Abstract: A method for manufacturing an acoustic wave device includes: forming reforming regions in a substrate along a first direction and a second direction intersecting the first direction by irradiating the substrate with a laser beam under different conditions in the first direction and the second direction, the substrate including a piezoelectric substrate on which an IDT (InterDigital Transducer) is formed, and linear expansion coefficients of the piezoelectric substrate being different in the first direction and the second direction; and cutting the substrate in the first direction and the second direction at the reforming regions.

Abstract: An elastic wave apparatus includes a piezoelectric substrate, an IDT electrode on the piezoelectric substrate and includes first electrode fingers, second electrode fingers, a first busbar, and a second busbar, a capacitive electrode including third electrode fingers, fourth electrode fingers, a third busbar, and a fourth busbar, an insulating film laminated on the capacitive electrode, a first wiring line including a first portion facing the capacitive electrode via the insulating film, and a second wiring line that connects the first busbar and the third busbar. The capacitive electrode extends in a lateral direction with respect to the IDT electrode in a surface acoustic wave propagation direction.

Abstract: The present invention relates to methods for suppressing spurious modes in microresonators. In particular embodiments, such spurious modes can be reduced by providing one or more structural components that effectively reduce the acoustic velocity in the transducer domain. Additional methods and microresonators are described herein.

Abstract: A tubular resonant filter comprises a multilayer sheet in a rolled configuration comprising multiple turns about a longitudinal axis, where the multilayer sheet includes a strain-relieved layer, a patterned first conductive layer on the strain-relieved layer, an insulating layer on the patterned first conductive layer, and a patterned second conductive layer on the insulating layer and the patterned first conductive layer. The patterned first and second conductive layers and the insulating layer are interrelated to form a rolled-up inductor connected to a rolled-up capacitor on the strain-relieved layer.

Abstract: A duplexer includes a first band-pass filter and a second band-pass filter with a pass-band lower than the first band-pass filter. The first band-pass filter includes an unbalanced surface acoustic wave filter. First, second and third signal wire electrodes and a ground wire electrode are provided on a piezoelectric substrate in the first band-pass filter, and a bridging area is provided where any one of the first, second and third signal wire electrodes bridges the ground wire electrode. A width of a portion of the signal wire electrode that opposes the ground wire electrode with an interlayer insulating film located therebetween is greater than a width of a portion of the signal wire electrode other than the bridging area so that a low-pass filter capacitor is provided.

Abstract: An electroacoustic component includes a substrate configured to carry acoustic waves. The electroacoustic component can be a guided bulk acoustic wave (GBAW) device, for example. A structured electric conductive layer is arranged on the substrate and an electrically dielectric layer (for example, aluminum oxide) is also arranged over the substrate.

Abstract: An electronic component element includes a piezoelectric substrate and a comb-shaped electrode located on one principal surface of the piezoelectric substrate. A support layer is arranged around the comb-shaped electrode. A cover layer is disposed so as to cover the support layer and the comb-shaped electrode. Via-hole electrodes extend through the cover layer and are connected to the comb-shaped electrode. An uneven portion is located on a principal surface of the cover layer that is opposite to a principal surface of the cover layer that is opposed to the comb-shaped electrode.

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.

Abstract: A surface acoustic wave filter device includes surface acoustic wave filters, one of which includes a longitudinally coupled resonator-type first filter section and a longitudinally coupled resonator-type second filter section. The second filter section is electrically connected in parallel or series with the first filter section on at least one of an input signal side and an output signal side. The first filter section includes a first IDT group including three IDTs. The second filter section includes a second IDT group including three IDTs. Another surface acoustic wave filter includes a third IDT group that is cascade connected to the first filter section and the second filter section and includes IDTs arranged in order in a line in a surface acoustic wave propagation direction.

Abstract: A variable-frequency resonance circuit includes first and second input/output terminals and a resonance circuit portion. The resonance circuit portion includes a first inductor and first and second LC series circuits. The resonance circuit portion is connected between a ground and a transmission line that connects the first and second input/output terminals. The first LC series circuit includes a second inductor and a variable capacitor connected in series with each other. The second LC series circuit includes a third inductor and a fixed capacitor connected in series with each other. The first and second LC series circuits are connected in parallel between the first inductor and a ground. The first and second inductors are configured such that positive-coupling mutual inductance is produced therebetween.

Abstract: An acoustic wave device includes: a substrate; an acoustic wave element that is formed on the substrate; a first wiring that is formed on the substrate and electrically connected to the acoustic wave element; a second wiring that is formed above the substrate via an air gap, and includes an edge fixed to the first wiring; a fixer that is formed on an edge of the first wiring, projects upwardly, and is fixed to the second wiring; and a projection that contacts the fixer, projects upwardly, and is formed on the edge of the first wiring and on an outside of the second wiring in a direction intersecting an extension direction of the second wiring.

Abstract: Balun with tunable bandpass filter characteristic includes first, second and third coupling elements disposed on a substrate. The first and second coupling elements are arranged on the substrate relative to the third coupling element to couple two identical but out of phase signals to form a corresponding unbalanced signal in the third coupling element. A plurality of tunable resonator elements are distributed within an area of the substrate defined on one side by the first and second coupling elements and on an opposing side by the third coupling element. The tunable resonator elements are configured to selectively produce a bandpass filter response.

Abstract: Systems and methods are disclosed that reduce or eliminate interference from non-target sensors in a wireless network. In some embodiments, the sensors contain a blocking device, such as a diode or a transistor, connected between the antenna and the transducer that blocks the cross-correlation response from being transmitted from non-target sensors while permitting an autocorrelation response from a target sensor to be transmitted.

Abstract: An acoustic wave device comprises a substrate and an acoustic wave element on one main surface of the substrate. Side surfaces of the substrate comprises a protruding portion which protrudes out at a side of an another main surface closer than a side with the one main surface side.

Abstract: In a method for manufacturing a piezoelectric device, a silicon oxide film is deposited by sputtering on a surface of a single-crystal piezoelectric substrate closer to an ion-implanted region, and a silicon nitride film is deposited by sputtering on a surface of the dielectric film opposite to a side thereof closer to the single-crystal piezoelectric substrate. The silicon oxide film has a composition that is deficient in oxygen relative to the stoichiometric composition. Accordingly, little oxygen is supplied from the silicon oxide film to the piezoelectric thin film during heat treatment of a piezoelectric device. This prevents oxidation of the piezoelectric thin film and therefore formation of an oxide layer with high resistivity in the piezoelectric thin film. As a result, a pyroelectric charge generated in the piezoelectric thin film can flow to the silicon oxide film.

Abstract: An acoustic wave element includes a piezoelectric substrate, an excitation electrode configured to excite and output a main acoustic wave on the piezoelectric substrate, a receiving electrode configured to receive the main acoustic wave, a propagation path configured to allow the main acoustic wave to propagate along the piezoelectric substrate between the excitation electrode and the receiving electrode, and a sensing portion configured to react to an object substance. The propagation path is configured to allow the main acoustic wave to pass plural times through the sensing portion along the propagation path. This acoustic wave element has high sensitivity to the object substance.

Abstract: An acoustic wave device includes a first longitudinally-coupled acoustic wave filter having interdigital transducer (“IDT”) electrodes arranged in a propagation direction of acoustic wave, and a second longitudinally-coupled acoustic wave filter having IDT electrodes arranged in a propagation direction of acoustic wave. In the IDT electrodes of the first longitudinally-coupled acoustic wave filter, a comb-shaped electrode connected to an input port and another comb-shaped electrode connected to an output port are disposed in an in-phase relation. In the IDT electrodes of the second longitudinally-coupled acoustic wave filter, a comb-shaped electrode connected to an input port and another comb-shaped electrode connected to an output port are disposed in an anti-phase relation. This acoustic wave device has an excellent attenuation characteristic while maintaining a preferable insertion loss.

Abstract: In a filter, two parallel resonators that are adjacent to each other are connected, in parallel, to a first portion of the signal line that connects a pair of two adjacent series resonators, at least one parallel resonator is connected, in parallel, to a second portion of the signal line that connects a different pair of two adjacent series resonators, a first inductor is connected to one parallel resonator of said two parallel resonators in series, a second inductor is connected to one parallel resonator of said at least one parallel resonator in series, a third inductor is connected to said two parallel resonators and said at least one parallel resonator, the first and third inductors' total inductance is different from the second and third inductor's total inductance.

Abstract: An acoustic microwave filter comprises an input and an output, and a plurality of acoustic resonators coupled between the input and the output. The difference between the lowest resonant frequency and the highest resonant frequency of a plurality of resonators in the filter is at least 1.25 times the frequency separation of the resonator with the highest resonant frequency in the plurality of resonators. Another acoustic microwave filter comprises an input and an output, and a plurality of acoustic resonators coupled between the input and the output to form a passband. The frequency difference between a local minimum or a local maximum of a return loss magnitude of the acoustic microwave filter and the edge of the passband is at least once the frequency separation of the resonator with the highest resonant frequency.

Abstract: An antenna duplexer includes first and second filters connected to an antenna terminal. The first filter has a passband of a low frequency band. The second filter has a passband of a high frequency band. The second filter is a ladder-type filter including series-arm resonators and parallel-arm resonators. At least one parallel-arm resonator out of the parallel-arm resonators has a main resonance and an auxiliary resonance. Attenuation poles caused by the main resonance and the auxiliary resonance are within the low frequency band. This antenna duplexer has a high attenuation characteristic and a high isolation characteristic while maintaining a low insertion loss.

Abstract: A communication module includes a plurality of duplexers, wherein at least either IDT electrodes of transmit filters of at least two of the plurality of duplexers having a different transmit band or IDT electrodes of receive filters of at least two of the plurality of duplexers having a different receive band are composed of a same material, have a same thickness and are provided on a single piezoelectric substrate.

Abstract: A SAW device (1) has a substrate (3) configured to propagate acoustic waves; an IDT electrode (15) on a first main surface (3a) of a substrate (3); and an electrode pad (13) on the first main surface (3a) electrically connected to the IDT electrode (15). The SAW device (1) also has a terminal with a pillar-shape (column part (7z)) setted up on the electrode pad (13); a third conductive layer (39) extending from a side surface of the column part (7z); and a cover (5) forming a vibration space (S) above the IDT electrode (15) and covering the side surface of the column part (7z), and the third conductive layer (39).

Abstract: A duplexer includes a transmitting filter including serial resonators and parallel resonators connected in a ladder configuration, and a receiving filter. A resonator of the serial resonators and the parallel resonators in the transmitting filter that is arranged closest to a common terminal of the transmitting filter and the transmitting filter includes a surface acoustic wave resonator, and at least one resonator excluding the resonator that is arranged closest to the common terminal includes a film bulk acoustic wave resonator.

Abstract: The invention relates to a band rejection filter comprising a piezoelectric substrate and a serial connection of at least two pi-elements which are arranged on the substrate. The pi-elements respectively comprise at least two electro-acoustic parallel resonators and at least one electro-acoustic serial resonator, and are connected by a first series inductance. Said serial connection comprises, on a first inlet, a second series inductance and on an outlet, a third series inductance. Said resonators have a pole-zero plot of approximately 9% or more.

Abstract: There is provided a tapered elastic wave filter higher in impedance than a conventional filter where one input-side IDT electrode and one output-side IDT electrode are disposed. Filter parts which are the same in the structure of an input-side IDT electrode and in the structure of an output-side IDT electrode are disposed, and when the first filter part is disposed on a lower side and the second filter part is disposed on an upper side of the first filter part so that the input-side IDT electrodes are connected and the output-side IDT electrodes are connected, in cascade (in series) between a signal port and a ground port, an upper busbar in each of the IDT electrodes of the first filter part and a lower busbar in each of the IDT electrodes of the second filter part are electrically connected to each other.

Abstract: An elastic-wave filter device includes a reception filter section including a longitudinally coupled resonator-type elastic-wave filter section that has a balanced-to-unbalanced conversion function and has improved common-mode isolation characteristics. Among IDT electrodes of a filter section, each of the other comb-shaped electrode of a first IDT electrode including a pair of comb-shaped electrodes, one of which is connected to a first balanced-signal terminal, and the other comb-shaped electrode of a second IDT electrode including a pair of comb-shaped electrodes, one of which is connected to a second balanced-signal terminal, is connected to one of ground electrodes that are provided on a piezoelectric substrate. Inductors are provided on the piezoelectric substrate, and each inductor is connected between the other comb-shaped electrode of one of the first and second IDT electrodes and one of the ground electrodes.

Abstract: An electronic device has a vibrating element and a package accommodating the vibrating element. Moreover, the package has through-electrodes formed to penetrate a base substrate in its thickness direction and electrically connected with connection terminals, and electrically conductive adhesives (covering members) formed above the connection terminals so as to contain the through-electrodes.

Abstract: An acoustic wave device is provided with a low-frequency side filter having a low-frequency side passband, a high-frequency side filter having a high-frequency side passband, and first and second balanced terminals. The low-frequency side filter is connected to a first unbalanced terminal. The low-frequency side passband is a frequency band from a first minimum frequency to a first maximum frequency. The high-frequency side filter is connected to a second unbalanced terminal. The high-frequency side passband is a frequency band from a second minimum frequency to a second maximum frequency. The low-frequency side filter includes a first longitudinally-coupled acoustic wave resonator and a first one-terminal pair acoustic wave resonator connected in series to the first longitudinally-coupled acoustic wave resonator. An antiresonant frequency of the first one-terminal pair acoustic wave resonator is set to be higher than the first maximum frequency and lower than the second minimum frequency.

Abstract: An acoustic wave filter includes: at least a parallel resonator, wherein at least one of the parallel resonator includes a piezoelectric substance, an IDT located on the piezoelectric substance, and reflectors located on the piezoelectric substance so as to sandwich the IDT, and a distance between a first electrode finger that is an electrode finger closest to the reflector among electrode fingers of the IDT and a second electrode finger that is an electrode finger closest to the IDT among electrode fingers of the reflector is less than 0.25(?IDT+?ref) where a period of the electrode fingers of the IDT is ?IDT and a period of the electrode fingers of the reflector is ?ref.

Abstract: An acoustic wave filter includes: multimode filters, each including an IDT, connected in parallel; a ceiling that is commonly located above at least two multimode filters of the multimode filters so as to form a cavity between the IDT and the ceiling, electrically connected to the multimode filters, and formed of a metal; and at least two terminals that are electrically connected to the ceiling and located above the at least two multimode filters.

Abstract: A filter includes: first series resonators and first parallel resonators that are connected in a ladder shape between an input terminal and an output terminal; a first inductor that is connected in parallel to at least one first series resonator; one or more second parallel resonators that are provided separately from the first parallel resonators, are connected between the input terminal and the output terminal, and have a resonance frequency and an anti-resonance frequency at frequencies lower than a passband formed by the first series resonators and the first parallel resonators; wherein an attenuation region is formed by a first attenuation pole formed by the at least one first series resonator and the first inductor and a second attenuation pole formed by a resonant response of the one or more second parallel resonators.

Abstract: An RF filter comprises a signal transmission path having an input and an output, a plurality of resonant elements disposed along the signal transmission path between the input and the output, and a plurality of non-resonant elements coupling the resonant elements together to form a stop band having a plurality of transmission zeroes corresponding to respective frequencies of the resonant elements, and at least one sub-band between the transmission zeroes. The non-resonant elements comprise at least one variable non-resonant element for selectively introducing at least one reflection zero within the stop band to create a pass band in a selected one of the sub-band(s). The RF filter further comprises an electrical controller configured for receiving an operating temperature, and adjusting the variable non-resonant element(s) based on the received operating temperature, thereby selectively moving the reflection zero(es) along the stop band to move the pass band within the selected sub-band.

Abstract: The present invention is an acoustic wave device including first and second acoustic wave resonators. A first tilt angle that is an angle formed between a direction perpendicular to a direction in which electrode fingers of the first acoustic wave resonator extend and a direction along which the electrode fingers are arranged is different from a second tilt angle that is an angle formed between a direction perpendicular to a direction in which electrode fingers of the second acoustic wave resonator extend and a direction along which the electrode fingers are arranged.

Abstract: A filter includes a plurality of primary resonators connected to a serial arm, a plurality of secondary resonators connected to a parallel arm, a primary inductor connected to at least one of the plurality of primary resonators and a secondary inductor connected to at least one of the plurality of secondary resonators. The primary inductor is arranged so as not to be connected to a path between the secondary resonator to which the secondary inductor is connected in parallel and the primary resonator that is connected to the secondary resonator to which the secondary inductor is connected in parallel.

Abstract: An acoustic wave device comprising at least one surface acoustic wave filter and one bulk acoustic wave filter, the device including, on a substrate comprising a second piezoelectric material: a stack of layers including a first metal layer and a layer of a first monocrystalline piezoelectric material, wherein the stack of layers is partially etched so as to define a first area in which the first and second piezoelectric materials are present and a second area in which the first piezoelectric material is absent; a second metallization at the first area for defining the bulk acoustic wave filter integrating the first piezoelectric material, and a third metallization at the second area for defining the surface acoustic wave filter integrating the second piezoelectric material.

Abstract: Embodiments of the present disclosure include devices and methods for humidity and temperature sensing. For example, in one embodiment, a sensing device can include a first surface acoustic wave (SAW) component, wherein the first SAW component is a temperature component, a second SAW component, wherein the second SAW component is a humidity component, a third SAW component, wherein the third SAW component is a reference component, and a piezoelectric layer, wherein the first SAW component, the second SAW component, and the third SAW component are on a surface of the piezoelectric layer.

Abstract: An elastic-wave filter device includes a first piezoelectric substrate, a second piezoelectric substrate, a first pillar-like wiring electrode, and a second pillar-like wiring electrode. The first and second substrates have a first and a second IDT electrodes on their top faces respectively. A lateral face of the second substrate confronts a lateral face of the first substrate. The first pillar-like electrode and the second pillar-like electrode are formed above the first and the second substrates respectively, and are electrically connected to the first and the second IDT electrodes respectively. The first substrate is thicker than the second substrate. A distance between a plane including the top face of the first substrate and a plane including the top face of the second substrate is smaller than a distance between a plane including an underside of the first substrate and a plane including an underside of the second substrate.

Abstract: An elastic wave filter device includes a ladder filter unit, a first inductor, a second inductor, and a capacitor. The ladder filter unit includes at least three parallel arms including a first parallel arm. The first inductor is connected between the first parallel arm and a ground potential. The second inductor is connected between at least two of the parallel arms, other than the first parallel arm among the at least three parallel arms, and the ground potential. The capacitor is connected between a connection point of the first parallel arm and the first inductor and a connection point of the second inductor and the at least two parallel arms.

Abstract: An improved electronic module assembly and method of fabrication is disclosed. A patterned array of adhesive is deposited on a laminate, to which a chip is attached. Each region of adhesive is referred to as a lid tie. A lid is placed on the laminate, and is in contact with the lid ties. The lid ties serve to add stability to the laminate and reduce flexing during thermal processing and mechanical stress.

Abstract: An apparatus, comprises a piezoelectric layer, a first acoustic resonator comprising first and second electrodes formed on opposite sides of the piezoelectric layer, and a second acoustic resonator comprising first and second electrodes formed on opposite sides of the piezoelectric layer and acoustically coupled to the first acoustic resonator.

Abstract: Disclosed is a pass band type acoustic wave filter capable of obtaining an excellent attenuation characteristic in attenuation bands, in which an IDT electrode having a meander structure is used as at least one of the input-side electrode and the output-side electrode, and the attenuation band is provided over/under the pass band. An electrode having a meander structure in which a plurality of IDT blocks are connected to each other in series between the input port or the output port and the ground port is arranged as the input-side IDT electrode and the output-side IDT electrode, and the electrode finger between the neighboring IDT blocks is removed, so as to suppress excitation of an undesired acoustic wave.

Abstract: An elastic wave filter device includes a longitudinally coupled resonator-type elastic wave filter formed on a piezoelectric substrate; and a ladder-type elastic wave filter connected to the resonator-type elastic wave filter. The resonator-type filter includes an input IDT and an output IDT. The ladder-type filter includes a series arm resonator and a parallel arm resonator. A first ground electrode connected to the parallel arm resonator is electrically separated from a second ground electrode connected to at least one of the input IDT and the output IDT.

Abstract: An acoustic filter and method of acoustic filter manufacture provides a plurality of series acoustic resonators coupled in series on a first resonator substrate, a plurality of shunt resonators on a second resonator substrate, and a support substrate. The first and second resonator substrates are mounted on the support substrate. The filter further provides a plurality of electrical connections, wherein each respective electrical connection electrically couples a respective one of the plurality of shunt resonators to a respective one of the plurality of series acoustic resonators.

Abstract: A ladder filter includes at least one series resonator connected in series between an input terminal and an output terminal, at least one parallel resonator connected in parallel with the at least one series resonator, and an inductor connected in parallel with the at least one series resonator. The at least one series resonator and the inductor generate a first attenuation pole at a frequency equal to or lower than a frequency band defined by the at least one series resonator and the at least one parallel resonator. The first attenuation pole is located at a frequency that is equal to or higher than a resonance frequency of a parallel resonator that is included in the at least one parallel resonator and has a highest resonance frequency and that is equal to or lower than a high-frequency end of the pass band.

Abstract: Disclosed is a surface acoustic wave device which has IDT electrodes arranged over a lithium tantalate piezoelectric substrate and is capable of suppressing propagation losses even at a high frequency band equal to or higher than 2 GHz as low as possible in order to utilize surface acoustic waves including LSAW. For this purpose, 45° to 46° rotated YX-cut lithium tantalate substrate is used as the piezoelectric substrate, a thickness of the IDT electrode is set to 7.5% ? to 8% ?, and a metallization ratio in electrode fingers of the IDT electrode is set to 0.55 to 0.65.

Abstract: An acoustic wave filter has a first signal line connecting one among the plurality of first IDT electrodes and the first balanced signal terminal; a second signal line connecting the other first IDT electrode with the second balanced signal terminal; a third signal line connecting one among the plurality of second IDT electrodes with the second balanced signal terminal; and a fourth signal line connecting the other second IDT electrode with the first balanced signal terminal. The fourth signal line has an intersection portion three-dimensionally intersecting with a part of the second signal line. The intersection portion extends in a direction inclined relative to the second signal line on the major surface.

Abstract: Surface acoustic wave resonators for use in high temperature applications including a piezoelectric substrate, at least one interdigital transducer supported by the piezoelectric substrate, and a grating reflector supported by the piezoelectric substrate, the grating reflector being fabricated of a heavy metal and comprising a plurality of electrodes, at least one electrode of the plurality of electrodes being electrically isolated from at least one other electrode. Methods of making surface acoustic wave resonators are also included.

Abstract: An SAW filter and a duplexer excellent in electrical characteristics will be provided. An SAW filter has a piezoelectric substrate 40, a surface acoustic wave element 10 having a first IDT electrode 1 on the piezoelectric substrate 40, a first signal line 31 electrically connected to the first IDT electrode 1, and a ring-shaped reference potential line 9 which has a first intersecting portion intersecting with the first signal line 31 through an insulation member 41 and surrounds the surface acoustic wave element 10.

Abstract: An object of the present invention is to improve the passing characteristic at high temperature in a ladder-type elastic wave filter and a duplexer including the filter. The ladder-type elastic wave filter of the present invention includes a piezoelectric substrate, a first series elastic-wave resonator formed on the piezoelectric substrate and connected in series between the input and output terminals of the filter, a parallel elastic-wave resonator formed on the piezoelectric substrate and connected in parallel between the series elastic-wave resonator and the ground terminal, and a dielectric film formed on the piezoelectric substrate so as to cover the first series elastic-wave resonator. The piezoelectric substrate is formed of a material with a negative temperature coefficient.

Abstract: An acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode provided on an upper surface of the piezoelectric substrate, a first dielectric film covering the upper surface of the piezoelectric substrate to cover the IDT electrode, and a second dielectric film covering an upper surface of the first dielectric film. The second dielectric film includes a thin portion positioned in a tip region of electrode fingers of the IDT electrode and a thick portion which is positioned in a middle region of the IDT electrode and is thicker than the thin portion. The acoustic wave device suppresses spurious emission and has superior passband characteristics.