Semiconductor Patents (Class 372/43.01)
  • Patent number: 9482691
    Abstract: A new active optical Atomic Force Microscopy (AFM) probe integrating monolithically a semiconductor laser source, an AFM tip, and a photodetector into a robust, easy-to use single semiconductor chip to enable both conventional AFM measurements and optical imaging and spectroscopy at the nanoscale.
    Type: Grant
    Filed: January 8, 2016
    Date of Patent: November 1, 2016
    Assignee: ACTOPROBE, LLC
    Inventors: Alexander A. Ukhanov, Gennady A. Smolyakov
  • Patent number: 9478939
    Abstract: An embodiment is a semiconductor device comprising an optical device over a first substrate, a vertical waveguide on a top surface of the optical device, the vertical waveguide having a first refractive index, and a capping layer over the vertical waveguide, the capping layer configured to be a lens for the vertical waveguide and the capping layer having a second refractive index.
    Type: Grant
    Filed: February 26, 2015
    Date of Patent: October 25, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jui Hsieh Lai, Ying-Hao Kuo, Hai-Ching Chen, Tien-I Bao
  • Patent number: 9466949
    Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: October 11, 2016
    Assignee: SORAA LASER DIODE, INC.
    Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass, Thiago P. Melo, Mathew C. Schmidt
  • Patent number: 9438010
    Abstract: A VCSEL according to the invention, configured to emit a light having about 850 nm wavelength, comprises an active region which comprises one or more InxGa1-xAs quantum wells; two or more GaAs1-yPy barriers bonding to the one or more quantum wells; and x ranges from 0.05 to 0.1, and y ranges from 0.2 to 0.29. The VCSEL has increased optical confinement and high transmission speed, good reliability characteristics, high-temperature performance, and long life time.
    Type: Grant
    Filed: April 3, 2015
    Date of Patent: September 6, 2016
    Assignee: SAE Magnetics (H.K.) Ltd.
    Inventor: Babu Dayal Padullaparthi
  • Patent number: 9438007
    Abstract: An optical modulator including an information-containing radio frequency signal input; a semiconductor device having an optical input optically for receiving the coherent light beam, and a electrode connected to said radio frequency signal input and having a modulated bias potential so that current is generated in the second semiconductor device and extracted therefrom, while the coherent light beam is optically modulated by the signal changing the carrier density in the semiconductor device.
    Type: Grant
    Filed: June 15, 2015
    Date of Patent: September 6, 2016
    Assignee: EMCORE CORPORATION
    Inventors: Henry A. Blauvelt, Xiaoguang He, Kerry Vahala
  • Patent number: 9391424
    Abstract: This disclosure demonstrates successfully using single, polycrystalline, hot pressed ceramic, and thin film Fe doped binary chalcogenides (such as ZnSe and ZnS) as saturable absorbing passive Q-switches. The method of producing polycrystalline ZnSe(S) yields fairly uniform distribution of dopant, large coefficients of absorption (5-50 cm?1) and low passive losses while being highly cost effective and easy to reproduce. Using these Fe2+:ZnSe crystals, stable Q-switched output was achieved with a low threshold and the best cavity configuration yielded 13 mJ/pulse single mode Q-switched output and 85 mJ in a multipulse regime.
    Type: Grant
    Filed: August 26, 2014
    Date of Patent: July 12, 2016
    Assignee: THE UAB RESEARCH FOUNDATION
    Inventors: Sergey B. Mirov, Andrew Gallian, Alan Martinez, Vladimir V. Fedorov
  • Patent number: 9389379
    Abstract: A method and structure are provided for implementing a dual optical and electrical land grid array (LGA) contact. A contact for electrical and optical connection between a module and a printed circuit board (PCB) includes material providing electrical connection and an integrated material providing an optical connection; and the contact is used in a land grid array (LGA) arrangement.
    Type: Grant
    Filed: December 30, 2014
    Date of Patent: July 12, 2016
    Assignee: International Business Machines Corporation
    Inventors: Phillip V. Mann, Kevin M. O'Connell, Arvind K. Sinha, Karl Stathakis
  • Patent number: 9362714
    Abstract: A fiber amplifier system including a plurality of fiber amplifiers each receiving a fiber beam and a tapered fiber bundle (TFB) combiner including a plurality of input end fibers, a plurality of output end fibers and a center bundle portion, where each input end fiber is coupled to a separate one of the fiber amplifiers, and where the bundle portion combines all of the fiber beams into a single combined beam and each output end fiber being capable of receiving the combined beam separately from the other output end fibers. The system also includes a low non-linear delivery fiber coupled to an output end fiber of the TFB combiner and an optical output turret coupled to the delivery fiber opposite to the TFB combiner, wherein the non-linear delivery fiber is configured to reduce the effect of cross-phase modulation (XPM) instability in the delivery fiber.
    Type: Grant
    Filed: March 12, 2015
    Date of Patent: June 7, 2016
    Assignee: Northrop Grumman Systems Corporation
    Inventors: Gregory D. Goodno, Joshua E. Rothenberg, Henry H. Shields
  • Patent number: 9337612
    Abstract: A laser component includes a housing and a laser chip arranged in the housing, wherein the housing includes a first soldering contact and a second soldering contact at a first outer surface, and a third soldering contact and a fourth soldering contact at a second outer surface, the first soldering contact connects to the third soldering contact in an electrically conductive manner and the second soldering contact connects to the fourth soldering contact in an electrically conductive manner, the housing includes a carrier substrate and a cover, a bottom side of the laser chip is arranged on the carrier substrate, the cover includes an encapsulation material, the laser chip is covered by the encapsulation material, and a beam direction of the laser chip is oriented in parallel to the bottom side of the laser chip.
    Type: Grant
    Filed: July 14, 2015
    Date of Patent: May 10, 2016
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventor: Tilman Eckert
  • Patent number: 9337236
    Abstract: A light emitting device includes a substrate, light emitting cells, each of the light emitting cells including a light emitting structure including lower and upper semiconductor layers, an upper electrode, and a lower electrode, a conductive interconnection layer electrically connecting a lower electrode of a first one of the light emitting cells and an upper electrode of a second one of the light emitting cells, and a current blocking layer disposed to extend from between the upper electrode and the upper semiconductor layer, wherein each light emitting cell further includes a conductive layer arranged to electrically connect the upper electrode of the second light emitting cell to the upper semiconductor layer of the second light emitting cell.
    Type: Grant
    Filed: December 4, 2013
    Date of Patent: May 10, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Byung Yeon Choi, Myeong Soo Kim, Hee Young Beom, Yong Gyeong Lee, Hyun Seoung Ju, Gi Seok Hong
  • Patent number: 9312443
    Abstract: Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.
    Type: Grant
    Filed: October 3, 2013
    Date of Patent: April 12, 2016
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Hidehiro Taniguchi, Yutaka Ohki
  • Patent number: 9287119
    Abstract: An embodiment of an inorganic nanocomposite includes a nanoparticle phase and a matrix phase. The nanoparticle phase includes nanoparticles that are arranged in a repeating structure. In an embodiment, the nanoparticles have a spherical or pseudo-spherical shape and are incompatible with hydrazine. In another embodiment, the nanoparticles have neither a spherical nor pseudo-spherical shape. The matrix phase lies between the nanoparticles of the nanoparticle phase. An embodiment of a method of making an inorganic nanocomposite of the present invention includes forming a nanoparticle superlattice on a substrate. The nanoparticle superlattice includes nanoparticles. Each nanoparticle has organic ligands attached to a surface of the nanoparticle. The organic ligands separate adjacent nanoparticles within the nanoparticle superlattice. The method also includes forming a solution that includes an inorganic precursor.
    Type: Grant
    Filed: April 13, 2012
    Date of Patent: March 15, 2016
    Assignee: The Regents of the University of California
    Inventors: Ravisubhash Tangirala, Delia J. Milliron, Anna Llordes
  • Patent number: 9270083
    Abstract: Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.
    Type: Grant
    Filed: April 28, 2015
    Date of Patent: February 23, 2016
    Assignee: Acorn Technologies, Inc.
    Inventors: Paul A. Clifton, Andreas Goebel, R. Stockton Gaines
  • Patent number: 9269869
    Abstract: In order to provide a highly reliable silicon-germanium semiconductor optical element of high luminous efficiency or of low power consumption that can reduce or prevent the occurrence of dislocations or crystal defects on the interface between a light emitting layer or a light absorption layer and a cladding layer, in a silicon-germanium semiconductor optical element, a germanium protective layer 11 of non-light emission is disposed between a germanium light emitting layer or the light absorption layer 10 and a cladding layer 12 disposed above a substrate. The germanium protective layer 11 has the electrical conductivity different from electrical conductivity of the germanium light emitting layer or the light absorption layer 10.
    Type: Grant
    Filed: December 12, 2011
    Date of Patent: February 23, 2016
    Assignee: Hitachi, Ltd.
    Inventors: Tadashi Okumura, Shinichi Saito, Kazuki Tani, Etsuko Nomoto, Katsuya Oda
  • Patent number: 9263690
    Abstract: An organic EL device with which occurrence of leakage current between electrodes can be prevented includes: a substrate; a first electrode layer separating groove that separates a first electrode layer into small pieces; a function layer separating groove that separates a function layer into small light emitting regions; and a unit light emitting element separating groove extending from a second electrode layer to the function layer and separating the second electrode layer into small pieces. One of the small pieces of the first electrode layer, one of the small light emitting regions, and one of the small pieces of the second electrode layer structure a unit organic EL element, electrically connected in series. The average width of the unit light emitting element separating groove at the second electrode layer is wider than the average width of the unit light emitting element separating groove at the light emitting portion separating layer.
    Type: Grant
    Filed: December 20, 2012
    Date of Patent: February 16, 2016
    Assignee: KANEKA CORPORATION
    Inventors: Eiji Kuribe, Jumpei Suzuki
  • Patent number: 9231226
    Abstract: The present invention relates to a terahertz wave modulator. The terahertz wave modulator includes: a semiconductor substrate; a terahertz modulation layer including an organic-material layer disposed on the semiconductor substrate; and a first incident wave radiation unit for vertically radiating a first incident wave having a terahertz wave region onto the terahertz modulation layer. The transmitted terahertz wave may be variously modified according to the degree of crystallization of an organic material deposited on the semiconductor substrate and according to the intensity of incident light so as to maximize modulation efficiency using the modified terahertz wave. Thus, a device for modulating wavelength width, amplitude, and phase through waveform deformation in a time region may be provided.
    Type: Grant
    Filed: December 12, 2011
    Date of Patent: January 5, 2016
    Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Chul-Sik Kee, Joong-Wook Lee, Chul Kang, Kiejin Lee, Hyung Keun Yoo
  • Patent number: 9159874
    Abstract: A light emitting diode includes a conductive substrate and a light emitting structure which includes a first semiconductor layer disposed on the conductive substrate, an active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the active layer, a semi-transmissive layer which is disposed on the light emitting structure, and a hole which is defined in the light-emitting structure, and filled with a light emitting material which emits light having a color different from a color of light emitted from the active layer.
    Type: Grant
    Filed: March 28, 2014
    Date of Patent: October 13, 2015
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Young Chun Kim, Myeong Ju Shin, Jung Hoon Shin
  • Patent number: 9147624
    Abstract: A method for manufacturing a plurality of chips comprises the step of providing a wafer comprising a plurality of chip areas separated by one or more dicing lines, wherein the chip areas are arranged on a first main surface, the step of providing a laser absorption layer on a second main surface opposite to the first main surface and the step of providing a backside metal stack on the laser absorption layer. After that a laser light is applied to the laser absorption layer along the dicing lines before the chips are singulated along the dicing lines by using stealth dicing.
    Type: Grant
    Filed: June 4, 2014
    Date of Patent: September 29, 2015
    Assignee: Infineon Technologies AG
    Inventors: Gunther Mackh, Adolf Koller
  • Patent number: 9136672
    Abstract: An optical light source is provided. The optical light source includes a waveguide including two reflectors arranged spaced apart from each other to define an optical cavity therebetween, an optical gain medium, and a coupling structure arranged to couple light between the optical cavity and the optical gain medium.
    Type: Grant
    Filed: November 26, 2013
    Date of Patent: September 15, 2015
    Assignee: Agency for Science, Technology and Research
    Inventors: Xianshu Luo, Junfeng Song, Haifeng Zhou, Tsung-Yang Liow, Mingbin Yu, Patrick Guo-Qiang Lo
  • Patent number: 9099842
    Abstract: An active zone for a light emission system including a series of layers at least a portion of which consists of antimony semiconductors III-V. The layers are arranged to form at least one quantum well surrounded by barriers for generating a light emission. The active zone also includes at least one layer forming an intermediate barrier arranged relative to the quantum well to form at least two quantum sub-wells coupled with each other. A heterostructure including at least one optical confinement layer surrounding at least one active zone; a laser emission system including one heterostructure deposited onto a substrate; and the use of an active zone for emitting a light beam having a wavelength of 1.55 ?m are disclosed.
    Type: Grant
    Filed: November 26, 2010
    Date of Patent: August 4, 2015
    Assignees: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE—CNRS, UNIVERSITE DE MONTPELLIER
    Inventors: Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournie
  • Patent number: 9093819
    Abstract: Various embodiments of the present, invention are directed to surface-emitting lasers with the cavity including at least one single-layer, non-periodic, sub-wavelength grating. In one embodiment, a surface-emitting laser comprises a grating layer (112) configured with a non-periodic, sub-wavelength grating (122), a reflective layer, and a light-emitting layer (102) disposed between the grating layer and the reflector. The non-periodic, sub-wavelength grating is configured with a grating pattern that controls the shape of one or more internal cavity modes, and controls the shape of one or more external transverse modes emitted from the surface-emitting laser.
    Type: Grant
    Filed: January 29, 2010
    Date of Patent: July 28, 2015
    Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: David A. Fattal, Michael Renne Ty Tan, Raymond G. Beausoleil
  • Patent number: 9071030
    Abstract: Described herein is a novel technique used to make novel thin III-V semiconductor cleaved facet edge emitting active optical devices, such as lasers and optical amplifiers. These fully processed laser platelets with both top side and bottom side electrical contacts can be thought of as freestanding optoelectronic building blocks that can be integrated as desired on diverse substrates for a number of applications, many of which are in the field of communications. The thinness of these platelets and the precision with which their dimensions are defined using the process described herein makes it conducive to assemble them in dielectric recesses on a substrate, such as silicon, as part of an end-fire coupled, coaxial alignment optoelectronic integration strategy. This technology has been used to integrate edge emitting lasers onto silicon substrates, a significant challenge in the field of silicon optoelectronics.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: June 30, 2015
    Inventors: Joseph John Rumpler, II, Clifton Fonstad, Jr.
  • Patent number: 9072206
    Abstract: A light source device includes a light source, a holder, and a lead board. The holder has a first face to hold the light source. The lead board has a first electrode connected to the light source through a solder, a second electrode to be connected to a circuit board, a first connector connected to the second electrode, and a second connector to connect the first electrode and the first connector. The first electrode and the first connector are exposed from the first face of the holder. The second connector is unable to be exposed from the first face of the holder.
    Type: Grant
    Filed: March 10, 2010
    Date of Patent: June 30, 2015
    Assignee: DENSO CORPORATION
    Inventors: Takaaki Muramatsu, Kazumasa Kurokawa, Masaki Itoh
  • Patent number: 9065241
    Abstract: An inventive composite optical gain medium capable includes a thin-disk gain layer bonded to an index-matched cap. The gain medium's surface is shaped like a paraboloid frustum or other truncated surface of revolution. The gain medium may be cryogenically cooled and optically pumped to provide optical gain for a pulsed laser beam. Photons emitted spontaneously in the gain layer reflect off or refract through the curved surface and out of the gain medium, reducing amplified spontaneous emission (ASE). This reduces limits on stored energy and gain imposed by ASE, enabling higher average powers (e.g., 100-10,000 Watts). Operating at cryogenic temperatures reduces thermal distortion caused by thermo-mechanical surface deformations and thermo-optic index variations in the gain medium. This facilitates the use of the gain medium in an image-relayed, multi-pass architecture for smoothed extraction and further increases in peak pulse energy (e.g., to 1-100 Joules).
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: June 23, 2015
    Assignee: Massachusetts Institute of Technology
    Inventors: Luis E. Zapata, Franz X. Kaertner, Eduardo Granados Mateo, Kyung-Han Hong
  • Patent number: 9054497
    Abstract: A quantum cascade laser and method of making are disclosed. The quantum cascade laser includes a plurality stages configured in a cascade structure, each stage having a quantum well emission layer and an injection layer, each stage having an upper laser level and a lower laser level. A scattering barrier is located in the quantum well emission layer, the scattering barrier being positioned such that interface roughness (IFR) scattering at the lower laser level is greater than IFR scattering at the upper laser level. The scattering barrier may be located to maximize IFR scattering for the lower laser level and/or minimize IFR scattering for the upper laser level.
    Type: Grant
    Filed: September 21, 2012
    Date of Patent: June 9, 2015
    Assignees: The Trustees of Princeton University, The Johns Hopkins University
    Inventors: Claire Gmachl, YenTing Chiu, Yamac Dikmelik, Jacob B. Khurgin
  • Patent number: 9042418
    Abstract: Novel methods and systems for miniaturized lasers are described. A photonic crystal is bonded to a silicon-on-insulator wafer. The photonic crystal includes air-holes and can include a waveguide which couples the laser output to a silicon waveguide.
    Type: Grant
    Filed: December 23, 2013
    Date of Patent: May 26, 2015
    Assignee: CALIFORNIA INSTITUTE OF TECHNOLOGY
    Inventors: Seheon Kim, William Dos Santos Fegadolli, Axel Scherer
  • Patent number: 9036672
    Abstract: Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.
    Type: Grant
    Filed: April 18, 2014
    Date of Patent: May 19, 2015
    Assignee: Acorn Technologies, Inc.
    Inventors: Paul A. Clifton, Andreas Goebel, R. Stockton Gaines
  • Patent number: 9031106
    Abstract: Implementing a layered hyperbolic metamaterial in a vertical cavity surface emitting laser (VCSEL) to improve thermal conductivity and thermal dissipation thereby stabilizing optical performance. Improvement in the thermal management and power is expected by replacing the distributed Bragg reflector (DBR) mirrors in the VCSEL. The layered metamaterial structure performs the dual function of the DBR and the heat spreader at the same time.
    Type: Grant
    Filed: August 7, 2014
    Date of Patent: May 12, 2015
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Yannick C. Morel, Igor I. Smolyaninov
  • Patent number: 9025630
    Abstract: A tuneable laser source includes a first confinement layer forming a Bragg reflector for a pump wave; an active layer made of non-linear semiconducting material, the refraction index of the active layer being greater than the refraction index of the first confinement layer; a second confinement layer, the refraction index of the second confinement layer being less than the refraction index of the active layer; a base with a first width; and a ribbon with a second width less than the first width. The second width is less than 10 ?m; the active layer includes at least one plane of quantum boxes capable of emitting a pump wave and the ribbon includes at least the part of the active layer including the quantum boxes plane and the second confinement layer.
    Type: Grant
    Filed: May 16, 2014
    Date of Patent: May 5, 2015
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Jean-Michel Gerard, Giuseppe Leo, Alessio Andronico, Sara Ducci
  • Patent number: 9025631
    Abstract: Provided is a high-output light-emitting device capable of emitting a light beam in a single mode. The light-emitting device includes a laminate structure body configured by laminating, in order, a first compound semiconductor layer, an active layer, and a second compound semiconductor layer on a base substrate, a second electrode, and a first electrode. The first compound semiconductor layer has a laminate structure including a first cladding layer and a first light guide layer in order from the base substrate, and the laminate structure body has a ridge stripe structure configured of the second compound semiconductor layer, the active layer, and a portion in a thickness direction of the first light guide layer. Provided that a thickness of the first light guide layer is t1, and a thickness of the portion configuring the ridge stripe structure of the first light guide layer is t1?, 6×10?7 m<t1 and 0(m)<t1??0.5·t1 are satisfied.
    Type: Grant
    Filed: September 4, 2012
    Date of Patent: May 5, 2015
    Assignee: Sony Corporation
    Inventors: Masaru Kuramoto, Rintaro Koda, Hideki Watanabe
  • Patent number: 9020005
    Abstract: A multicolor photonic crystal laser array comprises pixels of monolithically grown gain sections each with a different emission center wavelength. As an example, two-dimensional surface-emitting photonic crystal lasers comprising broad gain-bandwidth III-nitride multiple quantum well axial heterostructures were fabricated using a novel top-down nanowire fabrication method. Single-mode lasing was obtained in the blue-violet spectral region with 60 nm of tuning (or 16% of the nominal center wavelength) that was determined purely by the photonic crystal geometry. This approach can be extended to cover the entire visible spectrum.
    Type: Grant
    Filed: February 3, 2014
    Date of Patent: April 28, 2015
    Assignee: Sandia Corporation
    Inventors: Jeremy B. Wright, Igal Brener, Ganapathi S. Subramania, George T. Wang, Qiming Li
  • Patent number: 9020004
    Abstract: A ring resonator is connected to an optical amplifier. The ring resonator and optical amplifier are contained within the optical path of an optical resonator formed by a first and second reflector. The optical coupler branches part of the light conducting from the optical amplifier to the ring resonator within the optical resonator off to an output optical waveguide.
    Type: Grant
    Filed: January 14, 2014
    Date of Patent: April 28, 2015
    Assignee: Fujitsu Limited
    Inventor: Seokhwan Jeong
  • Publication number: 20150110137
    Abstract: In one aspect, semiconductor lasers are provided. A semiconductor laser described herein comprises substrate and a cavity formed on the substrate, the cavity comprising an asymmetric Mach-Zehnder (AMZ) interferometer structure positioned between two straight waveguide segments, the straight waveguide segments and first and second arms of the AMZ interferometer structure comprising epitaxial semiconductor layers, wherein the second arm of the AMZ interferometer structure has a temperature control architecture independent of the first arm.
    Type: Application
    Filed: October 17, 2013
    Publication date: April 23, 2015
    Applicant: Princeton University
    Inventors: Mei Chai Zheng, Qiang Liu, Claire F. Gmachl
  • Patent number: 9014231
    Abstract: A vertical cavity surface emitting laser (VCSEL) nanoscope is provided. The VCSEL nanoscope combines a VCSEL with a nano-scale aperture using a support member to separate the aperture from the VCSEL emission face. The resulting device is a useful near-field probe with a wide variety of applications.
    Type: Grant
    Filed: February 4, 2013
    Date of Patent: April 21, 2015
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Sonny Vo, James S. Harris, Jr.
  • Patent number: 9014229
    Abstract: A laser dazzler device and method. More specifically, embodiments of the present invention provide laser dazzling devices power by one or more green laser diodes characterized by a wavelength of about 500 nm to 540 nm. In various embodiments, laser dazzling devices according to the present invention include non-polar and/or semi-polar green laser diodes. In a specific embodiment, a single laser dazzling device includes a plurality of green laser diodes. There are other embodiments as well.
    Type: Grant
    Filed: October 8, 2014
    Date of Patent: April 21, 2015
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Paul Rudy
  • Patent number: 9014225
    Abstract: A vertical cavity surface emitting laser (VCSEL) device includes a bottom distributed Bragg reflector (DBR); a top DBR; an optical cavity with an active layer stack formed between the bottom DBR and the top DBR, arranged for generating light with a predetermined emission wavelength; a top electrode layer with a first window formed above the top DBR; and a first heat dissipation layer sandwiched between the top DBR and the top electrode layer. The VCSEL device utilizes thicker, heavily doped semiconductor contact window for efficient heat dissipation from active region. Besides heat dissipation on the top side of VCSEL device, it also increases the bandwidth of VCSEL through top DBR reflectivity changes that reduce the photon lifetime via a surface relief structure etching on the top side of VCSEL device. Further, the invented VCSEL contains adjusted Aluminum molefractions in multiple sections of top and bottom DBRs to effectively dissipate heat from active region of VCSEL.
    Type: Grant
    Filed: September 18, 2013
    Date of Patent: April 21, 2015
    Assignee: SAE Magnetics (H.K.) Ltd.
    Inventor: Babu Dayal Padullaparthi
  • Patent number: 9008138
    Abstract: A laser diode device is specified, comprising a housing having a mounting part and a laser diode chip based on a nitride compound semiconductor material in the housing on the mounting part, wherein the laser diode chip is mounted directly on the mounting part using a solder layer, and the solder layer has a thickness of greater than or equal to 3 ?m.
    Type: Grant
    Filed: April 9, 2013
    Date of Patent: April 14, 2015
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Uwe Strauss, Soenke Tautz, Alfred Lell, Clemens Vierheilig
  • Patent number: 9008140
    Abstract: A semiconductor laser includes: a p-type semiconductor substrate; a ridge having an active layer and cladding layers on the semiconductor substrate; a current blocking layer embedding side surfaces of the ridge; and an n-type contact layer on the ridge and the current blocking layer. The current blocking layer includes a first p-type layer, an n-type layer or a hole-trapping insulating semiconductor layer, a second p-type layer, a diffusion inhibiting layer, and a third p-type layer stacked, in order, from the semiconductor substrate. The n-type contact layer includes a p-type inverted region located in a portion of the n-type contact layer, in contact with the third p-type layer. Dopants in the third p-type layer diffuse into the p-type inverted region. The diffusion inhibiting layer is an undoped semiconductor material or a semi-insulating semiconductor material and inhibits dopants in the third p-type layer from being diffused into the active layer.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: April 14, 2015
    Assignee: Mitsubishi Electric Corporation
    Inventor: Naoki Nakamura
  • Publication number: 20150092806
    Abstract: Described herein are multi-segmented nanowires, nanosheets and nanobelts, and devices and methods using them for the generation of multicolor and white light.
    Type: Application
    Filed: March 14, 2013
    Publication date: April 2, 2015
    Inventors: Cun-Zheng Ning, Zhicheng Liu, Leijun Yin, Fan Fan, Hao Ning, Sunay Turdogan, Patricia L. Nichols
  • Patent number: 8995489
    Abstract: A semiconductor stack includes a semiconductor DBR (Distributed Bragg Reflector) formed on a substrate, and a resonator formed on the semiconductor DBR laminating wide-band semiconductor layers and active layers alternately. Each of the active layers includes MQWs (Multiple Quantum Wells) and two spacer layers formed one on each surface of the MQWs. The MQWs are formed by laminating barrier layers and quantum well layers alternately. There are n layers of the wide-band semiconductor layer formed, and a band gap Egm of an m-th wide-band semiconductor layer counting from the substrate and a band gap Egm-1 of an m?1-th wide-band semiconductor layer counting from the substrate satisfy Egm-1<Egm where n and m are integers greater than or equal to 2, and 1<m?n.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: March 31, 2015
    Assignee: Ricoh Company, Ltd.
    Inventor: Kei Hara
  • Patent number: 8989231
    Abstract: A disclosed surface emitting laser device includes a light emitting section having a mesa structure where a lower reflection mirror, an oscillation structure, and an upper reflection mirror are laminated on a substrate, the oscillation structure including an active layer, the upper reflection mirror including a current confined structure where an oxide surrounds a current passage region, a first dielectric film that coats the entire surface of an emitting region of the light emitting section, the transparent dielectric including a part where the refractive index is relatively high and a part where the refractive index is relatively low, and a second dielectric film that coats a peripheral part on the upper surface of the mesa structure. Further, the dielectric film includes a lower dielectric film and an upper dielectric film, and the lower dielectric film is coated with the upper dielectric film.
    Type: Grant
    Filed: June 12, 2013
    Date of Patent: March 24, 2015
    Inventors: Hiroyoshi Shouji, Shunichi Sato
  • Patent number: 8989226
    Abstract: A cooling module for fabricating a liquid-cooled semiconductor laser, a fabricating method, and a semiconductor laser fabricated from the module are provided, wherein the cooling module for a laser makes use of a liquid cooling plate provided with radiating fins to cool the semiconductor chip. After replacement of the traditional micro-channel structure with the radiating fin structure, the cooling module effectively reduces the resistance to flow of the cooling liquid, remarkably lowers the pressure decrease of the cooling liquid, makes it easier to seal the cooling liquid, provides stronger heat dissipating capability, effectively prolongs the lifetime of the semiconductor laser, and enhances the output power and reliability of the semiconductor laser, alongside the advantages of simple fabrication and low production cost.
    Type: Grant
    Filed: April 10, 2014
    Date of Patent: March 24, 2015
    Assignee: Xi'an Focuslight Technologies Co., Ltd.
    Inventor: Xingsheng Liu
  • Patent number: 8982916
    Abstract: A method for producing an externally injected gain switch laser ultrashort pulse, comprising the following steps of ultrashort light pulse signals having multi-longitudinal mode characteristic produced by the gain switch laser are inputted into an optical amplifier and then amplified; a spectral component signal selector selects a narrow spectral component signal outputted by the optical amplifier, the narrow spectral component signal is within an amplified spontaneous emission noise frequency band and its central wavelength is equal to the longitudinal mode of the gain switch laser; a route of the narrow spectral component signal is used as an external seed light and reinjected into the gain switch laser via a spectral component signal feedback loop. Therefore, the oscillation of a selected single longitudinal mode within the cavity of the gain switch laser is enhanced, thereby forming an externally light injected locking.
    Type: Grant
    Filed: August 8, 2007
    Date of Patent: March 17, 2015
    Assignee: Xi'an Institute of Optics and Precision Mechanics of Chinese Academy of Sciences
    Inventors: Jianguo Zhang, Wei Zhao, Yuanshan Liu
  • Publication number: 20150071319
    Abstract: In various embodiments, an emission source may be provided. The emission source may also include a gain medium including a halide semiconductor material. The emission source may further include a pump source configured to provide energy to the gain medium.
    Type: Application
    Filed: September 12, 2014
    Publication date: March 12, 2015
    Inventors: Guichuan Xing, Nripan Mathews, Subodh Mhaisalkar, Tze Chien Sum
  • Patent number: 8976825
    Abstract: A heat sink mount for a laser diode comprises three main components, a diode ring, a diode bed and a diode container. The diode ring comprises an inner hole that matches a metal stem part of the laser diode. The diode bed comprises a first part and a second part. The diode ring is fitted into the first part of the diode bed. The inner surface of the first part is tightly contacting the outer surface of the diode ring. The diode container comprises a part a and a part b. The diode bed is fitted into the part a of the diode container, via the gripping contact between the thread on the inner surface of the part a and the thread on the outer surface of the second part of diode bed. This heat sink mount has lower costs and higher heat dissipation efficiency.
    Type: Grant
    Filed: January 13, 2014
    Date of Patent: March 10, 2015
    Inventors: Richard Redpath, James Redpath
  • Patent number: 8976833
    Abstract: An embodiment is a semiconductor device comprising an optical device over a first substrate, a vertical waveguide on a top surface of the optical device, the vertical waveguide having a first refractive index, and a capping layer over the vertical waveguide, the capping layer configured to be a lens for the vertical waveguide and the capping layer having a second refractive index.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: March 10, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jui Hsieh Lai, Ying-Hao Kuo, Hai-Ching Chen, Tien-I Bao
  • Patent number: 8971367
    Abstract: A method of manufacturing a surface-emitting laser that allows precise alignment of the center position of a surface relief structure and that of a current confinement structure and formation of the relief structure by means of which a sufficient loss difference can be introduced between the fundamental transverse and higher order transverse mode. Removing the dielectric film on the semiconductor layers and the first-etch stop layer along the second pattern, using a second- and third-etch stop layer are conducted in single step after forming the confinement structure. The relief structure is formed by three layers including a lower, middle and upper layer, and total thickness of three layers is equal to the optical thickness of an odd multiple of ¼ wavelength (?: oscillation wavelength, n: refractive index of the semiconductor layer). The layer right under the lower layer is the second-etch stop layer and the first-etch stop layer is laid right on this etch stop layer.
    Type: Grant
    Filed: November 2, 2011
    Date of Patent: March 3, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tatsuro Uchida, Takeshi Uchida
  • Patent number: 8971369
    Abstract: A quantum cascade laser structure having a plurality of cascades each of which comprises a number of alternately arranged quantum wells and barriers of different thicknesses and heights, wherein at least one of the quantum wells and at least one of the barriers is under mechanical strain and the quantum wells and the barriers are coordinated such that the existing mechanical strains are largely compensated within one cascade, wherein each of the barriers comprise one or more barrier layers, wherein each cascade comprises a thinnest quantum well, a lowest barrier, a thickest quantum well, a highest barrier, and the highest barrier is followed by alternately arranged quantum wells and barriers.
    Type: Grant
    Filed: April 10, 2012
    Date of Patent: March 3, 2015
    Assignee: Quantiox GmbH
    Inventors: William Ted Masselink, Mykhaylo Petrovych Semtsiv
  • Patent number: 8964808
    Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).
    Type: Grant
    Filed: December 17, 2008
    Date of Patent: February 24, 2015
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
  • Patent number: 8964796
    Abstract: A semiconductor light emitting device includes a light guiding structure, a light emitting layer disposed within the light guiding structure, and a structure for discharging excess electric charge within the device. The device may be excited by an electron beam, as opposed to an optical beam, to create electron-hole pairs. The light emitting layer is configured for light generation without requiring a p-n junction, and is therefore not embedded within nor part of a p-n junction. Doping with p-type species is obviated, reducing device loss and permitting operation at a short wavelengths, such as below 300 nm. Various structures, such as a top-side cladding layer, are disclosed for discharging beam-induced charge. A single device may be operated with multiple electron beam pumps, either to enable a relatively thick active layer or to drive multiple separate active layers. Cooperatively curved end facets accommodate for possible off-axis resonance within the active region(s).
    Type: Grant
    Filed: June 18, 2013
    Date of Patent: February 24, 2015
    Assignee: Palo Alto Research Center Incorporated
    Inventors: Thomas Wunderer, John E. Northrup, Mark R. Teepe, Zhihong Yang, Christopher L. Chua, Noble M. Johnson