Abstract: A ladder filter includes at least one series resonator connected in series between an input terminal and an output terminal, at least one parallel resonator connected in parallel with the at least one series resonator, an additional resonator connected in series between the at least one series resonator and one of the input terminal and the output terminal, and an inductor connected in series to the additional resonator, the additional resonator having a resonance frequency higher than an anti-resonance frequency of the at least one series resonator.

Abstract: A ladder-type-like filter circuit is specified with improved filter behavior. Inductive elements that interconnect parallel resonators with ground are electromagnetically coupled to one another.

Abstract: A method of making a resonating beam accelerometer (RBA). In an example process, a proof mass device and resonators are created from a quartz material. A direct bond is formed between the proof mass and the resonators by applying a predefined amount of pressure at a predefined temperature for a predefined amount of time. One or more damping plates are created from a quartz material. A direct bond is formed between the damping plates and the proof mass device. The proof mass device is created by applying a predefined amount of pressure at pressure at temperature to two bases, two proof mass portions, and a flexure. The proof mass bases are on opposite sides of the flexure. The proof mass portions are on opposite sides of the flexure. A gap is present between the proof mass bases and the proof mass portions.

Abstract: An acoustic wave device has a substrate and adjacent IDT electrodes. One IDT electrode has a signal connecting bus bar at one side in a direction orthogonal to a propagation direction and is connected to a signal line. A ground bus bar is grounded and located at the other side in the orthogonal direction. The other IDT electrode has a signal connecting bus bar which is located at the other side in the orthogonal direction and is connected to a signal line. A ground bus bar is grounded and located at the one side in the orthogonal direction. The acoustic wave device further has a floating member on the substrate, which is located at a space between the ground bus bar of the IDT electrode and the signal connecting bus bar of the IDT electrode and is not connected to the ground bus bar nor the signal connecting bus bar.

Abstract: An acoustic wave device includes: a support substrate composed of lithium tantalate in multi-polarization condition; an element substrate that is provided on an upper face of the support substrate and is composed of lithium tantalate, a lower face of the element substrate being jointed to the upper face of the support substrate; and a comb-like electrode that is provided on an upper face of the element substrate and excites an acoustic wave.

Abstract: A method for manufacturing piezoelectric resonator devices according to the present invention includes the following steps: a wafer forming step of preparing a thick-walled wafer 30 integrally formed with multiple lower lid members 3; a bonding step of bonding crystal resonator plates 2 to one main surface 31 of the wafer 30 via a bonding material 5 and bonding upper lid members 4 on the crystal resonator plates via a bonding material 5; a thinning step of thinning the wafer 30 from the other main surface 37 of the wafer; an external terminal forming step of forming external terminals on the other main surface of the thinned wafer; and a dividing step of cutting the wafer between each adjacent pair of crystal resonators so that multiple crystal resonators are obtained.

Abstract: An antenna duplexer includes a transmission filter which operates in a transmission frequency band and has a transmission filter output. A reception filter operates in a reception frequency band and has a reception filter output. An antenna connection is connected to the transmission filter output and a matching element is connected between the antenna connection and the reception filter input. The circuit formed from the transmission filter, reception filter and matching element attenuates transmission signals in a frequency band whose frequencies f are in the interval 0.50*f0<=f<=0.75*f0, where f0 is the mid-frequency of the reception frequency band.

Abstract: A micro-electro-mechanical transducer (such as a cMUT) having a non-flat surface is disclosed. The non-flat surface may include a variable curve or slope in an area where a spring layer contacts a support, thus making a variable spring model as the spring layer vibrates. The non-flat surface may be that of a non-flat electrode optimized to compensate the dynamic deformation of the other electrode during operation and thus enhance the uniformity of the dynamic electrode gap during operation. Methods for fabricating the micro-electro-mechanical transducer are also disclosed. The methods may be used in both conventional membrane-based cMUTs and cMUTs having embedded springs transporting a rigid top plate.

Abstract: An acoustic wave device comprises a substrate and an acoustic wave element on one main surface of the substrate. Side surfaces of the substrate comprises a protruding portion which protrudes out at a side of an another main surface closer than a side with the one main surface side.

Abstract: A new type of very broad bandwidth filters with small insertion loss and high return loss are given. The new filter uses a substrate that can propagate a PSAW and fan shaped transducers of low metallisation height, high metallisation ratio, low reflectivity and high coupling coefficient.

Abstract: A surface acoustic wave resonator includes: an IDT which is disposed on a quartz substrate with Euler angles of (?1°???1°, 117°???142°, 42.79°?|?|?49.57°), which is made of Al or alloy including Al as a main component and which excites a surface acoustic wave in an upper mode of a stop band; and an inter-electrode-finger groove which is formed by recessing the quartz substrate between electrode fingers which form the IDT. Here, the following expression is satisfied: 0.01??G??(1), where ? represents a wavelength of the surface acoustic wave and G represents a depth of the inter-electrode-finger groove. The depth G of the inter-electrode-finger groove and a line occupancy ? of the IDT satisfy the following expression: - 2.5 × G ? + 0.675 ? ? ? - 2.5 × G ? + 0.775 ( 5 ) and a number of pairs N of the electrode fingers in the IDT is in the range of the following expression: 160?N?220??(19).

Abstract: Embodiments of apparatuses, systems and methods relating to temperature compensation of acoustic resonators in the electrical domain are disclosed. Other embodiments may be described and claimed.

Abstract: A circuit substrate includes: a laminate substrate in which a conductive layer and an insulating layer are laminated; a filter chip that has an acoustic wave filter and is provided inside of the laminate substrate; and a chip component that is provided on a surface of the laminate substrate and is connected to the filter chip, at least a part of the chip component overlapping with a projected region that is a region of the filter chip projected in a thickness direction of the laminate substrate.

Abstract: A filter device including an input electronic circuit having an input load admittance Yin, an output electronic circuit having an output load admittance Yout, a lattice filter with two types of two piezoelectric resonators having a characteristic impedance Zc; those of the first type have a resonant frequency Fr1 and an antiresonant frequency Fa1; those of the second type have a resonant frequency Fr2 different from Fr1 and an antiresonant frequency Fa2 different from Fa1. The input and output impedances are matched to the reciprocal of the real part Re{Yin} of the admittance Yin and the reciprocal of the real part Re{Yout} of the admittance Yout, which are at least two to five times greater than the characteristic impedance Zc of the resonators. The frequency differences Fa1?Fr1 and Fa2?Fr2 are at least two to three times greater than the absolute value of the difference Fr1?Fr2.

Abstract: A duplexer includes: an insulation substrate having an upper surface on which a transmission filter and a reception filter are mounted, and a lower surface on which a foot pad layer electrically connected to the transmission filter and the reception filter is formed; a transmission pad provided on the upper surface and electrically connected to the transmission filter; a reception pad provided on the upper surface and electrically connected to the reception filter, a ring-shaped electrode provided on the upper surface and configured to surround the transmission pad and the reception pad; a ground foot pad included in the foot pad layer, and a via interconnection configured to electrically interconnect the ring-shaped electrode and the ground foot pad and to be provided in the ring-shaped electrode in a section along a shorter one of routes that connect the transmission pad and the reception pad to each other along the ring-shaped electrode.

Abstract: A power device comprises an output port and at least one first acoustic pathway and one second acoustic pathway, each acoustic pathway comprising at least one first input acoustic wave transducer connected to an input port, and an output acoustic wave transducer connected to the output port. Each acoustic pathway further comprises a floating acoustic wave transducer connected to a floating port; the input transducer and the output transducer being separated by a distance equal to (2m+1)?/4 with m an integer and ? the propagation wavelength; the input transducer and the floating transducer being separated by a distance equal to (2n+1) ?/2 with n an integer; each output transducer being connected to the output port, said power device being a combiner.

Abstract: A surface acoustic wave device comprises a piezoelectric substrate (1), at least one inter-digital transducers (IDT) (2) provided on the piezoelectric substrate, at least one elongated electrode pad (4) electrically connected to the IDT, and at least one stud bump (5) disposed on the electrode pad such that an LC component of the surface acoustic wave device has a predetermined value.

Abstract: Inertial sensor having a body with first and second cavities on opposite sides thereof, a sensing element in the first cavity, electronic circuitry in the second cavity, electrical conductors interconnecting the sensing element and the circuitry, and leads connected electrically to the circuitry and extending from the body for mounting the sensor and making connections with the circuitry.

Abstract: In a filter module having excellent phase balance characteristics, a length of a signal path between a first balanced mount electrode and a first balanced terminal electrode is different from a length of a signal path between a second balanced mount electrode and a second balanced terminal electrode. When viewing a mount board from a side on which a filter component is mounted, an area along which the first balanced mount electrode and a first internal ground electrode oppose each other is different from an area along which the second balanced mount electrode and the first internal ground electrode oppose each other.

Abstract: A method of fabricating a multi-band filter module is provided. The method includes forming a Film Bulk Acoustic Resonator (FBAR) on a piezoelectric substrate by forming a resonant part on the piezoelectric substrate and then an air gap recessed on a surface of the piezoelectric substrate and positioned under the resonant part; and forming a Surface Acoustic Wave (SAW) device on the piezoelectric substrate in which the steps of forming the FBAR and the SAW are concurrently performed.

Abstract: The filter includes one or more series resonators and one or more parallel resonators. An inductance is connected in series to at least a parallel resonator of the parallel resonators, and a antiresonance frequency of the parallel resonator to which the inductance is connected in series is equal to or higher than that of the series resonators. The duplexer, the communication module and the communication device are provided with the filter.

Abstract: Methods for the design of microwave filters comprises comprising preferably the steps of inputting a first set of filter requirements, inputting a selection of circuit element types, inputting a selection of lossless circuit response variables, calculating normalized circuit element values based on the input parameters, and generate a first circuit, insert parasitic effects to the normalized circuit element values of the first circuit, and output at least the first circuit including the post-parasitic effect circuit values. Additional optional steps include: requirements to a normalized design space, performing an equivalent circuit transformation, unmapping the circuit to a real design space, performing a survey, and element removal optimization. Computer implement software, systems, and microwave filters designed in accordance with the method are included.

Abstract: A SAW filter includes at least four electrically interconnected DMS tracks. First and second tracks of the at least four DMS tracks are connected in parallel in opposite directions to form a first filter element. The first and second tracks have two resonant frequencies that are offset from one another from track to track within the first filter element such that they define a common passband by virtue of a lower-frequency resonance of the first track being in phase at the same frequency as a higher-frequency resonance of the second track. Third and fourth tracks of the at least four DMS tracks can be connected in a similar fashion to form a second filter element. The passbands of the first and second filter elements are offset from one another and each comprise one of two channels of a two-channel filter.

Abstract: A method and system for providing a surface acoustic wave band reject filter are disclosed. According to one aspect, a surface acoustic wave band reject filter includes a substrate having electrode bars and bonding pads formed on the substrate. The filter further includes at least one die having a side facing the substrate. A plurality of surface acoustic wave resonators are formed on the at least one die formed on the substrate. Solder balls formed on a side of the at least one die facing the substrate are positioned to engage bonding pads on the substrate. The plurality of surface acoustic wave resonators collectively exhibit a band reject filter response.

Abstract: A surface acoustic wave filter and a duplexer are provided. In a surface acoustic wave filter, on a piezoelectric substrate, a first IDT electrode composed of an input/output electrode and a first floating electrode, and a second IDT electrode composed of a ground electrode and a second floating electrode are arranged, and are connected in series to each other via the first floating electrode and the second floating electrode to form IDTs. In two serial IDTs arranged next to each other, an electrode finger of the input/output electrode in the first IDT electrode of one serial IDT is arranged next to an electrode finger of the ground electrode in the second IDT electrode of the other serial IDT.

Abstract: A branching filter includes a ladder-type elastic wave filter unit connected between an antenna terminal and a transmission signal terminal and a longitudinally coupled resonator-type elastic wave filter unit connected between an antenna terminal and first and second balanced reception signal terminals while maintaining the isolation characteristics between the transmission signal terminal and the first and second reception signal terminals. In a duplexer, a transmission signal propagation direction is perpendicular or substantially perpendicular to each of a first reception signal propagation direction and a second reception signal propagation direction.

Abstract: The present application describes a radio frequency band reject filter including an input port, an output port, a plurality of acoustic resonators and an inductor for matching the impedance of the plurality of acoustic resonators. The inductor is positioned within the band reject filter in respect of the plurality of acoustic resonators such that a static capacitance between the input port and the inductor is substantially equivalent to a static capacitance between the output port and the inductor. The plurality of acoustic resonators may be a plurality of parallel resonators, a plurality of series resonators or a combination of series and parallel resonators. The radio frequency band reject filter is fabricated using any of surface acoustic wave (SAW) technology, thin film bulk acoustic resonator (FBAR) technology, and bulk acoustic wave (BAW) technology.

Abstract: An inexpensive compact band rejection filter realizes a high sharpness of a filter characteristic at ends of passbands and has a large attenuation. In the band rejection filter, at least one of a plurality of elastic wave resonators, which contributes to formation of a transition band, has a propagation angle larger than those of the other elastic wave resonators. Accordingly, the at least one of the plurality of elastic wave resonators which contributes to the formation of the transition band has an electromechanical coupling coefficient that is smaller than electromechanical coupling coefficients of the other elastic wave resonators.

Abstract: A method for producing an electric component including a dielectric layer on a substrate, includes the method steps of applying a metallic layer to the substrate and oxidizing the metallic layer to form a dielectric layer, wherein at least one partial region of the metallic layer is fully oxidized through the entire thickness of the layer.

Abstract: A method and system for an acoustic wave band reject filter are disclosed. According to one aspect, an acoustic wave band reject filter includes a substrate and a plurality of acoustic wave band reject filter blocks. The substrate includes bonding pads formed on the substrate. Each one of the plurality of acoustic wave band reject filter blocks is fixed on a separate die. Each separate die has solder balls on a side of the die facing the substrate. The solder balls are positioned to electrically connect the bonding pads formed on the substrate to positions on each of the die.

Abstract: A method and system for an acoustic wave band reject filter are disclosed. According to one aspect, an acoustic wave band reject filter includes a substrate and a plurality of acoustic wave band reject filter circuit blocks. The substrate includes bonding pads formed on the substrate. Each one of the plurality of acoustic wave band reject filter circuit blocks is fixed on a separate die. Each separate die has solder balls on a side of the die facing the substrate.

Abstract: A parylene C polymer that is electrically poled such that it is piezoelectric is presented. Methods for manufacturing the piezoelectric parylene C polymer with an optimal piezoelectric coefficient d33 are also disclosed. Actuators formed with piezoelectric parylene C are disclosed as well as sensor devices that incorporate piezoelectric parylene C using charge integrator circuits in which the integration time is longer than likely adiabatic temperature transients.

Abstract: An elastic wave filter device having improved sharpness of filter characteristics includes a longitudinally-coupled resonator-type elastic wave filter section including first to third IDT electrodes each including a plurality of electrode fingers, and first and second reflectors. The first to third IDT electrodes include narrower-pitch portions provided in end portions thereof, which are each adjacent to another IDT electrode in a direction of propagation of elastic waves, each of the narrower-pitch portions having a smaller period of electrode fingers than a period of electrode fingers in the remaining portion of the relevant IDT electrode. The number of electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on the side closer to the first IDT electrode, and the number of electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on the side closer to the third IDT electrode, differ from each other.

Abstract: An electronic component includes: an element that is located on a substrate; a signal wiring that is located on the substrate and electrically connected to the element; a metal plate that is located so as to form a cavity on a functional part of the element and covers an upper surface of the cavity; a support post that is located on the substrate so as not to be located on the signal wiring, and supports the metal plate; and an insulating portion that covers the metal plate and the support post, and contacts a side surface of the cavity.

Abstract: A piezoelectric component includes a piezoelectric element that includes: a piezoelectric plate; a comb-shaped electrode and an input/output electrode on a principal surface of the piezoelectric plate; a cover layer disposed above the comb-shaped electrode; and a rib to form a void between the comb-shaped electrode and the cover layer. The cover layer includes a photosensitive thermosetting resin in which translucent filler is contained.

Abstract: In an elastic wave device, a first piezoelectric substrate and a second piezoelectric substrate are joined to each other with a joining portion so as to face each other across a cavity. A first set of a plurality of filters located on a facing surface of the first piezoelectric substrate and a second set of a plurality of filters located on a facing surface of the second piezoelectric substrate define a plurality of pairs of filters and face each other across the cavity. An absolute value of a difference between center frequencies of a filter of the first set of filters and a filter of the second set of filters in each pair of filters is larger than a minimum value among absolute values of differences between center frequencies of pairs of filters selected from a group including the first set of filters and the second set of filters.

Abstract: Disclosed herein is a surface acoustic wave (SAW) filter and method of making the same. The SAW filter includes a piezoelectric substrate; a planar barrier layer disposed above the piezoelectric substrate, and at least one conductor buried in the piezoelectric substrate and the planar barrier layer.

Abstract: A method of producing an acoustic wave device includes: forming an interdigital electrode on a piezoelectric substrate; forming a barrier film so as to cover the interdigital electrode; forming a medium on the barrier film; measuring a frequency characteristic of an acoustic wave excited by the interdigital electrode; and forming, in an excitation region, an adjustment region having a thickness different from other portions by patterning the barrier film or further providing an adjustment film. When forming the adjustment region, an area T of the adjusting area is adjusted in accordance with the measured frequency characteristic.

Abstract: An elastic wave device that suppresses high-frequency spurious components caused by unwanted waves, such as bulk waves, and improves filter characteristics, includes a piezoelectric substrate, an electrode structure including an IDT electrode provided on the substrate, a first wiring portion that is electrically connected to the IDT electrode, and a second wiring portion provided on a first insulating film that includes a through-hole partially exposing the first wiring portion therethrough. The second wiring portion extends into the through-hole and is electrically connected to the first wiring portion. The second wiring portion is arranged over an area other than the area in which the IDT electrode is disposed.

Abstract: An electronic component module includes: a multi-layered wiring board formed by stacking insulating layers, an inner wiring layer formed between the insulating layers, and a surface wiring layer formed on an outermost insulating layer of the insulating layers; and an acoustic wave device located inside the multi-layered wiring board, wherein the acoustic wave device includes a functional element and a sealing portion, the functional element being located on a substrate and exciting an acoustic wave, and the sealing portion sealing the functional element so as to form an air-space above the functional element, and a terminal portion of the surface wiring layer does not overlap the air-space of the acoustic wave device as viewed from a stacking direction of the multi-layered wiring board, the terminal portion being a region to which a terminal of an electronic component is fixed in the surface wiring layer.

Abstract: An acoustic wave filter includes: multimode filters, each including an IDT, connected in parallel; a ceiling that is commonly located above at least two multimode filters of the multimode filters so as to form a cavity between the IDT and the ceiling, electrically connected to the multimode filters, and formed of a metal; and at least two terminals that are electrically connected to the ceiling and located above the at least two multimode filters.

Abstract: An elastic wave device includes a piezoelectric substrate, an IDT electrode located on the piezoelectric substrate, and a capacitive electrode that is located on the piezoelectric substrate and is connected in series with the IDT electrode. The capacitive electrode includes a plurality of capacitive electrode portions, each of which includes a pair of mutually interdigitated comb-shaped electrodes. The plurality of capacitive electrode portions are connected with each other in parallel. The plurality of capacitive electrode portions are arranged such that an intersecting width direction D1 of the capacitive electrode portions is inclined with respect to an intersecting width direction D2 of the IDT electrode. The plurality of capacitive electrode portions are arrayed in an elastic-wave propagating direction D3 of the IDT electrode.

Abstract: System and method for enabling the cohabitation of licensed and unlicensed communications devices. A method comprises at a receiver, receiving transmitted data, demodulating the transmitted data to produce spread symbols, despreading the spread symbols to produce received data, wherein the despreading comprises using an orthogonal sequence selected from a list of orthogonal sequences for use by all transmissions in the wireless network, and processing the received data.

Abstract: A surface acoustic wave device includes first interconnections and second interconnections connected to a potential different from a potential connected to the first interconnections that are arranged on a piezoelectric substrate. The first interconnections three-dimensionally intersect with the second interconnections with insulating layers made of a thermosetting resin, disposed therebetween. Interdigital electrodes defining IDTs are films which have six-fold rotational symmetric spots appearing in an XRD pole figure and which are defined by Al films or Al—Cu alloy films containing Cu in an amount not greater than the solubility limit at about 25° C.

Abstract: A guided acoustic wave resonant device is provided. The device comprises at least two filters (F1, . . . , Fi, . . . , FN), each filter comprising at least two acoustic wave resonators (R11-R12, . . . , Ri1-Ri2, . . . , RN1-RN2), each filter having a useful frequency band (BF1, . . . , BFi, . . . , BFN) centered on a central frequency (f1, . . . , fi, . . . , fN), each resonator comprising at least one suite of inter-digitated upper electrodes exhibiting a periodic structure of period (?ij) and a layer of piezoelectric material, each resonator having a coupling coefficient (k21, k22, . . . , k2n) and a resonant frequency (fr1, . . . , fr2, . . .

Abstract: A ladder-type filter having plural elastic-wave resonators provided on a series arm and a parallel arm in a ladder shape on a piezoelectric substrate. Each of the elastic-wave resonators has an interdigital electrode. The interdigital electrode has plural electrode finger pairs formed of electrode fingers extending from first and second bus bars. The interdigital electrode included in the elastic-wave resonator provided on the parallel arm has an electrode cross width of the electrode fingers extending from the first and second bus bars 23 times or more of the wavelength of elastic waves excited by the interdigital electrodes.

Abstract: A periodic signal generator is configured to generate high frequency signals characterized by relatively low temperature coefficients of frequency (TCF). This generator may include an oscillator containing a pair of equivalent MEMs resonators therein, which are configured to support bulk acoustic wave and surface wave modes of operation at different resonance frequencies. Each resonator includes a stack of layers including a semiconductor resonator body (e.g., Si-body), a piezoelectric layer (e.g., AIN layer) on the resonator body and interdigitated drive and sense electrodes on the piezoelectric layer. The oscillator is configured to support the generation of first and second periodic signals having unequal first and second frequencies (f1, f2) from first and second resonators within the pair. These first and second periodic signals are characterized by respective first and second temperature coefficients of frequency (TCf1, TCf2), which may differ by at least about 10 ppm/° C.

Abstract: A method of manufacturing a boundary acoustic wave device includes the steps of forming an electrode on a first medium layer, forming a second medium layer so as to cover the electrode on the first medium layer, and forming a sound absorbing layer on an external surface of the second medium layer. The sound absorbing layer has an acoustic velocity of transverse waves that is lower than an acoustic velocity of transverse waves of the second medium layer.

Abstract: A surface acoustic wave device includes: a sapphire substrate having a C-plane main surface; comb-like electrodes which excite surface acoustic waves formed on the main surface of the sapphire substrate; an aluminum nitride film which covers the comb-like electrodes and the main surface; and a silicon dioxide film which is formed on the surface of the aluminum nitride film.

Abstract: A surface acoustic wave device includes a piezoelectric substrate having a first surface on which comb-like electrodes, first pads connected thereto, and a first film are provided. The first film is located so as to surround the comb-like electrodes. A base substrate has a second surface on which second pads joined to the first pads and a second film joined to the first film are provided. The first and second films joined by a surface activation process define a cavity in which the comb-like electrodes and the first and second pads are hermetically sealed.