Abstract: The present invention provides a shearing die having longer life and a method for manufacturing the same.

Abstract: The invention relates to a cathode (A) for lithium ion accumulators, comprising (a1) at least one current collector, (a2) at least one layer comprising at least one cathode-active material which stores/releases lithium ions, at least part of layer (a2) having been compacted and/or the side of layer (a2) facing the anode having at least one layer (a3) which comprises at least one solid electrolyte which conducts lithium ions, said solid electrolyte being selected from the group consisting of inorganic solid electrolytes and mixtures thereof and being insoluble in the electrolyte system (B) used in the lithium ion accumulator, to lithium ion accumulators comprising the cathode (A) and to a process for producing the cathode (A).

Abstract: Techniques for plasma processing a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a method comprising introducing a feed gas proximate to a plasma source, where the feed gas may comprise a first and second species, where the first and second species have different ionization energies; providing a multi-level RF power waveform to the plasma source, where the multi-level RF power waveform has at least a first power level during a first pulse duration and a second power level during a second pulse duration, where the second power level may be different from the first power level; ionizing the first species of the feed gas during the first pulse duration; ionizing the second species during the second pulse duration; and providing a bias to the substrate during the first pulse duration.

Abstract: A method and apparatus is provided for improving implant uniformity of an ion beam experiencing pressure increase along the beam line. The method comprises generating a main scan waveform that moves an ion beam at a substantially constant velocity across a workpiece. A compensation waveform (e.g., quadratic waveform), having a fixed height and waveform, is also generated and mixed with the main scan waveform (e.g., through a variable mixer) to form a beam scanning waveform. The mixture ratio may be adjusted by an instantaneous vacuum pressure signal, which can be performed at much higher speed and ease than continuously modifying scan waveform. The mixture provides a beam scanning waveform comprising a non-constant slope that changes an ion beam's velocity as it moves across a workpiece. Therefore, the resultant beam scanning waveform, with a non-constant slope, is able to account for pressure non-uniformities in dose along the fast scan direction.

Abstract: An ion implantation system and associated method includes a scanner configured to scan a pencil shaped ion beam into a ribbon shaped ion beam, and a beam bending element configured to receive the ribbon shaped ion beam having a first direction, and bend the ribbon shaped ion beam to travel in a second direction. The system further includes an end station positioned downstream of the beam bending element, wherein the end station is configured to receive the ribbon shaped ion beam traveling in the second direction, and secure a workpiece for implantation thereof. In addition, the system includes a beam current measurement system located at an exit opening of the beam bending element that is configured to measure a beam current of the ribbon shaped ion beam at the exit opening of the beam bending element.

Abstract: A system or method of charge particle beam induced materials processing is disclosed. A charged particle beam (electron or ion) is focused at the interface of a substrate and a bulk liquid. The beam induces a localized chemical reaction that results in deposition or etching of deterministic micro- or nano-scale structures. The bulk liquid reactants permit the deposition and etching of metals, semiconductors, and insulators. A charged particle transparent membrane separates the liquid reactant from the vacuum chamber in which the beam is transmitted. In many cases, bulk liquid reactants permit processing of materials with much higher purity that of the prior art and permit processing of materials previously unavailable in charged particle beam processes.

Abstract: A gain medium operable to amplify light at a gain wavelength and having reduced transverse ASE includes an input surface and an output surface opposing the input surface. The gain medium also includes a central region including gain material and extending between the input surface and the output surface along a longitudinal optical axis of the gain medium. The gain medium further includes an edge cladding region surrounding the central region and extending between the input surface and the output surface along the longitudinal optical axis of the gain medium. The edge cladding region includes the gain material and a dopant operable to absorb light at the gain wavelength.

Abstract: The invention relates to a process of preparing functional layers, like protection, encapsulation and alignment layers, on an electronic device by a low energy particle beam deposition process, to functional layers obtainable by said process, and to electronic devices comprising such functional layers.

Abstract: Erasable ion implanted optical couplers are described. In one example a method includes implanting ions into a substrate to form a grating in a waveguide of an optical device coupling optical signals into and out of the waveguide and through the grating, and annealing the substrate to remove the grating after coupling optical signals through the waveguide.

Abstract: A process for preparing mist, which includes micro/nano solids or liquids, and a process for forming new materials by mist gas discharge, and also an apparatus for forming new materials. The advantages are: as compared to common gases, mists exhibit broader selection range of elements and compounds and broader range of suitable temperature and pressure. Due to the presence of mist AI(m), in a sealed container, the concentration of A in unit volume of mist is far higher than the concentration of A in unit volume of gas. Under specific conditions, the physical/chemical reactions can be carried out more easily, and new materials can be formed with higher efficiency.

Abstract: A soft-landing (SL) instrument for depositing ions onto substrates using a laser ablation source is described herein. The instrument of the instant invention is designed with a custom drift tube and a split-ring ion optic for the isolation of selected ions. The drift tube allows for the separation and thermalization of ions formed after laser ablation through collisions with an inert bath gas that allow the ions to be landed at energies below 1 eV onto substrates. The split-ring ion optic is capable of directing ions toward the detector or a landing substrate for selected components. The inventors further performed atomic force microscopy (AFM) and drift tube measurements to characterize the performance characteristics of the instrument.

Abstract: Substrates are provided for use in the detection, identification and analysis of biologic or chemical samples that are labeled with a fluorescent label, in which the plane of maximum fluorescence is displaced from a reflective substrate surface so that the intensity maximum of the standing wave interference pattern of incident and reflected probe radiation is enhanced. The format of the substrates includes substantially planar surfaces as well as substrates with introduced variations to the substrate surface, e.g., depressions, wells, pedestals and the like, disposed in arrays or other similar structures such that one or more fluorophore-comprising objects can be attached thereto.

Abstract: Alkali metal ion-doped electrochromic films, and methods of making such films, are disclosed. An exemplary electrochromic film comprises a lattice of an oxide of a Group VIII transition metal and a dopant deposited onto the surface of a substrate. The oxide is generated by heating at least one starting material and at least one dopant ion source on the surface of the substrate.

Abstract: A plasma processing method is provided. The plasma processing method includes using the after-glow of a pulsed power plasma to perform conformal processing. During the afterglow, the equipotential field lines follow the contour of the workpiece surface, allowing ions to be introduced in a variety of incident angles, especially to non-planar surfaces. In another aspect of the disclosure, the platen may be biased positively during the plasma afterglow to attract negative ions toward the workpiece. Various conformal processing steps, such as implantation, etching and deposition may be performed.

Abstract: The present invention relates to an inductively coupled plasma processing chamber and method for a cylindrical workpiece with a three-dimensional profile, and more particularly to an inductively coupled plasma processing reactor and method for a cylindrical workpiece with a three-dimensional profile, in which the workpiece serving as an internal RF antenna is connected to an RF power source through an impedance matching network at one end, and a terminating capacitor at another end so as to achieve low plasma contamination, confine dense uniform plasma in the substrate vicinity and suppress secondary electrons emitted from the substrate, and a plasma process can be applied to a 3-D linear semiconductor device, a metal, glass, ceramic or polymer substrate having planar or 3-D structured micro or nano patterns, and the like.

Abstract: The present disclosure relates to a method for plasma ion deposition and coating formation. A vacuum chamber may be supplied, wherein the vacuum chamber is formed by a hollow substrate having a length, diameter and interior surface. A plasma may be formed within the chamber while applying a negative bias to the hollow substrate to draw ions from the plasma to the interior surface of the hollow substrate to deposit ions onto the interior surface and forming a coating. The coating may have a Vickers Hardness Number (Hv) of at least 500.

Abstract: A process for powering an electrical load includes applying a rectified alternating current waveform across the load for a first time period with only a single power supply for at least two half cycles. At least one half cycle of an alternating current waveform of opposite polarity are then applied relative to the rectified alternating current waveform across the load for a second time period. Rectified alternating current waveform is then again applied across the load for at least two half cycles for a third time period to power the electrical load. The rectified alternating current waveform can be applied a direct current offset. A power supply is provided for provided power across the load according to this process.

Abstract: Transparent structures, electrochromic devices, and methods for making such structures/devices are provided. A transparent structure may include a transparent substrate having a plurality of micro- or nano-scale structures, at least one substance configured to block near-infrared or infrared radiation and partially cover at least substantial portions of the substrate and the plurality of micro- or nano-scale structures, and at least one photocatalyst configured to at least partially cover an outermost surface of the transparent structure.

Abstract: A method includes forming ionic clusters of carbon-containing molecules, which molecules have carbon-carbon sp2 bonds, and accelerating the clusters. A surface of a substrate is irradiated with the clusters. A material is formed on the surface using the carbon from the molecules. The material includes carbon and may optionally include hydrogen. The material may include graphene. The material may form a monolayer. The molecules may include one or more material selected from the group consisting of graphene, carbon allotropes, ethylene, and hydrocarbon molecules containing ethylenic moieties. A fused region may be formed in the substrate as an interface between the substrate and the material. The clusters may have diameters of at least 20 nanometers and may be accelerated to an energy of at least 0.5 keV.

Abstract: A magnetic film having excellent uniformity in in-plane distribution of film thickness or sheet resistance is formed when the film is formed by forming a magnetic field on a processing surface of a substrate (21) and performing oblique incidence sputtering by using high discharge power. A sputtering apparatus (1) is provided with a substrate holder (22) for holding rotatably the substrate (21) in the surface direction of the processing surface of the substrate; a substrate magnetic field forming device (30) which is disposed to surround the substrate (21) and forms a magnetic field on the processing surface of the substrate (21); cathodes (41) which are arranged diagonally above the substrate (21) and are supplied with electric discharge power; a position detecting device (23) for detecting a rotation position of the substrate (21) ; and a control device (50) which adjusts the rotation speed of the substrate (21) in accordance with the rotation position detected by the position detecting device (23).

Abstract: A piezoelectric film is formed on a surface of a substrate by a vapor deposition process without generating grain boundaries which are substantially parallel to the surface of the substrate and are caused by lamination. A normal of a (100) plane of each of crystals constituting the piezoelectric film is inclined from a normal of the surface of the substrate by an angle of not smaller than 6° and not larger than 36°.

Abstract: The invention relates an ion source for ion beam deposition comprising multiple anodes, wherein the ion source deposits multiple zones of a source material and thicknesses of at least two of the multiple zones are different.

Abstract: A magnetic data storage medium may include a substrate, a magnetic recording layer, a protective carbon overcoat, and a monolayer covalently bound to carbon atoms adjacent a surface of the protective carbon overcoat. According to this aspect of the disclosure, the monolayer comprises at least one of hydrogen, fluorine, nitrogen, oxygen, and a fluoro-organic molecule. In some embodiments, a surface of a read and recording head may also include a monolayer covalently bound to carbon atoms of a protective carbon overcoat.

Abstract: The invention relates to a controlled graphene film growth process characterized in that it comprises the following steps: the production on the surface of a substrate (S1) of a layer of a metal having with carbon a phase diagram such that above a molar concentration threshold ratio CM/CM+CC, where CM is the molar metal concentration in a metal/carbon mixture and CC is the molar carbon concentration in said mixture, a homogeneous solid solution is obtained; the exposure of the metal layer to a controlled flux of carbon atoms or carbon-containing radicals or carbon-containing ions at a temperature such that the molar concentration ratio obtained is greater than the threshold ratio so as to obtain a solid solution of carbon in the metal; and an operation for modifying the phase of the mixture into two phases, a metal phase and a graphite phase respectively, leading to the formation of at least a lower graphene film (31) located at the (metal layer incorporating carbon atoms)/substrate interface and an upper

Abstract: A black matrix formed on a substrate includes four layers formed by stacking a first film, a second film, a third film, and a fourth film in this order, each film being made of a transition metal oxide and a silicon oxide. A relationship of refractive index of the first film=refractive index of the third film<refractive index of the second film=refractive index of the fourth film is set, the fourth film is a multilayer film, with each layer being identical in composition to each other, and a boundary is recognized within the fourth film when seen on a TEM picture.

Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.

Abstract: The present invention relates to a method of forming a graphene layer, and, more particularly, to a method of forming a graphene layer which is a two-dimensional thin film composed of carbon atoms arranged in a honeycomb-style lattice and having one atom thick and which is put to practical use in the field of electric devices, transparent electrodes or microwave circuits. The method includes the steps of: (a) forming a metal thin film on a substrate; (b) injecting carbon ions into the metal thin film; and (c) heat-treating the carbon ions injected into the metal thin film to form a graphene layer on the metal thin film. The method is advantageous in that a graphene layer is formed by uniformly injecting an accurate amount of carbon ions into a metal thin film depending on the maximum solubility of carbon in the metal thin film and then heat-treating the injected carbon ions, thus uniformly forming the graphene layer on the metal thin film.

Abstract: A method of making a coated article (e.g., window unit), and corresponding coated article are provided. A layer of or including diamond-like carbon (DLC) is formed on a glass substrate. Then, a protective layer is formed on the substrate over the DLC inclusive layer. During heat treatment (HT), the protective layer prevents the DLC inclusive layer from significantly burning off. Thereafter, the resulting coated glass substrate may be used as desired, it having been HT and including the protective DLC inclusive layer.

Abstract: The invention provides methods for the application of active materials onto active surfaces useful in organic electronic devices. The methods of the invention include selecting a liquid composition including an active material and a suitable liquid medium whereby when the liquid composition is deposited on the desired active surface it has no greater than about a 40° contact angle; treating the active surface to raise its surface tension before the deposition of a liquid composition containing the desired active material is deposited thereon; and combination thereof. The invention also provides organic electronic devices having at least two active layers, wherein at least one active layer comprises an active material that was deposited using at least one practice of the method of the invention.

Abstract: A method for forming a diamond-like carbon (DLC) layer on air bearing surface (ABS) of a slider, comprises steps of: providing sliders arranged in arrays, each slider having an ABS; forming a mixing layer in the ABS of the slider by depositing a first DLC layer on the ABS, the mixing layer consisting of the slider material and the first DLC layer material; removing the first DLC layer to make the mixing layer exposed; forming a second DLC layer on the mixing layer.

Abstract: An ion implanter for creating a ribbon or ribbon-like beam by having a scanning device that produces a side to side scanning of ions emitting by a source to provide a thin beam of ions moving into an implantation chamber. A workpiece support positions a workpiece within the implantation chamber and a drive moves the workpiece support up and down through the thin ribbon beam of ions perpendicular to the plane of the ribbon to achieve controlled beam processing of the workpiece. A control includes a first control output coupled to said scanning device to limit an extent of side to side scanning of the ion beam to less than a maximum amount and thereby limit ion processing of the workpiece to a specified region of the workpiece and a second control output coupled to the drive simultaneously limits an extent of up and down movement of the workpiece to less than a maximum amount and to cause the ion beam to impact a controlled portion of the workpiece.

Abstract: Since the surface roughness of a recording layer get larger in the process of fabricating a patterned medium, the spacing between a head and the medium is widened. As a result, the recording performance and corrosion resistance of the medium are degraded. In the patterned medium, a recording layer includes one layer of a crystalline magnetic film or plural layers of crystalline magnetic films, and a magnetic film of an amorphous structure located on the outermost surface of the crystalline magnetic films. The compositional elements of the magnetic film of the amorphous structure are identical to those of the crystalline magnetic film located immediately under the magnetic film. In a fabrication method thereof, the surface of the crystalline magnetic film is turned into amorphous in order to form the magnetic film of the amorphous structure.

Abstract: An optical thin-film vapor deposition apparatus and method are capable of producing an optical thin-film by vapor depositing a vapor deposition substance onto substrates (14) within a vacuum vessel (10). A dome shaped holder (12) is disposed within the vacuum vessel (10) and holds the substrates (14). A drive rotates the dome shaped holder (12). A vapor depositing source (34) is disposed oppositely to the substrates (14). An ion source (38) irradiates ions to the substrates (14). A neutralizer (40) irradiates electrons to the substrates (14). The ion source (38) is disposed at an angle between an axis, along which ions are irradiated from the ion source (38), and a line perpendicular to a surface of each of the substrates (14). The angle is between 8° inclusive and 40° inclusive. A ratio of a distance in a vertical direction between (i) a center of rotational axis of the dome shaped holder (12), and (ii) a center of the ion source (38), relative to a diameter of the dome shaped holder (12), is between 0.

Abstract: An improved ion conductor layer for use in electrochromic devices and other applications is disclosed. The improved ion-conductor layer is comprised of at least two ion transport layers and a buffer layer, wherein the at least two ion transport layers and the buffer layer alternate within the ion conductor layer such that the ion transport layers are in communication with a first and a second electrode. Electrochromic devices utilizing such an improved ion conductor layer color more deeply by virtue of the increased voltage developed across the ion conductor layer prior to electronic breakdown while reducing the amount of electronic leakage. Also disclosed are methods of making electrochromic devices incorporating the improved ion conductor layer disclosed herein and methods of making ion conductors for use in other applications.

Abstract: Disclosed are supercapacitor materials comprising compositions having pores that are optimally sized to maximize capacitance. Also disclosed are related methods for fabricating such supercapacitors.

Abstract: The present invention is a film for prevention of electromagnetic interference and transmission of wireless signals. A conductive lamination is integrally attached to a preset position of a substrate and shaped as a film and a signal transceiver. The method of forming the film includes selecting a substrate and selecting a signal transmitting and receiving mode and a form of the conductive surface according to a specific need. A film-shaped signal transceiver and conductive lamination are integrally formed on a preset area of the substrate. By plating and/or coating, the present invention can form a conductive lamination on the substrate with both functions as a signal transceiver and a shield.

Abstract: Methods of applying a nanocrystalline diamond film to a cutting tool are provided. In the methods, the cutting tool comprises tungsten carbide and has a cutting edge with a radius of curvature of no more than about 1 ?m. The methods can comprise seeding a cutting surface of the cutting tool with a diamond nanopowder, the cutting surface having a reduced cobalt content, and depositing a nanocrystalline diamond film having a thickness of no more than about 1 ?m onto the seeded cutting surface. The methods can also comprise implanting carbon ions into a cutting surface of the cutting tool to provide a carbide rich cutting surface and depositing a nanocrystalline diamond film having a thickness of no more than about 1 ?m onto the carbide-rich cutting surface.

Abstract: Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

Abstract: A system and method for depositing coatings on an inner surface of a tubular structure includes at least one pump for creating and maintaining a vacuum in the tubular structure, a meshed electrode adapted to be positioned in a center of the tubular structure, and a biased voltage power supply connected to the meshed electrode. The biased voltage power supply is adapted to apply a negative voltage to the meshed electrode such that the negative voltage causes a hollow cathode discharge inside the meshed electrode. The creation of the hollow cathode discharge causes ions to be drawn out of a mesh on the meshed electrode and accelerate onto an inner surface of the tubular structure, thereby coating the inner surface with a desired coating.

Abstract: A method for producing layer systems on substrates includes irradiating a first vacuum coating source with an irradiating source. The first vacuum coating source includes a first layer material that is dissolved in a solvent. A second vacuum coating source is applied to the substrate via a chemical vapor deposition process. In this way, novel layer systems and mixed layers, in particular mixed layers of polymers and metals or metal oxides can be applied.

Abstract: Diamond-like carbon (DLC) coated nanoprobes and methods for fabricating such nanoprobes are provided. The nanoprobes provide hard, wear-resistant, low friction probes for use in such applications as atomic force microscopy, nanomachining, nanotribology, metrology and nanolithography. The diamond-like carbon coatings include a carbon implantation layer which increases adhesion of a deposited DLC layer to an underlying nanoprobe tip.

Abstract: Embodiments of a method and system for improving the consistency of a layer or a plurality of layers with a desired profile in a deposition system are generally described herein. Other embodiments may be described and claimed.

Abstract: A method for establishing a calibrating standard for wafer inspection includes depositing solid ionized particles of a known size range with an aerosol onto a wafer. The method also includes depositing particles onto a wafer in a deposition chamber by using an aerosol stream and the solid particles suspended in a gas; ionizing the aerosol stream with a negative or positive charge polarity or both by passing the aerosol stream through a non-radioactive ionizer to produce charged particles and supplying such aerosol stream to the deposition chamber.

Abstract: [Object] To provide a deposition apparatus 1 capable of suppressing a temporal change in film formation conditions. [Solution] In the deposition apparatus 1 including a substrate holder 12 supported in a vacuum chamber 10 grounded on the earth, a substrate 14 held by the substrate holder 12, deposition sources 34, 36 placed distant from the substrate 14 so as to face the substrate, an ion gun 38 for irradiating ions to the substrate 14, and a neutralizer 40 for irradiating electrons to the substrate 14, the vacuum chamber 10 is provided with an inner wall 30 electrically floating, and the neutralizer 40 is arranged on the inner side surface side of the vacuum chamber 10 so as to be distant from the ion gun 38.

Abstract: According to one embodiment, a magnetic recording medium includes two or more magnetic recording layers stacked on a nonmagnetic substrate, and a carbon-based protective layer formed on the two or more magnetic recording layers, in which an uppermost one of the two or more magnetic recording layers has hardness higher than that of a lower magnetic recording layer.

Abstract: Provided is a plasma processing apparatus including: an electrostatic chuck configured to hold a substrate inside a vacuum container, a pulse power source configured to apply a pulse having positive and negative polarities as a bias voltage and a controller configured to control the positive and negative polarities of the pulse.

Abstract: There is provided a method of making a heat treated (HT) coated article to be used in shower door applications, window applications, or any other suitable applications where transparent coated articles are desired. The method may include heat treating a glass substrate coated with at least a layer of or including diamond-like carbon (DLC) or other type of carbon, with an oxygen barrier layer provided thereon directly or indirectly. Optionally, a release layer of a material such as zinc oxide or the like may be provided between the oxygen barrier layer and the DLC. In certain example embodiments, the oxygen content of at least part of the protective film when deposited may be determined based on whether the coated surface is to be bent in a convex manner, to be bent in a concave manner, or to remain flat. Following heat treatment, which may include bending the coated surface into a convex or concave shape, and quenching, the protective film may be removed by washing or the like.

Abstract: Systems and methods for preparing films using sequential ion implantation, and films formed using same, are provided herein. A structure prepared using ion implantation may include a substrate; an embedded structure having pre-selected characteristics; and a film within or adjacent to the embedded structure and including ions having a perturbed arrangement arising from the presence of the embedded structure. The perturbed arrangement may include the ions being covalently bonded to each other, to the embedded structure, or to the substrate, whereas the ions instead may be free to diffuse through the substrate in the absence of the embedded structure. The embedded structure may inhibit or impede the ions from diffusing through the substrate, such that the ions instead covalently bond to each other, to the embedded structure, or to the substrate. The film may include, for example, diamond-like carbon, graphene, or SiC having a pre-selected phase.

Abstract: Certain embodiments disclosed herein relate to the formation of multi-component oxide heterostructures (MCOH) using surface nucleation to pattern the atomic layer deposition (ALD) of perovskite material followed by patterned etch and metallization to produce ultra-high density MCOH nano-electronic devices. Applications include ultra-high density MCOH memory and logic, as well as electronic functionality based on single electrons, for example a novel flash memory cell Floating-Gate (FG) transistor with LaAlO3 as a gate tunneling dielectric. Other types of memory devices (DIMMS, DRAM, and DDR) made with patterned ALD of LaAlO3 as a gate dielectric are also possible.

Abstract: An exemplary light blocking plate includes a light pervious substrate, a filter film formed on the light pervious substrate, and a metal film layer formed on the light pervious substrate and the optical filter film. The metal film layer defines a through hole to expose a central portion of the optical filter film.