Having High Dielectric Constant Insulator (e.g., Ta2o5, Etc.) Patents (Class 438/240)
  • Patent number: 10388585
    Abstract: A semiconductor device includes: a semiconductor substrate; a gate electrode on the semiconductor substrate; a SiN film on the semiconductor substrate and the gate electrode; and an oxide film on the SiN film, wherein the oxide film is an atomic layer deposition film including atomic layers alternately deposited.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: August 20, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventors: Takayuki Hisaka, Masahiro Totsuka, Tasuku Sumino
  • Patent number: 10381455
    Abstract: A diffusion barrier system may prevent migration of gold, oxygen, or both on a plurality of ohmic contacts. The diffusion barrier system may include a first barrier system or a second barrier system. Each barrier system may include a first metallization layer, a second metallization layer, and a third metallization layer.
    Type: Grant
    Filed: August 31, 2016
    Date of Patent: August 13, 2019
    Assignee: United States of America as Represented by the Administrator of National Aeronautics and Space Administration
    Inventor: Robert Okojie
  • Patent number: 10219373
    Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface. Methods include soaking a substrate surface comprising hydroxyl-terminations with a silylamine to form silyl ether-terminations and depositing a film onto a surface other than the silyl ether-terminated surface.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: February 26, 2019
    Assignee: Applied Materials, Inc.
    Inventors: David Thompson, Mark Saly, Bhaskar Jyoti Bhuyan
  • Patent number: 10134586
    Abstract: A technique includes forming a laminated film on a substrate by performing a cycle a predetermined number of times. The cycle includes forming a first film which contains at least a predetermined element and oxygen, and forming a second film which contains at least the predetermined element, oxygen and carbon. The first film and the second film are laminated to form the laminated film.
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: November 20, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Takafumi Nitta, Satoshi Shimamoto, Yoshiro Hirose
  • Patent number: 10103026
    Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.
    Type: Grant
    Filed: August 3, 2016
    Date of Patent: October 16, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sun-min Moon, Youn-soo Kim, Han-jin Lim, Yong-jae Lee, Se-hoon Oh, Hyun-jun Kim, Jin-sun Lee
  • Patent number: 9916980
    Abstract: A method of forming a layer on a substrate is provided by providing the substrate with a hardmask material. The hardmask material is infiltrated with infiltration material during N infiltration cycles by: a) providing a first precursor to the hardmask material on the substrate in the reaction chamber for a first period T1; b) removing a portion of the first precursor for a second period T2; and, c) providing a second precursor to the hardmask material on the substrate for a third period T3, allowing the first and second precursor to react with each other forming the infiltration material.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: March 13, 2018
    Assignee: ASM IP Holding B.V.
    Inventors: Werner Knaepen, Jan Willem Maes, Bert Jongbloed, Krzysztof Kamil Kachel, Dieter Pierreux, David Kurt De Roest
  • Patent number: 9899209
    Abstract: An electrically conductive thin film including a plurality of nanosheets including a doped titanium oxide represented by Chemical Formula 1 and having a layered crystal structure: (A?Ti1??)O2+???Chemical Formula 1 wherein, in Chemical Formula 1, ? is greater than 0, A is at least one dopant metal selected from Nb, Ta, V, W, Cr, and Mo, and ? is greater than 0 and less than 1. Also, an electronic device including the electrically conductive thin film.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: February 20, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Doh Won Jung, Hee Jung Park, Yoon Chul Son, Yun Sung Woo, Jongmin Lee, Yong Hee Cho, Kyoung-Seok Moon, Jae-Young Choi, Kimoon Lee
  • Patent number: 9647208
    Abstract: Low voltage embedded memory having conductive oxide and electrode stacks is described. For example, a material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer.
    Type: Grant
    Filed: November 24, 2015
    Date of Patent: May 9, 2017
    Assignee: Intel Corporation
    Inventors: Elijah V. Karpov, Brian S. Doyle, Charles C. Kuo, Robert S. Chau, Eric R. Dickey, Michael Stephen Bowen, Sey-Shing Sun
  • Patent number: 9559300
    Abstract: In accordance with an embodiment, a resistive random access memory device includes a substrate, first and second wiring lines, and a storage cell. The first and second wiring lines are disposed on the substrate so as to intersect each other. The storage cell is disposed between the first and second wiring lines at the intersection of the first and second wiring lines and includes a first electrode, a resistive switching film on the first electrode, a second electrode on the resistive switching film, and a tantalum oxide (TaOx) layer. The first electrode is electrically connected to the first wiring line. The second electrode is electrically connected to the second wiring line. The tantalum oxide (TaOx) layer is disposed between the first electrode and the resistive switching film and is in contact with the resistive switching film.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: January 31, 2017
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hiroyuki Ode, Takeshi Yamaguchi, Takeshi Takagi, Toshiharu Tanaka, Masaki Yamato
  • Patent number: 9484419
    Abstract: Provided are an oxide thin film, a method for post-treating an oxide thin film and an electronic apparatus. An oxide thin film is an oxide thin film with a single layer including a metal oxide, and the physical properties of the oxide thin film may change in the thickness direction thereof.
    Type: Grant
    Filed: June 12, 2015
    Date of Patent: November 1, 2016
    Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Hyun Jae Kim, Young Jun Tak, Doo Hyun Yoon, Sung Pyo Park, Heesoo Lee
  • Patent number: 9461242
    Abstract: A magnetic cell includes a free region between an intermediate oxide region (e.g., a tunnel barrier) and a secondary oxide region. Both oxide regions may be configured to induce magnetic anisotropy (“MA”) with the free region, enhancing the MA strength of the free region. A getter material proximate to the secondary oxide region is formulated and configured to remove oxygen from the secondary oxide region, reducing an oxygen concentration and an electrical resistance of the secondary oxide region. Thus, the secondary oxide region contributes only minimally to the electrical resistance of the cell core. Embodiments of the present disclosure therefore enable a high effective magnetoresistance, low resistance area product, and low programming voltage along with the enhanced MA strength. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.
    Type: Grant
    Filed: September 13, 2013
    Date of Patent: October 4, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej S. Sandhu, Witold Kula
  • Patent number: 9406883
    Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a first electrode over the semiconductor substrate. The first electrode has a ring-shaped cross section. The semiconductor device structure also includes a resistance-switching layer over the first electrode and a second electrode over the resistance-switching layer.
    Type: Grant
    Filed: January 8, 2015
    Date of Patent: August 2, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Ching-Pei Hsieh, Chern-Yow Hsu, Shih-Chang Liu
  • Patent number: 9385130
    Abstract: In order to achieve the reduction of contact resistance by forming a metal silicide layer with a sufficient thickness in an interface between a polycrystalline silicon plug and an upper conductive plug, the polycrystalline silicon plug contains germanium, which is ion-implanted before forming the metal silicide layer.
    Type: Grant
    Filed: January 25, 2012
    Date of Patent: July 5, 2016
    Assignee: PS4 Luxco S.a.r.l.
    Inventor: Yoichi Fukushima
  • Patent number: 9287134
    Abstract: Methods of selectively etching titanium oxide relative to silicon oxide, silicon nitride and/or other dielectrics are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and/or a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium oxide. The plasmas effluents react with exposed surfaces and selectively remove titanium oxide while very slowly removing other exposed materials. A direction sputtering pretreatment is performed prior to the remote plasma etch and enables an increased selectivity as well as a directional selectivity. In some embodiments, the titanium oxide etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.
    Type: Grant
    Filed: January 17, 2014
    Date of Patent: March 15, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Xikun Wang, Lin Xu, Anchuan Wang, Nitin K. Ingle
  • Patent number: 9269707
    Abstract: In IC chips for display device driving, an operational amplifier is widely used in input and output circuits, and a capacitor in a medium withstanding voltage chip is used as a compensation capacitor. As for this product area, cost competitiveness is very important. Therefore, a MIS capacitor with good area efficiency is widely used. However, unlike a so-called varactor widely used in a VCO circuit, a characteristic of as small a voltage dependence of the capacitor as possible is used. Therefore, an additional process is added to reduce the voltage dependence of the capacitor, but there is a problem of an increase in process cost. A semiconductor substrate side capacitor electrode in a MIS capacitor within a first conduction type medium withstanding voltage chip used in an I/O circuit or the like on a semiconductor integrated circuit device is formed in a first conduction type low withstanding voltage well region.
    Type: Grant
    Filed: December 4, 2014
    Date of Patent: February 23, 2016
    Assignee: Synaptics Display Devices GK
    Inventors: Masatoshi Taya, Kunihiko Kato
  • Patent number: 9231204
    Abstract: Embodiments include low voltage embedded memory having conductive oxide and electrode stacks. A material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer.
    Type: Grant
    Filed: September 28, 2012
    Date of Patent: January 5, 2016
    Assignee: Intel Corporation
    Inventors: Elijah V. Karpov, Brian S. Doyle, Charles C. Kuo, Robert S. Chau, Eric R. Dickey, Michael Stephen Bowen, Sey-Shing Sun
  • Patent number: 9224644
    Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The remote plasma source may be used to provide a plasma surface treatment or as a source to incorporate dopants into a pre-deposited layer.
    Type: Grant
    Filed: December 26, 2012
    Date of Patent: December 29, 2015
    Assignee: Intermolecular, Inc.
    Inventors: Sandip Niyogi, Amol Joshi, Chi-I Lang, Salil Mujumdar
  • Patent number: 9218993
    Abstract: Provided is a method of forming a tantalum oxide-based film having good step coverage while controlling an oxygen concentration in the film. The method includes forming a tantalum nitride layer on a substrate by supplying a source gas including a tantalum and a nitriding agent into a process chamber wherein the substrate is accommodated under a condition where a chemical vapor deposition (CVD) reaction is caused; oxidizing the tantalum nitride layer by supplying an oxidizing agent into the process chamber under a condition where an oxidation reaction of the tantalum nitride layer by the oxidizing agent is unsaturated; and forming on the substrate a conductive tantalum oxynitride film wherein an oxygen is stoichiometrically insufficient with respect to the tantalum and a nitrogen by alternately repeating forming the tantalum nitride layer on the substrate and oxidizing the tantalum nitride layer a plurality of times.
    Type: Grant
    Filed: August 19, 2011
    Date of Patent: December 22, 2015
    Assignee: HITACHI KOKUSAI ELECTRIC, INC.
    Inventors: Kazuhiro Harada, Hideharu Itatani
  • Patent number: 9177784
    Abstract: Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.
    Type: Grant
    Filed: February 18, 2014
    Date of Patent: November 3, 2015
    Assignee: ASM IP Holdings B.V.
    Inventors: Petri Raisanen, Michael Givens, Mohith Verghese
  • Patent number: 9159829
    Abstract: Some embodiments include transistor constructions having a first insulative structure lining a recess within a base. A first conductive structure lines an interior of the first insulative structure, and a ferroelectric structure lines an interior of the first conductive structure. A second conductive structure is within a lower region of the ferroelectric structure, and the second conductive structure has an uppermost surface beneath an uppermost surface of the first conductive structure. A second insulative structure is over the second conductive structure and within the ferroelectric structure. A pair of source/drain regions are adjacent an upper region of the first insulative structure and are on opposing sides of the first insulative structure from one another.
    Type: Grant
    Filed: October 7, 2014
    Date of Patent: October 13, 2015
    Assignee: Micron Technology, Inc.
    Inventor: Durai Vishak Nirmal Ramaswamy
  • Patent number: 9099300
    Abstract: Disclosed is a multilayer insulator, a metal-insulator-metal (MIM) capacitor with the same, and a fabricating method thereof. The capacitor includes: a first electrode; an insulator disposed on the first electrode, the insulator including: a laminate structure in which an aluminum oxide (Al2O3) layer and a hafnium oxide (HfO2) layer are laminated alternately in an iterative manner and a bottom layer and a top layer are formed of the same material; and a second electrode disposed on the insulator.
    Type: Grant
    Filed: July 14, 2009
    Date of Patent: August 4, 2015
    Assignee: Magnachip Semiconductor, Ltd.
    Inventors: Kwan-Soo Kim, Soon-Wook Kim
  • Patent number: 9093636
    Abstract: Electronic apparatus, systems, and methods include a resistive random access memory cell having an oxygen gradient in a variable resistive region of the resistive random access memory cell and methods of forming the resistive random access memory cell. Oxygen can be incorporated into the resistive random access memory cell by ion implantation. Additional apparatus, systems, and methods are disclosed.
    Type: Grant
    Filed: January 30, 2012
    Date of Patent: July 28, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Swapnil Lengade, Dale W. Collins, Durai Vishak Nirmal Ramaswamy, Yongjun Jeff Hu
  • Patent number: 9071222
    Abstract: A microacoustic component includes an active layer and an electrode. The electrode includes a first metal layer facing the active layer, a second metal layer facing away from the active layer, and a third layer arranged between the first metal layer and the second metal layer. The third layer serves as a diffusion barrier.
    Type: Grant
    Filed: October 14, 2011
    Date of Patent: June 30, 2015
    Assignee: EPCOS AG
    Inventors: Andreas Link, Gudrun Henn, Rainer Braun
  • Patent number: 9054225
    Abstract: An embodiment of an electronic device integrated in a chip of semiconductor material and an embodiment of a corresponding production method are proposed. The electronic device includes a capacitor having a first conductive plate, a second conductive plate, and an insulating layer for insulating the first plate from the second plate. In an embodiment of the disclosure, at least a selected one between the first plate and the second plate has a non-uniform thickness.
    Type: Grant
    Filed: December 29, 2009
    Date of Patent: June 9, 2015
    Assignee: STMicroelectronics S.r.l.
    Inventor: Antonio Di Franco
  • Patent number: 9048186
    Abstract: A method for forming an integrated circuit is provided. The method includes forming a gate dielectric structure over a substrate. A titanium-containing sacrificial layer is formed, contacting the gate dielectric structure. The whole titanium-containing sacrificial layer is substantially removed.
    Type: Grant
    Filed: September 10, 2010
    Date of Patent: June 2, 2015
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kuo Bin Huang, Hsin-Chien Lu, Ryan Chia-Jen Chen, Chi-Ming Yang, Chyi Shyuan Chern, Chin-Hsiang Lin
  • Publication number: 20150132905
    Abstract: The NVM device includes a semiconductor substrate having a first region and a second region. The NVM device includes a data-storing structure formed in the first region and designed operable to retain charges. The NVM device includes a capacitor formed in the second region and coupled with the data-storing structure for data operations. The data-storing structure includes a first doped well of a first-type in the semiconductor substrate. The data-storing structure includes a first gate dielectric feature on the first doped well. The data-storing structure includes a first gate electrode disposed on the first gate dielectric feature and configured to be floating. The capacitor includes a second doped well of the first-type. The capacitor includes a second gate dielectric feature on the second doped well. The capacitor also includes a second gate electrode disposed on the second gate dielectric feature and connected to the first gate electrode.
    Type: Application
    Filed: November 17, 2014
    Publication date: May 14, 2015
    Inventors: Ta-Chuan Liao, Chien-Kuo Yang, Felix Ying-Kit Tsui, Shih-Hsien Chen, Liang-Tai Kuo, Chun-Yao Ko
  • Patent number: 9029170
    Abstract: A magnetic tunnel junction (MTJ) device is formed by a process that includes forming a trench in a substrate and depositing an MTJ structure within the trench. The MTJ structure includes a bottom electrode, a fixed layer, a tunnel barrier layer, a free layer, and a top electrode. The process includes applying reverse photo etching to remove material that is not directly over the trench. The process also includes plagiarizing the MTJ structure without performing a photo-etch process on the MTJ structure.
    Type: Grant
    Filed: January 4, 2013
    Date of Patent: May 12, 2015
    Assignee: QUALCOMM Incorporated
    Inventor: Xia Li
  • Patent number: 9029178
    Abstract: A method for producing a device including plural cavities defined between a substrate in at least one given semiconductor material and a membrane resting on a top of insulating posts projecting from the substrate, the method allowing a height of the cavity or cavities to be adapted independently of a height of the insulating posts and allowing cavities of different heights to be formed.
    Type: Grant
    Filed: November 8, 2012
    Date of Patent: May 12, 2015
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Vincent Larrey, Jean-Philippe Polizzi
  • Patent number: 9012298
    Abstract: A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a flash layer between the dielectric layer and the first electrode layer. A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capping layer between the dielectric layer and the second electrode layer. The flash layer and the capping layer can be formed using an atomic layer deposition (ALD) technique. The precursor materials used for forming the flash layer and the capping layer are selected such they include at least one metal-oxygen bond. Additionally, the precursor materials are selected to also include “bulky” ligands.
    Type: Grant
    Filed: December 31, 2012
    Date of Patent: April 21, 2015
    Assignees: Intermolecular, Inc., Elpida Memory, Inc.
    Inventors: Sandra G. Malhotra, Hiroyuki Ode, Xiangxin Rui
  • Patent number: 8999811
    Abstract: An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel. Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.
    Type: Grant
    Filed: August 29, 2013
    Date of Patent: April 7, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuta Endo, Toshinari Sasaki, Kosei Noda, Mizuho Sato
  • Patent number: 8987080
    Abstract: Provided are methods for making metal gates suitable for FinFET structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a PMOS work function layer having a positive work function value; depositing an NMOS work function layer; depositing an NMOS work function cap layer over the NMOS work function layer; removing at least a portion of the PMOS work function layer or at least a portion of the NMOS work function layer; and depositing a fill layer. Depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer may comprise atomic layer deposition of TiN, TiSiN, or TiAlN. Either PMOS or NMOS may be deposited first.
    Type: Grant
    Filed: April 18, 2013
    Date of Patent: March 24, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Xinliang Lu, Seshadri Ganguli, Atif Noori, Maitreyee Mahajani, Shih Chung Chen, Yu Lei, Xinyu Fu, Wei Tang, Srinivas Gandikota
  • Patent number: 8980744
    Abstract: This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for lattice matching characteristics. This material may be created from a relatively inexpensive metal oxide which is processed to adopt a conductive, but difficult-to-produce oxide state, with specific crystalline form; to provide one example, specific materials are disclosed that are compatible with the growth of rutile phase titanium dioxide (TiO2) for use as a dielectric, thereby leading to predictable and reproducible higher dielectric constant and lower effective oxide thickness and, thus, greater part density at lower cost.
    Type: Grant
    Filed: November 13, 2012
    Date of Patent: March 17, 2015
    Assignees: Intermolecular, Inc., Elpida Memory, Inc.
    Inventors: Hanhong Chen, Toshiyuki Hirota, Pragati Kumar, Xiangxin Rui, Sunil Shanker
  • Patent number: 8975134
    Abstract: A doped fullerene-based conductive material can be used as an electrode, which can contact a dielectric such as a high k dielectric. By aligning the dielectric with the band gap of the doped fullerene-based electrode, e.g., the conduction band minimum of the dielectric falls into one of the band gaps of the doped fullerene-based material, thermionic leakage through the dielectric can be reduced, since the excited electrons or holes in the electrode would need higher thermal excitation energy to overcome the band gap before passing through the dielectric layer.
    Type: Grant
    Filed: December 27, 2012
    Date of Patent: March 10, 2015
    Assignee: Intermolecular, Inc.
    Inventors: Sergey Barabash, Dipankar Pramanik, Xuena Zhang
  • Patent number: 8956939
    Abstract: A method for forming a resistive random access memory (RRAM) device is disclosed. The method comprises forming a first electrode, forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ALD) and forming a second electrode by thermal atomic layer deposition (ALD), where the resistive switching layer is interposed between the first electrode and the second electrode. Forming the resistive switching oxide may be performed without exposing a surface of the switching oxide layer to a surface-modifying plasma treatment after depositing the metal oxide.
    Type: Grant
    Filed: April 29, 2013
    Date of Patent: February 17, 2015
    Assignee: ASM IP Holding B.V.
    Inventors: Qi Xie, Vladimir Machkaoutsan, Jan Willem Maes, Michael Givens, Petri Raisanen
  • Patent number: 8940388
    Abstract: Methods of forming an insulative element are described, including forming a first metal oxide material having a first dielectric constant, forming a second metal oxide material having a second dielectric constant different from the first, and heating at least portions of the structure to crystallize at least a portion of at least one of the first dielectric material and the second dielectric material. Methods of forming a capacitor are described, including forming a first electrode, forming a dielectric material with a first oxide and a second oxide over the first electrode, and forming a second electrode over the dielectric material. Structures including dielectric materials are also described.
    Type: Grant
    Filed: March 2, 2011
    Date of Patent: January 27, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Vassil Antonov, Jennifer K. Sigman, Vishwanath Bhat, Matthew N. Rocklein, Bhaskar Srinivasan, Chris Carlson
  • Patent number: 8940601
    Abstract: A manufacturing method of a semiconductor device includes the following steps. Firstly, a lower electrode is formed over a substrate (semiconductor substrate). Successively, the lower electrode is primarily crystallized. Successively, a capacitance dielectric layer is formed over the lower electrode after primarily crystallized. Successively, the capacitance dielectric layer is secondarily crystallized. Then, an upper electrode is formed over the capacitance dielectric layer.
    Type: Grant
    Filed: July 6, 2012
    Date of Patent: January 27, 2015
    Assignee: Renesas Electronics Corporation
    Inventors: Misato Sakamoto, Youichi Yamamoto, Masayuki Tachikawa, Yoshitake Kato
  • Patent number: 8937020
    Abstract: One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.
    Type: Grant
    Filed: June 20, 2013
    Date of Patent: January 20, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Keiji Sato
  • Publication number: 20140370673
    Abstract: An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.
    Type: Application
    Filed: September 2, 2014
    Publication date: December 18, 2014
    Inventors: Marina Zelner, Paul Bun Cheuk Woo, Mircea Capanu, Susan C. Nagy
  • Patent number: 8906704
    Abstract: A lower electrode film is formed above a substrate. A ferroelectric film is formed above the lower electrode film. An amorphous intermediate film of a perovskite-type conductive oxide is formed above the ferroelectric film. A first upper electrode film comprising oxide of at least one metal selected from a group of Pt, Pd, Rh, Ir, Ru, and Os is formed on the intermediate film. The intermediate film is crystallized by carrying out a first heat treatment in an atmosphere containing an oxidizing gas after the formation of the first upper electrode film. After the first heat treatment, a second upper electrode film comprising oxide of at least one metal selected from a group of Pt, Pd, Rh, Ir, Ru, and Os is formed on the first upper electrode film, at a temperature lower than the growth temperature for the first upper electrode film.
    Type: Grant
    Filed: May 18, 2011
    Date of Patent: December 9, 2014
    Assignee: Fujitsu Semiconductor Limited
    Inventor: Wensheng Wang
  • Patent number: 8907405
    Abstract: Semiconductor structures with dual trench regions and methods of manufacturing the semiconductor structures are provided herein. The method includes forming a gate structure on an active region and high-k dielectric material formed in one or more trenches adjacent to the active region. The method further includes forming a sacrificial material over the active region and portions of the high-k dielectric material adjacent sidewalls of the active region. The method further includes removing unprotected portions of the high-k dielectric material, leaving behind a liner of high-k dielectric material on the sidewalls of the active region. The method further includes removing the sacrificial material and forming a raised source and drain region adjacent to sidewalls of the gate structure.
    Type: Grant
    Filed: April 18, 2011
    Date of Patent: December 9, 2014
    Assignee: International Business Machines Corporation
    Inventors: Reinaldo A. Vega, Hongwen Yan
  • Patent number: 8895442
    Abstract: Electronic apparatus and methods of forming the electronic apparatus include cobalt titanium oxide on a substrate for use in a variety of electronic systems. The cobalt titanium oxide may be structured as one or more monolayers. The cobalt titanium oxide may be formed by a monolayer by monolayer sequencing process such as atomic layer deposition.
    Type: Grant
    Filed: June 3, 2013
    Date of Patent: November 25, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Kie Y. Ahn, Leonard Forbes
  • Patent number: 8853068
    Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a capping layer over the high-k dielectric layer in the first region, forming a first metal layer over capping layer in the first region and over the high-k dielectric in the second region, thereafter, forming a first gate stack in the first region and a second gate stack in the second region, protecting the first metal layer in the first gate stack while performing a treatment process on the first metal layer in the second gate stack, and forming a second metal layer over the first metal layer in the first gate stack and over the treated first metal layer in the second gate stack.
    Type: Grant
    Filed: December 19, 2011
    Date of Patent: October 7, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Peng-Fu Hsu, Kang-Cheng Lin, Kuo-Tai Huang
  • Patent number: 8846468
    Abstract: A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capacitor stack including an oxygen donor dopant incorporated within the dielectric layer. The oxygen donor dopants may be incorporated within the dielectric layer during the formation of the dielectric layer. The oxygen donor materials provide oxygen to the dielectric layer and reduce the concentration of oxygen vacancies, thus reducing the leakage current.
    Type: Grant
    Filed: December 17, 2012
    Date of Patent: September 30, 2014
    Assignees: Intermolecular, Inc., Elpida Memory, Inc.
    Inventors: Xiangxin Rui, Sergey Barabash
  • Patent number: 8835273
    Abstract: A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive metal oxide formed using a high temperature, low pressure ALD process. The high temperature ALD process results in a layer with enhanced crystallinity, higher density, reduced shrinkage, and lower carbon contamination. The high temperature ALD process can be used for either or both the bottom electrode and the top electrode layers.
    Type: Grant
    Filed: September 19, 2012
    Date of Patent: September 16, 2014
    Assignees: Intermolecular, Inc., Elpida Memory, Inc.
    Inventors: Hanhong Chen, Edward L Haywood, Sandra G Malhotra, Hiroyuki Ode
  • Patent number: 8828821
    Abstract: This disclosure provides a method of fabricating a semiconductor stack and associated device such as a capacitor and DRAM cell. In particular, a bottom electrode upon which a dielectric layer is to be grown may have a ruthenium-based surface. Lattice matching of the ruthenium surface with the dielectric layer (e.g., titanium oxide, strontium titanate or barium strontium titanate) helps promote the growth of rutile-phase titanium oxide, thereby leading to higher dielectric constant and lower effective oxide thickness. The ruthenium-based material also provides a high work function material, leading to lower leakage. To mitigate nucleation delay associated with the use of ruthenium, an adherence or glue layer based in titanium may be employed. A pretreatment process may be further employed so as to increase effective capacitor plate area, and thus promote even further improvements in dielectric constant and effective oxide thickness (“EOT”).
    Type: Grant
    Filed: September 18, 2009
    Date of Patent: September 9, 2014
    Assignees: Intermolecular, Inc., Elpida Memory, Inc.
    Inventors: Hanhong Chen, Nobumichi Fuchigami, Imran Hashim, Pragati Kumar, Sandra Malhotra, Sunil Shanker
  • Patent number: 8815678
    Abstract: In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO2, HfO2, (Zrx, Hf1-x)O2 (0<x<1), (Zry, Ti1-y)O2 (0<y<1), (Hfz, Ti1-z)O2 (0<z<1), (Zrk, Til, Hfm)O2 (0<k, l, m<1, k+l+m=1), by an atomic layer deposition process. The thin film transistor thus formed has a minimized leakage current and an increased capacitance.
    Type: Grant
    Filed: October 30, 2007
    Date of Patent: August 26, 2014
    Assignee: Renesas Electronics Corporation
    Inventors: Toshihiro Iizuka, Tomoe Yamamoto, Mami Toda, Shintaro Yamamichi
  • Patent number: 8796044
    Abstract: Device structures, fabrication methods, and design structures for a capacitor of a memory cell of ferroelectric random access memory device. The capacitor may include a first electrode comprised of a first conductor, a ferroelectric layer on the first electrode, a second electrode on the ferroelectric layer, and a cap layer on an upper surface of the second electrode. The second electrode may be comprised of a second conductor, and the cap layer may have a composition that is free of titanium. The second electrode may be formed by etching a layer of a material formed on a layer of the second conductor to define a hardmask and then modifying the remaining portion of that material in the hardmask to have a comparatively less etch rate, when exposed to a chlorine-based reactive ion etch chemistry, than when initially formed.
    Type: Grant
    Filed: September 27, 2012
    Date of Patent: August 5, 2014
    Assignee: International Business Machines Corporation
    Inventors: James E. Beecher, William J. Murphy, James S. Nakos, Bruce W. Porth
  • Patent number: 8785272
    Abstract: A method of reducing impurities in a high-k dielectric layer comprising the following steps. A substrate is provided. A high-k dielectric layer having impurities is formed over the substrate. The high-k dielectric layer being formed by an MOCVD or an ALCVD process. The high-k dielectric layer is annealed to reduce the impurities within the high-k dielectric layer.
    Type: Grant
    Filed: September 1, 2011
    Date of Patent: July 22, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Liang-Gi Yao, Ming-Fang Wang, Shih-Chang Chen, Mong-Song Liang
  • Patent number: 8778755
    Abstract: A method for fabricating a metal-insulator-metal capacitor (MIMCap) is disclosed. A first metal layer is provided on top of an oxide layer. A nitride layer is then deposited on the first metal layer. The nitride layer and the first metal layer are etched to form a MIMCap metal layer. The gaps among the MIMCap metal layer are filled with a plasma oxide, and the excess plasma oxide is polished using the nitride layer a polish stop. After removing the nitride layer, a dielectric layer and a second metal layer are deposited on the MIMCap metal layer. Finally, the dielectric layer and the second metal layer are etched to form a set of MIMCap structures.
    Type: Grant
    Filed: July 12, 2012
    Date of Patent: July 15, 2014
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Jason F. Ross, Chi-Hua Yang, Thomas J. McIntyre
  • Patent number: 8765555
    Abstract: A phase change memory cell includes a first electrode having a cylindrical portion. A dielectric material having a cylindrical portion is longitudinally over the cylindrical portion of the first electrode. Heater material is radially inward of and electrically coupled to the cylindrical portion of the first electrode. Phase change material is over the heater material and a second electrode is electrically coupled to the phase change material. Other embodiments are disclosed, including methods of forming memory cells which include first and second electrodes having phase change material and heater material in electrical series there-between.
    Type: Grant
    Filed: April 30, 2012
    Date of Patent: July 1, 2014
    Assignee: Micron Technology, Inc.
    Inventor: Damon E. Van Gerpen