Abstract: A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition exhibits a high resolution and forms a negative resist pattern of a profile with minimized LER and undercut.

Abstract: A cyclic compound of the present invention has a molecular weight of 500 to 5000, and is represented by the following formula (1):

Abstract: A cyclic compound of the present invention has a molecular weight of 500 to 5000, and is represented by the following formula (1):

Abstract: A resist underlayer film forming composition for lithography includes: as a component (I), a fluorine-containing highly branched polymer obtained by polymerizing a monomer A having two or more radical polymerizable double bonds in the molecule thereof, a monomer B having a fluoroalkyl group and at least one radical polymerizable double bond in the molecule thereof, and a monomer D having a silicon atom-containing organic group and at least one radical polymerizable double bond in the molecule thereof, in the presence of a polymerization initiator C in a content of 5% by mole or more and 200% by mole or less, based on the total mole of the monomer A, the monomer B, and the monomer D; and as a component (II), a hydrolyzable silane compound, a hydrolysis product thereof, a hydrolysis-condensation product thereof, or a silicon-containing compound that is a combination of these compounds.

Abstract: A polymer is prepared from an adamantane methacrylate monomer whose alcoholic hydroxyl group is protected with an alicyclic-containing tertiary alkyl group. A photoresist composition comprising the polymer displays a high sensitivity and a high dissolution contrast during both alkaline development and organic solvent development.

Abstract: There are provided a method of forming a resist pattern in which a resist pattern is formed on top of a substrate by using a chemically amplified resist composition and conducting patterning two or more times, the method being capable of reducing the extent of damage, caused by the second patterning, imposed upon the first resist pattern that is formed by the first patterning; as well as a resist composition that is useful for forming the first resist pattern in this method of forming a resist pattern. The method includes forming of a first resist pattern using a resist composition containing a thermal base generator as a chemically amplified resist composition during first patterning, and then conducting a hard bake for baking the first resist pattern under a bake condition such that a base is generated from the thermal base generator, prior to the second patterning.

Abstract: A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units of formulae (1) and (2) and a photoacid generator of formula (3) onto a substrate, baking, exposure, PEB and developing in an organic solvent. In formulae (1) and (2), R1 is H, F, CH3 or CF3, Z is a single bond, phenylene, naphthylene, or (backbone)-C(?O)—O—Z?—, Z? is alkylene, phenylene or naphthylene, XA is an acid labile group, YL is H or a polar group. In formula (3), R2 and R3 are a monovalent hydrocarbon group, R4 is a divalent hydrocarbon group, or R2 and R3, or R2 and R4 may form a ring with the sulfur, L is a single bond or a divalent hydrocarbon group, Xa and Xb are H, F or CF3, and k is an integer of 1 to 4.

Abstract: There is provided a photosensitive resin composition containing (A) an alkali-soluble resin, (B) a compound which generates an acid when exposed to light, (C) a thermal crosslinking agent, and (D) a nitrogen-containing aromatic compound represented by the following formula (1): wherein R1 represents a hydrogen atom or a hydrocarbon group; R2 represents a hydrogen atom, an amino group or a phenyl group; and A and B each independently represent a nitrogen atom, or a carbon atom and a hydrogen atom bonded thereto.

Abstract: The purpose of the invention is to obtain an anti-counterfeiting marker sheet that is inexpensive and with which authenticity can be assessed easily. The invention uses an anti-counterfeiting marker sheet (1) characterized in being provided with a substrate (3), and multiple markers (5), which are formed directly on the substrate (3) and the contour shape of which can be recognized by magnified examination. It is preferable that: the markers are not unevenly distributed but are irregularly disposed on the substrate; there are multiple marker (5) colors; and there are multiple types of shapes for the marker (5) contour shapes. It is also preferable that the minimum radius of curvature of the corners of the shapes formed when the markers (5) are viewed in plan view is 250 nm to less than 10 ?m.

Abstract: A photoresist layer comprising a fluorinated photoresist material is formed on a device substrate and exposed to patterned radiation. The exposed photoresist layer is contacted with a developing agent to remove a portion of the exposed photoresist layer in accordance with the patterned light, thereby forming a developed structure having a first pattern of photoresist covering the substrate and a complementary second pattern of uncovered substrate corresponding to the removed portion of photoresist, the developing agent comprising a mixture of first and second fluorinated solvents, wherein at least one of the first and second solvents is a hydrofluoroether. The developed structure is treated to form a treated structure. The treated structure is contacted with a stripping agent to remove the first pattern of photoresist, the stripping agent comprising at least the first or second solvent in a concentration different from the developing agent.

Abstract: A resist composition including a base component which exhibits changed solubility in a developing solution under action of acid and an acid generator which generates acid upon exposure, the base component containing a polymeric compound containing a structural unit represented by general formula (a0-1) and the acid generator containing a compound represented by general formula (b1). In the formulae, R represents H, an alkyl group of C1 to 5 or a halogenated alkyl group of C1 to 5; Ya1 represents a single bond or a divalent linking group; La1 and La2 represents —SO2— or —C(?O)—; Ra1 represents a cyclic group which may have a substituent and the like; n1 and n2 represents 0 or 1; R11 represents a cyclic group of C5 to 30 which may have a substituent; V11 represents a single bond or an alkylene group of C1 to 6; L11 represents an ester bond; Y11 represents an alkylene group of C1 to 5 which may have a fluorine atom; m represents an integer of 1 or more; and Mm+ represents an organic cation having a valency of m.

Abstract: Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, (c) developing the exposed film with a developer containing an organic solvent, and (d) rinsing the developed film with a rinse liquid containing an organic solvent, which rinse liquid has a specific gravity larger than that of the developer.

Abstract: A pattern-forming method includes: (1) a resist underlayer film-forming step of providing a resist underlayer film on an upper face side of a substrate by coating a resist underlayer film-forming composition containing a resin having a phenolic hydroxyl group; (2) a resist pattern-forming step of forming a resist pattern on an upper face side of the resist underlayer film; (3) a pattern-forming step of dry etching at least the resist underlayer film and the substrate, with the aid of the resist pattern as a mask to form a pattern on the substrate; and (4) a resist underlayer film-removing step of removing the resist underlayer film on the substrate with a basic solution, in the order of (1) to (4).

Abstract: The present invention relates to a photoactive compound having a novel structure and a photosensitive resin composition including the same, and the photoactive compound according to the present invention has excellent sensitivity due to efficient absorption to a UV light source by including a nitro group and a phosphonate structure, and has excellent retention rate, mechanical strength, heat resistance, chemical resistance and developing resistance by improving solubility of the photosensitive resin composition by excellent compatibility of the phosphonate structure and a binder resin. Therefore, the photosensitive resin composition according to the present invention is useful to cure a column spacer, an overcoat, a passivation material and the like of a liquid crystal display device, and is useful in view of a high temperature process property.

Abstract: An aqueous solution containing 0.1-20 wt % of a benzyltrialkylammonium hydroxide is a useful developer for photosensitive resist materials. When an exposed resist film is developed in the developer, any swell of the resist film during development is suppressed. A resist pattern with minimal edge roughness can be formed while preventing pattern collapse or bridge defect formation.

Abstract: A heat-reactive resist material contains copper oxide, and silicon or silicon oxide, and is formed so that the content of silicon or silicon oxide in the heat-reactive resist material is 4.0 mol % or more less than 10.0 mol % in terms of mole of silicon. A heat-reactive resist layer is formed using the heat-reactive resist material, is exposed, and then, is developed with a developing solution. Using the obtained heat-reactive resist layer as a mask, dry etching is performed on a substrate with a fluorocarbon to manufacture a mold having a concavo-convex shape on the substrate surface. At this point, it is possible to control a fine pattern comprised of the concavo-convex shape.

Abstract: A method for patterning a substrate is described. The method includes forming a layer of radiation-sensitive material on a substrate, and preparing a pattern in the layer of radiation-sensitive material using a lithographic process, wherein the pattern is characterized by a critical dimension (CD) and a roughness. Following the preparation of the pattern in the layer of radiation-sensitive material, the method further includes performing a CD slimming process to reduce the CD to a reduced CD, and performing a vapor smoothing process to reduce the roughness to a reduced roughness.

Abstract: A method of forming a resist pattern, comprising: a step of forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits decreased solubility in an organic solvent under action of acid and an acid-generator component (B) which generates acid upon exposure; a step of subjecting the resist film to exposure; a step of patterning the resist film by a negative-tone development using a developing solution containing the organic solvent to form a resist pattern; a step of applying a coating material to the resist pattern, thereby forming a coating film; a step of performing a thermal treatment at a temperature lower than the softening point of the resist pattern, thereby heat shrinking the coating film to narrow an interval between the resist pattern; and a step of removing the coating film.

Abstract: A chemically amplified negative resist composition is provided comprising (A) a resin having a crosslinking group, (B) a crosslinker, (C) a photoacid generator capable of generating an acid upon exposure to light of wavelength 190-500 nm, (D) a solvent, and (E) an isocyanuric acid. The resist composition overcomes the stripping problem that the film is stripped from metal wirings of Cu or Al, electrodes, and SiN substrates.

Abstract: A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, PEB, and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition is based on a polymer comprising recurring units (a1) of formula (1) wherein R1 is H or CH3, R2 and R3 are H, F or a monovalent hydrocarbon group, R4 is H or a monovalent hydrocarbon group, R5 and R6 are a monovalent hydrocarbon group, X1 is a divalent hydrocarbon group, and k1=0 or 1. A fine hole or trench pattern can be formed therefrom.

Abstract: A photosensitive negative resin composition including (a) an epoxy-group-containing compound, (b) a first onium salt including a cation moiety structure represented by formula (b1) and an anion moiety structure represented by formula (b2), and (c) a second onium salt including a cation moiety structure represented by formula (c1) and an anion moiety structure represented by formula (c2).

Abstract: An opening width of a main pattern is a width with which a transcription pattern is formed on a target member to be exposed by transmitted exposure light, and is a dimension of 0.8×(?/NA)×M or less (where ? is a wavelength of the exposure light, and NA and M are a numerical aperture and a reduction ratio of a reduced projection optical system of an exposure apparatus). Each of a first auxiliary pattern adjacent to the main pattern and a second auxiliary pattern located outside the first auxiliary pattern to be adjacent thereto has a width with which a transcription pattern is not formed by the exposure light and generates diffracted light. A first distance between respective centers of the main pattern and the first auxiliary pattern is greater than a second distance between respective centers of the first auxiliary pattern and the second auxiliary pattern.

Abstract: There is provided a pattern forming method comprising (i) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a resin capable of increasing the polarity by the action of an acid to decrease the solubility for an organic solvent-containing developer, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a solvent, and (D) a resin substantially free from a fluorine atom and a silicon atom and different from the resin (A), (ii) a step of exposing the film, and (iii) a step of performing development by using an organic solvent-containing developer to form a negative pattern.

Abstract: A cyclic compound having a molecular weight of 500 to 5000 is represented by the following formula (1), wherein at least one of R0 is a monovalent group containing an iodine atom. Also disclosed are a method for producing the cyclic compound, a composition containing the cyclic compound, and a method for forming a resist pattern using the composition.

Abstract: A polyimide precursor and a polyimide precursor resin composition, the polyimide precursor having repeating units represented by formula (1) and a photosensitive resin composition comprising the polyimide precursor and a photoacid generator or photobase generator: where R1 is a tetravalent organic group; R2 is a divalent organic group; R1s may be the same or different from each other and R2s may be the same or different from each other in the repeating units; R3 and R4 respectively represent a monovalent organic group having a structure represented by formula (2) and may be the same or different from each other; and R3s and R4s in the repeating units may be the same or different from each other, respectively. R5, R6, R7 and R8 are as described in the specification.

Abstract: A resist composition contains (A) a resin having a structural unit represented by the formula (I), (B) an acid generator and (D) a compound represented by the formula (II), wherein R1, ring X1, R3, R4, m, and n are defined in the specification.

Abstract: A negative pattern forming method, includes: (i) forming a film having a film thickness of 200 nm or more from a chemical amplification resist composition containing (A) a resin capable of increasing a polarity of the resin (A) by an action of an acid to decrease a solubility of the resin (A) for a developer containing one or more organic solvents, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film with a developer containing one or more organic solvents.

Abstract: A novel method of forming a resist pattern in which thickness loss from the resist pattern is reduced, and a negative resist composition that can be used in this method of forming a resist pattern. The method of forming a resist pattern includes: forming a first resist film by applying a first resist composition to a support, forming a first resist pattern by selectively exposing the first resist film through a first mask pattern and then developing the first resist film, forming a second resist film by applying a negative resist composition containing an ether-based organic solvent (S?) having no hydroxyl groups onto the support having the first resist pattern formed thereon, and forming a resist pattern by selectively exposing the second resist film through a second mask pattern and then developing the second resist film.

Abstract: A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.

Abstract: An embodiment of the present invention provides a method of applying patterned metallization to a ceramic block comprising applying a photodefinable ink to said ceramic block; drying said ink; exposing said photodefinable ink to UV radiation through a predefined mask according to the thickness of the film to form a pattern; developing said pattern in a developer solution thereby forming a patterned ceramic block; and rinsing, drying and firing said patterned ceramic block.

Abstract: The present invention is directed to a permanent epoxy photoresist composition useful for making negative-tone, permanent photoresist relief patterns on low surface energy polymer substrates, comprising: (A) one or more epoxy resins according to Formulas I-VI, (B) one or more cationic photoinitiators; (C) one or more film casting solvents; and (D) one or more fluorinated compounds. The present invention is also directed to methods of forming a permanent photoresist relief pattern on a low surface energy polymer substrate using the disclosed composition.

Abstract: A resist composition includes a polymer that includes an acid-labile group-containing structural unit, a photoacid generator, and a solvent. The solvent includes a compound that includes a ketonic carbonyl group and an alcoholic hydroxyl group. The alcoholic hydroxyl group is preferably a tertiary alcoholic hydroxyl group. The solvent preferably further includes an alkylene glycol monoalkyl ether carboxylate.

Abstract: The present invention provides a drawing apparatus which performs drawing on a substrate with a charged particle beam, including a transmission unit including a plurality of channels and configured to transmit drawing data via the plurality of channels, a plurality of storages respectively corresponding to the plurality of channels, and configured to respectively store the drawing data transmitted via the plurality of channels, and a controller (21;14) configured to control at least either one of transmission start time and a transmission rate of the drawing data from the transmission unit with respect to each of the plurality of storages.

Abstract: [Object] To provide a top anti-reflection coating composition equal or superior to known products in film-formability, in refractive index, in temporal stability and in safety; and also to provide a pattern formation method using the same. [Means] A top anti-reflection coating composition comprising a solvent, an alkylsulfonic acid having 10 to 18 carbon atoms, and a fluorine-containing polymer having a weight average molecular weight of 300000 to 800000 and represented by the formula (1): -Ax-By- (1). In the formula (1), A is a repeating unit represented by the formula (A): (R is a fluorine-containing alkylene group having 1 to 40 carbon atoms or R is a fluorine-containing alkylene group having 2 to 100 carbon atoms and an ether bond); B is a repeating unit capable of combining with A to form a copolymer; x and y are numbers indicating the polymerization ratios, provided that x is not equal to 0; and A and B may randomly combine with each other or may form blocks.

Abstract: According to one exemplary embodiment, a method for forming a photoresist pattern on a semiconductor wafer includes forming a photoresist including an organic polymer matrix on the semiconductor wafer. The method further includes exposing the photoresist to a patterned radiation. The method further includes baking the photoresist after exposing the photoresist to the pattern radiation. The method further includes applying an oxidizing reagent to the photoresist to create the photoresist pattern corresponding to the patterned radiation.

Abstract: The present invention relates to novel antireflective coating compositions and their use in image processing. The compositions self-segregate to form hydrophobic surfaces of the novel antireflective coating compositions, the composition being situated between a reflective substrate and a photoresist coating. Such compositions are particularly useful in the fabrication of semiconductor devices by photolithographic techniques. The present invention also related to self-segregating polymers useful in image processing and processes of their use.

Abstract: A resist pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed using a developer solution including no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a polymer, a radiation-sensitive acid generator, and an acid diffusion controller which includes a compound having an amide group. The polymer has a weight average molecular weight in terms of the polystyrene equivalent of greater than 6,000 and includes a first structural unit that includes an acid-labile group. The polymer includes less than 5 mol % or 0 mol % of a second structural unit that includes a hydroxyl group.

Abstract: Acid generator compounds are provided that comprise an oxo-1,3-dioxolane moiety and/or an oxo-1,3-dioxane moiety. The acid generators are particularly useful as a photoresist composition component.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition, which is excellent in sensitivity, resolution, a pattern profile and a depth of focus (DOF), and, an actinic ray-sensitive or radiation-sensitive film and a pattern forming method, each using the same, are provided. The actinic ray-sensitive or radiation-sensitive resin composition includes a nitrogen-containing compound and a resin (Ab) capable of varying a polarity or an alkali solubility thereof by the action of an acid.

Abstract: There is disclosed a resist top coat composition, used in a patterning process onto a photoresist film, wherein a resist top coat is formed by using the resist top coat composition onto a photoresist film formed on a wafer, and then, after exposure, removal of the resist top coat and development of the photoresist film are performed to effect the patterning on the photoresist film, wherein the resist top coat composition contains a truxene compound having phenol groups shown by the following general formula (1). As a result, there is provided a resist top coat composition not only having an effect from an environment to a resist film reduced and effectively shielding an OOB light, but also reducing film loss of a resist pattern and bridging between patterns and having an effect to enhance sensitivity of the resist; and a patterning process using this.

Abstract: A radiation-sensitive composition containing a resist compound having a high sensitivity, a high resolution, a high etching resistance, and a low outgas which forms a resist pattern with good shape and a method of forming a resist pattern and novel compositions for forming a photoresist under coat film which is excellent in optical properties and etching resistance and contains substantially no sublimable substance and an under coat film formed by the composition. Radiation-sensitive composition containing a solvent and a cyclic compound having, e.g., a cyclic compound (A) having a molecular weight of 700 to 5000 which is synthesized by the condensation reaction of a compound having 2 to 59 carbon atoms and 1 to 4 formyl groups with a compound having 6 to 15 carbon atoms and 1 to 3 phenolic hydroxyl groups, and a cyclic compound for use in the radiation-sensitive composition.

Abstract: An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process.

Abstract: A resist composition includes a high-molecular weight compound having a constituent unit (a0) represented by a general formula (a0-1), an acid generator component (B) which generates an acid upon exposure, and a photodegradable base (D1) which is decomposed upon exposure to lose acid diffusion controlling properties, and a mixing ratio of the component (D1) to the component (B) is 0.5 or more in terms of a molar ratio represented by (D1)/(B). In the formula (a0-1), R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Ya01 represents a single bond or a divalent linking group; X01 represents a sulfur atom or an oxygen atom; and Ra01 represents an optionally substituted cyclic group, an optionally substituted chain alkyl group, or an optionally substituted chain alkenyl group.

Abstract: A thiosulfate polymer composition includes an electron-accepting photosensitizer component, either as a separate compound or as an attachment to the thiosulfate polymer. The thiosulfate polymer composition can be applied to various articles and used to form a predetermined polymeric pattern after photothermal reaction to form crosslinked disulfide bonds, removing non-crosslinked polymer, and reaction with a disulfide-reactive material.

Abstract: A resist composition which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of the acid contains a high-molecular weight compound (A1) having a constituent unit (a0) represented by a general formula (a0-1) and a constituent unit (a1-1) including a monocyclic group-containing acid decomposable group whose polarity increases by the action of an acid. In the formula (a0-1), R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Ya01 represents a single bond or a divalent linking group; X01 represents a sulfur atom or an oxygen atom; and Ra01 represents an optionally substituted cyclic group, chain alkyl group, or chain alkenyl group.

Abstract: Disclosed are an actinic ray-sensitive or radiation-sensitive resin composition including (A) a compound capable of generating an acid by irradiation of actinic rays or radiation, and (B) a resin of which solubility in an alkali developer increases by being decomposed by the action of an acid, and, a resist film, a pattern forming method, an electronic device manufacturing method, and an electronic device, each using the composition, wherein the actinic ray-sensitive or radiation-sensitive resin composition contains at least one type of a specific compound represented by General Formula (A-I) and at least one type of a specific compound represented by General Formula (A-II) as the compound (A).

Abstract: A thiosulfate polymer composition includes an electron-accepting photosensitizer component, either as a separate compound or as an attachment to the thiosulfate polymer. The thiosulfate polymer composition can be applied to various articles, or used to form a predetermined polymeric pattern after photothermal reaction to form crosslinked disulfide bonds, removing non-crosslinked polymer, and reaction with a disulfide-reactive material. Such thiosulfate polymer compositions can also be used to sequestering metals.

Abstract: A resist composition contains a high-molecular weight compound which has a partial structure represented by a general formula (a0-r-1) and has a constituent unit represented by a general formula (a0-1). In the formula (a0-r-1), Y1 represents a divalent linking group; each of R2 and R3 represents a group having 0 to 20 carbon atoms, which is not a fluorine atom, and either R2 or R3 may form a ring with Y1; m represents an integer of 1 or more; and Mm+ represents an m-valent organic cation. In the formula (a0-1), R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Ya01 represents a single bond or a divalent linking group; X01 represents a sulfur atom or an oxygen atom; and Ra01 represents an optionally substituted cyclic group, chain alkyl group or chain alkenyl group.

Abstract: An apparatus and a method of manufacturing a micropatterned film are disclosed. More particularly, a method for manufacturing a master mold capable of forming a micropattern on a film applied to an exterior of a household appliance, an apparatus and a method for production of a micropatterned film using the above master mold, and appliances having such micropatterned films attached thereto are disclosed. The method for manufacturing a master mold used for forming a micropatterned film applied to an exterior of a household appliance includes, applying photoresist (110) to a surface of an STS substrate (100) and UV irradating the same through a patterned mask (140) to transfer the pattern of the mask (140) to the substrate (100), etching the STS substrate (100) to which the pattern has been transferred removing the photoresist (110) from the etched STS substrate (100), and reproducing the pattern of the STS substrate on a synthetic resin substrate (210).

Abstract: Nanoscale patterns prepared by lithography are used to direct the self-assembly of amphiphilic molecules to form patterned nanosubstrates having a desired distribution of chemical functional moieties. These patterns can be fabricated over a large area and require no special limitations on the chemistry the assembled amphiphiles. Hydrophilic/hydrophobic patterns can be created and used to direct the deposition of a single functional component to specific regions of the surface or to selectively assemble polymer blends to desired sites in a one step fashion with high specificity and selectivity. The selective deposition of functional moieties on a patterned surface can be based on electrostatic forces, hydrogen bonding, or hydrophobic interactions.