Titanium (ti) Or Zirconium (zr) Containing Patents (Class 427/255.36)
  • Patent number: 9790238
    Abstract: Disclosed herein is a novel strontium precursor containing a beta-diketonate compound. Being superior in thermal stability and volatility, the strontium precursor can form a quality strontium thin film.
    Type: Grant
    Filed: May 3, 2013
    Date of Patent: October 17, 2017
    Assignee: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY
    Inventors: Bo-Keum Park, Taek-Mo Chung, Chang-Gyoun Kim, Sheby Mary George, Young-Kuk Lee, Jong-Sun Lim, Seog-Jong Jeong, Dong-Ju Jeon, Ki-Seok An, Sun-Sook Lee
  • Publication number: 20150140215
    Abstract: The present invention is related to carbon-doped metal oxide films. A method of depositing a low friction metal oxide film on a substrate is provided, including: using an atomic layer deposition technique, wherein said metal oxide film is deposited using at least an organo-metallic precursor, and wherein said substrate is at a temperature of 150° C. or lower during deposition of said metal oxide film, whereby a carbon-doped metal oxide film is obtained. The carbon-doped metal oxide films provide a low coefficient of friction, for example ranging from about 0.05 to about 0.4. In addition, the carbon-doped metal oxide films provide anti-stiction properties, where the measured work of adhesion is less than 10 ?J/m2. In addition, the carbon-doped metal oxide films provide unexpectedly good water vapor transmission properties. The carbon content in the carbon-doped metal oxide films ranges from about 5 atomic % to about 20 atomic %.
    Type: Application
    Filed: November 12, 2014
    Publication date: May 21, 2015
    Inventors: Boris Kobrin, Romuald Nowak, Jeffrey D. Chinn
  • Publication number: 20150118395
    Abstract: Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
    Type: Application
    Filed: December 31, 2014
    Publication date: April 30, 2015
    Inventors: Roy Gerald GORDON, Jill S. BECKER, Dennis HAUSMANN, Seigi SUH
  • Publication number: 20150072085
    Abstract: Disclosed are methods of using the Ti(iPrDAD)2 precursors to deposit Titanium oxide thin films on one or more substrates via vapor deposition processes.
    Type: Application
    Filed: November 12, 2014
    Publication date: March 12, 2015
    Inventors: Clement LANSALOT-MATRAS, Jooho LEE
  • Publication number: 20140227512
    Abstract: The invention provides methods for forming silicon oxide-containing layer(s) on a substrate, such as glass, by heating a substrate, vaporizing at least one precursor comprising a monoalkylsilane having an alkyl group with greater than two carbon atoms to form a vaporized precursor stream, and contacting a surface of the heated substrate with the vaporized precursor stream at about atmospheric pressure to deposit one or more layers comprising silicon oxide onto the surface of the substrate. The invention is particularly useful for applying an anti-iridescent coating to glass in an online float glass process.
    Type: Application
    Filed: September 13, 2012
    Publication date: August 14, 2014
    Applicant: Arkema Inc.
    Inventors: Ryan C. Smith, Jeffery L. Stricker
  • Patent number: 8765220
    Abstract: Disclosed are hafnium- or zirconium-containing compounds. The compounds may be used to deposit hafnium- or zirconium-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. The hafnium- or zirconium-containing compounds include a ligand at least one aliphatic group as substituents selected to have greater degrees of freedom than the substituents disclosed in the prior art.
    Type: Grant
    Filed: November 5, 2010
    Date of Patent: July 1, 2014
    Assignee: American Air Liquide, Inc.
    Inventors: Christian Dussarrat, Vincent M. Omarjee, Venkateswara R. Pallem
  • Patent number: 8741800
    Abstract: A high surface area catalyst with a mesoporous support structure and a thin conformal coating over the surface of the support structure. The high surface area catalyst support is adapted for carrying out a reaction in a reaction environment where the thin conformal coating protects the support structure within the reaction environment. In various embodiments, the support structure is a mesoporous silica catalytic support and the thin conformal coating comprises a layer of metal oxide resistant to the reaction environment which may be a hydrothermal environment.
    Type: Grant
    Filed: July 22, 2010
    Date of Patent: June 3, 2014
    Assignee: UChicago Argonne, LLC
    Inventors: Jeffrey W. Elam, Christopher L. Marshall, Joseph A. Libera, James A. Dumesic, Yomaira J. Pagan-Torres
  • Patent number: 8728576
    Abstract: A method for manufacturing photocatalytically active titanium dioxide layers on substrate surfaces. The method reduces the effort for the manufacture of photocatalytically active titanium dioxide layers and increases the choice for the coating of suitable substrate materials. In the method, a titanium compound present in the gas phase and water vapor are directed to a preheated substrate by means of gas phase hydrolysis and a titanium dioxide layer is foamed on the surface of the substrate by chemical reaction. In this respect, the titanium compound and water vapor are supplied separately from one another so that a flow speed of at least 0.5 m/s is achieved and the time between the first contact of the two gases up to the impact on the surface of the substrate is kept lower than 0.05 s, and in this process the photocatalytically active titanium dioxide layer is formed on the substrate surface.
    Type: Grant
    Filed: October 9, 2009
    Date of Patent: May 20, 2014
    Assignee: Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung E.V.
    Inventors: Thomas Abendroth, Holger Althues, Stefan Kaskel, Ines Dani
  • Patent number: 8703245
    Abstract: A coated metal substrate has at least one layer of titanium based hard material alloyed with at least one alloying element selected from the list of chromium, vanadium and silicon. The total quantity of alloying elements is between 1% and 50% of the metal content, the layer having a general formula of: (Ti100-a-b-cCraVbSic)CxNyOz.
    Type: Grant
    Filed: December 26, 2012
    Date of Patent: April 22, 2014
    Assignees: Iscar, Ltd., Ionbond AG
    Inventors: Albir Layyous, Yehezkeal Landau, Hristo Strakov, Renato Bonetti
  • Patent number: 8668957
    Abstract: Method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (I): (M11-aM2a)ObNc,??(I) wherein 0?a<1, 0<b?3, 0?c?1, M1 represents a metal selected from (Hf), (Zr) and (Ti); and M2 represents a metal atom atoms, which comprises the following steps: A step a) of providing a substrate into a reaction chamber; A step (b) of vaporizing a M1 metal containing precursor of the formula (II): (R1yOp)x(R2tCp)zM1R?4-x-z??(II) wherein 0?x?3, preferably x=0 or 1, 0?z?3, preferably z=1 or 2, 1?(x+z)?4, 0?y?7, preferably y=2 0?t?5, preferably t=1, (R1yOp) represents a pentadienyl ligand, which is either unsubstituted or substituted; (R2tCp) represents a cyclopentadienyl (Cp) ligand, which is either unsubstituted or substituted, to form a first gas phase metal source; A step c) of introducing the first gas phase metal source in the reaction chamber, in order to provoke their contact with said substrate, to generate the deposition of a metal containing dielectric
    Type: Grant
    Filed: March 16, 2007
    Date of Patent: March 11, 2014
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Christian Dussarrat, Nicolas Blasco, Audrey Pinchart, Christophe Lachaud
  • Publication number: 20140065368
    Abstract: This disclosure relates to methods that include depositing a first component and a second component to form a film including a plurality of nanostructures, and coating the nanostructures with a hydrophobic layer to render the film superhydrophobic. The first component and the second component can be immiscible and phase-separated during the depositing step. The first component and the second component can be independently selected from the group consisting of a metal oxide, a metal nitride, a metal oxynitride, a metal, and combinations thereof. The films can have a thickness greater than or equal to 5 nm; an average surface roughness (Ra) of from 90 to 120 nm, as measured on a 5 ?m×5 ?m area; a surface area of at least 20 m2/g; a contact angle with a drop of water of at least 120 degrees; and can maintain the contact angle when exposed to harsh conditions.
    Type: Application
    Filed: August 28, 2012
    Publication date: March 6, 2014
    Applicant: UT-BATTELLE, LLC
    Inventors: Tolga AYTUG, Mariappan Parans PARANTHAMAN, John T. SIMPSON, Daniela Florentina BOGORIN
  • Patent number: 8613975
    Abstract: Methods are provided to form and stabilize high-? dielectric films by chemical phase deposition processes using metal-source precursors and cerium-based ?-diketonate precursors according to Formula I: Ce(L)x (Formula I) wherein: L is a ?-diketonate; and x is 3 or 4. Further provided are methods of improving high-? gate property of semiconductor devices by using cerium precursors according to Formula I. High-? dielectric films are also provided comprising hafnium oxide, titanium oxide or mixtures thereof, and further containing a permittivity maintaining or increasing amount of cerium atoms.
    Type: Grant
    Filed: May 22, 2009
    Date of Patent: December 24, 2013
    Assignee: Sigma-Aldrich Co. LLC
    Inventors: Paul Raymond Chalker, Peter Nicholas Heys
  • Publication number: 20130333835
    Abstract: Hybrid inorganic-organic, polymeric alloys are prepared by combining atomic layer deposition and molecular layer deposition techniques provide barrier protection against intrusion of atmospheric gases such as oxygen and water vapor. The alloy may be formed either directly on objects to be protected, or on a carrier substrate to form a barrier structure that subsequently may be employed to protect an object. The alloy thus formed is beneficially employed in constructing electronic devices such as photovoltaic cell arrays, organic light-emitting devices, and other optoelectronic devices.
    Type: Application
    Filed: June 14, 2012
    Publication date: December 19, 2013
    Applicant: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Peter Francis Carcia, Robert Scott Mclean
  • Patent number: 8603582
    Abstract: Non-stick fixtures for selectively masking portions of a workpiece during application of a workpiece coating are described herein. These fixtures have predetermined surfaces thereon having an average surface roughness of about 25 Ra or less and a Rockwell hardness of about 65 Rc or more. The controlled average surface roughness ensures that these fixtures are non-stick with respect to the workpiece coating being applied to the workpieces disposed therein. The controlled Rockwell hardness ensures that the desired average surface roughness can be maintained throughout repeated use of the fixture in harsh coating environments. These fixtures reduce the workpiece coating bridging that occurs between the fixture and the workpiece, and also reduce the amount of overspray that occurs on the workpiece, thereby minimizing the amount of handwork and/or rework that is necessary after the workpiece is coated. This improves process cycle times and yields significantly.
    Type: Grant
    Filed: December 10, 2012
    Date of Patent: December 10, 2013
    Assignee: United Technologies Corporation
    Inventors: Ryan Richard Bernaski, Bartolomeo Palmieri
  • Patent number: 8571817
    Abstract: One disclosed feature of the embodiments is a control processor in a vapor delivery system for chemical vapor deposition precursors. A pressurization rate processor calculates first and second pressurization rate curves at first and second time instants. A volume calculator computes consumed volume based on first and second volumes at the respective first and second time instants. The first and second volumes are computed using slopes of lines fitting the first and second pressurization rate curves.
    Type: Grant
    Filed: September 10, 2008
    Date of Patent: October 29, 2013
    Assignee: Palo Alto Research Center Incorporated
    Inventors: David P. Bour, Christopher L. Chua, Zhihong Yang
  • Patent number: 8563085
    Abstract: In a method of forming a layer, a precursor composition including a metal and a ligand chelating to the metal is stabilized by contacting the precursor composition with an electron donating compound to provide a stabilized precursor composition onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor composition. The stabilized precursor composition is provided onto the substrate by introducing the precursor composition onto the substrate after the electron donating compound is introduced onto the substrate. The electron donating compound is continuously introduced onto the substrate during and after the precursor composition is introduced.
    Type: Grant
    Filed: February 25, 2011
    Date of Patent: October 22, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Youn-Joung Cho, Youn-Soo Kim, Kyu-Ho Cho, Jung-Ho Lee, Jae-Hyoung Choi, Seung-Min Ryu
  • Publication number: 20130260119
    Abstract: The thermal barrier coating system comprises a matrix of a first chemistry with multiple embedded second phases of a second chemistry. The matrix comprises a stabilized zirconia. The second regions comprise at least 40 mole percent of oxides having the formula Ln2O3, where Ln is selected from the lanthanides La through Lu, Y, Sc, In, Ca, and Mg with the balance zirconia (ZrO2), hafnia (HfO2), titania (TiO2), or mixtures thereof. The second phases have a characteristic thickness (T6) of less than 2.0 micrometers (?m). The spacing between second phases has a characteristic thickness (T5) of less than 8.0 micrometers (?m).
    Type: Application
    Filed: March 27, 2012
    Publication date: October 3, 2013
    Applicant: UNITED TECHNOLOGIES CORPORATION
    Inventors: David A. Litton, Brian S. Tryon
  • Patent number: 8546270
    Abstract: An atomic layer deposition apparatus and an atomic layer deposition method increase productivity. The atomic layer deposition apparatus includes a reaction chamber, a heater for supporting a plurality of semiconductor substrates with a given interval within the reaction chamber and to heat the plurality of semiconductor substrates and a plurality of injectors respectively positioned within the reaction chamber and corresponding to the plurality of semiconductor substrates supported by the heater. The plurality of injectors are individually swept above the plurality of semiconductor substrates to spray reaction gas.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: October 1, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-Hyun Kim, Ki-Vin Im, Hoon-Sang Choi, Moon-Hyeong Han
  • Patent number: 8541055
    Abstract: The present invention is directed toward a method for coating an article by placing the article in a coating apparatus comprising at least one coating chamber having at least one air conduit in flow communication with the coating chamber via an air pathway. A portion of the article extends into a shielding member. At least one coating member is positioned in the coating chamber and is in flow communication with a source of titanium-containing coating material. The coating member deposits the coating material onto the exterior of the article to form a coating. At least one exhaust member is in flow communication with the coating chamber via an exhaust pathway for removing excess coating material from the coating chamber.
    Type: Grant
    Filed: December 30, 2009
    Date of Patent: September 24, 2013
    Assignee: PPG Industries Ohio, Inc.
    Inventors: Luke A. Kutilek, Mehran Arbab, Songwei Lu
  • Patent number: 8518486
    Abstract: Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.
    Type: Grant
    Filed: May 12, 2010
    Date of Patent: August 27, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Nik Mirin, Tsai-Yu Huang, Vishwanath Bhat, Chris Carlson, Vassil Antonov
  • Patent number: 8512807
    Abstract: A method of making cutting tool inserts with high demands on dimensional accuracy includes: mixing by milling of powders forming hard constituents and binder phase, forming the powder mixture to bodies of desired shape, sintering the formed bodies, grinding with high accuracy the sintered bodies to inserts with desired shape and dimension, optionally edge rounding of cutting edges, and providing the ground inserts with a wear resistant non-diamond or non-diamond-like coating. According to the method, the ground inserts are heat treated prior to the coating operation in an inert atmosphere or vacuum or other protective atmosphere below the solidus of the binder phase for such a time that the micro structure of the surface region is restructured without causing significant dimensional changes. In this way inserts with unexpected improvement of tool life and dimensional accuracy have been achieved.
    Type: Grant
    Filed: December 9, 2009
    Date of Patent: August 20, 2013
    Assignee: Seco Tools AB
    Inventors: Bo Jansson, Jacob Sjolen
  • Publication number: 20130209780
    Abstract: The invention is directed to a composite polymer/nanoporous film system and methods of fabrication of tunable nanoporous coatings on flexible polymer substrates. The porosity of the nanoporous film can be tuned during fabrication to a desired value by adjusting the deposition conditions. Experiments show that SiO2 coatings with tunable porosity fabricated by oblique-angle electron beam deposition can be deposited on polymer substrates. These conformable coatings have many applications, including in the field of optics where the ability to fabricate tunable refractive index coatings on a variety of materials and shapes is of great importance.
    Type: Application
    Filed: August 25, 2011
    Publication date: August 15, 2013
    Applicant: RENSSELAER POLYTECHNIC INSTITUTE
    Inventors: David J. Poxson, Frank W. Mont, E. Fred Schubert, Richard W. Siegel
  • Publication number: 20130209767
    Abstract: A coated article of steel having at least one layer having a high hardness and a high resistance to wear applied by a deposition (e.g., PVD, a CVD, or PECVD) process, at least one surface region of said article and at least one ALD layer comprising at least one layer of a material deposited by an ALD (atomic layer deposition) process on said at least one layer, wherein the steel of which the article is made is a martensitic grade of steel, wherein the at least one layer, is a DLC layer, a metal-DLC layer, or a CrAlN layer and has a thickness in the range from 0.5 microns to 4 microns and a hardness in the range from 20 GPa to 100 GPa, and wherein the ALD layer has a thickness in the range from 1 nm to 100 nm.
    Type: Application
    Filed: December 27, 2012
    Publication date: August 15, 2013
    Applicants: Hauzer Techno Coating BV, Picosun Oy, Schaeffler AG
    Inventors: Hauzer Techno Coating BV, Schaeffler AG, Picosun Oy
  • Patent number: 8507049
    Abstract: The invention relates to a method for the coating of a surface of a ceramic basic body with a titanium compound, comprising the steps of (i) providing a preformed ceramic material; (ii) at least one step of surface activation of said ceramic material using a plasma for plasma-chemical surface preparation wherein the plasma comprises high-energy ions; (iii) at least one step of applying a titanium compound bonding layer to said ceramic material by plasma-supported coating wherein the plasma-supported coating is performed in pulsed and/or non-pulsed fashion; (iv) at least one step of applying a functional titanium compound layer by pulsed plasma-supported coating. The invention also relates to novel compositions as well as uses of the novel compositions.
    Type: Grant
    Filed: February 19, 2009
    Date of Patent: August 13, 2013
    Assignee: Ceramoss GmbH
    Inventor: Sorin Lenz
  • Patent number: 8470402
    Abstract: Methods of depositing a metal containing dielectric film on a substrate are disclosed. The metal containing dielectric film has the formula (M11-a M2a) Ob Nc, wherein 0?a<1, 0<b?3, 0?c?1, M1 represents a metal selected from (Hf) or (Zr); and M2 represents a metal atom. The method generally uses an M1 metal containing precursor selected from: Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, Zr(tBu2Cp)(NMe2)3, Hf(MeCp)(NMe2)3, Hf(EtCp)(NMe2)3, HfCp(NMe2)3, Hf(MeCp)(NEtMe)3, Hf(EtCp)(NEtMe)3, HfCp(NEtMe)3, Hf(MeCp)(NEt2)3, Hf(EtCp)(NEt2)3, HfCp(NEt2)3, Hf(iPr2Cp)(NMe2)3, or Hf(tBu2Cp)(NMe2)3.
    Type: Grant
    Filed: January 20, 2011
    Date of Patent: June 25, 2013
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Christian Dussarrat, Nicolas Blasco, Audrey Pinchart, Christophe Lachaud
  • Publication number: 20130143018
    Abstract: Coated polymer compositions having improved dielectric strength are disclosed. The coated polymer compositions can comprise a polymer substrate and an inorganic material. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.
    Type: Application
    Filed: November 30, 2012
    Publication date: June 6, 2013
    Applicant: Sabic Innovative Plastics IP B.V.
    Inventor: Sabic Innovative Plastics IP B.V.
  • Patent number: 8435886
    Abstract: A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.
    Type: Grant
    Filed: July 3, 2012
    Date of Patent: May 7, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Garo J. Derderian, Cem Basceri, Donald L. Westmoreland
  • Patent number: 8420208
    Abstract: A method of forming a high-k dielectric material including forming at least two portions of titanium dioxide, the at least two portions of titanium dioxide comprising a first portion comprising amorphous titanium dioxide and a second portion comprising rutile titanium dioxide. A method of forming a high-k dielectric material including forming a first portion of titanium dioxide at a temperature of from about 150° C. to about 350° C. and forming a second portion of titanium dioxide at a temperature of from about 350° C. to about 600° C. A high-k dielectric material is also disclosed.
    Type: Grant
    Filed: August 11, 2010
    Date of Patent: April 16, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Tsai-Yu Huang, Ching-Kai Lin
  • Patent number: 8399056
    Abstract: A method of forming on at least one support at least one metal containing dielectric films having the formula (M11-a M2a) Ob Nc, wherein: 0?a<1, 01 and M2 being metals Hf, Zr or Ti using precursors with pentadienyl ligands and/or cyclopentadienyl ligands.
    Type: Grant
    Filed: June 2, 2006
    Date of Patent: March 19, 2013
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Nicolas Blasco, Christian Dussarrat
  • Publication number: 20130052455
    Abstract: A method for making a coated cutting insert, as well as the coated cutting insert, includes a step of providing a substrate which has a surface, and depositing a CVD coating layer of titanium oxycarbonitride. The gaseous mixture from which the coating layer of titanium oxycarbonitride is deposited has a composition of nitrogen, methane hydrogen chloride, titanium tetrachloride, acetonitrile, carbon monoxide, and hydrogen. The coating layer of titanium oxycarbonitride comprises titanium oxycarbonitride whiskers having as measured in a two-dimensional plane view an average length greater than about 1.0 ?m, an average width greater than about 0.2 ?m, and an average aspect ratio greater than about 2.0.
    Type: Application
    Filed: August 29, 2011
    Publication date: February 28, 2013
    Applicant: Kennametal Inc.
    Inventors: Alfred S. Gates, JR., Zhigang Ban
  • Patent number: 8361550
    Abstract: A substrate is arranged in a processing chamber, the substrate is heated, a Ti material is introduced into the processing chamber in the form of gas, the Ti material is oxidized by introducing an oxidizing agent in the form of gas, a Sr material is introduced into the processing chamber in the form of gas, the Sr material is oxidized by introducing the oxidizing agent in the form of gas, and a SrTiO3 film is formed on the substrate. As the Sr material, a Sr amine compound or a Sr imine compound is used.
    Type: Grant
    Filed: February 27, 2008
    Date of Patent: January 29, 2013
    Assignee: Tokyo Electron Limited
    Inventors: Akinobu Kakimoto, Yumiko Kawano
  • Patent number: 8343591
    Abstract: A method for use with a coating process includes depositing a ceramic coating on a substrate within a coating chamber. Prior to depositing the ceramic coating, an electron beam source is used to heat a ceramic material. The ceramic material radiates heat to heat a substrate to an oxidation temperature to form an oxide layer on the substrate. A desired evaporation rate of the ceramic material is established during the heating to thereby provide an improved ceramic coating.
    Type: Grant
    Filed: October 24, 2008
    Date of Patent: January 1, 2013
    Assignee: United Technologies Corporation
    Inventors: James W Neal, Michael J. Maloney, David A. Litton, Christopher Masucci
  • Patent number: 8336487
    Abstract: The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO2 film on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiO2 film on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrO2 film forming sequences and the SiO2 film forming sequences are repeated for the adjusted number of times of performances.
    Type: Grant
    Filed: April 27, 2011
    Date of Patent: December 25, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Yoshihiro Ishida, Katsushige Harada, Takuya Sugawara
  • Patent number: 8334016
    Abstract: Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
    Type: Grant
    Filed: March 19, 2009
    Date of Patent: December 18, 2012
    Assignee: President and Fellows of Harvard College
    Inventors: Roy G. Gordon, Jill S. Becker, Dennis Hausmann, Seigi Suh
  • Patent number: 8323738
    Abstract: Provided are a coated cutting tool having excellent wear resistance and excellent resistance to chipping as well as excellent fracture resistance such that the coated cutting tool is unlikely to cause backward movement of the tool edge position due to wear or chipping, and a method for producing the same. A coated cutting tool comprising a base material having a surface coated with a coating film, wherein the coating film comprises at least one layer comprised of a TiCN columnar crystal film, wherein the TiCN columnar crystal film has an average grain size of 0.05 to 0.5 ?m, as measured in the direction parallel to the surface of the base material, and exhibits an X-ray diffraction pattern having a peak at a diffraction angle 2? in the range of from 121.5 to 122.6° wherein the peak is ascribed to the (422) crystal facet of the TiCN columnar crystal as measured using CuK? radiation.
    Type: Grant
    Filed: February 8, 2011
    Date of Patent: December 4, 2012
    Assignee: Tungaloy Corporation
    Inventors: Jun Watanabe, Yohei Sone
  • Patent number: 8313807
    Abstract: The present invention is directed to high coordination sphere Group 2 metal ?-diketiminate compositions, such as bis(N-(2,2-methoxyethyl)-4-(2,2-methoxyethylimino)-2-penten-2-aminato) barium; and the deposition of the metals of such metal ligand compositions by chemical vapor deposition, pulsed chemical vapor deposition, molecular layer deposition or atomic layer deposition to produce Group 2 metal containing films, such as barium strontium titanate films or strontium titanate films or barium doped lanthanate as high k materials for electronic device manufacturing.
    Type: Grant
    Filed: August 4, 2009
    Date of Patent: November 20, 2012
    Assignee: Air Products and Chemicals, Inc.
    Inventors: John Anthony Thomas Norman, Xinjian Lei
  • Patent number: 8293328
    Abstract: A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.
    Type: Grant
    Filed: September 7, 2006
    Date of Patent: October 23, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Ling Chen, Hua Chung, Barry L. Chin, Hong Zhang
  • Publication number: 20120225285
    Abstract: Coated substrates having high wear resistant coatings are disclosed. The coatings include at least one layer of either titanium oxycarbonitride or titanium aluminum oxycarbonitride, such that the layer has an oxygen to titanium atomic percent ratio in the range of about 0.01 to about 0.09 and an aluminum to titanium atomic percent ratio in the range of about 0 to about 0.1. The coatings have a hardness to Young's modulus ratio of at least 0.06. The substrate may be a cutting insert. Methods of making such coated substrates are also disclosed in which layers comprising titanium oxycarbonitride or titanium aluminum oxycarbonitride are deposited by medium temperature chemical vapor deposition (MT-CVD) on substrates in the temperature range of about 750 to about 950° C. using a mixture of gases wherein the ratio of the hydrogen gas to the nitrogen gas is greater than 5.
    Type: Application
    Filed: March 4, 2011
    Publication date: September 6, 2012
    Applicant: KENNAMETAL INC.
    Inventors: Zhigang Ban, Yixiong Liu, Mark S. Greenfield
  • Patent number: 8221838
    Abstract: A method of making a coated body wherein the method includes the following sequential steps. First, providing a substrate Second, applying by chemical vapor deposition a titanium carbonitride coating layer that has a thickness equal to between about 0.5 micrometers and about 25 micrometers Third, applying by chemical vapor deposition a first titanium/aluminum-containing coating layer that has a thickness between a greater than zero micrometers and about 5 micrometers. Fourth, applying by chemical vapor deposition an alumina coating layer that has a thickness between greater than zero micrometers and about 5 micrometers. The first titanium-containing coating layer and the alumina coating layer makes up a coating sequence, and the method includes applying a plurality of the coating sequences by CVD.
    Type: Grant
    Filed: June 12, 2008
    Date of Patent: July 17, 2012
    Assignee: Kennametal Inc.
    Inventors: Alfred S. Gates, Jr., Charles G. McNerny, Pankaj K. Mehrotra, Peter R. Leicht
  • Patent number: 8216377
    Abstract: A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.
    Type: Grant
    Filed: March 4, 2011
    Date of Patent: July 10, 2012
    Assignee: Micron Technology, Inc.
    Inventors: Garo J. Derderian, Cem Basceri, Donald L. Westmoreland
  • Patent number: 8142847
    Abstract: Compositions including an amido-group-containing vapor deposition precursor and a stabilizing additive are provided. Such compositions have improved thermal stability and increased volatility as compared to the amido-group-containing vapor deposition precursor itself. These compositions are useful in the deposition of thin films, such as by atomic layer deposition.
    Type: Grant
    Filed: March 3, 2008
    Date of Patent: March 27, 2012
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Stephen J. Manzik, Qin-Min Wang
  • Patent number: 8142848
    Abstract: A coated cemented carbide insert is particularly useful for wet or dry milling steels at high cutting speeds, milling of hardened steels, and high feed copy milling of tool steels. The insert is formed by a cemented carbide body including WC, NbC and TaC, a W-alloyed Co binder phase, and a coating including an innermost layer of TiCxNyOz, with equiaxed grains, a layer of TiCxNyOz with columnar grains and a layer of ?-Al2O3.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: March 27, 2012
    Assignee: Seco Tools AB
    Inventors: Andreas Larsson, Anna Sandberg
  • Patent number: 8080283
    Abstract: A method for providing a component with protection against sand related distress includes the steps of: providing a substrate; depositing a layer of a yttria-stabilized zirconia material on the substrate; and forming a molten silicate resistant outer layer over the yttria-stabilized zirconia material.
    Type: Grant
    Filed: April 15, 2010
    Date of Patent: December 20, 2011
    Assignee: United Technologies Corporation
    Inventors: Kevin W. Schlichting, Michael J. Maloney, David A. Litton, Melvin Freling, John G. Smeggil, David B. Snow
  • Publication number: 20110279979
    Abstract: Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.
    Type: Application
    Filed: May 12, 2010
    Publication date: November 17, 2011
    Inventors: Nik Mirin, Tsai-Yu Huang, Vishwanath Bhat, Chris Carlson, Vassil Antonov
  • Patent number: 8034403
    Abstract: A method of forming a primary coat, which consists of a V- or Ti-containing film, formed on the surface of a subject on which holes or the like have been formed, according to the CVD technique, while using, for instance, a tetravalent amide-type vanadium-containing organometal compound as a raw gas and using, for instance, tertiary butyl hydrazine as a reducing gas, and a copper-containing film is then formed on the primary coat, according to the CVD technique, to thus fill the holes or the like with the copper-containing film and to thus form copper distributing wire, which is excellent in the hole-filling properties and excellent in the adhesion to a primary coat, this process can be applied to the field of copper distributing wires used in the semiconductor industries.
    Type: Grant
    Filed: September 12, 2005
    Date of Patent: October 11, 2011
    Assignee: Ulvac, Inc.
    Inventors: Mikio Watanabe, Hideaki Zama
  • Publication number: 20110244130
    Abstract: A method for manufacturing photocatalytically active titanium dioxide layers on substrate surfaces. The method reduces the effort for the manufacture of photocatalytically active titanium dioxide layers and increases the choice for the coating of suitable substrate materials. In the method, a titanium compound present in the gas phase and water vapor are directed to a preheated substrate by means of gas phase hydrolysis and a titanium dioxide layer is formed on the surface of the substrate by chemical reaction. In this respect, the titanium compound and water vapor are supplied separately from one another so that a flow speed of at least 0.5 m/s is achieved and the time between the first contact of the two gases up to the impact on the surface of the substrate is kept lower than 0.05 s, and in this process the photocatalytically active titanium dioxide layer is formed on the substrate surface.
    Type: Application
    Filed: October 9, 2009
    Publication date: October 6, 2011
    Inventors: Thomas Abendroth, Holger Althues, Stefan Kaskel, Ines Dani
  • Publication number: 20110207283
    Abstract: Methods are provided herein for forming metal oxide thin films by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures such that the thin film is crystalline as deposited. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
    Type: Application
    Filed: February 22, 2010
    Publication date: August 25, 2011
    Inventors: Suvi Haukka, Hannu Huotari, Marko Tuominen
  • Patent number: 7998883
    Abstract: This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapour-phase pulses of at least one metal source material, and at least one oxygen source material are fed into a reaction space and contacted with the substrate. According to the invention, an yttrium source material and a zirconium source material are alternately used as the metal source material so as to form an yttrium-stabilised zirconium oxide (YSZ) thin film on a substrate.
    Type: Grant
    Filed: June 22, 2010
    Date of Patent: August 16, 2011
    Assignee: ASM International N.V.
    Inventor: Matti Putkonen
  • Publication number: 20110186464
    Abstract: A process for manufacturing glass containers completely or partly treated with the chemical vapor deposition (CVD) technique, by which a layer of oxides of Si and/or B and/or Ti and/or Zr and/or Ta and/or Al and/or mixtures of one or more of said elements is deposited with HTAP-MOCVD technique, includes the step of carrying our the deposition during the annealing of the container, by supplying into the annealing furnace a suitable gas mixture of precursor, reactant and transport gas.
    Type: Application
    Filed: October 11, 2007
    Publication date: August 4, 2011
    Applicant: NUOVA OMPI S.R.L.
    Inventors: Giovanni Carta, Fabiano Nicoletti, Gilberto Rossetto, Pierino Zanella
  • Patent number: RE43387
    Abstract: A cutting tool insert comprises a hard metal substrate having at least two wear-resistant coatings including an exterior ceramic coating and a coating under the ceramic coating being a metal carbonitride having a nitrogen to carbon-plus-nitrogen atomic ratio between 0.7 and 0.95 which causes the metal carbonitride to form projections into the ceramic coating improving adherence and fatigue strength of the ceramic coating.
    Type: Grant
    Filed: October 23, 1996
    Date of Patent: May 15, 2012
    Assignee: TDY Industries, LLC
    Inventors: Roy V. Leverenz, John Bost