Abstract: An acoustic wave device includes an interdigital transducer (IDT) electrode and a separate electrode facing the IDT electrode. The IDT electrode includes first and second comb-shaped electrode facing each other. The first comb-shaped electrode includes a first bus bar, first interdigitated electrode fingers, and first dummy electrode fingers. The second comb-shaped electrode includes a second bus bar second interdigitated electrode fingers interdigitated with the first interdigitated electrode fingers, second dummy electrode fingers facing the first interdigitated electrode fingers, weighted parts, and a non-weighted part. The weighted parts have electrodes at spaces between the second interdigitated electrode fingers and the second dummy electrode fingers. In the non-weighted part, there is no electrode at a space out of the spaces which is closest to the separate electrode in the non-interdigitated region.

Abstract: Aspects of a method and system for communicating via a spatial multilink repeater are provided. In this regard, a received signal may be frequency shifted to generate a plurality of repeated signals, wherein each repeated signal may be shifted by a different frequency with respect to the received signal. Each repeated signal may comprise one or more signal components and a phase and/or amplitude of each of the components may be controlled to control a directivity of the repeated signals. Each of the repeated signals may be generated by quadrature down-converting said received signal by mixing the received signal with a first LO signal pair, up-converting the down-converted signal by mixing it with a second LO signal pair, and adding or subtracting an in-phase portion and a quadrature-phase portion of the up-converted signal.

Abstract: A small-sized elastic wave apparatus in which heat generated at a portion of a cascade connection between resonators is sufficiently dissipated includes on one main surface of a piezoelectric substrate in an elastic wave filter mounted on a base substrate on which an input/output wiring line, a ground wiring line, and a floating wiring line insulated from the input/output wiring line and the ground wiring line are provided, first electrodes coupled to the input/output wiring line or the ground wiring line, second electrodes coupled to the floating wiring line, resonators, connection wiring lines connecting the resonators, and electrode wiring lines connecting the resonators and the first electrodes. The second electrodes are disposed in contact with the connection wiring lines cascading the resonators.

Abstract: According to an aspect of the invention, each of a filter, a duplexer and a communication module includes a plurality of series resonators connected to a signal line in series and a plurality of parallel resonators connected to the signal line in parallel. At least two of the plurality of parallel resonators are connected to the signal line between two of the plurality of series resonators in parallel, inductors are respectively connected to the at least two parallel resonators, and the inductors have different inductances from each other.

Abstract: An object is to obtain a steep and large attenuation amount in attenuation bands close to each other out of a band of a TV wave and to provide a filter in which the use number of inductors is reduced thereby to be able to contribute to downsizing of a device. Elastic wave resonators of a plurality of parallel arms for each forming plurality of attenuation band are connected to the same electric potential point in a signal path without aid of an inductor. Otherwise, a series circuit of a plurality of element parts generating series resonance is connected in a signal path as a parallel arm. Therefore, a large attenuation amount can be obtained in each of the plural attenuation bands, but a region equivalent to what is called a zero point exists between adjacent poles. However, there can be obtained a characteristic in which steep attenuations occur in both sides of the zero point even if the zero point exists.

Abstract: This disclosure provides implementations of filters and filter topologies, circuits, structures, devices, apparatus, systems, and related processes. In one aspect, a device includes one or more LC resonant circuit stages. In some implementations, each LC stage includes an inductor and a capacitor. Each LC stage also has a corresponding resonant frequency. The one or more LC stages are arranged to produce an unmodified passband over a range of frequencies having a corresponding bandwidth. One or more microelectromechanical systems (MEMS) resonators are arranged with the one or more LC stages. The one or more MEMS resonators are arranged with the one or more LC stages so as to modify characteristics of the unmodified passband such that the hybrid filter produces a modified passband having a modified bandwidth and one or more other modified band characteristics.

Abstract: A surface acoustic wave filter includes a ?-rotated Y-cut X-propagation lithium niobate substrate. The cut angle ranges from 20° to 40°. An interdigital transducer can be used for exciting a surface acoustic wave that is formed on the substrate.

Abstract: A method of forming a device is provided. A substrate having a component is provided and a sacrificial layer is formed over the component. The sacrificial layer includes a cavity portion disposed about the component and a tunnel portion adjacent to the cavity portion. In addition, an encapsulation layer having a cover portion and a perimeter portion is formed over the sacrificial layer. The cover portion encapsulates the cavity portion such that the cavity portion forms a cavity within the cover portion. The perimeter portion is disposed over the tunnel portion. Moreover, an access hole is formed in the perimeter portion of the encapsulation layer.

Abstract: A surface acoustic wave (SAW) based thin film deposition monitor device and system for monitoring the deposition of ultra-thin films and nanomaterials and the analysis thereof is characterized by acoustic wave device embodiments that include differential delay line device designs, and which can optionally have integral reference devices fabricated on the same substrate as the sensing device, or on a separate device in thermal contact with the film monitoring/analysis device, in order to provide inherently temperature compensated measurements. These deposition monitor and analysis devices can include inherent temperature compensation, higher sensitivity to surface interactions than quartz crystal microbalance (QCM) devices, and the ability to operate at extreme temperatures.

Abstract: A surface acoustic wave device includes: a sapphire substrate having a C-plane main surface; an aluminum nitride film which is formed on the main surface of the sapphire substrate; comb-like electrodes which are formed on the surface of the aluminum nitride film to excite surface acoustic waves; and a silicon dioxide film which covers the comb-like electrodes and the surface of the aluminum nitride film.

Abstract: A filter may be constructed from multiple acoustic elements in parallel. A filtering method may comprise passing a signal to be filtered through such parallel acoustic elements. Such filtering may be applicable to communication devices.

Abstract: In embodiments, a piezoelectric acoustic wave (PBAW) device may include a substrate and a resonator comprising a plurality of electrodes coupled with the surface of the substrate. A dielectric overcoat may be disposed over the substrate and the resonator. In embodiments, and electrode in the resonator electrode may have a width that is based at least in part on a period of the resonator. By selecting the width of the electrode based at least in part on the period of the resonator, a spurious-mode of the passband of the PBAW device may be suppressed.

Abstract: An electronic component includes a support layer that surrounds an element region on a principal surface of a piezoelectric substrate, when viewed in plan from a z-axis direction. A surface acoustic wave element is provided in the element region. A cover layer is provided on the support layer, and is opposed to the principal surface. A pillar member connects the principal surface and the cover layer in a space surrounded by the principal surface, the support layer, and the cover layer, and does not contact with the support layer.

Abstract: A SAW element has a substrate, electrode fingers on an upper surface of the substrate, and mass-adding films on upper surfaces of the electrode fingers. When viewing the cross-sections perpendicular to the extending directions of the electrode fingers, the mass-adding films have the narrowest widths at an upper sides in the cross-sections. By arranging the mass-adding films having such shape on the upper surfaces of the electrode fingers, the electromechanical coupling factor can be made high.

Abstract: An elastic guided acoustic wave coupling resonator filter includes a dielectric layer interposed between piezoelectric substrates, with interdigital transducers on each substrate generally positioned at an interface between the substrates and the dielectric layer. The interdigital transducers on one substrate are aligned with the transducers on the opposing substrate and include cascaded filter tracks. The cascaded orientation between the two filter tracks includes either a differential connection or a balanced connection. As a result, the interdigital transducers are electrically isolated yet acoustically coupled to each other.

Abstract: A device, comprising a substrate having opposing first and second surfaces, a first surface acoustic wave resonator disposed on the first surface of the substrate, a second surface acoustic wave resonator disposed on the second surface of the substrate, a first adhesive layer sandwiched between the first surface acoustic wave resonator and the substrate, and a second adhesive layer sandwiched between the second surface acoustic wave resonator.

Abstract: A surface acoustic wave (SAW) device includes a piezoelectric crystal substrate on which an acoustic channel is formed, at least one electro-mechanical transducer operatively associated with the acoustic channel, and an encapsulating casing having a cover spaced above the acoustic channel and thereby defining a sealed volume around the substrate. A mass deposition device within the casing is spaced between the acoustic channel and the cover, preferably as gold-coated heating wire spanning the acoustic channel and having ends that are connectable to an electric power source outside the casing. Stress and aging shifts can be induced after sealing of the cover. Tuning is achieved by evaporating metal molecules off the heated wire onto the acoustic channel as the frequency is monitored, until the mass loading of metal molecules on the transducer produces the target frequency.

Abstract: A new type of very broad bandwidth filters with small insertion loss and high return loss are given. The new filter uses a substrate that can propagate a PSAW and fan shaped transducers of low metallisation height, high metallisation ratio, low reflectivity and high coupling coefficient.

Abstract: An acoustic wave device includes: an acoustic wave filter chip that is mounted on a multilayered substrate including wiring layers; a first wiring that is electrically coupled to an internal circuit of the acoustic wave filter chip and formed in a first wiring layer of the multilayered substrate; a second wiring that is formed in a second wiring layer separate from the first wiring layer; and a via wiring that penetrates at least a part of the multilayered substrate and connects the first wiring to the second wiring; wherein the first wiring, the second wiring, and the via wiring forms a first inductor of which a direction of magnetic flux intersects with a stacking direction of the multilayered substrate.

Abstract: An elastic wave device has a convex portion on the top face of a first dielectric layer over an IDT electrode when the elastic wave device has a structure of a boundary wave device in which a film thickness of a second dielectric layer is not less than 1.6 times as much as a pitch width of the IDT electrode. This convex portion increases an electromechanical coupling coefficient of SH wave that is the major wave. Accordingly, good filter characteristics can be easily achieved.

Abstract: The branching filter has the piezoelectric substrate having the main surface on which there are formed a transmission filter, which includes an input electrode and an antenna electrode, and a reception filter, which includes an output electrodes and the antenna electrode. The branching filter also has the mounting substrate having, on a first main surface, a first electrode group that is connected to the transmission filter and reception filter and that is formed symmetrical with respect to a line when viewed from the above, and also having, on a second main surface locating on the opposite side to the first main surface, a second electrode group that is connected to the circuit interconnects of an external circuit board and that is formed symmetrical with respect to a line when viewed from the above.

Abstract: According to an exemplary embodiment, a method of forming a metal layer having reduced roughness includes a step of forming a seed layer over a dielectric layer. The method further includes a step of forming the metal layer over the seed layer. The seed layer causes a top surface of the metal layer to have reduced roughness. The seed layer and the metal layer can be formed in a same process chamber or in different process chambers. The dielectric layer, the seed layer, and the metal layer having reduced roughness can be utilized in an acoustic mirror structure.

Abstract: A device includes a plurality of electrode actuated acoustic resonators coupled to form complementary paths to operate as a filter. Each acoustic resonator has an electrical input and an electrical output that contributes to a static capacitance. A compensation impedance is coupled to at least one of the paths to reduce adverse effects from the static capacitances of the acoustic resonators.

Abstract: An acoustic wave device includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a dielectric layer provided so as to cover the IDT electrode, and a first stress relaxation layer provided on the dielectric layer. Furthermore, the acoustic wave device includes an extraction electrode connected to the IDT electrode and extracted onto the first stress relaxation layer, and a bump provided on the extraction electrode. An elastic modulus of the first stress relaxation layer is smaller than that of the dielectric layer.

Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

Abstract: Some embodiments of the invention provide a filter having at least one first filter, each first filter being a band-reject type filter having a first set of filter parameters that are a function of a first material used to fabricate the at least one first filter, and at least one second filter, each second filter having a second set of filter parameters that are a function of a second material used to fabricate the at least one second filter, each second filter being one of a band-reject type filter and a band pass type filter. The at least one first filter and the at least one second filter are then cascaded together to form the filter. The cascaded filter has a new third set of filter parameters that are a function of both the first material and the second material.

Abstract: A heated resonator includes a base substrate, a piezoelectric piece having a thickness and a top side and a bottom side, a first electrode on the top side, a second electrode opposite the first electrode on the bottom side, an anchor connected between the piezoelectric piece and the base substrate, and a heater on the piezoelectric material. A thermal resistor region in the piezoelectric piece is between the heater and the anchor.

Abstract: A surface acoustic wave device responsive to an interrogation signal for producing a return signal. The surface acoustic wave device comprises an antenna for receiving the interrogation signal, a piezoelectric substrate, one or more frequency-selective reflective arrays disposed on the piezoelectric substrate, an interdigital transducer for launching an incident surface acoustic wave on the substrate in response to the interrogation signal, the incident surface acoustic wave propagating to the one or more frequency-selective reflective arrays, a reflected surface acoustic wave reflected from each one of the reflective arrays, the interdigital transducer receiving the reflected surface acoustic waves, and the return signal, responsive to each reflected surface acoustic waves.

Abstract: A tunable filter that is capable of magnifying a pass band width or increasing a frequency variable amount includes a resonator circuit portion provided in at least one of a series arm connecting an input terminal and an output terminal to each other and a parallel arm connecting the series arm and a ground potential to each other, a first variable capacitor is connected in series to the resonator circuit portion and a second variable capacitor is connected in parallel to the resonator circuit portion. The resonator circuit portion includes a piezoelectric substrate including LiNbO3 or LiTaO3, an elastic wave resonator including an electrode located on the piezoelectric substrate, and a bandwidth extending inductance Lx, Lx connected to the elastic wave resonator.

Abstract: A filter includes at least one series resonator and parallel resonators, the at least one series resonator and the parallel resonators including excitation electrodes and reflectors, the parallel resonators having different resonance frequencies, and at least one of the parallel resonators other than the parallel resonator having the highest resonance frequency being configured to have a pitch of reflectors that is smaller than that of excitation electrodes.

Abstract: An acoustic wave filter having reduced non-linearities as well as a production method are disclosed. A filter comprises a first electroacoustic transducer having a first metallization ratio and a second electroacoustic transducer having a second metallization ratio. The metallization ratios range from 0.2 to 0.8, and the metallization ratio of the first transducer is no more than 0.8 times the metallization ratio of the second transducer.

Abstract: An elastic wave filter device has a center frequency of a reception frequency band. A plurality of parallel arms are connected to a portion of a series arm on a second signal terminal side of a portion in which a first series-arm resonator is provided. Series-arm resonators among the plurality of series-arm resonators other than the first series-arm resonator include a series-arm resonator having a resonant frequency higher than the resonant frequency of the first series-arm resonator. The resonant frequency of the first series-arm resonator is equal to the reception frequency band.

Abstract: A transmission elastic wave filter element and a reception elastic wave filter element each flip-chip mounted to a principal surface of a substrate are sealed off by a sealing member. The sealing member includes a base portion in contact with the principal surface of the substrate and made of a first dielectric material, and a lower dielectric-constant portion made of a second dielectric material having a dielectric constant lower than that of the first dielectric material and arranged in at least one of a region of the sealing member that faces the transmission elastic wave filter element on a side opposite from the substrate with respect to the transmission elastic wave filter element, and a region of the sealing member that faces the reception elastic wave filter element on the side opposite from the substrate with respect to the reception elastic wave filter element.

Abstract: An elastic wave device includes a piezoelectric substrate, an IDT electrode disposed on the piezoelectric substrate, an internal electrode disposed on the piezoelectric substrate and connected to the IDT electrode, a support pillar disposed on the piezoelectric substrate and provided around the IDT electrode, a top panel provided on the support pillar to cover a space above the IDT electrode, an insulation protector provided to cover the support pillar and the top panel, an external electrode disposed on the insulation protector, a conductor pattern disposed on the insulation protector in order to obtain inductance, and a connection electrode provided through the insulation protector, to connect the external electrode and the internal electrode to each other.

Abstract: An elastic wave filter device includes a ladder filter unit, a first inductor, a second inductor, and a capacitor. The ladder filter unit includes at least three parallel arms including a first parallel arm. The first inductor is connected between the first parallel arm and a ground potential. The second inductor is connected between at least two of the parallel arms, other than the first parallel arm among the at least three parallel arms, and the ground potential. The capacitor is connected between a connection point of the first parallel arm and the first inductor and a connection point of the second inductor and the at least two parallel arms.

Abstract: In an elastic wave duplexer, a reception elastic wave filter element and a transmission elastic wave filter element are flip-chip mounted to a principal surface of a substrate. A sealing member is disposed on the principal surface of the substrate to cover and seal off at least one of the reception elastic wave filter element and the transmission elastic wave filter element. The sealing member has different thicknesses between a reception-element-covering region, which faces the reception elastic wave filter element on the side opposite from the substrate with respect to the reception elastic wave filter element, and a transmission-element-covering region, which faces the transmission elastic wave filter element on the side opposite from the substrate with respect to the transmission elastic wave filter element.

Abstract: A boundary acoustic wave filter device includes an electrode structure provided at a boundary between a piezoelectric body and a dielectric body laminated on the piezoelectric body and utilizes an SH-type boundary acoustic wave that propagates along the boundary. In the boundary acoustic wave filter device, the electrode structure includes a longitudinally coupled resonator boundary acoustic wave filter portion that has a first IDT and second and third IDTs arranged respectively on both sides of the IDT in a direction in which the boundary acoustic wave propagates. At portions at which two IDTs are located adjacent to each other in the direction in which the boundary acoustic wave propagates, narrow pitch electrode finger portions are provided in the IDTs, and the pitch of the electrode fingers of the narrow pitch electrode finger portion is different from the pitch of the electrode fingers of each of the narrow pitch electrode finger portions.

Abstract: Embodiments of the present invention provide systems, devices and methods for improving both the bandwidth of a BAW resonator bandpass filter and the suppression of out-of-band frequencies above the passband. In various embodiments of the invention, blocker inductors are located in series between the filter input and the filter output to realize both bandwidth enhancement and improved out-of-band frequency rejection. For example, a first blocker inductor may be located at the input and a second blocker inductor may be located at the output of a BAW resonator bandpass filter.

Abstract: A surface acoustic wave device comprises a piezoelectric substrate (1), at least one inter-digital transducers (IDT) (2) provided on the piezoelectric substrate, at least one elongated electrode pad (4) electrically connected to the IDT, and at least one stud bump (5) disposed on the electrode pad such that an LC component of the surface acoustic wave device has a predetermined value.

Abstract: An acoustic wave bandpass filter comprises at least an input first acoustic wave resonator with an output surface, and an output second acoustic wave resonator with an input surface, said resonators being coupled to each other along a set direction, the input and output surfaces being substantially opposite, and at least one first phononic crystal structure between said input and output resonators and/or a second phonic crystal structure at the periphery of said resonators so as to guide the acoustic waves, generated by said input resonator, toward said output resonator along said set direction, the resonators ensuring an impedance conversion and/or a mode conversion.

Abstract: A SAW element has a substrate; an IDT electrode located on an upper surface of the substrate and comprises Al or an alloy containing Al; a first film located on an upper surface of the IDT electrode; and a protective layer which covers the IDT electrode provided with the first film and the portion of the substrate exposed from the IDT electrode, which has a thickness from the upper surface of the substrate larger than a total thickness of the IDT electrode and first film, and which contains a silicon oxide. The first film contains a material which has a larger acoustic impedance than the material (Al or the alloy containing Al) of the IDT electrode and the silicon oxide and which has a slower propagation velocity of an acoustic wave than the material of the IDT electrode and the silicon oxide.

Abstract: A ladder filter including a series arm resonator and a parallel arm resonator disposed on the same common piezoelectric substrate achieves improved miniaturization. The ladder filter includes series arm resonators and parallel arm resonators, which include elastic wave resonators, and are disposed on the same common piezoelectric substrate, at least one parallel arm resonator of the series arm resonators and the parallel arm resonators includes a first resonator and a second resonator electrically connected in parallel to each other, and the first resonator and the second resonator are arranged in parallel or substantially in parallel in a direction perpendicular or substantially perpendicular to an elastic wave propagation direction, on one side outside one series arm resonator of remaining resonators in the elastic wave propagation direction thereof.

Abstract: A surface acoustic wave resonator includes: an IDT which is disposed on a quartz crystal substrate with an Euler angle of (?1.5°???1.5°, 117°???142°, 41.9°?|?|?49.57°) and which excites a surface acoustic wave in an upper mode of a stop band; and an inter-electrode-finger groove formed by recessing the quartz crystal substrate between electrode fingers of the IDT, wherein the following expression: 0.01??G where ? represents a wavelength of the surface acoustic wave and G represents a depth of the inter-electrode-finger groove, is satisfied and when a line occupancy of the IDT is ?, the depth of the inter-electrode-finger groove G and the line occupancy ? are set to satisfy the following expression: ?2.5×G/?+0.675????2.5×G/?+0.775.

Abstract: An acoustic wave device includes: a substrate; an input terminal that is located on a first surface of the substrate, and to which a high-frequency signal is input; a resonator that is connected to the input terminal, and to which a high-frequency signal input to the input terminal is input; and an insulating layer that is located between the input terminal and the substrate, and has a permittivity smaller than that of the substrate.

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a fixed electrode with a plurality of fingers on the piezoelectric substrate. The method further includes forming a moveable electrode with a plurality of fingers over the piezoelectric substrate. The method further includes forming actuators aligned with one or more of the plurality of fingers of the moveable electrode.

Abstract: An acoustic wave resonator includes a piezoelectric substrate and first and second comb-shaped electrodes provided on the piezoelectric substrate and interdigitating with each other. The first comb-shaped electrode includes a first busbar and first electrode fingers extending in a direction non-perpendicular to a direction in which the first busbar extends. The second comb-shaped electrode includes a second busbar and second electrode fingers extending from the second busbar and interdigitating with the first electrode fingers at an interdigitating region. This acoustic wave resonator can suppress a spurious response due to a transverse mode and has a high Q value.

Abstract: An elastic wave filter that prevents damage caused by ESD is constructed such that a distance between an electrode finger or a dummy electrode of a first IDT electrode and an adjacent electrode finger or an adjacent dummy electrode of a fourth comb-shaped electrode, which is a floating electrode that is not connected to any of an input terminal, output terminals, and a ground terminal, is longer than a distance between the electrode finger or the dummy electrode of the first IDT electrode and an adjacent electrode finger or an adjacent dummy electrode of a third comb-shaped electrode, which is connected to the input terminal, the output terminal, or the ground terminal.

Abstract: A method and structure are provided for implementing surface mount components with symmetric reference balance. A first reference and an incoming signal are received in a surface mounted device (SMD) package and a second reference and the outgoing signal are output from the SMD package. A capacitor structure is defined within the SMD package between the first reference and the second reference. The capacitor structure includes a balanced impedance structure between the first reference and the second reference. A component connected between the received incoming signal and output signal is generally centrally located within the capacitor structure.

Abstract: A surface acoustic wave (SAW) filter device includes an input port for receiving an unbalanced signal, a pair of input/output ports, a first SAW filter for receiving the unbalanced signal from the input port and outputting balanced signals to the pair of input/output ports, a second SAW filter for receiving the balanced signals output from the pair of input/output ports and outputting balanced signals, and a pair of output ports for outputting the balanced signals output from the second SAW filter. The first SAW filter includes a first longitudinally-coupled SAW resonator having a first unbalanced signal input port and first and second balanced signal output ports, and a second longitudinally-coupled SAW resonator having a second unbalanced signal input port and third and fourth balanced signal output port. The first and second unbalanced signal input ports are electrically connected to the input port.

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.