Abstract: A method of forming an environmental resistant thermal barrier coating on a copper alloy is disclosed. The steps include cleansing a surface of a copper alloy, depositing a bond coat on the cleansed surface of the copper alloy, depositing a NiAl top coat on the bond coat and consolidating the bond coat and the NiAl top coat to form the thermal barrier coating. The bond coat may be a nickel layer or a layer composed of at least one of copper and chromium-copper alloy and either the bond coat or the NiAl top coat or both may be deposited using a low pressure or vacuum plasma spray.

Abstract: A clad plate for forming an interposer for a semiconductor device which can be manufactured at low cost and has good characteristics, an interposer for a semiconductor device, and a method of manufacturing them. Copper foil materials (19, 24, 33) forming conductive layers (10, 17, 18) and nickel plating (20, 21) forming etching stopper layers (11, 12) are formed and pressed to form a clad plate (34) for forming an interposer for a semiconductor device. Thus, a clad plate (34) for forming an interposer for a semiconductor device is manufactured. The clad plate (34) is selectively etched to form a columnar conductor (17), and an insulating layer (13) is formed on the copper foil material forming a wiring layer (10). A bump (18) for connection of a semiconductor chip and the wiring layer (10) are formed on the opposite side to the side on which the columnar conductor (17) is formed. Thus, an interposer for a semiconductor device is manufactured.

Abstract: A perpendicular exchange biased device comprises a layer of buffer material on a surface of a substrate, a layer of ferromagnetic material on a surface of the buffer layer, wherein the magnetization of the ferromagnetic layer lies in a direction perpendicular to the plane of the layer of ferromagnetic material, and a layer of antiferromagnetic material on a surface of the layer of ferromagnetic material. A method of making a perpendicular exchange biased device comprising positioning a layer of buffer material on a surface of a substrate, positioning a layer of ferromagnetic material on a surface of the layer of buffer material, wherein the magnetization of the ferromagnetic layer lies in a direction perpendicular to the plane of the layer of ferromagnetic material, and positioning a layer of antiferromagnetic material on a surface of the layer of ferromagnetic material is also included.

Abstract: An anti-ferromagnetically coupled (“AFC”), high areal density magnetic recording medium of simplified thin film layer structure and having improved thermal stability and signal-to-medium noise ratio (“SMNR”) comprises a stack of thin film layers including, in overlying sequence from a surface of a non-magnetic substrate: (a) a non-magnetic seed layer (“SDL”); (b) at least one non-magnetic underlayer (“UL”); (c) a first ferromagnetic layer (“M1”); (d) a non-magnetic spacer layer (“SPL”); and (e) a second ferromagnetic layer serving as a magnetic recording layer (“M2”); wherein: the first ferromagnetic layer (c) serves as a combined interlayer (“IL”) and “bottom” magnetic layer (“BML”) and the non-magnetic spacer layer (d) provides RKKY-type coupling between the first ferromagnetic layer (c) and the second ferromagnetic layer (e) for stabilizing the medium via anti-ferromagnetic coupling

Abstract: The present invention provides a method of producing a bonded body of a beryllium member and a copper or copper alloy member, in which the bonding strength and thermal cycle resistance property are further increased. When the beryllium member and the copper or copper alloy member are bonded to each other, a thin layer of titanium, chromium, molybdenum, or silicon is formed as a diffusion inhibition layer on the surface of the beryllium; a copper layer is formed as a bonding layer on the surface of the diffusion inhibition layer; a thin layer of aluminum or zinc is formed as a bonding promotion layer on the surface of the bonding layer; and the beryllium member and the copper or copper alloy member are diffusion bonded to each other with the intermediate layer formation side being the bonding surface.

Abstract: A method of fabricating a semiconductor device, having a reduced-oxygen Cu—Zn alloy thin film (30) electroplated on a Cu surface (20) by electroplating, using an electroplating apparatus, the Cu surface (20) in a unique chemical solution containing salts of zinc (Zn) and copper (Cu), their complexing agents, a pH adjuster, and surfactants; and annealing the electroplated Cu—Zn alloy thin film (30); and a semiconductor device thereby formed. The method controls the parameters of pH, temperature, and time in order to form a uniform reduced-oxygen Cu—Zn alloy thin film (30), having a controlled Zn content, for reducing electromigration on the Cu—Zn/Cu structure by decreasing the drift velocity therein which decreases the Cu migration rate in addition to decreasing the void formation rate, for improving device reliability, and for increasing corrosion resistance.

Abstract: A plated copper alloy material for connecting terminals is provided which comprises a parent material of copper or copper alloy, a nickel layer and a copper-tin alloy layer. The nickel layer has a thickness of 0.1-1.0 &mgr;m. The copper-tin alloy layer has a thickness of 0.1-1.0 &mgr;m and contains 35-75 at % of copper. The material may additionally have a tin layer no thicker than 0.5 &mgr;m for an engaging type terminal containing 0.001-0.1 mass % of carbon, or thicker than 0.5 &mgr;m for a non-engaging type connector. The material meets requirements for capability of insertion with a small force, good electric reliability (due to low contact resistance) in a high-temperature atmosphere, workability for sharp bending without cracking, good solder wettability and good corrosion resistance to sulfur dioxide gas.

Abstract: The present invention provides a surface treated copper foil with improved adhesion to the insulating resin of a copper-clad laminate for higher frequency applications.

Abstract: The invention provides a surface-treated copper foil which can sufficiently ensure adhesive strength with a low-dielectric substrate used in forming a printed wiring board for high-frequency applications and can minimize transmission losses. There is provided a surface-treated copper foil for a low-dielectric substrate which is used in bonded relationship to a low-dielectric substrate, which is characterized in that a nodular-treated layer constituted by bump-like copper particles is formed on a surface of the copper foil and that ultrafine copper particles are caused to precipitate on the whole surface of the nodular-treated layer and adhere thereto and the roughness value Rz of the surface is 1.0 to 6.5 &mgr;m. The surface color of the surface-treated copper foil has L* of not more than 50, a* of not more than 20 and b* of not more than 15.

Abstract: A method for electrodepositing a uniformly thick coating on a metallic mesh is provided, the method comprises the steps of: (1) providing a metallic mesh having a plurality of apertures having at least one dimension greater than nanometer scale sizes; (2) subjecting the metal mesh to a relatively fast deposition of an electrodeposited material so as to substantially uniformly coat said mesh with electrodeposited material; and (3) subjecting the product of the relatively fast deposition step to a relatively slow deposition of an electrodeposited material so as to reduce at least one dimension greater than nanometer scale size to a size of nanometer scale. Also provided are metallic meshes so prepared and spectral filters.

Abstract: An electromagnetic shielding copper foil superior in electromagnetic shielding ability, high in transmittance, and free from particle shedding comprising a copper foil on at least one surface of which a fine roughening particle layer of copper or an alloy is provided and having on the fine roughening particle layer a smoothening layer comprised of cobalt, nickel, indium, or an alloy of the same and an electromagnetic shield able to be suitably used for a PDP using the same. The fine roughening particle layer may also be a layer comprised of a fine particle roughening particle layer of copper on which a fine roughening particle layer of a copper alloy is stacked or may also be formed by a copper-cobalt-nickel alloy. The smoothening layer of the copper foil may be treated for stainproof or by a silane coupling agent to protect the surface of the copper foil.

Abstract: A highly reliable member for a semiconductor device, in which a high melting point metallizing layer, which consists mainly of a high melting point metal such as W and/or Mo, and an intervening metal layer, which has a melting point of not greater than 1,000° C. and consists mainly of at least one selected from among Ni, Cu and Fe, are provided on an AlN substrate material in this order on the AlN substrate material, and a conductor layer consisting mainly of copper is directly bonded to the intervening metal layer without intervention of a solder material layer. A semiconductor element or the like is mounted on the member for a semiconductor device, thereby fabricating a semiconductor device. The high melting point metallizing layer is formed on an aluminum nitride substrate by post-fire or co-fire metallization.

Abstract: Disclosed is a spin-valve sensor disposed between first and second gap layers and formed of one or more in-situ oxidized films. The improved spin valve sensor helps eliminate electrical shorting between the spin-valve sensor and shield layers. A fabrication method of the gap layers comprises repeatedly depositing a metallic films on a wafer in a DC-magnetron sputtering module of a sputtering system, and then transferring the wafer in a vacuum to an oxidation module where in-situ oxidation is conducted. This deposition/in-situ oxidation process is repeated until a designed thicknesses of gap layers is attained. Smaller, more sensitive spin-valve sensors may be sandwiched between thinner gap layers formed of in-situ oxidized films, thus allowing for greater recording data densities in disk drive systems.

Abstract: To control peel strength at an organic release interface between a carrier foil and a copper-microparticle layer which constitute an electrodeposited copper foil with carrier. In the present invention, (1) a barrier copper layer is formed on the release interface layer and copper microparticles are formed on the barrier layer; (2) the anti-corrosion treatment is carried out by use of a plating bath containing a single metallic component or a plurality of metallic components for forming an alloy, the plating bath(s) having a deposition potential less negative than −900 mV (vs. AgCl/Ag reference electrode); and (3) methods (1) and (2) are combined.

Abstract: Copper foil for fine pattern printed circuits having a sufficient bond strength with a resin substrate, eliminating the problems of residual copper, erosion at the bottom portions of the circuit lines, etc. at the time of formation of fine patterns, and superior in heat resistance and electrical characteristics, comprising untreated copper foil roughening treated on its surface, wherein the untreated copper foil before roughening treatment is an electrodeposited copper foil having a surface roughness in terms of 10-point average roughness Rz not more than 2.5 &mgr;m and a minimum distance between peaks of rough pyramid of at least 5 &mgr;m or having further crystal grains of an average particle size of not more than 2 &mgr;m exposed at the surface thereof, and a method of production of the same.

Abstract: A plated copper alloy material for connecting terminals is provided which comprises a parent material of copper or copper alloy, a nickel layer and a copper-tin alloy layer. The nickel layer has a thickness of 0.1-1.0 &mgr;m. The copper-tin alloy layer has a thickness of 0.1-1.0 &mgr;m and contains 35-75 at % of copper. The material may additionally have a tin layer no thicker than 0.5 &mgr;m for an engaging type terminal containing 0.001-0.1 mass % of carbon, or thicker than 0.5 &mgr;m for a non-engaging type connector. The material meets requirements for capability of insertion with a small force, good electric reliability (due to low contact resistance) in a high-temperature atmosphere, workability for sharp bending without cracking, good solder wettability and good corrosion resistance to sulfur dioxide gas.

Abstract: An ultra-thin copper foil with a carrier having a peeling layer able to withstand even high temperature working in the case of using a high heat resistant resin, enabling the carrier foil and the ultra-thin copper foil to be easily peeled apart, and reduced in the number of pinholes by uniform plating without impairing the peelability of the peeling layer, that is, an ultra-thin copper foil with a carrier comprised of a carrier foil, a peeling layer, and an ultra-thin copper foil, wherein the peeling layer and the ultra-thin copper foil are provided between them with a strike plating layer at the surface on the peeling layer side, an ultra-thin layer of copper is provided on this according to need, and an ultra-thin copper foil comprised of copper or a copper alloy or a phosphorus-containing copper or phosphorus-containing copper alloy is provided.

Abstract: A barrier coating is disclosed, containing about 15 atom % to about 95 atom % chromium; and about 5 atom % to about 60 atom % of at least one of rhenium, tungsten, and ruthenium. Nickel, cobalt, iron, and aluminum may also be present. The barrier coating can be disposed between a metal substrate (e.g., a superalloy) and an oxidation-resistant coating, preventing the substantial diffusion of various elements at elevated service temperatures. A ceramic overcoat (e.g., based on zirconia) can be applied over the oxidation-resistant coating. Related methods for applying protective coatings to metal substrates are also described.

Abstract: A method for inhibiting metal dusting corrosion of surfaces exposed to supersaturated carbon environments comprising constructing said surfaces of, or coating said surfaces with a copper based alloy. The invention is also directed to a composition resistant to metal dusting.

Abstract: In the present invention, which produces a clad sheet for a multilayered printed circuit board capable of being economically manufactured and having excellent performance, a multilayered printed circuit board using thereof and a manufacturing method thereof, a multilayered printed circuit board is manufactured by forming clad sheet for a multilayered printed circuit board 34 by laminating copper foil 19, 24, 33 which are to be formed into conductor layer 10, 17, 18 and nickel plating 20, 21 which are to be etching-stopper layer and simultaneously press-bonding both, producing a base by selectively etching clad sheet for a multilayered printed circuit board 34, forming outer conductor layer 15, 16 on the surface of the base and simultaneously making patterning, and electrically connecting among conductor layer 10, 15, 16 by interposing columnar conductor 17, 18 formed by etching copper foil 19, 24, 33 and nickel plating 20, 21.

Abstract: A soldering method achieving a high-strength joint between a solder and an nickel/gold electroless plated surface is disclosed. The nickel/gold electroless plated layer is soldered using a solder including tin (Sn), silver (Ag), and copper (Cu). At a solder joint, a layer sturcture of nickel layer/intermetallic compound layer/solder layer is formed. The intermetallic compound layer is composed mainly of tin (Sn) and copper (Cu), and further including nickel (Ni). The intermetallic compound layer has cauliflower-shaped surfaces formed in a solder-layer's side thereof.

Abstract: Disclosed is a spin-valve sensor employing one or more in-situ oxidized films as cap and/or gap layers in order to achieve an increased GMR coefficient and improved thermal stability. A fabrication method comprises depositing multilayer metallic films on a wafer in ion-beam and DC-magnetron sputtering modules of a sputtering system, and then transferring the wafer in a vacuum to an oxidation module where in-situ oxidation is conducted. When the method is used to form a cap layer, the cap layer may only be partially oxidized. A magnetic-field annealing may be subsequently conducted without the substantial occurrence of interface mixing and oxygen diffusion during the anneal process. The resulting spin-valve sensor exhibits an increased GMR coefficient, possibly due to induced specular scattering of conduction electrons and improved thermal stability mainly due to the protection of an underlying sensing layer from interface mixing and oxygen diffusion during the annealing process.

Abstract: A copper foil for chip-on-film use, a plasma display panel, or a high-frequency printed circuit board obtained by rolling copper foil to smooth the surface to give a surface area of not more than 1.30 times an ideal smooth surface, the smoothed copper foil having deposited on it fine roughening particles of Cu or alloy particles of Cu and Mo or alloy particles comprising Cu and at least one element selected among a group of Ni, Co, Fe, and Cr or a mixture of this alloy particles and oxide of at least one element selected among a group of V, Mo, and W.

Abstract: The present invention relates to a clad sheet for lead frame which can manufacture economically and has excellent characteristics, lead frame using thereof and manufacturing method thereof. A clad sheet for lead frame is manufactured by press-bonding copper foil to nickel foil at the reduction rate of 0.1 to 3%. Or, it is manufactured by press-bonding copper foil having nickel plating on one or both sides of it to the other copper foil at the reduction rate of 0.1 to 3%. Or, it is manufactured by press-bonding aluminum foil to nickel foil at the reduction rate of 0.1 to 3%. Further, it is also manufactured by press-bonding copper foil having nickel plating on one side of it to aluminum foil at the reduction rate of 0.1 to 3%. Clad sheet is comprising three layer of copper/nickel/copper or copper/nickel/aluminum.

Abstract: In a solder that realizes high-temperature-side solder bonding in temperature-hierarchical bonding, a connection portion between a semiconductor device and a substrate is formed of metal balls made of Cu or the like and compounds formed of metal balls and Sn, and the metal balls are bonded together by the compounds.

Abstract: A solder joint structure comprises a solder of a Sn alloy especially having Cu element contained therein, a contact region having a Ni layer been composed therein. In which, by means of controlling the Cu concentration to select an interface reaction product for reducing the consumption rate of the Ni layer of the contact region so as to provide an durable strength therefore.

Abstract: Electrical connectors incorporate a composite coating of molybdenum disulfide and a metal, preferably tin, for one or both of the contact surfaces of the electrical connector. The coating provides for a low coefficient of friction, low contact resistance, and good electrical conductivity, as well as good mechanical properties. The coating also reduces the insertion force of the electrical connectors, thereby increasing the number of possible terminal pairs and/or reducing terminal bending and breakage for a manually mated connector. The coating can be deposited on copper, tin-plated copper, tin alloy-plated copper or other metallic substrates, using any of several physical vapor deposition methods.

Abstract: A metal transfer sheet which is so low in peel-strength as to be transferred to an object to be transferred with ease and reliability; a producing method thereof; and a ceramic condenser producing method for producing a reliable, compact, thin-layer ceramic condenser with improved production efficiency by transferring a metal layer to the ceramic condenser by using the metal transfer sheet. After a first metal layer is formed on a carrier film in a sputtering or an electrolytic plating method, the member thus formed is dipped in plating solution and voltage is applied in such a way that the first metal layer side is anode, to form a passive film. Sequentially, with the polarity reversed, voltage is applied in such a way that the passive film side is cathode, to form the second metal layer. After this manner, a metal transfer sheet in which the first metal layer and the second metal layer are laminated through the passive film interposed therebetween is obtained.

Abstract: The object of the present invention is to provide a copper clad laminate with a copper-plated circuit layer, and a method for manufacturing a printed wiring board that excels the conventional ones in the aspect ratio of a circuit pattern when processed to a printed wiring board comprising a fine-pitch circuit. The object of the present invention is achieved by manufacturing a printed wiring board with the use of a copper clad laminate with a copper-plated circuit layer characterized by a copper-plated circuit layer and an outer-layer copper foil layer that satisfied the relationship in a case where a specific etchant is used, the R v value (Vsc/Vsp), which is the ratio of the dissolution rate (Vsp) of deposited copper that constitutes said copper-plated circuit layer to the dissolution rate (Vsc) of copper that constitutes said outer-layer copper foil layer, is 1.0 or more.

Abstract: Oxygen partial pressure may be controlled during annealing of a perovskite dielectric layer by providing an oxygen-absorbing layer adjacent the perovskite dielectric layer, and annealing the perovskite dielectric layer in an ambient that includes an ambient oxygen partial pressure, such that the oxygen-absorbing layer locally reduces the oxygen partial pressure adjacent the perovskite dielectric layer to below the ambient oxygen partial pressure. Thus, a perovskite dielectric layer can be annealed without the need to provide ultra-high vacuum and/or ultra-high purity ambient environments.

Abstract: To provide a composite material member for semiconductor device, an insulated semiconductor device and non-insulated semiconductor device using the composite material member, which are effective for obtaining a semiconductor device that alleviates thermal stress or thermal strain occurring during production or operation, has no possibilities of deformation, degeneration and rupture of each member, and is highly reliably and inexpensive. The composite material member for semiconductor device is characterized by being a composite metal plate with particles composed of cuprous oxide dispersed in a copper matrix, in which a surface of the composite metal plate is covered with a metal layer, and a copper layer with thickness of 0.5 &mgr;m or larger exists in an interface formed by the composite metal plate and the metal layer.

Abstract: For a semiconductor integrated circuit (IC) leadframe, a base metal sheet (10 in FIG. 3B) of a first metal, including copper, has substantially parallel first (11) and second (12) surfaces and an adherent layer of a second metal 13a and 13b), including nickel, covering both surfaces. A first layer (14) of a third metal, including palladium, adherent to the second metal, is pre-plated on the first surface in a thickness suitable for bonding wire attachment. On the opposite surface, a second layer (15) of the third metal is adherent to the second metal on the second surface in a thickness suitable for parts attachment. Alternatively, a layer of a fourth metal, including tin, is used for parts attachment. The leadframe structure is then stamped from the sheet so that the base metal is exposed at the stamped edges (10a in FIG. 3A). Finally, the exposed base metal is preferentially chemically etched so that it is contoured (10b) for maximum adhesion and imbued with affinity to polymeric compounds.

Abstract: An electrically conductive metal strip for the production of electrical contact components, in particular plug connectors, having a core strip made of a copper material and a metal facing, made of a copper-nickel-zinc alloy (nickel silver), roll-bonded clad on at least one side. The core strip possesses an electrical conductivity of at least 20 m&OHgr;/mm2. The combination of copper material and nickel silver as the metal facing yields a metal strip with high electrical conductivity whose mechanical surface properties correspond to those of nickel silver.

Abstract: Ni alloy or Cu alloy containing P and/or B is plated on a base metal consisting of Cu or Cu alloy as an intermediate layer, Sn or Sn alloy is further plated on the content of P or B in the plating layer is limited by carrying out reflow treatment, whereby, heat resistance and insertion and withdrawal properties are improved.

Abstract: The invention relates to the manufacture of metal foil electrodes useful in the manufacture of printed circuit boards having passive circuit components such as capacitors, resistors or inductors configured in a planar orientation. A copper foil is coated on each opposite side with a thin layer of nickel, which increases the range of functionality of the foil.

Abstract: Disclosed is a method of manufacturing an aluminium or aluminium alloy joined product, such as a shaped and hollow member, comprising the sequential steps of: (a) providing two parts made of aluminium or aluminium alloy, each part having a peripheral flange; (b) positioning the two parts such that the peripheral flange of one part faces the peripheral flange of the other part to form an assembly, and joining the facing flanges of the two parts by heating.

Abstract: The present invention is directed to provision of a surface-treated copper foil exhibiting a maximum effect of a silane coupling agent which is adsorbed onto the copper foil and is employed in order to enhance adhesion between the copper foil and a substrate during manufacture of printed wiring boards. The invention is also directed to provision of a method for producing such a copper foil. To attain these goals, a surface-treated copper foil for producing printed wiring boards is provided, wherein an anti-corrosion treatment comprises forming a zinc layer or a zinc alloy layer on a surface of the copper foil and forming an electrodeposited chromate layer on the zinc or zinc alloy layer; forming a silane-coupling-agent-adsorbed layer on the electrodeposited chromate layer without causing the electrodeposited chromate layer of the nodular-treated surface to dry; and drying.

Abstract: The purpose is to provide a surface treated copper foil and an electrodeposited copper foil with carrier to be employed for a copper clad laminate capable to be processed for simultaneous hole formation in the copper foil layer and a substrate resin layer using carbon dioxide gas laser. The purpose can be achieved by using a surface treated copper foil bearing a nickel layer or a cobalt layer with a prescribed thickness in one side of a copper foil or an electrodeposited copper foil with carrier provided with a nickel layer or a cobalt layer with a prescribed thickness between a carrier foil and an electrode posited copper foil layer. When a copper clad laminate is manufactured using these foils, the copper clad laminate is capable to be processed to easily and simultaneously form a hole in the copper foil layer and the substrate resin layer using carbon dioxide gas laser.

Abstract: The invention relates to a rigid composite metal panel comprising at least two metal parallel plates and/or sheets secured to the peaks and troughs of a corrugated aluminium stiffener sheet arranged between the parallel plates and/or sheets, wherein the corrugated aluminium stiffener sheet is an aluminium brazing sheet product made from an aluminium brazing sheet product including a core sheet (1) made of an aluminium alloy having on at least one surface of the core sheet clad, and preferably on both sides, an aluminium clad layer (2), the aluminium clad layer being made of an aluminium alloy comprising silicon in an amount in the range of 2 to 18% by weight, preferably 5 to 14%, and a layer (3) comprising nickel on the outer surface of the aluminium clad layer. The invention further relates to a method of manufacturing thereof.

Abstract: Disclosed is an aluminium brazing product, such as a brazing sheet product, having a substrate (1) of an aluminium alloy comprising silicon in an amount in the of 2 to 18% by weight, and on at least one outer surface a layer (2) comprising nickel, wherein a separately deposited layer (3) is applied on one side of the layer (2) comprising nickel and the layer (3) comprising a metal such that taken together the aluminium base substrate (1) and all layers exterior thereto form a metal filler having a liquidus temperature in the range of 490 to 570° C., and preferably in the range of 510 to 550° C. The invention also relates to a method of manufacturing such a brazing product and to a brazed assembly comprising at least one component made of the brazing sheet product.

Abstract: A plated copper alloy material for connecting terminals is provided which comprises a parent material of copper or copper alloy, a nickel layer and a copper-tin alloy layer. The nickel layer has a thickness of 0.1-1.0 &mgr;m. The copper-tin alloy layer has a thickness of 0.1-1.0 &mgr;m and contains 35-75 at % of copper. The material may additionally have a tin layer no thicker than 0.5 &mgr;m for an engaging type terminal containing 0.001-0.1 mass % of carbon, or thicker than 0.5 &mgr;m for a non-engaging type connector. The material meets requirements for capability of insertion with a small force, good electric reliability (due to low contact resistance) in a high-temperature atmosphere, workability for sharp bending without cracking, good solder wettability and good corrosion resistance to sulfur dioxide gas.

Abstract: An electromigration-resistant copper film structure and the process for forming the structure. The film structure contains a high impurity content, is resistant to grain growth, and possesses superior metallurgical, thermo-mechanical, and electrical properties. The process comprises the steps of: (a) providing a seed layer at least indirectly on a substrate, the seed layer having an exposed surface; (b) immersing the substrate in a plating solution; (c) electrodepositing a copper-containing film on the exposed surface of the seed layer, the copper-containing film having a first surface; (d) maintaining the substrate in an immersed state within the plating solution; (e) electrodepositing a further copper-containing film from the plating solution onto the first surface; (f) removing the substrate from the plating solution; and (g) drying the substrate.

Abstract: A composite material includes a structural carrier layer and a relatively thin metal foil layer separated by a release layer. The release layer, that may be an admixture of a metal such as nickel or chromium and a non-metal such as chromium oxide, nickel oxide, chromium phosphate or nickel phosphate, provides a release force for the metal foil layer from the carrier strip that is typically on the order of 0.1 pound per inch to 2 pounds per inch. This provides sufficient adhesion to prevent premature separation of the metal foil layer from the carrier layer, but easy removal of the carrier layer when desired. The metal foil layer may be electrolytically formed copper having a low height profile, on the order of 0.5 micron to 2.7 microns, bond strength enhancing agent coating a side of the metal foil layer. The enhanced surface is subsequently bonded to a dielectric and the carrier layer then removed.

Abstract: The present invention provides a method of producing a bonded body of a beryllium member and a copper or copper alloy member, in which the bonding strength and thermal cycle resistance property are further increased. When the beryllium member and the copper or copper alloy member are bonded to each other, a thin layer of titanium, chromium, molybdenum, or silicon is formed as a diffusion inhibition layer on the surface of the beryllium; a copper layer is formed as a bonding layer on the surface of the diffusion inhibition layer; a thin layer of aluminum or zinc is formed as a bonding promotion layer on the surface of the bonding layer; and the beryllium member and the copper or copper alloy member are diffusion bonded to each other with the intermediate layer formation side being the bonding surface.

Abstract: The invention includes a method of forming a heat treated sputtering target assembly. A backing plate is diffusion bonded to a sputtering target to produce a sputtering target assembly. The sputtering target assembly is heat treated to precipitation harden the backing plate of the assembly. The heat treatment includes heating and quenching, with the quenching being performed by immersing the backing plate in a quenchant without submerging the sputtering target.

Abstract: An article is coated with a multi-layer coating having a stainless steel color. The coating comprises an electroplated layer or layers on the article surface, a refractory metal or refractory metal alloy strike layer on the electroplated layer or layers, a color layer containing a refractory metal oxide or refractory metal alloy oxide having a substoichiometric oxygen content on the strike layer, and a refractory metal oxide or refractory metal alloy oxide having a substantially stoichiometric oxygen content layer on said color layer.

Abstract: An article is coated with a multi-layer decorative and protective coating having the appearance of stainless steel. The coating comprises one or more electroplated layers on the surface of said article and vapor deposited on the electroplated layers a stack layer containing layers of refractory metal or metal alloy alternating with layers containing the reaction products of refractory metal or refractory metal alloy, nitrogen and oxygen wherein the total nitrogen and oxygen content of these reaction products is from about 4 to about 32 atomic percent with the nitrogen content being at least about 3 atomic percent.

Abstract: The invention relates to the manufacture of metal foil electrodes useful in the manufacture of printed circuit boards having passive circuit components such as capacitors, resistors or inductors configured in a planar orientation. A copper foil is coated on each opposite side with a thin layer of nickel, which increases the range of functionality of the foil.

Abstract: To provide an electrodeposited copper foil with carrier, in which electrical connection holes such as through holes (PTH), interstitial via holes (IVH), and blind via holes (BVH) can be readily formed. The invention provides an electrodeposited copper foil with carrier comprising a carrier foil, an organic release interface layer formed on a surface of the carrier foil, and an electrodeposited copper foil layer deposited on the release interface layer, wherein copper microparticles are deposited on the surface of the carrier foil onto which the organic release interface layer and the electrodeposited copper layer are formed.

Abstract: A printed wiring board (PWB) and a method of manufacturing the same. In one embodiment, the PWB includes: (1) a substrate having a conductive trace located thereon and (2) a multi-purpose finish including palladium alloy where palladium is alloyed with cobalt or a platinum group metal and is located on at least a portion of the conductive trace, which forms both a non-contact finish and a contact finish for the PWB.