monitoring the current flow through the switching circuit. The current flow is conditioned by one or more current limiters and a voltage regulator, coupled in series with the switching circuit. The sensor also includes a current limit control circuit coupled to each of the current limiters. The sensor is effectively shielded from the effect of parasitic capacitance in the switching device because the current flow through the switching circuit reacts immediately and without regard to the level of parasitic capacitance whenever the switching circuit makes a state change.

Abstract: A sense amplifier circuit includes a latch circuit to enhance the speed of a sensing operation and to obviate the need for a latch circuit to capture the output value of the sense amplifier circuit. In one embodiment, first and second differential amplifiers provide a differential signal to the latch circuit. The high gain in the latch circuit resolves the differential signal to a logic signal, which is then provided to an output amplifier. In one embodiment, the differential signal is provided to the latch circuit after the differential signal across the input terminals of the first and second differential amplifiers exceeds a predetermined value.

Abstract: A sampling receiver includes: at least one slave latch circuit; and at least one master latch circuit which further includes: at least one differential input transistor pair, and at least one bistable circuit. Output terminals of the at least one differential input transistor pair and output terminals of the at least one bistable circuit are coupled to the at least one slave latch circuit but in parallel to each other with reference to the at least one slave latch circuit for the purpose of reducing an output impedance to allow the sampling receiver to exhibit a high speed latch operation.

Abstract: The input buffer circuit includes an input stage providing a switching point voltage based on a predetermined switching point set between a first and second reference voltages that maximizes the high and low noise margins of the input buffer. The input buffer circuit further includes an output stage. The output stage is coupled to the input stage. The output stage receives the switching point voltage from the input stage and amplifies the switching point voltage to a full logic level voltage.

Abstract: A sense amplifier includes a feedback controlled bit line access scheme that feeds a sense amplifier output signal back to control operation of its associated bit line access transistor. This feedback may be implemented using a pair of inverter circuits each coupling a respective output signal to the control gate of the associated access transistor. Alternatively, the feedback may be implement using a logic gate which logically combines the sense amplifier output signals together to generate an output signal for controlling operation of both access transistors. The logic gate is preferably a NAND gate. The sense amplifier further includes a cross-connected feedback inversion circuit which inverts a sense amplifier output signal from a first latch inverter for application to a conducting line of a second latch inverter.

Abstract: A sense amplifier has a pair of internal nodes that are precharged to a power-supply level. A first pair of n-channel transistors supplies current to the internal nodes responsive to a pair of data signals, both of which are initially high. When one of the data signals begins falling toward the low level, the corresponding n-channel transistor immediately reduces the current supplied to one of the internal nodes. A second pair of n-channel transistors, cross-coupled to the internal nodes, amplifies the resulting potential difference between the internal nodes, thereby pulling down the potential of one of the internal nodes. An output signal is generated from one or both of the internal nodes. The output signal is obtained quickly, because amplification begins without delay.

Abstract: A method and apparatus for providing quadrature biasing for coupled-pair circuits. A QBCP-circuit for quadrature amplifiers provides a new input common-mode sense point that separates the inputs for the differential-and-common mode feedback-control loops. The QBCP circuit biases all four transistors equivalently and reduces the feedback-loop interaction, thereby simplifying the bias control system and improves the voltage-transfer frequency-response performance.

Abstract: A current sense amplifier includes a pair of cross-coupled transistors, each transistor being connected between a respective input signal line and a respective output signal generating node, for amplifying voltage difference between the output signal generating nodes. Additionally, the current sense amplifier may include a constant current circuit connected between the output signal generating nodes and a common node for allowing current to flow between the common node and the output signal generating nodes in response to a bias voltage; and a voltage generating circuit for causing a voltage difference between the output signal generating nodes by being turned on in response to a respective output signal.

Abstract: Disclosed is an apparatus and method for decreasing the timing delay variation of output signals obtained from an SOI technology sense amplifier. The cross-coupled latch includes FETs where the body is connected to one of source and drain to minimize switching history effects while the input FETs have a higher than normal gate switching voltage to increase input signal sensitivity.

Abstract: A comparator unit includes a first amplifier stage and a second amplifier stage. The first amplifier stage includes a differential amplifier having a pair of input nodes for receiving a differential signal and a pair of output nodes, a switch connected across the pair of output nodes, and a non-linear load connected across the pair of output nodes. The second amplifier stage is coupled to the pair of output nodes of the first amplifier stage. In one embodiment the second amplifier stage is a non-linear amplifier. In an alternative embodiment, the differential amplifier is a differential pair. In another alternative embodiment, the differential amplifier is a pair of differential pairs.

Abstract: A sense amplifier that is capable of sensing small differential voltage between two inputs with full voltage range includes a first inverter 305 and 306; a second inverter 307 and 308 cross coupled with the first inverter; a first transmission gate 301 coupled between a reference node REF and an input of the first inverter; a second transmission gate 302 coupled between a data node RD and an input of the second inverter; a pull-up enable switch 303 coupled between a high side voltage source node VDD, and the first and second inverters; and a pull-down enable switch 304 coupled between a low side voltage source node, and the first and second inverters.

Abstract: A circuit includes a first node having a first variable voltage and a second node having a second variable voltage. A clock signal generates the first variable and second variable voltages. A first transistor is coupled to the first node and provides a first current responsive to a first control voltage being applied to the first transistor gate. A second transistor is coupled to the second node and provides a second current responsive to a second control voltage being applied to the second transistor gate. A first control circuit is coupled to the first transistor gate and the second node. The first control circuit provides the first control voltage responsive to the first variable voltage. A second control circuit is coupled to the second transistor gate and the first node. The second control circuit provides the second control voltage responsive to the second variable voltage. The first and second currents are used to provide a duty cycle correction signal.

Abstract: The present invention provides a semiconductor integrated circuit device equipped with an input circuit capable of stably performing a high-speed operation up to a low voltage. A rail to rail circuit constitutes a differential input circuit, and a circuit similar to such a differential input circuit is used to constitute a bias circuit. A pair of output terminals of a differential circuit constituting such a bias circuit is commonly connected to form a bias voltage corresponding to a middle point. The bias voltage is supplied to the gates of current source MOSFET and the gates of cascode-connected MOSFETs in the differential input circuit, and the gates of the corresponding current source MOSFETs and cascode-connected MOSFETs in the bias circuit corresponding to itself.

Abstract: A negative voltage switch for use in flash memory. The switch has a control end and two voltage output ends, and includes two inverting units for transferring a positive voltage, two driving units for transferring a negative voltage, and two negative voltage pass-gate transistors for respectively transferring the negative voltage to the voltage outputs. Each inverting unit connects to a driving unit at a corresponding node, and each negative voltage pass-gate transistor connects to one of the nodes. According to a voltage at the control end, the switch turns on one inverting unit to transfer the positive voltage at the corresponding node, and the driving unit connected to the other node turns on to transfer the negative voltage to the corresponding negative voltage pass-gate transistor such that the negative voltage pass-gate transistor stops outputting the negative voltage at the other voltage output.

Abstract: The present invention provides a clock signal input circuit that is able to provide inverse internal clock signals generated by the same input buffer as the address and data signals which exhibit reduced skew. When a skewed external noninverse clock signal and a corresponding external inverse clock signal are passed through respective reference voltage input buffers there is no reduction in skew between the two internal signals. In a preferred embodiment, the invention provides back to back inverters connected to both lines carrying the noninverted and inverted internal clock signals. The slower internal clock signal has an extra inverter driving it when it switches states and the faster internal clock signal has an extra inverter fighting it when it switches states. The skew of the two signals is reduced, allowing for faster operation of the integrated circuit and a reduction in misread data signals.

Abstract: An active cascode differential latch for providing a logic output signal indicative of whether or not a first current is greater than a second current. The first and second currents are fed into two input ports of the active cascode differential latch. The active cascode differential latch has a relatively small input impedance, and has utility for comparators and discrete-time analog filters, to name just a few, particularly when used in high bandwidth and low voltage applications.

Abstract: A sense amplifier that is capable of sensing small differential voltage between two inputs with full voltage range includes a first inverter 305 and 306; a second inverter 307 and 308 cross coupled with the first inverter; a first transmission gate 301 coupled between a reference node REF and an input of the first inverter; a second transmission gate 302 coupled between a data node RD and an input of the second inverter; a pull-up enable switch 303 coupled between a high side voltage source node VDD, and the first and second inverters; and a pull-down enable switch 304 coupled between a low side voltage source node, and the first and second inverters.

Abstract: A sense amplifier for a memory device comprising: a first sensing stage comprising a first sensing device and a second sensing device operably connected to a first sense line and a second sense line respectively, to reduce the capacitive load on the first sense line and second sense line. A source terminal of the sensing device is connected to a switchable current sink with drain terminal thereof connected to an input of a second sensing stage. The sense amplifier also includes a second sensing stage comprising cross-coupled inverters responsive to the first sensing stage, the second sensing stage is activated by a sense enable signal following a selected delay, and an output driver responsive to the second sensing stage.

Abstract: A dynamically controlled amplifier circuit includes a first difference circuit having a first primary differential amplifier and a first crossover differential amplifier running in parallel with the first primary differential amplifier. A second difference circuit has a second primary differential amplifier and a second crossover differential amplifier running in parallel with the second primary differential amplifier. An input terminal is coupled to control electrodes of the first primary differential amplifier and to control electrodes of the second primary differential amplifier. An output terminal of the first primary differential amplifier is coupled to control electrodes of the second crossover differential amplifier, and an output terminal of the second primary differential amplifier is coupled to control electrodes of the first crossover differential amplifier.

Abstract: A sense amplifier having a synchronous reset capability or an asynchronous reset capability, which is readily implemented and has high speed, is provided. The sense amplifier includes a first sense-amplifying unit which sense-amplifies an input signal in response to a clock signal and generates an output signal, and a second sense-amplifying unit which sense-amplifies a complementary signal of the input signal in response to the clock signal and generates a complementary signal of the output signal. The sense amplifier further includes a first controller which is connected to the first sense-amplifying unit and sets the output signal in response to a reset signal and an inverted signal of the reset signal, and a second controller which is connected to the second sense-amplifying unit and resets the complementary signal of the output signal in response to the reset signal and the is inverted signal of the reset signal.

Abstract: A sensor for a switching circuit detects the logical state of the switching circuit by monitoring the current flow through the switching circuit. The current flow is conditioned by one or more current limiters and a voltage regulator, coupled in series with the switching circuit. The sensor also includes a current limit control circuit coupled to each of the current limiters. The sensor is effectively shielded from the effect of parasitic capacitance in the switching device because the current flow through the switching circuit reacts immediately and without regard to the level of parasitic capacitance whenever the switching circuit makes a state change.

Abstract: A sense amplifier includes a feedback controlled bit line access scheme that feeds a sense amplifier output signal back to control operation of its associated bit line access transistor. This feedback may be implemented using a pair of inverter circuits each coupling a respective output signal to the control gate of the associated access transistor. Alternatively, the feedback may be implement using a logic gate which logically combines the sense amplifier output signals together to generate an output signal for controlling operation of both access transistors. The logic gate is preferably a NAND gate. The sense amplifier further includes a cross-connected feedback inversion circuit which inverts a sense amplifier output signal from a first latch inverter for application to a conducting line of a second latch inverter.

Abstract: A circuit including a differential sense circuit and a latch, the differential sense circuit and the latch coupled so as to form a differential sense latch such that, in operation, an electronic signal stored in the latch is retained for at least one clock cycle.

Abstract: Structures and methods for improving sense amplifier operation are provided. A first embodiment includes a sense amplifier having a pair of cross-coupled inverters. Each inverter includes a transistor of a first conductivity type and a pair of transistors of a second conductivity type which are coupled at a drain region and are coupled at a source region. The drain region for the pair of transistors is coupled to a drain region of the transistor of the first conductivity type. A pair of input transmission lines are included where each one of the pair of input transmission lines is coupled to a gate of a first one of the pair of transistors in each inverter. A pair of output transmission lines is included where each one of the pair of output transmission lines is coupled to the drain region of the pair of transistors and the drain region of the transistor of the first conductivity type in each inverter.

Abstract: A method and apparatus for mitigating the hysteresis effect in a sensing circuit used in the evaluation of a property of a system under test. A state monitor circuit is included for detecting the sensing circuit's state upon evaluating the system's property, e.g., a data out signal level. A feedback control generator is provided for generating a control signal operable to transition the sensing circuit's state to a balanced state, wherein the control signal's logic state is capable of being modified substantially immediately upon completion of the evaluation operation.

Abstract: A differential output circuit includes first and second inputs, first and second outputs, a resistor element connected between the outputs, first and second N-channel MISFETs, and first and second P-channel MISFETs. The inputs respectively receive first and second complementary input signals. The first N-channel MISFET has a source connected to the first input, a gate receiving a power supply potential, and a drain connected to the first output. The second N-channel MISFET has a source connected to the second input, a gate receiving the power supply potential, and a drain connected to the second output. The first P-channel MISFET has a source receiving the power supply potential, a gate connected to the second input, and a drain connected to the first output. The second P-channel MISFET has a source receiving the power supply potential, a gate connected to the first input, and a drain connected to the second output.

Abstract: An integrated circuit formed on a semiconductor chip, comprising a low pass filter circuit having a first resistor of a first resistance value and a capacitor of a first capacitance value, wherein the first resistance value and the first capacitance value determine a corner frequency of the filter; and a tuning circuit having a second resistor of a second resistance value, a switched-capacitor of a third resistance value and a comparator that compares two voltage signals to produce a control signal, wherein the control signal adjusts the first and second resistance values as a function of the third resistance value. The corner frequency of the filter can be adjusted by varying one or more reference voltage signals. In combination, the corner frequency of the filter is adjusted by changing the frequency of a clock that controls the switched-capacitor to decrease the circuit sensitivity.

Abstract: A sense amplifier that is configurable to operate in two modes in order to control a voltage swing on the sense amplifier output. The sense amplifier has two feedback paths including a first feedback path having a transistor with a fast response time in order to allow the circuit to operate as fast as possible, and a second feedback path for providing voltage swing control. In the first operating mode, the “turbo” mode, both feedback paths are in operation to provide a higher margin of swing control, thus higher sensing speed. In the second operating mode, the “non-turbo” mode, only the first feedback path is in operation which allows for greater stability and a reduction in power consumption.

Abstract: A method and apparatus for interfacing two voltage domains is presented. In one embodiment of the present invention, a method and apparatus for interfacing a high voltage domain with a low voltage domain is presented. In one embodiment of the present invention, high output signals and low output signals are generated with a level-shifter. The level-shifter is used to interface the two domains. The low output signals are generated using a low-voltage driver and a first clipping stage. The high output signals are generated using a high-voltage driver and a second clipping stage. Duty-cycle distortion is lowered or eliminated by using an accelerator to accelerate the transition between the high output signals and the low output signals. Bias signals are input into the first and second stage. The bias signals work in a coordinated manner, to constrain the minimum and maximum outputs of various components in the level-shifter.

Abstract: A 256 Meg dynamic random access memory is comprised of a plurality of cells organized into individual arrays, with the arrays being organized into 32 Meg array blocks, which are organized into 64 Meg quadrants. Sense amplifiers are positioned between adjacent rows in the individual arrays while row decoders are positioned between adjacent columns in the individual arrays. In certain of the gap cells, multiplexers are provided to transfer signals from I/O lines to data lines. A datapath is provided which, in addition to the foregoing, includes array I/O blocks, responsive to the datalines from each quadrant to output data to a data read mux, data buffers, and data driver pads. The write data path includes a data in buffer and data write muxes for providing data to the array I/O blocks. A power bus is provided which minimizes routing of externally supplied voltages, completely rings each of the array blocks, and provides gridded power distribution within each of the array blocks.

Abstract: An improved pull-down latch circuit is provided for better latch performance. Previous pull-down latch circuit performance is compromised during pull-up operation since weak PFETs are employed to pull up latch nodes. A pull up assist circuit is incorporated to assist weak PFET when latch node is being pulled up. The assist circuit is isolated from latch circuit when latch node is being pull down to guarantee that pull down circuit can overcome pull-up circuit (for correct latch operation).

Abstract: A tri-state sense amplifier is provided, which includes an enable input, a latch and an output driver. The latch has first and second complementary inputs and first and second complementary latch outputs, which are gated by the enable input. The output driver includes a data output, a pull-up transistor coupled to the data output and having a control terminal coupled to the first latch output, and a pull-down transistor coupled to the data output and having a control terminal coupled to the second latch output.

Abstract: An input circuit includes a data input unit for the input of input data, a data latch for latching the input data, a reset unit for resetting the data latch, a clock synchronization unit for synchronizing the input of the input data to the data input unit, and a latch enhancement unit for blocking feedthrough current by functioning complementarily to the reset unit, and enhancing the latching operation of the data latch.

Abstract: First and second differential transistor pairs, where each may be intentionally unbalanced or balanced, are provided. First and second variable current generators are coupled to control respective tail currents of the first and second differential pairs. A switch circuit is coupled to equalize the voltages of the respective tail current nodes. Applications of the amplifier circuit include sense amplifiers and comparators.

Abstract: A signal voltage detection circuit is provided to include a differential amplifier a differential amplifier having first and second driver transistors to which a reference voltage and a signal voltage to be detected are input respectively, a current mirror circuit configured to generate an output current corresponding to a detection output of the differential amplifier, a current-to-voltage conversion circuit configured to convert a change in the output current of the current mirror circuit into a voltage and for outputting the voltage converted, a latch circuit to which an output of the current-to-voltage conversion circuit is transferred and in which the output is held, and a capacitive load element connected to an input node of the current-to-voltage conversion circuit.

Abstract: A sense amplifier (40) uses a body shorting device (60) to selectively electrically short circuit the bodies of two transistors (44, 48) that function as a differential sensing pair. Equalization of charge injected into the bodies functions to minimize offset voltage between the two bodies. The body shorting device selectively shorts the bodies in response to a body control signal after a sense operation and after asserting a precharging signal to initiate precharging of the sense amplifier's outputs.

Abstract: The input buffer circuit includes an input stage providing a switching point voltage based on a predetermined switching point set between a first and second reference voltages that maximizes the high and low noise margins of the input buffer. The input buffer circuit further includes an output stage. The output stage is coupled to the input stage. The output stage receives the switching point voltage from the input stage and amplifies the switching point voltage to a full logic level voltage.

Abstract: A receiver performs on data to clock skew compensation by compensating ISI between signals, the ISI being caused by a bandwidth limitation generated in case of chip-to-chip communications in a digital system. A problem of an attenuation of a high frequency signal may occur due to an attenuation in a channel in case of a transmission of a signal at a high speed in the digital system. Therefore there is a limitation in transmitting data at a high speed. The receiver provides a circuit for applying an equalizing technology at the terminal of the receiver. And by compensating for the attenuation of a high frequency component of the signal by using the circuit, the transmission of a signal at a high speed is realized by over-sampling the signal and compensating the data to clock skew.

Abstract: Verniers are provided that substantially eliminate DC offset signals as they convert a differential input signal Sin to a differential output signal Sout with a conversion gain that corresponds to a digital command signal. The verniers are especially suited for use with multiplying digital-to-analog converters (MDACs) in communication systems. An exemplary use is forming line drivers to drive load impedances (e.g., coaxial cables).

Abstract: A 256 Meg dynamic random access memory is comprised of a plurality of cells organized into individual arrays, with the arrays being organized into 32 Meg array blocks, which are organized into 64 Meg quadrants. Sense amplifiers are positioned between adjacent rows in the individual arrays while row decoders are positioned between adjacent columns in the individual arrays. In certain of the gap cells, multiplexers are provided to transfer signals from I/O lines to data lines. A datapath is provided which, in addition to the foregoing, includes array I/O blocks, responsive to the datalines from each quadrant to output data to a data read mix, data buffers, and data driver pads. The write data path includes a data in buffer and data write muxes for providing data to the array I/O blocks. A power bus is provided which minimizes routing of externally supplied voltages, completely rings each of the array blocks, and provides gridded power distribution within each of the array blocks.

Abstract: To prevent a resistive delay in a bitline disconnecting circuit, an NMOS latch composing a part of a CMOS latch is composed of four series NMOS transistors, two of which have respective gate electrodes cross-coupled directly to a pair of bitlines without the interposition of the bitline disconnecting circuit therebetween and the other two of which have respective gate electrodes cross-coupled to a pair of first-stage output nodes in a stage subsequent to the bitline disconnecting circuit.

Abstract: To establish whether a precharged node remains isolated or alternatively is subject to discharge, the conventional circuit allows uncertainty. For a period after evaluation starts, the conventional circuit will give a tentative result that may subsequently turn out to be wrong. During evaluation power is dissipated. A differential offset dynamic comparator and timing circuit are used to evaluate whether the node is being discharged. Because the comparator has an offset, much smaller deviations from the precharge potential can be sensed: because it is dynamic, it does not consume steady state current. The timing circuit permits precise knowledge of when to look at the output: before the timing period has elapsed, the result is known to be invalid.

Abstract: A semiconductor integrated circuit including tow input nodes forming a pair; two output nodes configured to output amplification signals in accordance with a difference in signals inputted to the two input nodes; and at least one switching circuit for switching to a specific state in order to detect an input offset voltage of the semiconductor integrated circuit before a signal to be amplified is inputted to the input node; and the amplification signals are outputted for the two output nodes in a state that the input offset voltage of the semiconductor integrated circuit is corrected.

Abstract: A sense amplifier having three inputs determines the state of a memory bit cell by converting a bit input voltage, a high reference voltage, and a low reference voltage to respective current values. Current differences are formed between a bit current and a high reference current, and between a low reference current and a bit current. Current mirrors (154, 158 and 170, 166) and loads (160 and 168) are used in conjunction with current steering circuitry (150, 140, 142 and 162) to form the difference of the bit current and the high reference current and also form the difference of the low reference current and the bit current. Additionally, the sense amplifier drives differential outputs (OUT and OUT13B) to reflect the difference between the two current differential quantities.

Abstract: A sense amplifier in which its output nodes provide a full voltage swing between the supply and return nodes. The sense amplifier further includes a reset circuit to selectively equalize the first and second output nodes. An output of the sense amplifier is coupled to either a digital logic gate or a flip-flop to receive the full swing. Each field effect transistor (FET) of the input pair in the sense amplifier is either zero body biased or forward body biased, so that a bulk-source junction of each FET is either zero biased or forward biased.

Abstract: A compensation circuit for transistor threshold voltages in integrated circuits is described. The compensation circuit includes a transistor, current source, and gate reference voltage supply. The transistor is biased to provide a well bias voltage, or backgate voltage VBG, which is coupled to transistors provided on a common integrated circuit. This compensation circuit eliminates the need for gate biasing capacitors, and provides flexibility in setting threshold voltages in low voltage circuits. The gate reference voltage and current source are established to provide a desired backgate voltage VBG. Compensation circuits are described for both n-channel and p-channel transistors. A memory device is described which includes compensation circuits for controlling threshold voltages of transistors provided therein.

Abstract: In order to enhance the sensitivity of a sense amplifier circuit, each one of the transistor pair composing the sense amplifier circuit is formed by transistors connected parallel in an even number of stages, and therefore the sense amplifier circuit is made of transistor pair having an extremely balanced characteristic, cancelling the asymmetricity of current-voltage characteristic of the transistor pair to null.