Inorganic Carbon Containing Coating Material, Not As Steel (e.g., Carbide, Etc.) Patents (Class 427/577)
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Publication number: 20110046026Abstract: A method of making at least one nanographene layer is disclosed herein. The method includes selecting X hydrocarbon precursor and Y hydrogen gas (H2) such that a ratio of X/Y ranges from 0.5 to 1, the hydrocarbon precursor including at least one of CH4, C2H2 or C3H8. The method further includes submitting the hydrocarbon precursor to chemical vapor deposition using the hydrogen gas and argon gas (Ar). As a result, i) the hydrocarbon precursor reacts with the hydrogen gas and argon gas (Ar) according to the following reaction: X hydrocarbon precursor+YH2+ZAr?2X graphene+(Y+2X)H2+ZAr, where Z ranges from 5*(X+Y) to 10*(X+Y), and ii) the hydrocarbon precursor decomposes and self-assembles to form the at least one nanographene layer.Type: ApplicationFiled: August 18, 2009Publication date: February 24, 2011Applicant: GM GLOBAL TECHNOLOGY OPERATIONS, INC.Inventors: Xingcheng Xiao, Jean M. Dasch, Simon Chin-Yu Tung, Anil K. Sachdev
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Publication number: 20110045207Abstract: To improve the crystallinity of carbon nanowalls. The method of the invention for producing carbon nanowalls, includes forming carbon nanowalls on a surface of a base in a plasma atmosphere containing hydrogen and a raw material containing at least carbon and fluorine as its constituent elements, oxygen plasma is added to the plasma atmosphere. The hydrogen plasma was generated through injecting, to the plasma generation site, hydrogen radicals generated at a site different from the plasma atmosphere. The raw material is at least one member selected from among C2F6, CF4, and CHF3.Type: ApplicationFiled: March 24, 2008Publication date: February 24, 2011Inventors: Masaru Hori, Mineo Hiramatsu, Hioryuki Kano
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Patent number: 7887889Abstract: The application discloses articles and methods of plasma fluorination treatment that employ a capacitively-coupled system to fluorinate porous articles. The methods include placing the article to be treated within an ion sheath adjacent to an electrode and placing the article to be treated between powered and grounded electrodes separated by about 25 mm or less.Type: GrantFiled: November 13, 2002Date of Patent: February 15, 2011Assignee: 3M Innovative Properties CompanyInventors: Moses M. David, Gina M. Buccellato, John S. Huberty, Seth M. Kirk
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Patent number: 7887628Abstract: A layer of single crystal CVD diamond of high quality having a thickness greater than 2 mm. Also provided is a method of producing such a CVD diamond layer.Type: GrantFiled: March 5, 2007Date of Patent: February 15, 2011Assignee: Element Six Technologies (Pty) LtdInventors: Geoffrey Alan Scarsbrook, Philip Maurice Martineau, Barbel Susanne Charlotte Dorn, Michael Andrew Cooper, John Lloyd Collins, Andrew John Whitehead, Daniel James Twitchen, Ricardo Simon Sussman
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Publication number: 20110033365Abstract: This invention provides a process and apparatus for producing a carbonaceous film such as a DLC film using a solid raw material without the need to supply a high energy radiation such as a laser beam. The process comprises providing a solid organic material as a raw material, applying a discharge energy to the material to form plasma, and depositing the plasma onto a base material to form a carbonaceous film. This process is preferably carried out by using a film production apparatus (1) comprising discharge means (10). The discharge means (10) comprises a pair of electrodes (a raw material holder) (12, 14) for holding a raw material (50) and voltage applying means (20) for applying voltage across the electrodes.Type: ApplicationFiled: December 7, 2007Publication date: February 10, 2011Applicants: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, THE UNIVERSITY OF TOKYOInventors: Hiroyuki Kousaka, Hiroyuki Koizumi, Eri Hamajima, Noritsugu Umehara, Yoshihiro Arakawa
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Publication number: 20110026187Abstract: The present invention provides an improved electrostatic chuck for a substrate processing system. The electrostatic chuck comprising a main body having a top surface configured to support the substrate, a power supply to apply a voltage to the main body and a sealing ring disposed between the main body and the substrate wherein the sealing ring has a conductive layer.Type: ApplicationFiled: January 19, 2010Publication date: February 3, 2011Inventor: Glyn J. Reynolds
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Patent number: 7879412Abstract: A diamond thin film coating method is provided that enables, with no need for an intermediate layer, the formation of a diamond thin film, which has conventionally been considered difficult because cobalt contained in a binding phase of a cemented carbide provides a catalysis for the formation of graphite. Cobalt in a binding phase (11) present in a surface of a cemented carbide substrate member comprised of a hard phase of a carbide (2) and a binding phase (1) containing cobalt, is silicidated into silicide (3), and thereafter the diamond thin film is formed.Type: GrantFiled: June 10, 2005Date of Patent: February 1, 2011Assignees: The University of Electro-Communications, Campus Create Co., Ltd.Inventor: Hideo Isshiki
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Patent number: 7875323Abstract: In a method of manufacturing a substrate and a method of manufacturing a liquid crystal display panel, a conductive is formed on a base substrate, and a buffer layer is formed on the base substrate having the conductive layer. The buffer layer includes a polymer-like carbon thin film. An alignment layer is formed on the buffer layer. The alignment layer includes a diamond-like carbon thin film containing fluorine. A content of hydrogen in the polymer-like carbon thin film is more than that in the diamond-like carbon thin film.Type: GrantFiled: July 21, 2008Date of Patent: January 25, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Soon-Joon Rho, Hong-Koo Baik
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Patent number: 7875315Abstract: This disclosure relates generally to polymeric networks of fullerene compounds, to methods of preparing precursors for such networks, and to their subsequent use as low dielectric constant materials in microelectronic devices.Type: GrantFiled: May 31, 2007Date of Patent: January 25, 2011Assignee: Roskilde Semiconductor LLCInventor: Michael Raymond Ayers
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Patent number: 7867579Abstract: The present invention provides a method for forming a carbon protective film and a method for producing a magnetic recording medium, that decreases the generation of particles in a plasma CVD apparatus thereby improving flatness of the surface of a carbon protective film, and also can manufacture a magnetic recording medium having high recording density and excellent recording/reproducing characteristics; a magnetic recording medium; and a magnetic recording/reproducing apparatus using the magnetic recording medium.Type: GrantFiled: January 10, 2008Date of Patent: January 11, 2011Assignee: Showa Denko K.K.Inventor: Hiroyuki Machida
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Publication number: 20100323276Abstract: A flow field plate having a low resistance coating for fuel cell applications is described. In one embodiment, the flow field plate includes a metal plate having a first surface and a second surface, the first surface defining a plurality of channels for directing flow of a first gaseous composition; and an activated carbon coating disposed adjacent to at least a portion of the plate, the activated carbon coating having a surface resistance of less than about 20 m?·cm2, the surface resistance being stable. Fuel cells incorporating the flow field plates and methods of making the flow field plates are also described.Type: ApplicationFiled: August 23, 2010Publication date: December 23, 2010Applicant: GM GLOBAL TECHNOLOGY OPERATIONS, INC.Inventors: Gayatri Vyas Dadheech, Mahmoud H. Abd Elhamid
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Publication number: 20100310863Abstract: A transparent electroconductive film includes a transparent substrate, at least one transparent electroconductive oxide layer deposited on the transparent substrate, and a plurality of hydrogen-containing carbon layers deposited on the transparent electroconductive oxide layer. At least one of the transparent electroconductive oxide layers contains zinc oxide. The hydrogen-containing carbon layers may be more than one, in which at least one of the hydrogen-containing carbon layers has a refractive index of 1.25 to 1.85. More preferably, the transparent electroconductive film satisfies a relationship of T1/T0?1.02 for light having a wavelength of 550 nm where T0 represents a light transmittance of the transparent substrate on which the at least one transparent electroconductive oxide layer is deposited and T1 represents a light transmittance of the transparent substrate on which the at least one transparent electroconductive oxide layer and the plurality of hydrogen-containing carbon layers are deposited.Type: ApplicationFiled: November 27, 2008Publication date: December 9, 2010Applicant: Kaneka CorporationInventors: Takashi Kuchiyama, Kenji Yamamoto, Mitsuru Ichikawa, Kozo Kondo
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Patent number: 7846512Abstract: A method for producing patterns in a polymer layer. Polymer sites are formed on a support. These sites are subjected to a plasma deposition of dielectric material and preferably react with this plasma so as to form openings at the level of said sites. A pattern structure is then formed in the dielectric material and/or in the polymer.Type: GrantFiled: April 30, 2008Date of Patent: December 7, 2010Assignee: Commissariat a l'Energie AtomiqueInventors: Frédéric-Xavier Gaillard, Laurent Vandroux
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Publication number: 20100304047Abstract: This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.Type: ApplicationFiled: June 2, 2009Publication date: December 2, 2010Applicants: Air Products and Chemicals, Inc., Tokyo Electron LimitedInventors: Liu Yang, Xinjian Lei, Bing Han, Manchao Xiao, Eugene Joseph Karwacki, JR., Kazuhide Hasebe, Masanobu Matsunaga, Masato Yonezawa, Hansong Cheng
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Patent number: 7842356Abstract: Substrate processing methods involve forming an insulating film of amorphous carbon on a substrate by supplying acetylene gas and hydrogen gas with a volume ratio of 4:3 to 4:1, or alternatively, butyne gas, into a process vessel in which the substrate is accommodated. The methods further involve generating a plasma inside of the process vessel by emitting a microwave. The pressure inside of the process vessel is maintained to be 4.0 Pa or less and the substrate is maintained to be 200° C. or less while the insulating film is formed.Type: GrantFiled: June 15, 2006Date of Patent: November 30, 2010Assignee: Tokyo Electron LimitedInventor: Hiraku Ishikawa
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Publication number: 20100297435Abstract: Nanotubes and related nanofabrication processes are described where wafer-scale approaches have been developed. The described processes can be used to produce single, vertically aligned tubes integrated into 3D nano-scale architectures. Moreover, fabrication processes to generate 3D nanoarchitectures are also described.Type: ApplicationFiled: January 26, 2010Publication date: November 25, 2010Inventors: Anupama B. KAUL, Krikor G. Megerian, Paul A. Von Allmen, Richard L. Baron
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Publication number: 20100291320Abstract: When treating workpiece or substrate surfaces with the help of a vacuum plasma discharge between an anode and an cathode and whereby due to such treatment a solid is formed and deposited on the anode surface, which solid has a higher specific DC impedance than the specific DC impedance of the anode material, at least parts of the anode surface are shielded from such deposition by establishing thereat a shielding plasma.Type: ApplicationFiled: November 1, 2007Publication date: November 18, 2010Applicant: OERLIKON TRADING AG, TRUBBACHInventors: Juergen Ramm, Beno Widrig, Denis Kurapov
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Patent number: 7833626Abstract: An amorphous carbon film includes carbon as a major component, and silicon in an amount of from 0.1 atomic % or more to 10 atomic % or less when the entire amorphous carbon film is taken as 100 atomic %. The carbon is composed of carbon having an sp2 hybrid orbital in an amount of from 60 atomic % or more to 90 atomic % or less when the entire carbon amount is taken as 100 atomic %. Also disclosed is a process for producing the amorphous carbon film.Type: GrantFiled: November 24, 2005Date of Patent: November 16, 2010Assignee: Kabushiki Kaisha Toyota Chuo KenkyushoInventors: Takashi Iseki, Hideo Tachikawa, Hiroyuki Mori, Kazuyuki Nakanishi, Munehisa Matsui, Shintaro Igarashi, Fumio Shimizu, Yoshinari Tsuchiya, Tadashi Oshima
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Patent number: 7824733Abstract: A process for producing a wear-resistant coating and to a wear-resistant coating on predetermined surfaces (2) of machine or engine parts (1) consisting of a sintered material which are exposed to frictional wear, for fuel feed units in particular, comprising at least one metal-free amorphous hydrocarbon layer (5) with sp2- and sp3-hybridized carbon applied to the predetermined surface (2) of the machine or engine part (I) for reducing friction and increasing the wear resistance of the predetermined surface (2) of the machine or engine part (1), and at least one intermediate layer of a metal-containing hydrocarbon layer formed between the predetermined surface of the machine or engine part and the amorphous hydrocarbon layer wherein the metal is a combination of W, Ti, Hf and Ge.Type: GrantFiled: July 23, 2008Date of Patent: November 2, 2010Assignee: Schaeffler KGInventors: Tim Matthias Hosenfeldt, Martin Kramer, Alexander Freiburg
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Patent number: 7824159Abstract: What disclosed is to form an abrasive coating having abrasiveness at a blade pressure side of a deposition layer using a second electrode composed of a second molded body molded from a mixed powder including a powder of a metal and a powder of a ceramic or the second electrode processed with a heat treatment, generating pulsing electric discharges between the blade pressure side of the deposition layer and the second electrode in an electrically insulating liquid or gas, and welding a material of the second electrode or a reacting substance of the material of the second electrode on the blade pressure side of the deposition layer by means of energy of the electric discharges.Type: GrantFiled: January 14, 2005Date of Patent: November 2, 2010Assignees: Ishikawajima-Harima Heavy Industries Co., Ltd., Mitsubishi Denki Kabushiki KaishaInventors: Hiroyuki Ochiai, Mitsutoshi Watanabe, Akihiro Goto, Masao Akiyoshi
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Publication number: 20100266419Abstract: The object of the invention is an engine component for arrangement in the gas flow of a gas turbine. According to the invention, at least one part of the surface of said component subjected to the gas flow in operation comprises a modified amorphous carbon layer containing hydrogen that is applied using a vacuum coating technique.Type: ApplicationFiled: August 29, 2008Publication date: October 21, 2010Applicant: LUFTHANSA TECHNIK AGInventors: Ulf Reinmöller, Christian Siry
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Publication number: 20100258526Abstract: In a method of forming an ACL, a substrate is provided in a deposition chamber. A plasma deposition process is performed by providing a deposition gas into the deposition chamber to form the ACL on the substrate. The deposition gas includes a deposition source gas, a carrier gas and a control gas. The deposition source gas includes a hydrocarbon, and the control gas includes at least one of oxygen and oxycarbon.Type: ApplicationFiled: April 5, 2010Publication date: October 14, 2010Inventors: Jaihyung Won, Jin-Hyung Park, Jeon-Sig Lim, Jae-Hyun Park, Jong-Sik Choi
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Patent number: 7803433Abstract: An amorphous carbon film forming apparatus according to the present invention is characterized by being provided with a film forming furnace 11; plural workpiece fixtures 23 for supporting plural plate-like workpieces 22 in a state that the same are piled up vertically in parallel with the interval between facing surfaces of two vertically adjoining of the plate-like workpieces 22 being in a range of 2 to 30 millimeters, the plural workpiece fixtures 23 being arranged within the film forming furnace 11 at a regular angular interval on a circle and being connected to a negative electrode; nozzles 31, 32 provided for supplying a processing gas and including at least one nozzle arranged at a center of the circle on which the plural workpiece fixtures 23 are arranged and plural nozzles arranged at a regular angular interval on another circle which surrounds the workpieces fixtures 23 radially outside thereof; and a plasma power supply connected to at least the workpiece fixtures 23.Type: GrantFiled: February 12, 2004Date of Patent: September 28, 2010Assignee: JTEKT CorporationInventors: Junji Ando, Naoyuki Sakai, Toshiyuki Saito, Kazuyuki Nakanishi, Hiroyuki Mori, Hideo Tachikawa, Kyouji Itou, Mikio Fujioka, Yoshiyuki Funaki
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Publication number: 20100239482Abstract: A method according to the invention comprises: starting plasma discharge for forming the gas barrier layer in a film deposition chamber; and producing the gas barrier layer by using a plasma after a first predetermined period of time has elapsed from a start of the plasma discharge.Type: ApplicationFiled: March 17, 2010Publication date: September 23, 2010Applicant: FUJIFILM CORPORATIONInventors: Toshiya TAKAHASHI, Kouji TONOHARA, Shinsuke TAKAHASHI
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Surface coating method for hydrophobic and superhydrophobic treatment in atmospheric pressure plasma
Publication number: 20100221452Abstract: The present invention relates to a method of coating fluorocarbon or hydrocarbon on the surface of a workpiece using atmospheric pressure plasma. More particularly, the present invention relates to a method of coating hydrocarbon or fluorocarbon on the surface of a workpiece using plasma generated under atmospheric pressure such that the workpiece can have a hydrophobic or super-hydrophobic surface.Type: ApplicationFiled: July 7, 2006Publication date: September 2, 2010Inventor: Bang-Kwon Kang -
Patent number: 7771775Abstract: A method of fabricating a medical implant component. The method may comprise producing a substrate from a first material in which the substrate has a bearing portion, and spraying particles of a second material by use of a thermal type spraying process onto at least the bearing portion of the substrate. The second material may be formed from a biocompatible material and a carbide source, in which the carbide source is 6.17% or more of the second material by weight. The biocompatible material may be cobalt chrome and the carbide source may be graphite. The thermal type spraying process may be a plasma spraying process or a high velocity oxygen fuel spraying process.Type: GrantFiled: March 26, 2007Date of Patent: August 10, 2010Assignee: Howmedica Osteonics Corp.Inventors: Daniel E. Lawrynowicz, Aiguo Wang, Zongtao Zhang
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Publication number: 20100178234Abstract: The present invention is a multilayer substrate comprising, at least, a single crystal substrate, a diamond film vapor-deposited on the single crystal substrate, wherein the single crystal substrate is a single crystal Ir or a single crystal Rh and a method for producing a multilayer substrate comprising, at least, a step of vapor-depositing a diamond film on a single crystal substrate, wherein a single crystal Ir or a single crystal Rh is used as the single crystal substrate. As a result, there is provided a multilayer substrate having a high quality single crystal diamond film with a large area and with a high crystallinity as a continuous film in which the diamond and the single crystal substrate are not broken and a method for producing the multilayer substrate at low cost.Type: ApplicationFiled: January 4, 2010Publication date: July 15, 2010Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventor: Hitoshi Noguchi
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Publication number: 20100178490Abstract: The present invention provides method and process for forming a barrier layer on a flexible substrate. The continuous roll-to-roll method includes providing a substrate to a processing chamber using at least one roller configured to guide the substrate through the processing chamber. The process includes depositing a barrier layer adjacent the substrate by exposing at least one portion of the substrate that is within the processing chamber to plasma comprising a silicon-and-carbon containing precursor gas. The present invention is further directed to a coated flexible substrates comprising a barrier layer based on the structural unit SiC:H. The barrier layer possesses high density and low porosity. Still further, the barrier layer exhibits low water vapor transmission rate (WVTR) in the range of 10?2-10?3 g.m?2d?1 and is appropriate for very low permeability applications.Type: ApplicationFiled: February 29, 2008Publication date: July 15, 2010Inventors: Glenn Cerny, Mark Loboda, Vasgen Shamamian, Steven Snow, William Weidner, Ludmil Zambov
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Patent number: 7754302Abstract: The present invention provides a plastic container or bottle having an inner wall surface coated with a DLC film which has the same level of oxygen barrier property as prior art DLC coated containers while at the same time preventing the coloration of the neck portion found in the containers of the prior art. The DLC film formed on the neck portion of the inventive bottle has a lower graphite mixing proportion than the DLC film formed on body portion, and the oxygen permeability of the container is less than or equal to 0.0050 ml/container (500 ml PET container)/day. The apparatus and the method of producing such a bottle are also described.Type: GrantFiled: May 26, 2003Date of Patent: July 13, 2010Assignee: Kirin Brewery Company, LimtedInventors: Teruyuki Yamasaki, Akira Shirakura, Hideyasu Ando
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Patent number: 7744966Abstract: A production process of magnetic recording media is provided in which, when using an oxide magnetic material as a perpendicular magnetic recording layer and forming a carbon protective layer using a plasma CVD method, stripping of the carbon protective layer and separation of a lubrication layer can be prevented, and satisfactory recording and reproduction characteristics can be obtained.Type: GrantFiled: March 16, 2006Date of Patent: June 29, 2010Assignee: Showa Denko K.K.Inventor: Masahiro Oka
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Publication number: 20100124023Abstract: A method for plating film on a heat dissipation module includes the steps of: cleaning the heat dissipation module; injecting hydrogen and tetra-methylsilane gases and applying an electric current to generate a bias electric field within a working chamber, thereby plating an adherent film on the heat dissipation module; injecting hydrocarbon gas together with the hydrogen and tetra-methylisilane gases into the working chamber, thereby plating a mixed film on the adherent film; and injecting the hydrogen and tetra-methylisilane gases together with hydrocarbon gas into the working chamber, thereby plating a noncrystalline DLC film on the mixed film.Type: ApplicationFiled: January 13, 2009Publication date: May 20, 2010Inventor: YU-HSUEH LIN
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Publication number: 20100119732Abstract: The invention relates to a hydrogenated amorphous carbon coating characterized by a substantial absence of spx hybridized CHx endgroups with x equal to 1, 2 and 3. The invention further relates to a method to deposit such a hydrogenated amorphous carbon coating on a substrate.Type: ApplicationFiled: February 5, 2008Publication date: May 13, 2010Inventors: M. Creatore, Roland Groenen, S. V. Singh, M.C.M. Van De Sanden, Kris Van Hege
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Publication number: 20100105213Abstract: An amorphous carbon film forming method is performed by using a parallel plate type plasma CVD apparatus in which an upper electrode and a lower electrode are installed within a processing chamber, and the method includes: disposing a substrate on the lower electrode; supplying carbon monoxide and an inert gas into the processing chamber; decomposing the carbon monoxide by applying a high frequency power to at least the upper electrode and generating plasma; and depositing amorphous carbon on the substrate. It is desirable that the upper electrode is a carbon electrode.Type: ApplicationFiled: February 21, 2008Publication date: April 29, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Hiraku Ishikawa, Tadakazu Murai, Eisuke Morisaki
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Publication number: 20100098884Abstract: Methods of depositing boron-containing liner layers on substrates involve the formation of a bilayer including an initiation layer which includes barrier material to inhibit the diffusion of boron from the bilayer into the underlying substrate.Type: ApplicationFiled: June 22, 2009Publication date: April 22, 2010Applicant: Applied Materials, Inc.Inventors: MIHAELA BALSEANU, Li-Qun Xia, Derek R. Witty, Yi Chen
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Patent number: 7700164Abstract: In an apparatus for fabricating a carbon coating, an object such as a magnetic recording medium is disposed on a side of an electrode connected to a high-frequency power supply. Ultrasonic vibrations are supplied to the object. Discharge is generated between the electrode connected to the high-frequency power supply and a grounded electrode to fabricate a carbon coating on the surface of the object. Also, an electrode interval is set to 6 mm or less, pressure between the electrodes is set to 15 Torr to 100 Torr, whereby high-density plasma is generated to form an ion sheath on an anode side. Therefore, a coating is fabricated on the surface of the object by bombardment of ions.Type: GrantFiled: November 2, 2004Date of Patent: April 20, 2010Assignee: Semiconductor Energy Laboratory Co., LtdInventors: Shunpei Yamazaki, Kenji Itoh, Shigenori Hayashi
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Publication number: 20100061063Abstract: A free standing film includes: i. a matrix layer having opposing surfaces, and ii. an array of nanorods, where the nanorods are oriented to pass through the matrix layer and protrude an average distance of at least 1 micrometer through one or both surfaces of the matrix layer. A method for preparing the free standing film includes (a) providing an array of nanorods on a substrate, optionally (b) infiltrating the array with a sacrificial layer, (c) infiltrating the array with a matrix layer, thereby producing an infiltrated array, optionally (d) removing the sacrificial layer without removing the matrix layer, when step (b) is present, and (e) removing the infiltrated array from the substrate to form the free standing film. The free standing film is useful as an optical filter, ACF, or TIM, depending on the type and density of nanorods selected.Type: ApplicationFiled: January 25, 2008Publication date: March 11, 2010Inventors: Carl Fairbank, Fisher Mark
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Publication number: 20100055442Abstract: A method of depositing a SiNxCy liner on a porous low thermal conductivity (low-k) substrate by plasma-enhanced atomic layer deposition (PE-ALD), which includes forming a SiNxCy liner on a surface of a low-k substrate having pores on a surface thereon, in which the low-k substrate is repeatedly exposed to a aminosilane-based precursor and a plasma selected from nitrogen, hydrogen, oxygen, helium, and combinations thereof until a thickness of the liner is obtained, and wherein the liner is prevented from penetrating inside the pores of a surface of the substrate. A porous low thermal conductivity substrate having a SiNxCy liner formed thereon by the method is also disclosed.Type: ApplicationFiled: September 3, 2008Publication date: March 4, 2010Applicant: International Business Machines CorporationInventors: Andrew J. Kellock, Hyungjun Kim, Dae-Gyu Park, Satyanarayana V. Nitta, Sampath Purushothaman, Stephen Rossnagel, Oscar Van Der Straten
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Patent number: 7662441Abstract: Disclosed is a method for manufacturing a diamond film of electronic quality at a high rate using a pulsed microwave plasma. The plasma that has a finite volume is formed near a substrate (in a vacuum chamber) by subjecting a gas containing at least hydrogen and carbon to a pulsed discharge. The pulsed discharge has a succession of low-power states and of high-power states and a peak absorbed power PC, in order to obtain carbon-containing radicals in the plasma. These carbon-containing radicals are deposited on the substrate in order to form a diamond film. Power is injected into the volume of the plasma with a peak power density of at least 100 W/cm3, while maintaining the substrate to a substrate temperature of between 700° C. and 1000 ° C.Type: GrantFiled: June 18, 2003Date of Patent: February 16, 2010Assignees: Centre National de la Recherche Scientifique - CNRS, Universite Paris Nord (Paris XII) Institut GalileeInventors: Alix Hélène Gicquel, François Silva, Xavier Duten, Khaled Hassouni, Guillaume Vincent Lombardi, Antoine Rousseau
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Publication number: 20100021695Abstract: An engraved plate which includes a substrate and an insulating layer on a surface of the substrate wherein a concave portion which increases in width toward an opening and to which the substrate is exposed is formed at the insulating layer, and an engraved plate, a substrate with conductor layer pattern manufactured by a transferring method using the engraved plate, and a conductor layer pattern are provided.Type: ApplicationFiled: December 27, 2007Publication date: January 28, 2010Inventors: Susumu Naoyuki, Hisashige Kanbara, Minoru Tosaka, Kyosuke Suzuki, Toshirou Okamura, Yoshihito Kikuhara, Masami Negishi, Tadayasu Fujieda, Kouichi Tsuyama
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Patent number: 7651741Abstract: A support that includes a flexible substrate and provided thereon, one or two or more polymer layers and one or two or more sealing layers, wherein at least one of the polymer layers and the sealing layers is formed by a process including exciting a reactive gas at a space between opposed electrodes at atmospheric pressure or approximately atmospheric pressure by electric discharge to be in the plasma state, and exposing the flexible substrate, the polymer layer or the sealing layer to the reactive gas in the plasma state.Type: GrantFiled: November 21, 2006Date of Patent: January 26, 2010Assignee: Konica CorporationInventors: Taketoshi Yamada, Hiroshi Kita
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Publication number: 20100013385Abstract: A display device free from a deterioration in luminescence efficiency is provided. In the display device of the present invention, since an inorganic film is formed after concave parts in which luminescence portions are positioned are filled with a filling film, no crack is formed in the inorganic film. Since the inorganic film is made of a material having high gas tightness and heat conductivity (such as, diamond-like carbon or AlN), water and oxygen will hardly penetrate the luminescence portions, and heat of the luminescence portions will be conducted to the inorganic film, so that the luminescence portions do not reach high temperatures. Further, since a gap between first and second panels is filled with a resin film, the atmosphere does not enter from the outside. Because the luminescence portions are free from damage from water, oxygen and heat, the display device of the present invention has a prolonged life.Type: ApplicationFiled: August 20, 2009Publication date: January 21, 2010Applicant: ULVAC, INC.Inventor: Toshio NEGISHI
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Publication number: 20100009242Abstract: Provided is a method for controlling a carbon nanowall (CNW) structure having improved corrosion resistance against high potential by varying the spacing between the carbon nanowall (CNW) walls so that its surface area and crystallinity are controlled. Also provided is a carbon nanowall (CNW) with a high surface arca and a carbon nanowall (CNW) with a high crystallinity, both of which have a controlled structure. According to the present invention, provided are: (1) a carbon nanowall, characterized by having a wall surface area of 50 cm2/cm2-substrate·?m or more; (2) a carbon nanowall, characterized by having a crystallinity such that the D band half value width in the Raman spectrum measured with an irradiation laser wavelength of 514.5 nm is 85 cm?1 or less: and (3) a carbon nanowall, characterized by having not only a wall surface area of 50 cm2/cm2-substrate·?m or more but also a crystallinity such that the D-band half value width in the Raman spectrum measured with an irradiation laser wavelength of 14.Type: ApplicationFiled: July 25, 2007Publication date: January 14, 2010Inventors: Masaru Hori, Mineo Hiramatsu, Hiroyuki Kano, Toru Sugiyama, Yuichiro Hama
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Patent number: 7645484Abstract: A method for forming a metal carbide or metal carbonitride film on a substrate using a vapor deposition process. The method includes comprises introducing a first process material, such as a film precursor, to the substrate followed by introducing a second process material, such as a film reducing agent, to the substrate, whereby plasma can be formed during the introduction of the second process material in order to assist reduction of the first process material on the substrate. Additionally, the temperature of the substrate is elevated to a value approximately equal to or greater than the decomposition temperature of the first process material in order to improve adhesion properties for the metal carbide or metal carbonitride film.Type: GrantFiled: March 31, 2006Date of Patent: January 12, 2010Assignee: Tokyo Electron LimitedInventor: Tadahiro Ishizaka
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Patent number: 7638727Abstract: Methods and apparatus for plasma-assisted heat treatments are provided. The method can include initiating a heat treating plasma within a cavity (14) by subjecting a gas to electromagnetic radiation in the presence of a plasma catalyst (70), heating the object by exposing the object to the plasma, and maintaining exposure of the object to the plasma for a sufficient period to alter at least one material property of the object.Type: GrantFiled: May 7, 2003Date of Patent: December 29, 2009Assignee: BTU International Inc.Inventors: Satyendra Kumar, Devendra Kumar, Michael L. Dougherty
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Publication number: 20090311445Abstract: A catalytic chemical vapor deposition method and apparatus for synthesizing carbon nanotubes and/or carbon nanofibers (CNTs) on a substrate involves selectively heating a catalyst for CNT synthesis on or near the surface of the substrate. Selective heating of the catalyst is achieved using inductive heating from a radio frequency source. Selective heating of the catalyst prevents heating of the substrate and enables the synthesis of CNTs on temperature sensitive substrates.Type: ApplicationFiled: August 5, 2009Publication date: December 17, 2009Applicant: CFD RESEARCH CORPORATIONInventor: Aleksey V. Vasenkov
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Publication number: 20090311444Abstract: Methods for improving coating or etching uniformity of non-conductive substrates in plasma-mediated processes generally include applying an electrically conductive coating to the non-conductive substrate prior to plasma processing. The electrically conductive coating is disposed in electrical communication with a metallic electrode of a plasma reactor. By disposing a conductive layer on the non-conductive substrate, a uniform electric potential is created during plasma processing can be built up on the non-conductive, which is equivalent to that of the metallic electrode upon which it is disposed during plasma processing.Type: ApplicationFiled: June 12, 2008Publication date: December 17, 2009Applicant: General Electric CompanyInventors: Brian Joseph Scherer, Ahmet Gun Erlat, Min Yan
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Publication number: 20090304951Abstract: A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.Type: ApplicationFiled: August 17, 2009Publication date: December 10, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Christos Dimitrios Dimitrakopoulos, Stephen McConnell Gates, Alfred Grill, Michael Wayne Lane, Eric Gerhard Liniger, Xiao Hu Liu, Son Van Nguyen, Deborah Ann Neumayer, Thomas McCarroll Shaw
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Publication number: 20090297731Abstract: A plasma CVD apparatus for forming a film on a substrate includes: an evacuatable reaction chamber; capacitively-coupled upper and lower electrodes disposed inside the reaction chamber; and an insulator for inhibiting penetration of a magnetic field of radio frequency generated during substrate processing. The insulator is placed on the bottom surface of the reaction chamber under the lower electrode.Type: ApplicationFiled: May 30, 2008Publication date: December 3, 2009Applicant: ASM JAPAN K.K.Inventor: Kamal Kishore Goundar
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Publication number: 20090297429Abstract: In one aspect, the invention relates to a method of producing high-quality diamond comprising the steps of providing a mixture comprising hydrogen, a carbon precursor, and oxygen; exposing the mixture to energy at a power sufficient to establish a plasma from the mixture; containing the plasma at a pressure sufficient to maintain the plasma; and depositing carbon-containing species from the plasma to produce diamond at a growth rate of at least about 10 ?m/hr; wherein the diamond comprises less than about 10 ppm nitrogen. The invention also relates to the apparatus, gas compositions, and plasma compositions used in connection with the methods of the invention as well as the products produced by the methods of the invention. This abstract is intended as a safety scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.Type: ApplicationFiled: December 15, 2006Publication date: December 3, 2009Inventors: Yogesh K. Vohra, Paul A. Baker
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Publication number: 20090291234Abstract: A method for depositing a thin film for a magnetic recording medium includes the steps of placing a substrate for a recording medium having a magnetic recording layer thereon on a substrate holder rotatably arranged within a film deposition chamber; and supplying a plasma beam from a plasma beam formation portion to the film deposition chamber so as to form a thin film of ta-C on the magnetic recording layer. In supplying the plasma beam, an inclination angle formed by a normal line to a surface of the magnetic recording layer and a plane orthogonal to a direction of incidence of the plasma beam is changed from a minimum inclination angle to a maximum inclination angle according to an increase in film thickness of the ta-C thin film.Type: ApplicationFiled: May 18, 2009Publication date: November 26, 2009Applicant: FUJI ELECTRIC DEVICE TECHNOLOGY CO., LTD.Inventors: Katsunori Suzuki, Takeshi Watanabe