Abstract: The present invention provides a method of forming a thin film containing a metal oxide as the main component, the film thickness of which is relatively uniform, at a high film deposition rate over a wide area and over a long time. The present invention is a method for forming a thin film containing a metal oxide as the main component on a substrate using a mixed gas stream containing a metal chloride, an oxidizing material, and hydrogen chloride, by a thermal decomposition method at a film deposition rate of 4500 nm/min. or greater, performing at least one selected from: 1) prior to mixing the metal chloride and the oxidizing material in the mixed gas stream, contacting hydrogen chloride with at least one selected from the metal chloride and the oxidizing material, and 2) forming a buffer layer in advance on a surface of the substrate on which the thin film containing a metal oxide as the main component is to be formed.

Abstract: The invention includes a chemical vapor deposition method of forming a barium strontium titanate comprising dielectric layer having a varied concentration of barium and strontium, and/or titanium, within the layer. A substrate is positioned within a chemical vapor deposition reactor. Barium and strontium are provided within the reactor by flowing at least one metal organic precursor to the reactor. Titanium is provided within the reactor. One or more oxidizers are flowed to the reactor. In one aspect, conditions are provided within the reactor to be effective to deposit a barium strontium titanate comprising dielectric layer on the substrate from the reactants.

Abstract: The present invention relates to oxides on suitable substrates, as converted from nitride precursors.

Abstract: A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the first reacting material is chemisorbed onto the substrate. Then, a second reacting material including oxygen is introduced onto the substrate. A portion of the second reacting material is also chemisorbed onto the substrate, to form an atomic layer of a solid material on the substrate. The solid material may be used as a dielectric layer of the capacitor and/or a gate dielectric layer of the transistor.

Abstract: Provided is a method for fabricating a metal oxide thin film in which a metal oxide generated by a chemical reaction between a first reactant and a second reactant is deposited on the surface of a substrate as a thin film. The method involves introducing a first reactant containing a metal-organic compound into a reaction chamber including a substrate; and introducing a second reactant containing alcohol. Direct oxidation of a substrate or a deposition surface is suppressed by a reactant gas during the deposition process, as it uses alcohol vapor including no radical oxygen as a reactant gas for the deposition of a thin film. Also, since the thin film is deposited by the thermal decomposition, which is caused by the chemical reaction between the alcohol vapor and a precursor, the deposition rate is fast. Particularly, the deposition rate is also fast when a metal-organic complex with ?-diketone ligands is used as a precursor.

Abstract: One or more substrates may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The one or more coiled substrates are placed in a treatment chamber where substantially an entire surface of the one or more coiled substrates may be treated with a surface treatment process. One or more spacers may be placed between adjacent layers of the coiled substrate before a full turn of the substrate has been coiled around a carousel.

Abstract: A thermal barrier coating, or TBC, and method for forming the TBC. The TBC is formed of a thermal-insulating material that contains yttria-stabilized zirconia (YSZ) alloyed with at least a third oxide. The TBC is formed to also contain elemental carbon, and may potentially contain carbides and/or a carbon-containing gas that forms from the thermal decomposition of carbon. The TBC is characterized by lower density and thermal conductivity, high temperature stability and improved mechanical properties. To exhibit the desired effect, the third oxide is more particularly one that increases the lattice strain energy of the TBC microstructure as a result of having an ion size that is sufficiently different than a zirconium ion.

Abstract: A method of making a coated article (e.g., window unit), and corresponding coated article are provided. A layer of or including diamond-like carbon (DLC) is formed on a glass substrate, preferably over at least one barrier layer. Then, a protective layer is formed on the substrate over the DLC inclusive layer. During heat treatment (HT), the protective layer prevents the DLC inclusive layer from significantly burning off. Thereafter, the resulting coated glass substrate may be used as desired, it having been HT and including the protective DLC inclusive layer. The protective layer may be removed after HT.

Abstract: The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercritical fluid is utilized to introduce multiple precursors into the reaction chamber during ALD. The invention can be utilized to form any of various materials, including metal-containing materials, such as, for example, metal oxides, metal nitrides, and materials consisting of metal. Metal oxides can be formed by utilizing a supercritical fluid to introduce a metal-containing precursor into a reaction chamber, with the precursor then forming a metal-containing layer over a surface of a substrate. Subsequently, the metal-containing layer can be reacted with oxygen to convert at least some of the metal within the layer to metal oxide.

Abstract: The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li) and/or magnesium (Mg) is deposited on a substrate in a plasma assisted chemical vapor deposition process such as an electron cyclotron resonance chemical vapor deposition (ECR CVD) process. Zinc is introduced to a chamber through a zinc precursor in a vaporizer. Microwave energy ionizes zinc and oxygen in the chamber to a plasma, which is directed to the substrate with a relatively strong field. Electrically biased control grids control a rate of deposition of the plasma. The control grids also provide Li and/or Mg dopants for the ZnO to create the ferroelectric film. A desired ferroelectric property of the ferroelectric film can be tailored by selecting an appropriate composition of the control grids.

Abstract: Methods and apparatus of forming titanium tantalum silicon nitride (TixTay(Si)Nz) layers are described. The titanium tantalum silicon nitride (TixTay(Si)Nz) layer may be formed using a cyclical deposition process by alternately adsorbing a titanium-containing precursor, a tantalum-containing precursor, a nitrogen-containing gas and a silicon-containing gas on a substrate. The titanium-containing precursor, the tantalum-containing precursor, the silicon-containing precursor and the nitrogen-containing precursor react to form the titanium tantalum silicon nitride (TixTay(Si)Nz) layer on the substrate. The formation of the titanium tantalum silicon nitride (TixTay(Si)Nz) layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the titanium tantalum silicon nitride (TixTay(Si)Nz) layer is used as a diffusion barrier for a copper metallization process.

Abstract: A film forming and film modifying method utilizing a film forming apparatus which has an alcohol supply unit to form a metal oxide film on a semiconductor wafer in a vacuum atmosphere in which a vaporized metal oxide film material and a vaporized alcohol exist. The film modifying method irradiates a UV ray on ozone to generate active oxygen atoms, thus modifying the metal oxide film by exposing the metal oxide film to the active oxygen atoms in a vacuum atmosphere.

Abstract: A coated cutting tool is composed of one or more layers of refractory compounds of which at least one layer is single-phase ?-alumina with a pronounced columnar grain-structure and strong texture in the [300]-direction. The alumina layer is preferably deposited by CVD (Chemical Vapor Deposition) and the preferred microstructure and texture are achieved by adding a second metal halide, and a texture modifying agent, to the reaction gas. When coated cemented carbide cutting tools according to the invention are used in the machining of steel or cast iron, several important improvements compared to prior art have been observed, particularly in the machining of nodular cast iron.

Abstract: The organozirconium composite of the present invention has a decomposition temperature which is near the respective decomposition temperatures of an organolead compound and an organotitanium compound. The raw material solution can precisely control the composition of a PZT thin film over a broad temperature range. The raw material solution is less likely to react an organolead compound even when mixed with the organolead compound. The present invention provides a raw material solution which is less likely to cause vapor phase cracking.

Abstract: A metal-containing semiconductor layer having a high dielectric constant is formed with a method that avoids inclusion of contaminant elements that reduce dielectric constant of metals. The metal-containing semiconductor layer is formed overlying a substrate in a chamber. A precursor is introduced to deposit at least a portion of the metal-containing semiconductor layer. The precursor contains one or more elements that, if allowed to deposit in the metal-containing layer, would become impurity elements. A reactant gas is used to purify the metal-containing layer by removing impurity elements from the metal-containing layer which were introduced into the chamber by the precursor.

Abstract: A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 ?m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10?2 ?m2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

Abstract: The invention a chemical vapor deposition method of forming a barium strontium titanate comprising dielectric layer having a varied concentration of barium and strontium, and/or titanium, within the layer. A substrate is positioned within a chemical vapor deposition reactor. Barium and strontium are provided within the reactor by flowing at least one metal organic precursor to the reactor. Titanium is provided within the reactor. One or more oxidizers are flowed to the reactor. In one aspect, conditions are provided within the reactor to be effective to deposit a barium strontium titanate comprising dielectric layer on the substrate from the reactants.

Abstract: Method and apparatus are provided for forming metal nitride (MN), wherein M is contacted with iodine vapor or hydrogen iodide (HI) vapor to form metal iodide (MI) and then contacting MI with ammonia to form the MN in a process of reduced or no toxicity. Such method is conducted in a reactor that is maintained at a pressure below one atmosphere for enhanced uniformity of gas flow and of MN product. The MN is then deposited on a substrate, on one or more seeds or it can self-nucleate on the walls of a growth chamber, to form high purity and uniform metal nitride material. The inventive MN material finds use in semiconductor materials, in nitride electronic devices, various color emitters, high power microwave sources and numerous other electronic applications.

Abstract: A coated article, a coating for protecting an article, and a method for protecting an article are provided. The article comprises a metallic substrate and a substantially single-phase coating disposed on the substrate, wherein the coating comprises nickel (Ni) and at least about 30 atomic percent aluminum (Al); the coating further comprises a gradient in Al composition, the gradient extending from a first Al concentration level at an outer surface of the coating to a second Al concentration level at an interface between the substantially single-phase coating and the substrate, wherein the first Al concentration level is greater than the second Al concentration level and the second concentration level is at least about 30 atomic percent Al.

Abstract: Materials such as titanium are vapor-deposited to form a film on a substrate while the substrate is thermally coupled to a temperature-controlling thermal source. Varying the temperature conditions of the substrate when the film is deposited varies the intrinsic stress of the film, which varies the change in substrate shape caused by the presence of the film. A film having a desired intrinsic stress may be obtained by control of the substrate temperature when the film is deposited. A stress-controlled titanium film may be used, for example, as an adhesion layer between a silicon movable structure in an optical MEMS device and a gold layer serving as a reflecting surface.

Abstract: A method of stabilizing the properties of a material layer is disclosed. A plurality of wafers are stored in a FOUP and in sequence the wafers are transferred to a chamber to proceed with deposition of a material layer and to the FOUP filled with a specific gas after deposition until all the wafers in the FOUP are treated. In the process of deposition, the wafers deposited with material layers on their surfaces are stored in the FOUP filled with specific gas. Therefore, the surface properties of all the wafers in the FOUP are stablilized and contamination due to outgassing is prevented.

Abstract: According to the present invention there is provided a body at least partially coated with one or more refractory layers of which at least one layer essentially consist of ?-Al2O3. Said ?-Al2O3 layer consists of essentially equiaxed grains with an average grain size of <1 ?m and with a bimodal grain size distribution with coarser grains with an average grainsize in the interval 0.5-1 ?m and finer grains with an average grainsize of <0.5 ?m. The Al2O3 layer further contains striated zones containing titanium (>5 at %) but no nitrogen or carbon. This particular microstructure is obtained by temporarily stopping the gases needed for the growth of the Al2O3 layer and introducing TiCl4.

Abstract: An MOCVD process is provided for forming metal-containing films having the general formula M?xM?(1?x)MyOz, wherein M? is a metal selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Y, Sc, Yb, Lu, and Gd; M? is a metal selected from the group consisting of Mg, Ca, Sr, Ba, Pb, Zn, and Cd; M is a metal selected from the group consisting of Mn, Ce, V, Fe, Co, Nb, Ta, Cr, Mo, W, Zr, Hf and Ni; x has a value from 0 to 1; y has a value of 0, 1 or 2; and z has an integer value of 1 through 7. The MOCVD process uses precursors selected from alkoxide precursors, ?-diketonate precursors, and metal carbonyl precursors in combination to produce metal-containing films, including resistive memory materials.

Abstract: The invention includes chemical vapor deposition and physical vapor deposition methods of forming high k ABO3 comprising dielectric layers on a substrate, where “A” is selected from the group consisting of Group IIA and Group IVB elements and mixtures thereof, and where “B” is selected from the group consisting of Group IVA metal elements and mixtures thereof. In one implementation, a plurality of precursors comprising A, B and O are fed to a chemical vapor deposition chamber having a substrate positioned therein under conditions effective to deposit a high k ABO3 comprising dielectric layer over the substrate. During the feeding, pressure within the chamber is varied effective to produce different concentrations of A at different elevations in the deposited layer and where higher comparative pressure produces greater concentration of B in the deposited layer.

Abstract: A method or process for producing PZT films by using a Ti material having a broad allowable temperature range for providing a predetermined film composition, easily thermally deposited from Ti(OiPr)2(dibm)2 at a low substrate temperature of 450° C. or less in CVD. Starting materials are fed in a solution vaporization system. The starting materials, Ti (OiPr)2(dibm)2, used as a T1 source, and a combination of Pb(dpm)2-Zr(Oipr)(dpm)3-Ti(OiPr)2(dibm)2 in n-butyl acetate are vaporized and supplied at 200° C. The vaporized starting materials are fed into a chamber and subjected to CVD at a substrate temperature of 420° C. at 1 Torr in an oxygen atmosphere, whereby excellent PZT films can be produced. Ti(OiPr)2(dibm)2 has a melting point of 105° C., a high solubility and a vapor pressure of 1 Torr/150° C. and does not react with Pb(dpm)2, and a solution thereof in n-butyl acetate has a pot life of 3 months.

Abstract: The vacuum degree in a reactor is set to as low as 0.1 Torr. In this state, a butyl acetate solution in which Pb(DPM)2 is dissolved at a concentration of 0.1 mol is transported from a Pb source generator to an evaporator, while the flow rate of the butyl acetate solution is controlled to a predetermined flow rate by a massflow controller, to evaporate the Pb(DPM)2 dissolved together with the butyl acetate by the evaporator. Helium gas is added to these at a flow rate of 250 sccm, and the mixed gas is transported to a shower head. With this operation, source gases are supplied to a wafer in the reactor, while the partial pressure of each source gas is set low.

Abstract: A method of forming a dielectric film on a Si substrate comprises the steps of adsorbing a gaseous molecular compound of a metal element constituting a dielectric material on a Si substrate, and causing a decomposition of the gaseous molecular compound thus adsorbed by a hydrolysis process or pyrolytic decomposition process or an oxidation process.

Abstract: A lanthanum complex of formula (I) having a low evaporation temperature can be used as a useful precursor for MOCVD of a BLT thin layer on semiconductor devices. wherein A is pentamethyldiethylenetriamine(PMDT) or triethoxytriethyleneamine(TETEA).

Abstract: An anti-static, anti-reflection, transparent coating for a transpatent substrate, the coating including at least one electrically conductive layer, wherein the sheet resistance of the coating is less than about 1010 ohm/square. The coating is preferably higher transparent.

Abstract: A method for manufacturing semiconductor device is disclosed which forms a high dielectric layer using atomic layer deposition (ALD). The method for forming a high dielectric layer having a first metal element, a titanium atom and an oxygen atom includes: on a surface of a substrate, adsorbing a first organic source combining a ligand, wherein the ligand includes at least oxygen and C—H combination in the first metal element; forming an atomic layer of the first metal element and the oxygen by inducing reduction reaction of the first organism source and a NH3 gas, which are adsorbed on the surface of the substrate; adsorbing a second organism source combining a ligand, wherein the ligand includes at least oxygen and C—H combination on the titanium; and forming an atomic layer of the titanium and the oxygen by inducing reduction reaction of the second organism source and the NH3 gas, which are adsorbed on the surface of the substrate.

Abstract: The invention comprises a chemical vapor deposition method of forming a barium strontium titanate comprising dielectric layer. A substrate is positioned within a reactor. Barium and strontium are provided within the reactor by flowing at least one metal organic precursor to the reactor. Titanium is provided within the reactor. At least one oxidizer is flowed to the reactor under conditions effective to deposit a barium strontium titanate comprising dielectric layer on the substrate. In one implementation, the oxidizer comprises H2O. In one implementation, the oxidizer comprises H2O2. In one implementation, the oxidizer comprises at least H2O and at least another oxidizer selected from the group consisting of O2, O3, NOx, N2O, and H2O2, where “x” is at least 1. In one implementation, the oxidizer comprises at least H2O2 and at least another oxidizer selected from the group consisting of O2, O3, NOx, and N2O, where “x” is at least 1.

Abstract: The subject of the invention is a glass-, ceramic- or vitroceramic-based substrate (1) provided on at least part of at least one of its faces with a coating (3) with a photocatalytic property containing at least partially crystalline titanium oxide.

Abstract: A composite target is placed in a chamber. The target is in the form of a bar made of ceramic powder and it presents composition that is not uniform in the longitudinal direction. At least one substrate is introduced into the chamber in order to have formed thereon a ceramic coating with a composition gradient. The top face of the bar is swept by an electron beam so as to melt the bar material at its top face and form a vapor cloud in the chamber under low pressure. A bar is used that presents a plurality of superposed layers of different compositions, with the composition within each layer being uniform over the entire cross-section of the bar. Each layer of the bar comprises zirconia and at least one oxide selected from the oxides of nickel, cobalt, iron, yttrium, hafnium, cerium, lanthanum, tantalum, niobium, scandium, samarium, gadolinium, dysprosium, ytterbium, and aluminum.

Abstract: A film-forming method includes the steps of introducing oxygen radicals and an organic raw material gas containing a metal element into a vacuum container, and reacting the organic raw material gas with the oxygen radicals, thereby forming a metal oxide film on a surface of a substrate disposed in the vacuum container.

Abstract: A process for forming a thin metal oxide film is disclosed that comprises molding an amorphous powder of organic metal chelate complexes to obtain a target. The process also includes subjecting the target to a PVD process that forms the thin metal oxide.

Abstract: A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow rate of the gaseous source of Ti is reduced, to grow the conductive film further, wherein the first step and the second step are conducted alternately.

Abstract: An object of the present invention is to provide a liquid material for chemical vapor deposition (CVD), a method of forming a film by CVD and a CVD apparatus, capable of achieving film formation of a silicate compound of good quality. A liquid material for CVD includes an organometallic compound, a siloxane compound and an organic solvent for dissolving the organometallic compound and the siloxane compound. If the organometallic compound includes an alcoxyl group (e.g., tertialy-butoxyl group) having a larger number of carbon atoms than a propoxyl group or a &bgr;-diketone group (e.g., 2,2,6,6-tetramethyl-3,5-heptanedionate group), the stability in film formation is improved. As the organic solvent, diethyl ether, tetrahydrofuran, nor-octane, iso-octane and the like may be employed. As the siloxane compound, tri-metoxy-silane having a high degree of solubility in a nonsolar solvent and hexa-methyl-di-siloxane and octa-methyl-cycro-tetra-siloxane both having solubility in a polar solvent may be employed.

Abstract: Coated milling insert has a WC—Co cemented carbide with a low content of cubic carbides and a highly W-alloyed binder phase and a coating including an inner layer of TiCxNy with columnar grains followed by a layer of &kgr;-Al2O3 and a top layer of TiN. The coated milling insert is particularly useful for milling of grey cast iron with or without cast skin under wet conditions at low and moderate cutting speeds and milling of nodular cast iron and compacted graphite iron with or without cast skin under wet conditions at moderate cutting speeds.

Abstract: Improved methods of forming PZT thin films that are compatible with industry-standard chemical vapor deposition production techniques are described. These methods enable PZT thin films having thicknesses of 70 nm or less to be fabricated with high within-wafer uniformity, high throughput and at a relatively low deposition temperature. In one aspect, a source reagent solution comprising a mixture of a lead precursor, a titanium precursor and a zirconium precursor in a solvent medium is provided. The source reagent solution is vaporized to form a precursor vapor. The precursor vapor is introduced into a chemical vapor deposition chamber containing the substrate. In another aspect, before deposition, the substrate is preheated during a preheating period. After the preheating period, the substrate is disposed on a heated susceptor during a heating period, after which a PZT film is formed on the heated substrate.

Abstract: A thermal barrier coating (TBC) system and method for forming the coating system on a component. The method generally entails forming a TBC on the surface of the component so that the TBC has at least an outer portion that is resistant to infiltration by CMAS. The TBC is formed by co-depositing first and second ceramic compositions by physical vapor deposition so that the entire TBC has columnar grains and at least the outer portion of the TBC is a mixture of the first and second ceramic compositions. The outer portion is preferably a continuation of the inner portion, such that the TBC is not characterized by discrete inner and outer coatings. The second ceramic composition serves to increase the resistance of the outer portion of the TBC to infiltration by molten CMAS. A platinum-group metal may be co-deposited with the first and second ceramic compositions, or deposited before the TBC and then diffused into the outer portion as a result of the parameters employed in the deposition process.

Abstract: A process and apparatus for depositing a ceramic coating on a component. The process involves a technique for evaporating an evaporation source containing multiple different oxide compounds, at least one of the oxide compounds having a vapor pressure that is higher than the remaining oxide compounds, to depositing a coating of the multiple oxide compounds. A high energy beam is projected onto the evaporation source to melt and form a vapor cloud of the oxide compounds of the evaporation source, while preventing the vapor cloud from contacting and condensing on the component during an initial phase in which the relative amount of the one oxide compound in the vapor cloud is greater than its relative amount in the evaporation source.

Abstract: In order to deopsit a high-grade and extra-thin film without causing damage to the substrate at a relatively low temperature,

Abstract: The life of ceramic SPF dies can be enhanced significantly by plasma spray application of a cordierite glaze on the forming surface. The preferred glaze has a coefficient of thermal expansion close to or matching with the ceramic of the die, and, typically, is a 2•2•5 MAS system including 2-10 mol % TiO2 (or above 8 wt %).

Abstract: A method for depositing a film onto a substrate is provided. The substrate is contained within a reactor vessel at a pressure of from about 0.1 millitorr to about 100 millitorr. The method comprises subjecting the substrate to a reaction cycle comprising i) supplying to the reactor vessel a gas precursor at a temperature of from about 20° C. to about 150° C. and a vapor pressure of from about 0.1 torr to about 100 torr, wherein the gas precursor comprises at least one organo-metallic compound; and ii) supplying to the reactor vessel a purge gas, an oxidizing gas, or combinations thereof.

Abstract: A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the first reacting material is chemisorbed onto the substrate. Then, a second reacting material including oxygen is introduced onto the substrate. A portion of the second reacting material is also chemisorbed onto the substrate, to form an atomic layer of a solid material on the substrate. The solid material may be used as a dielectric layer of the capacitor and/or a gate dielectric layer of the transistor.

Abstract: A method for depositing a film on a substrate is provided. In one aspect, the method includes providing a metal-containing precursor to an activation zone, and activating the metal-containing precursor to form an activated precursor. The activated precursor gas is transported to a reaction chamber, and a film is deposited on the substrate using a cyclical deposition process, wherein the activated precursor gas and a reducing gas are alternately adsorbed on the substrate. Also provided is a method of depositing a film on a substrate using an activated reducing gas.

Abstract: A gas turbine component, such as a turbine disk or a turbine seal element, is protected by depositing an oxide coating on the gas turbine component. The deposition is performed by a vapor deposition process such as metal-organic chemical vapor deposition (MOCVD) to a coating thickness of from about 0.2 to about 50 micrometers, preferably from about 0.5 to about 3 micrometers. The deposited oxide may be an oxide of aluminum, silicon, tantalum, titanium, and chromium.

Abstract: Method and apparatus are provided for forming metal nitrides (MN) wherein M is contacted with iodine vapor or hydrogen iodide (HI) vapor to form metal iodide (MI) and contacting MI with ammonia to form the MN in a process of reduced or no toxicity. MN is then deposited on a substrate, on one or more seeds or it can self nucleate on the walls of a growth chamber, to form high purity metal nitride material. The inventive MN material finds use in semiconductor materials and in making nitride electronic devices as well as other uses.

Abstract: An atomic layer deposition method which comprises forming a metal oxide thin film by using, as a group IV metal precursor, a complex of a formula M(L)2 in which M is a group IV metal ion having a charge of +4 and L is a tridentate ligand having a charge of −2, the ligand being represented by the following formula (I): wherein each of R1 and R2, independently, is a linear or branched C1-4 alkyl group; and R3 is a linear or branched C1-5 alkylene group. The group IV metal precursor exhibits excellent thermal and chemical stabilities under a carrier gas atmosphere, whereas it has high reactivity with a reaction gas.

Abstract: The invention relates to a method and apparatus for the production of protective coatings on parts. A coating formed in accordance with the invention has a chemical composition and structure gradient across its thickness. The coating is obtained by heating of a composite ingot including a body and at least one insert disposed within the body. As the composite ingot is heated it sequentially evaporates to produce a vapor with a chemical composition varying over the evaporation time period. The composition of the body and composition and location of the insert within the body function to determine the chemical composition of the vapor at any time. Condensation and/or deposition of the vapor onto a substrate forms the inventive coating.