Semiconductor Patents (Class 372/43.01)
  • Patent number: 8955987
    Abstract: A light emitting device includes a substrate, a laminated body formed by stacking a first cladding layer, a first active layer, a second cladding layer, a third cladding layer, a second active layer, and a fourth cladding layer on the substrate in this order, a first electrode connected to the first cladding layer, a second electrode connected to the second cladding layer and the third cladding layer, and a third electrode connected to the fourth cladding layer, the first active layer generates first light using the first electrode and the second electrode, the second active layer generates second light using the second electrode and the third electrode, and a side surface of the first active layer is provided with an emitting section for emitting the first light, and a side surface of the second active layer is provided with an emitting section for emitting the second light.
    Type: Grant
    Filed: May 3, 2013
    Date of Patent: February 17, 2015
    Assignee: Seiko Epson Corporation
    Inventor: Masamitsu Mochizuki
  • Patent number: 8958449
    Abstract: A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate includes a p-side electrode surrounding an emitting area on an emitting surface to emit the laser light; and a transparent dielectric film formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part. The outside area within the emitting area has shape anisotropy in two mutually perpendicular directions.
    Type: Grant
    Filed: December 19, 2013
    Date of Patent: February 17, 2015
    Assignee: Ricoh Company, Ltd.
    Inventors: Kazuhiro Harasaka, Shunichi Sato, Naoto Jikutani
  • Patent number: 8958450
    Abstract: A quantum cascade laser 1 includes a semiconductor substrate, an active layer 15 that is disposed on the semiconductor substrate and has a cascade structure in which a unit layered structure 16 including a quantum well light emitting layer and an injection layer is stacked in multiples to alternately stack the quantum well light emitting layer and the injection layer, and a diffraction grating layer 20 disposed on the active layer.
    Type: Grant
    Filed: July 4, 2012
    Date of Patent: February 17, 2015
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Tadataka Edamura, Atsushi Sugiyama, Naota Akikusa
  • Publication number: 20150043319
    Abstract: An near-field light device (100) is provided with: a first electrode layer (123) having a protruding portion (123a); a second electrode layer (121); and a light emitting layer (122), the protruding portion protrudes along a predetermined direction (Y axis direction) to be capable of extracting energy which is caused by emission of light at the light emitting layer, the predetermined direction intersects with a laminated direction (X axis direction) of the near-field light device, an edge surface of at least one portion of the projection portion is located at more outward side in the optical device than an edge surface of the second electrode layer is.
    Type: Application
    Filed: August 6, 2014
    Publication date: February 12, 2015
    Inventors: Takayuki KASUYA, Satoshi SUGIURA
  • Patent number: 8947769
    Abstract: An apparatus for tunable generation of terahertz photons is provided. The apparatus comprises a three level magnon laser, an injection means, a terahertz antenna, and a tuning means. The terahertz antenna further comprises a magnon gain medium that supports generation of nonequilibrium magnons. The magnon gain medium is selected from the group consisting of: a ferromagnetic semiconductor; a dilute magnetic semiconductor (DMS); a half-metallic ferromagnet (HMF); and a ferromagnetic conductor, with a gap in the density of states of the minority electrons around the Fermi energy.
    Type: Grant
    Filed: July 12, 2011
    Date of Patent: February 3, 2015
    Assignee: Terahertz Technologies LLC
    Inventors: Yehiel Korenblit, Boris G. Tankhilevich
  • Patent number: 8937980
    Abstract: Distributed feedback-laser diodes are provided. The distributed feedback-laser diode may include a substrate, a lower cladding layer having a grating on the substrate, an active layer disposed on the lower cladding layer, a first upper cladding layer disposed on the active layer, a phase-shift region extending in a first direction on the first upper cladding layer, and a ridge waveguide layer extending in a second direction crossing the first direction on the phase-shift region.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: January 20, 2015
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Oh Kee Kwon, Su Hwan Oh, Young Ahn Leem, O-Kyun Kwon, Young-Tak Han, Yongsoon Baek, Yun C. Chung
  • Patent number: 8937981
    Abstract: A laser system can include an electrode to transmit electrical carriers into an active region in response to first electrical stimulation. The laser system can also include another electrode to transmit electrical carriers into the active region in response to second electrical stimulation. The electrical carriers can be combined in the active region to emit photons to generate an optical signal. The system can further include yet another electrode responsive to electrical stimulation to affect a concentration of electrical carriers in a device layer to change a capacitance of an internal capacitance region associated with at least one of first and second waveguide regions and the device layer. The third electrical stimulation can be modulated to modulate the optical signal based on the change to the capacitance of the internal capacitance region.
    Type: Grant
    Filed: November 1, 2011
    Date of Patent: January 20, 2015
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventor: Di Liang
  • Patent number: 8934507
    Abstract: In at least one embodiment, a wavelength-tunable light source includes at least one fiber-based partial section and at least one delay section. For a wavelength ? of at least one portion of a radiation emitted by the light source as a function of time t, the relationship ?(t)=?(t??) holds true. In this case, ? is a specific period of time. Furthermore, the delay section includes one or more oligomode fibers.
    Type: Grant
    Filed: September 16, 2010
    Date of Patent: January 13, 2015
    Assignee: Ludwig-Maximilians-Universitaet Muenchen
    Inventors: Robert Alexander Huber, Wolfgang Wieser, Thomas Klein
  • Patent number: 8934514
    Abstract: A vertical cavity surface emitting laser (VCSEL) configured to operate in a gain switching regime includes a cavity that is terminated by reflectors at both ends for enabling a standing wave of optical radiation therebetween. The cavity comprises at least one quantum well, each of the quantum wells located at a position where a value of a standing wave factor for each quantum well is between zero and one, 0<?<1.
    Type: Grant
    Filed: December 12, 2013
    Date of Patent: January 13, 2015
    Assignees: Oulun yliopisto, University of York
    Inventors: Juha Kostamovaara, Eugene A. Avrutin, Boris Ryvkin
  • Patent number: 8929415
    Abstract: Photonic crystal cavities and related devices and methods are described. The described cavities can be used as lasers, photovoltaic sources, and single photon sources. The cavities can be both optically and electrically pumped. A fabrication process of the cavities is also described.
    Type: Grant
    Filed: December 3, 2013
    Date of Patent: January 6, 2015
    Assignee: California Institute of Technology
    Inventors: Seheon Kim, Axel Scherer
  • Patent number: 8929418
    Abstract: A semiconductor laser is provided with one or more rear ports and one front port and with a multi-mode interference optical waveguide that has an active layer (light emitting layer) in all regions in plan view. The front port corresponds to an imaging point at which fundamental mode light forms an image in the active layer (light emitting layer) perpendicular to the waveguide direction of the multi-mode interference optical waveguide, and in plan view the front port is disposed along a central line, off center with respect to a central line, along the waveguide direction of the multi-mode interference optical waveguide.
    Type: Grant
    Filed: September 13, 2013
    Date of Patent: January 6, 2015
    Assignee: Kyushu University, National University Corporation
    Inventor: Kiichi Hamamoto
  • Patent number: 8923354
    Abstract: A nitride semiconductor laser comprises a conductive support base having a primary surface of gallium nitride based semiconductor, an active layer on the primary surface, and a p-type cladding region on the primary surface. The primary surface is tilted to a reference plane perpendicular to a reference axis extending in the c-axis direction of the gallium nitride based semiconductor. The p-type cladding region comprises a first p-type group III nitride semiconductor layer of an AlGaN layer anisotropically-strained, and a second p-type group III nitride semiconductor layer of material different from the AlGaN layer. The first p-type group III nitride semiconductor layer is provided between the second p-type group III nitride semiconductor layer and the active layer. The AlGaN layer has the largest bandgap in the p-type cladding region. The second p-type group III nitride semiconductor layer has a resistivity lower than the first p-type group III nitride semiconductor layer.
    Type: Grant
    Filed: October 4, 2012
    Date of Patent: December 30, 2014
    Inventors: Takashi Kyono, Yohei Enya, Takamichi Sumitomo, Yusuke Yoshizumi, Masaki Ueno, Katsunori Yanashima, Kunihiko Tasai, Hiroshi Nakajima
  • Patent number: 8917749
    Abstract: Provided is a laser diode mounting substrate for an automotive lamp module using a laser diode. The substrate includes: a substrate body with a power supply circuit pattern, which electrically connects a connector with a contact point of the laser diode, on the top; a first heat conduction layer disposed at the area except for the power supply circuit pattern, on the top of the substrate body; and a second heat conduction layer disposed on the bottom of the substrate body, in which at least one heat transfer hole is disposed through the first heat conduction layer, the substrate body, and the second heat conduction layer. Therefore, the present invention provides an effect that heat generated by the laser diode can be effectively dissipated.
    Type: Grant
    Filed: January 29, 2014
    Date of Patent: December 23, 2014
    Assignee: Hyundai Mobis Co., Ltd.
    Inventor: Tae Won Lee
  • Patent number: 8917751
    Abstract: Provided is an optical device capable of bonding each optical part to a substrate with the same applied load by surface activated bonding even if the planar shape sizes of a plurality of optical parts to be mounted on the substrate are different from one another. The optical device includes a substrate, a plurality of optical parts different in planar shape size, bonded to the substrate by surface activated bonding adjacent to one another, and optically coupled with one another, and a plurality of bonding parts provided on the substrate in correspondence to the plurality of optical parts and including metallic micro bumps for bonding each optical part. The total area of the top surfaces of the micro bumps to be bonded to the corresponding optical part of each of the plurality of bonding parts is substantially the same.
    Type: Grant
    Filed: August 24, 2013
    Date of Patent: December 23, 2014
    Assignee: Citizen Holdings Co., Ltd.
    Inventor: Kaoru Yoda
  • Patent number: 8913640
    Abstract: A semiconductor laser assembly has at least one semiconductor laser which is designed to emit laser radiation through an exit area and at least one further area, the further area being a part of a surface of the semiconductor laser and/or of the semiconductor laser assembly and the further area is developed to be reflecting to the radiation of at least one specifiable wavelength range. For this purpose, a reflecting metal layer is applied, for example. The semiconductor laser having a laser layer is able to be fastened to a carrier element with the aid of a solder layer.
    Type: Grant
    Filed: September 8, 2011
    Date of Patent: December 16, 2014
    Assignee: Robert Bosch GmbH
    Inventors: Mathias Moenster, Hans-Jochen Schwarz
  • Patent number: 8908728
    Abstract: A transistor outline package with integrated thermoelectric cooler is disclosed. The thermoelectric cooler is arranged on a heatsink which extends vertically into the housing of the transistor outline package.
    Type: Grant
    Filed: July 8, 2013
    Date of Patent: December 9, 2014
    Assignee: Schott AG
    Inventors: George Lin Huikai, Amy Soon Li Ping, Tetsushi Morikawa, Rohit Bhosale, Shaifullah Bin Mohamed Kamari
  • Patent number: 8908732
    Abstract: A group-III nitride semiconductor laser device comprises: a laser structure including a semiconductor region and a support base having a semipolar primary surface of group-III nitride semiconductor; a first reflective layer, provided on a first facet of the region, for a lasing cavity of the laser device; and a second reflective layer, provided on a second facet of the region, for the lasing cavity. The laser structure includes a laser waveguide extending along the semipolar surface. A c+ axis vector indicating a <0001> axial direction of the base tilts toward an m-axis of the group-III nitride semiconductor at an angle of not less than 63 degrees and less than 80 degrees with respect to a vector indicating a direction of an axis normal to the semipolar surface. The first reflective layer has a reflectance of less than 60% in a wavelength range of 525 to 545 nm.
    Type: Grant
    Filed: May 17, 2013
    Date of Patent: December 9, 2014
    Assignees: Sumitomo Electric Industries, Ltd., Sony Corporation
    Inventors: Masaki Ueno, Koji Katayama, Takatoshi Ikegami, Takao Nakamura, Katsunori Yanashima, Hiroshi Nakajima
  • Patent number: 8908734
    Abstract: In an embodiment, a distributed Bragg reflector (DBR) laser includes a gain section and a passive section. The gain section includes an active region, an upper separate confinement heterostructure (SCH), and a lower SCH. The upper SCH is above the active region and has a thickness of at least 60 nanometers (nm). The lower SCH is below the active region and has a thickness of at least 60 nm. The passive section is coupled to the gain section, the passive section having a DBR in optical communication with the active region.
    Type: Grant
    Filed: May 17, 2013
    Date of Patent: December 9, 2014
    Assignee: Finisar Corporation
    Inventor: Yasuhiro Matsui
  • Patent number: 8908727
    Abstract: A laser assembly and a method for manufacturing the same are provided according to embodiments of the present disclosure. The laser assembly (900) may comprise a first plate (903) having first projections (918, 928); a printed circuit board assembly (902) including a printed circuit board (912) having first openings (913, 915) and a laser module (100) thereon, and a second plate (901) having second projections (917, 927). The printed circuit board assembly (902) can be retained between the first plate (903) and the second plate (901) by the first projections (918, 928) and the second projections (917, 927). The laser assembly may further comprises a first pad (930) provided between the laser module (100) and the first plate (903) and/or a second pad (920) provided between the laser module (100) and the second plate (901).
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: December 9, 2014
    Assignee: Emcore Corporation
    Inventors: Yinan Wu, Frank Ding, Vincent Nguyen
  • Patent number: 8908731
    Abstract: A laser dazzler device and method. More specifically, embodiments of the present invention provide laser dazzling devices power by one or more green laser diodes characterized by a wavelength of about 500 nm to 540 nm. In various embodiments, laser dazzling devices according to the present invention include non-polar and/or semi-polar green laser diodes. In a specific embodiment, a single laser dazzling device includes a plurality of green laser diodes. There are other embodiments as well.
    Type: Grant
    Filed: January 28, 2013
    Date of Patent: December 9, 2014
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Paul Rudy
  • Patent number: 8902948
    Abstract: A degree of polarization control device includes: a calcium fluoride crystal substrate for transmitting a laser beam; a polarization monitor for measuring the degree of polarization of a laser beam transmitted through the calcium fluoride crystal substrate; and a controller for controlling the rotation angle of the calcium fluoride crystal substrate according to the degree of polarization measured by the polarization monitor; the calcium fluoride crystal substrate being formed by a flat plate having a laser beam entering surface and a laser beam exiting surface running in parallel with the (111) crystal face, the Brewster angle being selected for the incident angle, the rotation angle around the [111] axis operating as a central axis being controlled by the controller.
    Type: Grant
    Filed: July 22, 2013
    Date of Patent: December 2, 2014
    Assignee: Gigaphoton Inc.
    Inventors: Shinji Nagai, Fumika Yoshida, Osamu Wakabayashi, Kouji Kakizaki
  • Patent number: 8897327
    Abstract: A laser diode device including a housing having a mounting area in a cavity of the housing, at least one laser diode chip that emits electromagnetic radiation through a radiation exit area during operation, at least one covering element which is transmissive, at least in places, to the electromagnetic radiation generated by the laser diode chip during operation, and a deflection element, that directs at least part of the electromagnetic radiation generated by the laser diode chip during operation in a direction of the covering element, wherein the radiation exit area of the laser diode chip runs substantially transversely or substantially perpendicularly with respect to the mounting area and/or with respect to the covering element, the covering element connects to the housing, and the covering element tightly closes the housing.
    Type: Grant
    Filed: April 15, 2013
    Date of Patent: November 25, 2014
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Karsten Auen, Uwe Strauss, Thomas Höfer
  • Patent number: 8897334
    Abstract: A light emitting device includes first and second electrodes, a semiconductor laser element, a bonding wire, a transparent frame section, and a lid section. The first electrode includes a convex section, a bottom surface surrounding the convex section, and a first surface. The second electrode includes a first surface opposed to the bottom surface of the first electrode and a second surface. The second electrode includes an opening section and a step section receding toward the first surface from the second surface. The semiconductor laser element is provided on the convex section and includes a light-emitting layer. The bonding wire is capable of electrically connecting the semiconductor laser element and the step section. The transparent frame section surrounds the convex section and is bonded to the bottom surface and the first surface of the second electrode. The lid section is bonded to the second surface of the second electrode.
    Type: Grant
    Filed: February 7, 2012
    Date of Patent: November 25, 2014
    Assignee: Toshiba Lighting & Technology Corporation
    Inventors: Yuji Takeda, Junichi Kinoshita
  • Patent number: 8891575
    Abstract: An optical resonator can include an optical feedback structure disposed on a substrate, and a composite including a matrix including a chromophore. The composite disposed on the substrate and in optical communication with the optical feedback structure. The chromophore can be a semiconductor nanocrystal. The resonator can provide laser emission when excited.
    Type: Grant
    Filed: November 29, 2005
    Date of Patent: November 18, 2014
    Assignee: Massachusetts Institute of Technology
    Inventors: Preston T. Snee, Yin Thai Chan, Daniel G. Nocera, Moungi G. Bawendi
  • Patent number: 8891573
    Abstract: Use of semiconductor materials having a lattice constant of within +/?1.6% of 6.1 angstroms facilitates improved semiconductor device performance and new semiconductor structures, for example integration of field-effect devices and optoelectronic devices on a single wafer. High-mobility channels are enabled, improving device performance.
    Type: Grant
    Filed: May 13, 2013
    Date of Patent: November 18, 2014
    Assignee: Arizona Board of Regents
    Inventor: Yong-Hang Zhang
  • Patent number: 8891570
    Abstract: In a BH laser which uses InGaAlAs-MQW in an active layer, Al-based semiconductor multi-layer films including an InP buffer layer and an InGaAlAs-MQW layer, and an InGaAsP etching stop layer are formed in a mesa shape, and a p type InP burial layer is buried in side walls of the mesa shape. An air ridge mesa-stripe of a lateral center that is substantially the same as that of the mesa shape is formed on the mesa shape. According to the present structure, a leakage current can be considerably reduced, the light confinement coefficient can be made to be larger than in a BH laser in the related art, and thereby it is possible to implement a semiconductor laser with a low leakage current and a high relaxation oscillation frequency.
    Type: Grant
    Filed: February 7, 2013
    Date of Patent: November 18, 2014
    Assignee: Oclaro Japan, Inc.
    Inventors: Kouji Nakahara, Yuki Wakayama, Takeshi Kitatani, Kazunori Shinoda
  • Patent number: 8891568
    Abstract: A laser diode device includes: a semiconductor substrate including a semi-polar surface, the semiconductor substrate being formed of a hexagonal III-nitride semiconductor; an epitaxial layer including a light emitting layer, the epitaxial layer being formed on the semi-polar surface of the semiconductor substrate, and the epitaxial layer including a ridge section; a first electrode formed on a top surface of the ridge section; an insulating layer covering the epitaxial layer in an adjacent region of the ridge section and a side surface of the ridge section, the insulating layer covering part or all of side surfaces of the first electrode continuously from the epitaxial layer; a pad electrode formed to cover a top surface of the first electrode and the insulating layer, the pad electrode being electrically connected to the first electrode; and a second electrode formed on a surface, of the semiconductor substrate, opposite to the semi-polar surface.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: November 18, 2014
    Assignees: Sony Corporation, Sumitomo Electric Industries, Inc.
    Inventors: Noriyuki Futagawa, Hiroshi Nakajima, Katsunori Yanashima, Takashi Kyono, Masahiro Adachi
  • Patent number: 8891569
    Abstract: The present invention relates to a VCSEL array comprising several VCSELs arranged side by side on a common substrate (1). Each VCSEL is formed of at least a top mirror (5, 14), an active region (4), a current injection layer (3) and an undoped bottom semiconductor mirror (2). The current injection layer (3) is arranged between the active region (4) and the bottom semiconductor mirror (2). At least an upper layer of the substrate (1) is electrically conducting. Trenches (8) and/or holes are formed between the bottom semiconductor mirrors (2) of said VCSELs to said upper layer of said substrate (1). A metallization (9) electrically connects the upper layer of the substrate (1) with the current injection layer (3) through said trenches (8) and/or holes. The proposed VCSEL array allows a homogeneous current injection an has a high efficiency and power density.
    Type: Grant
    Filed: March 2, 2012
    Date of Patent: November 18, 2014
    Assignee: Koninklijke Philips N.V.
    Inventor: Philipp Henning Gerlach
  • Patent number: 8885683
    Abstract: A process for forming a microstructure of a nitride semiconductor including (1) preparing a semiconductor structure which has a second semiconductor layer formed of a group III nitride semiconductor containing at least Al formed on a principal plane of a first semiconductor layer formed of a group III nitride semiconductor containing no Al, and which has a hole that penetrates through the second semiconductor layer and is formed in the first semiconductor layer; (2) subjecting the semiconductor structure to heat treatment under a gas atmosphere including a nitrogen element after step (1) to form a crystal plane of the group III nitride semiconductor containing no Al, on at least a part of a side wall of the hole; and (3) forming a third semiconductor layer formed of a group III nitride semiconductor on the second semiconductor layer after step (2) to cover the upper part of the hole.
    Type: Grant
    Filed: September 7, 2012
    Date of Patent: November 11, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Katsuyuki Hoshino, Yasuhiro Nagatomo, Shoichi Kawashima, Takeshi Kawashima
  • Patent number: 8879595
    Abstract: Semiconductor structures, quantum cascade structures and lasers including the structures are provided. The semiconductor structures include a substrate, a metamorphic buffer layer structure over the substrate, and a quantum cascade structure including a superlattice of quantum wells and barriers over the metamorphic buffer layer structure. The substrate may be GaAs and the quantum cascade structure may be an InGaAs/InAlAs superlattice, including one or more barriers of AlAs.
    Type: Grant
    Filed: October 28, 2011
    Date of Patent: November 4, 2014
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Luke J. Mawst, Jeremy D. Kirch, Thomas F. Kuech
  • Publication number: 20140314113
    Abstract: A semiconductor laser outputs a laser light from an output facet of a waveguide having an index waveguide structure, via a lens system. The waveguide includes, in order from a rear facet opposite to the output facet, a first narrow portion, a wide portion that is wider than the first narrow portion, a second narrow portion narrower than the wide portion, a first tapered portion formed between the first narrow portion and the wide portion, which expands toward the wide portion, and a second tapered portion formed between the wide portion and the second narrow portion, which narrows toward the second narrow portion. Each of the first narrow portion, the wide portion, and the second narrow portion has a uniform width.
    Type: Application
    Filed: July 2, 2014
    Publication date: October 23, 2014
    Inventors: Yutaka OHKI, Satoshi ARAKAWA, Shunsuke OKUYAMA, Masaki FUNABASHI, Junji YOSHIDA, Hidehiro TANIGUCHI
  • Patent number: 8867582
    Abstract: A laser diode assembly includes a housing having a housing part and a mounting part that is connected to the housing part and that extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 3 ?m is arranged between the laser diode chip and the mounting part.
    Type: Grant
    Filed: April 4, 2013
    Date of Patent: October 21, 2014
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Uwe Strauss, Soenke Tautz, Alfred Lell, Karsten Auen, Clemens Vierheilig
  • Patent number: 8867581
    Abstract: A semiconductor laser includes: a semiconductor layer including an active layer and a ridge portion, the ridge portion facing a current injection region of the active layer; and an embedded film covering a side surface of the ridge portion and a top surface of the semiconductor layer, wherein the embedded film includes a first layer configured of a silicon oxide film, a second layer made of a silicon compound having a refractive index lower than that of the active layer and having a silicon content higher than a stoichiometric ratio, and a third layer made of an inorganic insulating material in this order of closeness to the ridge portion and the semiconductor layer.
    Type: Grant
    Filed: January 8, 2013
    Date of Patent: October 21, 2014
    Assignee: Sony Corporation
    Inventors: Hiroyasu Matsugai, Kei Satou
  • Patent number: 8866041
    Abstract: A manufacturing method of laser diode unit of the present invention includes steps: placing a laser diode on top of a solder member formed on a mounting surface of a submount, applying a pressing load to the laser diode and pressing the laser diode against the solder member, next, melting the solder member by heating the solder member at a temperature higher than a melting point of the solder member while the pressing load is being applied, and thereafter, bonding the laser diode to the submount by cooling and solidifying the solder member, thereafter, removing the pressing load, and softening the solidified solder member by heating the solder member at a temperature lower than the melting point of the solder member after the pressing load has been removed, and thereafter cooling and re-solidifying the solder member.
    Type: Grant
    Filed: April 12, 2012
    Date of Patent: October 21, 2014
    Assignees: TDK Corporation, Rohm Co., Ltd, SAE Magnetics (H.K.) Ltd.
    Inventors: Koji Shimazawa, Osamu Shindo, Yoshihiro Tsuchiya, Yasuhiro Ito, Kenji Sakai
  • Patent number: 8861561
    Abstract: Provided is a semiconductor laser chip improved more in heat dissipation performance. This semiconductor laser chip includes a substrate, which has a front surface and a rear surface, nitride semiconductor layers, which are formed on the front surface of the substrate, an optical waveguide (ridge portion), which is formed in the nitride semiconductor layers, an n-side electrode, which is formed on the rear surface of the substrate, and notched portions, which are formed in regions that include the substrate to run along the optical waveguide (ridge portion). The notched portions have notched surfaces on which a metal layer connected to the n-side electrode is formed.
    Type: Grant
    Filed: December 2, 2010
    Date of Patent: October 14, 2014
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Toshiyuki Kawakami, Akira Ariyoshi
  • Publication number: 20140301418
    Abstract: Photonic crystal cavities and related devices and methods are described. The described cavities can be used as lasers, photovoltaic sources, and single photon sources. The cavities can be both optically and electrically pumped. A fabrication process of the cavities is also described.
    Type: Application
    Filed: December 3, 2013
    Publication date: October 9, 2014
    Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY
    Inventors: Seheon KIM, Axel SCHERER
  • Patent number: 8855162
    Abstract: A disclosed surface emitting laser device includes a light emitting section having a mesa structure where a lower reflection mirror, an oscillation structure, and an upper reflection mirror are laminated on a substrate, the oscillation structure including an active layer, the upper reflection mirror including a current confined structure where an oxide surrounds a current passage region, a first dielectric film that coats the entire surface of an emitting region of the light emitting section, the transparent dielectric including a part where the refractive index is relatively high and a part where the refractive index is relatively low, and a second dielectric film that coats a peripheral part on the upper surface of the mesa structure. Further, the dielectric film includes a lower dielectric film and an upper dielectric film, and the lower dielectric film is coated with the upper dielectric film.
    Type: Grant
    Filed: June 12, 2013
    Date of Patent: October 7, 2014
    Assignee: Ricoh Company, Ltd.
    Inventors: Hiroyoshi Shouji, Shunichi Sato
  • Patent number: 8855155
    Abstract: In at least one embodiment of the semiconductor laser light source, the latter includes a carrier and at least two semiconductor lasers. The semiconductor lasers are mounted on a carrier top. The semiconductor laser light source furthermore includes at least one optical component, which is arranged downstream of at least one of the semiconductor lasers in a direction of emission. The semiconductor lasers and the optical component are housed tightly in a common enclosure by way of a cover. The dimensions of the enclosure, viewed in three orthogonal spatial directions, amount in each case to at most 8 mm×8 mm×7 mm.
    Type: Grant
    Filed: March 21, 2011
    Date of Patent: October 7, 2014
    Assignee: Osram Opto Semiconductors GmbH
    Inventors: Stephan Lutgen, Stefan Groetsch
  • Publication number: 20140291494
    Abstract: An optical communication module has a conversion element, a bendable conductive plate, a first resin cast body, a second resin cast body, and a lens part. The conversion element converts an optical signal to an electrical signal or an electrical signal to an optical signal. The conductive plate has the conversion element mounted thereto. The first resin cast body is cast with a first portion of the conductive plate embedded therein. The second resin cast body is cast with a second portion of the conductive plate embedded therein. The lens part is provided on the second resin cast body. The conversion element is mounted to the first portion of the conductive plate. The first resin cast body and the second resin cast body are fixed with the conductive plate bent such that the conversion element faces the lens part.
    Type: Application
    Filed: December 1, 2012
    Publication date: October 2, 2014
    Inventor: Shigeo Hayashi
  • Patent number: 8848755
    Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.
    Type: Grant
    Filed: December 5, 2013
    Date of Patent: September 30, 2014
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Mathew C. Schmidt, Yu-Chia Chang
  • Patent number: 8848754
    Abstract: Semiconductor structures for laser devices are provided. The semiconductor structures have a quantum cascade laser structure comprising an electron injector, an active region, and an electron extractor. The active region comprises an injection barrier, a multiquantum well structure, and an exit barrier. The multiquantum well structure can comprise a first barrier, a first quantum well, a second barrier, a second quantum well, and a third barrier. The energies of the first and second barrier are less than the energy of the third barrier. The energy difference between the energy of the second barrier and the energy of the third barrier can be greater than 150 meV and the ratio of the energy of the third barrier to the energy of the second barrier can be greater than 1.26.
    Type: Grant
    Filed: August 22, 2012
    Date of Patent: September 30, 2014
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Dan Botez, Jae Cheol Shin
  • Publication number: 20140286367
    Abstract: A nanopillar photonic crystal laser includes a plurality of nanopillars and a support structure in contact with at least a portion of each of the nanopillars. Each nanopillar has an axial dimension and two mutually orthogonal cross dimensions. The axial dimension of each of the nanopillars is greater than the two mutually orthogonal cross dimensions, where there mutually orthogonal cross dimensions are less than about 1 ?m and greater than about 1 nm. The support structure holds the plurality of nanopillars in preselected relative orientations and displacements relative to each other to form an array pattern that confines light of a preselected wavelength to a resonance region that intercepts at least one nanopillar of the plurality of nanopillars. The at least one nanopillar includes a lasing material to provide an output laser beam of light at the preselected wavelength.
    Type: Application
    Filed: November 4, 2013
    Publication date: September 25, 2014
    Applicant: The Regents of the University of California
    Inventors: Adam C. Scofield, Diana Huffaker
  • Patent number: 8842709
    Abstract: A surface emitting semiconductor laser includes a first semiconductor multilayer reflector of a first conductivity type, an active area, a second semiconductor multilayer reflector of a second conductivity type, a current confinement layer having a conductive area and a surrounding high-resistance area, each provided on a substrate, and a higher-order transverse mode suppressing layer formed on an emission surface from which laser light is emitted and in an area in which higher-order transverse mode is induced. The higher-order transverse mode suppressing layer includes first to third insulation films having first to third refractive indices, respectively, formed on each other, and capable of transmitting an oscillation wavelength. The second refractive index is lower than the first refractive index. The third refractive index is higher than the second refractive index. The optical film thickness of the first to third insulation films is an odd number times one-fourth of the oscillation wavelength.
    Type: Grant
    Filed: June 5, 2013
    Date of Patent: September 23, 2014
    Assignee: Fuji Xerox Co., Ltd.
    Inventors: Kazutaka Takeda, Takashi Kondo
  • Patent number: 8837545
    Abstract: Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.
    Type: Grant
    Filed: July 13, 2012
    Date of Patent: September 16, 2014
    Assignee: Soraa Laser Diode, Inc.
    Inventor: James W. Raring
  • Patent number: 8837546
    Abstract: A laser dazzler device and method. More specifically, embodiments of the present invention provide laser dazzling devices power by one or more green laser diodes characterized by a wavelength of about 500 nm to 540 nm. In various embodiments, laser dazzling devices according to the present invention include non-polar and/or semi-polar green laser diodes. In a specific embodiment, a single laser dazzling device includes a plurality of green laser diodes. There are other embodiments as well.
    Type: Grant
    Filed: July 9, 2013
    Date of Patent: September 16, 2014
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Paul Rudy
  • Patent number: 8837547
    Abstract: A method for preparing a VCSEL can use MBE for: growing a first conduction region over a first mirror region; growing an active region over the first conduction region opposite of the first mirror region, including: (a) growing a quantum well barrier having In1-xGaxP(As); (b) growing an transitional layer having one or more of GaP, GaAsP, or GaAs; (c) growing a quantum well layer having In1-zGazAsyP1-y; (d) growing another transitional layer have one or more of GaP, GaAsP, or GaAs; (e) repeating processes (a) through (d) over a plurality of cycles; and (f) growing a quantum well barrier having In1-xGaxP(As); growing a second conduction region over the active region opposite of the first conduction region, wherein: x ranges from 0.77 to 0.50; y ranges from 0.7 to 1; and z ranges from 0.7 to 0.99.
    Type: Grant
    Filed: March 19, 2012
    Date of Patent: September 16, 2014
    Assignee: Finisar Corporation
    Inventors: Ralph H. Johnson, Jerome K. Wade
  • Patent number: 8831062
    Abstract: A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallization layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallization layer opposite to the n-metallization layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallization layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallization layer is larger than a width of the active region.
    Type: Grant
    Filed: April 6, 2011
    Date of Patent: September 9, 2014
    Assignee: II-VI Laser Enterprise GmbH
    Inventors: Hans-Ulrich Pfeiffer, Andrew Cannon Carter, Jörg Troger, Norbert Lichtenstein, Michael Schwarz, Abram Jakubowicz, Boris Sverdlov
  • Patent number: 8831058
    Abstract: Implementing a layered hyperbolic metamaterial in a vertical cavity surface emitting laser (VCSEL) to improve thermal conductivity and thermal dissipation thereby stabilizing optical performance. Improvement in the thermal management and power is expected by replacing the distributed Bragg reflector (DBR) mirrors in the VCSEL. The layered metamaterial structure performs the dual function of the DBR and the heat spreader at the same time.
    Type: Grant
    Filed: September 6, 2012
    Date of Patent: September 9, 2014
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Yannick C. Morel, Igor I. Smolyaninov
  • Patent number: 8824516
    Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.
    Type: Grant
    Filed: September 6, 2013
    Date of Patent: September 2, 2014
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Toshiyuki Kawakami, Tomoki Ono, Shigetoshi Ito, Susumu Omi
  • Patent number: 8822975
    Abstract: A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga, the method includes the steps of: forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate.
    Type: Grant
    Filed: April 20, 2012
    Date of Patent: September 2, 2014
    Assignee: Sony Corporation
    Inventors: Masaru Kuramoto, Eiji Nakayama, Yoshitsugu Ohizumi