Abstract: The present invention is directed to a laser light source.

Abstract: In various embodiments, passivation layers are deposited on internal surfaces of cooling channels defined within heat sinks for electronic devices such as laser beam emitters, the passivation layers retarding or substantially preventing erosion and/or corrosion of the heat sinks.

Abstract: A method for production of an optoelectronic device includes fabricating a plurality of vertical emitters on a semiconductor substrate. Respective top surfaces of the emitters are bonded to a heat sink, after which the semiconductor substrate is removed below respective bottom surfaces of the emitters. Both anode and cathode contacts are attached to the bottom surfaces so as to drive the emitters to emit light from the bottom surfaces. In another embodiment, the upper surface of a semiconductor substrate is bonded to a carrier substrate having through-holes that are aligned with respective top surfaces of the emitters, after which the semiconductor substrate is removed below respective bottom surfaces of the emitters, and the respective bottom surfaces of the emitters are bonded to a heat sink.

Abstract: A method of forming a semiconductor thin film structure and a semiconductor thin film structure formed using the same is provided. A sacrificial layer is formed on a substrate and then patterned through various methods, an inorganic thin film is formed on the sacrificial layer and then the sacrificial layer is selectively removed to form a cavity defined by the substrate and the inorganic thin film on the substrate.

Abstract: A semiconductor strip laser and a semiconductor component are disclosed. In embodiments the laser includes a first semiconductor region of a first conductivity type of a semiconductor body, a second semiconductor region of a second different conductivity type of the semiconductor body, at least one active zone of the semiconductor body configured to generate laser radiation between the first and second semiconductor regions. The laser further includes a strip waveguide formed at least in the second semiconductor region and providing a one-dimensional wave guidance along a waveguide direction of the laser radiation generated in the active zone during operation, a first electric contact on the first semiconductor region, a second electric contact on the second semiconductor region and at least one heat spreader dimensionally stably connected to the semiconductor body at least up to a temperature of 220° C., and having an average thermal conductivity of at least 50 W/m·K.

Abstract: A method for fabricating a window member is provided. A transparent substrate including a transmitting region and a non-transmitting region may be prepared. A light curable adhesive layer may be disposed on the transparent substrate. A plurality of micro patterns may be disposed on the transparent substrate or the light curable adhesive layer in the non-transmitting region. The light curable adhesive layer may be cured by light irradiation. The light curable adhesive layer may include a transparent adhesive. A storage modulus of the transparent adhesive may be greater than or equal to about 103 Pa and less than about 106 Pa at room temperature before curing, and greater than or equal to about 106 Pa at room temperature after curing.

Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminum oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminum oxide, forming a first intermediate protective layer; forming a second layer of aluminum oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminum oxide, forming a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.

Abstract: In some aspects, the present disclosure is directed to, among other things, a device. The device may include a mirror with a first material and a pivoting system with a second material. The fracture toughness of the second material may be at least 20 M-Pa(m1/2). The pivoting system may be configured to pivot the mirror around an axis.

Abstract: A light emitting device includes a substrate, light emitting cells, each of the light emitting cells including a light emitting structure including lower and upper semiconductor layers, an upper electrode, and a lower electrode, a conductive interconnection layer electrically connecting a lower electrode of a first one of the light emitting cells and an upper electrode of a second one of the light emitting cells, and a current blocking layer disposed to extend from between the upper electrode and the upper semiconductor layer, wherein each light emitting cell further includes a conductive layer arranged to electrically connect the upper electrode of the second light emitting cell to the upper semiconductor layer of the second light emitting cell.

Abstract: A system includes N master oscillators to generate N master oscillator driving signals. The system includes N splitters to split each of the N master oscillator signals into M coherent signals with M being a positive integer greater than one. A modulator and fiber amplifier stage adjusts the relative phases of the M coherent signals and generates M×N amplified signals. The M×N amplified signals are aggregated into M clusters of N fibers. The system includes M spectral beam combination (SBC) modules to combine each of the M clusters. Each SBC module combines the M×N amplified signals at N wavelengths and generates M tiled output beams. Each SBC module employs a single dimensional (1D) fiber optic array to transmit one cluster of N amplified signals from the M signal clusters and generates one tiled output beam of the M tiled output beams.

Abstract: Provided is an inexpensive and compact optical transmission module having high coupling efficiency between an optical fiber and a light projecting element and/or a light receiving element. This optical transmission module includes a lead frame including an electric wiring pattern formed therein, a resin housing formed through insert-molding of the lead frame, and an electric device mounted on the lead frame and including a light projecting element for photoelectric conversion. The lead frame forms a slit positioning an optical fiber to be coupled and a reflection mirror reflecting and condensing light from the light projecting element to the optical fiber.

Abstract: A monolithically integrated optical device. The device has a gallium and nitrogen containing substrate member having a surface region configured on either a non-polar or semi-polar orientation. The device also has a first waveguide structure configured in a first direction overlying a first portion of the surface region. The device also has a second waveguide structure integrally configured with the first waveguide structure. The first direction is substantially perpendicular to the second direction.

Abstract: A quantum dot laser includes a GaAs substrate, a quantum dot active layer which has a barrier layer of GaAs and quantum dots, a GaAs waveguide core layer which is joined to the quantum dot active layer, and a lower cladding layer and an upper cladding layer which sandwich the quantum dot active layer and the GaAs waveguide core layer. The GaAs waveguide core layer extends from a front end of the quantum dot active layer and has a thickness which gradually decreases in a direction to depart from the front end of the quantum dot active layer, a refractive index of a first cladding layer is higher than a refractive index of a second cladding layer. With this structure, expansion of the optical mode diameter that is more than necessary is inhibited to prevent leakage of light, thereby obtaining sufficient optical output.

Abstract: A fiber laser having a thermal controller operatively connected to one or more fiber Bragg gratings is provided. The thermal controller does not impart much or imparts very little mechanical stress or strain to the optical fiber in which the FBGs reside because such forces can alter the FBG performance. Rather, the thermal controller utilizes a thermally conductive semi-solid or non-Newtonian fluid to submerge/suspend a portion of the optical fiber in which FBG resides. Temperature control logic controls whether a thermoelectric heater and cooler should be directed to increase or decrease its temperature. The thermoelectric heater and cooler imparts or removes thermal energy from the FBG to efficiently control its performance without the application of mechanical stress. The fiber laser having a thermal controller generally is able to increase laser output power greater than two times the amount of output power of a similarly fabricated fiber laser free of the thermal controller(s).

Abstract: A variable wavelength interference filter includes a stationary substrate, a stationary reflecting film disposed on the entire surface of the stationary substrate opposed to a movable substrate, and formed of a multilayer film, a movable reflecting film opposed to the stationary reflecting film, and a first mirror electrode disposed on the stationary reflecting film.

Abstract: The present invention is applicable to the field of fiber laser technologies. In the present invention, two fiber lasers of different bands are used as seed sources to form a dual-band fiber laser that outputs beams of two bands simultaneously, and the dual-band fiber laser is used to pump the cascaded evolving assemblies.

Abstract: A semiconductor laser oscillator is formed by laser diodes arranged two-dimensionally in fast-axis and slow-axis directions. A laser beam emitted from the semiconductor laser oscillator is incident on a homogenizer. The homogenizer condenses the laser beam onto a long-length incident region at a surface to be irradiated. The homogenizer divides the laser beam into a plurality of beams with respect to a short-axis direction of the incident region, and superimposes the plurality of divided beams at the surface to be irradiated to cause the superimposed beams to be incident on the incident region. The slow-axis direction of the semiconductor laser oscillator is inclined with respect to a long-axis direction of the incident region.

Abstract: Device for homogenizing a laser beam including a first substrate with a first lens array including a plurality of cylindrical lenses and a second substrate with a second cylindrical lens array, which is arranged in the beam path downstream of the first substrate and includes a plurality of cylindrical lenses. Exactly one of the cylindrical lenses of the second lens array is assigned to each of the cylindrical lenses of the first lens array. Center-to-center distances between the cylindrical lenses of the first lens array are greater than the center-to-center distances between the cylindrical lenses of the second lens array. A lens vertex of a central one of the cylindrical lenses of the first lens array is aligned with a lens vertex of a central one of the cylindrical lenses of the first lens array that is assigned thereto.

Abstract: A state-changeable device includes a first and a second particle arranged in proximity to each other; and a coupling material between the first and the second particle; wherein the first and the second particle are adapted to provide a charge carrier distribution such that surface plasmon polaritons (SPP) occur; the coupling material is adapted to exhibit a variable conductivity in response to a trigger signal thereby changing an electro-optical coupling between the first and the second particle; and the first and the second particle are arranged in proximity to each other such that a first SPP configuration corresponds to a first electro-optical coupling between the first and the second particle and a second SPP configuration corresponds to a second electro-optical coupling between the first and the second particle.

Abstract: Improved quantum efficiency of multiple quantum wells. In accordance with an embodiment of the present invention, an article of manufacture includes a p side for supplying holes and an n side for supplying electrons. The article of manufacture also includes a plurality of quantum well periods between the p side and the n side, each of the quantum well periods includes a quantum well layer and a barrier layer, with each of the barrier layers having a barrier height. The plurality of quantum well periods include different barrier heights.

Abstract: A number of variations may include a method that may include depositing a first layer on a first semiconductor epi layer (epitaxial layer) in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The first layer may include a first metal and a second metal. A second layer may comprise a material constructed and arranged to scavenge silicon migrating from the first semiconductor epi layer during annealing may be deposited over the first layer. The first semiconductor epi layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with silicon to form a silicide during the first annealing act.

Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.

Abstract: An OLED may include regions of a material having a refractive index less than that of the substrate, or of the organic region, allowing for emitted light in a waveguide mode to be extracted into air. These regions can be placed adjacent to the emissive regions of an OLED in a direction parallel to the electrodes. The substrate may also be given a nonstandard shape to further improve the conversion of waveguide mode and/or glass mode light to air mode. The outcoupling efficiency of such a device may be up to two to three times the efficiency of a standard OLED. Methods for fabricating such a transparent or top-emitting OLED is also provided.

Abstract: A semiconductor laser element includes: a semiconductor-layered structure including a waveguide core layer and having a distributed feedback laser portion and a distributed Bragg reflection portion, the waveguide core layer having a length continuous in an optical cavity length direction and a diffraction grating layer being disposed in vicinity of the waveguide core layer and along the waveguide core layer in the distributed feedback laser portion, and the waveguide core layer being disposed discretely and periodically to form a diffraction grating in the distributed Bragg reflection portion; and an electrode for injecting a current to the distributed feedback laser portion. The distributed feedback laser portion oscillates a laser light at a wavelength corresponding to a period of the diffraction grating layer. The diffraction grating formed by the waveguide core layer in the distributed Bragg reflection portion is set to have a stop band including the wavelength of the laser light.

Abstract: A photonic device is manufactured by: (i) providing (e.g. by inkjet printing) an aliquot of a liquid crystal (LC) material; and (ii) depositing the aliquot onto the surface of a flowable material layer to form a liquid crystal deposit, the flowable material and the LC material being substantially immiscible. The liquid crystal deposit adopts a deformed shape relative to the shape of the aliquot due to interaction with the flowable material layer. This promotes alignment of the LC material. Incorporation of a laser dye allows the photonic device to function as a laser, which can be operated above or below threshold depending on the circumstances. The photonic device can also be used as a passive device based on the photonic bandgap of the aligned LC material.

Abstract: A new active optical Atomic Force Microscopy (AFM) probe integrating monolithically a semiconductor laser source, an AFM tip, and a photodetector into a robust, easy-to use single semiconductor chip to enable both conventional AFM measurements and optical imaging and spectroscopy at the nanoscale.

Abstract: An embodiment is a semiconductor device comprising an optical device over a first substrate, a vertical waveguide on a top surface of the optical device, the vertical waveguide having a first refractive index, and a capping layer over the vertical waveguide, the capping layer configured to be a lens for the vertical waveguide and the capping layer having a second refractive index.

Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.

Abstract: A VCSEL according to the invention, configured to emit a light having about 850 nm wavelength, comprises an active region which comprises one or more InxGa1-xAs quantum wells; two or more GaAs1-yPy barriers bonding to the one or more quantum wells; and x ranges from 0.05 to 0.1, and y ranges from 0.2 to 0.29. The VCSEL has increased optical confinement and high transmission speed, good reliability characteristics, high-temperature performance, and long life time.

Abstract: An optical modulator including an information-containing radio frequency signal input; a semiconductor device having an optical input optically for receiving the coherent light beam, and a electrode connected to said radio frequency signal input and having a modulated bias potential so that current is generated in the second semiconductor device and extracted therefrom, while the coherent light beam is optically modulated by the signal changing the carrier density in the semiconductor device.

Abstract: A method and structure are provided for implementing a dual optical and electrical land grid array (LGA) contact. A contact for electrical and optical connection between a module and a printed circuit board (PCB) includes material providing electrical connection and an integrated material providing an optical connection; and the contact is used in a land grid array (LGA) arrangement.

Abstract: This disclosure demonstrates successfully using single, polycrystalline, hot pressed ceramic, and thin film Fe doped binary chalcogenides (such as ZnSe and ZnS) as saturable absorbing passive Q-switches. The method of producing polycrystalline ZnSe(S) yields fairly uniform distribution of dopant, large coefficients of absorption (5-50 cm?1) and low passive losses while being highly cost effective and easy to reproduce. Using these Fe2+:ZnSe crystals, stable Q-switched output was achieved with a low threshold and the best cavity configuration yielded 13 mJ/pulse single mode Q-switched output and 85 mJ in a multipulse regime.

Abstract: A fiber amplifier system including a plurality of fiber amplifiers each receiving a fiber beam and a tapered fiber bundle (TFB) combiner including a plurality of input end fibers, a plurality of output end fibers and a center bundle portion, where each input end fiber is coupled to a separate one of the fiber amplifiers, and where the bundle portion combines all of the fiber beams into a single combined beam and each output end fiber being capable of receiving the combined beam separately from the other output end fibers. The system also includes a low non-linear delivery fiber coupled to an output end fiber of the TFB combiner and an optical output turret coupled to the delivery fiber opposite to the TFB combiner, wherein the non-linear delivery fiber is configured to reduce the effect of cross-phase modulation (XPM) instability in the delivery fiber.

Abstract: A laser component includes a housing and a laser chip arranged in the housing, wherein the housing includes a first soldering contact and a second soldering contact at a first outer surface, and a third soldering contact and a fourth soldering contact at a second outer surface, the first soldering contact connects to the third soldering contact in an electrically conductive manner and the second soldering contact connects to the fourth soldering contact in an electrically conductive manner, the housing includes a carrier substrate and a cover, a bottom side of the laser chip is arranged on the carrier substrate, the cover includes an encapsulation material, the laser chip is covered by the encapsulation material, and a beam direction of the laser chip is oriented in parallel to the bottom side of the laser chip.

Abstract: A light emitting device includes a substrate, light emitting cells, each of the light emitting cells including a light emitting structure including lower and upper semiconductor layers, an upper electrode, and a lower electrode, a conductive interconnection layer electrically connecting a lower electrode of a first one of the light emitting cells and an upper electrode of a second one of the light emitting cells, and a current blocking layer disposed to extend from between the upper electrode and the upper semiconductor layer, wherein each light emitting cell further includes a conductive layer arranged to electrically connect the upper electrode of the second light emitting cell to the upper semiconductor layer of the second light emitting cell.

Abstract: Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.

Abstract: An embodiment of an inorganic nanocomposite includes a nanoparticle phase and a matrix phase. The nanoparticle phase includes nanoparticles that are arranged in a repeating structure. In an embodiment, the nanoparticles have a spherical or pseudo-spherical shape and are incompatible with hydrazine. In another embodiment, the nanoparticles have neither a spherical nor pseudo-spherical shape. The matrix phase lies between the nanoparticles of the nanoparticle phase. An embodiment of a method of making an inorganic nanocomposite of the present invention includes forming a nanoparticle superlattice on a substrate. The nanoparticle superlattice includes nanoparticles. Each nanoparticle has organic ligands attached to a surface of the nanoparticle. The organic ligands separate adjacent nanoparticles within the nanoparticle superlattice. The method also includes forming a solution that includes an inorganic precursor.

Abstract: In order to provide a highly reliable silicon-germanium semiconductor optical element of high luminous efficiency or of low power consumption that can reduce or prevent the occurrence of dislocations or crystal defects on the interface between a light emitting layer or a light absorption layer and a cladding layer, in a silicon-germanium semiconductor optical element, a germanium protective layer 11 of non-light emission is disposed between a germanium light emitting layer or the light absorption layer 10 and a cladding layer 12 disposed above a substrate. The germanium protective layer 11 has the electrical conductivity different from electrical conductivity of the germanium light emitting layer or the light absorption layer 10.

Abstract: Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

Abstract: An organic EL device with which occurrence of leakage current between electrodes can be prevented includes: a substrate; a first electrode layer separating groove that separates a first electrode layer into small pieces; a function layer separating groove that separates a function layer into small light emitting regions; and a unit light emitting element separating groove extending from a second electrode layer to the function layer and separating the second electrode layer into small pieces. One of the small pieces of the first electrode layer, one of the small light emitting regions, and one of the small pieces of the second electrode layer structure a unit organic EL element, electrically connected in series. The average width of the unit light emitting element separating groove at the second electrode layer is wider than the average width of the unit light emitting element separating groove at the light emitting portion separating layer.

Abstract: The present invention relates to a terahertz wave modulator. The terahertz wave modulator includes: a semiconductor substrate; a terahertz modulation layer including an organic-material layer disposed on the semiconductor substrate; and a first incident wave radiation unit for vertically radiating a first incident wave having a terahertz wave region onto the terahertz modulation layer. The transmitted terahertz wave may be variously modified according to the degree of crystallization of an organic material deposited on the semiconductor substrate and according to the intensity of incident light so as to maximize modulation efficiency using the modified terahertz wave. Thus, a device for modulating wavelength width, amplitude, and phase through waveform deformation in a time region may be provided.

Abstract: A light emitting diode includes a conductive substrate and a light emitting structure which includes a first semiconductor layer disposed on the conductive substrate, an active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the active layer, a semi-transmissive layer which is disposed on the light emitting structure, and a hole which is defined in the light-emitting structure, and filled with a light emitting material which emits light having a color different from a color of light emitted from the active layer.

Abstract: A method for manufacturing a plurality of chips comprises the step of providing a wafer comprising a plurality of chip areas separated by one or more dicing lines, wherein the chip areas are arranged on a first main surface, the step of providing a laser absorption layer on a second main surface opposite to the first main surface and the step of providing a backside metal stack on the laser absorption layer. After that a laser light is applied to the laser absorption layer along the dicing lines before the chips are singulated along the dicing lines by using stealth dicing.

Abstract: An optical light source is provided. The optical light source includes a waveguide including two reflectors arranged spaced apart from each other to define an optical cavity therebetween, an optical gain medium, and a coupling structure arranged to couple light between the optical cavity and the optical gain medium.

Abstract: An active zone for a light emission system including a series of layers at least a portion of which consists of antimony semiconductors III-V. The layers are arranged to form at least one quantum well surrounded by barriers for generating a light emission. The active zone also includes at least one layer forming an intermediate barrier arranged relative to the quantum well to form at least two quantum sub-wells coupled with each other. A heterostructure including at least one optical confinement layer surrounding at least one active zone; a laser emission system including one heterostructure deposited onto a substrate; and the use of an active zone for emitting a light beam having a wavelength of 1.55 ?m are disclosed.

Abstract: Various embodiments of the present, invention are directed to surface-emitting lasers with the cavity including at least one single-layer, non-periodic, sub-wavelength grating. In one embodiment, a surface-emitting laser comprises a grating layer (112) configured with a non-periodic, sub-wavelength grating (122), a reflective layer, and a light-emitting layer (102) disposed between the grating layer and the reflector. The non-periodic, sub-wavelength grating is configured with a grating pattern that controls the shape of one or more internal cavity modes, and controls the shape of one or more external transverse modes emitted from the surface-emitting laser.

Abstract: A light source device includes a light source, a holder, and a lead board. The holder has a first face to hold the light source. The lead board has a first electrode connected to the light source through a solder, a second electrode to be connected to a circuit board, a first connector connected to the second electrode, and a second connector to connect the first electrode and the first connector. The first electrode and the first connector are exposed from the first face of the holder. The second connector is unable to be exposed from the first face of the holder.

Abstract: Described herein is a novel technique used to make novel thin III-V semiconductor cleaved facet edge emitting active optical devices, such as lasers and optical amplifiers. These fully processed laser platelets with both top side and bottom side electrical contacts can be thought of as freestanding optoelectronic building blocks that can be integrated as desired on diverse substrates for a number of applications, many of which are in the field of communications. The thinness of these platelets and the precision with which their dimensions are defined using the process described herein makes it conducive to assemble them in dielectric recesses on a substrate, such as silicon, as part of an end-fire coupled, coaxial alignment optoelectronic integration strategy. This technology has been used to integrate edge emitting lasers onto silicon substrates, a significant challenge in the field of silicon optoelectronics.

Abstract: An inventive composite optical gain medium capable includes a thin-disk gain layer bonded to an index-matched cap. The gain medium's surface is shaped like a paraboloid frustum or other truncated surface of revolution. The gain medium may be cryogenically cooled and optically pumped to provide optical gain for a pulsed laser beam. Photons emitted spontaneously in the gain layer reflect off or refract through the curved surface and out of the gain medium, reducing amplified spontaneous emission (ASE). This reduces limits on stored energy and gain imposed by ASE, enabling higher average powers (e.g., 100-10,000 Watts). Operating at cryogenic temperatures reduces thermal distortion caused by thermo-mechanical surface deformations and thermo-optic index variations in the gain medium. This facilitates the use of the gain medium in an image-relayed, multi-pass architecture for smoothed extraction and further increases in peak pulse energy (e.g., to 1-100 Joules).

Abstract: A quantum cascade laser and method of making are disclosed. The quantum cascade laser includes a plurality stages configured in a cascade structure, each stage having a quantum well emission layer and an injection layer, each stage having an upper laser level and a lower laser level. A scattering barrier is located in the quantum well emission layer, the scattering barrier being positioned such that interface roughness (IFR) scattering at the lower laser level is greater than IFR scattering at the upper laser level. The scattering barrier may be located to maximize IFR scattering for the lower laser level and/or minimize IFR scattering for the upper laser level.