Abstract: A scanning exposure apparatus uses a plurality of microlens arrays to project a mask exposure pattern onto a substrate. A CCD line camera detects an image on the substrate at this time, and using a first-layer pattern on the substrate as a reference pattern, detects whether or not the mask exposure pattern matches the reference pattern. In a case in which the patterns do not match, the microlens array is tilted from a direction that is parallel to the substrate, and the mask exposure pattern is made to match the reference pattern by using the microlens array to adjust the exposure area on the substrate. When the exposure pattern deviates from the reference pattern, it is thereby possible to detect the deviation during exposure and to prevent an exposure pattern misregistration, thereby enhancing the precision of the exposure pattern in an overlay exposure.

Abstract: A method for forming a liquid immersion area with a liquid on an object, includes determining a condition for forming the liquid immersion area based on affinity between the liquid and a liquid contact surface of the object, and forming the liquid immersion area under the determined condition.

Abstract: An exposure apparatus is provided that performs well a liquid supply operation for forming a liquid immersion region and a liquid recovery operation to form a liquid immersion region in a desired state, thereby allowing high exposure accuracy and high measurement accuracy. The exposure apparatus (EX) exposes a substrate (P) by irradiating exposure light (EL) onto the substrate (P) via a liquid (LQ), and includes a liquid supply mechanism (10) that has a supply port (13) capable of supplying the liquid (LQ) substantially in parallel with a surface of the substrate (P).

Abstract: An immersion liquid confinement apparatus confines an immersion liquid in an immersion area that includes a gap between a projection system and an object of exposure in an immersion lithography system. The apparatus also recovers the immersion liquid from the immersion area. The apparatus includes a confinement member and first and second liquid-permeable members. The confinement member includes an outlet and an aperture through which a patterned image is projected onto the object. The first liquid-permeable member covers the outlet and has a first surface that faces the object and a second surface opposite the first surface, the second surface contacting a first chamber. The second liquid-permeable member has first and second oppositely-facing surfaces, the first surface of the second liquid-permeable member contacts the first chamber, the second surface of the second liquid-permeable member contacts a second chamber that is different from the first chamber.

Abstract: The invention relates to a device manufacturing method comprising exposing a substrate with a patterned beam of radiation formed by a reticle mounted on a displaceable reticle stage, wherein the method comprises the steps of determining a non-linear function for approximating a height and a tilt profile of a reticle surface with respect to the reticle stage and controlling a displacement of the reticle stage during exposure of the substrate in accordance with the non-linear function. The invention further relates to a lithographic apparatus and a computer program.

Abstract: Systems and methods provide the use of a two or three plate Alvarez lens located in a field plane of a projection lens of a lithographic apparatus. The Alvarez lens can be used to modify the shape of the focal plane to match a previously determined surface topography, while at the same time the Alvarez lens can be designed to include a built-in correction for astigmatism and other residual Zernike errors that would otherwise be introduced.

Abstract: A method for improving imaging properties of an optical system and an optical system of this type having improved imaging properties are described. The optical system can have a plurality of optical elements. In some embodiments, an optical element is positioned and/or deformed by mechanical force action and by thermal action. In certain embodiments, one optical element is positioned and/or deformed by mechanical force action and another optical element is deformed by thermal action.

Abstract: A lithographic apparatus includes a projection system configured to project a patterned radiation beam onto a target portion of a substrate. The apparatus also includes a barrier member, surrounding a space between the projection system and, in use, the substrate, to define in part with the projection system a reservoir for liquid. A radially outer surface of the barrier member facing a portion of projection system and a radially outer surface of the portion of the projection system facing the barrier member each have a liquidphobic outer surface. The liquidphobic outer surface of the barrier member and/or the liquidphobic outer surface of the portion of the projection system has an inner edge that defines in part the reservoir.

Abstract: The optical element supporting device of the present invention includes a first supporting member that supports the optical element, a second supporting member that supports the first supporting member at a plurality of locations, a plate spring fastened to the first supporting member and having a plate thickness extending in the optical axis direction of the optical element, and a force supplying unit, which is provided on the first supporting member, configured to provide a force in the optical axis direction applied to the plate spring at a location different from the plurality of locations, wherein the force supplying unit elastically deforms the first supporting member by receiving the reactive force generated by the force applied to the plate spring to thereby adjust the position of the optical element.

Abstract: An exposure apparatus is provided with a nozzle member that has at least one of a supply outlet which supplies the liquid and a collection inlet which recovers the liquid. By immersing the nozzle member in cleaning liquid LK stored in container, the nozzle member is cleaned.

Abstract: A method for fabricating a semiconductor device that includes: providing a substrate prepared with a photoresist layer; providing a photomask comprising a first and a second pattern having a respective first and second pitch range; providing a composite aperture comprising a first and a second off-axis illumination aperture pattern, the first off-axis aperture pattern having a configuration that improves the process window of the first pitch range and the second off-axis aperture pattern having a configuration that improves the process window for a second pitch range; exposing the photoresist layer on the substrate with radiation from an exposure source through the composite aperture and the photomask; and developing the photoresist layer to pattern the photoresist layer.

Abstract: According to one embodiment, an illumination optical system comprises an optical integrator which forms a secondary light source on an illumination pupil plane in an illumination optical path of the illumination optical system with incidence of exposure light from a light source device thereinto; a first transmission filter arranged in an optical path of the exposure light emitted from a first surface illuminant of the secondary light source and having a transmittance characteristic varying according to angles of incidence of the exposure light; a second transmission filter arranged in an optical path of the exposure light emitted from a second surface illuminant of the secondary light source and having a transmittance characteristic varying according to the angles of incidence of the exposure light; and a rotation mechanism which rotates the first and second transmission filters so as to vary an angle of inclination thereof relative to the optical axis of the illumination optical system.

Abstract: A detection method for detecting a property of an extended pattern formed by at least one line generally extending in a first direction. The extended pattern is formed on a substrate or on a substrate table and preferably extends over a length of at least 50× the width of the line. The extended pattern is focus sensitive. The detection method includes moving the substrate table in a first direction and measuring along that first direction a property of the extended pattern. The property can be a result of a physical property of the extended pattern in a second direction perpendicular to the first direction. In a next step a calibration of the substrate table position can be derived from the measured position of the extended pattern.

Abstract: A method of structuring a photosensitive material is disclosed. The method includes illuminating a first object structure and projecting a pattern of the first object structure onto a photosensitive material such that the projected pattern of the first object structure is focussed at a first focus position with respect to the photosensitive material. The method also includes illuminating a second object structure and projecting a pattern of the second object structure onto the photosensitive material such that the projected pattern of the second object structure is focussed at a second focus position with respect to the photosensitive material. The respective patterns are projected in the same projection direction.

Abstract: A slit shaped area of a patterning device is illuminated to impart a radiation beam with a pattern in its cross-section. A projection system projects the patterned radiation beam onto a target portion of a substrate. As the radiation beam is scanned across the target portion of the substrate, a configuration of the projection system is adjusted and applies a pattern to the target portion. The adjusting may affect a magnitude of an image magnification component of the projection system, along the length of the slit shaped area, or an image distortion in a scan direction. The adjusting is arranged to compensate an effect on pattern overlay accuracy of a distortion of the patterning device.

Abstract: A method of measuring focus of a lithographic projection apparatus includes exposure of a photoresist covered test substrate with a plurality of verification fields. Each of the verification fields includes a plurality of verification markers, and the verification fields are exposed using a predetermined focus offset. After developing, an alignment offset for each of the verification markers is measured and translated into defocus data using a transposed focal curve.

Abstract: A lithographic apparatus including a radiation beam monitoring apparatus, the radiation beam monitoring apparatus including an optical element configured to generate a diffraction pattern, and an imaging detector located after the optical element and not in a focal plane of the optical element such that the imaging detector is capable of detecting a mixture of spatial coherence and divergence of the radiation beam.

Abstract: A method of increasing a depth of focus of a lithographic apparatus is disclosed. The method includes forming diffracted beams of radiation using a patterning device pattern; and transforming a phase-wavefront of a portion of the diffracted beams into a first phase-wavefront having a first focal plane for the lithographic apparatus, and a second phase-wavefront having a second, different focal plane, wherein the transforming comprises: subjecting a phase of a first portion of a first diffracted beam and a phase of a corresponding first portion of a second diffracted beam to a phase change which results in an at least partial formation of the first phase-wavefront, and subjecting a phase of a second portion of the first diffracted beam and a phase of a corresponding second portion of the second diffracted beam to a phase change which results in an at least partial formation of the second phase-wavefront.

Abstract: A barrier member is provided for use in immersion lithography. The barrier member includes an extractor assembly on a bottom surface configured to face the substrate. The extractor assembly includes a plate configured to split the space between a liquid removal device and the substrate in two such that a meniscus is formed in an upper channel between the liquid removal device and the plate and below the plate between the plate and the substrate.

Abstract: A method of exposing a substrate to a pattern using an exposure apparatus. The method includes performing an update of a parameter, necessary for processing in the exposure apparatus, through measurement, in which the measurement is performed for each update of the parameter, setting a validity period for the updated parameter, in which the validity period represents a period in which the updated parameter is valid for the processing, predicting a completion time for a next exposure processing segment to be performed by the exposure apparatus, determining whether the predicted completion time is after expiration of the validity period, in which the setting of the validity period is performed after the performing of the update and before the determining step, and causing the update of the parameter to be performed if it is determined in the determining step that the predicted completion time is after the expiration of the validity period.

Abstract: A method of setting an exposure apparatus to expose exposure sectors defined on a resist film formed on a surface of a substrate with proper values of an exposure amount and a focus value for forming a pattern having a predetermined dimension includes exposing and developing an exposure sector defined on a reference substrate by a first exposure apparatus having a first state, and imaging the same. The method exposes and develops exposure sectors defined on an inspection substrate by a second exposure apparatus having a second state where at least one of the exposure amount and the focus value is unknown, and forms and images a pattern on the inspection substrate. The method determines the proper values for the exposure amount and the focus value for the second state based on luminance of the exposure sector of reference data and luminances of the exposure sectors of inspection data.

Abstract: Clamps are disclosed for holding an optical element relative to a support. An exemplary clamp includes first and second arms and a member connecting the arms such that a portion of a mounting feature of the optical element is between the first and second arms. The first arm applies a clamping force toward a respective portion of the mounting feature, and the second arm includes a seat. The seat has at least upper and intermediate portions. The upper portion engages the respective location on the mounting feature. The intermediate portion is situated between the upper portion and the second arm and has a lateral thickness less than the lateral thickness of the upper portion. The intermediate portion exhibits elastic and plastic deformability sufficient for any moment applied by the clamp to the mounting feature to be limited to less than a designated peak moment, while maintaining substantially full engagement of the upper portion with the respective location.

Abstract: An apparatus, which scans an original and a substrate relative to light slit-shaped on the original and on the substrate, comprises an adjusting device configured to adjust a distribution of a width of the light slit-shaped, the width being a width in a scanning direction, the distribution being a distribution in a perpendicular direction perpendicular to the scanning direction, and a controller. The controller is configured to obtain information representing a relationship between a position on the substrate and a target dose, calculate a distribution of the target dose in the perpendicular direction with respect to each of the shot regions based on the relationship represented by the obtained information, and control the adjusting device so as to achieve the calculated distribution of the target dose with respect to each of the shot regions.

Abstract: There is provided an optical imaging arrangement comprising: a mask unit comprising a pattern, a substrate unit comprising a substrate, an optical projection unit comprising a group of optical element units, the optical projection unit being adapted to transfer an image of the pattern onto the substrate, a first imaging arrangement component, the first imaging arrangement component being a component of one of the optical element units, a second imaging arrangement component, the second imaging arrangement component being different from the first imaging arrangement component and being a component of one of the mask unit, the optical projection unit and the substrate unit, and a metrology arrangement. The metrology arrangement captures a spatial relationship between the first imaging arrangement component and the second imaging arrangement component. The metrology arrangement comprises a reference element, the reference element being mechanically connected directly to the first imaging arrangement component.

Abstract: A vertical cavity surface emitting laser includes a first semiconductor multilayer reflector, a resonator, and a second semiconductor multilayer reflector. The first semiconductor multilayer reflector is formed on a substrate and is configured by stacking a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index. The resonator includes an active layer formed on the first semiconductor multilayer reflector. The second semiconductor multilayer reflector is configured by stacking the high refractive index layer and the low refractive index layer. The resonator includes a pair of spacer layers disposed vertically on the active layer and a resonator extension area formed at one side of the pair of spacer layers. The resonator extension area contains a material in which an energy level with a crystal defect is higher than a general energy level without the crystal defect.

Abstract: A device manufacturing method in a lithographic apparatus includes determining a plurality of positions on a substrate. The plurality of positions on a measurement substrate are scanned in a first direction to determine a first substrate map of the substrate levels of the measurement substrate. The plurality of positions on the measurement substrate are scanned in a second direction to determine a second substrate map of the substrate levels of the measurement substrate. A difference map is produced that includes information of the difference in measurement substrate surface level using the first substrate map and the second substrate map.

Abstract: An exposure apparatus is provided which can supply and collect a liquid in a prescribed state, and that can suppress degradation of a pattern image projected onto a substrate. The exposure apparatus is provided with a nozzle member (70) having a supply outlet (12) that supplies a liquid (LQ) and a collection inlet (22) that collects a liquid (LQ), and a vibration isolating mechanism (60) that supports the nozzle member (70) and vibrationally isolates the nozzle member (70) from a lower side step part (7) of a main column (1).

Abstract: An apparatus is provided with a light-sending optical system which makes first light from a first pattern and second light from a second pattern incident to a predetermined surface to project intermediate images of the first and second patterns onto the predetermined surface respectively; a light-receiving optical system which guides the first and second light reflected on the predetermined surface, to first and second observation surfaces to form observation images of the first and second patterns, respectively; and a detecting section which detects position information of the observation images of the first and second patterns on the first and second observation surfaces respectively and which calculates a surface position of the predetermined surface, based on the position information. The light-sending optical system projects the intermediate image of the second pattern as an inverted image in a predetermined direction relative to the intermediate image of the first pattern.

Abstract: A drive system determines a combination of basic patterns (type of basic patterns to be generated and the number of pulses of each basic pattern) based on design data of patterns and pattern combination information stored in a memory. Then, based on the determined result, each micro mirror of a variable molding mask is individually controlled such that a plurality of basic patterns are sequentially generated according to each of the number of pulses, and each basic pattern generated by the variable molding mask is sequentially image-formed on a plate via a projection optical system. Thus, a pattern with a desired line width corresponding to the design data is formed at a desired position on the object with a good accuracy.

Abstract: The present invention provides a position detection apparatus including a sensor in which a plurality of regions where light from a mark formed on a substrate held by a stage is detected are arrayed in a first direction, a driving unit configured to drive the stage, a control unit configured to control the driving unit so as to drive the stage in a second direction perpendicular to a height direction of the substrate, so that the light guided from the mark to the sensor enters the plurality of regions while moving in the first direction, and to drive the stage in the height direction of the substrate, and a processing unit configured to process the signals from the sensor, wherein the processing unit determines a position of the substrate in the height direction, which exhibits a peak in a light intensity distribution in the first direction generated by the signals.

Abstract: A microlithographic projection exposure apparatus comprises a projection objective which images an object onto an image plane and has a lens with a curved surface. In the projection objective there is a liquid or solid medium which directly adjoins the curved surface over a region which is usable for imaging the object. The projection exposure apparatus also has an adjustable manipulator for reducing an image field curvature which is caused by heating of the medium during the projection operation.

Abstract: A method comprises providing a semiconductor substrate having at least one layer of a material over the substrate. A sound is applied to the substrate, such that a sound wave is reflected by a top surface of the layer of material The sound wave is detected using a sensor. A topography of the top surface is determined based on the detected sound wave. The determined topography is used to control an immersion lithography process.

Abstract: An illumination optical unit for EUV microlithography includes a first optical element having a plurality of first reflective facet elements and a second optical element having a plurality of second reflective facet elements. Each first reflective facet element from the plurality of the first reflective facet elements has a respective maximum number of different positions which defines a set—associated with the first facet element—consisting of second reflective facet elements in that the set consists of all second facet elements onto which the first facet element directs radiation in its different positions during the operation of the illumination optical unit. The plurality of second reflective facet element forms a plurality of disjoint groups, wherein each of the groups and each of the sets contain at least two second facet elements, and there are no two second facet elements of a set which belong to the same group.

Abstract: A fluid proximity sensor having one or more measurement nozzles and a reference nozzle coupled to a common chamber. Diaphragms coupled to the measurement nozzles can be sensed by optical, capacitive or inductive means so as to detect changes in pressure. In addition, the number of pressure detectors can be minimized through the use of control valves to selectively couple the nozzles to the detectors, while maintaining the required high level of topographic sensitivity. Further, the measurement nozzle dimensions can be adjusted to optimize proximity measurements in response to accuracy, speed and similar requirements.

Abstract: A semiconductor wafer may include a dummy field configured to enable overlay measurements. The enhanced dummy field may include a plurality of encoding blocs that enable OVL measurements to be made throughout the enhanced dummy field.

Abstract: A method of, and associated apparatus for, determining focus corrections for a lithographic projection apparatus. The method comprises exposing a plurality of global correction fields on a test substrate, each comprising a plurality of global correction marks, and each being exposed with a tilted focus offset across it; measuring a focus dependent characteristic for each of the plurality of global correction marks to determine interfield focus variation information; and calculating interfield focus corrections from the interfield focus variation information.

Abstract: An exposure apparatus exposes a substrate by projecting a pattern image onto the substrate through a liquid. The exposure apparatus includes a projection optical system by which the pattern image is projected onto the substrate, and a movable member which is movable relative to the projection optical system. A liquid-repellent member, at least a part of a surface of which is liquid-repellent, is provided detachably on the movable member, the liquid-repellent member being different from the substrate.

Abstract: An apparatus includes a stage configured to move a substrate, an optical system configured to project an image of a pattern on an original onto the substrate, an alignment detection system configured to detect an image of an alignment mark formed on the substrate and measure a position of the alignment mark, and a focus detection system having an index mark and configured to measure a height of the substrate by projecting an image of the index mark onto the substrate. The stage includes an alignment measurement mark and a focus measurement mark that has a positional relationship with the alignment measurement mark. The alignment detection system measures a position of the alignment measurement mark. The focus detection system measures a position of the image of the index mark by projecting the image of the index mark onto the focus measurement mark.

Abstract: According to one embodiment, an exposure control apparatus includes exposure setting unit that performs an exposure setting of setting an exposure shot as a shot that is exposed or a shot that is not exposed based on height information on a height of a substrate in the exposure shot arranged in a substrate peripheral portion, and an exposure instructing unit that outputs an exposure instruction to the shot that is exposed and an instruction to skip an exposure to the shot that is not exposed.

Abstract: Disclosed is a maskless exposure method, where it is possible to perform a more precise optical alignment using a first pattern of a maskless exposure part and a second pattern of a main reference unit, and it is also possible to reduce generation of a blur in an exposed pattern.

Abstract: Illumination devices of a microlithographic projection exposure apparatus, include a deflection device with which at least two light beams impinging on the deflection device can be variably deflected independently of one another by variation of the deflection angle in each case in such a way that each of the light beams can be directed onto at least one location in a pupil plane of the illumination device via at least two different beam paths; wherein, on the beam paths, at least one optical property of the respective light beam is influenced differently.

Abstract: A method for designing an optical device which includes a lens and a microlens array is disclosed. A point spread function (PSF) of the lens including rotationally symmetrical aberration coefficients is formulated, wherein the PSF presents various spherical spot sizes. A virtual phase mask having phase coefficients is provided and the phase coefficients are added to the PSF of the lens, such that the various spherical spot sizes are homogenized. The virtual phase mask is transformed into a polynomial function comprising high and low order aberration coefficients. A surface contour of the lens is determined according to the rotationally symmetrical aberration coefficients and the low order aberration coefficients, and a sag height of each microlens in the microlens array is determined according to the high order aberration coefficients. An optical device using the design method is also disclosed.

Abstract: A method of measuring focus of a lithographic projection apparatus includes exposure of a photoresist covered test substrate with a plurality of verification fields. Each of the verification fields includes a plurality of verification markers, and the verification fields are exposed using a predetermined focus offset. After developing, an alignment offset for each of the verification markers is measured and translated into defocus data using a transposed focal curve.

Abstract: An apparatus for removing motion blur of an image is disclosed. The apparatus includes a motion-blur-function-estimation unit that estimates the motion-blur function of an input image, an image-restoration unit that restores the input image using the estimated motion-blur function, a cost-calculation unit that calculates the blur cost of the restored image, and a control unit that determines the re-estimation of the motion-blur function depending on the calculated blur cost.

Abstract: The disclosure provides projection objectives which may be used in a microlithographic projection exposure apparatus to expose a radiation-sensitive substrate arranged in the region of an image surface of the projection objective with at least one image of a pattern of a mask arranged in the region of an object surface of the projection objective. The disclosure also provides projection exposure apparatus which include such projection objectives, as well as related components and methods.

Abstract: A method for measuring a spherical aberration amount of a projection optical system that projects an image of a pattern formed on an original plate onto a substrate, includes: obtaining a first focal position in a direction of an optical axis of the projection optical system under a first measurement condition; obtaining a second focal position in the direction of the optical axis of the projection optical system under a second measurement condition; calculating the spherical aberration amount of the projection optical system based on a difference between the first focal position and the second focal position. Under the first measurement condition the focal position in the direction of the optical axis with respect to the spherical aberration amount does not change; and under the second measurement condition the focal position in the direction of the optical axis with respect to the spherical aberration amount changes.

Abstract: A method for setting an illumination optical unit involves determining an actual value of an intensity-weighted illumination parameter of the illumination optical unit for multiple field points and for multiple illumination angles. The influence of a deformation of at least one of the optical surfaces of the illumination optical unit on the at least one illumination parameter is then determined. A desired value of the illumination parameter is then predefined. A desired form of the at least one optical surface is determined so that the actual value of the illumination parameter corresponds to the desired value of the illumination parameter within predefined limits. Finally, the optical surface is deformed with the aid of at least one actuator so that an actual form of the optical surface corresponds to the desired form.

Abstract: A lithographic arrangement allows for controlling radiation characteristics. An illumination system provides a beam of radiation from radiation provided by a radiation source. The radiation source includes an array of individually controllable elements, each individually controllable element being capable of emitting radiation. A support structure supports a patterning device. The patterning device imparts the radiation beam with a pattern. A projection system projects the patterned radiation beam onto a target portion of a substrate held by a substrate table. A radiation peak intensity detection apparatus detects a peak in the intensity of an emission spectrum of one or more of the individually controllable elements of the radiation source.

Abstract: A micromirror of a micromirror array in an illumination system of a microlithographic projection exposure apparatus can be tilted through a respective tilt angle about two tilt axes. The micromirror is assigned three actuators which can respectively be driven by control signals in order to tilt the micromirror about the two tilt axes. Two control variables are specified, each of which is assigned to one tilt axis and which are both assigned to unperturbed tilt angles. For any desired combinations of the two control variables, as a function of the two control variables, one of the three actuators is selected and its control signal is set to a constant value, in particular zero. The control signals are determined so that, when the control signals are applied to the other two actuators, the micromirror adopts the unperturbed tilt angles as a function of the two control variables.

Abstract: A method for measuring a spherical aberration or a coma aberration of a projection optical system of an exposure apparatus configured to transfer an image of a pattern formed on an original plate onto a substrate through the projection optical system. The method for measuring the spherical aberration includes obtaining a focal position of the projection optical system under a first measurement condition, obtaining a focal position of the projection optical system under a second measurement condition different from the first measurement condition, and measuring the spherical aberration of the projection optical system based on a difference of the focal position obtained under the first and the second measurement conditions.