Abstract: A nitride semiconductor laser device is provided herein that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper cladding layer; and a pad electrode which is stacked above the low dielectric constant insulating film.

Abstract: A distributed-feedback laser with wavelength accuracy and spectral purity. An array of lasers with highly reflecting/anti reflecting facets is fabricated on a single chip with controlled variations, in for example laser gratings. A laser that best meets predetermined specifications is selected and configured for use.

Abstract: Included are, a module fixing body having a plurality of mounting holes into which laser modules are fitted and accommodated, respectively; an electricity-supplying member having an end provided with electricity-supplying terminals, which are connected to electricity-receiving terminals of the laser module accommodated in the mounting hole; and a cooling member that cools each of the laser modules. A groove in which the electricity-supplying member is accommodated is formed in a surface of the module fixing body, and the cooling member is closely arranged on the surface of the module fixing body.

Abstract: A high-brightness laser module is configured with a beam-compression unit capable of reducing a diameter of parallel light beams which are emitted by respective spaced apart individual laser diodes. The module further has an objective lens configured to losslessly launch the light with the reduced diameter into a fiber.

Abstract: A surface-emitting laser array includes a plurality of surface-emitting laser elements. Each surface-emitting laser element includes a first reflection layer formed on a substrate, a resonator formed in contact with the first reflection layer and containing an active layer, and a second reflection layer formed over the first reflection layer and in contact with the resonator. The second reflection layer contains a selective oxidation layer. The first reflection layer contains on the active layer side at least a low refractive index layer having an oxidation rate equivalent to or larger than an oxidation rate of a selective oxidation layer contained in the second reflection layer. The resonator is made of an AlGaInPAs base material containing at least In. A bottom of a mesa structure is located under the selective oxidation layer and over the first reflection layer.

Abstract: The present invention discloses a method for fabricating a heat-resistant, humidity-resistant oxide-confined vertical-cavity surface-emitting laser (VCSEL) by slowing down the oxidizing rate during a VCSEL oxidation process to thereby reduce stress concentration of an oxidation layer and by preventing moisture invasion using a passivation layer disposed on a laser window. The VCSEL device thus fabricated is heat-resistant, humidity-resistant, and highly reliable. In a preferred embodiment, the oxidation process takes place at an oxidizing rate of less than 0.4 ?m/min, and the passivation layer is a SiON passivation layer.

Abstract: Embodiments comprise laser emitter devices that generate a collimated beam of light the intensity or amplitude of which may be varied so as to carry data signals at a high rate of efficiency, and that is less sensitive to alignment of the detector, and detector systems for detecting the same collimated beam and reading the data carried in the beam of light.

Abstract: A vertical-cavity surface-emitting laser array includes a substrate having an element forming area, multiple columnar structures formed in the element forming area on the substrate, and at least one metal wire formed adjacent to the multiple columnar structures. Each columnar structure includes a lower semiconductor reflector of a first conductivity type, an upper semiconductor reflector of a second conductivity type, and an active region formed between the lower semiconductor reflector and the upper semiconductor reflector. The columnar structure emits light in a direction perpendicular to the substrate. The at least one metal wire has a distortion applying segment that extends in the same direction relative to the multiple columnar structures.

Abstract: Vertical Cavity Surface Emitting Laser (VCSEL) arrays with vias for electrical connection are disclosed. A Vertical Cavity Surface Emitting Laser (VCSEL) array in accordance with one or more embodiments of the present invention comprises a plurality of first mirrors, a plurality of second mirrors, a plurality of active regions, coupled between the plurality of first mirrors and the plurality of second mirrors, and a heatsink, thermally and mechanically coupled to the second mirror opposite the plurality of active regions, wherein an electrical path to at least one of the plurality of second mirrors is made through a via formed through a depth of the plurality of second mirrors, and a plurality of VCSELs in the VCSEL array are connected in series.

Abstract: A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate includes a p-side electrode surrounding an emitting area on an emitting surface to emit the laser light; and a transparent dielectric film formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part. The outside area within the emitting area has shape anisotropy in two mutually perpendicular directions.

Abstract: A system comprising a multiplicity of quantum dot lasers disposed on a back surface of a control circuit, wherein each of the quantum dot lasers produces coherent light; a multiplicity of micro-lens collimators, each micro-lens collimator secured to a corresponding quantum dot laser, where light generated by the quantum dot laser passes through the fiber and exits at the tip; a diffraction grating, wherein the light from each of the micro-lens collimators is directed to the diffraction grating; and wherein the coherent light leaving the diffraction grating is a high powered optical light.

Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

Abstract: A diode-laser bar stack includes a plurality of diode-laser bars having different temperature dependent peak-emission wavelengths. The stack is arranged such that the bars can be separately powered. This allows one or more of the bars to be “on” while others are “off”. A switching arrangement is described for selectively turning bars on or off, responsive to a signal representative of the temperature of the diode-laser bar stack, for providing a desired total emission spectrum.

Abstract: A manufacturing method for manufacturing a surface-emitting laser device includes the steps of forming a laminated body in which a lower reflecting mirror, a resonator structure including an active layer, and an upper reflecting layer having a selective oxidized layer are laminated on a substrate; etching the laminated body to form a mesa structure having the selective oxidized layer exposed at side surfaces thereof; selectively oxidizing the selective oxidized layer from the side surfaces of the mesa structure to form a constriction structure in which a current passing region is surrounded by an oxide; forming a separating groove at a position away from the mesa structure; passivating an outermost front surface of at least a part of the laminated body exposed when the separating groove is formed; and coating a passivated part with a dielectric body.

Abstract: A wafer-level packaged optical subassembly includes: a substrate element, the substrate element including a top layer and a base layer being bonded with the top layer; a top window cover being bonded with the top layer of the substrate element; and a plurality of active optoelectronic elements disposed within the substrate element. At least one primary cavity is defined in the substrate element by the top layer and the base layer, and configured for accommodating the active optoelectronic elements. A plurality of peripheral cavities are defined around the at least one primary cavity as alignment features for external opto-mechanical parts.

Abstract: A radiation-emitting thin film semiconductor chip is herein described which comprises a first region with a first active zone, a second region, separated laterally from the first region by a space, with a second active zone which extends parallel to the first active zone in a different plane, and a compensating layer, which is located in the second region at the level of the first active zone, the compensating layer not containing any semiconductor material.

Abstract: A surface-emitting laser includes a substrate; a lower semiconductor multilayer film reflector disposed on the substrate; a resonator structure including an active layer and disposed on the lower semiconductor multilayer film reflector; and an upper semiconductor multilayer film reflector disposed on the resonator structure. The second semiconductor multilayer film reflector includes a confinement structure in which a current passage region is surrounded by an oxidized portion of a selectively oxidized layer containing aluminum. An emission region includes a central portion and a peripheral portion, the peripheral portion being covered with a transparent dielectric film whose reflectivity is lower than a reflectivity of the central portion. The selectively oxidized layer has a thickness in a range from 30 nm to 40 nm. The temperature at which an oscillation threshold current is minimized is 60° C. or lower.

Abstract: An optical semiconductor device includes: a semiconductor substrate; a semiconductor laser part on the semiconductor substrate and having a vertical ridge; and an optical modulator part on the semiconductor substrate, having an inverted-mesa ridge, and modulating light emitted by the semiconductor laser part.

Abstract: A vertically integrated optical phased array has an array of a plurality of vertical cavity surface emitting lasers disposed in an aperiodic arrangement thereof, the plurality of vertical cavity surface emitting lasers having light emitting ports disposed parallel to one another. An array of a plurality of vertical cavity phase modulators disposed in the same aperiodic arrangement as the array of the plurality of vertical cavity surface emitting lasers, with individual modulators of said array of a plurality of vertical cavity phase modulators each being disposed in optical alignment with an injection port of a corresponding one of said plurality of vertical cavity surface emitting lasers.

Abstract: It is an object of the invention to simplify the power stabilization of laser diodes. For this purpose, a laser device comprising a die and thereon a first laser diode and a second laser diode is provided. The second laser diode has a structure or element that avoids lasing if a supply voltage is applied that is sufficient for the first semiconductor laser cavity to emit laser light.

Abstract: A chip array structure for laser diodes, formed on an active surface of a semiconductor chip produced from a semiconductor process includes a plurality of light-emitting elements in an array arrangement, at least one insulation wall, at least two wire bond areas and a plurality of connection electrodes. The insulation wall separates the light-emitting elements into at least two light-emitting districts. The wire bond areas are positioned respective to the corresponding light-emitting districts. The connection electrodes electrically couple the wire bond areas with the corresponding light-emitting districts. The wire bond areas have independent electrodes, and the light-emitting districts are electrically isolated by the insulation wall.

Abstract: There is provided a semiconductor light-emitting device including a temperature detecting section which is allowed to accurately estimate an element temperature. The semiconductor light-emitting device includes: one or a plurality of surface-emitting semiconductor light-emitting sections and one or a plurality of semiconductor temperature detecting sections on a semiconductor substrate, the surface-emitting semiconductor light-emitting sections emitting light in a direction normal to the semiconductor substrate, the semiconductor temperature detecting sections not emitting light to outside. The semiconductor light-emitting sections and the semiconductor temperature detecting sections have a PN junction or a PIN junction in a direction normal to the semiconductor substrate.

Abstract: Optical pump modules using VCSEL arrays are provided to pump optical gain media for achieving high power laser output in CW, QCW and pulse operation modes for operation. Low divergence and symmetric far-field emission from VCSELs are particularly suitable for compact arrays. VCSEL arrays configured as laser pump modules are operable at high temperatures with practically no degradation over a long period of time. VCSEL pump modules are adaptable for side- or end-pumping configurations to pump high power lasers in CW, QCW and pulse mode. Power output from VCSEL pump modules is scalable. Incorporating microlens arrays with the VCSEL arrays improve brightness of the pump modules. High power and high temperature operation of VCSEL modules make it suitable for making compact high power solid state lasers that are operable in small spaces such as, ignition of internal combustion engines, stationary power generation engines and pulsed detonation engines.

Abstract: A high power laser source comprises a bar of laser diodes having a first coefficient of thermal expansion CTEbar on a submount having a second coefficient CTEsub and a cooler having a third coefficient CTEcool. The submount/cooler assembly shows an effective fourth coefficient CTEeff differing from CTEbar. This difference leads to a deformation of the crystal lattice of the lasers' active regions by mechanical stress. CTEeff is selected to be either lower than both CTEbar and CTEcool or is selected to be between CTEbar and CTEcool. The submount may either comprise layers of materials having different CTEs, e.g., a Cu layer of 10-40 ?m thickness and a Mo layer of 100-400 ?m thickness, or a single material with a varying CTEsub. Both result in a CTEsub varying across the submount's thickness.

Abstract: A method of making a semiconductor optical integrated device includes the steps of forming, on a substrate, a plurality of semiconductor integrated devices including a first optical semiconductor element having a first bonding pad and a second optical semiconductor element; forming a plurality of bar-shaped semiconductor optical integrated device arrays by cutting the substrate, each of the semiconductor optical integrated device arrays including two or more semiconductor optical integrated devices; alternately arranging the plurality of semiconductor optical integrated device arrays and a plurality of spacers in a thickness direction of the substrate so as to be fixed in place; and forming a coating film on a facet of the semiconductor optical integrated device array. Furthermore, the spacer has a movable portion facing the first bonding pad, the movable portion protruding toward the first bonding pad and being displaceable in a protruding direction.

Abstract: A semiconductor laser module includes a laser diode array, an optical fiber array, a fiber array fitting for fixing the optical fiber array, a casing, and a support fitting for fixing the fiber array fitting and casing. The fiber array fitting and support fitting have a first contact section that is in line-contact or surface-contact with the plane section parallel with the light emission surface of the laser diode array, and are laser-welded and fixed to each other at the first contact section. The support fitting and casing have a second contact section that is in line-contact or surface-contact with the plane section vertical to the light emission surface of the laser diode array, and are laser-welded and fixed to each other at the second contact section.

Abstract: An optoelectronic (OE) package or system and method for fabrication is disclosed which includes a silicon layer with wiring. The silicon layer has an optical via for allowing light to pass therethrough. An optical coupling layer is bonded to the silicon layer, and the optical coupling layer includes a plurality of microlenses for focusing and or collimating the light through the optical via. A plurality of OE elements are coupled to the silicon layer and electrically communicating with the wiring. At least one of the OE elements positioned in optical alignment with the optical via for receiving the light. A carrier is interposed between electrical interconnect elements. The carrier is positioned between the wiring of the silicon layer and a circuit board and the carrier is electrically connecting first interconnect elements connected to the wiring of the silicon layer and second interconnect elements connected to the circuit board.

Abstract: A light emitting device has: a dispersion light source wherein a plurality of semiconductor laser bars are arranged; and a drive circuit which makes the dispersion light source output at least one pulsed beam by supplying at least one drive pulse to the dispersion light source. In the dispersion light source, a plurality of semiconductor laser bars are arranged on a base, and furthermore, heat dissipating plates are arranged between the semiconductor laser bars. The pulse width of the pulsed beam outputted from the dispersion light source is longer than 1 femtosecond but shorter than 0.25 second, and the energy of the single pulsed beam is less than 66.8 ?[J].

Abstract: A parallel optical transceiver module is provided that has a balanced laser driver arrangement. The balanced laser driver arrangement of the invention includes at least two laser diode driver ICs, which preferably are located on opposite sides of a laser diode IC. Each laser diode driver IC drives a subset (e.g., half) of the total number of laser diodes of the laser diode IC. Because each laser diode driver IC drives a subset of the total number of laser diodes of the laser diode IC, the pitch (i.e., distance) between the high-speed signal pathways within the laser diode driver ICs can be increased. Increasing the pitch between the high-speed signal pathways provides several advantages, including, for example, reducing the potential for electrical cross-talk and inductive coupling between adjacent wire bonds that connect the output driver pads on the driver IC to the respective input pads on the laser diode IC.

Abstract: A semiconductor laser module includes a semiconductor laser unit and a light selecting unit. The semiconductor laser unit includes a semiconductor laser substrate and a plurality of distributed reflector semiconductor laser devices formed on the semiconductor laser substrate in an array. Each of the distributed reflector semiconductor laser devices is configured to emit a laser light of a different wavelength from an output facet. The light selecting unit includes a light selecting device substrate and a light selecting device formed on the light selecting device substrate. The light selecting device is configured to selectively output a laser light emitted from a distributed reflector semiconductor laser device. The semiconductor laser unit and the light selecting unit are attached to each other in such a manner that the light selecting device is optically coupled to the distributed reflector semiconductor laser devices.

Abstract: A semiconductor laser assembly has at least one semiconductor laser which is designed to emit laser radiation through an exit area and at least one further area, the further area being a part of a surface of the semiconductor laser and/or of the semiconductor laser assembly and the further area is developed to be reflecting to the radiation of at least one specifiable wavelength range. For this purpose, a reflecting metal layer is applied, for example. The semiconductor laser having a laser layer is able to be fastened to a carrier element with the aid of a solder layer.

Abstract: Provided is a two-dimensional photonic crystal surface emitting laser having an active layer for generating light of a predetermined wavelength range by an injection of electric current and a two-dimensional photonic crystal layer provided on one side of the active layer, the layer having a plate-shaped base member in which modified refractive index areas whose refractive index differs from that of the base member are arranged.

Abstract: An array of vertical-cavity surface emitting lasers (VCSELs) may be fabricated with very high fill-factors, thereby enabling very high output power densities during pulse, quasi-continuous wave (QCW), and continuous wave (CW) operation. This high fill-factor is achieved using asymmetrical pillars in a rectangular packing scheme as opposed prior art pillar shapes and packing schemes. The use of asymmetrical pillars maintains high efficiency operation of VCSELs by maintaining minimal current injection distance from the metal contacts to the laser active region and by maintaining efficient waste heat extraction from the VCSEL. This packing scheme for very high fill-factor VCSEL arrays is directly applicable for next generation high-power, substrate removed, VCSEL arrays.

Abstract: The present invention relates to the packaging of high power laser(s) in a surface mount technology (SMT) configuration at low-cost using wafer-scale processing. A reflective sidewall is used to redirect the output emission from edge-emitting lasers through an optical element (e.g., a diffuser, lens, etc.). A common electrical pad centered inside the package provides p-side connection to multiple laser diodes (i.e. for power scalability). Thick plating (e.g. 75 um to 125 um) with a heat and electrically conductive material, e.g. copper, on a raised bonding area of a substrate provides good heat dissipation and spreading to the substrate layer during operation. The composite CTE of the substrate layer, e.g. AlN, and the heat/electrical conductive plating, e.g. Cu, substantially matches well with the laser substrates, e.g. GaAs-based, without the requirement for an additional submount.

Abstract: A laser diode arrangement having a multiplicity of laser diodes (11) arranged along side one another, comprises a heat sink (9) on which the laser diodes (11) are mounted and a cooling body (1) which is in intimate contact with the heat sink (9), wherein the cooling body (1) has two coolant channels (2; 3), which run parallel to the longitudinal axis of the heat sink (9) and are embodied as a feed channel (2) and as a discharge channel (3) for a coolant. According to the invention a multiplicity of cooling channels (5, 7; 6, 8) lying along side one another are provided, which branch off from the feed channel (2), lead past the heat sink (9), and open into the discharge channel (3), wherein cooling channels (5, 7; 6, 8) lying directly alongside one another branch off at different locations of the periphery of the feed channel (2) and of the discharge channel (3).

Abstract: There is provided an optical interconnection system including a plurality of semiconductor integrated devices each including a surface emitting laser array device including a plurality of surface emitting laser devices each emitting an output laser signal light of a different wavelength modulated based on an input modulated signal, a silicon optical waveguide that guides output laser signal lights emitted from the surface emitting laser devices of each of the semiconductor integrated devices to another semiconductor integrated device, a plurality of optical couplers respectively corresponding to the semiconductor integrated devices and guiding the output laser signal lights to the silicon optical waveguide, and a plurality of optical splitters respectively corresponding to the semiconductor integrated devices, receiving the output laser signal lights guided by the silicon optical waveguide, and inputting an input laser signal light to a corresponding one of the semiconductor integrated devices.

Abstract: A surface-emitting laser array includes a plurality of surface-emitting laser elements. Each surface-emitting laser element includes a first reflection layer formed on a substrate, a resonator formed in contact with the first reflection layer and containing an active layer, and a second reflection layer formed over the first reflection layer and in contact with the resonator. The second reflection layer contains a selective oxidation layer. The first reflection layer contains on the active layer side at least a low refractive index layer having an oxidation rate equivalent to or larger than an oxidation rate of a selective oxidation layer contained in the second reflection layer. The resonator is made of an AlGaInPAs base material containing at least In. A bottom of a mesa structure is located under the selective oxidation layer and over the first reflection layer.

Abstract: A disclosed multi-beam laser power control circuit includes a light receiving element receiving power output from semiconductor lasers to control output power of a semiconductor laser array having plural semiconductor lasers, automatic power control circuits (APC circuits) controlling emission power output from semiconductor lasers based on received corresponding automatic power control execution signals so as to be set to predetermined emission power based on output from the light receiving element, and APC execution signal input terminals inputting the corresponding automatic power control execution signals, wherein, when plural APC execution signals input to the corresponding APC execution signal input terminals are overlapped, the automatic power control circuits (APC circuits) to be preferentially operated is determined based on input timings of the APC execution signals and operated.

Abstract: A method of manufacturing a surface-emitting laser that allows precise alignment of the center position of a surface relief structure and that of a current confinement structure and formation of the relief structure by means of which a sufficient loss difference can be introduced between the fundamental transverse and higher order transverse mode. Removing the dielectric film on the semiconductor layers and the first-etch stop layer along the second pattern, using a second- and third-etch stop layer are conducted in single step after forming the confinement structure. The relief structure is formed by three layers including a lower, middle and upper layer, and total thickness of three layers is equal to the optical thickness of an odd multiple of ¼ wavelength (?: oscillation wavelength, n: refractive index of the semiconductor layer). The layer right under the lower layer is the second-etch stop layer and the first-etch stop layer is laid right on this etch stop layer.

Abstract: The aberration takes place according to the height of the image because the laser light tilts from the optical axis when it enters to the object lens in the optical pickup device which is equipped with a laser diode for BD and the monolithic laser diode capable of irradiating laser lights with two different wavelengths for DVD and CD as one package to read the signal by single object lens and single optical system. This is because the light sources of the three lights with different wavelengths are away from each other in the optical pickup device. The emission point of the laser diode for BD is formed at the location shifted from the center of the chip. The laser diode for BD is disposed adjacent to the monolithic laser diode capable of irradiating laser lights with two wavelengths for DVD and CD to make the emission point closer to the monolithic laser diode. The sizes of these two laser diodes is minimized by employing half dicing during the cleavage processing for separating the chips.

Abstract: An apparatus for providing a light beam has a solid-state laser to emit a polarized input laser light beam that has a first aspect ratio of etendue R1. First and second cylindrical lenses collimate the light along orthogonal directions. An edge of a bisecting reflective surface splits the laser light beam into a first portion directed along a first beam path and a second portion along a second beam path, wherein the first and second beam paths each contain emitted light from the solid-state laser. One or more folding reflective surfaces are disposed along the first or second or both beam paths. A polarization rotator rotates polarization of the light along the second beam path. A polarization combiner combines light from the first and second beam paths to form an output beam, wherein the output beam has a second aspect ratio of etendue R2 not equal to R1.

Abstract: A surface emitting laser array includes a light emitting unit having a lower reflection mirror, a resonator structure including an active layer, and an upper reflection mirror laminated on a substrate; an electrode for the light emitting unit; a wiring member that establishes electrical connection between the light emitting unit and the electrode; and the substrate on which more than one of the light emitting units, the electrodes, and the wiring members are arranged. The light emitting unit has anisotropic internal stress, and the distance between the center of a first light emitting unit and the center line of the corresponding wiring member is arranged to be different from the distance between the center of a second light emitting unit and the center line of the corresponding wiring member so that variations in the polarization directions of the light emitting units may be within a predetermined range.

Abstract: A system for cooling a semiconductor light source bar during burn-in testing includes a fixture for holding the semiconductor light source bar, and the fixture including a housing having a water inlet channel and a water outlet channel communicated with the water inlet channel; a first water tank with coolant connected with the water inlet channel; a second water tank connected with the water outlet channel; and a pumping device at least connected with the water outlet channel for pumping the coolant from the first water tank to the second water tank, thereby rushing a bottom of the semiconductor light source bar to lower the temperature thereof. The system can disperse the local heat generated during burn-in testing and uniform the local temperature of the semiconductor light source bar, thereby maintaining a proper temperature during burn-in testing and improving the heat stability of the heat assist magnetic recording head.

Abstract: Within a semiconductor laser device, mounting a semiconductor laser element array of multi-beam structure on a sub-mount, the semiconductor laser element array of multi-beam structure comprises one piece of a semiconductor substrate 11; a common electrode 1, which is formed on a first surface of the semiconductor substrate; a semiconductor layer 2, which is formed on the other surface of the semiconductor substrate, and has a plural number of light emitting portions 7 within an inside thereof; a plural number of anode electrodes 3 of a second conductivity type, which are formed above the plural number of light emitting portions, respectively; and a supporting portion 25, which is provided outside a region of forming the light emitting portions, wherein on one surface of the sub-mount is connected an electrode 3 of the semiconductor laser element array through a solder 4, and that solder 4 is formed to cover a supporting portion and an electrode neighboring thereto, and further on the electrode 3 is formed a g

Abstract: A diode laser having a beam-forming device and a method for producing it are described. The diode laser includes at least one diode laser bar, the diode laser bar having a multitude of emitters, the emitters being disposed next to each other in the direction of their longitudinal axes. The diode laser includes a beam-forming device assigned to the diode laser bar, for the laser beam emerging from the diode laser bar, the beam-forming device having a light-guide device having a plurality of fibers, into which the laser beam is coupled. The maximum thickness of the optical fibers at their end facing the diode laser bar is considerably smaller than their width.

Abstract: A semiconductor light emitting device downsized by devising arrangement of connection pads is provided. A second light emitting device is layered on a first light emitting device. The second light emitting device has a stripe-shaped semiconductor layer formed on a second substrate on the side facing to a first substrate, a stripe-shaped p-side electrode supplying a current to the semiconductor layer, stripe-shaped opposed electrodes that are respectively arranged oppositely to respective p-side electrodes of the first light emitting device and electrically connected to the p-side electrodes of the first light emitting device, connection pads respectively and electrically connected to the respective opposed electrodes, and a connection pad electrically connected to the p-side electrode. The connection pads are arranged in parallel with the opposed electrodes.

Abstract: An optoelectronic (OE) package or system and method for fabrication is disclosed which includes a silicon layer with a wiring layer. The silicon layer has an optical via for allowing light to pass therethrough. An optical coupling layer is bonded to the silicon layer, and the optical coupling layer includes a plurality of microlenses for focusing and or collimating the light through the optical via. One or more first OE elements are coupled to the silicon layer and electrically communicating with the wiring. At least one of the first OE elements positioned in optical alignment with the optical via for receiving the light. A second OE element embedded within the wiring layer. A carrier may be interposed between electrical interconnect elements and positioned between the wiring layer and a circuit board.

Abstract: A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate includes a p-side electrode surrounding an emitting area on an emitting surface to emit the laser light; and a transparent dielectric film formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part. The outside area within the emitting area has shape anisotropy in two mutually perpendicular directions.

Abstract: This semiconductor laser apparatus includes a base, a plurality of electrodes arranged along a first direction on an upper surface of the base, a plurality of semiconductor laser devices bonded to respective upper surfaces of the plurality of electrodes, emitting laser beams in a second direction, and a photodetector having a photosensitive surface arranged in a region of the base in a third direction relative to the plurality of semiconductor laser devices. An electrode arranged in a position other than end portions in the first direction and a fourth direction, of the plurality of electrodes has an extraction wiring portion arranged on the photosensitive surface of the photodetector.

Abstract: A lock in pinned photodiode photodetector includes a plurality of output ports which are sequentially enabled. Each time when the output port is enabled is considered to be a different bin of time. A specified pattern is sent, and the output bins are investigated to look for that pattern. The time when the pattern is received indicates the time of flight A CMOS active pixel image sensor includes a plurality of pinned photodiode photodetectors that use a common output transistor. In one configuration, the charge from two or more pinned photodiodes may be binned together and applied to the gate of an output transistor.