Abstract: Even when frequency characteristics are changed in association with multiple communication bands, an attenuation required for a specific frequency band outside a pass band is obtained. A frequency-variable filter (10) includes multiple series-arm resonators (111, 112, 113), multiple parallel-arm resonators (121, 122, 123), a variable capacitor (21), and an inductor (31) having a fixed inductance. The multiple series-arm resonators (111, 112, 113) and the multiple parallel-arm resonators (121, 122, 123) are connected in a ladder shape. The variable capacitor (21) is connected in series with the parallel-arm resonator (121). The fixed inductor (31) is connected in series with the parallel-arm resonator (123).

Abstract: In an acoustic wave device including a piezoelectric material substrate and supporting body bonded with each other through a bonding layer, it is an object to provide the acoustic wave device having the structure for further improving the propagation loss and temperature characteristics of frequency of an acoustic wave. An acoustic wave device includes a piezoelectric material substrate, an electrode on the piezoelectric material substrate, a supporting body, and a bonding layer for bonding the piezoelectric material substrate and the supporting body. The bonding layer is composed of quartz crystal.

Abstract: A surface elastic wave resonator comprises a piezoelectric material to propagate the surface elastic waves and a transducer inserted between a pair of reflectors comprising combs of interdigitated electrodes and having a number Nc of electrodes connected to a hot spot and an acoustic aperture W wherein the relative permittivity of the piezoelectric material is greater than about 15, a product of Nc·W/fa for the transducer being greater than 100 ?m·MHz?1, where fa is the antiresonance frequency of the resonator. A circuit comprises a load impedance and a resonator according to the invention and having an electrical response manifesting as a peak in the coefficient of reflection S11 at a frequency of a minimum value of the parameter S11 that is lower than ?10 dB, the antiresonance peak of the resonator being matched to the impedance of the load.

Abstract: A surface acoustic wave filter includes a longitudinally coupled filter connected between an input terminal and an output terminal on a main surface of a piezoelectric substrate and that includes longitudinally coupled resonators and a parallel arm resonator connected between a node between the input terminal and the longitudinally coupled filter and ground. A line connecting IDT electrodes at an input side of a portion of the longitudinally coupled resonators to the ground and a line connecting the parallel arm resonator to the ground are independently provided and are connected to the same ground terminal.

Abstract: An acoustic wave filter device includes a ground connection terminal connected to an external ground electrode, a serial arm resonator, a first parallel arm circuit connected to a first node of the serial arm resonator, the first node being positioned closer to an input/output terminal, and to the ground connection terminal, and a second parallel arm circuit connected to a second node of the serial arm resonator, the second node being positioned closer to an input/output terminal, and to the ground connection terminal. The first parallel arm circuit includes a parallel arm resonator having a resonant frequency higher than a center frequency of a filter pass band, and a frequency varying circuit connected to the parallel arm resonator and the ground connection terminal. The second parallel arm circuit includes a parallel arm resonator having a resonant frequency higher than the center frequency of the filter pass band.

Abstract: An elastic wave device in which a recess is provided on an upper side of a support, a piezoelectric thin film covers the recess, and an IDT electrode is provided on an upper surface of the piezoelectric thin film. A plate wave of an S0 mode or SH0 mode is used. A plurality of grooves are provided in the upper surface or lower surface of the piezoelectric thin film at a portion of the piezoelectric thin film that is positioned on a hollow section.

Abstract: An acoustic wave device includes first to third acoustic wave resonators connected in series, and the first acoustic wave resonator and the third acoustic wave resonator are respectively disposed on one side and another side of the second acoustic wave resonator. In the first to third acoustic wave resonators, a first common busbar is connected to one of reflectors of the first and second acoustic wave resonators, and a second common busbar is connected to one of reflectors of the second and third acoustic wave resonators.

Abstract: Surface acoustic wave (SAW) resonator, SAW filters, and methods of fabricating SAW filters. A first plurality of parallel conductors extending from a first bus bar are formed on a surface of a 128-degree Y-cut lithium niobate substrate. A second plurality of parallel conductors extending from a second bus bar are formed on the surface of the substrate, the second plurality of parallel conductors interleaved with the first plurality of parallel conductors. An SiO2 layer overlays the first and second pluralities of parallel conductors. The first and second pluralities of parallel conductors are substantially copper and have a thickness DCU defined by 0.12P?DCU?0.24P, where P is a center-to-center spacing of adjacent parallel conductors. The SiO2 layer has a thickness DOX defined by 3.1DCU?DOX?4.5DCU.

Abstract: A filter and a method for forming a filter are disclosed. In an embodiment a filter includes a first port, a second port and a signal path between the first port and the second port. The filter further includes a plurality of series resonators electrically connected in series in the signal path, a plurality of shunt paths, each electrically connecting the signal path to ground and one parallel resonator electrically connected in each shunt path, wherein at least one series resonator is an electroacoustic resonator, and wherein at least one parallel resonator comprises one acoustically inactive capacitor or an electrical connection of an acoustically active resonator and a de-tuning coil.

Abstract: An elastic wave device includes an IDT electrode disposed on a piezoelectric substrate and including first and second electrode fingers that are interdigitated. A region where the first and second electrode fingers overlap each other as seen in a direction of propagation of elastic waves is an excitation region. Edge portions where an acoustic velocity is lower than an acoustic velocity in a central portion are disposed on opposite sides of a central portion in the excitation region. A first busbar and second busbar include inner busbar portions, central busbar portions, and outer busbar portions. First and second offset electrode fingers extend from the inner busbar portions toward the leading ends of the second electrode fingers or first electrode fingers.

Abstract: A filter (11) includes a series-arm circuit (10) connected between an input/output terminal (11m) and an input/output terminal (11n); and a parallel-arm circuit (20) connected between a ground and a path that connects the input/output terminal (11m) and the input/output terminal (11n). One circuit among the series-arm circuit (10) and the parallel-arm circuit (20) is constituted by a parallel-arm resonator (p1) and a parallel-arm resonator (p2) that are connected in parallel to each other and that are connected to a node (x1) on the path. The parallel-arm resonators (p1) and (p2) form a pass band, together with another circuit among the series-arm circuit (10) and the parallel-arm circuit (20). The parallel-arm resonator (p2) has a resonant frequency lower than a resonant frequency of the parallel-arm resonator (p1) and has an impedance higher than an impedance of the parallel-arm resonator (p1).

Abstract: An elastic wave device includes an IDT electrode on a piezoelectric substrate to define a longitudinally coupled resonator elastic wave filter, a three-dimensional wiring portion on the piezoelectric substrate and connected to the longitudinally coupled resonator elastic wave filter, and a cover surrounding the longitudinally coupled resonator elastic wave filter on the piezoelectric substrate. The three-dimensional wiring portion includes a lower layer wiring line, an upper layer wiring line, and an insulating layer stacked between the lower layer wiring line and the upper layer wiring line. The cover includes a portion on the three-dimensional wiring portion.

Abstract: A high pass filter includes: a first resonant circuit including an inductor and a capacitor in parallel between first and second terminals; a second resonant circuit including an inductor and a capacitor in series between a first end of the first resonant circuit and a ground; a third resonant circuit including an inductor and a capacitor in series between a second end of the first resonant circuit and the ground; a fourth resonant circuit disposed between the first end of the first resonant circuit and the first terminal, and including a first acoustic resonator; and a fifth resonant circuit disposed between the second end of the first resonant circuit and the second terminal, and including a second acoustic resonator. Attenuation regions respectively formed by the first, second, and third resonant circuits are arranged in lower frequency regions than attenuation regions respectively formed by the fourth and fifth resonant circuits.

Abstract: An integrated module of acoustic wave device with active thermal compensation comprises a substrate, an acoustic wave filter, an active adjustment circuit and at least one variable capacitance device. The acoustic wave filter comprises a plurality of series acoustic wave resonators formed on the substrate, at least one shunt acoustic wave resonator formed on the substrate and a thermal sensing acoustic wave resonator. Each of the variable capacitance device is connected in parallel to one of the series and shunt acoustic wave resonators. The active adjustment circuit outputs an active thermal compensation signal correlated to a thermal variation sensed by the thermal sensing acoustic wave resonator to the variable capacitance device. The active thermal compensation signal induces a capacitance variation of the variable capacitance device such that the impact of the thermal variation to the acoustic wave device is compensated.

Abstract: An elastic wave device includes a multilayer film including a piezoelectric thin film laminated on a support substrate. In a region outside a region in which an IDT electrode is provided, the multilayer film is not disposed. A first insulating layer extends from at least a portion of the region to a region on the piezoelectric thin film. A wiring electrode extends to a region on the first insulating layer from a region on the piezoelectric thin film and to extend to a region on a portion of the first insulating layer located in the region. A support layer including a cavity defining a hollow space is provided on the support substrate. The support layer includes, on the wiring electrode, a portion extending from the region to a region above an inner end of the first insulating layer.

Abstract: An object of the present invention is to provide a method of manufacturing a composite substrate including a piezoelectric layer with less Li amount variation and a support substrate. A method of manufacturing a composite substrate of the present invention includes a step of performing ion implantation into a piezoelectric substrate, a step of bonding the piezoelectric substrate and the support substrate, a step of separating the bonded substrate, at an ion-implanted portion of the piezoelectric substrate, into the piezoelectric layer bonded to the support substrate and the remaining piezoelectric substrate after the step of bonding the piezoelectric substrate and the support substrate, and a step of diffusing Li into the piezoelectric layer after the separating step.

Abstract: A filter includes a series-arm resonator located on a path that connects an input/output terminal (11m) with an input/output terminal (11n), and a first parallel-arm resonant circuit connected between a node, which is located on the path, and ground. The first parallel-arm resonant circuit includes a parallel-arm resonator, and a pair of a capacitor and a switch connected in parallel with each other and in series with the parallel-arm resonator between the parallel-arm resonator and ground. An interconnect line (a1) is connected to the input/output terminal (11m), and an interconnect line (a2) is connected to the input/output terminal. The parallel-arm resonator and the switch are connected by an interconnect line (a3). The interconnect line (a3) has a characteristic impedance lower than a characteristic impedance of the interconnect line (a1) or a characteristic impedance of the interconnect line (a2).

Abstract: A filter includes a series-arm resonator connected on a path connecting input/output terminals, and first and second parallel-arm resonators connected between the same node on the path and ground. A resonant frequency of the second parallel-arm resonator is higher than a resonant frequency of the first parallel-arm resonator, and an anti-resonant frequency of the second parallel-arm resonator is higher than an anti-resonant frequency of the first parallel-arm resonator. Each of the first and second parallel-arm resonators includes an acoustic wave resonator including an IDT electrode. The IDT electrode in the second parallel-arm resonator has a higher duty ratio than the IDT electrode in the first parallel-arm resonator, where the duty ratio is the ratio of the width to the pitch of electrode fingers.

Abstract: An elastic wave device includes a piezoelectric substrate and IDT electrodes including first and second busbars and first and second electrode fingers. An intersection of the IDT electrodes includes a center region, and low-acoustic-velocity sections at both end portions of the center region in the direction in which the electrode fingers extend in the center region, sections in which the acoustic velocity is lower than in the center region. The length of the gap between the edge of the first electrode fingers and the second busbar and the length of the gap between the edge of the second electrode fingers and the first busbar are about 0.62? or more and about 0.98? or less, where ? denotes the wavelength, which is determined by the finger pitch of the IDT electrodes.

Abstract: Due to strong needs to reduce the dimensions and the cost of the RF filters and to reduce the number of filters required in an mobile handsets and wireless system covering numbers of operation bands, tunable RF filters which can cover as many bands or frequency ranges as possible are needed so that the number of filters can be reduced in the mobile handsets and wireless systems. The present invention provides tunable surface acoustic wave (SAW) IDT structures with the resonant frequency of the acoustic wave to be excited and to be transmitted tuned by digital to analog converters (DACs). The DAC converts an input digital signal to an output DC voltage and provide DC bias voltages to the SAW IDTs through integrated thin film biasing resistors. The polarity and the value of the output DC voltage are controlled by the input digital signal to achieve selection and tuning of the resonant frequency of the SAW IDTs.

Abstract: An elastic wave device includes a mount board, a transmit filter, a receive filter, and a sealing resin layer. The transmit filter includes a first piezoelectric substrate, and is joined to the mount board by first bumps. The receive filter includes a second piezoelectric substrate, and is joined to the mount board by second bumps. The sealing resin layer is provided on the mount board. The height of each first bump is H1; the joint area, on the first piezoelectric substrate side, of each first bump is A1; and the joint area, on the mount board side, of each first bump is B1; the height of each second bump is H2; the joint area, on the second piezoelectric substrate side, of each second bump is A2; and the joint area, on the mount board side, of each second bump is B2. The first bumps and the second bumps satisfy at least one of: A1>A2 and B1>B2; and H1<H2.

Abstract: A system for a wireless communication infrastructure using single crystal devices. The wireless system can include a controller coupled to a power source, a signal processing module, and a plurality of transceiver modules. Each of the transceiver modules includes a transmit module configured on a transmit path and a receive module configured on a receive path. The transmit modules each include at least a transmit filter having one or more filter devices, while the receive modules each include at least a receive filter. Each of these filter devices includes a single crystal acoustic resonator device with at least a first electrode material, a single crystal material, and a second electrode material. Wireless infrastructures using the present single crystal technology perform better in high power density applications, enable higher out of band rejection (OOBR), and achieve higher linearity as well.

Abstract: A multiplexer includes filters and a common terminal connected to an antenna element by a connection path, a first inductance element being connected between the connection path and a reference terminal. A terminal closer to the antenna element among an input terminal and an output terminal of one filter among the filters is connected to a parallel resonator and is connected to the common terminal with a second inductance element interposed therebetween. A terminal closer to the antenna element among an input terminal and an output terminal of each of other filters other than the one filter among the filters is connected to the common terminal and a series resonator.

Abstract: A module device includes electrode lands and signal wires on an upper surface defining one main surface of a module substrate. A filter chip is mounted on the module substrate. The filter chip includes first bumps connected to a signal potential, second bumps connected to a ground potential, and a third bump not electrically connected to a functional electrode portion. In a mount region, the third bump which is a floating bump is electrically connected to the signal wire.

Abstract: A surface acoustic wave (SAW) device includes a silicon substrate, a piezoelectric substrate formed of lithium niobate, an alumina layer interposed between the silicon substrate and the piezoelectric substrate, and at least one electrode on the piezoelectric substrate.

Abstract: A wafer-level chip-scale package includes a body, a conductive via passing through the body, a contact bump formed at a lower portion of the body and in electrical connection with a lower end of the conductive via, a piezoelectric substrate directly bonded to an upper end of the conductive via, and a cavity defined between a portion of the body and the piezoelectric substrate.

Abstract: Methods of forming a shear-mode acoustic wave filter on V-shaped grooves of a [100] crystal orientation Si layer over a substrate and the resulting devices are provided. Embodiments include forming a set of V-shaped grooves in a [100] crystal orientation Si layer over a substrate; and forming a shear-mode acoustic wave filter over the V-shaped grooves, the shear-mode acoustic wave filter including a first metal layer, a thin-film piezoelectric layer, and a second metal layer, wherein the second metal layer is an IDT pattern or a sheet.

Abstract: A solder material includes an alloy of at least five elements including Sn, Cu, Sb, and In, and 20 mass % or less of Ag. The solidus temperature of the solder material is higher than 290° C., the liquidus temperature of the solder material is 379° C. or less and is higher than the solidus temperature, and the temperature difference between the liquidus temperature and the solidus temperature is 70° C. or less.

Abstract: An acoustic wave device includes: a piezoelectric substrate; an IDT that is formed on the piezoelectric substrate and includes a pair of comb-shaped electrodes facing each other, each of the pair of comb-shaped electrodes including an grating electrode that excites an acoustic wave and a bus bar to which the grating electrode is connected; and reforming regions that are located only inside the piezoelectric substrate and arranged at intervals under the IDT, and in which a material of the piezoelectric substrate is reformed.

Abstract: An elastic wave filter device includes a piezoelectric film, a high acoustic velocity support substrate in which an acoustic velocity of a propagating bulk wave is larger than an acoustic velocity of a main mode elastic wave propagating in the piezoelectric film, and IDT electrodes in contact with the piezoelectric film. A serial arm resonator and a parallel arm resonator are defined by the IDT electrodes such that, a direction in which tips of first and second electrode fingers are connected defines a tilt angle with respect to a propagation direction of elastic waves excited by the IDT electrodes. A tilt angle of the serial arm resonator is different from a tilt angle of the parallel arm resonator.

Abstract: A surface acoustic wave device includes a piezoelectric substrate and an IDT electrode on the piezoelectric substrate. The IDT electrode includes a main electrode layer and a barrier layer between the piezoelectric substrate and the main electrode layer. The main electrode layer is inside a region in which the barrier layer is provided in plan view to suppress diffusion between the piezoelectric substrate and the main electrode layer when a voltage is applied to the IDT electrode.

Abstract: An elastic wave device includes an IDT electrode provided on a main surface of a LiTaO3 substrate, and uses plate waves in an SH0 mode, which is a basic mode of SH waves. A wavelength-normalized thickness of the LiTaO3 substrate normalized by a wavelength determined by a pitch of electrode fingers of the IDT electrode, and an Al equivalent wavelength-normalized thickness of the IDT electrode satisfy any one of combinations listed in the following table: (a) The wavelength-normalized thickness is about 0.01 or more and about 0.30 or less, and the wavelength- normalized thickness of Al is about 0.04 or more and about 0.1 or less. (b) The wavelength-normalized thickness is about 0.01 or more and about 0.70 or less, and the wavelength- normalized thickness of Al is about 0.04 or more and about 0.08 or less.

Abstract: An elastic wave device includes a piezoelectric substrate, filter electrodes, input terminal electrodes, output terminal electrodes, and ground terminal electrodes. The filter electrodes are disposed along a first direction. The ground terminal electrodes corresponding to the filter electrodes are respectively disposed between adjacent filter electrodes, and are common to the adjacent filter electrodes.

Abstract: An elastic wave device includes a LiNbO3 substrate, an IDT electrode provided on the LiNbO3 substrate, and a dielectric film that is provided on the LiNbO3 substrate so as to cover the IDT electrode and includes a projection on an upper surface of the stated dielectric film. A main mode of an elastic wave excited by the IDT electrode uses a Rayleigh wave, and a thickness of the IDT electrode is set such that a frequency at which a response by an SH wave appears is lower than a resonant frequency of the Rayleigh wave.

Abstract: An elastic wave device includes a piezoelectric substrate, and elastic wave elements on the piezoelectric substrate and including IDT electrodes, respectively. The IDT electrode of a first of the elastic wave elements includes first and second busbars, and the IDT electrode of a second of the elastic wave elements includes third and fourth busbars. The second busbar and the third busbar extend parallel or substantially parallel to each other, and are spaced by a gap in a direction perpendicular or substantially perpendicular to an elastic-wave propagating direction. Each of the second and third busbars includes first and second electrode layers at least a portion of which is laminated on the first electrode layer. The second electrode layer of the second busbar is cut in at least one location in a direction crossing the elastic-wave propagating direction.

Abstract: Stacked wafer-level packaging devices. In some embodiments, a wireless device includes a transceiver configured to generate a radio-frequency (RF) signal. The wireless device also includes a front-end module (FEM) in communication with the transceiver, the front-end module including a packaging substrate configured to receive a plurality of components, the front-end module further including a stacked assembly implemented on the packaging substrate, the stacked assembly including a first wafer-level packaging (WLP) device having a radio-frequency (RF) shield, the stacked assembly further including a second wafer-level packaging device having an RF shield, the second wafer-level packaging device positioned over the first wafer-level packaging device such that the RF shield of the second wafer-level packaging device is electrically connected to the RF shield of the first wafer-level packaging device.

Abstract: A surface acoustic wave resonator includes: a piezoelectric substrate; a plurality of metal structures formed on a top surface of the piezoelectric substrate to have a negative profile; and a temperature compensation layer covering the top surface of the piezoelectric substrate and the plurality of metal structures. The surface acoustic wave resonator according to an embodiment of the present invention has a frequency characteristic insensitive to change of profile and has an effect of having a high semi-resonance Q value characteristic.

Abstract: A wafer-level chip-scale package includes a body, a conductive via passing through the body, a contact bump formed at a lower portion of the body and in electrical connection with a lower end of the conductive via, a piezoelectric substrate directly bonded to an upper end of the conductive via, and a cavity defined between a portion of the body and the piezoelectric substrate.

Abstract: An input port, an output port, and a plurality of serial resonators and a plurality of parallel resonators connected in a ladder type between the input port and the output port and including IDT electrodes are provided. The plurality of parallel resonators include at least one first parallel resonator having a resonance frequency lower than resonance frequencies of the plurality of serial resonators, and at least one second parallel resonator having a resonance frequency higher than antiresonance frequencies of the plurality of serial resonators.

Abstract: A high-frequency module includes a SAW filter including a piezoelectric substrate and an electrode pattern provided on the piezoelectric substrate, a module substrate, a resin member covering the SAW filter, and a wiring pattern connected to the electrode pattern and provided on the resin member. The electrode pattern and the wiring pattern are inductively coupled, capacitively coupled, or inductively coupled and capacitively coupled with each other.

Abstract: An acoustic wave element of the present invention includes a piezoelectric substrate, an excitation electrode which is arranged on the piezoelectric substrate and includes a plurality of electrode fingers, and two reflectors arranged on the piezoelectric substrate, each of which includes a plurality of reflection electrode fingers, which sandwich the excitation electrode therebetween in the propagation direction of an acoustic wave. The excitation electrode includes a main region in the center vicinity of the line of the plurality of electrode fingers in which the intervals between the centers of the plurality of electrode fingers are uniformly a first interval. In the reflector, at least one of the reflection electrode fingers shifts to the excitation electrode side relative to virtual electrode finger positions which are repeatedly set at the first intervals from the electrode fingers in the main region.

Abstract: A method of thermally cooling a microwave coaxial cable run includes inserting in the cable run a bandpass filter, the bandpass filter including a power divider having an input RF connector defining a front end and the power divider having an output, the bandpass filter including a power combiner having an input coupled to the output of the power divider and the power combiner having an output RF connector defining a back end, and the bandpass filter having a heat sink mechanically secured between the power divider and the power combiner. Other methods and systems are also provided.

Abstract: In a surface acoustic wave filter, a parallel arm resonator includes an IDT electrode and reflectors. Comb-shaped electrodes of the IDT electrode each include a busbar electrode and electrode fingers connected thereto, and are arranged so that the electrode fingers of the respective comb-shaped electrodes are alternately located in a propagation direction of a surface acoustic wave. The reflectors are provided on both sides of the IDT electrode portion in the propagation direction of the surface acoustic wave so that reflector electrode fingers are parallel or substantially parallel to the electrode fingers. A distance between the electrode finger and the reflector electrode finger which are proximate to each other is about 10% or more and about 20% or less of a main pitch of the electrode fingers.

Abstract: An apparatus includes a filter. The filter includes a metal structure forming a cavity and includes a ceramic block, which is suspended in the cavity. The ceramic block has two removed portions, the removed portions removed from two opposing sides of the ceramic block. The ceramic block further has one or more slots that that span a region of ceramic between the two removed portions and connects chambers formed by the two regions with chambers formed by the one or more slots, wherein a combined structure of the ceramic block, cavity, and metal structure supports multiple fundamental TM modes and one fundamental TE mode. The filter comprises multiple coupling structures to couple radio frequency signals into and out of the filter. The apparatus may include multi-cavity filters including one and typically multiple ones of the filters.

Abstract: A filter includes: a piezoelectric substrate; one or more series resonators that are located on the piezoelectric substrate and are connected in series between an input terminal and an output terminal; at least one series resonator that is connected between a first node and a second node, is included in the one or more series resonators, and includes a reflector that is grounded, the first node and the second node being located between the input terminal and the output terminal; and a cancel line that is connected in parallel with the at least one series resonator between the first node and the second node, and cancels a signal outside a passband propagating through the at least one series resonator from the first node to the second node.

Abstract: A multiplexer includes a common terminal, a reception terminal, and transmission terminals; a reception filter between the common terminal and the reception terminal; a transmission filter between the common terminal and the transmission terminal; a transmission filter between the common terminal and the transmission terminal; a first inductor connected in series between the common terminal and the reception filter; a second inductor connected between the transmission terminal and the transmission filter; and a third inductor connected between the transmission terminal and the transmission filter. The first inductor and the second inductor couple with each other through a magnetic field, and the first inductor and the third inductor couple with each other through a magnetic field.

Abstract: An elastic wave device includes a substrate including a piezoelectric material layer and an IDT electrode on the piezoelectric material layer. The IDT electrode includes a Pt film, a Ti film on the Pt film, and an Al-based metal film on the Ti film. The Ti film is quasi-single-crystalline.

Abstract: A ladder filter includes a piezoelectric substrate, an insulating film on the piezoelectric substrate, first and second electrodes provided on the piezoelectric substrate and including a pair of busbars and plurality of electrode fingers, a first line electrode at least a portion of which is defined by the busbar at one side of the first electrode, a second line electrode at least a portion of which is defined by the busbar at one side of the second electrode, and a third line electrode laminated on the second line electrode. The first line electrode and the second line electrode are electrically connected to different electric potentials. The first line electrode is separated from the second line electrode by a predetermined distance. At least a portion of the third line electrode is overlapped with at least a portion of the first line electrode with the insulating film interposed therebetween in a laminating direction.

Abstract: An elastic wave device includes a first piezoelectric substrate including a first principal surface and a second principal surface, a second piezoelectric substrate including a first principal surface and a second principal surface and with a greater thickness than that of the first piezoelectric substrate, and ground terminals located on the second principal surface of the first piezoelectric substrate. The first principal surface of the first piezoelectric substrate and the first principal surface of the second piezoelectric substrate are joined to face each other. On the first principal surface of the first piezoelectric substrate, a first elastic wave filter is located. On the first principal surface of the second piezoelectric substrate, a second elastic wave filter is located. The out-of-band attenuation of the first elastic wave filter is greater than the out-of-band attenuation of the second elastic wave filter.

Abstract: An acoustic wave device includes: a piezoelectric film made of an aluminum nitride film containing a divalent element and a tetravalent element, or a divalent element and a pentavalent element; and an electrode that excites an acoustic wave propagating through the piezoelectric film.