Ion Plating Or Implantation Patents (Class 427/523)
  • Patent number: 6902773
    Abstract: The fabrication of an overcoat layer starts with a low energy ion beam to avoid magnetic layer implantation problems, followed by higher deposition energies where the higher energy atoms are implanted into the previously formed lower energy overcoat layer, rather than the magnetic layer. The energy gradient ion beam deposition process therefore results in a thin overcoat layer that is denser than a comparable layer formed by low energy magnetron sputtering, and which overcoat layer provides good mechanical and corrosion protection to the magnetic layer.
    Type: Grant
    Filed: November 21, 2000
    Date of Patent: June 7, 2005
    Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
    Inventors: Daryl J. Pocker, Jan-Ulrich Thiele, Richard L. White, Bing K. Yen
  • Patent number: 6899928
    Abstract: The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion beams for the ion beam assisted deposition whereby thick layers can be deposited without degradation of the desired properties by the material. The ability to deposit thicker layers without loss of properties provides a significantly broader deposition window for the process.
    Type: Grant
    Filed: July 29, 2002
    Date of Patent: May 31, 2005
    Assignee: The Regents of the University of California
    Inventors: James R. Groves, Paul N. Arendt, Robert H. Hammond
  • Patent number: 6893543
    Abstract: A method and apparatus for producing an information carrier which has at least two solid material interfaces at which information is, or may be applied and where the information is stored by local modulation of at least one characteristic of the solid material. Reflection of electromagnetic radiation at the interface depends on this characteristic. The method and apparatus applies at least one intermediate layer between the two solid material interfaces. The intermediate layer transmits the radiation and is at least predominantly made of either SixCy or SivNw, or both.
    Type: Grant
    Filed: July 28, 1999
    Date of Patent: May 17, 2005
    Assignee: Unaxis Balzers AG
    Inventor: Eduard Kügler
  • Patent number: 6864042
    Abstract: A magnetic recording medium is formed with a distribution of low coercivity regions functioning as a transition pattern for servo information capable of being sensed by a read/write head by exposing a masked magnetic layer to ions to change the coercivity of the exposed magnetic layer without substantially affecting the topography of the magnetic layer. Embodiments of the present invention include forming a series of substantially radially extending low coercivity regions used to divide the magnetic layer into a plurality of sectors comprising substantially concentric circumferentially extending data tracks by exposing a masked magnetic layer having a high coercivity, i.e. from about 2000 Oe to about 10000 Oe, to one or more heavy atom ion bombardments of gaseous ions, e.g. argon ions, at a dose of about 1×1013 atoms/cm2 to about 9×1015 atoms/cm2 having an implantation energy of about 10 KeV to about 50 KeV.
    Type: Grant
    Filed: July 25, 2001
    Date of Patent: March 8, 2005
    Assignee: Seagate Technology LLC
    Inventors: David Kuo, Xinwei Li, Jing Gui
  • Patent number: 6855232
    Abstract: A method for making a magnetic disk comprises forming first and second protective carbon layers on a magnetic layer. The first protective carbon layer is predominantly SP3 carbon. The second protective carbon layer comprises about 50% or less SP3 carbon. The second protective carbon layer is very thin, e.g. between 0.1 and 1.0 nm thick. A lubricant layer (e.g. a perfluoropolyether lubricant) is applied to the second protective carbon layer. The second protective carbon layer facilitates improved cooperation between lubricant and the disk.
    Type: Grant
    Filed: December 5, 2003
    Date of Patent: February 15, 2005
    Assignee: Komag, Inc.
    Inventors: Bruce Jairson, Ching Jackie Tsoi, Wen Liu, Shigeto Hashimoto, Eric Woo Hock Yong, Tsutomu Tom Yamashita
  • Patent number: 6844031
    Abstract: A single, or common, ion beam source is utilized for ion beam deposition (IBD) of defect-free multilayer coatings, e.g., multilayer, carbon-based protective overcoats for magnetic and/or magneto-optical (MO) data recording/information storage and retrieval media such as hard disks. According to the inventive methodology, a plurality of source gas supply means for supplying a single IBD source with different source gases for each of the layers of the multilayer are selectively operated in “vent” and “run” modes by means of a plurality of valves, the opening and closing of which are determined by a programmable gas flow controller. The inventive method and apparatus advantageously provide IBD of multilayer coatings with minimum cross-contamination of individual layers, at a reduced equipment cost and size obtained by elimination of the need for separate ion beam sources and associated vacuum pump for each constituent layer of the multilayer.
    Type: Grant
    Filed: April 5, 2004
    Date of Patent: January 18, 2005
    Assignee: Seagate Technology LLC
    Inventors: Paul Stephen McLeod, Mark A. Shows
  • Patent number: 6818257
    Abstract: Systems to achieve both more uniform and particle free DLC deposition is disclosed which automatically cycles between modes to effect automatic removal of carbon-based buildups or which provides barriers to achieve proper gas flow involves differing circuitry and design parameter options. One ion source may be used in two different modes whether for DLC deposition or not through automatic control of gas flow types and rates and through the control of the power applied to achieve maximum throughput or other desired processing goals. Arcing can be controlled and even permitted to optimize the overall results achieved.
    Type: Grant
    Filed: September 17, 2002
    Date of Patent: November 16, 2004
    Assignee: Advanced Energy Industries, Inc.
    Inventors: Michael S. Amann, Michael Kishinevsky, Andrew Shabalin, Colin Quinn
  • Publication number: 20040222083
    Abstract: A method for treating a silicon substrate is described. The silicon substrate is placed into a sputtering equipment. A sputtering step is performed to simultaneously dry clean and amorphize the silicon substrate surface by using the sputtering equipment. A titanium film is deposited on the silicon substrate by the sputtering equipment.
    Type: Application
    Filed: January 29, 2004
    Publication date: November 11, 2004
    Inventor: Su-Chen Fan
  • Publication number: 20040224092
    Abstract: Modified strain regions are created in correlation to strain reactive structures that are subjected to a predetermined dimensional precision adjustment. The modified strain regions are created by impacting incident particles into exposed regions of the strain reactive structures. The irradiation by the incident particles creates a predetermined material disruption and consequently a change in strain energy. The strain energy, and the associated dimensional adjustment is dependent on the irradiation process and the sum properties of the modified strain regions and the strain reactive structure.
    Type: Application
    Filed: June 4, 2004
    Publication date: November 11, 2004
    Inventors: John Edward Eric Baglin, Richard D. Bunch, Linden James Crawforth, Eric W. Flint, Andrew J. Kellock, Timothy Clark Reiley
  • Publication number: 20040224161
    Abstract: A substrate is coated with a layer(s) or coating(s) that includes, for example, amorphous carbon in a form of diamond-like carbon (DLC). In certain embodiments, the DLC inclusive layer may be doped with at least one polar inducing dopant (e.g., Boron, Nitrogen, and/or any other suitable polar inducing dopant) in order to make the layer more polar and thus more hydrophilic so as to have a lower contact angle &thgr;. In other embodiments, where such doping is optional, the DLC may be exposed to ultraviolet (UV) radiation in a manner sufficient to cause the contact angle &thgr; of the DLC layer to drop into a hydrophilic range (e.g., less than or equal to about 20 degrees).
    Type: Application
    Filed: June 21, 2004
    Publication date: November 11, 2004
    Applicant: Guardian Industries Corp.
    Inventor: Vijayen S. Veerasamy
  • Publication number: 20040219376
    Abstract: A method for manufacturing a heat resistant resin film with a metal thin film is configured to include the steps of: biasing a conductive material to one surface of the heat resistant resin film; and applying electrolytic plating to the heat resistant resin film while using the conductive material biased to the one surface of the heat resistant resin film as an electrode, so as to form a metal thin film on the heat resistant resin film.
    Type: Application
    Filed: June 1, 2004
    Publication date: November 4, 2004
    Applicant: FUJI XEROX CO., LTD.
    Inventors: Ryuichiro Maeyama, Kazuyoshi Itoh, Yasutaka Naito, Hideaki Ohara
  • Patent number: 6808606
    Abstract: This invention relates to a method of making a window (e.g., vehicle windshield, architectural window, etc.), and the resulting window product. At least one glass substrate of the window is ion beam treated and/or milled prior to application of a coating (e.g., sputter coated coating) over the treated/milled substrate surface and/or prior to heat treatment. As a result, defects in the resulting window and/or haze may be reduced. The ion beam used in certain embodiments may be diffused. In certain embodiments, the ion beam treating and/or milling is carried out using a fluorine (F) inclusive gas(es) and/or argon/oxygen gas(es) at the ion source(s). In certain optional embodiments, F may be subimplanted into to treated/milled glass surface for the purpose of reducing Na migration to the glass surface during heat treatment or thereafter, thereby enabling corrosion and/or stains to be reduced for long periods of time.
    Type: Grant
    Filed: September 10, 2002
    Date of Patent: October 26, 2004
    Assignee: Guardian Industries Corp.
    Inventors: Scott V. Thomsen, Rudolph Hugo Petrmichl, Vijayen S. Veerasamy, Anthony V. Longobardo, Henry A. Luten, David R. Hall, Jr.
  • Patent number: 6797334
    Abstract: In order to deopsit a high-grade and extra-thin film without causing damage to the substrate at a relatively low temperature, the present invention provides a method for forming a cluster which is a lumpy group of atoms or molecules of a reactive substance at the room temperature under the atmospheric pressure, irradiating electrons onto clusters, irradiating the resulting cluster ions onto a substrate surface by accelerating by an acceleration voltage, and at the same time or alternately, irradiating one or more component gases of the deposit film onto the substrate surface, thereby depositing a thin film on the substrate surface through reaction.
    Type: Grant
    Filed: August 27, 2003
    Date of Patent: September 28, 2004
    Assignees: Research Development Corporation of Japan, Sanyo Electric Co., Ltd.
    Inventors: Makoto Akizuki, Mitsuaki Harada, Satoru Ogasawara, Atsumasa Doi, Isao Yamada, Jiro Matsuo
  • Publication number: 20040180216
    Abstract: A coated article is provided which includes a layer including titanium oxycarbide. In order to form the coated article, a layer of titanium oxide is deposited on a substrate by sputtering or the like. After sputtering of the layer including titanium oxide, an ion beam source(s) is used to implant at least carbon ions into the titanium oxide. When implanting, the carbon ions have sufficient ion energy so as to knock off oxygen (O) from TiOx molecules so as to enable a substantially continuous layer comprising titanium oxycarbide to form near a surface of the previously sputtered layer.
    Type: Application
    Filed: March 11, 2003
    Publication date: September 16, 2004
    Inventors: Vijayen S. Veerasamy, Scott V. Thomsen, Rudolph Hugo Petrmichl
  • Patent number: 6787198
    Abstract: The present invention involves the hydrothermal treatment of nanostructured films to form high k PMOD™ films for use in applications that are temperature sensitive, such as applications using a polymer based substrate. After a PMOD™ precursor is deposited and converted on a substrate, and possibly after other process steps, the amorphous, nanoporous directly patterned film is subjected to low temperature hydrothermal treatment to densify and possibly crystallize the resulting high dielectric PMOD™ film. A post hydrothermal treatment bake is then performed to remove adsorped water.
    Type: Grant
    Filed: October 23, 2002
    Date of Patent: September 7, 2004
    Assignee: EKC Technology, Inc.
    Inventors: Shyama P. Mukherjee, Harold O. Madsen, Paul J. Roman, Jr., Leo G. Svendsen
  • Patent number: 6783644
    Abstract: A film deposition method, which can form a high quality functional thin film excellent in various physical properties on a surface such as a plastic substrate, is provided. A carbon precursor film is formed on the surface of the substrate K with carbon ions (N2A) using a processing source (4) (a FCVA ion source) with no voltage applied to the substrate K, and then carbon ions (N2B) are implanted in the carbon precursor film with a pulsed voltage containing a negative pulse voltage of −15 kV or less applied to the substrate K, in order to form the carbon thin film. The quality of the carbon precursor film is improved and the various physical properties of the carbon thin film can be controlled.
    Type: Grant
    Filed: December 17, 2002
    Date of Patent: August 31, 2004
    Assignee: Sony Corporation
    Inventors: Minehiro Tonosaki, Koji Kitagawa
  • Publication number: 20040157087
    Abstract: In a manufacturing method of a magneto-optical recording medium formed by laminating a plurality of magnetic layers, there is provided a manufacturing method whereby at least two of the magnetic layers can be properly and individually formed by sputtering the same target means in the same vacuum vessel under different conditions at the time of a sputtering process in accordance with an element composition ratio and/or magnetic characteristics of each layer.
    Type: Application
    Filed: March 29, 2004
    Publication date: August 12, 2004
    Inventors: Tetsuhiro Sakamoto, Kazutomo Miyata
  • Publication number: 20040157058
    Abstract: Durability and/or longevity of a diamond-like carbon (DLC) layer can be improved by varying the voltage and/or ion energy used to ion beam deposit the DLC layer. For example, a relatively low voltage may be used to ion beam deposit a first portion of the DLC layer on the substrate, and thereafter a second higher voltage(s) used to ion beam deposit a second higher density portion of the DLC layer over the first portion of the DLC layer. In such a manner, ion mixing at the bottom of the DLC layer can be reduced, and the longevity and/or durability of the DLC improved.
    Type: Application
    Filed: February 6, 2003
    Publication date: August 12, 2004
    Inventors: Vijayen S. Veerasamy, Scott V. Thomsen
  • Patent number: 6773556
    Abstract: A thin film magnetic recording medium, comprising: at least one ferromagnetic thin film recording layer comprising magnetic particles with substantially uniform barriers to magnetization reversal, formed by a process comprising steps of: (a) providing a precursor structure including at least one ferromagnetic thin film recording layer having a surface and a first, higher coercivity which may be greater than that which permits writing of the precursor structure, comprising magnetic particles having a distribution of energy barriers to magnetization reversal; and (b) uniformly bombarding the entire surface of the precursor structure with particles of sufficient dosage and energy to: (i) substantially equalize the energy barriers to magnetization reversal of the magnetic particles; (ii) lower the coercivity of the at least one ferromagnetic thin film recording layer from the first, higher coercivity to a second, lower coercivity within a range of coercivities permitting writing of the bombarded at least one
    Type: Grant
    Filed: April 25, 2002
    Date of Patent: August 10, 2004
    Assignee: Seagate Technology LLC
    Inventors: Richard Michael Brockie, Hans Jurgen Richter
  • Publication number: 20040151991
    Abstract: Masks can be repaired by creating a structure that is different from the original design, but that produces the same aerial image. For example, missing opaque material can be replaced by implanting gallium atoms to reduce transmission and quartz can be etched to an appropriate depth to produce the proper phase. In another aspect, a laser or other means can be used to remove an area of a mask around a defect, and then mask structures, either the intended design structures or alternate structures that produce the same aerial image, can be constructed using charged particle beam deposition and etching. For example, an electron beam can be used to deposit quartz to alter the phase of transmitted light. An electron beam can also be used with a gas to etch quartz to remove a layer including implanted gallium atoms. Gallium staining can also be reduced or eliminated by providing a sacrificial layer that can be removed, along with the implanted gallium atoms, using, for example, a broad ion beam.
    Type: Application
    Filed: September 17, 2003
    Publication date: August 5, 2004
    Inventors: Diane K. Stewart, J. David Casey, John Beaty, Christian R. Musil, Steven Berger, Joan Williams Casey
  • Patent number: 6767592
    Abstract: A system and method for improving the durability and reliability of recording media used in hard drives is disclosed. A protective overcoat made by depositing a diamond like carbon (DLC) layer over a magnetic layer and then depleting the DLC protective layer of hydrogen before it is coated with a Perfluoropolyethers (PFPE) using an in-situ vapor lubrication technique.
    Type: Grant
    Filed: March 29, 2002
    Date of Patent: July 27, 2004
    Assignee: Seagate Technology LLC
    Inventors: Jing Gui, Xiaoding Ma, Michael Joseph Stirniman
  • Patent number: 6767658
    Abstract: Disclosed is a hard film exhibiting high wear resistance, with composition of (Alb,[Cr1−&agr;V&agr;]c(C1−dNd), satisfying the condition of 0.5≦b≦0.8, 0.2≦c≦0.5, b+c=1, 0.05≦&agr;≦0.95, 0.5≦d≦1 (where b and c each represents atomic ratio of Al and Cr+V, and d denotes atomic ratio of N, &agr; denotes atomic ratio of V.), or with composition of (M&agr;,Alb,[Cr−&agr;V&agr;]c)(C1−dNd), wherein M is at least one element selected from Ti, Nb, W, Ta and Mo and satisfying the condition of 0.02≦a≦0.3, 0.5≦b≦0.8, 0.05≦c, a+b+c=1, 0.5≦d≦1, 0≦&agr;≦1 (where a represents atomic ratio of M). However, the case is exempted where M is Ti and the value of &agr; is 0.
    Type: Grant
    Filed: July 23, 2002
    Date of Patent: July 27, 2004
    Assignee: Kobe Steel, Ltd.
    Inventors: Kenji Yamamoto, Toshiki Sato
  • Patent number: 6767830
    Abstract: A volatile solid-source novel antimony precursor, Br2SbCH3, that may be utilized in semiconductor processing chambers for depositing antimony on a substrate by deposition methods, e.g., chemical vapor deposition, ion implantation, molecular beam epitaxy, diffusion and rapid thermal processing. The novel antimony compound of the invention is synthesized by combining tribromide antimony with trimethylantimony under heating conditions that form a Br2SbCH3 crystalline product.
    Type: Grant
    Filed: August 7, 2002
    Date of Patent: July 27, 2004
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Thomas H. Baum, Michael A. Todd, Niamh McMahon
  • Patent number: 6764714
    Abstract: Methods for coating the interior surface of tubular structures having high aspect ratios and tubular structures produced by such methods. The interior surface of the tubular structure is coated by inducing a magnetic field having a given magnitude around a circumference along a length of the tubular structure, applying a bias at a given voltage to the tubular structure, and exposing the interior surface to a precursor material to deposit the precursor material onto the interior surface of the tubular structure.
    Type: Grant
    Filed: June 11, 2002
    Date of Patent: July 20, 2004
    Assignee: Southwest Research Institute
    Inventors: Ronghua Wei, Christopher Rincon, James Arps
  • Publication number: 20040133283
    Abstract: A method for producing an orthopaedic implant having enhanced fatigue strength. A forged implant substrate having an elongated stem is incorporated with a melting point lowering substance. Then, metal particles are sintered to the substrate, forming a porous layer on the substrate which enhances bone ingrowth or the mechanical interlock with bone cement. Advantageously, the sintering occurs at a lower temperature than if the substance were not incorporated into the substrate, which in turn results in an enhanced fatigue strength of the inventive implant. The fatigue strength of a forged or cast implant can also be improved by nitrogen diffusion hardening and/or thermally processing the implant after the porous coating is adhered by sintering. Further, the fatigue strength can be further improved by combining incorporating the melting point lowering substance with nitrogen diffusion hardening and/or aging treatment subsequent to sintering.
    Type: Application
    Filed: December 17, 2003
    Publication date: July 8, 2004
    Inventor: H. Ravindranath Shetty
  • Publication number: 20040123882
    Abstract: A process for cleaning the silicon surface of a semiconductor device material layer. The surface undergoes a pre-clean process followed by exposure to a nitrogen-containing gas. A polysilicon layer is formed on the surface in the same chamber and at about the same temperature as the cleaning and nitrogen exposing steps.
    Type: Application
    Filed: September 30, 2003
    Publication date: July 1, 2004
    Inventors: Leonard J. Olmer, Robert F. Jones, William D. Bevers, Edward P. Martin
  • Patent number: 6756086
    Abstract: A diamond semiconductor includes a high-quality thin diamond film layer with few crystal defects and few impurities, implanted with ions of dopant elements and controllable in conductivity determined by a kind and a concentration of the dopant elements. The diamond semiconductor is fabricated by a method including the step of implanting ions of dopant elements into a high-quality thin diamond film layer with few crystal defects and few impurities under conditions that can attain given distribution of concentrations of the dopant elements and with the high-quality thin diamond film layer kept to a temperature in accordance with the conditions so as not to be graphitized, to thereby enable the diamond semiconductor to have conductivity determined by a kind and a concentration of the dopant elements.
    Type: Grant
    Filed: March 6, 2002
    Date of Patent: June 29, 2004
    Assignees: Agency of Industrial Science and Technology, Ministry of International Trade and Industry, Japan Science and Technology Corporation
    Inventors: Masataka Hasegawa, Masahiko Ogura, Daisuke Takeuchi, Hideyo Okushi, Naoto Kobayashi, Sadanori Yamanaka
  • Patent number: 6753042
    Abstract: Wear-resistant and low-friction hard amorphous, diamond-like carbon coating (DLC) is formed directly on an eternal surface of a magnetic recording media sensor (MRMS). The coating demonstrates a high degree of hardness, low friction coefficient and moderate electric resistivity, providing abrasion-proof, low-clogging, static electricity-deterrent properties.
    Type: Grant
    Filed: May 2, 2000
    Date of Patent: June 22, 2004
    Assignee: ITAC Limited
    Inventors: Oleg Markovich Bakounine, Serguei Aleksandrovich Plotnikov, Ilia Shmulevich Trakhtenberg, Kensuke Uemura
  • Patent number: 6740208
    Abstract: In a method of manufacturing a photo mask blank by forming an opaque film or a semi-transmission film on a transparent substrate, the film is subjected to irradiation of an ion generated by an ion source. A warp of the substrate by a film stress can be reduced (the film stress is relaxed), and density and denseness of the film can be enhanced. The film may be deposited on the transparent substrate by a sputtering method.
    Type: Grant
    Filed: November 30, 2001
    Date of Patent: May 25, 2004
    Assignee: Hoya Corporation
    Inventors: Mitsuhiro Kureishi, Osamu Nozawa
  • Patent number: 6737643
    Abstract: A detector apparatus and its use for cluster ion beam diagnostics are described. The detector has a Faraday cup with a conductance path to a gas pressure detector and a conductance to the detector exit. The detector acquires ion current, which is a measure of the ion beam flux, and also acquires mass flux, through a pressure measurement. The pressure measurement responds to the mass of dissociated gas clusters and is combined with information about instantaneous ion current to estimate mean gas cluster ion size ({overscore (N)}i).
    Type: Grant
    Filed: March 19, 2001
    Date of Patent: May 18, 2004
    Assignee: Epion Corporation
    Inventors: Richard P. Torti, Matthew C. Gwinn, Jerald P. Dykstra
  • Publication number: 20040067368
    Abstract: A substrate is coated with a layer(s) or coating(s) that includes, for example, amorphous carbon in a form of diamond-like carbon (DLC). In certain embodiments, the DLC inclusive layer may be doped with at least one polar inducing dopant (e.g., Boron, Nitrogen, and/or any other suitable polar inducing dopant) in order to make the layer more polar and thus more hydrophilic so as to have a lower contact angle &thgr;. In other embodiments, where such doping is optional, the DLC may be exposed to ultraviolet (UV) radiation in a manner sufficient to cause the contact angle &thgr; of the DLC layer to drop into a hydrophilic range (e.g., less than or equal to about 20 degrees).
    Type: Application
    Filed: October 2, 2003
    Publication date: April 8, 2004
    Applicant: Guardian Industries Corp.
    Inventor: Vijayen S. Veerasamy
  • Patent number: 6689256
    Abstract: A frequency selective plate which is produced by coating an Ag layer dispersed with Ag particles on a transparent substrate. The Ag layer is formed by depositing an Ag continuous layer on the substrate and heating the Ag continuous layer to varying into Ag particles or by depositing an Ag continuous layer on the heated substrate. The frequency selective plate performs high transparency of radio waves and visible rays while sufficiently reflecting near-infrared rays of solar radiation.
    Type: Grant
    Filed: March 13, 2002
    Date of Patent: February 10, 2004
    Assignee: Central Glass Company, Limited
    Inventors: Hiroshi Nakashima, Masaaki Yonekura, Hideaki Wakabayashi, Masanobu Kominami
  • Publication number: 20040018700
    Abstract: Methods and apparatus for focusing proton and ion beams within the profile of the beam envelope of an ultra-low emittance, charge neutralized emission to create a pattern without focusing the entire beam envelope or rastering. In one implementation, a method for use with laser accelerated ion beams comprises the steps: irradiating a surface of a target with pulsed laser irradiation to produce an electron plasma emission on a non-irradiated surface of the target, the electron plasma emission producing an ion beam emission on the non-irradiated surface, the ion beam emission having a beam envelope; and focusing ions of the ion beam emission into a plurality of component beams within the beam envelope as a result of the shape of the non-irradiated surface of the target.
    Type: Application
    Filed: February 5, 2003
    Publication date: January 29, 2004
    Applicant: General Atomics
    Inventors: Thomas E. Cowan, Markus Roth, Patrick Audebert
  • Patent number: 6660340
    Abstract: A method and apparatus for enhancing the adhesion of a diamond-like carbon (DLC) film to a substrate and for producing a strongly adhered DLC film on a substrate. The adhesion is enhanced by ion beam pre-processing of the substrate prior to DLC film formation.
    Type: Grant
    Filed: November 21, 2000
    Date of Patent: December 9, 2003
    Assignee: Epion Corporation
    Inventor: Sean R. Kirkpatrick
  • Publication number: 20030216014
    Abstract: Monotomic boron ions for ion implantation are supplied from decaborane vapour. The vapour is fed to a plasma chamber and a plasma produced in the chamber with sufficient energy density to disassociate the decaborane molecules to produce monatomic boron ions in the plasma.
    Type: Application
    Filed: March 24, 2003
    Publication date: November 20, 2003
    Applicant: APPLIED MATERIALS, INC.
    Inventor: Richard David Goldberg
  • Publication number: 20030209430
    Abstract: An ion beam irradiation apparatus is equipped with a plasma generator which generates a plasma and supplies it to a region in the vicinity of the upstream side of a substrate, thereby suppressing a charging up of a surface of the substrate, which results from an irradiation of the ion beam. The radio frequency electric source for supplying the plasma for generating the plasma to a plasma generator is a radio frequency electric source for producing a radio frequency electric power formed by amplitude modulating an original radio frequency signal.
    Type: Application
    Filed: December 3, 2002
    Publication date: November 13, 2003
    Inventor: Nariaki Hamamoto
  • Publication number: 20030198752
    Abstract: A film deposition method, which can form a high quality functional thin film excellent in various physical properties on a surface such as a plastic substrate, is provided. A carbon precursor film is formed on the surface of the substrate K with carbon ions (N2A) using a processing source (4) (a FCVA ion source) with no voltage applied to the substrate K, and then carbon ions (N2B) are implanted in the carbon precursor film with a pulsed voltage containing a negative pulse voltage of −15 kV or less applied to the substrate K, in order to form the carbon thin film. The quality of the carbon precursor film is improved and the various physical properties of the carbon thin film can be controlled.
    Type: Application
    Filed: December 17, 2002
    Publication date: October 23, 2003
    Inventors: Minehiro Tonosaki, Koji Kitagawa
  • Publication number: 20030194509
    Abstract: A method is provided for forming a thin film layer of a substrate. The method includes the steps of forming a thin surface layer containing a dopant material on the substrate, and short-time thermal processing of the doped surface layer with processing parameters selected to produce a reaction between the surface layer and the dopant material to form a dielectric film, a metal film or a silicide film. In one embodiment, short-time thermal processing is implemented by flash rapid thermal processing of the doped surface layer. In another embodiment, short-time thermal processing is implemented by sub-melt laser processing of the doped surface layer. The process may be used for forming dielectric layers having a thickness of 50 angstroms or less.
    Type: Application
    Filed: April 15, 2002
    Publication date: October 16, 2003
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventor: Daniel F. Downey
  • Patent number: 6632482
    Abstract: Implantation process for cold cathode plasma immersion ion implantation (C2PI3) without a continuous plasma using very short high voltage, low duty cycle ionization pulses, in conjunction with a synchronously produced electron flow to neutralize positively charged wafer surfaces.
    Type: Grant
    Filed: August 19, 1996
    Date of Patent: October 14, 2003
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventor: Terry Tienyu Sheng
  • Patent number: 6627320
    Abstract: A method for producing a composition for vapor deposition comprising sintering a vapor source mixture prepared by mixing vapor sources that contain titanium dioxide and niobium pentoxide. The method is capable of forming a high-refraction layer even in low-temperature vapor deposition on a substrate. An antireflection film is formed having good scratch resistance, good chemical resistance and good heat resistance, of which the heat resistance decreases little with time, that is useful in a variety of optical elements.
    Type: Grant
    Filed: November 29, 2001
    Date of Patent: September 30, 2003
    Assignee: Hoya Corporation
    Inventors: Takeshi Mitsuishi, Hitoshi Kamura, Kenichi Shinde, Hiroki Takei, Akinori Kobayashi, Yukihiro Takahashi, Yuko Watanabe
  • Publication number: 20030175444
    Abstract: The present invention discloses at least one to omnidirectionally modify surfaces of organic or inorganic materials by means of plasma immersion ion implantation process to produce TiO2-x films of the materials surfaces (x is about 0˜0.35). The method includes using oxygen which exists as plasma in the PIII vacuum chamber as the environment, creating and introducing titanium and other metallic plasmas which deposit on the materials surfaces, into the vacuum chamber by means of metal arc source, and apply a negative pulse potential of 500˜50,00 Hz and 0.1˜10 kV amplitude on the workpiece. And also the method to by means of implanting H, Ta or Nb into the TiO2-x films to produce TiO2-x films containing H, Ta or Nb. The materials with surface films fabricated by the present invention, when implanted into human body and contacting blood, have obvious improved blood compatibilities.
    Type: Application
    Filed: October 21, 2002
    Publication date: September 18, 2003
    Inventors: Nan Huang, Ping Yang, Yongxiang Leng, Junying Chen, Hong Sun, Jin Wang, Guojiang Wan
  • Patent number: 6605321
    Abstract: The invention provides a method of treating a material to cause the material to evolve from one phase to a more ordered phase, the method comprising an operation of irradiating the material in which the irradiating particles are suitable, by their nature and by their energy, for inducing displacements of the atoms in the material towards positions that favor ordering of the material. Advantageously, the invention also provides apparatus for magnetically recording information, the apparatus comprising a material deposited on a substrate at a temperature of less than 350° C. and that has been subjected to irradiation with irradiating particles that are suitable, by their nature and their energy, for inducing displacements of the atoms in the material towards positions that favor relaxation of the material.
    Type: Grant
    Filed: July 20, 2000
    Date of Patent: August 12, 2003
    Assignee: Centre National de la Recherche Scientifique (CNRS)
    Inventors: Dafiné Ravelosona-Ramasitera, Claude Chappert, Véronique Mathet, Harry Bernas
  • Publication number: 20030127049
    Abstract: A substrate processing chamber component is a structure having an integral surface coating comprising an yttrium-aluminum compound. The component may be fabricated by forming a metal alloy comprising yttrium and aluminum into the component shape and anodizing its surface to form an integral anodized surface coating. The chamber component may be also formed by ion implanting material in a preformed metal shape. The component may be one or more of a chamber wall, substrate support, substrate transport, gas supply, gas energizer and gas exhaust.
    Type: Application
    Filed: January 8, 2002
    Publication date: July 10, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Nianci Han, Li Xu, Hong Shih
  • Patent number: 6579420
    Abstract: A thin film deposition apparatus and method are disclosed in this invention. The apparatus includes a depositing thin-film particle source, a beam-defining aperture between the particle source and the deposited substrate(s), and a substrate holder to rotate the substrate(s) around its center and move the center along a lateral path so that the substrate(s) can scan across the particle beam from one substrate edge to the other edge. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface of each substrate facing the beam of thin-film particles.
    Type: Grant
    Filed: February 9, 2001
    Date of Patent: June 17, 2003
    Assignee: Advanced Optical Solutions, Inc.
    Inventors: Zhimin Wan, Jiong Chen, Peiching Ling, Jianmin Qiao
  • Patent number: 6575552
    Abstract: A surface processing method for processing the surface of an insulating article in which an ion-implanted surface-modified layer is effectively formed on the article 2. In surface processing the article 2 of an insulating material, an electrically conductive thin metal film 50 is first formed on the article surface. A pulsed voltage containing a positive pulsed voltage and a negative pulsed voltage is applied to the article in a plasma containing ions to be implanted to implant ions in the article surface. This implants ions at right angles to the article surface to generate a surface-modified layer 51. There is no possibility of the article 2 being charged up due to application of a pulsed voltage.
    Type: Grant
    Filed: July 17, 2002
    Date of Patent: June 10, 2003
    Assignee: Sony Corporation
    Inventors: Seiichi Watanabe, Kenji Shinozaki, Minoru Kohno, Hiroyuki Mitsuhashi, Minehiro Tonosaki, Masato Kobayashi
  • Patent number: 6572933
    Abstract: Process for forming adherent coatings using plasma processing. Plasma Immersion Ion Processing (PIIP) is a process where energetic (hundreds of eV to many tens of keV) metallic and metalloid ions derived from high-vapor-pressure organometallic compounds in a plasma environment are employed to deposit coatings on suitable substrates, which coatings are subsequently relieved of stress using inert ion bombardment, also in a plasma environment, producing thereby strongly adherent coatings having chosen composition, thickness and density. Four processes are utilized: sputter-cleaning, ion implantation, material deposition, and coating stress relief. Targets are placed directly in a plasma and pulse biased to generate a non-line-of-sight deposition without the need for complex fixturing. If the bias is a relatively high negative potential (20 kV-100 kV) ion implantation will result.
    Type: Grant
    Filed: September 24, 1998
    Date of Patent: June 3, 2003
    Assignee: The Regents of the University of California
    Inventors: Michael A. Nastasi, Kevin C. Walter, Donald J. Rej
  • Patent number: 6565929
    Abstract: The method of manufacturing the magnetic medium for data storage comprising magnetic segments (5) for data storage which alternate regularly with nonmagnetic segments, which method comprises deposition on a substrate (1) from a nonmagnetic material a material having low or zero initial magnetization and capable of varying its magnetic characteristics under the effect of irradiation. The mentioned material is laid on the substrate (1) as a layer (2) in a thickness corresponding to one of the overall size values of any one of the magnetic segment (5) being formed. Then the applied layer (2) is selectively irradiated so as to vary the magnetic characteristics of the material of the layer (2) on the irradiated segments before forming the magnetic segments (5) each having a maximum overall size the ratio between which and any other overall size of this magnetic segment is from 3.5:1 to 15:1.
    Type: Grant
    Filed: October 10, 2001
    Date of Patent: May 20, 2003
    Assignee: Obschestvo s organichennoi otvetstvennostju “Laboratoria Ionnykh Nanotekhnology” (OOO “Labintech”)
    Inventors: Boris Aronovich Gurovich, Dmitry Losifovich Dolgy, Evgeny Zalmanovich Meylikhov, Evgeny Pavlovich Velikhov, Vladimir Borisovich Betelin, Evgenia Anatolievna Kuleshova, Evgeny Dmitrievich Olshansky, Boris Aronovich Aronzon, Alexandr Viktorovich Kalinin
  • Patent number: 6565719
    Abstract: A method for making a magnetic disk comprises forming first and second protective carbon layers on a magnetic layer. The first protective carbon layer is predominantly SP3 carbon. The second protective carbon layer comprises about 50% or less SP3 carbon. The second protective carbon layer is very thin, e.g. between 0.1 and 1.0 nm thick. A lubricant layer (e.g. a perfluoropolyether lubricant) is applied to the second protective carbon layer. The second protective carbon layer facilitates improved cooperation between lubricant and the disk.
    Type: Grant
    Filed: June 27, 2000
    Date of Patent: May 20, 2003
    Assignee: Komag, Inc.
    Inventors: Bruce Lairson, Ching Jackie Tsoi, Wen Liu, Shigeto Hashimoto, Eric Woo Hock Yong, Tsutomu Tom Yamashita
  • Publication number: 20030059634
    Abstract: A personal ornament having a white coating layer comprises a base article made of a metal, and a white-colored stainless steel coating layer formed by a dry plating process on at least a part of the surface of the base article. Another personal ornament having a white coating layer comprises a base article made of a nonferrous metal, an underlying plating layer formed on the surface of the base article, and a white-colored stainless steel coating layer formed by a dry plating process on at least a part of the surface of the underlying plating layer.
    Type: Application
    Filed: February 26, 2002
    Publication date: March 27, 2003
    Inventors: Koichi Naoi, Akiyoshi Takagi, Yukio Miya, Fumio Tase, Kazumi Hamano
  • Patent number: 6527918
    Abstract: A pulsed plasma doping system separates the plasma ignition function from the ion implantation function. An ignition voltage pulse is supplied to an ionizable gas and an implantation voltage pulse is applied to the target. The implantation voltage pulse can be generated from the ignition voltage pulse or can be generated separately from the ignition voltage pulse. Ions may be implanted in the target at an energy level that is below the Paschen curve for the system.
    Type: Grant
    Filed: September 21, 2001
    Date of Patent: March 4, 2003
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Matthew J. Goeckner, Ziwei Fang