Abstract: A composite material having high hardness comprises a carbon nitrogen compound, such as CN.sub.x where x is greater than 0.1 and up to 1.33, deposited on a metal or metal compound selected to promote deposition of substantially crystalline CN.sub.x. The carbon nitrogen compound is deposited on a crystal plane of the metal or metal compound sufficiently lattice-matched with a crystal plane of the carbon nitrogen compound that the carbon nitrogen compound is substantially crystalline. A plurality of layers of the compounds can be formed in alternating sequence to provide a multi-layered, superlattice coating having a coating hardness in the range of 45-55 GPa, which corresponds to the hardness of a BN coating and approaches that of a diamond coating.

Abstract: A method of making a fuser member such as a fuser roller, pressure roller, or fuser belt, comprising of bonding an outermost fluoropolymer resin layer to an inner fluoroelastomer layer by means of a fluoropolymer-containing polyamide-imide primer layer.

Abstract: Treatment in a plasma of a composite reinforcing agent improves the bonding of the agent to the cement portion of the composite. This method facilitates the use of inexpensive readily available light, high tensile strength fibers as reinforcing agents. The reinforcing agents are activated by providing on the surface thereof charged atoms compatible with the cementitious portion of a composite desired to be strengthened.

Abstract: This invention provides a process for electrostatically applying a coating composition onto dielectric materials which have a dielectric constant less than 4.0. In this process, a positive charge is induced onto a coating composition. The dielectric material is electrically isolated, negatively charge, or both. The positively-charged coating composition is sprayed onto the dielectric material. If the dielectric material is charged negatively, the process of the present invention further includes the step of maintaining at least a portion of the negative charge on the dielectric material while positively-charged coating particles are being sprayed thereon.

Abstract: A method of reducing carbon incorporation into films is disclosed which comprises the steps of depositing a layer on a substrate by CVD using organic precursors, the layer comprising hydrocarbons or carbides; and utlizing a reactive hydrogen plasma to displace the hydrocarbons or carbides away from the layer.

Abstract: Disclosed is a composite metal sheet to be produced by chemically treating the surface of a metal substrate, coating and drying an organic resin-based composition thereon to form a undercoat layer, then coating thereon a two-layered resin interlayer composed of an adhesive layer of a modified polyolefin resin and a polyolefin resin layer at a thickness of from 50 to 300 .mu.m, then modifying the surface of said polyolefin resin layer by flame treatment or corona discharging treatment thereby forming functional groups in an amount of from 0.05 to 0.30 in terms of O/C representing the ratio of the amount of oxygens in the functional groups to the amount of carbons on the surface, and finally coating and drying an urethane-curing polyester resin paint or an urethane-curing fluorine resin paint at a thickness of from 8 to 35 .mu.m to form a top coat layer. The composite metal sheet has excellent corrosion resistance, weather resistance and formability.

Abstract: A chemical vapor deposition method of providing a layer of material atop a semiconductor wafer using an organic precursor includes, a) positioning a wafer within a chemical vapor deposition reactor; b) injecting an organic precursor to within the reactor having the wafer positioned therein, and maintaining the reactor at a temperature and a pressure which in combination are effective to deposit a first layer of material onto the wafer which incorporates carbon from the organic precursor; and c) after depositing the first layer, ceasing to inject the organic precursor into the reactor and injecting a component gas into the reactor and generating a plasma within the reactor against the first layer, the component gas and plasma generated therefrom having a component which is effective when in an activated state to interact with a component of the deposited first layer to remove carbon from the first layer and produce gaseous products which are expelled from the reactor.

Abstract: A process for depositing carbon nitride films on substrates or work pieces by means of plasma assisted energy controlled ion beam deposition. The process produces microscopically smooth, nearly stress free, insulating and transparent carbon nitride thin films at room (or elevated) temperature. In the process the substrate, tool or other component to be coated is placed in a vacuum chamber at room temperature and is acted upon by a source of negative carbon ions and a high flux plasma source of nitrogen radicals. The source of C.sup.- ions is hydrogen free and provides particle energies suitable for the production of films of high quality carbon nitride. The source of the nitrogen flux provides a high density of nitrogen radicals to interact with the C.sup.- ion beam and coat the substrate with carbon nitride. In a further embodiment of the process, which provides an even higher deposition rate, a source of N.sup.+ is added which provides charge neutralization and surface nitridation prior to deposition.

Abstract: For forming a photoluminescence layer on a semiconductor layer, ions are irradiated to a surface portion of a semiconductor layer where a photoluminescence layer is to be formed, and then, the semiconductor layer is immersed in a solution containing hydrofluoric acid, whereby the ion-irradiated and hydrofluoric-acid-treated portion forms a photoluminescence layer.

Abstract: A fibrous web which includes a first zone composed of fibers which have been treated with a surfactant and a second zone composed of fibers which have been exposed to a corona field. At least one of the first zone and the second zone constitutes less than all of the fibrous web. In addition, the fibers constituting the second zone also constitute a portion of the fibers of the first zone. The first zone and the second zone may involve essentially the same portion of the fibrous web, provided that both zones do not encompass the entire fibrous web. Both the first zone and the second zone may constitute less than all of the fibrous web. In certain embodiments, the fibrous web will be composed of fibers which are at least partially oriented in one direction. Either the first zone or the second zone may encompass all of the fibrous web. That is, the entire fibrous web may treated with a surfactant or exposed to a corona field. Desirably, the entire fibrous web will be treated with a surfactant.

Abstract: A pattern of a non-volatile high-performance ferroelectric thin film memory is formed by applying a composition containing hydrolytic metal compounds, and a photosensitizer which generates water when irradiated with active rays onto a substrate. The resultant film is exposed to active rays in compliance with a prescribed pattern to form an image and developed with a solvent to remove non-exposed portions, and then the remaining exposed portions are subjected to a heat treatment to convert the exposed portions into a dielectric substance comprising a metal oxide as expressed by the following formula (I):(Bi.sub.2 O.sub.2).sup.2+ (A.sub.m-1 B.sub.m O.sub.3m+1).sup.2-(I)where A is one or more elements selected from the group consisting of Ba, Sr, Pb and Bi; B is one or more elements selected from the group consisting of Ti, Nb and Ta; and m is an integer of from 2 to 5.

Abstract: Electrification is suppressed with a water-soluble electrification-suppressing film having an electron conductivity and comprising a polymer resin. A high electrification-suppressing effect which is also high in vacuum can be easily obtained by using the electrification-suppressing film with less contamination.

Abstract: A chemical vapor deposition method of providing a layer of material atop a semiconductor wafer using an organic precursor includes, a) injecting an organic precursor and a carrier gas into a reactor having a wafer positioned therein, and maintaining reactor conditions which are effective to deposit a first layer onto the wafer which incorporates carbon from the organic precursor; b) after depositing the first layer, ceasing to inject the organic precursor into the reactor and first injecting hydrogen gas into the reactor and generating a first reactive hydrogen plasma within the reactor against the first layer, the hydrogen effectively diffusing into the first layer and reacting with carbon therein to produce gaseous products which diffuse outwardly of the first layer and are expelled from the reactor; an additional reactive component can be provided; c) after the first reactive hydrogen plasma treatment, injecting the organic precursor and carrier gas to within the reactor, and maintaining the reactor at con

Abstract: A process for preparing coating compositions of a commingled hydrogel of a polyurethane-polyurea polymer hydrogel and at least one other polymer hydrogel of a polymer different from polyurethane-polyurea; a process for making materials composed of a polymeric plastic or rubber substrate or a metallic substrate, with a coating of the commingled hydrogel thereon; and a process for making medical devices with a coating of the commingled hydrogel thereon, are disclosed. The coating compositions tenaciously adhere to the substrate materials and medical devices to which they are applied due to bonding of a tie coat to a reactive substrate surface and due to the commingling of the two hydrogel components. The coating compositions and coated materials and medical devices are non-toxic and biocompatible, making them ideally suited for use in applications such as for catheters, catheter balloons and stents.

Abstract: A method for producing coated wood-based panels with rounded edge from a starting panel coated on at least one of its two sides, and which is subjected to a preforming or direct postforming process. The starting panel is coated using coatings based on unsaturated resins of the type curable by ionizing radiation.

Abstract: A photoresist-free method for making patterned films of metal oxides, metals, or other metal containing compounds is described. The method involves applying an amorphous film of a metal complex to a substrate. The film may be conveniently applied by spin coating using standard industry techniques. The metal complex used is photoreactive and undergoes a low temperature chemical reaction in the presence of light of a suitable wavelength. The end product of the reactions depends upon the atmosphere in which the reactions take place. Metal oxide films may be made in air. Patterned films may be made by exposing only selected portions of the film to light. Patterns of two or more materials may be laid down from the same film by exposing different parts of the film to light in different atmospheres. The resulting patterned film is generally planar. Separate planarization steps are not generally required.

Abstract: A perpendicular magnetic recording medium has a magnetic layer comprised of two stacked sublayers each in the form of ferromagnetic metal thin film consisting of columnar crystal grains wherein the angle .theta. between the average growth direction of the columnar crystal grains and a normal to the substrate is .theta..gtoreq.45.degree. for the lower sublayer and .theta..ltoreq.30.degree. for the upper sublayer, and the mean maximum diameter of columnar crystal grains of the lower sublayer is not smaller than the mean maximum diameter of columnar crystal grains of the upper sublayer. An apparatus suitable for the evaporation of the magnetic layer is arranged as shown in the Figure. Magnetic flux associated with the upper sublayer finds an escape to the lower sublayer, preventing formation of a closed loop of magnetic flux within the columnar crystal grains of the upper sublayer. The lower sublayer is magnetized, thus contributing to an improvement in reproduction output.

Abstract: The present invention relates to a stretched, multilayer, transparent film which is reflection-reduced on at least one side, consists predominantly of polypropylene and is very suitable as window film for envelopes.

Abstract: The present invention provides a new class of precursors for forming an improved diamond-like carbon coating on a workpiece. The precursors of the present invention are paraxylylenes, preferably dimers of paraxylylene, which are solid at room temperature and which will vaporize, pyrolize to substantially monomeric form, condense onto a workpiece, and spontaneously polymerize to form a "parylene" film which is free of precursor droplets and absorbed water. Upon bombardment with an ion beam, the parylene film is converted into a uniform, pinhole-free DLC coating.

Abstract: A copper film coated substrate includes a substrate and a copper film formed on a surface of the substrate. The copper film has an X-ray diffraction intensity of 2.0 cps/nm or more per unit film thickness at a crystal orientation (111) face of the copper film. A crystal orientation of a copper thin film is controlled by irradiating a surface of a substrate with inert gas ions before forming a copper thin film on the substrate by a physical vapor deposition process. A copper thin film is formed by irradiating a surface of a substrate with ions, and depositing a copper thin film on the irradiated substrate. In the ion irradiating step, an ion irradiation energy for a dosage of the irradiated ions is controlled, so that crystal is greatly grown to be orientated in a direction of copper (111) face with a less dosage of the irradiated ions.

Abstract: A method of and apparatus for treating a polyolefin surface to become receptive to inks and adhesives is disclosed. The present invention provides a method of and apparatus for treating a polyolefin surface to become receptive to inks and adhesives, using the steps of introducing the shaped object onto a conveyor belt; conveying the shaped object towards an output end of the conveyor belt; aligning and guiding the shaped object across a treatment device to treat the entire 360.degree. surface of the shaped object. The treatment device includes, for example, an electrode spark generator.

Abstract: Apparatus and process for polishing a diamond or carbon nitride film by reaction of the film with oxygen anions at the interface between the film and a superionic conductor (e.g., yttria stabilized zirconia) placed in contact with the film. Oxygen anions produced by the formation of vacancies in the superionic conductor are transported to the interface under the influence of a chemical gradient and react with the diamond or carbon nitride. Application of an electric field and/or heat can be used to increase the oxygen partial pressure on the side of the interface opposite the film. An oxygen plasma can be supplied to the superionic conductor such that oxygen ions from the plasma transpire through the superionic conductor to the interface and react with the diamond or carbon nitride.

Abstract: A method of forming synthetic diamond or diamond-like films on a substrate surface. The method involves the steps of providing a vapor selected from the group of fullerene molecules or an inert gas/fullerene molecule mixture, providing energy to the fullerene molecules consisting of carbon-carbon bonds, the energized fullerene molecules breaking down to form fragments of fullerene molecules including C.sub.2 molecules and depositing the energized fullerene molecules with C.sub.2 fragments onto the substrate with farther fragmentation occurring and forming a thickness of diamond or diamond-like films on the substrate surface.

Abstract: A method is provided for generating one or more differentiated zones of electrical conductivity or infrared emissivity in a thin semi-conducting layer of metallic oxide or oxides, comprising:subjecting the thin semi-conducting layer to an ion beam having sufficient energy to cause a change in electrical conductivity or infrared emissivity of the one or more zones without atomizing the thin semi-conducting layer, wherein the thin semi-conducting layer is at a high temperature during the subjecting step and the use of the method to prepare films for incorporation into transparent heating panes having uniform heating characteristics, especially for use in vehicles.

Abstract: Electrification is suppressed with a water-soluble electrification-suppressing film having an electron conductivity and comprising a polymer resin. A high electrification-suppressing effect which is also high in vacuum can be easily obtained by using the electrification-suppressing film with less contamination.

Abstract: A method of forming an oxide film of a high quality 400.degree. C. or below. Ions of an inert gas, whose kinetic energy is 90 or below eV, are applied on the surface of a material of a semiconductor, metal or alloy, and oxygen gas molecules are fed. Thereby, a thin oxide film of the material is formed on the surface of the material.

Abstract: In the ozone-activated deposition of insulating layers, different growth rates can be achieved on differently constituted surfaces. When the surfaces of the structured silicon substrates lying at different levels are differently constituted or, respectively, are intentionally varied such that the SiO.sub.2 insulating layer grows more slowly on the higher surfaces than on the more deeply disposed surfaces and when deposition is carried out until the surfaces of the rapidly growing and slowly growing layer regions form a step-free, planar level, a local and global planarization is achieved.

Abstract: Process for forming diamond-like carbon coatings on metal surfaces to produce increased resistance to penetration, abrasion, and corrosion. A Ni/P coating is formed on an uncoated metal workpiece by-electroless deposition. While the workpiece is heated to harden the Ni/P coating, a vaporized stream of silicon is directed onto the Ni/P coating and the stream of silicon over the Ni/P coating is bombarded with an ion beam such that a NiSi.sub.2 layer is formed at the interface of the Ni/P coating and silicon and a silicon overlayer is formed over the NiSi.sub.2 layer. A vaporized stream of carbon-containing precursor molecules is directed onto the silicon overlayer such that a film of the precursor molecules condenses on the silicon overlayer. The film of precursor molecules is bombarded with an ion beam sufficiently to form a layer of diamond-like carbon on the silicon overlayer. A Ni/B solution or Ni/SiC solution can be used instead of the Ni/P solution, and germanium can be used instead of silicon.

Abstract: A method of producing a doped diamond, typically a boron doped diamond, is provided. The method involves multiple cold implantation/rapid annealing steps. A doped diamond can be produced containing a high concentration of dopant atoms.

Abstract: The object of the present invention is to provide sliding members having preferable lubrication and seizure resistance. Sliding members comprising a columnar texture which is composed from at least one of metal nitrides, metal oxides, metal carbides, and metals on a base member, wherein the columnar texture is composed of assemblies of fine columnar asperities, with intervals formed between the columnar asperities being connected to each other so as to form a net work, and with gaseous, liquid, or solid lubricants being maintained in the intervals. The mutually connected intervals in the columnar texture are superior in filling and holding of lubricants, and the above described superiorities improve lubrication and seizure resistance and extend sliding life.

Abstract: To provide a process for coating substrate material in which coating material is ablated in an ablation region by a laser beam in a coating chamber containing a negative pressure, propagates in the form of a coating particle stream in the direction of the substrate material and is deposited on it in the form of a coating, with which substrate material can be coated in large quantities by laser ablation, it is proposed that the substrate material be flat material, that the flat material be passed continuously as a continuous strip through the coating chamber and coated under the negative pressure substantially maintained therein, and that the necessary coating material be fed to the coating chamber while the negative pressure is substantially maintained therein.

Abstract: A copper film coated substrate includes a substrate and a copper film formed on a surface of the substrate. The copper film has an X-ray diffraction intensity of 2.0 cps per unit film thickness at a crystal orientation (111) face of the copper film. A crystal orientation of a copper thin film is controlled by irradiating a surface of a substrate with inert gas ions before forming a copper thin film on the substrate by a physical vapor deposition process. A copper thin film is formed by irradiating a surface of a substrate with ions, and depositing a copper thin film on the irradiated substrate. In the ion irradiating step, an ion irradiation energy for a dosage of the irradiated ions is controlled, so that crystal is greatly grown to be orientated in a direction of copper (111) face with a less dosage of the irradiated ions.

Abstract: An adherent protective coating of a refractory material is produced on the surface of carbonaceous, refractory, ceramic, metallic or other materials serving as components of electrolytic cells operating at high temperature, by applying to such surfaces a well chosen micropyretic reaction layer from a slurry, which when dried is ignited to initiate a self-sustaining micropyretic reaction, along a combustion front, to produce condensed matter forming such refractory protective adherent coating. The slurry is preferably applied in several layers, the first layer(s) to facilitate adherence and the last layer(s) to provide protection, and may contain some preformed non-reactant materials. The electrolytic cells whose components require such coatings are especially those operating at high temperature with a molten salt electrolyte, particularly those for the production of metals, aluminium being the most important.

Abstract: A process is disclosed for the pretreatment of a carbon-coated substrate to provide a uniform high density of nucleation sites thereon for the subsequent deposition of a continuous diamond film without the application of a bias voltage to the substrate. The process comprises exposing the carbon-coated substrate, in a microwave plasma enhanced chemical vapor deposition system, to a mixture of hydrogen-methane gases, having a methane gas concentration of at least about 4% (as measured by partial pressure), while maintaining the substrate at a pressure of about 10 to about 30 Torr during the pretreatment.

Abstract: A cell adhesive material with excellent cell adhesion and cell proliferating property and a method for producing the same are provided. The adhesion and proliferation of cells can be improved remarkably by the surface modification of a cell adhesive material comprising a polymer material containing carbon as a constituting element, such as polystyrene or segmented polyurethane, wherein at least a part of the surface is modified by ion bombardment through ion implantation. The method for producing such cell adhesive material comprises implanting ions into at least a part of the surface of the polymer material. The cell adhesive material and the method for producing the same are promising for application to cell culture petri dishes and hybrid-type medicinal materials.

Abstract: A method for producing high quality, thin layer films of inorganic compounds upon the surface of a substrate is disclosed. The method involves condensing a mixture of preselected molecular precursors on the surface of a substrate and subsequently inducing the formation of reactive species using high energy photon or charged particle irradiation. The reactive species react with one another to produce a film of the desired compound upon the surface of the substrate.

Abstract: Herein described is a process for forming ohmic electrodes to a diamond film, comprising the steps of implanting the ions of at least one element selected from the group consisting of B, Li, Na, Ar, C, Ti, W, Ta, Mo, Fe, Ni and Co on the diamond film at the surface areas to be formed with electrodes by an ion implantation method so as to form interface levels in the vicinity of the surface areas to be formed with electrodes, forming electrodes to the ion implanted areas, and heating the diamond film formed with the electrodes at a temperature of 400.degree. C. or more. With this process charge carriers can be moved between electrodes and the diamond film through the interface levels to thereby obtain ohmic electrode diamond film contacts, and also the surface recombination speed of the charge carriers is increased for reducing the contact resistances between the electrodes and the diamond film to thereby obtain ohmic electrode-diamond film contacts each having the small contact resistance.

Abstract: The object of the present invention is a deposition process of a coating of the ceramic type based on carbides, nitrides, or carbonitrides of metallic elements such as Cr, V, Zr, W, Mo, Co, Mn, Ni, Hf, Ta, Ti, Nb and Fe in which the coating of the ceramic type is deposited at low temperature in the vapour phase on a metallic substrate from organo-metallic precursors wherein, prior to this deposition in the vapour phase and without subsequent placing in contact with an oxidizing and/or polluting atmosphere, a reactive ionic pickling is carried out in a reducing atmosphere.

Abstract: A method for forming interconnections in microelectronic devices, including interconnections through small vias between different layers in the microelectronic devices include the spin coating of a film comprising a polyoxometalate and an organic material on the substrate. The film is optionally patterned by lithography, the polymer is removed, and the polyoxometalate is reduced to a metal layer. The metal layer may in one embodiment provide a nucleating zone for the deposition of metal.

Abstract: An amorphous semiconductor material which does not age under the action of light is particularly suitable for red-sensitive photovoltaic components and is highly photosensitive. The amorphous semiconductor material is germanium based, particularly a silicon-germanium alloy. To this end, the semiconductor material has a compact, void-free structure, is manufactured in a glow discharge reactor by appropriate variation of the precipitation parameters, and contains one element from Group VI A of the periodic system.

Abstract: A method for patterning precursor film, a product thereof, a method for preparing a patterned ceramic film and a processing workpiece. The method for patterning precursor film includes the steps of depositing a blocking layer over the precursor film, patterning the overlaid blocking layer to uncover portions of the precursor film, irradiating the patterned blocking layer and uncovered portions of the precursor film with a beam sufficiently energetic to radiation modify the full thickness of unmasked portions of the precursor film and insufficiently energetic to radiation modify portions of the precursor film covered by the blocking layer, and developing the precursor film. The blocking layer has a lesser thickness than the precursor film, but is sufficiently thick to block an irradiating beam having the minimal energy necessary to radiation modify the full thickness of the precursor layer.

Abstract: A time-efficient method for smoothing a surface 20 of an applied coating composition 22 is disclosed herein. In particular, the present invention sets forth a technique for expediting the subsidence of coating surface nonmetallic vertical irregularities R1, R2. The technique of the present invention is applied subsequent to the application of the coating composition 22 to an electrically conductive object 24, which results in the formation of a coating surface 20. The technique of the present invention includes the step of generating electrically charged particles 40 in a volume of space adjacent to the coating surface 20. The charged particles 40 cause an electric field to develop across the coating composition 22, which induces the charged particles 40 to exert pressure on the coating surface 20.

Abstract: Biocompatible material is deposited onto a substrate by laser deposition, for example by pulsed laser beam deposition and ion-assisted pulsed laser beam deposition. The deposition can be done at room temperature, in a variety of different atmospheres, with control over the stoichiometry, adhesion and porosity of the deposited film. Apparatus for carrying out the deposition, and articles formed by such deposition, are also described. The articles so formed are particularly useful as medical prosthesis, for example, implants.

Abstract: A microtiter plate containing a plurality of reaction wells for conducting immunogenic reactions the bottom wall of the reaction well has an inner surface which is substantially hydrophilic, and the side wall of the reaction well has an inner surface which is substantially hydrophobic and a process for producing said trays.

Abstract: An improved method of manufacturing a semiconductor device includes forming an insulating layer on a substrate, depositing a metal film layer on the insulating layer and depositing a photoresist layer on the metal film layer. The photoresist layer is formed with openings through which a predetermined surface of the metal film layer is exposed. The predetermined surface of the metal film layer is subjected to dry etching so that an underlying portion of the insulating layer is exposed. The remaining portion of the photoresist layer is then subjected to ashing by using an isopropyl alcohol-containing gas to expose the surface of said metal film layer.

Abstract: Method of chromatographically separating a mixture by contacting said mixture under chromatographic separation conditions with a chromatographic separation stationary phase comprising a polymer formed by coating substantially all of the surfaces of a microporous, comminuted substrate material with a monomer that is subsequently polymerized in situ with a cold-gas plasma discharge.

Abstract: A membrane for extracting hydrogen from gaseous and gaseous-liquid mixtures at low temperature makes use of a palladium or palladium alloy substrate and permits reduction of the surface resistance of the substrate. The membrane includes combined coatings including vacuum-deposited palladium ions driven into the substrate with inert gas ions and an electrochemically applied catalyst coating in the form of palladium or palladium/platinum black. A method for fabricating the membrane and a method for using the membrane to separate ultra-pure hydrogen are also disclosed.

Abstract: A method of and an apparatus for synthesizing a diamondlike thin film on a substrate, the method comprising the steps of: generating plasma of gas containing hydrocarbon gas, in a first vacuum vessel having an inflow portion and an outflow portion for the gas such that the substrate is provided in a second vacuum vessel maintained at a pressure lower, by one figure or more, than that of the first vacuum vessel due to flow resistance of the gas between the outflow portion and the substrate; and irradiating the plasma onto the substrate by pressure difference between the first vacuum vessel and the second vacuum vessel while an AC power is being applied to at least one of the substrate and an internal electrode provided in the first vacuum vessel.

Abstract: An oxide superconducting film is formed by CVD. The starting material gas sources are Ba(DPM).sub.2, Ba(DPM).sub.2 .multidot.(THF).sub.n or Ba(DPM).sub.2 .multidot.(DMF).sub.n ; Cu(DPM).sub.2, Cu(DPM).sub.2 .multidot.(THF).sub.n or Cu(DPM).sub.2 .multidot.(DMF).sub.n ; and M(DPM).sub.3, M(DPM).sub.3 .multidot.(THF).sub.n or M(DPM).sub.3 .multidot.(DMF).sub.n, whereDPM is 2,2,6,6-tetramethyl-3,5-heptaneodianate represented by the chemical formula:CH.sub.3 C(CH.sub.3).sub.2 COCHCOC(CH.sub.3).sub.2 CH.sub.3THF is tetrahydrofuran represented by the chemical formula: ##STR1## DMF is dimethylformamide represented by the chemical formula:HCON(CH.sub.3).sub.2M is an element chosen from the list:Y, La, Nd, Pm, Sm, Eu, Er, Gd, Tb, Dy, Ho, Tm, Yb and Lu,and n is any integer. The starting gas sources are introduced into a growth tank after gasification together with at least one of the gases O.sub.2, O.sub.3, or N.sub.2 O, and the oxide film being formed on a substrate placed in said growth tank.

Abstract: A method for surface treating a resin composition molded article and a method for coating a resin composition molded article are disclosed, which comprise irradiating a molded article with ultraviolet light having an irradiation wavelength in the region of 300 nm or less and, if desired, coating the thus UV-irradiated surface with a coating, the molded article being obtained from a resin composition comprising (I) 100 parts by weight of a resin composition comprising (A) from 5 to 99.5% by weight of a polypropylene resin selected from the group consisting of polypropylene, modified polypropylene, and a modified polypropylene/polypropylene composition and (B) from 0.