Abstract: To provide a thin film forming method and apparatus that can automatically form thin films having constant optical properties with high reproducibility Antireflection films are deposited on lenses 2a that are held by a coating dome 2 by vaporizing an evaporation material 4 by using an electron gun 3 The power to be applied to the electron gun 3 is controlled so that a transmission or reflection light quantity value that is measured at each time point by an optical film thickness meter 10 becomes equal or approximately equal to a standard light quantity value stored in a standard light quantity value data storing means

Abstract: Systems and methods of monitoring thin film deposition are described. In one aspect, a thin film deposition sensor includes an acoustical resonator (e.g., a thin film bulk acoustical resonator) that has an exposed surface and is responsive to thin film material deposits on the exposed surface. A substrate clip may be configured to attach the thin film deposition sensor to a substrate. A transceiver circuit may be configured to enable the thin film deposition sensor to be interrogated wirelessly. A method of monitoring a thin film deposition on a substrate also is described.

Abstract: An apparatus for depositing thin films on a plurality of substrates has a vacuum chamber, a source of the material or materials to be deposited as the thin film, a source of energy for causing the material to be vaporized, and mechanical apparatus for imparting super-planetary and planetary motion to each substrate while the substrate is exposed to the vapors of the material. When a predetermined thickness of the film on any given substrate is reached the super-planetary motion is halted and only planetary motion and spinning are continued for the given substrate. During this process the thickness of the film being deposited is monitored accurately by an optical instrument having a linear axis of measurement which coincides with the center of the orbiting planetary motion of the substrate and is on the substrate itself.

Abstract: A method and system for controlling the bombardment of a wall (100) of an electrically shielded RF (ESRF) source to control wall deposition. By measuring thickness of a deposit on a wall (100), the method and system can determine how to control the bias voltage applied to the bias shield (105) of the ESRF source. Thickness can be measured using any measurement technique (e.g., microwave, eddy current probe, capacitive probe and interferometric).

Abstract: A process and system are provide for determining the acceptability of a fluid dispense such as a discrete volume of fluid used to coat a substrate. The fluid dispense is exposed to an energy source and the energy transmitted by the fluid dispense is detected to determine the shape of the fluid dispense. The fluid dispense shape and the timing of the beginning and end of the dispense are compared to previously generated standard dispense profiles and used to determine the acceptability of the shape and/or timing of the fluid dispense. The output from the sensor is used to control further processing of the substrate.

Abstract: A screen printing apparatus prints cream solder through a pattern hole of a mask plate, to which a substrate is brought into contact, by sliding a squeegee head. The mask plate, to which the substrate is positioned, is three-dimensionally measured from its above, thereby detecting a positioned status. Based on the detection result, the positioned status is corrected by driving a substrate-positioning-section. As a result, the substrate is always exactly positioned to the mask plate, and quality print is thus maintainable.

Abstract: Thin-film interference filters are constructed with a generalized pattern of layers differing in both thickness and refractive index to produce spectral responses appropriate for adjusting optical power among a plurality of different wavelength channels. Each of the layers is composed of unit sub-layers having thicknesses equal to a quarter-wavelength thickness of a monitoring beam. Interference fluctuations of the monitoring beam associated with the deposition of the unit sub-layers enable a gain-flattening filter to achieve greater manufacturing accuracy by exploiting self-correcting effects of “turning point monitoring” techniques.

Abstract: A method of regulating a high temperature gas phase process on the basis of a measurement curve determined by means of infrared spectroscopy, the curve having at least one spectral peak which is characteristic for the regulation of the process and which deviates from a background of the measurement curve. A straight line synthetic background is calculated directly from the measurement curve on the basis of initial and end values of the characteristic spectral peak, and the peak is integrated over the straight line, or a maximum height of the peak over the straight line, or another characteristic value of the peak relative to the straight line is utilized. The process is regulated based on measured peak and the synthetic background.

Abstract: A processing system for processing a substrate with a plasma comprises a processing chamber configured for containing a plasma and a substrate support. Electrodes are coupled to the substrate support and an RF power source is coupled to each of the electrodes for biasing the electrodes to create a DC bias on a substrate positioned on the supporting surface. A first comparator having first and second inputs is electrically coupled to one of the electrodes with an isolating device being coupled between the first and second inputs to isolate the first input from the bias on the one electrode. The comparator has an output reflective of a voltage difference between the first and second inputs. A second comparator has a first input coupled to the first electrode and a second input coupled to the second electrode, and has an output reflective of a voltage difference between the first and second inputs resulting from the bias difference between the first and second electrodes.

Abstract: A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a nozzle adapted to apply a predetermined volume of developer material on a photoresist material layer along a linear path having a length approximately equal to the diameter of the photoresist material layer. A movement system moves the nozzle to a first position offset from a central region of the photoresist material layer for applying a first predetermined volume of developer material to the photoresist material layer while the developer material is spin coated. The movement system also moves the nozzle to a second position offset from the central region for applying a second predetermined volume of developer material to the photoresist material layer while the developer is spin coated. The first position is located on an opposite side of the central region with respect to the second position.

Abstract: Disclosed is a method, for forming a film locally on a substrate, which comprises the steps of detecting the state of the substrate employing the obtained result to calculate positional information concerning a plurality of locations at which the material for the film is to be provided to form the film, and providing the material for the film at the plurality of locations based on the positional information that is obtained for the plurality of locations.

Abstract: A reaction chamber of the type used to create a reaction at a surface of a substrate disposed within the reaction chamber. A transmitter produces a transmitted beam having first characteristics, where the transmitter is disposed outside of the reaction chamber. A view port is disposed in a boundary wall of the reaction chamber, where the view port is formed of a material that is transparent at least in part to the transmitted beam. The transmitter, the view port, and the substrate are aligned such that the transmitted beam is directable to and reflected at least in part from the surface of the substrate, thereby producing a reflected beam having second characteristics. A receiver is disposed outside of the reaction chamber, and the receiver receives the reflected beam from the surface of the substrate through the view port. The receiver also senses the second characteristics of the reflected beam and reports the second characteristics.

Abstract: Method for manufacturing a workpiece by a vacuum treatment process includes providing a vacuum treatment system with first second parts in a vacuum chamber. Either a sensor or an adjusting element with first signal connection is mounted on the second part. An electronic unit in the chamber has a reference potential and a second electric signal connection. The first part is connected to a system reference potential. A workpiece goes into the chamber and the method includes operating the second part at a further electric potential different from the system reference potential by at least 12 V. The method includes connecting the first electric signal connection to the second electric signal connection and maintaining the reference connection during operation on the further electric potential by metallically connecting the reference connection to the second part.

Abstract: A resonant cavity frequency sensing device is used to sense the moisture content of a substrate. Data obtained by the sensing device can be used in a feedback loop in the apparatus employing the device, to help control the operation of the apparatus in order to obtain consistent results. The sensor may employ one pair of sensing plates or an array of pairs of sensing plates to obtain data from each part of the substrate. In an illustrated embodiment, the device is used to monitor and control dip uptake in a fabric adhesive dipping process.

Abstract: A method for controlling the deposition of an organic layer in making an organic light-emitting device includes depositing at a deposition zone organic material forming a layer of the organic light-emitting device and providing a movable sensor which, when moved into the deposition zone and is being coated during the depositing step, provides a signal representing the deposition rate and thickness of the organic material forming the layer. The method also includes controlling the deposition of the organic material in response to the signal to control the deposition rate and thickness of the deposited organic material forming the layer, moving the movable sensor from the deposition zone to a cleaning position, and removing organic material from the movable sensor to permit reuse of the movable sensor.

Abstract: Process for continuous determination of the optical layer thickness of coatings, which are applied on both sides of the spherical surfaces of concave convex lenses having different spherical radii R1 and R2. In this process a ray of light is beamed eccentrically during the coating process at each concave convex lens, and the reflection or transmission at the convex spherical surface and at the concave spherical surface is continuously measured with photodiodes, and the respective optical layer thickness is determined from the functional relationship between the reflection or the transmission and the optical layer thickness.

Abstract: A method for adjusting resistivity of a film heater on a substrate for use in process fluids employed in the semiconductor-processing industry as part of a clean, particle-free, nonreactive, non-trapping, ultra-pure, thermally tolerant, sealed system. In one arrangement, the method includes the steps of selecting a heating rate, selecting an electrical resistance value in accordance with the heating rate, selecting a resistive material for coating a substrate to produce resistance heating consistent with the electrical resistance value, selecting dimensions for a film of the resistive material selected to balance effects of conductivity, resistivity, length, and area against effects of the heating rate, and forming the film by conformally coating a surface of the substrate with the film at the selected dimensions.

Abstract: A method for producing a light source bulb wherein a shielding film is formed on the outer peripheral face of a glass tube extending along a reference bulb axis, such that a coating for providing the shieiding film can be applied efficiently and precisely onto the outer peripheral face of the glass tube even though the shielding film is complicated in configuration. The method includes horizontally placing a light source bulb, vertically placing a coating discharging portion, moving a front edge face of the coating discharging portion close to the outer peripheral face of the shroud tube, and applying the coating by moving the coating discharging portion and the light source bulb relative to each other along a reference bulb axis and rotating the light source bulb upon the reference bulb axis while the coating is being discharged from the coating discharging portion.

Abstract: A method for producing a fired decoration with an essentially defect-free visual appearance on substrates made of glass, glass-ceramic, ceramic, or other substances with other decorative colors consisting of base enamel, pigments, and additives, whereby as additives, UV-sensitive optical whitening agents, in particular thiophene-benzoxazol derivatives, are added to the decorative color.

Abstract: A method for defining the characteristics of metal electrodes of ceramic sensor elements, where the metal electrodes are deposited as layers and subjected to a subsequent annealing process. The aim is to provide a non-destructive, simple and economical method, capable of being automated, for performing an acceptance test in a specimen-specific manner on the sensor element. In the case of the test procedure proposed here, the quantity and distribution of gold deposited so as to be inaccessible in the protective layer, are indirectly determined. This is done by measuring the layer thickness during manufacturing of an electrode, in a before/after comparison, with the aid of an eddy-current measuring process where the electrode is placed in the magnetic circuit of a coil that is traversed by the flow of a high-frequency a.c. current, and the resulting ostensible inductance of the coil is measured using an LCR measuring unit. The coil can be wired as a resonant circuit with the aid of a capacitor.

Abstract: A roofing system (10) adapted to be supported on a support surface (18), the system including a plurality of panels (14) arranged in partially overlapping relation to form a roof, the panels each having first (42) and second (44) side edges, an upper (26) and lower (30) surfaces providing a series of barrels (46) and pans (50), a first side region (83) defining a portion of a barrel and a first cylindrical mating surface (82), and a second-side region (66) defining a portion of a pan and a second cylindrical mating surface, the panels being arranged in overlapping relation so that the first and second mating surfaces are sealingly engaged.

Abstract: An automated system and method for measuring the height of a dispensed material. Depending on the requirements of the application, a pre-dispense scan, following the same path as the dispense cycle, of an object is performed to obtain a reference measurement. An automated dispensing apparatus then dispenses material on the object. A post-dispense scan, following the same path as the dispense cycle, is performed to obtain a height measurement of the dispensed material. Objects which do not meet an acceptable dispensed material height are rejected.

Abstract: A reference standard and method for inspecting dual-layered coatings. The reference standard has a first layer adherent to a substrate, the first layer has a predetermined thickness that increases in one direction. Adherent to the first layer is a second layer, the second layer has a predetermined thickness that increases in a direction orthogonal with the first layer. The orientation of the first and second layers of the reference standard provides a spectrum of the possible variations of the dual-layered coating.

Abstract: A method and system for controlling the bombardment of a wall (100) of an electrically shielded RF (ESRF) source to control wall deposition. By measuring thickness of a deposit on a wall (100), the method and system can determine how to control the bias voltage applied to the bias shield (105) of the ESRF source.

Abstract: To provide a thin film forming method and apparatus that can automatically form thin films having constant optical properties with high reproducibility. Antireflection films are deposited on lenses 2a that are held by a coating dome 2 by vaporizing an evaporation material 4 by using an electron gun 3. The power to be applied to the electron gun 3 is controlled so that a transmission or reflection light quantity value that is measured at each time point by an optical film thickness meter 10 becomes equal or approximately equal to a standard light quantity value stored in a standard light quantity value data storing device.

Abstract: A method for forming a resistor on a roughened surface for use in process fluids employed in the semiconductor-processing industry as part of a clean, particle-free, nonreactive, non-trapping, ultra-pure, thermally tolerant, sealed system. In one arrangement, the method for forming the resistor includes the steps of selecting a coating for the roughened surface from among the group of resistive materials, roughening a surface to promote mechanical adherence of the coating to the selection of a coating comprising resistive material, roughening a surface for promoting mechanical adherence of the resistive material thereto, and electroplating the resistive material onto the roughened surface to provide a uniformly controllable resistance in the coating.

Abstract: A substrate processing apparatus has a film forming unit group disposed along a first transfer route and a developing processing unit group disposed along a second transfer route. A substrate is transferred along the first transfer route, undergoes film forming processing in the film forming unit group, and thereafter undergoes exposure processing. After undergoing exposure processing, the substrate is transferred along the second transfer route and undergoes developing processing in the developing unit group. The unit groups in which different sorts of processing are performed are disposed along the different transfer routes as described above, thereby enabling the substrate to be transferred efficiently.

Abstract: Apparatuses and methods for use in vacuum vapor deposition coating provide for simpler, economical and continuous operation. A system and method for continuously melting and evaporating a solid material for forming a coating vapor includes the use of a separate melting crucible and evaporating crucible. A system and method for energizing the evaporative solids to form a plasma which includes first and second electrodes and a device for selectively switching polarity between the first and second electrodes to avoid coating vapor deposition on the electrodes. Another a system and method for energizing the evaporative solids to form a plasma which includes an electric arc discharge apparatus with a cathodic and an anodic part. A continuously fed electrode is disclosed for continuous vaporization of electrode members in an electric arc discharge. An apparatus and method provides for measurement of the rate of evaporation from an evaporator and the degree of ionization in a vapor deposition coating system.

Abstract: A reactant gas is introduced into a process chamber under a temperature which is lower than reactive temperature of the reactant gas so that voids in a porous amorphous insulation film on a sample is filled with the introduced reactant gas. And chemical vapor deposition is carried out with heating the porous amorphous insulation film up to a temperature which is higher than the reactive temperature of the reactant gas to form a crystalline thin film on inner surfaces of the voids. Image data representing the porous amorphous insulation film in which the crystalline thin film is formed are generated with using a transmission electron microscope, and the porous amorphous insulation film is observed based on the image data to measure topographical characteristics of the porous amorphous insulation film such as void's size, porosity, etc.

Abstract: A process of monitoring the function of a spray stream, includes the steps of determining a first signal commensurate with noise in proximity of the spray stream when exiting a spray gun, determining a second signal commensurate with noise in an environment further distant to the spray stream, separating from the first and second signals a wanted signal, and analyzing the wanted signal for evaluation of the effectiveness of the spray stream.

Abstract: A method and apparatus are disclosed for electrically monitoring processing variations of a material deposited using a collimated process. In one embodiment, the method and apparatus are directed to monitoring variations in step coverage of a conductive material deposited using a collimated sputtering process. A substrate having a plurality of trenches is used to mimic features desired to be monitored, such as contact holes. The resistance of metal deposited into the trenches is monitored to determine the effectiveness of the collimated sputtering process.

Abstract: A method and apparatus are disclosed for electrically monitoring processing variations of a material deposited using a collimated process. In one embodiment, the method and apparatus are directed to monitoring variations in step coverage of a conductive material deposited using a collimated sputtering process. A substrate having a plurality of trenches is used to mimic features desired to be monitored, such as contact holes. The resistance of metal deposited into the trenches is monitored to determine the effectiveness of the collimated sputtering process.

Abstract: A method of generating an anti-reflection optical coating on a laser diode includes determining a preliminary design for the coating, fabricating the coating on a first laser diode using an in-situ optical monitoring technique and measuring the performance of the laser diode. The steps of modifying the anti-reflection coating on the laser diode and measuring the performance of the laser diode are repeated until a performance maximum is determined. Another anti-reflection coating is fabricated a second laser diode and the performance of the laser diode is measured. Again, the steps of modifying the anti-reflection coating on the laser diode and measuring the performance of the laser diode are repeated until another performance maximum is determined. The above steps are repeated with additional laser diodes, as necessary, until a global performance maximum is determined.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a characteristic of a layer formed on a specimen by a deposition process. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Abstract: A method and system for producing a film (preferably a thin film with highly uniform or highly accurate custom graded thickness) on a flat or graded substrate (such as concave or convex optics), by sweeping the substrate across a vapor deposition source operated with time-varying flux distribution. In preferred embodiments, the source is operated with time-varying power applied thereto during each sweep of the substrate to achieve the time-varying flux distribution as a function of time. A user selects a source flux modulation recipe for achieving a predetermined desired thickness profile of the deposited film. The method relies on precise modulation of the deposition flux to which a substrate is exposed to provide a desired coating thickness distribution.

Abstract: In an annealing process in which laser light is irradiated to a semiconductor thin film, a refractive index of the semiconductor thin film after laser light irradiation is measured and conditions for the next laser light irradiation are adjusted based on the measured refractive index value. For example, laser light irradiation conditions are adjusted so that semiconductor thin films always have the same refractive index. As a result, the annealing can be performed under the same conditions at every laser light irradiation even if the laser light irradiation conditions vary unavoidably.

Abstract: A plurality of production line recipes and film thickness measurement recipes that recite the same type of coating solution, but different target film thickness are prepared in a coating unit. Recipes that recite the same types of coating solution and the same film thickness are linked to a common spin curve. A film thickness measurement recipe is executed so as to calculate a compensated value for a revolving speed for each measured data of the film thickness. The designated values of revolving speeds of individual recipes can be compensated using the compensated value at a time.

Abstract: There is provided a process and its system for fabricating plasma with feedback control on plasma density. This process uses a heterodyne millimeter wave interferometer as a sensor to measure the plasma density in the process container and the plasma density that is needed in the plasma fabricating process, and then provides real-time information of the measurements to a digital control device which makes numerical calculations and then drives the RF power generator to change the RF output power so as to enable the plasma density in the plasma fabricating process to be close to the expected plasma density. The conventional operation parameter method is to control air pressure, RF power, gas flow quantity, temperature and so on. However, it does not control the plasma parameter that has the most direct influence on the process. Therefore, this method cannot guarantee that, in the process of fabricating wafers, different batches of wafers will be operated under similar process plasma conditions.

Abstract: An apparatus and method for using &agr;-particle energy loss to measure the thickness and stoichiometry of films grown by molecular beam epitaxy and other methods. The apparatus for measuring the thickness of films grown on a substrate in a growth chamber, comprises a protective housing having an aperture opening into the growth chamber, a solid state detector disposed in the protective housing, a shutter for opening and closing the aperture, a shield disposed in the housing between the aperture and the solid state detector for shielding the detector, and a calibration source disposed between the shield and the detector for calibrating the measurements made by the detector. A second calibration source disposed between the shutter and the shield, for measuring deposition on the shield.

Abstract: A high-temperature balance includes a piezoelectric material, such as langasite, that is stable at high temperatures. The frequency response of the balance is monitored to determine the change in mass of material deposited on the balance in a high-temperature environment. Accordingly, the balance can be used to monitor high-temperature deposition rates or to perform thermogravimetric analysis. The high-temperature balance of this invention can further be operated as a nanobalance to measure monolayer changes in film thickness.

Abstract: An apparatus for measuring valve dispensing time. In the apparatus, an optical fiber sensor is located arranged in the vicinity of an outlet of a nozzle. A magnetic field is generated in coils of a first relay by an ON signal from an electromagnetic valve, such that contacts thereof are connected to each other. A magnetic field is generated in coils of a second relay by an OFF signal from the electromagnetic valve, such that contacts thereof are connected to each other. A stopwatch has a start terminal connected to the first relay and a stop terminal connected to the second relay. When the electromagnetic valve transmits a signal to the suckback valve to dispense the photoresist from the nozzle, a ON signal is transmitted to generate a magnetic field in coils of the first relay, while contacts of the first relay are connected to start the stop watch.

Abstract: A method and apparatus are disclosed for electrically monitoring processing variations of a material deposited using a collimated process. In one embodiment, the method and apparatus are directed to monitoring variations in step coverage of a conductive material deposited using a collimated sputtering process. A substrate having a plurality of trenches is used to mimic features desired to be monitored, such as contact holes. The resistance of metal deposited into the trenches is monitored to determine the effectiveness of the collimated sputtering process.

Abstract: A method for the continuous monitoring of the coating of a yarnlike dielectric material with assistants comprises applying a solution of said assistants dissolved in a polar solvent to said yarnlike material, then passing said yarnlike material between the electrodes of a downline capacitive measuring element, determining the capacity changes of said downline capacitive measuring element, and using said capacity changes to calculate the unevenness of the layer thickness of the applied solution.

Abstract: Precise control of deposition or etching of thin films on a transparent substrate is particularly useful for electroformation of nozzles and formation control. A computer based measuring system is used to measure, in real time, a test feature such as one such nozzle. The rate of material deposition and removal is controlled based on the measured value of the test feature. In particular, a video camera and microscope are used to produce images of the test feature. During the electroplating process, metal is plated onto a conductive layer, and as the plated metal layer grows up from the conductive layer of the mandrel, the plated layer can also encroach on transparent openings produced by the absence of the mandrel conductive layer. The amount of encroachment on the transparent openings is directly related to the thickness of the plated layer.

Abstract: The invention provides a method for producing a micro-carrier, which includes patterning pluralities of bar code on a mask; exposing the bar code to a substrate coated with photoresist; etching and removing residual photoresist and electroforming to a nickel plate; placing a bead coated with biotin or poly-L-lysine between two-nickel plates, and compressing the bar code on the surface of the bead to form a microcake-like particle with bar code; and combining the particle with the corresponding bio-molecule thereof to produce a micro-carrier with a label. The invention also provides a test method for identifying a bio-molecule, which includes mixing several micro-carriers with the labeled unknown bio-molecules; and identifying the bar code on the micro-carrier via image recognition system, wherein the numbers and types of the known micro-carrier can be flexibly adjusted.

Abstract: Since a widely applicable high quality plasma display equipped with a phosphor layer suitable as a highly precise plasma display can be produced continuously at a high productivity level, an industrially advantageous method and apparatus for producing a plasma display can be provided. The highly precise plasma display obtained in the present invention can be widely used in the display field, for example, for wall mounted television sets, information displays, etc.

Abstract: Disclosed is a method for the formation of a silica coating film having a remarkably high crack-forming thickness limit on the surface of a substrate which may be highly heat resistant, for example, having a circuit wiring layer of polycrystalline silicon to withstand a temperature higher than 500° C. without excessive diffusion of dopant through the source layer or drain layer of the semiconductor device. The method comprises the steps of: coating the substrate surface with a coating solution containing a modified polysilazane which is a reaction product of a polysilazane and a dialkyl alkanol amine, drying the coating layer, subjecting the coating layer to a first baking treatment at 350-450° C. for 10-60 minutes and subjecting the layer to a second baking treatment at 550-800° C. for 0.5-60 minutes.

Abstract: In an annealing process in which laser light is irradiated to a semiconductor thin film, a refractive index of the semiconductor thin film after laser light irradiation is measured and conditions for the next laser light irradiation are adjusted based on the measured refractive index value. For example, laser light irradiation conditions are adjusted so that semiconductor thin films always have the same refractive index. As a result, the annealing can be performed under the same conditions at every laser light irradiation even if the laser light irradiation conditions vary unavoidably.

Abstract: In a film forming method for forming an optical multilayer filter by detecting the thickness of each layer by means of an optical thickness monitor (OTM) 15 and by controlling a film forming apparatus 11 based on the OTM detected output: the light source of the OTM 15 is formed by a variable wavelength light source whose wavelength is variable over the range of &lgr;1 nm to &lgr;2 nm, including &lgr;nm; the optical thickness of each of &lgr;/4-oriented layers is optimized within the range of &lgr;1/4 nm to &lgr;2/4 nm; the wavelength of the variable wavelength light source 12 for each layer is selected so that its transmittance reaches an extreme value at the optical thickness of each layer; and the formation of each layer is stopped upon detection of the extreme value of the transmittance.

Abstract: A reactor for processing a substrate includes a first housing defining a processing chamber and supporting a light source and a second housing rotatably supported in the first housing and adapted to rotatably support the substrate in the processing chamber. A heater for heating the substrate is supported by the first housing and is enclosed in the second housing. The reactor further includes at least one gas injector for injecting at least one gas into the processing chamber onto a discrete area of the substrate and a photon density sensor extending into the first housing for measuring the temperature of the substrate. The photon density sensor is adapted to move between a first position wherein the photon density sensor is directed to the light source and a second position wherein the photon density sensor is positioned for directing toward the substrate. Preferably, the communication cables comprise optical communication cables, for example sapphire or quartz communication cables.