Abstract: An optical integrator has a plurality of wavefront dividing elements two-dimensionally arrayed, and is so configured that a ray group obliquely incident to an optical-axis center of an entrance face of each wavefront dividing element is emitted in parallel with the optical axis from the wavefront dividing element. In each of a required number of wavefront dividing elements out of the plurality of wavefront dividing elements, at least one curved optical face of the wavefront dividing element is formed as inclined around an axis along a predetermined direction passing an optical-axis center of an entrance face of the wavefront dividing element and being perpendicular to the optical axis AXe.

Abstract: An apparatus and method for nanopatterning of substrates using the demagnified Talbot effect, wherein: (a) large arrays of nanostructures can rapidly be printed; (b) short extreme ultraviolet wavelengths permits sub-100 nm spatial resolution; (c) the de-magnification factor can be continuously adjusted, that is, continuously scaled; (d) the patterning is the effect of the collective diffraction of numerous tiled units that constitute the periodic array, giving rise to error resistance such that a defect in one unit is averaged over the area of the mask and the print does not show any defects; (e) the Talbot mask does not wear out since the method is non-contact; and (f) the feature sizes on the mask do not have to be as small as the feature sizes desired on the target, are described. The apparatus includes a source of coherent radiation having a chosen wavelength directed onto a focusing optic, the reflected converging light passing through a Talbot mask and impinging on a target substrate.

Abstract: An immersion liquid confinement apparatus recovers an immersion liquid from an immersion area that includes a gap between a projection system and an object of exposure in an immersion lithography system. The apparatus includes a confinement member that includes an outlet and an aperture through which a patterned image is projected onto the object. A first liquid-permeable member covers the outlet and has a first surface that faces the object and a second surface opposite the first surface, the second surface contacting a first chamber. A second liquid-permeable member has first and second oppositely-facing surfaces, the first surface of the second liquid-permeable member contacts the first chamber, the second surface of the second liquid-permeable member contacts a second chamber that is different from the first chamber. A hydrophobic porous member is provided between the first chamber and a vacuum system that supplies a low pressure to the first chamber.

Abstract: An exposure apparatus for exposing a substrate to a light comprises a projection optical system including an optical element and configured to project a light from an original onto the substrate, an adjusting device configured to adjust at least one of a position, an orientation and a shape of the optical element, and a controller configured to obtain an adjusting amount of the optical element based on a value of an objective function relating to an optical characteristic of the projection optical system, and to control the adjusting device based on the obtained adjusting amount. The objective function includes a variable which represents an upper limit of the adjusting amount.

Abstract: In a method for multiply exposing at least one substrate coated with a photosensitive layer, a first exposure is carried out in accordance with a first set of exposure parameters on a first projection system (17), and a second exposure is carried out in accordance with a second set of exposure parameters on a second projection system (18) spatially separated from the first projection system (17). The projection systems are integrated in a common projection exposure installation (1). The first exposure can be carried out, for example, with an amplitude mask (6), the second exposure with a phase mask (9). The use of a number of projection systems enables multiple exposure that is performed in parallel and is therefore timesaving.

Abstract: An immersion lithographic apparatus is provided in which a maximum permissible velocity of the substrate relative to a fluid confinement structure that controls the immersion fluid is determined based on a property of the substrate to be exposed and, during the exposure process, the velocity of the substrate relative to the fluid confinement structure is limited to be below this maximum permissible velocity.

Abstract: The present invention provides an exposure apparatus including a projection optical system configured to project a pattern of a reticle located on an object plane onto a substrate located on an image plane, a phase shift type mark mounted on a stage which holds the substrate, an image sensor which is set at one of a position of the object plane and a position optically conjugate to the object plane, and is configured to capture an image of the mark via the projection optical system, and a controller configured to control the stage based on an interval between edge images, formed by a pair of edge portions, in the image of the mark captured by the image sensor.

Abstract: A method for reducing the effects of lens heating of a lens in an imaging process includes determining heat load locations on the lens according to an illumination source and a reticle design, obtaining a lens response characterization according to the heat load locations, and utilizing the heat load locations and the lens response characterization to generate a lens heating sensitivity map.

Abstract: A scanning exposure apparatus measures levels of a substrate at a predetermined position on the substrate at a first measurement point during the acceleration period and a second measurement point during the constant velocity period, obtains a correction value for a measurement error due to factors associated with acceleration based on the measurement results, corrects the measured level using the obtained correction value and exposes the substrate so that the level at a given position on the substrate becomes equal to the corrected level, when the substrate is exposed at the given position after the level is measured while the stage accelerates, and exposes the substrate so that the level at a given position on the substrate becomes equal to the measured level measured, when the substrate is exposed after the level of the substrate at the given position is measured while the stage moves at a constant velocity.

Abstract: An exposure apparatus the present invention comprises: an illumination optical system configured to illuminate an illumination area on an original with light from a light source; a projection optical system configured to project a pattern of the original onto a substrate; a first stage configured to hold the original; a second stage configured to hold the substrate; and a controller configured to control driving of at least one of the first stage, the second stage, and an optical element which forms the projection optical system so as to reduce variations in imaging characteristics of the projection optical system, based on a dependence of a transmittance of the pattern on a position in the illumination area.

Abstract: The subject matter disclosed herein relates to determining a lithographic set point using simulations of optical proximity correction verification. In one embodiment, a computer-implemented method of determining a lithographic tool set point for a lithographic process is disclosed. The method may include: providing a model of a production lithographic process including simulations of printed shapes; analyzing the model of the production lithographic process to determine whether a set of structures on a production mask used in the production lithographic process to create the printed shapes will fail under a plurality of set points; determining an operating region of set points where the set of structures on the production mask does not fail; and establishing a set point location within the operating region based upon a set point selection function.

Abstract: A level sensor configured to measure a height level of a substrate arranged in a measurement position is disclosed. The level sensor comprises a projection unit to project multiple measurement beams on multiple measurement locations on the substrate, a detection unit to receive the measurement beams after reflection on the substrate, and a processing unit to calculate a height level on the basis of the reflected measurement beams received by the detection unit, wherein the projection unit and the detection unit are arranged next to the substrate, when the substrate is arranged in the measurement position.

Abstract: An exposure method includes: exposing, with a photomask including a shot pattern including chip patterns arranged therein, a plurality of the shot patterns onto a wafer as a first pattern; aligning the photomask on the water so that a first region of the shot pattern overlaps the first pattern, a second region other than the first region of the shot pattern is outside the first pattern, and chip patterns are continuously arranged in the first pattern and the second region; adjusting focus on the water, with the photomask having been aligned on the wafer; and shielding the first region from light and exposing a pattern of the second region onto the wafer as a second pattern.

Abstract: For the use in illumination systems and projection exposure apparatuses for UV or EUV lithography, a reflective optical element is provided for a operating wavelength in the ultraviolet to extreme ultraviolet wavelength ranges. The reflective optical element includes a substrate and a reflective surface on the substrate. The multilayer system has layers of at least two alternating materials having different real parts of the refractive index at the operating wavelength. Radiation in the operating wavelength of a certain incident angle bandwidth distribution can impinge on the reflective optical element. The reflective surface includes one or more first portions, in which the layers have alternating materials of a first period thickness. The reflective surface includes one or more additional portions, in which the layers of alternating materials have a first period thickness and at least one additional period thickness.

Abstract: An imaging optical system has a plurality of mirrors, which via a beam path for imaging light, image an object field in an object plane into an image field in an image plane. The imaging optical system has an exit pupil obscuration. At least one of the mirrors has no opening for passage of the imaging light. The fourth to last mirror in the beam path is concave, resulting in an imaging optical system having improved imaging properties without compromise in throughput.

Abstract: An actuator according to example embodiments may be relatively compact and may be driven with 2 degrees of freedom with less spatial constraints. The actuator may include a base member, a ball screw member including a ball screw coupled to the base member and a ball nut screwed onto the ball screw, a driving member coupled to the ball nut so as to move in conjunction with the ball nut, a first directional displacement member configured to move in a first direction in response to a first movement of the driving member, a wedge member coupled to the driving member so as to be moved in a second direction in response to a second movement of the driving member, a second directional displacement member configured to move in a second direction in conjunction with the wedge member, and a binding member configured to bind the first directional displacement member to at least one of the driving member, the wedge member, and the base member.

Abstract: The present invention provides a measurement apparatus which measures a height of a test surface, the apparatus including an image sensing device including a plurality of detection units configured to detect interfering light formed by measurement light from the test surface and reference light from a reference surface, and an optical system configured to guide the measurement light and the reference light to the plurality of detection units, wherein the reference surface is placed such that differences are generated among optical path differences between measurement light beams and reference light beams which enter the plurality of detection units, respectively.

Abstract: An optical integrator system comprises a first optical integrator including a plurality of first wavefront dividing elements two-dimensionally juxtaposed, and a second optical integrator including a plurality of second wavefront dividing elements two-dimensionally juxtaposed. Each of the first wavefront dividing elements is so constructed that rays obliquely incident to a center on an optical axis of an entrance surface are emitted in parallel with the optical axis. Each of the second wavefront dividing elements is also so constructed that rays obliquely incident to a center on an optical axis of an entrance surface are emitted in parallel with the optical axis. The system satisfies the condition of P2/(2×tan ?)<L12.

Abstract: A lithographic apparatus includes a level sensor for use in positioning a target portion of the substrate with respect to a focal plane of the projection system, a pair of actuators, configured to move a substrate table of the lithographic apparatus, and a controller for moving the substrate relative to the level sensor by controlling the actuators. The controller combines motions of the first and second actuators to produce a combined movement having a speed higher than a maximum speed of at least one of the actuators individually.

Abstract: Methods, systems and apparatus for monitoring the state of a reticle by providing a reticle having a device exposure region in an imaging tool, defining one or more image fields across the device exposure region, and transmitting energy through the device exposure region. A detector detects the energy in the image field(s) at one or more testing intervals and a system control generates a transmission profile of average energy transmissions for each image field. Using this transmission profile, the state of the reticle is then determined at each testing interval followed by taking action based on the reticle state. The state of the reticle identifies whether the device exposure region has been deleteriously degraded, and as such, the reticle is no longer suitable for use. This is accomplished by determining if any average energy transmission of any image field across the reticle exceeds an allowable energy transmission threshold.

Abstract: A lithography projection objective (30) for focusing and imaging a pattern of a reticle onto a wafer including, from the reticle and along an optical axis: a first lens group G31 having a positive refractive power; a second lens group G32 having a positive refractive power; a third lens group G33 having a positive refractive power; and a fourth lens group G34 having a positive refractive power. These four lens groups form a 2× magnification design which has a partial field of view of not smaller than 100 mm; a wavelength band of I-line±5 nm can ensure a sufficient exposure light intensity. Moreover, the present invention also achieves, with a relatively simple structure, the demanded millimeter-level resolution as well as the correction of distortions, field curvatures, astigmatisms and chromatic aberrations in a large field.

Abstract: A method for configuring an illumination source of a lithographic apparatus is presented. The method includes dividing the illumination source into pixel groups, each pixel group including one or more illumination source points; selecting an illumination shape to expose a pattern, the illumination shape formed with at least one pixel group; iteratively calculating a lithographic metric as a result of a change of state of a pixel group in the illumination source, the change of the state of the pixel group creating a modified illumination shape; and adjusting the illumination shape based on the iterative results of calculations.

Abstract: A process for use in configuring a projection optics lithography system comprising providing a determination of pupil amplitude and phase optimization for the projection optics, for use in configuring the projection optics in accordance with the determination.

Abstract: A system and method is provided which predicts problematic areas for lithography in a circuit design, and more specifically, which uses modeling data from a modeling tool to accurately predict problematic lithographic areas. The method includes identifying surface heights of plurality of tiles of a modeled wafer, and mathematically mimicking a lithographic tool to determine best planes of focus for exposure for the plurality of tiles.

Abstract: Methods for calibrating a photolithographic system are disclosed. A cold lens contour for a reticle design and at least one hot lens contour for the reticle design are generated from which a process window is defined. Aberrations induced by a lens manipulator are characterized in a manipulator model and the process window is optimized using the manipulator model. Aberrations are characterized by identifying variations in critical dimensions caused by lens manipulation for a plurality of manipulator settings and by modeling behavior of the manipulator as a relationship between manipulator settings and aberrations. The process window may be optimized by minimizing a cost function for a set of critical locations.

Abstract: In a first process, a process A, an actually measured transfer position measured by a measurement/inspection instrument is indicated by a black circle. A targeted transfer position indicated by x in a process B is located at the same position as the black circle. Assuming that the weights in the subsequent processes are the same, a targeted transfer position Xtarget indicated by x in processes C, D and E is located at a moderate position with which the total deviation from an actual transfer position (black circle) measured by the measurement/inspection instrument in a process preceding the current process is minimized, that is, at a proper position with respect to a plurality of other processes. Accordingly, the productivity of devices can be improved.

Abstract: An exposure method includes the following processes. An autofocus scan process is performed to detect a defocused portion of a first resist film over a semiconductor wafer and to generate a detection signal that indicates the defocused portion detected. A first exposure scan process is performed while selectively blinding the first resist film, with reference to a detection signal related to the defocused portion detected.

Abstract: An immersion lithographic apparatus includes a liquid supply system member configured to contain a liquid in a space between a projection system of the lithographic apparatus and the substrate and a liquid supply system member compensator arranged to compensate an interaction between the liquid supply system member and substrate table.

Abstract: Test structures and methods for semiconductor devices, lithography systems, and lithography processes are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes using a lithography system to expose a layer of photosensitive material of a workpiece to energy through a lithography mask, the lithography mask including a plurality of first test patterns having a first phase shift and at least one plurality of second test patterns having at least one second phase shift. The layer of photosensitive material of the workpiece is developed, and features formed on the layer of photosensitive material from the plurality of first test patterns and the at least one plurality of second test patterns are measured to determine a optimal focus level or optimal dose of the lithography system for exposing the layer of photosensitive material of the workpiece.

Abstract: A system and method are used to detect parameters regarding an exposure portion or an exposure beam. The system comprising a substrate stage and a metrology stage. The substrate stage is configured to position a substrate to receive an exposure beam from an exposure portion of a lithography system. The metrology stage has a sensor system thereon that is configured to detected parameters of the exposure system or the exposure beam. In one example, the system is within a lithography system, which further comprises an illumination system, a patterning device, and a projection system. The patterning device patterns a beam of radiation from the illumination system. The projection system, which is located within the exposure portion, projects that pattered beam onto the substrate or the sensor system.

Abstract: A method for improving imaging properties of an optical system and an optical system of this type having improved imaging properties are described. The optical system can have a plurality of optical elements. In some embodiments, an optical element is positioned and/or deformed by mechanical force action and by thermal action. In certain embodiments, one optical element is positioned and/or deformed by mechanical force action and another optical element is deformed by thermal action.

Abstract: Liquid is supplied to a space between the projection system and the substrate by an inlet. In an embodiment, an overflow region removes liquid above a given level. The overflow region may be arranged above the inlet and thus the liquid may be constantly refreshed and the pressure in the liquid may remain substantially constant.

Abstract: Liquid is supplied to a space between the projection system and the substrate by an inlet. In an embodiment, an overflow region removes liquid above a given level. The overflow region may be arranged above the inlet and thus the liquid may be constantly refreshed and the pressure in the liquid may remain substantially constant.

Abstract: A projection exposure tool (10) for microlithography with a measuring apparatus (36) disposed in an optical path (28) of the projection exposure tool (10) for the locally and angularly resolved measurement of an irradiation strength distribution. The measuring apparatus (36) includes a measuring field with an arrangement (56) of focusing optical elements (42) disposed at respective individual points of the measuring field (41), a common image plane (44) for the focusing optical elements (42), a locally resolving radiation detector (46) with a recording surface (48) for the locally resolved recording of a radiation intensity, the recording surface (48) being disposed in the common image plane (44), and the radiation detector outputting radiation intensity signals for a plurality of angle values indicative of a respective angularly resolved irradiation strength distribution for at least one of the individual measuring field points.

Abstract: An optical imaging device, in particular for microlithography, including an imaging unit adapted to image an object point on an image point and a measurement device. The imaging unit has a first optical element group having at least one first optical element. The imaging device is adapted to participate in the imaging of the object point on the image point, and the measurement unit is adapted to determine at least one image defect occurring on the image point when the object point is imaged. The measuring device includes at least one measurement light source, one second optical element group and at least one detection unit. The measurement light source transmits at least one measurement light bundle. The second optical element group includes at least one optical reference element and one second optical element, the elements adapted to direct the at least one measurement light bundle to the at least one detection unit, to produce at least one detection signal.

Abstract: A measuring apparatus which measures a substrate on which a mark formed with a resist is formed via lithography. An acquisition unit acquires information of an edge interval in an image of the mark under two different measurement conditions, and a calculation unit calculates a defocus value in the lithography based on a difference between the edge intervals of which information is acquired under the two different measurement conditions.

Abstract: A slit shaped area of a patterning device is illuminated to impart a radiation beam with a pattern in its cross-section. A projection system projects the patterned radiation beam onto a target portion of a substrate. As the radiation beam is scanned across the target portion of the substrate, a configuration of the projection system is adjusted and applies a pattern to the target portion. The adjusting may affect a magnitude of an image magnification component of the projection system, along the length of the slit shaped area, or an image distortion in a scan direction. The adjusting is arranged to compensate an effect on pattern overlay accuracy of a distortion of the patterning device.

Abstract: In an embodiment, a lithographic apparatus is disclosed that includes a modulator configured to expose an exposure area of the substrate to a plurality of beams modulated according to a desired pattern and a projection system configured to project the modulated beams onto the substrate. The modulator may be moveable with respect the exposure area and/or the projection system may have an array of lenses to receive the plurality of beams, the array of lenses moveable with respect to the exposure area.

Abstract: Actuator arrangements are disclosed. An actuator arrangement can include a first fluidic-based actuator device designed to exert a first force on a first location of a body associated with the first actuator device. An actuator arrangement can also include a second fluidic-based actuator device designed to exert a second force on a second location of the body associated with the first actuator device. The distance between the first and second locations can be small. The maximum value of the second force can be less than the maximum value of the first force.

Abstract: A method of evaluating an imaging performance of a projection optical system, comprising a step of specifying a polarization change of the projection optical system, which represents a relationship between a polarization state of light impinging on the projection optical system and the polarization state of the light exiting from the projection optical system, a first calculation step of calculating a value of a parameter having a correlation with the polarization change of the projection optical system specified in the specifying step, and a second calculation step of calculating an index value representing the imaging performance in a state that the projection optical system has the polarization change specified in the specifying step, based on an amount of change in the index value representing the imaging performance upon changing the value of the parameter by a unit amount, and the value of the parameter calculated in the first calculation step.

Abstract: A method includes directing a beam of radiation along an optical axis toward a workpiece support, measuring a spectrum of the beam at a first time to obtain a first profile, measuring the spectrum of the beam at a second time to obtain a second profile, determining a spectral difference between the two profiles, and adjusting a position of the workpiece support along the optical axis based on the difference. A different aspect involves an apparatus having a workpiece support, beam directing structure that directs a beam of radiation along an optical axis toward the workpiece support, spectrum measuring structure that measures a spectrum of the beam at first and second times to obtain respective first and second profiles, processing structure that determines a difference between the two profiles, and support adjusting structure that adjusts a position of the workpiece support along the optical axis based on the difference.

Abstract: An imaging device in a projection exposure machine for microlithography has at least one optical element and at least one manipulator, having a linear drive, for manipulating the position of the optical element. The linear drive has a driven subregion and a nondriven subregion, which are movable relative to one another in the direction of a movement axis. The subregions are interconnected at least temporarily via functional elements with an active axis and via functional elements with an active direction at least approximately parallel to the movement axis.

Abstract: An immersion lithographic apparatus is described with a drain configured to remove liquid from a gap between an edge of the substrate and the substrate table on which the substrate is supported. The drain is provided with a means to provide liquid to the drain irrespective of the position of the substrate table and/or a means to saturate gas within the drain. Those measures reduce the variations in heat load due to evaporation of liquid in the drain.

Abstract: An apparatus and method are used to form patterns on a substrate. The apparatus comprises a projection system, a patterning device, a low-pass filter, and a data manipulation device. The projection system projects a beam of radiation onto the substrate as an array of sub-beams. The patterning device modulates the sub-beams to substantially produce a requested dose pattern on the substrate. The low-pass filter operates on pattern data derived from the requested dose pattern in order to form a frequency-clipped target dose pattern that comprises only spatial frequency components below a selected threshold frequency. The data manipulation device produces a control signal comprising spot exposure intensities to be produced by the patterning device, based on a direct algebraic least-squares fit of the spot exposure intensities to the frequency-clipped target dose pattern. In various examples, filters can also be used.

Abstract: A fluid handling structure and lithographic apparatus is disclosed in which measures are taken, in particular to the dimensions and spacing of an array of openings in a bottom surface of the fluid handling structure, to deal with and/or prevent formation of bubbles in immersion liquid.

Abstract: Disclosed is a lithography system. The lithography system includes a radiation source for providing radiation energy; a reticle stage configured to hold a reticle; an imaging lens module configured to direct the radiation energy onto a substrate to form an image of the reticle; and a leveling sensor configured to receive a leveling signal from an exposure field of the reticle secured on the reticle stage.

Abstract: An exposure method comprises a calculation step of calculating a correction amount of a correction unit which corrects a change in imaging characteristics of a projection optical system based on at least one of parameters including a numerical aperture and effective light source of an illumination optical system, a numerical aperture of the projection optical system, and a size and pitch of a pattern, and an amount of change in environment condition in the projection optical system; and a correction step of making the correction unit operate in accordance with the correction amount calculated in the calculation step.

Abstract: An apparatus for forming fine patterns by employing polarization interference in a laser scanning method comprises a laser generator; a calcite wave plate configured to refract at least one of the S wave and the P wave, polarized by the polarization plate, an analyzer configured to make coincident with each other the polarization directions of the S wave and the P wave having the paths spaced apart from each other by the calcite wave plate; an exposure lens; an exposure head; an X stage; and a rotation stage configured to move the substrate mounting unit around a Z axis which is a vertical axis.

Abstract: A technique for determining a full-field Mask Error Enhancement Function (MEEF) associated with a mask pattern for use in a photo-lithographic process is described. In this technique, simulated wafer patterns corresponding to the mask pattern are generated at an image plane in an optical path associated with the photo-lithographic process. Then, the full-field MEEF is determined. This full-field MEEF includes MEEF values in multiple directions at positions along one or more contours that define boundaries of one or more features in the one or more simulated wafer patterns. Moreover, at least one of the MEEF values is at a position on a contour where a critical dimension for a feature associated with the contour is undefined.

Abstract: An exposure apparatus includes an illumination system which illuminates an original, a projection optical system which projects a pattern of the original onto a substrate, a measurement device configured to measure optical characteristics of at least one of the illumination system or the projection optical system, and a control unit configured to correct, the measurement results obtained by the measurement device, depending on a polarization state included in illumination light from the illumination system.