Abstract: This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapour-phase pulses of at least one metal source material, and at least one oxygen source material are fed into a reaction space and contacted with the substrate. According to the invention, an yttrium source material and a zirconium source material are alternately used as the metal source material so as to form an yttrium-stabilised zirconium oxide (YSZ) thin film on a substrate.

Abstract: A process for manufacturing glass containers completely or partly treated with the chemical vapor deposition (CVD) technique, by which a layer of oxides of Si and/or B and/or Ti and/or Zr and/or Ta and/or Al and/or mixtures of one or more of said elements is deposited with HTAP-MOCVD technique, includes the step of carrying our the deposition during the annealing of the container, by supplying into the annealing furnace a suitable gas mixture of precursor, reactant and transport gas.

Abstract: A method of making a coated article (e.g., window unit), and corresponding coated article are provided. A layer of or including diamond-like carbon (DLC) is formed on a glass substrate. Then, a protective layer is formed on the substrate over the DLC inclusive layer. During heat treatment (HT), the protective layer prevents the DLC inclusive layer from significantly burning off. Thereafter, the resulting coated glass substrate may be used as desired, it having been HT and including the protective DLC inclusive layer.

Abstract: The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO2 film on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiO2 film on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrO2 film forming sequences and the SiO2 film forming sequences are repeated for the adjusted number of times of performances.

Abstract: Wear resistance of the prior-art Ti(C,N) layers can be considerably enhanced by optimizing the grain size and microstructure. This invention describes a method to obtain controlled, fine, equiaxed grain morphology in Ti(C,N) layers produced using moderate temperature CVD (MTCVD). The method includes the step of doping using CO, CO2, ZrC14 and A1C13 or combinations of these to control the grain size and shape. Doping has to be controlled carefully in order to avoid nanograined structures and oxidization. Doping is further controlled to produce grain size that is from about 50 to about 300 nm, preferably from about 50 to about 150; a lack of any strong preferred growth orientation; and a length-to-width ratio (L/W) of less than 3 and only with a slight to moderate XRD line broadening.

Abstract: A modified atomic plasma deposition (APD) procedure is used to produce amorphous, nonconformal thin metal film coatings on a variety of substrates. The films are porous, mesh-like lattices with imperfections such as pinholes and pores, which are useful as scaffolds for cell attachment, controlled release of bioactive agents and protective coatings.

Abstract: A method for performing a vapor deposition process is described. The vapor deposition process involves the deposition of a thin film, such as a ruthenium (Ru), rhenium (Re) or rhodium (Rh) film, on a substrate using a solid-phase or liquid-phase precursor. The method facilitates the initiation of gas lines to supply dilution gas(es), carrier gas(es) and precursor vapor to the deposition system, the pre-heating and heating of the substrate, the pre-conditioning of the film precursor vaporization system, and the flow stabilization of the carrier gas(es) and the precursor vapor, for example.

Abstract: A method of making a photoactive coating includes depositing a first coating material containing zirconium oxide over at least a portion of a substrate and depositing a second coating material containing titanium oxide over at least a portion of the first coating material to provide a coated substrate. At least one of the first and second coating materials is deposited by pyrolytic deposition.

Abstract: Oxygen free, solution based zirconium precursors for use in ALD processes are disclosed for growing ZrO2 or other Zr compound films in a self-limiting and conformal manner. An oxygen free, solution based ALD precursor of (t-BuCp)2ZrMC2 is particular useful for depositing ZrO2 or other Zr compound films.

Abstract: The present invention provides a heretofore-unknown use for zirconium nitride as a hydrogen peroxide compatible protective coating that was discovered to be useful to protect components that catalyze the decomposition of hydrogen peroxide or corrode when exposed to hydrogen peroxide. A zirconium nitride coating of the invention may be applied to a variety of substrates (e.g., metals) using art-recognized techniques, such as plasma vapor deposition. The present invention further provides components and articles of manufacture having hydrogen peroxide compatibility, particularly components for use in aerospace and industrial manufacturing applications. The zirconium nitride barrier coating of the invention provides protection from corrosion by reaction with hydrogen peroxide, as well as prevention of hydrogen peroxide decomposition.

Abstract: A method is used for forming an SrTiO3 film on a substrate placed and heated inside a process chamber while supplying a gaseous Ti source material, a gaseous Sr source material, and a gaseous oxidizing agent into the process chamber. Sr(C5(CH3)5)2 is used as the Sr source material. The method performs a plurality of cycles to form the SrTiO3 film. Each cycle sequentially includes supplying the gaseous Ti source material into the process chamber and thereby adsorbing it onto the substrate; supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Ti source material thus adsorbed and forming a Ti-containing oxide film; supplying the gaseous Sr source material into the process chamber and thereby adsorbing it onto the Ti-containing oxide film; and supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Sr source material thus adsorbed and forming an Sr-containing oxide film.

Abstract: The present invention relates to a process for the vacuum-based deposition of a titanium oxide layer from the gas phase on a substrate, wherein deposition is carried out from a source containing titanium oxide at a deposition rate of less than 25 nm/s in an oxygen-containing atmosphere and at a substrate temperature of less than 500° C. and, after deposition, the coated substrate is heat treated for a period of at least 30 minutes in an oxygen-containing atmosphere at temperatures in the range from 200° C. to 1000° C.

Abstract: The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercritical fluid is utilized to introduce multiple precursors into the reaction chamber during ALD. The invention can be utilized to form any of various materials, including metal-containing materials, such as, for example, metal oxides, metal nitrides, and materials consisting of metal. Metal oxides can be formed by utilizing a supercritical fluid can be utilized to introduce a metal-containing precursor into reaction chamber, with the precursor then forming a metal-containing layer over a surface of a substrate. Subsequently, the metal-containing layer can be reacted with oxygen to convert at least some of the metal within the layer to metal oxide.

Abstract: A method for fabricating a photonic crystal structure is disclosed herein for forming a cavity-type or a pillar type photonic crystal structure of a large area. By the property that a hetero-interface inhibits epitaxial growth, a patterned film layer is formed over the epitaxy substrate, so a photonic crystal structure is grown vertically by epitaxy in area outside of the patterned film layer on the epitaxy substrate. Furthermore, by designing the pattern of the patterned film, a defect mode photonic crystal structure such as an optical waveguide, an optical resonator and a beam splitter can be formed.

Abstract: A method for depositing a film onto a substrate is provided. The substrate is contained within a reactor vessel at a pressure of from about 0.1 millitorr to about 100 millitorr. The method comprises subjecting the substrate to a reaction cycle comprising i) supplying to the reactor vessel a gas precursor at a temperature of from about 20° C. to about 150° C. and a vapor pressure of from about 0.1 torr to about 100 torr, wherein the gas precursor comprises at least one organo-metallic compound; and ii) supplying to the reactor vessel a purge gas, an oxidizing gas, or combinations thereof.

Abstract: This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapor-phase pulses of at least one metal source material, and at least one oxygen source material are fed into a reaction space and contacted with the substrate. According to the invention, an yttrium source material and a zirconium source material are alternately used as the metal source material so as to form an yttrium-stabilized zirconium oxide (YSZ) thin film on a substrate.

Abstract: The present invention is directed to high coordination sphere Group 2 metal ?-diketiminate compositions, such as bis(N-(2,2-methoxyethyl)-4-(2,2-methoxyethylimino)-2-penten-2-aminato) barium; and the deposition of the metals of such metal ligand compositions by chemical vapor deposition, pulsed chemical vapor deposition, molecular layer deposition or atomic layer deposition to produce Group 2 metal containing films, such as barium strontium titanate films or strontium titanate films or barium doped lanthanate as high k materials for electronic device manufacturing.

Abstract: A process for the production of a zinc oxide coating on a moving glass substrate provides a precursor mixture of a dialkylzinc compound, an oxygen-containing compound and an inert carrier gas. The precursor mixture is directed along a surface of the glass substrate in an atmospheric pressure, on-line, chemical vapor deposition process. The precursor mixture is reacted at the surface of the glass substrate to form a zinc oxide coating, essentially devoid of nitrogen, at a growth rate of >100 ?/second.

Abstract: The invention relates to a structure, comprising a substrate supporting a layer with a photocatalytic and anti-soiling property on at least part of the surface thereof, said layer being based on titanium dioxide (TiO2) which is at least partially crystallized in the anatase form thereof. Said structure is characterised in comprising a sublayer (SC) directly under at least one TiO2 layer, said sublayer having a crystallographic structure which provides assistance to crystallization by heteroepitaxial growth in the anatase form of the TiO2-based upper layer, the photocatalytic property being obtained without any heating step.

Abstract: In one embodiment, a method for depositing materials on a substrate is provided which includes forming a titanium nitride barrier layer on the substrate by sequentially exposing the substrate to a titanium precursor containing a titanium organic compound and a nitrogen plasma formed from a mixture of nitrogen gas and hydrogen gas. In another embodiment, the method includes exposing the substrate to the deposition gas containing the titanium organic compound to form a titanium-containing layer on the substrate, and exposing the titanium-containing layer disposed on the substrate to a nitrogen plasma formed from a mixture of nitrogen gas and hydrogen gas. The method further provides depositing a conductive material containing tungsten or copper over the substrate during a vapor deposition process. In some examples, the titanium organic compound may contain methylamido or ethylamido, such as tetrakis(dimethylamido)titanium, tetrakis(diethylamido)titanium, or derivatives thereof.

Abstract: A method of forming a coated body composed of small columnar crystals coated using the MTCVD process. Wear resistance of the prior-art Ti(C,N) layers can be considerably enhanced by optimising the grain size and microstructure. Considerably better wear resistance in, for example in many carbon steels, can be obtained by modifying the grain size and morphology of prior art MTCVD Ti(C,N) coatings. The method includes a step of doping by using CO, CO2, ZrCl4, HfCl4 and AlCl3 or combinations of these to ensure the control of the grain size and shape. Doping has to be controlled carefully in order to maintain the columnar structure and also in order to avoid nanograined structures and oxidisation. The preferred grain size should be in the sub-micron region with the grain width of from about 30 to about 300 nm. The length to width ratio should be more than 5, preferably more than 10 and the coating should exhibit a strong preferred growth orientation along 422 or 331. The XRD line broadening should be weak.

Abstract: A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—H3 fragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more H3Si—NR02 (R0?SiH3, R, R1 or R2, defined below) groups selected from the group consisting of one or more of: wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2, and purging away the unreacted silicon-containing source.

Abstract: The present invention relates to a method for depositing a dielectric material comprising a transition metal compound. After providing a substrate, a first pre-cursor comprising a transition metal compound and a second pre-cursor predominantly comprising at least one of water vapour, ammonia and hydrazine are successively applied on the substrate for forming a first layer of transition metal containing material. In a next step the first pre-cursor and a third pre-cursor comprising at least one of ozone and oxygen are successively applied on the first layer for forming a second layer of the transition metal containing material.

Abstract: An environmental coating system for silicon based substrates wherein a porous intermediate barrier layer having an elastic modulus of about 30 to 150 GPa is provided between a silicon metal containing bondcoat and a ceramic top environmental barrier layer.

Abstract: This relates to an improvement to the process of aluminization or activated cementation in which a donor cement containing the aluminium is attacked at high temperature and in a neutral or reducing atmosphere by a gaseous ammonium halide to form a gaseous aluminium halide which decomposes on contact with a nickel-based substrate depositing aluminium metal thereon. According to the invention the aluminium halide is at least partly replaced by a zirconium halide leading to the inclusion of zirconium in the deposit. Improvement in the protection of the hot parts of aircraft engines made of nickel-based superalloy. No figure is to be published.

Abstract: The present invention provides a process for a producing a coating float-glass substrate, comprising chemical vapor depositing at least one titanium precursor on at least part of at least one face of a float-glass substrate produced in a float-bath chamber, to produce a photocatalytic coating containing at least partially crystalline titanium oxide.

Abstract: A method for deposition of titania, and titania-containing, thin films by CVD, using an atmospheric pressure glow discharge plasma as a major source of reaction, which leads to film properties, and film growth rates, normally only achievable (by atmospheric pressure CVD) with significantly higher substrate temperatures.

Abstract: The present invention relates to a metal cutting tool insert with a coating comprising a metal oxide multilayer, which exhibits especially high resistance to plastic deformation as well as excellent resistance to flank and crater wear and high resistance to flaking, particular when used for machining of low carbon steel and stainless steel. The invention also relates to a method of making such a cutting tool insert.

Abstract: A coating system is applied to a ceramic evaporator boat to extend the life of the boat. The coating system includes a ceramic layer is applied over the surface of an evaporator boat reservoir. Optionally, a refractory metal layer is applied as an intermediate layer between the surface of the evaporator boat reservoir and the ceramic layer. The ceramic layer is form of a ceramic material selected from metal borides, metal nitrides, metal carbides, metal oxides, and combinations thereof, and wherein the metal component of the ceramic material is selected from zirconium, aluminum, titanium, silicon, tantalum, vanadium, and combinations thereof. The resulting coating system reduces corrosion and/or erosion that occur primarily in the reservoir region of the evaporator boat. One method of applying or depositing the ceramic layer or the optional refractory metal layer includes sputtering.

Abstract: A component (10) for a semiconductor processing apparatus includes a matrix (10a) defining a shape of the component, and a protection film (10c) covering a predetermined surface of the matrix. The protection film (10c) consists essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium. The protection film (10c) has a porosity of less than 1% and a thickness of 1 nm to 10 ?m.

Abstract: The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercritical fluid is utilized to introduce multiple precursors into the reaction chamber during ALD. The invention can be utilized to form any of various materials, including metal-containing materials, such as, for example, metal oxides, metal nitrides, and materials consisting of metal. Metal oxides can be formed by utilizing a supercritical fluid can be utilized to introduce a metal-containing precursor into reaction chamber, with the precursor then forming a metal-containing layer over a surface of a substrate. Subsequently, the metal-containing layer can be reacted with oxygen to convert at least some of the metal within the layer to metal oxide.

Abstract: The present invention provides for titanium oxide-based photocatalysts having a general formula of TiO2-X-?CXN? and self-cleaning materials that are prepared by substituting O of pure TiO2 with C and N. A preparation method comprising a process for forming thin films of TiO2-X-?CXN? by using gases such as Ar, N2, CO2, CO and O are used for reactive sputtering, and a process of heat treating at around 500° C., thereby crystallizing, is provided. The titanium oxide-based photocatalysts having a general formula of TiO2-X-?CXN? and self-cleaning materials according to the present invention have a smaller optical bandgap compared to pure titanium oxides, and therefore, the photocatalysts can be activated under the visible light range. In addition, they comprise only pure anatase crystallization phase, and since the crystallized particles are small in size, the efficiency and self-cleaning effect of the photocatalysts are very high.

Abstract: A method of depositing a crystalline ?-Al2O3 layer onto a cutting tool insert by Chemical Vapor Deposition at a temperature of from about 625 to about 800° C. includes the following steps: depositing a from about 0.1 to about 1.5 ?m layer of TiCxNyOz where x+y+z>=1 and z>0, preferably z>0.2; treating said layer at 625-1000° C. in a gas mixture containing from about 0.5 to about 3 vol-% O2, preferably as CO2+H2, or O2+H2, for a short period of time from about 0.5 to about 4 min, optionally in the presence of from about 0.5 to about 6 vol-% HCl; and depositing said Al2O3-layer by bringing said treated layer into contact with a gas mixture containing from about 2 to about 10 vol-% of AlC3, from about 16 to about 40 vol-% of CO2, in H2 and 0.8-2 vol-% of a sulphur-containing agent, preferably H2S, at a process pressure of from about 40 to about 300 mbar. Also included is a cutting tool insert with a coating including at least one ?-Al2O3-layer.

Abstract: A method for making a coated cutting tool insert by depositing by CVD, onto a cemented carbide, titanium based or ceramic substrate a hard layer system, having a total thickness of from about 2 to about 50 ?m, comprising at least one layer selected from titanium carbide, titanium nitride, titanium carbonitride, titanium carboxide and aluminum oxide, and an outer, from about 1 to about 15 ?m thick, aluminum oxide layer or (Al2O3+ZrO2)*N multilayer, a penultimate outermost layer of TiOx, where x ranges from about 1 to about 2, and an outermost, from about 0.3 to about 2 ?m thick, TiCxNyOz layer, where x+y+z=1, x?0, y?0, and z?0, followed by a post-treatment removing at least said outermost layer on the edge-line and on the rake face.

Abstract: A method for producing a substrate having a carbon-doped titanium oxide layer, which is excellent in durability (high hardness, scratch resistance, wear resistance, chemical resistance, heat resistance) and functions as a visible light responding photocatalyst, is provided. The surface of a substrate, which has at least a surface layer comprising titanium, a titanium alloy, a titanium alloy oxide, or titanium oxide, is heat-treated in a combustion gas atmosphere of a gas consisting essentially of a hydrocarbon, or in a gas atmosphere consisting essentially of a hydrocarbon, such that the surface temperature of the substrate is 900 to 1,500° C.; or a combustion flame of a gas consisting essentially of a hydrocarbon, is directly struck against the surface of the substrate for heat treatment such that the surface temperature of the substrate is 900 to 1,500° C., thereby forming a carbon-doped titanium oxide layer, whereby the substrate having the carbon-doped titanium oxide layer is obtained.

Abstract: The precoat film forming method of a film forming device having a loading table for loading the object, includes a deposition step of feeding processing gas inside the film forming device and depositing a precoat TiN film on the surface of the loading table and a stabilization step of reducing and stabilizing the precoat film on the loading table, wherein the precoat film formed on the loading table at the deposition step has a film thickness within a range such that even if the film thickness of the precoat film changes, a radiation heat quantity from the loading table becomes generally constant. Therefore, as the thermal stability is maintained at the film forming process of semiconductor wafers, it is possible to improve the reproducibility in the film forming process.

Abstract: An embodiment of the present invention provides a method of making an electronically tunable dielectric material comprising mixing particles of at least one electronically tunable dielectric phase and particles of at least one compound of low loss complex perovskites, and particles of optional one other family of materials; and sintering the material.

Abstract: A chemical vapor deposition method of forming a barium strontium titanate comprising dielectric layer. A substrate is positioned within a reactor. Barium and strontium are provided within the reactor by flowing at least one metal organic precursor to the reactor. Titanium is provided within the reactor. At least one oxidizer is flowed to the reactor under conditions effective to deposit a barium strontium titanate comprising dielectric layer on the substrate. In one implementation, the oxidizer comprises H2O. In one implementation, the oxidizer comprises H2O2. In one implementation, the oxidizer comprises at least H2O and at least another oxidizer selected from the group consisting of O2, O3, NOx, N2O, and H2O2, where “x” is at least 1. In one implementation, the oxidizer comprises at least H2O2 and at least another oxidizer selected from the group consisting of O2, O3, NOx, and N2O, where “x” is at least 1.

Abstract: A method of forming a vapor deposited film of a silicon oxide on the surface of a substrate by holding the substrate to be treated in a plasma-treating chamber, and effecting the treatment with a chemical plasma by feeding an organosilicon compound and an oxidizing gas into the treating chamber, wherein the rate of feeding the oxidizing gas is varied while maintaining constant the rate of feeding the organosilicon compound gas into the plasma-treating chamber during the formation of the vapor deposited film. A chemical vapor deposited film is formed featuring excellent adhesiveness, softness, flexibility, oxygen-barrier property and water-barrier property.

Abstract: Precursors suitable for chemical vapour deposition, especially ALD, of hafnium oxide or zirconium oxide, have the general formula: (R1Cp)2MR2 wherein Cp represents a cyclopentadienyl ligand, R1 is H or a substituting alkyl group, alkoxy group or amido group of the Cp ligand, R2 is an alkyl group, an alkoxy group or an amido group and M is hafnium or zirconium.

Abstract: A method of forming a layer of high-k dielectric material in an integrated circuit includes preparing a silicon substrate; forming a high-k dielectric layer by a sequence of ALD cycles including: depositing a first layer of metal ligand using ALD with an oxygen-containing first precursor; and depositing a second layer of metal ligand using ALD with a second precursor; repeating the sequence of ALD cycles N times until a near-critical thickness of metal oxide is formed; annealing the substrate and metal oxide layers every N ALD cycles in an elevated temperature anneal; repeating the sequence of ALD cycles and elevated temperature anneals until a high-k dielectric layer of desired thickness is formed; annealing the substrate and the metal oxide layers in a final annealing step; and completing the integrated circuit.

Abstract: A method for forming a coated substrate is disclosed. The method comprises depositing an undercoating layer and depositing a functional coating comprising a material which can be present in more than one crystal structure over the undercoating layer, wherein there is a critical deposition thickness at which the functional coating transforms from a first polycrystalline film made up predominantly of the material having a first crystal structure to a second polycrystalline film made up predominantly of the same material having a second crystal structure.

Abstract: The subject of the invention is the use of a material composed of a substrate equipped with a coating based on titanium oxide surmounted by a thin hydrophilic layer forming at least one part of the outer surface of said material and that is not composed of titanium oxide, as a material that prevents the deposition of mineral soiling on said outer surface in the absence of water runoff.

Abstract: A film formation method for forming a metal oxide film includes loading a target object into a process container configured to maintain a vacuum therein; supplying a film formation source material into the process container; supplying an oxidizing agent into the process container; and causing the film formation source material and the oxidizing agent to react with each other, thereby forming a metal oxide film on the target object. The film formation source material is an organic metal compound containing a metal of the metal oxide film and prepared by mixing a first organic metal compound that is solid at room temperature and has a higher vapor pressure with a second organic metal compound that is liquid at room temperature such that the organic metal compound is liquid at room temperature.

Abstract: Ti, Zr Hf and La precursors for use in MOCVD techniques have a ligand of the general formula OCR1(R2)CH2X, wherein R1 is H or an alkyl group, R2 is an optionally substituted alkyl group and X is selected from OR and NR2, wherein R is an alkyl group or a substituted alkyl group.

Abstract: A method for improving atomic layer deposition (ALD) performance and an apparatus thereof are disclosed. The apparatus alternates the process temperature of the different ALD steps rapidly, and the process temperature of each step is determined in accordance with the specific precursor and the substrate surface used. In case a higher process temperature is needed, a plurality of heating units of the apparatus increases and keeps the temperature of the deposited substrate to complete surface reaction. When the lower process temperature is needful for the next ALD step, the heating units are turned off to reduce the temperature of the deposited substrate and a gas flow puffed to the heater and the deposited substrate to assist in temperature cooling.

Abstract: A method is used for forming an SrTiO3 film on a substrate placed and heated inside a process chamber while supplying a gaseous Ti source material, a gaseous Sr source material, and a gaseous oxidizing agent into the process chamber. Sr(C5(CH3)5)2 is used as the Sr source material. The method performs a plurality of cycles to form the SrTiO3 film. Each cycle sequentially includes supplying the gaseous Ti source material into the process chamber and thereby adsorbing it onto the substrate; supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Ti source material thus adsorbed and forming a Ti-containing oxide film; supplying the gaseous Sr source material into the process chamber and thereby adsorbing it onto the Ti-containing oxide film; and supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Sr source material thus adsorbed and forming an Sr-containing oxide film.

Abstract: The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses.

Abstract: A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.

Abstract: Coated milling insert has a WC—Co cemented carbide with a low content of cubic carbides and a highly W-alloyed binder phase and a coating including an inner layer of TiCxNy with columnar grains followed by a layer of ?-Al2O3 and a top layer of TiN. The coated milling insert is particularly useful for milling of grey cast iron with or without cast skin under wet conditions at low and moderate cutting speeds and milling of nodular cast iron and compacted graphite iron with or without cast skin under wet conditions at moderate cutting speeds.