Abstract: An exposure apparatus exposes a substrate with an exposure light through an exposure liquid. The exposure apparatus includes an optical element from which the exposure light exits; a stage which is movable on the light-exit side of the optical element; a certain member which is provided on the stage; and a vibration generator which vibrates the certain member to apply vibration to the liquid in the liquid immersion space formed on the certain member. It is possible to suppress the deterioration of the performance which would be otherwise caused by any contamination.

Abstract: A method that includes conditioning a radiation beam, imparting the radiation beam with a pattern to form a patterned radiation beam by a reticle having a pattern image area and a reticle mark, and projecting the patterned radiation beam onto a target portion of a substrate by a projection system. The method further includes illuminating the reticle mark by the radiation beam for generating an aerial image of the reticle, projecting the aerial image on an image sensor, collecting image data from the image sensor, obtaining from the image data positional parameters of the aerial image, and correcting any deviation of the positional parameters from a required position of the aerial image by compensating an illumination induced thermal expansion of the reticle by an estimated correction of magnification settings of the projection system, the estimated correction being calculated from a prediction of the temporal thermal expansion of the reticle.

Abstract: Several embodiments of photolithography devices and associated methods of focal calibration are disclosed herein. In one embodiment, a method for determining a focus shift in a photolithography system include placing a microelectronic substrate on a substrate support of the photolithography system and producing first and second refraction patterns on the photoresist layer corresponding to first and second grating patterns, respectively, of a single reticle by illuminating the first and second grating patterns with an asymmetric monopole source perpendicular to the first and second grating patterns. The method further includes measuring an image shift between the first and second refraction patterns on the photoresist layer and determining a defocus shift of the illumination source based on the image shift.

Abstract: A measurement apparatus which measures spatial coherence in an illuminated plane illuminated by an illumination system, comprises a measurement mask which has at least three pinholes and is arranged on the illuminated plane, a detector configured to detect an interference pattern formed by lights from the at least three pinholes, and a calculator configured to calculate the spatial coherence in the illuminated plane based on a Fourier spectrum obtained by Fourier-transforming the interference pattern detected by the detector.

Abstract: The present invention provides a processing apparatus which executes sampling of data and represents the sampled data by linear combination of orthogonal functions, the apparatus including a device configured to execute the sampling, and a processor configured to process the data sampled by the device, wherein the processor is configured, if the data sampled by the device includes an invalid sampling point, to obtain a degree of break of orthogonality of an orthogonal function system caused by the invalid sampling point, and to evaluate reliability of the sampling based on the obtained degree.

Abstract: An immersion lithography apparatus includes a liquid supply system configured to supply a liquid to a space through which a beam of radiation passes, the liquid having an optical property that can be tuned by a tuner. The space may be located between the projection system and the substrate. The tuner is arranged to adjust one or more properties of the liquid such as the shape, composition, refractive index and/or absorptivity as a function of space and/or time in order to change the imaging performance of the lithography apparatus.

Abstract: An imaging microoptics, which is compact and robust, includes at least one aspherical member and has a folded beam path. The imaging microoptics provides a magnification |??| of >800 by magnitude. Furthermore, a system for positioning a wafer with respect to a projection optics includes the imaging microoptics, an image sensor positionable in the image plane of the imaging microoptics, for measuring a position of an aerial image of the projection optics, and a wafer stage with an actuator and a controller for positioning the wafer in dependence of an output signal of the image sensor.

Abstract: A dummy light-exposed substrate used for dummy light-exposure in an immersion exposure apparatus which exposes a substrate to light via a projection optical system and a liquid, comprises a lyophilic region, and a liquid repellent region surrounding the lyophilic region.

Abstract: An exposure method capable of performing accurate exposure without using a large photomask. The exposure method performs exposure while relatively moving a photomask above a substrate and includes a step of performing position correction of the photomask by performing, on a front side of the photomask relatively moved in a moving direction, image recognition of a pattern prearranged on the substrate such as a line and a black matrix and by correcting deviation of the photomask with respect to the pattern, and a step of checking the position correction of the photomask by performing image recognition of a reference mark arranged on the photomask and by determining whether or not the position correction of the photomask is accurately performed in the step of performing the position correction of the photomask.

Abstract: The disclosure relates to a microlithography projection exposure system having optical corrective elements configured to modify the imaging characteristics, as well as related systems and components.

Abstract: A lithography process window analyzing method for setting a process window based on ranges of exposure amounts and focus positions, and giving evaluation of reliability of the set process window, includes setting, based on a plurality of process conditions including exposure amounts and focus positions in the performed exposure processing, analysis reliability M for process conditions including an arbitrary exposure amount and an arbitrary focus position; calculating reliability R of the process window based on the analysis reliability M concerning the process conditions included in the process window; and comparing a magnitude relation between the reliability R and a predetermined threshold and determining presence or absence of reliability of the process window according to a result of the comparison.

Abstract: A method of defining patterns in a small pitch is described. A substrate having a target layer thereon is provided, and two laterally separate reflective structures with two opposite sidewalls are formed over the target layer. A photoresist layer is formed over the target layer between the two opposite sidewalls. An exposure step is performed allowing light to be reflected by the two opposite sidewalls in the lateral direction, wherein the two opposite sidewalls are spaced by a distance to cause the reflected light to produce a periodical intensity distribution in the photoresist layer in the lateral direction.

Abstract: An alignment unit includes a measurement unit configured to measure a coordinate of a center position of an alignment mark transferred to each layer that is located under an uppermost layer of a substrate, and a controller configured to determine a target coordinate of the center position of the alignment mark transferred to the uppermost layer of the substrate based on a result of a weighted average that is made by weighting the coordinate of the center position of the alignment mark of each layer of the substrate measured by the measurement unit using as a weight a function inversely proportional to a minimum critical dimension of the pattern of an original formed on each layer of the substrate.

Abstract: A method for monitoring a photolithography system includes defining a model of the photolithography system for modeling top and bottom critical dimension data associated with features formed by the photolithography system as a function of dose and focus. A library of model inversions is generated for different combinations of top and bottom critical dimension values. Each entry in the library specifies a dose value and a focus value associated with a particular combination of top and bottom critical dimension values. A top critical dimension measurement and a bottom critical dimension measurement of a feature formed by the photolithography system using a commanded dose parameter and a commanded focus parameter are received. The library is accessed using the top and bottom critical dimension measurements to generate values for a received dose parameter and the received focus parameter.

Abstract: A cleaning apparatus for an exposure apparatus that projects a pattern of an exposing mask onto a substrate with first light through an optical element is provided. The cleaning apparatus cleans the optical element with second light having a wavelength different from that of the first light, and includes a recording part configured to record information on exposure history of the exposure apparatus, and an information producing part configured to produce information on a cumulative irradiation light amount of the second light at each of regions in a predetermined cleaning area on the optical element, based on the information on the exposure history.

Abstract: An exposure apparatus is configured to expose a pattern of an original on a substrate by using light from a light source. The exposure apparatus includes an illumination optical system configured to illuminate the original by polarized light by using the light from the light source, and a correction unit configured to correct misalignment of the optical axis of the light from the light source and the optical axis of the illumination optical system. The correction unit includes a first lens and a deflecting member, the first lens can move in a direction perpendicular to an optical axis of the lens, and a deflecting direction of the light deflected by the deflecting member is variable.

Abstract: An exposure method includes a first exposure step of irradiating a mask, which is arranged near a plate, with exposure light and exposing a predetermined pattern formed on the mask onto a plate; and a second exposure step of irradiating a light converging pattern formation member, which is arranged near the plate and includes a plurality of light converging portions, with exposure light and exposing a light converging pattern having a predetermined shape onto the plate. At least part of the predetermined pattern exposed onto the plate in the first exposure step and at least part of the light converging pattern formed on the plate in the second exposure step overlap each other.

Abstract: In a lithographic projection apparatus, adjustment of the projection system, e.g. to compensate for lens heating effects, is performed by determining a region of interest for a given pattern and illumination arrangement, the region of interest being a non-circular region of a pupil plane of the projection system through which substantially all of the radiation of the modulated beam that contributes to formation of the image passes; obtaining a set of basis functions that are orthogonal over the region of interest; expressing the wavefront in the pupil plane in terms of the basis functions that are orthogonal over the region of interest and a set of coefficients; and determining a value of a control setting to minimize the values of the coefficients.

Abstract: A method of measuring a numerical aperture of an exposure machine is described. A control wafer having vernier marks thereon and an aberration mask having pinholes therein are provided, wherein each pinhole corresponds to a vernier mark in position. A lithography process using the exposure machine and the aberration mask is performed to the control wafer, so as to form over each vernier mark a photoresist pattern having the same shape of the illumination pattern of the light source of the exposure machine. The numerical aperture of the exposure machine is then derived from a graduation of the vernier mark corresponding to an outer edge of the photoresist pattern.

Abstract: When forming a magnified image of a mask pattern on an object with a plurality of projection optical systems, projected images of the projection optical systems are formed to be accurately continuous to enable satisfactory pattern transfer. A first projection optical system directs light beam from point a on a mask to point A on a plate and forms a magnified image of the mask on the plate. A second projection optical system directs light beam from point b on the mask to point on the plate and forms a magnified image of the mask on the plate. A first line segment linking point A and point a?, which orthogonally projects point a on the plate, and a second line segment linking point B and point b?, which orthogonally projects point b on the plate PT, overlap each other as viewed in a non-scanning direction.

Abstract: A source-collector module (SOCOMO) for generating a laser-produced plasma (LPP) that emits EUV radiation, and a grazing-incidence collector (GIC) mirror arranged relative to the LPP and having an input end and an output end. The LPP is formed using an LPP target system having a light source portion and a target portion, wherein a pulsed laser beam from the light source portion irradiates Xenon ice provided by the target portion to an irradiation location. The GIC mirror is arranged relative to the LPP to receive the EUV radiation at its input end and focus the received EUV radiation at an intermediate focus adjacent the output end. A radiation collection enhancement device having at least one funnel element may be used to increase the amount of EUV radiation provided to the intermediate focus and/or directed to a downstream illuminator. An EUV lithography system that utilizes the SOCOMO is also disclosed.

Abstract: A source-collector module (SOCOMO) for generating a laser-produced plasma (LPP) that emits EUV radiation, and a grazing-incidence collector (GIC) mirror arranged relative to the LPP and having an input end and an output end. The LPP is formed using an LPP target system having a light source portion and a target portion, wherein a pulsed laser beam from the light source portion irradiates a Sn wire provided by the target portion. The GIC mirror is arranged relative to the LPP to receive the EUV radiation at its input end and focus the received EUV radiation at an intermediate focus adjacent the output end. A radiation collection enhancement device having at least one funnel element may be used to increase the amount of EUV radiation provided to the intermediate focus and/or directed to a downstream illuminator. An EUV lithography system that utilizes the SOCOMO is also disclosed.

Abstract: An apparatus for manufacturing a semiconductor device and a method for manufacturing a semiconductor device using the apparatus may be provided. The manufacturing apparatus may include a liquid supplying portion for forming a liquid film, and a gas supplying unit that may rotate to discharge gas at a wide range of angles. The manufacturing method may include forming a shape and size of a liquid film common to the shape and size of an exposure region through adjusting the direction and pressure in which gas may be discharged to the substrate. Thus, the speed at which a substrate may be moved may be increased, and morphology differences of a substrate may be reduced.

Abstract: To detect whether a substrate is in a focal plane of an inspection apparatus, an optical focus sensor is arranged to receive a radiation beam via an objective lens. The optical focus sensor includes a splitter configured to split the radiation beam into a first sub-beam and a second sub-beam. With an aperture and a detector in the light path of each of the sub-beams it is possible to detect whether the substrate is in focus by comparing the amount of radiation received by each of the detectors.

Abstract: An exposure apparatus includes a projection optical system, which projects a pattern of a mask onto a prescribed exposure area on a substrate at a prescribed projection magnification. The optical axis center of the projection optical system is set to a position different from that of the center of the projection area onto which the pattern is projected. The exposure apparatus further includes a magnification modification device, which modifies the projection magnification of the projection optical system; a calculation device, which calculates a shift length of the center of the projection area associated with modification of the projection magnification; and a correction device, which corrects the position information of the exposure area based on the shift length of the center of the projection area.

Abstract: A method is used to determine focus of a lithographic apparatus used in a lithographic process on a substrate. The lithographic process is used to form at least two periodic structures on the substrate. Each structure has at least one feature that has an asymmetry between opposing side wall angles that varies as a different function of the focus of the lithographic apparatus on the substrate. A spectrum produced by directing a beam of radiation onto the at least two periodic structures is measured and ratios of the asymmetries are determined. The ratios and a relationship between the focus and the side wall asymmetry for each structure is used to determine the focus of the lithographic apparatus on the substrate.

Abstract: A method of optimizing lithographic processing to achieve substrate uniformity, is presented herein. In one embodiment, The method includes deriving hyper-sampled correlation information indicative of photoresist behavior for a plurality of wafer substrates processed at pre-specified target processing conditions. The derivation includes micro-exposing subfields of the substrates with a pattern, processing the substrates at the various target conditions, determining photoresist-related characteristics of the subfields (e.g., Bossung curvatures), and extracting correlation information regarding the subfield characteristics and the different target processing conditions to relate the target conditions as a function of subfield characteristics. The method then detects non-uniformities in a micro-exposed subsequent substrate processed under production-level processing conditions and exploits the correlation information to adjust the production-level conditions and achieve uniformity across the substrate.

Abstract: When a substrate stage is located in a first area, a first measurement device measures the same portion of the substrate at the plural measurement points both before and after the stage is horizontally driven. A controller calculates a first difference of the stage in the vertical direction in the first area accompanying driving of the stage horizontally, based on a first measurement result, calculates a value representing a surface shape of the substrate by subtracting the first difference from the first measurement result, calculates a second difference of the stage in the vertical direction in the second area accompanying driving of the stage horizontally by subtracting the value from a value representing a vertical position of the substrate when the stage is located in the second area, and controls a vertical position of the stage in the second area based on the second difference.

Abstract: Method and apparatus are provided for automated determination and adjustment of height and tilt of a substrate surface within a lithography system. The method includes: directing a beam of light onto the substrate surface, which reflects off the substrate surface as a reflected beam; optically splitting the reflected beam into a first reflected beam portion and a second reflected beam portion; impinging the first reflected beam portion onto a first detector plane of a first optical detector to generate intensity data, and impinging the second reflected beam portion onto a second detector plane of a second optical detector to generate intensity data, and utilizing the generated data in determining height and tilt of the substrate surface relative to a nominal writing plane of the lithography system. Responsive to the determination, focus or tilt of the system's writing beam, or position of the substrate surface within the system, is adjusted.

Abstract: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

Abstract: An imaging optical system that has liquid interposed in an optical path to the image plane to achieve a large effective image-side numerical aperture larger than, for example, 1.4, while a relatively large effective imaging region can be achieved. The imaging optical system that projects an image of a first surface onto a second surface. The optical path between the projection optical system and the second surface can be filled with liquid with a refractive index larger than 1.5, where a refractive index of gas in an optical path within the imaging optical system is 1. The imaging optical system comprises a boundary lens that can be contacted with the gas on the side of the first surface and that can be contacted with the liquid on the side of the second surface, and the boundary lens has a positive refracting power and is made of an optical material having a refractive index larger than 1.8.

Abstract: A projection lens unit, related exposure apparatus and control method are disclosed in which measurement light irradiates a semiconductor substrate after passing through lenses in the projection lens unit and reference light irradiates the semiconductor substrate without passing through the lenses in the projection lens unit are used to derive a control signal adapted to adjust the position of the semiconductor substrate under the projection lens unit.

Abstract: A method of calibrating an inspection apparatus. Obtaining a surface level measurements (LS) at respective level sensing locations LS(x,y). Determining focus settings (LPA, LPB) for exposure field regions (EFA, EFB) in accordance with surface level measurements (LSA, LSB) having level sensing locations corresponding to the respective exposure field region. Exposing exposure field regions (EFA, EFB) with focus offsets (FO1, FO2) defined with reference to the respective focus settings (LPA, LPB) to produce target patterns at respective target locations. Obtaining focus-dependent property measurements, such as Critical Dimension (CD) and/or side wall angle (SWA) of the target patterns measured using the inspection apparatus; and calibrating the inspection apparatus using the focus-dependent property measurements (CD/SWA) and the respective focus offsets (FO1, FO2). The calibration uses surface level measurements (e.g., LSB(3)) having a level sensing location (e.g.

Abstract: Provided is an exposure apparatus including a variable focusing device. The variable focusing device may include a transparent membrane that may be deformed in the presence of an electric field. The deformation of the transparent membrane may allow the focus length of a radiation beam to be modified. In an embodiment, the variable focusing device may be modulated such that a radiation beam having a first focus length is provided for a first position on an exposure target and a radiation beam having a second focus length is provided for a second position on the exposure target. A method and computer-readable medium are also provided.

Abstract: The present invention provides an exposure apparatus including an obtaining unit configured to obtain data of a first imaging position at which light from a first pattern having, as a longitudinal direction thereof, a first direction perpendicular to an optical axis of a projection optical system forms an image via the projection optical system, and data of a second imaging position at which light from a second pattern having, as a longitudinal direction thereof, a second direction which is not parallel to the first direction and is perpendicular to the optical axis forms an image via the projection optical system, when the first pattern and the second pattern are respectively placed on an object plane of the projection optical system, and a control unit configured to control a stage so that a substrate is positioned at a target position of the substrate along the optical axis.

Abstract: An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NAzoneplate=NAscanner/n and NAdetector=NAscanner/n*?, where NAzoneplate denotes a NA of the zoneplate lens, NAdetector denotes a NA of the detector, and NAscanner denotes a NA of the scanner, ? denotes an off-axis degree of the scanner, and n denotes a reduction magnification of the scanner.

Abstract: A line head includes: a positive lens system having two lenses with positive refractive power; an image-side lens array in which the image-side lens of the two lenses is arrayed in a plural number in first and second directions; an object-side lens array in which the object-side lens of the two lenses is arrayed in a plural number in the first and second directions; a light emitter array in which a plurality of light-emitting elements are arrayed on an object side of the positive lens system for the one positive lens system; and an aperture plate that forms an aperture diaphragm disposed on the object side of the positive lens system so that an image side is telecentric or approximately telecentric.

Abstract: In an exposure system and semiconductor device manufacturing method relating to the present invention, an image of spatial image mark body through a reduction projection lens is projected onto a spatial image projection plate arranged on a wafer stage by irradiating the spatial image mark body arranged on a reticle stage with an exposure light. The spatial image mark body has a plurality of spatial image marks arranged in a same plane. At projection positions of images of each spatial image mark on the spatial image projection plate, spatial image openings are equipped with differing positions in an optical axis direction of the exposure light. A focus curve with a single exposure can be obtained, without moving the wafer stage in the optical axis direction, by respective measurements of optical intensities of images of each spatial image mark through each opening thereby enabling to calculate the best focus position.

Abstract: A lithographic system includes a lithographic apparatus and a scatterometer. In an embodiment, the lithographic apparatus includes an illumination optical system arranged to illuminate a pattern and a projection optical system arranged to project an image of the pattern on to a substrate. In an embodiment, the scatterometer includes a measurement system arranged to direct a beam of radiation onto a target pattern on said substrate and to obtain an image of a pupil plane representative of radiation scattered from the target pattern. A computational arrangement represents the pupil plane by moment functions calculated from a pair of orthogonal basis function and correlates the moment function to lithographic feature parameters to build a lithographic system identification. A control arrangement uses the system identification to control subsequent lithographic processes performed by the lithographic apparatus.

Abstract: Provided is a measuring method including: transferring a measuring mark disposed on an original to a substrate at a plurality of locations; moving a substrate stage for holding the substrate so that the substrate is rotated by 90 degrees about a rotation axis parallel to an optical axis of a projection optical system; then transferring the measuring mark to the substrate at a plurality of locations so that the measuring mark overlaps the transfer region; measuring positional deviations among the transferred measuring marks and a first overlap mark in a region where the transfer regions overlap each other; and calculating at least one of a positional error of a shot on the substrate, a rotational error of the same, and an orthogonality in shot arrangement based on a result of the measurement.

Abstract: A part of a plate of a predetermined shape detachably mounted on a moving body is detected by an alignment system while the position of the moving body is measured by a measurement unit that sets a movement coordinate system of the movement body, and based on the detection results and the measurement results of the measurement unit corresponding to the detection results, position information of an outer periphery edge of the plate is obtained. Therefore, even if there are no alignment marks on the moving body for position measurement, the position of the plate, or in other words, the position of the moving body can be controlled on the movement coordinate system set by the measurement unit, based on the position information of the outer periphery edge of the plate.

Abstract: An exemplary lithography process may include: receiving a substrate having a photo-sensitive layer; providing a light source capable of causing an exposure of a portion of the photo-sensitive layer; and providing a mask capable of defining at least one pattern that is to be transferred to the photo-sensitive layer. Specifically, the substrate has a top surface on or over the photo-sensitive layer, and the mask receives an electromagnetic wave from the light source at a first surface of the mask and generates a plurality of electromagnetic components from a second surface of the mask. The lithography process may also include: providing a lens, which provides a flat surface at a bottom surface of the lens, for transferring the pattern to the photo-sensitive layer; and adjusting the distance between the flat surface of the lens and the top surface of the substrate to control the number and amount of the electro-magnetic components projected onto the photo-sensitive layer.

Abstract: A light beam collimated by illumination optics (4) from a radiation source (6) illuminates the surface of a wave front modulator (8) such as an Spatial Light Modulator (SLM) or Computer Generated Hologram photomask (CGH). The resulting wave travels via projection optics (10) to the substrate (12), passing through a projection lens assembly (14). The SLM (8) is programmed or CGH configured with a modulation pattern that is determined by the substrate (12) topography and desired pattern. The substrate topography is provided by Digital Holography (DH) surface profilometery performed by a DH microscope (18), which provides geometrical or topographical input to the CGH calculation routines (16). An arrangement for vertical or sloping surface patterning has a grating (22) superimposed onto the CGH pattern (24) to generate +1 and ?1 orders.

Abstract: An imaging apparatus (1000) includes: an imaging device (110), a lens (120), an initial focal point detecting unit (130) detecting a positional relationship between the imaging device (110) and the lens (120) to specify an initial focal point which is a focal point found when an exposure start instruction is received from a user; a shift pattern determining unit (140) determining a shift pattern of the focal point, such that the focal point in an exposure time moves from the initial focal Point, passes through both of a nearest end and a farthest end of a predetermined range of focus at least once, and returns to the initial focal point, the initial focal point being specified by the positional relationship between the imaging device (110) and the lens (120); and a shift control unit (150) moving one of the imaging device (110) and the lens (120) based on the shift pattern, such that the focal point moves from the initial focal point as soon as exposure starts, and arrives at the initial focal point again as

Abstract: A variable focal lens which does not require a reduction of a zoom factor and eliminates an origin sensor is provided. A microcomputer 15 functions as a focus adjustment section which controls a stepper motor 13 to move a focusing ring 5 for a focus adjustment. The microcomputer 15 causes the focusing ring 5 to move by a first moving distance in a first moving direction toward one of a FAR side and a NEAR side, and then to move the focusing ring 5 by a second moving distance in a second moving direction opposite to the first moving direction, and set the point where the focusing ring reaches after the movement in the second moving direction as a reference point for adjustment, and the microcomputer 15 causes the focusing ring 5 to move from the reference point for adjustment in the first moving direction within a range equal to or less than the second moving distance to carry out the focus adjustment.

Abstract: An exposure apparatus for exposing a shot region on a substrate includes a movable stage, a projection optical system, a measuring device configured to measure a position of a partial region of a surface of the substrate, and a controller configured to cause the measuring device to measure the position with respect to each of a plurality of measurement points of each of a plurality of shot regions, to determine a global shape of the surface based on the measured positions, to calculate a correction value with respect to each of the plurality of measurement points based on the determined global shape, and to move the stage based on measurement values corrected using the respective correction values corresponding to the respective measurement points.

Abstract: A projection objective for microlithography serves for imaging a pattern of a mask arranged in its object surface into an image field arranged in its image surface with a demagnifying imaging scale. It has a multiplicity of optical elements arranged along the optical axis of the projection objective, the optical elements being designed and arranged in such a way that the projection objective has an imageside numerical aperture NA>0.85 and a demagnifying imaging scale where |b|<0.05, and the planar image field having a minimum image field diameter suitable for microlithography of more than 1 mm.

Abstract: A part of a plate of a predetermined shape detachably mounted on a moving body is detected by an alignment system while the position of the moving body is measured by a measurement unit that sets a movement coordinate system of the movement body, and based on the detection results and the measurement results of the measurement unit corresponding to the detection results, position information of an outer periphery edge of the plate is obtained. Therefore, even if there are no alignment marks on the moving body for position measurement, the position of the plate, or in other words, the position of the moving body can be controlled on the movement coordinate system set by the measurement unit, based on the position information of the outer periphery edge of the plate.

Abstract: Stents and other medical devices that can have specific geometric configurations (curves, contours, tapers) and/or patterns (e.g., grooves) thereon, methods of making such medical devices, and apparatuses for making such medical devices are disclosed. Projection photolithography is used to define patterns the medical devices. The methods can form grooves, ridges, channels, holes, wells, and other geometric patterns (e.g. parallelograms such as squares, rectangles and other trapezoids; triangles, pentagons, spirals, hexagons, etc.) on the surface of both the inner and outer diameters (e.g., on both the inner and outer surfaces) of stents or other cylindrical, tubular or curved-surface medical devices, allowing the manufacture of stents having customized geometry/contours on all surfaces, which can minimize endothelial surface disruption of blood flow.

Abstract: A liquid immersion photolithography system includes an exposure system that exposes a substrate with electromagnetic radiation and includes a projection optical system that focuses the electromagnetic radiation on the substrate. A liquid supply system provides liquid flow between the projection optical system and the substrate. An optional plurality of micronozzles are arranged around the periphery of one side of the projection optical system so as to provide a substantially uniform velocity distribution of the liquid flow in an area where the substrate is being exposed.