Cleaning Or Removing Part Of Substrate (e.g., Etching With Plasma, Glow Discharge, Etc.) Patents (Class 427/534)
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Patent number: 6743369Abstract: A method of manufacturing an electrode for a secondary battery by depositing a thin film composed of active material on a current collector in which a surface-treated layer such as an antirust-treated layer is formed, including the steps of: removing at least part of the surface-treated layer by etching the surface of the current collector with an ion beam or plasma in order to improve the diffusion of the current collector material into the active material thin film; and depositing the thin film on the surface of the current collector subjected to the etching step.Type: GrantFiled: December 17, 2001Date of Patent: June 1, 2004Assignee: Sanyo Electric Co., Ltd.Inventors: Daizo Jito, Hisaki Tarui
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Patent number: 6743481Abstract: A multilayer coating of fullerene molecules is deposited on a substrate, and layers of the multilayer coating are removed leaving an approximate monolayer coating of fullerene molecules on the substrate. In some embodiments, a beam generator, such as an ion beam, electron beam or laser generator, produces a beam arranged to break the weaker fullerene-to-fullerene intermolecular bond of the multilayer coating and inadequate to break the stronger fullerene-to-substrate association/bond of the coating. The beam is directed at the multilayer coating to break the fullerene-to-fullerene intermolecular bond. In other embodiments, the monolayer of fullerene molecules is formed by applying a solvent to the multilayer coating to break the fullerene-to-fullerene intermolecular bond of the multilayer coating.Type: GrantFiled: May 31, 2001Date of Patent: June 1, 2004Assignee: Seagate Technology LLCInventors: Joel W. Hoehn, John W. Dykes, James E. Angelo, William D. Mosley, Richard T. Greenlee, Brian W. Karr
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Patent number: 6723389Abstract: A coated cemented carbide excellent in peel strength includes a cemented carbide substrate comprising a hard phase containing tungsten carbide and a binder phase, and a hard film being provided on a surface of the substrate with a single layer or two or more laminated layers, wherein (1) at least part of the surface of the substrate is subjected to machining, and (2)(i) substantially no crack is present in particles of the hard phase existing at an interface of the surface of the substrate subjected to machining and the hard film and/or (2)(ii) peak intensities of crystal surfaces satisfy hs(001)wc/hs(101)wc≧1.1×hi(001)wc/hi(101)wc wherein hs(001)wc and hs(101)wc each represent a peak intensity of (001) crystal face and that of (101) crystal face at the surface of the substrate subjected to machining processing, respectively, and hi(001)wc and hi(101)wc each represent a peak intensity of (001) crystal face and that of (101) crystal face in the substrate, respectively.Type: GrantFiled: December 20, 2001Date of Patent: April 20, 2004Assignee: Toshiba Tungaloy Co., Ltd.Inventors: Masaki Kobayashi, Hiroshi Kitada
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Patent number: 6720035Abstract: The method includes the phases of preparation of said ceramic discs once lapped and polished; and deposition of a layer of hydrogenated amorphous carbon (or DLC: Diamond-Like Carbon) on said ceramic discs, said deposition phase including the following stages: exposure of said ceramic discs to vacuum; application of a cleaning plasma on said ceramic discs; application of a first deposition plasma on said ceramic discs; and application of a second deposition plasma on said ceramic discs. The ceramic disc is characterized in that it includes a layer of hydrogenated amorphous carbon deposited directly onto the ceramic disc. Thereby are obtained ceramic discs for utilization in mixer valves of single-lever mixer type whose friction coefficient is lower that that of the ceramic discs currently used, all this without loss of leak tightness, without having to use grease and with a low manufacturing cost.Type: GrantFiled: July 15, 2002Date of Patent: April 13, 2004Assignee: Industrias Ramon Soler, S.A.Inventors: Josè-Luis Andújar, Joan Esteve Pujol, Xavier Ferret Picazo, Maria Benelmekki
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Patent number: 6706201Abstract: For manufacturing substrate materials which are needed for the manufacture of electrical circuit carriers, methods are known in which metal layers are applied to a dielectric substrate by means of a glow discharge process and thereafter additional metal layers are applied by means of electroplating processes. These methods however are not suitable for the manufacture of substrate materials which are suitable for high frequency applications in the gigahertz range. The invention starts from the previously-mentioned methods and solves the described problem through the use of fluoropolymers and through coating of these materials by means of a glow discharge process with nickel, since by this means even very smooth surfaces of the substrate can be securely coated. The metallised materials can be coated with additional metal layers from electroless or electrolytic deposition baths.Type: GrantFiled: December 21, 2000Date of Patent: March 16, 2004Assignee: Atotech Deutschland GmbHInventors: Heinrich Meyer, Ralf Schulz, Roland Heinz, Eckart Klusmann
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Patent number: 6706334Abstract: Disclosed are a processing method and apparatus for removing a native oxide film from the surface of a subject to be treated. In this method and apparatus, gas generated from N2, H2 and NF3 gases is reacted with the surface of the subject to degenerate the native oxide film into a reactive film. If the subject is heated to a given temperature, the reactive film is sublimated and thus the native oxide film is removed. Plasma is generated from the N2 and H2 gases and then activated to form an activated gas species. The NF3 gas is added to the activated gas species to generate an activated gas of these three gases. In the step of forming the reactive film, the subject is cooled to not higher than a predetermined temperature by a cooling means. In the step of sublimating the reactive film, the subject is lifted up to a predetermined heating position.Type: GrantFiled: November 10, 1999Date of Patent: March 16, 2004Assignee: Tokyo Electron LimitedInventors: Yasuo Kobayashi, Kotaro Miyatani, Kaoru Maekawa
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Patent number: 6699531Abstract: In a case where a CF film is used as an interlayer dielectric film for a semiconductor device, when a wiring of tungsten is formed, the CF film is heated to a temperature of, e.g., about 400 to 450° C. At this time, a F gas is released from the CF film, so that there are various disadvantages due to the corrosion of the wiring and the decrease of film thickness. In order to prevent this, thermostability is enhanced. A compound gas of C and F, e.g., C4F8 gas, and a hydrocarbon gas, e.g., C2H4 gas, are used as thin film deposition gases. These gases are activated as plasma to deposit a CF film on a semiconductor wafer 10 using active species thereof. Then, a hydrogen plasma producing gas, e.g., H2 gas, is introduced to be activated as plasma, and the CF film deposited on the wafer 10 is irradiated with the H plasma.Type: GrantFiled: April 28, 2000Date of Patent: March 2, 2004Assignee: Tokyo Electron LimitedInventor: Noriaki Fukiage
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Patent number: 6692834Abstract: Coating an implantable device, such as micro electromechanical devices, is highly desirable to protect the implantable device from corrosion. A coating method includes depositing, preferably by plasma glow discharge, a reactant monomer on at least one surface of an implantable device, preferably at ambient temperature. The method will likely decrease the manufacturing time required for assembling such devices because completely assembled devices can be coated.Type: GrantFiled: June 28, 1999Date of Patent: February 17, 2004Assignee: Medtronic, Inc.Inventors: Gonzalo Martinez, Catherine E. Taylor, Kenneth W. Keeney, Markus Haller
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Patent number: 6656528Abstract: A method of making highly reflective mirrors on a wafer in the manufacture of photonic devices involves preheating a wafer to remove adsorbed volatile contaminants at a temperature between about 300 and 600° C. The wafer surface is etched at a temperature between about 300 and 600° C. to remove absorbed and chemically absorbed contaminants in the presence of a plasma to prevent poisoning. The wafer surface is thoroughly cooled so as to as reduce the surface mobility of the impinging atoms during the subsequent metallic deposition. A deposition is then carried out on the cooled wafer of a gettering layer for gettering hydrogen, oxygen and nitrogen. A metallic reflective layer is then deposited in a deposition chamber, and finally the wafer is removed from the deposition chamber to prevent excessive bulk oxidation.Type: GrantFiled: November 16, 2001Date of Patent: December 2, 2003Assignee: Dalsa Semiconductor Inc.Inventors: Luc Ouellet, Yves Tremblay
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Patent number: 6648973Abstract: A process using ultraviolet light having a wavelength of 160 to 500 nanometers without higher wavelengths and a high intensity between about 1 and 40 watts/cm2 to surface treat a carbon containing fiber is described. The treated fiber contains an enhanced amount of oxygen on the surface which significantly improves the bondability of the fiber in composites.Type: GrantFiled: October 22, 2002Date of Patent: November 18, 2003Assignee: Board of Trustees of Michigan State UniversityInventors: Lawrence T. Drzal, Michael J. Rich
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Patent number: 6633426Abstract: A novel optical-electrical MEMS device overlaid or covered with an optically transmissive substrate held spaced in inverted preferably flip-chip bonded fashion to the device, with transparent electrodes provided in the substrate for generating an upper mirror-actuating field to supplemental the customary lower mirror-well field, enabling complementary operation.Type: GrantFiled: May 10, 2001Date of Patent: October 14, 2003Assignee: Analog Devices, Inc.Inventors: Vernon Shrauger, Bart Romanowicz, Matt Laudon, Charles Hsu
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Patent number: 6632470Abstract: A method of modifying surfaces of a device, for example, a medical device, is disclosed. The method includes modifying a surface of a device by providing a device, exposing the device to a reactive gas and plasma energy to create a plasma deposited surface on the device, and quenching the device with the reactive gas. The device exhibits changes in its surface properties thereby making it more desirable for an intended use.Type: GrantFiled: January 31, 2001Date of Patent: October 14, 2003Assignee: PercardiaInventors: Marco Morra, Clara Cassinelli, Linda Lee Cahalan, Patrick T. Cahalan
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Patent number: 6613394Abstract: Described is a method of treating or coating homogeneously at least a portion of the surface of a material selected from metallic materials having a thickness of less than 100 &mgr;m and/or polymeric materials. The method of the present invention comprises exposing at least a portion of the surface of the material to an atmospheric plasma generated by an indirect plasmatron. In the method of the present invention, the surface of the material may undergo at least one of an increase in surface tension, a surface grafting, a surface cleaning and a surface sterilization.Type: GrantFiled: March 6, 2001Date of Patent: September 2, 2003Assignee: Wolff Walsrode AGInventors: Christian Kuckertz, Sven Jacobsen, Rainer Brandt, Klaus Landes, Ralf Hartmann
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Patent number: 6614581Abstract: A microstructure is provided which facilitates alignment by allowing movement of the microstructure between one of a plurality of positions. The microstructure is included in an electromechanical machine which comprises a base layer, an actuator and two or more structural plates. One of the structural plates can be deflected to select a movement limit for the other structural plate. Methods for configuring the structural plates relative to each other to facilitate alignment are also provided.Type: GrantFiled: July 3, 2001Date of Patent: September 2, 2003Assignee: Network Photonics, Inc.Inventor: David P. Anderson
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Patent number: 6610373Abstract: In a device for forming magnetic film which deposits magnetic material on a substrate 12, a device is provided which, before the magnetic film is formed in a magnetic film-forming chamber 11, cleans one or both of the film-forming face and reverse face of the substrate 12 in a cleaning processing chamber 13. The cleaning mechanism carries out cleaning by placing a substrate on a horseshoe-shaped insulator substrate-holding part 51 which moves up and down, and emission of gas from the reverse face of the substrate and the like is brought about by generating Ar plasma between the upper periphery of the substrate, the substrate and a lower insulator 61 of the substrate.Type: GrantFiled: October 10, 2001Date of Patent: August 26, 2003Assignee: Anelva CorporationInventors: Daisuke Nakajima, Koji Tsunekawa, Naoki Watanabe
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Patent number: 6602371Abstract: A method of making a vehicle windshield. First and second flat glass sheets are bent together into a shape desired for the windshield. The bent sheets are separated, and an interlayer (e.g., PVB) positioned therebetween. After the sheets have been heat laminated to one another via the interlayer, the convex tin side of the outer sheet is ion beam milled to shave off a portion thereof. Then, a diamond-like carbon (DLC) inclusive coating is deposited using an ion beam(s) on the milled convex shaped surface of the laminate to produce a windshield. In certain optional embodiments, the windshield may be hydrophobic in nature.Type: GrantFiled: February 27, 2001Date of Patent: August 5, 2003Assignee: Guardian Industries Corp.Inventor: Vijayen S. Veerasamy
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Patent number: 6596342Abstract: A method of coating of mass-produced bulk goods (5) including loading the bulk goods (5) into a rotatable drum (1) through an opening (4) formed in a side surface of the drum (1), heating a coating material in coating apparatus (8), having a spray gun (6) and provided outside of the rotatable drum (1); and thereafter, applying the heated coating material to the bulk goods (5) with the spray gun (6) through the drum opening (4).Type: GrantFiled: December 21, 2001Date of Patent: July 22, 2003Assignee: Hilti AktiengesellschaftInventors: Rainer Batliner, Gerald Felder, Werner Schörghofer
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Patent number: 6595623Abstract: There is provided a plastic base material having a reformed layer 2 formed on a plastic substrate 1 by reforming the surface layer thereof into a component containing fluorine at the ratio of the number of fluorine atoms to the number of carbon atoms, F/C, of 0.85 or more and 1.30 or less, and having highly durable water repellency and ink repellency. The method of manufacturing such a plastic base material comprises a step of reforming the surface of the plastic substrate 1 into a fluorine-containing carbon layer by imparting a specific energy to fluorine-containing plasma by applying an RF bias voltage to the plastic substrate 1 to form a surface having highly durable water repellency and ink repellency. A highly durable ink-jet printer that enables high-quality printing can be provided by the use of a head for an ink-jet printer fabricated by using this plastic base material.Type: GrantFiled: September 18, 2001Date of Patent: July 22, 2003Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Koichi Kotera, Hiroyoshi Tanaka, Isamu Inoue, Osamu Watanabe
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Patent number: 6582857Abstract: The current invention performs short pulse laser ablation of clear defect regions on a mask prior to patching the clear defect regions. The short-pulse laser ablation removes any residue that absorbs light. Thus, the ablation completely cleans the surface of the clear defect regions, meaning that any patches of the surface will better adhere to the surface of the mask. This is particularly important during those situations where a later etch of a conductive surface added to the mask creates a solvent because the etchant interacts with residue on the mask, and wherein the solvent attacks the patch material at the patch material's interface.Type: GrantFiled: March 16, 2000Date of Patent: June 24, 2003Assignee: International Business Machines CorporationInventors: Philip S. Flanigan, Dennis M. Hayden, Michael S. Hibbs, Timothy E. Neary
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Patent number: 6578254Abstract: A process for fabricating coils using a Damascene process uses a curved substrate having a surface extending along and about an axis made of a first material. A groove is formed in the curved surface along and around said axis, and the groove is filled with a second material that is different from the first material to form a coil of second material in said first material. Excess second material is then removed from the surface of the first material, leaving the coil of second material in the groove.Type: GrantFiled: December 8, 2000Date of Patent: June 17, 2003Assignee: Sandia CorporationInventors: David P. Adams, Michael J. Vasile
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Patent number: 6576538Abstract: A technique for more efficiently forming conductive elements, such as conductive layers and electrodes, using chemical vapor deposition. A conductive precursor gas, such as a platinum precursor gas, having organic compounds to improve step coverage is introduced into a chemical vapor deposition chamber. A reactant is also introduced into the chamber that reacts with residue organic compounds on the conductive element so as to remove the organic compounds from the nucleating sites to thereby permit more efficient subsequent chemical vapor deposition of conductive elements.Type: GrantFiled: August 30, 2001Date of Patent: June 10, 2003Assignee: Micron Technology, Inc.Inventors: Weimin Li, Sam Yang
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Patent number: 6572934Abstract: In manufacturing a magnetic recording disk, a magnetic film for a recording layer is deposited on a substrate of the magnetic recording disk in a magnetic-film deposition chamber, and the substrate is transferred from the magnetic-film deposition chamber to a lubricant-layer preparation chamber without exposing the substrate to the atmosphere. Then, a lubricant layer is prepared on the substrate in the lubricant-layer preparation chamber.Type: GrantFiled: February 1, 2001Date of Patent: June 3, 2003Assignees: Anelva Corporation, Nihon Micro Coating Co., Ltd.Inventors: Naoki Watanabe, Nobuyoshi Watanabe, Kazunori Tani, Shinji Furukawa, Hiromi Sasaki, Osamu Watabe
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Patent number: 6572935Abstract: A plasma-based method for the deposition of diamond-like carbon (DLC) coatings is described. The process uses a radio-frequency inductively coupled discharge to generate a plasma at relatively low gas pressures. The deposition process is environmentally friendly and scaleable to large areas, and components that have geometrically complicated surfaces can be processed. The method has been used to deposit adherent 100-400 nm thick DLC coatings on metals, glass, and polymers. These coatings are between three and four times harder than steel and are therefore scratch resistant, and transparent to visible light. Boron and silicon doping of the DLC coatings have produced coatings having improved optical properties and lower coating stress levels, but with slightly lower hardness.Type: GrantFiled: October 27, 1999Date of Patent: June 3, 2003Assignee: The Regents of the University of CaliforniaInventors: Xiao-Ming He, Deok-Hyung Lee, Michael A. Nastasi, Kevin C. Walter, Michel G. Tuszewski
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Patent number: 6565930Abstract: A method and apparatus are taught for treating paper webs for obtaining the proper surface characteristics to promote adhesion of nonphotosensitive coating materials and/or layers typically coated thereon. The web is passed through a high-voltage sheath region or dark space of the plasma generated by a powered electrode residing in a discharge zone. The frequency of the driving voltage must be above a lower bound dictated by the properties of the paper support and the plasma, and it must be below an upper bound beyond which the sheath voltages drop significantly and it is observed that the benefits of this approach diminish. The dark space is generated by a treatment electrode in a treatment zone. There is a counter electrode having a surface area in said treatment zone which is at least as great as the surface area of the treatment electrode.Type: GrantFiled: May 19, 2000Date of Patent: May 20, 2003Assignee: Eastman Kodak CompanyInventors: Jeremy M. Grace, Louis J. Gerenser, Christine J. Landry-Coltrain, Kurt D. Sieber, Michael J. Heinsler, Dennis R. Freeman
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Patent number: 6562416Abstract: Low resistant vias are formed by sequentially treating an opening in an interlayer dielectric and the exposed surface of a lower metal feature with an NH3 plasma followed by a N2/H2 plasma, thereby removing any oxide on the metal surface and removing residual polymers or polymeric deposits generated during etching to form the opening. Embodiments include forming a dual damascene opening in a low-k interlayer dielectric exposing the upper surface of a lower Cu or Cu alloy feature, sequentially treating the opening and the upper surface of the lower metal feature with an NH3 plasma and then with a N2/H2 plasma, Ar sputter etching, depositing a barrier layer lining the opening, depositing a seedlayer and filling the opening with Cu or a Cu alloy.Type: GrantFiled: May 2, 2001Date of Patent: May 13, 2003Assignee: Advanced Micro Devices, Inc.Inventors: Minh Van Ngo, Robert A. Huertas, Dawn Hopper
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Patent number: 6558735Abstract: A method for controlling the deposition of an organic layer in making an organic light-emitting device includes depositing at a deposition zone organic material forming a layer of the organic light-emitting device and providing a movable sensor which, when moved into the deposition zone and is being coated during the depositing step, provides a signal representing the deposition rate and thickness of the organic material forming the layer. The method also includes controlling the deposition of the organic material in response to the signal to control the deposition rate and thickness of the deposited organic material forming the layer, moving the movable sensor from the deposition zone to a cleaning position, and removing organic material from the movable sensor to permit reuse of the movable sensor.Type: GrantFiled: April 20, 2001Date of Patent: May 6, 2003Assignee: Eastman Kodak CompanyInventors: Michael A. Marcus, Anna L. Hrycin, Steven A. Van Slyke
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Patent number: 6558733Abstract: An implantable prosthesis, for example a stent, is provided having one or more micropatterned microdepots formed in the stent. Depots are formed in the prosthesis via chemical etching and laser fabrication methods, including combinations thereof. They are formed at preselected locations on the body of the prosthesis and have a preselected depth, size, and shape. The depots can have various shapes including a cylindrical, a conical or an inverted-conical shape. Substances such as therapeutic substances, polymeric materials, polymeric materials containing therapeutic substances, radioactive isotopes, and radiopaque materials can be deposited into the depots.Type: GrantFiled: October 26, 2000Date of Patent: May 6, 2003Assignee: Advanced Cardiovascular Systems, Inc.Inventors: Syed F. A. Hossainy, Li Chen
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Patent number: 6555240Abstract: A film laminate for printing comprises a polyolefin film in which at least one side is surface-modified and an anchor layer formed on the surface-modified side of the polyolefin film and containing an oxazoline group-modified resin. The film laminate is prepared by subjecting at least one side of a longitudinally oriented polyolefin film to a corona discharge treatment, forming an ethylene-acrylic acid type copolymer layer on the corona discharge-treated side of the film, laterally orienting the film, and then forming an anchor layer comprising a binder resin, and an oxazoline group-modified resin, on the modified surface of the surface-modified polyolefin film subjected to the corona discharge treatment. The film laminate for printing is excellent in its transparency and it is also excellent in the adhesion to a coated layer.Type: GrantFiled: November 21, 2000Date of Patent: April 29, 2003Assignee: Oji Paper Co., Ltd.Inventors: Yoshiharu Nishikori, Koichi Katayama, Yuichi Ogawa, Noboru Sakaushi
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Patent number: 6541397Abstract: A method is provided for processing a substrate including removing amorphous carbon material disposed on a low k dielectric material with minimal or reduced defect formation and minimal dielectric constant change of the low k dielectric material. In one aspect, the invention provides a method for processing a substrate including depositing at least one dielectric layer on a substrate surface, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less, forming amorphous carbon material on the at least one dielectric layer, and removing the one or more amorphous carbon layers by exposing the one or more amorphous carbon layers to a plasma of a hydrogen-containing gas.Type: GrantFiled: March 29, 2002Date of Patent: April 1, 2003Assignee: Applied Materials, Inc.Inventor: Christopher Dennis Bencher
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Patent number: 6537606Abstract: The present invention provides apparatus and methods to carry out the task of both reducing the surface roughness (smoothing) and improving the thickness uniformity of, preferably, but not limited thereto, the top silicon film of a silicon-on-insulator (SOI) wafer or similar thin-film electronic and photonic materials (workpiece). It also provides a method and apparatus for smoothing the surface of a (preferably) SOI wafer (workpiece) and for making the surface of the silicon film of a (preferably) SOI wafer cleaner and more free from contaminants.Type: GrantFiled: July 10, 2001Date of Patent: March 25, 2003Assignee: Epion CorporationInventors: Lisa P. Allen, David B. Fenner
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Patent number: 6517688Abstract: A method of smoothing a surface of a diamond coating of a diamond-coated body, by using an arc-type ion plating device in which at least one target is disposed. The method includes: (a) a step of causing arc discharge between an anode, and a cathode which is provided by each of the above-described at least one target, whereby positive ions are emitted from the above-described at least one target; and (b) a step of applying a negative bias voltage to the diamond-coated body which is disposed in the arc-type ion plating device, whereby the surface of the diamond coating is bombarded with the positive Lions, so as to be smoothed by the bombardment of the positive ions against the surface of the diamond coating.Type: GrantFiled: August 13, 2001Date of Patent: February 11, 2003Assignee: OSG CorporationInventors: Masatoshi Sakurai, Hiroaki Sugita
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Patent number: 6514573Abstract: A method for reducing crazing in a plastics material characterised in that it comprises the steps of: (1) cleaning the surface of the material; and (2) exposing the cleaned surface to plasma of a monomer vapour so as to produce a substantially non-oxidising plasma polymer coating on the surface.Type: GrantFiled: March 25, 1999Date of Patent: February 4, 2003Assignee: Commonwealth Scientific and Industrial Research OrganisationInventors: Jonathan Howard Hodgkin, Hans Jorg Griesser, Thomas Reinhold Gengenbach
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Publication number: 20030017344Abstract: A corrosion and ultraviolet ray resistant composite coated article (46) for use in or to contain electrical equipment is made by first cleaning an uncoated article (10) at a cleaning station (14), and then successively passing the cleaned article through wash workstation (16) phosphate bond coating workstation (18), wash workstation (22), non-chrome sealant coating workstation (24), drying workstation (26), heating workstation (30), epoxy resin coating workstation (34), and exterior painting workstation (40) by any type of transport system (12, 36), where the epoxy coated article can be passed again through previous workstations (14, 16, 18, 22, 24, 26, 30, 34) before final painting at workstation (40).Type: ApplicationFiled: July 18, 2001Publication date: January 23, 2003Applicant: Eaton CorporationInventors: Scott E. Remmert, Douglas L. Ketterer
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Patent number: 6506459Abstract: A process for removing contaminants from the surface of a substrate comprises contacting the substrate with a cleaning composition comprising at least one mono-, di-, or trialkoxy-substituted perfluoroalkane, perfluorocycloalkane, perfluorocycloalkyl-containing perfluoroalkane, or perfluorocycloalkylene-containing perfluoroalkane compound, the compound optionally containing additional catenary heteroatoms. The compounds exhibit good solvency properties while being environmentally acceptable.Type: GrantFiled: December 20, 2001Date of Patent: January 14, 2003Assignee: 3M Innovative Properties CompanyInventors: Richard M. Flynn, Mark W. Grenfell, George G. I. Moore, John G. Owens
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Patent number: 6506457Abstract: The present methods provide an amorphous, conformal, protective, abrasion-resistant, lubricious fluoropolymer coating on to a polymer substrate via a gas plasma deposition method. The coating method, according to one embodiment of the method, involves generating a gas plasma by introducing a mixture of a fluorinated gas monomer and a hydrocarbon gas into an energetic ion field, such as an ion beam or the field produced by a radio-frequency source. The fluorinated gas monomer is selected from the group consisting of CF.sub.4, C.sub.2 F.sub.4, C.sub.2 F.sub.6, CF.sub.3.sub.2CO, CH.sub.2 CF.sub.2 and mixtures of the foregoing. The hydrocarbon gas is selected from the group consisting of C.sub.2 H.sub.2, C.sub.2 H.sub.4, C.sub.2 H.sub.6, and H.sub.2 and mixtures of the foregoing. The polymer substrate is exposed to the foregoing gas plasma for sufficient time to achieve the desired coating thickness.Type: GrantFiled: March 30, 2001Date of Patent: January 14, 2003Assignee: Cardiac Pacemakers, Inc.Inventor: Larry L. Hum
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Patent number: 6503989Abstract: A monolayer polyolefin-based printable article includes 0.1 to 5% by weight of at least one polyaminoalkylene, and is characterized in that it has been treated by means of an oxidative surface treatment, such as a corona treatment. A process for the manufacture of a polyolefin-based printable article, according to which at least one surface region of the article, including at least one polyolefin and from 0.1 to 5% by weight of at least one polyaminoalkylene, involves subjecting the region to an oxidative surface treatment. A printing process, according to which a polyolefin-based article, including from 0.1 to 5% by weight of at least one polyaminoalkylene and treated by means of an oxidative surface treatment, utilizes an electrophotography technique to print on the article.Type: GrantFiled: July 24, 2000Date of Patent: January 7, 2003Assignee: Solvay (Societe Anonyme)Inventor: Zdenek Hruska
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Patent number: 6500040Abstract: A method for cleansing the phosphor screen of a display device comprising the removal of oxygen or sulfur from the surface of the phosphor, and/or its associated binder material, to a depth that prevents oxygen diffusion from the phosphor and/or binder, thereby creating an oxygen deficient surface on the phosphors.Type: GrantFiled: February 13, 2001Date of Patent: December 31, 2002Assignee: Micron Technology, Inc.Inventors: Jim J. Browning, Zhongyi Xia, David A. Cathey, Surjit S. Chadha
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Patent number: 6495457Abstract: A chemical vapor deposition method of providing a layer of material atop a semiconductor wafer using an organic precursor includes, a) positioning a wafer within a chemical vapor deposition reactor; b) injecting an organic precursor to within the reactor having the wafer positioned therein, and maintaining the reactor at a temperature and a pressure which in combination are effective to deposit a first layer of material onto the wafer which incorporates carbon from the organic precursor; and c) after depositing the first layer, ceasing to inject the organic precursor into the reactor and injecting a component gas into the reactor and generating a plasma within the reactor against the first layer, the component gas and plasma generated therefrom having a component which is effective when in an activated state to interact with a component of the deposited first layer to remove carbon from the first layer and produce gaseous products which are expelled from the reactor.Type: GrantFiled: July 20, 2001Date of Patent: December 17, 2002Assignee: Micron Technology, Inc.Inventor: Gurtej S. Sandhu
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Patent number: 6491800Abstract: The application of gas cluster ion beam (GCIB) technology in order to modify the surface of a surgical implant such as the components of an artificial hip joint, thereby substantially reducing wear debris and osteolysis complications is disclosed. The approach of the surface modification comprises an atomic level surface smoothing utilizing GCIB to super smooth the femoral heads and/or the surfaces of the acetabular cups to reduce frictional wear at the interface of the bearing surfaces. A reduction in polyethylene debris and metal debris by GCIB smoothing on one or both bearing surfaces of a surgical implant reduces osteolysis, results in a substantial cost savings to the healthcare system, and reduces patient pain and suffering.Type: GrantFiled: July 9, 2001Date of Patent: December 10, 2002Assignee: Epion CorporationInventors: Allen R. Kirkpatrick, Vincent DiFilippo
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Patent number: 6478933Abstract: A process for increasing the lubrication of ductile-iron lubricated contacts includes abrasive-blasting and plasma etching a ductile-iron component prior to coating. A wear resistant or low friction coating is then formed on the iron substrate and the resulting coated component has greater lubrication than a corresponding non-blasted and non-coated component.Type: GrantFiled: December 17, 1999Date of Patent: November 12, 2002Assignee: Caterpillar Inc.Inventors: Chuong Q. Dam, Robert E. Hawbaker
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Publication number: 20020164435Abstract: This method of prevention of particle pollution in a pre-clean chamber includes an oxygen gas supplying step for injecting oxygen gas into the pre-clean chamber; and a plasma generating step for ionizing the oxygen gas into plasma so as to interact with silicon-rich oxide to form a silicon oxide layer in the pre-clean chamber. The method according to the invention could prevent particle pollution due to peeling-off of silicon-rich oxide in a pre-clean chamber so as to prolong the life of a bell-jar therein.Type: ApplicationFiled: May 4, 2001Publication date: November 7, 2002Inventors: Chia-ming Kuo, Chao-yuan Huang
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Publication number: 20020164422Abstract: The invention is based on a method for coating at least one wiper blade element (10) made of an elastomer material, in which first, the surface of the wiper blade element (10) is cleaned and activated by means of a plasma, and then in a CVD process, a coating material is brought into a plasma state and at least one protective coating (64) forms on the surface of the wiper blade element (10), where a high-frequency voltage is applied to the region of the wiper blade element (10) oriented away from the protective layer (64) by means of an electrode (56).Type: ApplicationFiled: June 4, 2002Publication date: November 7, 2002Inventors: Kurt Burger, Guenter Schneider, Klaus Burghoff, Thomas Weber, Jeanne Forget-Funk
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Patent number: 6475928Abstract: The process comprises the following steps: a) pretreatment of a surface of the substrate by means of a cold gas plasma at low or medium pressure in order to clean the said surface; b) growth, from the said cleaned surface of the substrate, of a nitride barrier layer by means of a cold gas plasma made up of an N2/H2 mixture at low or medium pressure; and c) deposition, on the nitride barrier layer, of a Ta2O5 dielectric layer by chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD).Type: GrantFiled: July 15, 1998Date of Patent: November 5, 2002Assignee: France TelecomInventors: Marc Berenguer, Roderick Devine
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Patent number: 6472062Abstract: An improved non-sticking diamond-like nanocomposition includes networks of a-C:H and a-Si:O, wherein the H-concentration is between 85% and 125% of the C-concentration. The composition includes preferably 25 to 35 at % of C, 30 to 40 at % of H, 25 to 30 at % of Si, and 10 to 15 at % of O.Type: GrantFiled: December 20, 1999Date of Patent: October 29, 2002Assignee: N.V. Bekaert S.A.Inventors: Dominique Neerinck, Peter Persoone, Marc Sercu
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Publication number: 20020150695Abstract: A method of maintaining a plasma electrode and a substrate holder in a deposition chamber of a plasma enhanced chemical vapor deposition system is provdied. Each of the plasma electrode and the substrate holder comprises an aluminum-based material coated with an alumina protection film. The method comprises the steps of: after a plasma enhanced chemical vapor deposition process is carried out to a substrate, taking out the substrate from the deposition chamber; introducing a reaction gas into the deposition chamber; causing a reaction of the reaction gas for cleaning an inner wall of the deposition chamber; introducing an oxygen-containing gas into the deposition chamber; and generating an oxygen-containing gas plasma to form the alumina protection film on surfaces of the plasma electrode and the substrate holder.Type: ApplicationFiled: April 8, 2002Publication date: October 17, 2002Applicant: NEC CORPORATIONInventor: Shinichi Kodama
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Patent number: 6465051Abstract: The invention is embodied in a method of cleaning a plasma reactor by creating a vacuum in the chamber while introducing an etchant gas into the chamber through the gas injection ports, and applying RF energy to a ceiling electrode in the chamber while not necessarily applying RF energy to the coil antenna, so as to strike a predominantly capacitively coupled plasma in the vacuum chamber. In another embodiment the method includes, whenever the reactor is to be operated in an inductive coupling mode, applying RF power to the reactors coil antenna while grounding the ceiling electrode, and whenever the reactor is to be operated in a capacitive coupling mode, applying RF power to the ceiling electrode, and whenever the reactor is to be cleaned, cleaning the reactor by applying RF power to the ceiling electrode and to the coil antenna while introducing an etchant gas into the vacuum chamber.Type: GrantFiled: November 18, 1996Date of Patent: October 15, 2002Assignee: Applied Materials, Inc.Inventors: Turgut Sahin, Fred C. Redeker, Romuald Nowak, Shijian Li, Timothy Dyer, Derek R. Witty
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Patent number: 6458430Abstract: A method for use with a plasma immersion ion implantations systems wherein a substrate W having a patterned photoresist P thereon is implanted. The method includes ionizing a first gas in a chamber 12 to produce electrically inactive ions and reacting the electrically active ions with the photoresist P to produce outgassing 64. The outgassed material 64 is continuously evacuated until outgassing is substantially completed. The method further includes ionizing a second gas to produce electrically active ions and implanting a positively charged species of the electrically active ions into the substrate. Also disclosed is a method for curing the photoresist prior to ion implantation. A gas is ionized in the chamber 12 to produce positively and electrons. The electrons are first attracted to a substrate in the chamber having patterned photoresist P thereon for hardening the photoresist. The positively charged ions are then implanted into substrate W wherein photoresist outgassing is substantially prevented.Type: GrantFiled: December 22, 1999Date of Patent: October 1, 2002Assignee: Axcelis Technologies, Inc.Inventors: James D. Bernstein, Peter L. Kellerman, Alec S. Denholm
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Patent number: 6458700Abstract: The invention comprises integrated circuitry fabrication methods of making a conductive electrical connection, methods of forming a capacitor and an electrical connection thereto, methods of forming DRAM circuitry, integrated circuitry, and DRAM integrated circuitry. In one implementation, an integrated circuitry fabrication method of making a conductive electrical connection includes forming a conductive layer including a conductive metal oxide over a substrate. The conductive layer has an outer surface. At least a portion of the conductive layer outer surface is exposed to reducing conditions effective to reduce at least an outermost portion of the metal oxide of the conductive layer, most preferably by removing oxygen. Conductive material is formed over the reduced outermost portion and in electrical connection therewith. In one implementation, integrated circuitry includes a conductive metal oxide comprising layer received over a substrate.Type: GrantFiled: October 25, 2000Date of Patent: October 1, 2002Assignee: Micron Technology, Inc.Inventor: Howard E. Rhodes
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Patent number: 6454954Abstract: Disclosed are methods for replenishing adhesion promoting baths from an unstable state without discarding the bath. Methods of adhesion promoting substrates, such as printed wiring boards, using the replenished baths are also disclosed.Type: GrantFiled: May 22, 2000Date of Patent: September 24, 2002Assignee: Shipley Company, L.L.C.Inventors: Wanda Darlene Brewster, Tuan Hoang Ho
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Publication number: 20020132061Abstract: The present invention relates to a process for producing a porous layer adhering to a substrate, which comprises the steps:Type: ApplicationFiled: March 14, 2002Publication date: September 19, 2002Inventor: Recai Sezi