Abstract: A semiconductor laser includes: a stacked body having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 ?m and not more than 18 ?m by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light; and a dielectric layer provided so as to sandwich both sides of at least part of side surfaces of the stacked body, a wavelength at which a transmittance of the dielectric layer decreases to 50% being 16 ?m or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer.

Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

Abstract: A light emitting device is disclosed. The disclosed light emitting device includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, a second electrode layer disposed beneath the light emitting structure and electrically connected to the second-conductivity-type semiconductor layer, a first electrode layer including a main electrode disposed beneath the second electrode layer, and at least one contact electrode branching from the main electrode and extending through the second electrode layer, the second-conductivity-type semiconductor layer and the active layer, to contact the first-conductivity-type semiconductor layer, and an insulating layer interposed between the first electrode layer and the second electrode layer and between the first electrode layer and the light emitting structure.

Abstract: There is provided a semiconductor light emitting element that is excellent in reliability and is capable of being driven by a lower voltage and a semiconductor light emitting device that includes the semiconductor light emitting element. The semiconductor light emitting element includes: a semiconductor layer; an electrode layer; a metal layer that contains a hydrogen storage metal; and a plated layer in order.

Abstract: A quantum cascade laser includes a substrate having first and second regions; a stacked semiconductor layer disposed on the second region, the stacked semiconductor layer including an active layer, the stacked semiconductor layer having a first end facet and a second end facet that constitute a laser cavity; an insulating layer disposed on the first end facet and an upper surface of the stacked semiconductor layer, the insulating layer having an opening on the upper surface; a conductive layer disposed on the insulating layer and in the opening, the conductive layer being in contact with the upper surface through the opening; and a metal layer disposed on the conductive layer on the first end facet and the upper surface. The first end facet of the stacked semiconductor layer is retreated from an end facet of the substrate to a boundary between the first and second regions.

Abstract: An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.

Abstract: A light-emitting diode includes a substrate; a light-emitting epitaxial layer, laminated by semiconductor material layers and formed over the substrate; a first current spreading layer over the light-emitting epitaxial layer; an adhesive layer with alternating second current spreading layers and first metal barrier layers over the first current spreading layer, including three structure layers; a second metal barrier layer over the adhesive layer with alternating second current spreading layers and metal barrier layers; and a metal electrode layer over the second metal barrier layer.

Abstract: A device includes one or more reflector components. Each reflector component comprises layer pairs of epitaxially grown reflective layers and layers of a non-epitaxial material, such as air. Vias extend through at least some of the layers of the reflector components. The device may include a light emitting layer.

Abstract: A light emitting diode (100 or 150) includes a diode structure containing a quantum well (120), an enhancement layer (142), and a barrier layer (144 or 148) between the enhancement layer (142) and the quantum well (120). The enhancement layer (142) supports plasmon oscillations at a frequency that couples to photons produced by combination of electrons and holes in the quantum well (120). The barrier layer serves to block diffusion between the enhancement layer (142) and the diode structure.

Abstract: An optical semiconductor device includes: a mesa stripe structure including an n-type cladding layer, an active layer, and a p-type cladding layer laid one on another; and a buried layer buried on opposite sides of the mesa stripe structure, wherein the active layer is a multiple quantum well structure having well layers and carbon-doped barrier layers, the buried layer includes a p-type semiconductor layer and an Fe-doped or Ru-doped high-resistance semiconductor layer laid one on another, side surfaces of the n-type cladding layer are covered with the p-type semiconductor layer and are not contiguous with the high-resistance semiconductor layer, and side surfaces of the active layer are not contiguous with the p-type semiconductor layer.

Abstract: The present edge-emitting semiconductor layer element includes two-dimensional photonic crystals 4 formed in a semiconductor layer, and when one direction of a contact region of an electrode 8 is provided as a length direction (X-direction) and a direction perpendicular to both of the length direction and a thickness direction of a substrate is provided as a width direction (Y-direction), the two-dimensional photonic crystals 4 are, when viewed from a direction (Z-axis) perpendicular to the substrate, located in a region containing the electrode contact region and wider in the width direction than the contact region, and have a refractive index periodic structure in which the refractive index satisfies a Bragg's diffraction condition while periodically changing at every interval along the one direction (X-axis).

Abstract: A vertical cavity surface emitting laser includes: a substrate; a first mirror layer which is provided over the substrate; an active layer which is provided over the first mirror layer; a second mirror layer which is provided over the active layer; a first electrode and a second electrode which are electrically connected to the first mirror layer and are separated from each other; and a third electrode which is electrically connected to the second mirror layer, wherein the first mirror layer, the active layer, and the second mirror layer configure a laminated body, the laminated body includes a resonance portion which resonates light generated in the active layer, in a plan view, an insulation layer surrounding the laminated body is provided, and in the plan view, the insulation layer is provided between the first electrode and the second electrode.

Abstract: A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm.

Abstract: A quantum cascade laser includes a substrate having a conductivity type, substrate having a first region, a second region, and a third region; a semiconductor lamination provided on a principal surface of the substrate, the semiconductor lamination including a mesa stripe section provided on the second region, an upper cladding layer having the same conductivity type as the substrate, a first burying layer, and a second burying layer, the mesa stripe section including a core layer; and an electrode provided on the semiconductor lamination. The first and second burying layers are provided on the first and third regions and on both side faces of the mesa stripe section. The upper cladding layer is provided on the mesa stripe section, the first burying layer, and the second burying layer. The first and second burying layers include a first and second semi-insulating semiconductor regions comprised of a semi-insulating semiconductor material.

Abstract: A photonic integrated circuit (PIC) that includes an optical source that provides an optical signal having a wavelength is described. This optical source includes a reflecting layer, a bottom cladding layer, an active layer (such as a III-V semiconductor) having a bandgap wavelength that exceeds that of silicon, and a top cladding layer. Moreover, an optical coupler (such as a grating coupler) that couples the optical signal out of a plane of the active layer is included in a region of the active layer. In this region, the top cladding layer is absent. Furthermore, in an adjacent region, the top cladding layer includes an inverse taper so that the top cladding layer is tapered down from a width distal from the region. In conjunction with the optical coupler, the inverse taper may facilitate low-loss optical coupling of the optical signal between the PIC and another PIC.

Abstract: In various embodiments, a laser apparatus includes a beam emitter, first and second mounts disposed on opposing sides of the beam emitter and in electrical and thermal contact therewith, and a housing body for conducting heat away from the beam emitter.

Abstract: A terahertz-wave generating element includes a waveguide including an electro-optic crystal; an optical coupling member that extracts a terahertz wave, which is generated from the electro-optic crystal as a result of light propagating through the waveguide, to a space; and at least two electrodes that cause a first-order electro-optic effect in the electro-optic crystal by applying an electric field to the waveguide so as to change a propagation state of the light propagating through the waveguide. A crystal axis of the electro-optic crystal of the waveguide is set such that the terahertz wave generated by a second-order nonlinear optical process and the light propagating through the waveguide are phase-matched.

Abstract: Provided is a reflective colorless optical transmitter receiving a carrier signal, which is a continuous wave, and outputting a modulated optical signal. The reflective colorless optical transmitter includes a semiconductor optical amplifier (SOA) amplifying an input optical signal allowing the input optical signal to have a gain, an optical modulator connected to the SOA and outputting a modulated optical signal, a high reflectivity facet reflecting the modulated optical signal from the optical modulator, and a Bragg reflection mirror connected to the high reflectivity facet, the optical modulator, and the SOA in series, wherein a Bragg resonator is formed by the Bragg reflecting mirror and the high reflectivity facet.

Abstract: An edge emitting semiconductor laser includes a semiconductor body including a waveguide region, wherein the waveguide region includes a first waveguide layer, a second waveguide layer and an active layer arranged between the first and second waveguide layers and generates laser radiation, the waveguide region is arranged between first and second cladding layers disposed downstream of the waveguide region in a growth direction of the semiconductor body, a phase structure is formed in the semiconductor body and includes at least one cutout extending from a top side of the semiconductor body into the second cladding layer, at least one first intermediate layer including a semiconductor material different from the semiconductor material of the second cladding layer is embedded into the second cladding layer, and the cutout extends from a top side of the semiconductor body at least partly into the first intermediate layer.

Abstract: When an end-face-emitting photonic crystal laser element 10 is seen in an X axis, one end of an upper electrode E2 overlaps a laser light exit surface SF, the upper electrode E2 and an opposite end face SB are separated from each other, the upper electrode E2 is separated from both lateral end faces SR, SL, and one end of an active layer 3B overlaps the laser light exit surface SF.

Abstract: Surface emitting laser structures that include a partially reflecting element disposed in the laser optical cavity are disclosed. A vertical external cavity surface emitting laser (VECSEL) structure includes a pump source configured to emit radiation at a pump wavelength, ?pump, an external out-coupling reflector, a distributed Bragg reflector (DBR,) and an active region arranged between the DBR and the out-coupling reflector. The active region is configured to emit radiation at a lasing wavelength, ?lase. The VECSEL structure also includes partially reflecting element (PRE) arranged between the gain element and the external out-coupling reflector. The PRE has reflectivity of between about 30% and about 70% for the radiation at the lasing wavelength and reflectivity of between about 30% and about 70% for the radiation at the pump wavelength.

Abstract: Provided is a semiconductor laser which has a low operating current and stably oscillates even for high-temperature output. The semiconductor laser is provided with a substrate (10); an n-type clad layer (12) arranged on the substrate (10); an active layer (13) arranged on the n-type clad layer (12); a p-type clad layer (14), which is arranged on the active layer (13) and composed of a compound containing Al and has a stripe-shaped ridge structure to be a current channel; a current block layer (16), which is arranged on the surface of the p-clad layer (14) excluding an upper surface of the ridge structure and composed of a compound containing Al and has an Al composition ratio not more than that of the p-type clad layer (14); and a light absorption layer (17), which is arranged on the current block layer (16) and absorbs light at the laser oscillation wavelength.

Abstract: Monolithically integrated optical resonators are disclosed. An optical resonator may be a nanopillar optical resonator that is formed directly on a substrate and promotes a helically-propagating cavity mode. The helically-propagating cavity mode may result in significant reflection or, total internal reflection at an interface of the nanopillar optical resonator and the substrate even if refractive indices of the nanopillar optical resonator and the substrate are the same or similar. As a result, strong optical feedback, and thus strong resonance, may be provided in the nanopillar optical resonator.

Abstract: According to one embodiment, a semiconductor light emitting device includes first and second semiconductor layers, and a light emitting unit. The light emitting unit is provided between the first and second semiconductor layers and includes well layers and barrier layers. The barrier layers include p-side and n-side barrier layers, and a first intermediate barrier layer. The n-side barrier layer is provided between the p-side barrier layer and the first semiconductor layer. The first intermediate barrier layer is provided between the barrier layers. The well layers include p-side and n-side well layers, and a first intermediate well layer. The p-side well layer is provided between the p-side barrier layer and the second semiconductor layer. The n-side well layer is provided between the n-side barrier layer and the first intermediate barrier layer. The first intermediate well layer is provided between the first intermediate barrier layer and the p-side barrier layer.

Abstract: A laser light source having a ridge waveguide structure includes a semi-conductor layer sequence having a number of functional layers and an active region that is suitable for generating laser light during operation. At least one of the functional layers is designed as a ridge of the ridge waveguide structure. The semiconductor layer sequence has a mode filter structure that is formed as part of the ridge and/or along a main extension plane of the functional layers next to the ridge and/or perpendicular to the main extension plane of the functional layers below the ridge.

Abstract: Various embodiments of a photonic device and fabrication method thereof are provided. In one aspect, a device includes a substrate, a current confinement layer disposed on the substrate, an absorption layer disposed in the current confinement layer, and an electrical contact layer disposed on the absorption layer. The current confinement layer is doped in a pattern and configured to reduce dark current in the device. The photonic device may be a photodiode or a laser.

Abstract: Novel methods and systems for miniaturized lasers are described. A photonic crystal is bonded to a silicon-on-insulator wafer. The photonic crystal includes air-holes and can include a waveguide which couples the laser output to a silicon waveguide.

Abstract: A method of manufacturing an optical semiconductor device including: forming a mesa structure including a first conductivity type cladding layer, an active layer and a second conductivity type cladding layer in this order on a first conductivity type semiconductor substrate, an upper most surface of the mesa structure being constituted of an upper face of the second conductivity type cladding layer; growing a first burying layer burying both sides of the mesa structure at higher position than the active layer; forming an depressed face by etching both edges of the upper face of the second conductivity type cladding layer; and growing a second burying layer of the first conductivity type on the depressed face of the second conductivity type cladding layer and the first burying layer.

Abstract: A tuneable laser source includes a first confinement layer forming a Bragg reflector for a pump wave; an active layer made of non-linear semiconducting material, the refraction index of the active layer being greater than the refraction index of the first confinement layer; a second confinement layer, the refraction index of the second confinement layer being less than the refraction index of the active layer; a base with a first width; and a ribbon with a second width less than the first width. The second width is less than 10 ?m; the active layer includes at least one plane of quantum boxes capable of emitting a pump wave and the ribbon includes at least the part of the active layer including the quantum boxes plane and the second confinement layer.

Abstract: A semiconductor laser includes: a p-type semiconductor substrate; a ridge having an active layer and cladding layers on the semiconductor substrate; a current blocking layer embedding side surfaces of the ridge; and an n-type contact layer on the ridge and the current blocking layer. The current blocking layer includes a first p-type layer, an n-type layer or a hole-trapping insulating semiconductor layer, a second p-type layer, a diffusion inhibiting layer, and a third p-type layer stacked, in order, from the semiconductor substrate. The n-type contact layer includes a p-type inverted region located in a portion of the n-type contact layer, in contact with the third p-type layer. Dopants in the third p-type layer diffuse into the p-type inverted region. The diffusion inhibiting layer is an undoped semiconductor material or a semi-insulating semiconductor material and inhibits dopants in the third p-type layer from being diffused into the active layer.

Abstract: A semiconductor laser device includes a first conductivity type semiconductor substrate, a first conductivity type cladding layer, a first light guide layer, an active layer, a second light guide layer, and a second conductivity type cladding layer laminated on the semiconductor substrate in that order. The semiconductor laser device supports at least one of a first-order and higher-order mode of oscillation in the semiconductor laser in crystal growth direction of the active layer. The first light guide layer is thicker than the second light guide layer. A first conductivity type low refractive index layer having a lower refractive index than refractive index of the first conductivity type cladding layer, is disposed between the first conductivity type cladding layer and the first light guide layer. The refractive index of the second light guide layer is higher than the refractive index of the first light guide layer.

Abstract: An ultrashort pulse and ultrahigh power laser diode device capable of outputting pulse laser light having higher peak power with a simple composition and a simple structure is provided. The laser diode device includes: a laminated structure composed of a first compound semiconductor layer containing n-type impurity, an active layer having a quantum well structure, and a second compound semiconductor layer containing p-type impurity; a first electrode electrically connected to the first compound semiconductor layer; and a second electrode electrically connected to the second compound semiconductor layer, wherein the second compound semiconductor layer is provided with an electron barrier layer having a thickness of 1.5*10?8 m or more, and driving is made by a pulse current having a value 10 or more times as large as a threshold current value.

Abstract: Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide.

Abstract: A disclosed surface emitting laser device includes a light emitting section having a mesa structure where a lower reflection mirror, an oscillation structure, and an upper reflection mirror are laminated on a substrate, the oscillation structure including an active layer, the upper reflection mirror including a current confined structure where an oxide surrounds a current passage region, a first dielectric film that coats the entire surface of an emitting region of the light emitting section, the transparent dielectric including a part where the refractive index is relatively high and a part where the refractive index is relatively low, and a second dielectric film that coats a peripheral part on the upper surface of the mesa structure. Further, the dielectric film includes a lower dielectric film and an upper dielectric film, and the lower dielectric film is coated with the upper dielectric film.

Abstract: A light emitting device includes a substrate, a laminated body formed by stacking a first cladding layer, a first active layer, a second cladding layer, a third cladding layer, a second active layer, and a fourth cladding layer on the substrate in this order, a first electrode connected to the first cladding layer, a second electrode connected to the second cladding layer and the third cladding layer, and a third electrode connected to the fourth cladding layer, the first active layer generates first light using the first electrode and the second electrode, the second active layer generates second light using the second electrode and the third electrode, and a side surface of the first active layer is provided with an emitting section for emitting the first light, and a side surface of the second active layer is provided with an emitting section for emitting the second light.

Abstract: A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate includes a p-side electrode surrounding an emitting area on an emitting surface to emit the laser light; and a transparent dielectric film formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part. The outside area within the emitting area has shape anisotropy in two mutually perpendicular directions.

Abstract: An interband cascade laser amplifier medium (M) having a number of cascades (C) strung together along a transport direction (T) of charge carriers and each having an electron injector region (I), an amplifier region (V) and an electron collector region (K), wherein the amplifier region (V) has a hole quantum film (1) having a first semiconductor material and an electron quantum film (2) having a second semiconductor material, and wherein the electron collector region (K) has at least one collector quantum film (4) having a third semiconductor material and separated by a first barrier layer (3), and the electron injector region (I) has at least one injector quantum film (5) having a fourth semiconductor material and separated by a second barrier layer (3).

Abstract: A laser system can include an electrode to transmit electrical carriers into an active region in response to first electrical stimulation. The laser system can also include another electrode to transmit electrical carriers into the active region in response to second electrical stimulation. The electrical carriers can be combined in the active region to emit photons to generate an optical signal. The system can further include yet another electrode responsive to electrical stimulation to affect a concentration of electrical carriers in a device layer to change a capacitance of an internal capacitance region associated with at least one of first and second waveguide regions and the device layer. The third electrical stimulation can be modulated to modulate the optical signal based on the change to the capacitance of the internal capacitance region.

Abstract: A directly driven laser includes multiple contacts, with at least one of the contacts for injecting current into the laser such that the laser reaches at least a lasing threshold and at least one of the contacts for providing a data signal to the laser. In some embodiments a differential data signal is effectively provided to a front and a rear section of the laser, while lasing threshold current is provided to a central portion of the laser.

Abstract: A group-III nitride semiconductor laser device comprises: a laser structure including a semiconductor region and a support base having a semipolar primary surface of group-III nitride semiconductor; a first reflective layer, provided on a first facet of the region, for a lasing cavity of the laser device; and a second reflective layer, provided on a second facet of the region, for the lasing cavity. The laser structure includes a laser waveguide extending along the semipolar surface. A c+ axis vector indicating a <0001> axial direction of the base tilts toward an m-axis of the group-III nitride semiconductor at an angle of not less than 63 degrees and less than 80 degrees with respect to a vector indicating a direction of an axis normal to the semipolar surface. The first reflective layer has a reflectance of less than 60% in a wavelength range of 525 to 545 nm.

Abstract: Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output powers are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding (front) end section degradation at very high light output powers by controlling the current flow in the laser diode in a defined way. This is achieved by controlling the carrier injection, i.e. the injection current, into the laser diode in a novel way by creating single current injection points along the laser diode's longitudinal extension, e.g. along the waveguide. Further, the supply current/voltage of each single or group of current injection point(s) may be separately regulated, further enhancing controllability of the carrier injection.

Abstract: The present invention provides a surface emitting laser that provides a sufficient optical output and is suitable as a light source intended for electrophotographic apparatuses, and a surface-emitting-laser array and an image forming apparatus each including the surface emitting laser. The surface emitting laser includes a first stepped structure on a front surface of a front mirror. In the first stepped structure, a difference L between an optical path length in a first area and an optical path length in a second area satisfies the following expression: (¼+N)?<|L|<(¾+N)? where N is an integer.

Abstract: The present invention relates to a VCSEL array comprising several VCSELs arranged side by side on a common substrate (1). Each VCSEL is formed of at least a top mirror (5, 14), an active region (4), a current injection layer (3) and an undoped bottom semiconductor mirror (2). The current injection layer (3) is arranged between the active region (4) and the bottom semiconductor mirror (2). At least an upper layer of the substrate (1) is electrically conducting. Trenches (8) and/or holes are formed between the bottom semiconductor mirrors (2) of said VCSELs to said upper layer of said substrate (1). A metallization (9) electrically connects the upper layer of the substrate (1) with the current injection layer (3) through said trenches (8) and/or holes. The proposed VCSEL array allows a homogeneous current injection an has a high efficiency and power density.

Abstract: A laser diode device includes: a semiconductor substrate including a semi-polar surface, the semiconductor substrate being formed of a hexagonal III-nitride semiconductor; an epitaxial layer including a light emitting layer, the epitaxial layer being formed on the semi-polar surface of the semiconductor substrate, and the epitaxial layer including a ridge section; a first electrode formed on a top surface of the ridge section; an insulating layer covering the epitaxial layer in an adjacent region of the ridge section and a side surface of the ridge section, the insulating layer covering part or all of side surfaces of the first electrode continuously from the epitaxial layer; a pad electrode formed to cover a top surface of the first electrode and the insulating layer, the pad electrode being electrically connected to the first electrode; and a second electrode formed on a surface, of the semiconductor substrate, opposite to the semi-polar surface.

Abstract: Semiconductor structures, quantum cascade structures and lasers including the structures are provided. The semiconductor structures include a substrate, a metamorphic buffer layer structure over the substrate, and a quantum cascade structure including a superlattice of quantum wells and barriers over the metamorphic buffer layer structure. The substrate may be GaAs and the quantum cascade structure may be an InGaAs/InAlAs superlattice, including one or more barriers of AlAs.

Abstract: A manufacturing method of laser diode unit of the present invention includes steps: placing a laser diode on top of a solder member formed on a mounting surface of a submount, applying a pressing load to the laser diode and pressing the laser diode against the solder member, next, melting the solder member by heating the solder member at a temperature higher than a melting point of the solder member while the pressing load is being applied, and thereafter, bonding the laser diode to the submount by cooling and solidifying the solder member, thereafter, removing the pressing load, and softening the solidified solder member by heating the solder member at a temperature lower than the melting point of the solder member after the pressing load has been removed, and thereafter cooling and re-solidifying the solder member.

Abstract: A semiconductor laser includes: a semiconductor layer including an active layer and a ridge portion, the ridge portion facing a current injection region of the active layer; and an embedded film covering a side surface of the ridge portion and a top surface of the semiconductor layer, wherein the embedded film includes a first layer configured of a silicon oxide film, a second layer made of a silicon compound having a refractive index lower than that of the active layer and having a silicon content higher than a stoichiometric ratio, and a third layer made of an inorganic insulating material in this order of closeness to the ridge portion and the semiconductor layer.

Abstract: Provided is a semiconductor laser chip improved more in heat dissipation performance. This semiconductor laser chip includes a substrate, which has a front surface and a rear surface, nitride semiconductor layers, which are formed on the front surface of the substrate, an optical waveguide (ridge portion), which is formed in the nitride semiconductor layers, an n-side electrode, which is formed on the rear surface of the substrate, and notched portions, which are formed in regions that include the substrate to run along the optical waveguide (ridge portion). The notched portions have notched surfaces on which a metal layer connected to the n-side electrode is formed.

Abstract: Provided is a vertical light emitting device comprising an upper multilayer reflective film and a lower multilayer reflective film that are formed facing each other and oscillate light; an intermediate layer that is formed below the upper multilayer reflective film and includes a layer having a different composition than the upper multilayer reflective film; and an electrode portion that is formed to sandwich the intermediate layer in a cross-sectional plane parallel to an oscillation direction of the light and to have a top end that is higher than a top surface of the intermediate layer. After the electrode portion is formed to sandwich the intermediate layer, the upper multilayer reflective film is layered on the intermediate layer.

Abstract: A broad area semiconductor diode laser device includes a multimode high reflector facet, a partial reflector facet spaced from said multimode high reflector facet, and a flared current injection region extending and widening between the multimode high reflector facet and the partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1. The broad area semiconductor laser device is a flared laser oscillator waveguide delivering improved beam brightness and beam parameter product over conventional straight waveguide configurations.