Titanium (ti) Or Zirconium (zr) Containing Patents (Class 427/255.36)
  • Patent number: 6652913
    Abstract: A method of forming a coated body having a nanocrystalline CVD coating of Ti(C,N,O) is disclosed. The coating is formed using the MTCVD process and including, as part of the gaseous mixture, CO, CO2 or mixtures therof. The use of this dopant during the coating results in a much smaller, equiaxed grain size.
    Type: Grant
    Filed: August 8, 2001
    Date of Patent: November 25, 2003
    Assignee: Seco Tools AB
    Inventors: Sakari Ruppi, Lennart Karlsson
  • Publication number: 20030211245
    Abstract: An article protected by a thermal barrier coating system is fabricated by providing an article substrate having a substrate surface; and thereafter producing a pre-oxidized bond coat on the substrate surface by depositing a bond coat on the substrate surface, the bond coat having a bond coat surface, and controllably oxidizing the bond coat surface to form a pre-oxidized bond coat surface. A thermal barrier coating is thereafter deposited overlying the pre-oxidized bond coat surface. The thermal barrier coating is yttria-stabilized zirconia having a yttria content of from about 3 percent by weight to about 5 percent by weight of the yttria-stabilized zirconia.
    Type: Application
    Filed: August 31, 2001
    Publication date: November 13, 2003
    Inventors: Irene Spitsberg, Robert William Bruce
  • Patent number: 6623794
    Abstract: A heat processable coated article suitable for tempering and/or bending which has metallic properties is prepared by coating a glass substrate. The substrate has deposited over it a stabilizing film and a metal-containing film is deposited over the stabilizing film. Also an overcoating with a protective layer of a silicon compound is deposited over the metal-containing film and forms a durable layer and prevents oxidation of the underlying metal-containing film. The coated article can be tempered and/or bent without losing its metallic properties to oxidation.
    Type: Grant
    Filed: June 7, 2001
    Date of Patent: September 23, 2003
    Assignee: PPG Industries Ohio, Inc.
    Inventors: James J. Finley, Mehran Arbab, Thomas J. Waynar
  • Patent number: 6620465
    Abstract: An improved method for applying a ceramic material, such as a thermal barrier coating to an article. A method for applying a ceramic material as a coating to a substrate article in which the thermal conductivity of the ceramic material is reduced or lowered is provided. The thermal conductivity of a coating applied by a physical vapor deposition (PVD) method is dependent upon its distance from the source(s) of material used for the coating. The thermal conductivity of the applied coating is altered by adjusting the position of the article undergoing the PVD process by increasing the distances of the article or workpiece from the ingot or source of ceramic material to provide a coating of lower thermal conductivity. In accordance with the present invention, the article to be coated is positioned at a distance required to achieve at least a 10% reduction in the thermal conductivity of the applied coating.
    Type: Grant
    Filed: April 23, 1999
    Date of Patent: September 16, 2003
    Assignee: General Electric Company
    Inventors: Joseph D. Rigney, David J. Wortman
  • Patent number: 6613385
    Abstract: An efficient and controllable CVD method deposits a high quality epitaxial CrO2 thin film over a non-magnetic substrate in a process chamber by chemical vapor deposition using a volatile liquid chromium compound such as CrO2Cl2 as a precursor. The method includes: selecting a volatile liquid chromium oxide precursor that decomposes in a heated process chamber to provide a chromium oxide layer on a substrate, placing the volatile liquid chromium oxide precursor in a first bubbler, transporting the volatile liquid chromium oxide precursor vapor with a carrier gas into the heated process chamber having the substrate therein, and growing the chromium oxide layer at a controlled growth rate on the substrate in the heated process chamber.
    Type: Grant
    Filed: April 23, 2001
    Date of Patent: September 2, 2003
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: William J. Desito
  • Patent number: 6608318
    Abstract: The present invention relates to a mass spectrometer that includes an ionization source having a chamber for ionizing a fluid sample. The ionization chamber has surfaces to reduce the overall interaction with reactive samples. The inner surface walls of the ionization chamber may be formed from an inorganic conductive nitride or disulfide material or may be applied to a substrate as a coating. The invention also includes a method for reducing the interaction of a reactive analyte with the inner wall of the chamber by application or coating the inner wall of the chamber with an inert conductive material.
    Type: Grant
    Filed: July 31, 2000
    Date of Patent: August 19, 2003
    Assignee: Agilent Technologies, Inc.
    Inventors: Patrick D. Perkins, Jeffrey T. Kernan
  • Patent number: 6592942
    Abstract: Method for chemical vapor deposition of a film onto a substrate. Before bulk chemical vapor deposition the substrate is subjected to a nucleation treatment. The nucleation treatment comprises atomic layer deposition wherein the substrate is alternatingly and sequentially exposed to pulses of at least two mutually reactive gaseous reactants wherein the nucleation temperature is chosen to prevent condensation of either of the used reactants and to prevent substantial thermal decomposition of each of the reactants individually.
    Type: Grant
    Filed: July 7, 2000
    Date of Patent: July 15, 2003
    Assignee: ASM International N.V.
    Inventor: Margreet Albertine Anne-Marie Van Wijck
  • Publication number: 20030100235
    Abstract: The visible light reflectance of polymeric substrates coated with conductive oxides is minimized over a broad region of the visible light spectrum by alternating layers of materials of high and low refractive index interposed between the substrate and the conductive oxide. The conductive oxide is outermost to permit direct electrical contact to be made. Visible light reflectance is 10% or less and visible light transmittance is 90% or more over a broad region of the spectrum.
    Type: Application
    Filed: November 29, 2001
    Publication date: May 29, 2003
    Applicant: N.V. BEKAERT S.A.
    Inventor: Wilfred C. Kittler
  • Patent number: 6551718
    Abstract: Disclosed is a metal sulphide coating composition of the formula MXSiVRYSZFW where M is one or more metals selected from: Mo, Ti, W, Nb, Ta, Zr, and Hf; Si is silicon; R is one or more elements selected from: C, B, Al, V, Cr, Fe, Co, Ni, Sm, Au, Cu, Zn, Sn, Pb, N, H, and O; S is sulphur; F is fluorine; X is 0.2 to 1.5; V is 0.02 to 3; Y is 0 to 4; Z is 0.2 to 6; and W is 0.01 to 6, and in which X, Y, Z, V, and W are given in amounts by atomic ratio. The compositions show good non-stick properties, low hydrophilia, and high stability.
    Type: Grant
    Filed: June 11, 1999
    Date of Patent: April 22, 2003
    Assignee: Gencoa Ltd.
    Inventor: Victor Bellido-Gonzalez
  • Publication number: 20030072883
    Abstract: The present invention is a process for enhancing the chemical vapor deposition of titanium nitride from a titanium containing precursor selected from the group consisting of tetrakis(dimethylamino)titanium, tetrakis(diethylamino)titanium and mixtures thereof, reacted with ammonia to produce the titanium nitride on a semiconductor substrate by the addition of organic amines, such as dipropylamine, in a range of approximately 10 parts per million by weight to 10% by weight, preferably 50 parts per million by weight to 1.0 percent by weight, most preferably 100 parts per million by weight to 5000 parts per million by weight to the titanium containing precursor wherein prior to the reaction, said titanium containing precursor is subjected to a purification process to remove hydrocarbon impurities from the titanium containing precursor.
    Type: Application
    Filed: June 10, 2002
    Publication date: April 17, 2003
    Inventors: Matthias J. Jahl, Douglas W. Carson, Shantia Riahi, Raymond Nicholas Vrtis
  • Patent number: 6521770
    Abstract: An organozirconium compound comprises zirconium complexed with a &bgr;-diketone compound and an alkoxy group having a branched alkyl group, and which has formula (1): wherein R is a branched alkyl group having 4 or 5 carbons; and L1, L2, and L3, the same or different from each other, are each a &bgr;-diketone compound.
    Type: Grant
    Filed: April 23, 2001
    Date of Patent: February 18, 2003
    Assignee: Mitsubishi Materials Corporation
    Inventors: Hideyuki Hirakoso, Shingo Okamura, Hiroto Uchida, Katsumi Ogi
  • Patent number: 6511718
    Abstract: A venturi mist generator creates a mist comprising droplets having a mean diameter less than one micron from liquid precursors containing multi-metal polyalkoxide compounds. The mist is mixed and then passed into a gasifier where the mist droplets are gasified at a temperature of between 100° C. and 250° C., which is lower than the temperature at which the precursor compounds decompose. The gasified precursor compounds are transported by carrier gas through insulated tubing at ambient temperature to prevent both condensation and premature decomposition. The gasified precursors are mixed with oxidant gas, and the gaseous reactant mixture is injected through a showerhead inlet into a deposition reactor in which a substrate is heated at a temperature of from 300° C. to 600 ° C. The gasified precursors decompose at the substrate and form a thin film of solid material on the substrate. The thin film is treated at elevated temperatures of from 500° C. to 900° C.
    Type: Grant
    Filed: December 17, 1999
    Date of Patent: January 28, 2003
    Assignee: Symetrix Corporation
    Inventors: Carlos A. Paz de Araujo, Larry D. McMillan, Narayan Solayappan, Jeffrey W. Bacon
  • Patent number: 6500499
    Abstract: Complex mixed metal containing thin films can be deposited by CVD from liquid mixtures of metal complexes without solvent by direct liquid injection and by other precursor dispersing method such as aerosol delivery with subsequent annealing to improve electrical properties of the deposited films. This process has potential for commercial success in microelectronics device fabrication of dielectrics, ferroelectrics, barrier metals/electrodes, superconductors, catalysts, and protective coatings. Application of this process, particularly the CVD of ZrSnTiOx (zirconium tin titanate, or ZTT) and HfSnTiOx (hafnium tin titanate, or HTT) thin films has been studied successfully.
    Type: Grant
    Filed: March 10, 2000
    Date of Patent: December 31, 2002
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Yoshihide Senzaki, Arthur Kenneth Hochberg, David Allen Roberts, John Anthony Thomas Norman, Glenn Baldwin Alers, Robert McLemore Fleming
  • Patent number: 6485564
    Abstract: In a thin film forming method of the invention, an atmosphere for a base as a thin film forming target is set to a high vacuum of, e.g., 0.01 Torr or less, and a gas of an organometallic compound and an oxidizing gas are introduced onto a base surface heated to about 450° C., to form a plurality of crystal nuclei, made of an oxide of a metal constituting the organometallic compound, on the base surface. The atmosphere for the base is then set to a lower vacuum than the first vacuum degree, and the gas of the organometallic compound and the oxidizing gas are subsequently introduced onto the base surface heated to about 45° C., to form a film made of the oxide of the metal there.
    Type: Grant
    Filed: November 13, 2000
    Date of Patent: November 26, 2002
    Assignee: Tokyo Electron Limited
    Inventors: Yijun Liu, Hiroshi Shinriki, Takashi Magara
  • Patent number: 6472076
    Abstract: There is provided an array of alkyl substituted silsesquioxane thin film precursors having a structure wherein alkyl groups are bonded to the silicon atoms of a silsesquioxane cage. The alkyl groups may be the same as, or different than the other alkyl groups. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [R—SiO1.5]x[H—SiO1.5]y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. R is a C1 to C100 alkyl group. Also provided are films made from these precursors and objects comprising these films.
    Type: Grant
    Filed: October 18, 1999
    Date of Patent: October 29, 2002
    Assignee: Honeywell International Inc.
    Inventor: Nigel P. Hacker
  • Patent number: 6468380
    Abstract: The present invention is directed to transparent articles including a microembossed image such as a hologram or diffraction grating, coated at least in-part, with a layer of material having a refractive index that differs from the refractive index of the transparent layer by about 0.2 units and can be prepared by solution coating techniques such as conventional printing, e.g., rotogravure.
    Type: Grant
    Filed: February 28, 2000
    Date of Patent: October 22, 2002
    Assignee: Foilmark, Inc.
    Inventors: Christopher C. Christuk, Nikos J. Georgakakis, Robert J. Balaam
  • Publication number: 20020150681
    Abstract: The subject of the invention is a glass-, ceramic- or vitroceramic-based substrate (1) provided on at least Part of at least one of its faces with a coating (3) with a photocatalytic property containing at least partially crystalline titanium oxide.
    Type: Application
    Filed: April 5, 2002
    Publication date: October 17, 2002
    Inventors: Philippe Boire, Xavier Talpaert
  • Publication number: 20020136832
    Abstract: Novel ligated compounds of tin, titanium, and zinc are useful as metal oxide CVD precursor compounds without the detriments of extreme reactivity yet maintaining the ability to produce high quality metal oxide coating by contact with heated substrates.
    Type: Application
    Filed: May 21, 2002
    Publication date: September 26, 2002
    Applicant: First Solar, LLC, a Delaware corporation
    Inventor: Dean M. Giolando
  • Patent number: 6451129
    Abstract: A decorative titanium material according to the present invention eliminates a deterioration of the appearance even after processing, that is, provides a small surface roughness, and has a hardened layer of titanium at the surface of the titanium material, this hardened surface layer including nitrogen and oxygen, and having a surface crystal grain size in the range from 0.1 to 60 &mgr;m.
    Type: Grant
    Filed: January 19, 1999
    Date of Patent: September 17, 2002
    Assignee: Citizen Watch Co., Ltd.
    Inventors: Masahiro Sato, Yoshitugu Sibuya, Junji Sato
  • Patent number: 6447854
    Abstract: A method for producing a thermal barrier coating system on an article that will be subjected to a hostile environment. The thermal barrier coating system is composed of a metallic bond coat and a ceramic thermal barrier coating having a columnar grain structure. The method generally entails forming the bond coat on the surface of a component, and then grit blasting the bond coat with an abrasive media having a particle size of greater than 80 mesh. The component is then supported within a coating chamber containing at least two ingots of the desired ceramic material. An absolute pressure of greater than 0.014 mbar is established within the chamber containing oxygen and an inert gas. Thereafter, the ceramic ingots are vaporized with an electron beam such that the vapor deposits on the surface of the component to form a layer of the ceramic material on the surface.
    Type: Grant
    Filed: July 21, 2000
    Date of Patent: September 10, 2002
    Assignee: General Electric Company
    Inventors: David V. Rigney, Antonio F. Maricocchi, David J. Wortman, Robert W. Bruce, Joseph D. Rigney
  • Publication number: 20020110638
    Abstract: The subject of the invention is a glass-, ceramic- or vitroceramic-based substrate (1) provided on at least part of at least one of its faces with a coating (3) with a photocatalytic property containing at least partially crystalline titanium oxide.
    Type: Application
    Filed: February 22, 2002
    Publication date: August 15, 2002
    Inventors: Philippe Boire, Xavier Talpaert
  • Patent number: 6428850
    Abstract: A single-substrate-processing CVD apparatus is used for forming a BST thin film on a semiconductor wafer while supplying a first process gas containing a mixture of Ba(thd)2 and Sr(thd)2, and a second process gas containing Ti(O-iPr)(thd)2 or Ti(thd)2. Precursors of Ba and Sr have lower activation energies and higher resistivities than precursors of Ti. The first and second process gases are supplied from a shower head which has a group of first spouting holes for spouting the first process gas and a group of second spouting holes for spouting the second process gas. The group of the second spouting holes are designed to have diameters gradually decreasing in radial directions outward from the center of a shower region, such that the second process gas is supplied at a spouting rate gradually decreasing in radial directions outward from the center.
    Type: Grant
    Filed: July 10, 2000
    Date of Patent: August 6, 2002
    Assignee: Tokyo Electron Limited
    Inventors: Hiroshi Shinriki, Yijun Liu, Masahito Sugiura
  • Patent number: 6416814
    Abstract: Novel ligated compounds of tin, titanium, and zinc are useful as metal oxide CVD precursor compounds without the detriments of extreme reactivity yet maintaining the ability to produce high quality metal oxide coating by contact with heated substrates.
    Type: Grant
    Filed: December 7, 2000
    Date of Patent: July 9, 2002
    Assignee: First Solar, LLC
    Inventor: Dean M. Giolando
  • Patent number: 6399490
    Abstract: Process for forming highly conformal titanium nitride on a silicon substrate. A gaseous reaction mixture of titanium tetrachloride and ammonia is passed over the semiconductor substrate surface maintained at a temperature of about 350° C. to about 800° C. The ratio of titanium tetrachloride to ammonia is about 5:1 to 20:1. The high degree of conformality achieved by the process of the invention allows TiN layers to be deposited on structures with high aspect ratios and on complicated, three-dimensional structures without forming a large seam or void.
    Type: Grant
    Filed: June 29, 2000
    Date of Patent: June 4, 2002
    Assignee: International Business Machines Corporation
    Inventors: Rajarao Jammy, Cheryl G. Faltermeier, Uwe Schroeder, Kwong Hon Wong
  • Publication number: 20020051847
    Abstract: A process for depositing titanium nitride films containing less than 5% carbon impurities and less than 10% oxygen impurities by weight via chemical vapor deposition is disclosed. Sheet resistance of the deposited films is generally be within a range of about 1 to 10 ohms per square. The deposition process takes place in a deposition chamber that has been evacuated to less than atmospheric pressure and utilizes the organo-metallic compound tertiary-butyltris-dimethylamido-titanium and a nitrogen source as precursors. The deposition temperature, which is dependent on the nitrogen source, is within a range of 350° C. to 700° C. The low end of the temperature range utilizes nitrogen-containing gases such as diatomic nitrogen, ammonia, hydrazine, amides and amines which have been converted to a plasma. The higher end of the temperature range relies on thermal decomposition of the nitrogen source for the production of reaction-sustaining radicals.
    Type: Application
    Filed: October 28, 2001
    Publication date: May 2, 2002
    Inventor: Salman Akram
  • Publication number: 20020041967
    Abstract: This invention provides a composite having a hydrophilic film made of amorphous titanium oxide. A film is deposited on a substrate made of, for example, glass or synthetic resin. The film is composed of amorphous titanium oxide partially having structures in which a network of Ti—O—Ti bond is broken to give Ti—OH bond terminals.
    Type: Application
    Filed: August 27, 2001
    Publication date: April 11, 2002
    Inventors: Masatoshi Nakamura, Yoshinori Hatanaka
  • Patent number: 6361825
    Abstract: A pyroelectric detector system, the pyroelectric detector element therefor and the method of making the detector element which comprises an integrated circuit (1) and a pyroelectric detector element (7) coupled to the integrated circuit and thermally isolated from the integrated circuit. The element includes a lead-containing pyroelectric layer having a pair of opposing surfaces and having a thickness to provide a resonant cavity for radiations in a predetermined frequency range. A bottom electrode (5) opaque to radiations in the predetermined frequency range is secured to one of the pair of opposing surfaces and a top electrode (9, 11) is secured to the other of the pair of opposing surfaces which is semi-transparent to radiations in the predetermined frequency range. The top electrode is taken from the group consisting of platinum and nichrome. The lead-containing pyroelectric layer is preferably lead titanate.
    Type: Grant
    Filed: August 20, 1996
    Date of Patent: March 26, 2002
    Assignee: Texas Instruments Incorporated
    Inventors: Howard R. Beratan, Charles M. Hanson
  • Publication number: 20020034586
    Abstract: Zirconium precursors for use in depositing thin films of or containing zirconium oxide using an MOCVD technique have the following general formula: Zr x (OR) y L z wherein R is an alkyl group; L is a 2-diketonate group; x=1 or 2; y=2, 4 or 6; and z=1 or 2.
    Type: Application
    Filed: December 1, 1999
    Publication date: March 21, 2002
  • Patent number: 6355097
    Abstract: Bis(dipivaloylmethanato)diisobutoxytitanium or bis(dipivaloylmethanato)-di(2,2 -dimethyl-1-propoxytitanium per se, or as used as a raw material in a MOCVD process, as is or as a solution in an organic solvent, for example, tetrahydrofuran, produces a dielectric thin film of a fine texture having a film thickness which is proportional to the deposition time and the concentration of the solution.
    Type: Grant
    Filed: May 16, 2001
    Date of Patent: March 12, 2002
    Assignee: Mitsubishi Materials Corporation
    Inventors: Atsushi Itsuki, Taiji Tachibana, Hiroto Uchida, Katsumi Ogi
  • Publication number: 20020022089
    Abstract: The present invention discloses a method of forming a titanium nitride (TiN) thin film on a substrate disposed on a susceptor in a reaction chamber with low carbon content, low resistivity, and excellent step coverage. The method forming the TiN thin film includes feeding vapor of a Tetrakis Diethylamino Titanium (TDEAT) precursor and ammonia (NH3) gas into the reaction chamber, wherein a ratio of a vaporization rate of the TDEAT precursor to a flow rate of the ammonia gas is a value in the range of 1 mg/min:20 sccm to 1 mg/min:100 sccm; maintaining an atmosphere in the reaction chamber at a pressure in the range of 0.5 to 3.0 Torr; and heating the substrate to a temperature in the range of 300 to 400 degrees Celsius (° C.).
    Type: Application
    Filed: August 8, 2001
    Publication date: February 21, 2002
    Inventors: Byoung-Youp Kim, Hyung-Seok Kim
  • Patent number: 6346301
    Abstract: The invention relates to a component having a substrate and a ceramic heat-insulating layer which is arranged thereon. This heat-insulating layer has a columnar structure having ceramic stems which are essentially oriented mainly normal to the surface of the substrate and have a respective stem diameter of less than 2.5 &mgr;m. The invention also relates to a coating apparatus for producing a heat-insulating layer on a substrate and to a method of coating a substrate in the manner of a reactive gas-flow sputtering method.
    Type: Grant
    Filed: March 20, 2001
    Date of Patent: February 12, 2002
    Assignee: Siemens Aktiengesellschaft
    Inventors: Wolfram Beele, Thomas Jung, Peter-Jochen Brand
  • Publication number: 20020001974
    Abstract: A method for manufacturing a zirconium oxide film for use in a semiconductor device by using an atomic layer deposition (ALD) which begins with setting a wafer in a reaction chamber. Thereafter, a zirconium source material of Zr(OC(CH3)3)4 (zirconium tetra—tert—butoxide) is supplied into the reaction chamber and then, an unreacted Zr(OC(CH3)3)4 is removed by a N2 purge or a vacuum purge. Subsequently, an oxygen source material is supplied into the reaction chamber, wherein the oxygen source material is selected from the group consisting of vaporized water (H2O), O2 gas, N2O gas and O3 gas. Finally, an unreacted oxygen source material is purged out from the reaction chamber.
    Type: Application
    Filed: June 20, 2001
    Publication date: January 3, 2002
    Inventor: Lim Chan
  • Patent number: 6335049
    Abstract: A chemical vapor deposition method of forming a high k dielectric layer includes positioning a substrate within a chemical vapor deposition reactor. At least one metal comprising precursor and N2O are provided within the reactor under conditions effective to deposit a high k dielectric layer on the substrate comprising oxygen and the metal of the at least one metal precursor. The N2O is present within the reactor during at least a portion of the deposit at greater than or equal to at least 90% concentration by volume as compared with any O2, O3, NO, and NOX injected to within the reactor. In one implementation, the conditions are void of injection of any of O2, O3, NO, and NOX to within the reactor during the portion of the deposit. In one implementation, a capacitor is formed using the above methods. In preferred implementations, the technique can be used to yield smooth, continuous dielectric layers in the absence of haze or isolated island-like nuclei.
    Type: Grant
    Filed: January 3, 2000
    Date of Patent: January 1, 2002
    Assignee: Micron Technology, Inc.
    Inventor: Cem Basceri
  • Patent number: 6333066
    Abstract: A method for forming a PZT (lead zirconate titanate: Pb(ZrxTi1−x)O3) thin film using a seed layer is provided. In the method for forming a PZT thin film, PZT is grown on a PbO seed layer or a PZT seed layer of a perovskite phase formed by injecting excess Pb. The PbO seed layer or the PZT seed layer of a perovskite phase facilitates creation of perovskite PZT nuclei, thereby growing small and uniform PZT grains consisting of a perovskite phase.
    Type: Grant
    Filed: November 20, 1998
    Date of Patent: December 25, 2001
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Dae-sig Kim
  • Patent number: 6331332
    Abstract: In accordance with the present invention, there is provided a process for depositing diamond-like carbon (DLC) films by cathodic arc evaporation (CAE), wherein the high energy of CAE metal ions causes the cracking reaction of the hydrocarbon gases fed into the vacuum reaction chamber and then results in the deposition of DLC films having high hardness and lubrication. Due to the metallic constituents doped in the DLC films, the films also have good toughness. Moreover, prior to the feeding of hydrocarbon gases for the DLC deposition, the same metal arc source may deposits one or more interlayers of metal, metal nitride, or metal carbide on the substrate so as to further enhance the adhesion of the DLC films to be deposited.
    Type: Grant
    Filed: November 5, 1999
    Date of Patent: December 18, 2001
    Inventor: Da-Yung Wang
  • Publication number: 20010051215
    Abstract: A method for chemical vapor deposition of a TiSixNy film onto a substrate wherein x is greater than zero and no greater than about 5, and y is greater than zero and no greater than about 7, including introducing into a deposition chamber: (i) a substrate; (ii) a source precursor comprising titanium in a vapor state having the formula (I):
    Type: Application
    Filed: April 13, 2001
    Publication date: December 13, 2001
    Applicant: Gelest, Inc.
    Inventors: Barry C. Arkles, Alain E. Kaloyeros
  • Patent number: 6284316
    Abstract: A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a second precursor with the seed layer by CVD. The titanium layer is used to form contacts to active areas of substrate and for the formation of interlevel vias.
    Type: Grant
    Filed: January 20, 2000
    Date of Patent: September 4, 2001
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Singh Sandhu, Donald L. Westmoreland
  • Patent number: 6277436
    Abstract: A liquid delivery MOCVD method for deposition of dielectric materials such as (Ba,Sr) titanates and (Zr,Sn) titanates, in which metal source compounds are dissolved or suspended in solvent and flash vaporized at temperatures of from about 100° C. to about 300° C. and carried via a carrier gas such as argon, nitrogen, helium, ammonia or the like, into a chemical vapor deposition reactor wherein the precursor vapor is mixed with an oxidizing co-reactant gas such as oxygen, ozone, N2O, etc., to deposit the high dielectric metal oxide film on the substrate at a temperature of from about 400° C. to about 1200° C. at a chemical vapor deposition chamber pressure of from about 0.1 torr to about 760 torr. Such process may for example be employed to form a (Ba,Sr) titanate dielectric material wherein at least 60 atomic % of the total metal content of the oxide is titanium.
    Type: Grant
    Filed: December 18, 1998
    Date of Patent: August 21, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Gregory T. Stauf, Jeffrey F. Roeder, Thomas H. Baum
  • Patent number: 6268019
    Abstract: The present invention concerns the deposition of fluorine modified, titanium dioxide films (TiO2) onto hot glass by atmospheric pressure chemical vapor deposition (APCVD) using TiCl4 vapor. The invention is also suitable for depositing other metallic oxide films from their metallic halides such as SnCl4, GeCl4, and VCl4. The present invention provides a process that deposits a novel, fluorine modified, titanium dioxide film (TiO2) onto hot glass by atmospheric pressure chemical vapor deposition using TiCl4 vapor. The process uses injection of TiCl4 into a hot, nonoxygen containing carrier gas and blends the carrier gas and TiCl4 vapor with an oxygen containing gas stream containing a haze reducing quantity of a fluorine containing compound before contacting a surface of hot glass with the blended mixture. The process is capable of depositing a fluorine modified, TiO2 film at deposition rates exceeding 900 Å per second. The crystalline phase of the fluorine modified film is essentially anatase.
    Type: Grant
    Filed: May 19, 1999
    Date of Patent: July 31, 2001
    Assignee: ATOFINA Chemicals, Inc.
    Inventor: Glenn P. Florczak
  • Publication number: 20010006724
    Abstract: For coating a cutting tool with an aluminum oxide layer, a bonding layer has been provided that is preferably formed by aluminum titanate and has a flake-like crystal structure. This bonding layer improves the adherence of an aluminum oxide layer, in particular to underlying titanium nitride, titanium carbide, or titanium carbonitride layers.
    Type: Application
    Filed: December 22, 2000
    Publication date: July 5, 2001
    Inventor: Helga Holzschuh
  • Patent number: 6238738
    Abstract: A chemical vapor deposition process for laying down a tin or titanium oxide coating on a glass substrate through the use of an organic oxygen-containing compound and the corresponding metal tetrachloride. The organic oxygen compound is preferably an ester having an alkyl group with a &bgr; hydrogen in order to obtain a high deposition rate. The resulting article has a tin or titanium oxide coating which can be of substantial thickness because of the high deposition rates attainable with the novel process, and, in the case of titanium oxide coating possesses a desirable refractive index greater than 2.4. The coating growth rates resulting from the method of the present invention may be at least 130 Å per second.
    Type: Grant
    Filed: September 7, 2000
    Date of Patent: May 29, 2001
    Assignee: Libbey-Owens-Ford Co.
    Inventor: Richard J. McCurdy
  • Patent number: 6235649
    Abstract: A method of forming a (Ba, Sr) TiO3 high dielectric constant thin film with sufficient coverage is provided. A Ba material, an Sr material and a Ti material including bis (t-butoxy) bis (dipivaloylmethanate) titanium are dissolved in an organic solvent to obtain a solution material. The solution material is vaporized, so that material gas is obtained. A (Ba, Sr) TiO3 thin film is formed on a substrate by CVD reaction using the material gas.
    Type: Grant
    Filed: November 22, 1999
    Date of Patent: May 22, 2001
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Takaaki Kawahara, Mikio Yamamuka, Tsuyoshi Horikawa, Masayoshi Tarutani, Takehiko Sato, Shigeru Matsuno
  • Patent number: 6228420
    Abstract: A method to maintain a consistent thin film thickness deposited by chemical vapor deposition is described in which method a compensative coefficient K is provided. The initial preset deposition time T0 is multiplied by the compensative coefficient K to obtain an actual deposition time T, where T=K×T0. Using the actual deposition time T to conduct the deposition, the expected thickness of the thin film is obtained.
    Type: Grant
    Filed: October 20, 1999
    Date of Patent: May 8, 2001
    Assignee: United Microelectronics Corp.
    Inventors: Juen-Kuen Lin, Chien-Hsin Lai, Hao-Kuang Chiu, Fu-Yang Yu
  • Patent number: 6210744
    Abstract: A method for coating a component with a thermal barrier coating, includes placing the component in a coating chamber and maintaining the component at a component temperature. A vacuum is established in the coating chamber. The process parameters vacuum pressure and component temperature are controlled together, at least during the coating process with a deposition of material forming the thermal barrier coating. The control takes place in such a way that the parameters are in a respective set-point value range and the thermal barrier coating grows with a columnar structure on the component. A coating device is also provided.
    Type: Grant
    Filed: November 30, 1998
    Date of Patent: April 3, 2001
    Assignee: Siemens Aktiengesellschaft
    Inventors: Burkhard Hayess, Wolfram Beele
  • Patent number: 6207302
    Abstract: First and second insulating layers in an EL device are respectively composed of Al2O3/TiOx:Ba laminated layers. The Al2O3/TiOx:Ba laminated layers are formed by alternately laminating Al2O3 layers and TiO2 layers added with Ba by an ALE method. Adding Ba into the TiO2 layers mitigates a change in resistivity thereof with respect to a change in temperature. As a result, the EL device provides an excellent voltage withstanding performance which is stable against the changes in the temperature.
    Type: Grant
    Filed: March 2, 1998
    Date of Patent: March 27, 2001
    Assignee: DENSO Corporation
    Inventors: Kazuhiko Sugiura, Masayuki Katayama, Nobuei Ito