Abstract: The invention includes a single chip having multiple different devices integrated thereon for a common purpose. The chip includes a substrate having a peripheral area, a mid-chip area, and a central area. A plurality of FETs are formed in the peripheral area with each FET having a layer of single crystal rare earth material in at least one of a conductive channel, a gate insulator, or a gate stack. A plurality of photonic devices including light emitting diodes or vertical cavity surface emitting lasers are formed in the mid-chip area with each photonic device having an active layer of single crystal rare earth material. A plurality of photo detectors are formed in the central area.

Abstract: An optical semiconductor device includes: a substrate of semiconductor; an array having a plurality of active regions arranged on the substrate so as to emit light to the same direction, the plurality of active regions being arranged more densely at ends of the array than in the center of the array in a direction crossing the light emitting direction; and electrodes which inject current to the plurality of active regions.

Abstract: A semiconductor laser element includes a laminate composed of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and a second embedded layer that is in contact with the second conductivity type semiconductor layer, has a stripe-like groove parallel to the cavity direction, and is composed of an insulator, the groove is embedded with a first embedded layer composed of a dielectric on the cavity end face side, and with a conductive layer on the inside.

Abstract: Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of AlxGa1-xAs (0.8?x?1) and a high-refractive-index layer formed of AlyGa1-yAs (0?y?x), at least one of the low-refractive-index layer and the high-refractive-index layer being of n-type; and a lower electrode provided between the lower multilayer film reflecting mirror and the active layer and configured to inject an electric current into the active layer.

Abstract: A semiconductor laser device includes a substrate, ridge stripes on the substrate and separated by separation sections, a top surface electrode continuously extending over the ridge stripes, and a bottom surface electrode on a bottom surface of the substrate. Each of the ridge stripes includes a lower cladding layer on the substrate, an active layer on the lower cladding layer, an upper cladding layer on the active layer, and a contact layer on the upper cladding layer.

Abstract: A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate includes a p-side electrode surrounding an emitting area on an emitting surface to emit the laser light; and a transparent dielectric film formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part. The outside area within the emitting area has shape anisotropy in two mutually perpendicular directions.

Abstract: A light emitting device includes first and second cladding layers and an active layer therebetween including first and second side surfaces and first and second gain regions, a second side reflectance is higher than a first side reflectance, a first end surface part of the first gain region overlaps a second end surface part of the second gain region in an overlapping plane, the first gain region obliquely extends from the first end surface to a third end surface, the second gain region obliquely extends from the second end surface to a fourth end surface, a first center line connecting the centers of the first and third end surfaces and a second center line connecting the centers of the second and fourth end surfaces intersect, and the overlapping plane is shifted from the intersection point toward the first side surface.

Abstract: A semiconductor chip with a semiconductor body has a semiconductor layer sequence with an active region provided for generating radiation. A mirror structure that includes a mirror layer and a dielectric layer that is arranged at least in regions between the mirror layer and semiconductor body is arranged on the semiconductor body.

Abstract: Hybrid plasmonic waveguides are described that employ a high-gain semiconductor nanostructure functioning as a gain medium that is separated from a metal substrate surface by a nanoscale thickness thick low-index gap. The waveguides are capable of efficient generation of sub-wavelength high intensity light and have the potential for large modulation bandwidth >1 THz.

Abstract: A multi-beam semiconductor laser apparatus includes three or more stripe semiconductor laser emission units which are arranged on a substrate, isolation grooves which separate the semiconductor laser emission units from each other, and pad electrodes which are disposed on outer sides of the outermost semiconductor laser emission units. The isolation grooves are formed between the pad electrodes and the semiconductor laser emission units adjacent to the pad electrodes and between adjacent semiconductor laser emission units. A distance between two isolation grooves formed on outer sides of the outermost semiconductor laser light emission units is smaller than a distance between two isolation grooves formed on both sides of inner ones of the semiconductor laser light emission units.

Abstract: A disclosed surface emitting laser device includes a light emitting section having a mesa structure where a lower reflection mirror, an oscillation structure, and an upper reflection mirror are laminated on a substrate, the oscillation structure including an active layer, the upper reflection mirror including a current confined structure where an oxide surrounds a current passage region, a first dielectric film that coats the entire surface of an emitting region of the light emitting section, the transparent dielectric including a part where the refractive index is relatively high and a part where the refractive index is relatively low, and a second dielectric film that coats a peripheral part on the upper surface of the mesa structure. Further, the dielectric film includes a lower dielectric film and an upper dielectric film, and the lower dielectric film is coated with the upper dielectric film.

Abstract: Within a semiconductor laser device, mounting a semiconductor laser element array of multi-beam structure on a sub-mount, the semiconductor laser element array of multi-beam structure comprises one piece of a semiconductor substrate 11; a common electrode 1, which is formed on a first surface of the semiconductor substrate; a semiconductor layer 2, which is formed on the other surface of the semiconductor substrate, and has a plural number of light emitting portions 7 within an inside thereof; a plural number of anode electrodes 3 of a second conductivity type, which are formed above the plural number of light emitting portions, respectively; and a supporting portion 25, which is provided outside a region of forming the light emitting portions, wherein on one surface of the sub-mount is connected an electrode 3 of the semiconductor laser element array through a solder 4, and that solder 4 is formed to cover a supporting portion and an electrode neighboring thereto, and further on the electrode 3 is formed a g

Abstract: A semiconductor laser element includes a first electrode, a second electrode, a first reflecting mirror, a second reflecting mirror, and a resonator. The resonator includes an active layer, a current confinement layer, a first semiconductor layer having a first doping concentration formed at a side opposite to the active layer across the current confinement layer, and a second semiconductor layer having a second doping concentration higher than the first doping concentration formed between the first semiconductor layer and the current confinement layer. The first electrode is provided to contact a part of a surface of the first semiconductor layer. The first semiconductor layer has a diffusion portion into which a component of the first electrode diffuses. The second semiconductor layer contacts the diffusion portion. The second semiconductor layer is positioned at a node of a standing wave at a time of laser oscillation of the semiconductor laser element.

Abstract: A semiconductor light emitting device includes a lower cladding layer, an active layer, and an AlGaAs upper cladding layer mounted on a GaAs substrate. The semiconductor light emitting device has a ridge structure including the AlGaAs upper cladding layer. The semiconductor light emitting device further includes an InGaAs etching stop layer provided in contact with the lower side of the AlGaAs upper cladding layer. The InGaAs etching stop layer has a band gap greater than that of the active layer.

Abstract: A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate includes a p-side electrode surrounding an emitting area on an emitting surface to emit the laser light; and a transparent dielectric film formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part. The outside area within the emitting area has shape anisotropy in two mutually perpendicular directions.

Abstract: Provided is a Group III nitride semiconductor laser diode with a cladding layer capable of providing high optical confinement and carrier confinement. An n-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on a (20-21)-plane GaN substrate. A GaN optical guiding layer is grown so as to be lattice-relaxed on the n-type cladding layer. An active layer, a GaN optical guiding layer, an Al0.12Ga0.88N electron blocking layer, and a GaN optical guiding layer are grown so as not to be lattice-relaxed on the optical guiding layer. A p-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on the optical guiding layer. A p-type GaN contact layer is grown so as not to be lattice-relaxed on the p-type cladding layer, to produce a semiconductor laser. Dislocation densities at junctions are larger than those at the other junctions.

Abstract: In one example embodiment, a DFB laser includes a substrate, an active region positioned above the substrate, and a grating layer positioned above the active region. The grating layer includes a portion that serves as a primary etch stop layer. The DFB laser also includes a secondary etch stop layer located either above or below the grating layer, and a spacer layer interposed between the grating layer and the active region.

Abstract: A method of fabricating a semiconductor laser device by forming a semiconductor structure at least part of which is in the form of a mesa structure having a flat top. The steps include depositing a passivation layer over the mesa structure, forming a contact opening in the passivation layer on the flat top of the mesa structure; and depositing a metal contact portion, with the deposited metal contact portion contacting the semiconductor structure via the contact opening. The contact opening formed through the passivation layer has a smaller area than the flat top of the mesa structure to allow for wider tolerances in alignment accuracy. The metal contact portion comprises a platinum layer between one or more gold layers to provide an effective barrier against Au diffusion into the semiconductor material.

Abstract: A semiconductor optical element and an integrated semiconductor optical element suppressing leakage current flow through a burying layer. A mesa-stripe-shaped laminate structure includes a p-type cladding layer, an active layer, and an n-type cladding layer. A burying layer on a side of the laminated structure includes, a first p-type semiconductor layer, a first n-type semiconductor layer, an Fe-doped semiconductor layer, a second n-type semiconductor layer, a low carrier concentration semiconductor layer, and a second p-type semiconductor layer. The Fe-doped semiconductor layer is not grown on a (111)B surface of the first p-type semiconductor layer and of the first n-type semiconductor layer. The second n-type semiconductor layer is not grown on a (111)B surface of the first p-type semiconductor layer, of the first n-type semiconductor layer, and of the Fe-doped semiconductor layer.

Abstract: A method of manufacturing an optical semiconductor device includes: forming a mesa structure having an n-type cladding layer, an active layer and a p-type cladding layer in this order on a substrate; forming a p-type semiconductor layer on a side face of the mesa structure and a plane area located at both sides of the mesa structure, the p-type semiconductor layer having a thickness of 5 nm to 45 nm on the plane area; and forming a current blocking semiconductor layer on the p-type semiconductor layer so as to bury the mesa structure, a product of the thickness of the p-type semiconductor layer and a concentration of p-type impurity of the p-type semiconductor layer on the plane area being 2.5×1019 nm/cm3 or less.

Abstract: Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 ?m or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 ?m or more and 50 ?m or less.

Abstract: A vertical cavity surface emitting laser includes a semiconductor substrate, a first semiconductor multilayer film reflector of a first conductivity type laminated on the semiconductor substrate, a resonator, and a second semiconductor multilayer film reflector of a second conductivity type laminated on the resonator. In each of the first and second semiconductor multilayer film reflectors, a pair of a high-refractive-index layer and a low-refractive-index layer is stacked. The resonator includes an active layer laminated on the first semiconductor multilayer film reflector. The resonator includes a pair of spacer layers and a resonator extending region. A composition of at least a layer included in the resonator extending region is different from any of compositions of the semiconductor substrate, the first semiconductor multilayer film reflector, and the second semiconductor multilayer film reflector.

Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

Abstract: Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

Abstract: In order to separate a material layer from a substrate at the boundary face between the substrate and the material layer, a laser light is applied to a workpiece from the substrate side through a mask, the work having the material layer formed on the substrate. The laser beam is split into a plurality of small area laser light by the mask 44, and two or more irradiation regions are formed on the workpiece. Adjacent irradiation regions are separated from each other, and an edge part of each irradiation region and an edge part of an adjacent irradiation region, which extend in a direction parallel to the relative moving direction of the workpiece, are arranged such that the edge of the irradiation region and the edge of the adjacent irradiation region are sequentially overlapped each other as the work is moved.

Abstract: Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×1018 cm?3 or more and 1×1020 cm?3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.

Abstract: A nitride semiconductor laser diode has a quantum well layer consisting of a mixed crystal of Alx1Iny1Ga1-x1-y1N (x1?0.5, y1?0 and 1?x1?y1?0.5) in a group III nitride semiconductor multilayer structure having a major growth surface defined by a nonpolar plane. A cavity direction of the laser diode is perpendicular to a c-axis. The major growth surface of the group III nitride semiconductor multilayer structure may be defined by an m-plane. In this case, the cavity direction may be along an a-axis.

Abstract: There is provided a semiconductor laser device that enables flip-chip assembly by providing an embedding section around a mesa section, and has an improved emission lifetime. There is also provided a photoelectric converter and an optical information processing unit each having the semiconductor laser device. The semiconductor laser device includes: a mesa section including an active layer, and having a first electrode on a top surface; an embedding section covering the mesa section, and having a first connection aperture that reaches the first electrode; and a first wiring provided on the embedding section to be laid across the first connection aperture, the first wiring being electrically connected to the first electrode through the first connection aperture.

Abstract: A semiconductor laser device includes a semiconductor multilayer structure selectively grown on a substrate other than on a predetermined region of the substrate. The semiconductor multilayer structure includes an active layer, and has a stripe-shaped optical waveguide extending in a direction intersecting a front facet through which light is emitted. The active layer has an abnormal growth portion formed at a peripheral edge of the predetermined region, and a larger forbidden band width portion formed around the abnormal growth portion and having a larger width of a forbidden band than that of a portion other than the abnormal growth portion of the active layer. The optical waveguide is spaced apart from the abnormal growth portion and includes the larger forbidden band width portion at the front facet.

Abstract: A manufacturing method for manufacturing a surface-emitting laser device includes the steps of forming a laminated body in which a lower reflecting mirror, a resonator structure including an active layer, and an upper reflecting layer having a selective oxidized layer are laminated on a substrate; etching the laminated body to form a mesa structure having the selective oxidized layer exposed at side surfaces thereof; selectively oxidizing the selective oxidized layer from the side surfaces of the mesa structure to form a constriction structure in which a current passing region is surrounded by an oxide; forming a separating groove at a position away from the mesa structure; passivating an outermost front surface of at least a part of the laminated body exposed when the separating groove is formed; and coating a passivated part with a dielectric body.

Abstract: A surface emitting laser is provided which can control a beam shape and can provide higher efficiency and higher power. The surface emitting laser includes a gain region that is provided between a first semiconductor multilayer film reflection mirror and a second semiconductor multilayer film reflection mirror, which are arranged so as to oppose to each other, and that has a first active layer and a second active layer. The surface emitting laser has a current constriction layer for constricting an electric current which is injected into the first active layer and the second active layer. The first active layer and the second active layer have different active layer structures from each other.

Abstract: An optical device having a structured active region configured for one or more selected wavelengths of light emissions.

Abstract: A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallisation layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallisation layer opposite to the n-metallisation layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallisation layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallisation layer is larger than a width of the active region.

Abstract: A semiconductor device of the invention is formed so that n-type InP current blocking layers enter the inside of p-type InP cladding layers, i.e., the n-type current blocking layers ride over the upper part of the p-type InP cladding layers, so that a distance between the n-type InP current block layers composing a current blocking region is narrower than a width of the p-type cladding layers contacting with the n-type InP current blocking layers. Thereby, the semiconductor device whose leak current in the current blocking region may be reduced which permits high-output and high-temperature operations may be readily fabricated.

Abstract: Light emitting devices are provided comprising an active region interposed between n-type and p-type sides of the device and a hole blocking layer interposed between the active region and the n-type side of the device. The active region comprises an active MQW structure and is configured for electrically-pumped stimulated emission of photons in the green portion of the optical spectrum. The n-type side of the light emitting device comprises an n-doped semiconductor region. The p-type side of the light emitting device comprises a p-doped semiconductor region. The n-doped semiconductor region comprises an n-doped non-polar or n-doped semi-polar substrate. Hole blocking layers according to the present disclosure comprise an n-doped semiconductor material and are interposed between the non-polar or semi-polar substrate and the active region of the light emitting device. The hole blocking layer (HBL) composition is characterized by a wider bandgap than that of the quantum well barrier layers of the active region.

Abstract: An edge emitting semiconductor laser includes a semiconductor body having a wave guide area. The wave guide area comprises a lower cover layer, a lower wave guide layer, an active layer for generating laser radiation, an upper wave guide layer and an upper cover layer. The wave guide area also includes at least one structured laser radiation scattering area in which a lateral base laser radiation mode experiences less scattering losses than the radiation of higher laser modes.

Abstract: A multi-transverse-optical-mode heterojunction diode laser characterized by wavelength control of its output. The wavelength control or the control of multi-transverse-optical-modes may be achieved by, for example, selectively etching a layer to partially remove it and possibly followed by epitaxial regrowth, or by selectively converting a layer to an insulating material of a different refractive index, or by selectively modifying the optical properties of a layer by ion implantation, or by selectively modifying the optical properties of a layer by impurity-induced vacancy disordering.

Abstract: A vertical cavity surface emitting laser (VCSEL) (100) has a substrate (104), on which are disposed first and second distributed Bragg reflectors (DBRs) (106, 112), each DBR comprising a stack of layers of alternating refractive index, an active layer (108) disposed between the DBRs, and an aperture layer (110) disposed either between the DBRs or within one of the DBRs. The aperture layer (110) has a border (116) having an internal boundary with a plurality of indented portions defining one or more apertures. Such a VCSEL is easily manufacturable and provides a narrow bandwidth output, as well as mitigating at least some of the problems of prior art VCSELs. Mesa (102) may be etched to be non-circular and subsequent selective oxidation of aperture layer (110) results in a non-circular current confinement aperture (114) promoting higher-order lateral modes (LP21).

Abstract: It is an object of the invention to provide a VCSEL having both a high beam quality or a low M2-factor, respectively, and a reduced mirror thickness which improves the heat dissipation due to the reduced thickness and the production cost. It is suggested to employ a Bragg-reflector in combination with a metal reflector terminating the distal side of the Bragg-reflector as seen from the laser cavity, wherein the metal reflector layer is localized at the center around the optical axis.

Abstract: A directly driven laser includes multiple contacts, with at least one of the contacts for injecting current into the laser such that the laser reaches at least a lasing threshold and at least one of the contacts for providing a data signal to the laser. In some embodiments a differential data signal is effectively provided to a front and a rear section of the laser, while lasing threshold current is provided to a central portion of the laser.

Abstract: A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array.

Abstract: The invention includes a single chip having multiple different devices integrated thereon for a common purpose. The chip includes a substrate having a peripheral area, a mid-chip area, and a central area. A plurality of FETs are formed in the peripheral area with each FET having a layer of single crystal rare earth material in at least one of a conductive channel, a gate insulator, or a gate stack. A plurality of photonic devices including light emitting diodes or vertical cavity surface emitting lasers are formed in the mid-chip area with each photonic device having an active layer of single crystal rare earth material. A plurality of photo detectors are formed in the central area.

Abstract: Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide.

Abstract: A laser system having separately electrically operable cavities for emitting modulated narrow linewidth light with first, second and third mirror structures separated by a first active region between the first and the second and by a second active region between the second and the third. The second mirror structure has twenty of more periods of mirror pairs.

Abstract: A semiconductor light-emitting device configured to decrease a leakage current in a current-blocking layer and including a light-emitting portion composed of a first compound semiconductor layer having a first conductivity type, an active layer, and a second layer having a second conductivity type, and a current-blocking layer in contact with the side of the light-emitting portion and composed of a third layer having the first conductivity type and a fourth layer having the second conductivity type.

Abstract: A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser integrated in a semiconductor material with various reflectors and a diffractive lens. The edge-emitting laser has a first section comprising an active MQW region, a second section comprising a passive region and a third section comprising a semi-insulating or un-doped semiconductor bulk layer. This configuration ensures that the injection current will pass through all of the layers of the active region, thereby preventing the occurrence of optical losses due to un-injected areas of the MQW active region. In addition, the inclusion of the passive region ensures that there is no current passing through the interface between the active MQW region and the regrown semiconductor bulk layer. The latter feature improves performance and device reliability.

Abstract: A group-III nitride semiconductor laser device comprises a laser structure including a support base and a semiconductor region, and an electrode provided on the semiconductor region of the laser structure. The support base comprises a hexagonal group-III nitride semiconductor and has a semipolar primary surface, and the semiconductor region is provided on the semipolar primary surface of the support base. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer. The first cladding layer, the second cladding layer, and the active layer are arranged along a normal axis to the semipolar primary surface. The active layer comprises a gallium nitride-based semiconductor layer.

Abstract: A light emission device includes: first and second clad layers sandwiching an active layer; a first electrode connected with the first clad layer; and second electrodes connected with the second clad layer, at least part of the active layer forms gain areas corresponding to the second electrodes, the gain areas extend from a first side to a second side of the active layer while inclined to a vertical of the first side, at least first and second gain areas form a set of gain areas and a plurality of sets are provided, the first and second gain areas in each set are disposed perpendicular to a direction extending from the first side to the second side, the second electrodes above the first gain areas are interconnected by a first common electrode, and the second electrodes above the second gain areas are interconnected by a second common electrode.

Abstract: A surface plasmon-generating apparatus includes an active layer including an n-type region formed on one side and a p-type region formed on the other side, the n-type region and the p-type region being in contact with each other to form a pn junction therebetween; a first barrier layer in contact with a first surface of the active layer; a second barrier layer in contact with a second surface of the active layer, the second surface being opposite the first surface; and a metal body disposed above the pn junction of the active layer with the second barrier layer and an insulating layer therebetween.

Abstract: A vertical cavity surface emitting laser includes a layer-stack structure including, on a substrate, a transverse-mode adjustment layer, a first multilayer reflecting mirror, an active layer having a light emission region, and a second multilayer reflecting mirror in order from the substrate side, and including a current confinement layer in which a current injection region is formed in a region corresponding to the light emission region in the first multilayer reflecting mirror, between the first multilayer reflecting mirror and the active layer, between the active layer and the second multilayer reflecting mirror, or in the second multilayer reflecting mirror. In the transverse-mode adjustment layer, reflectance at an oscillation wavelength in the region opposite to a center of the light emission region is higher than that at an oscillation wavelength in the region opposite to an outer edge of the light emission region.