Abstract: A method of making dense dielectrics layers via chemical solution deposition by adding inorganic glass fluxed material to high dielectric constant compositions, depositing the resultant mixture onto a substrate and annealing the substrate at temperatures between the softening point of the inorganic glass flux and the melting point of the substrate. A method of making a capacitor comprising a dense dielectric layer.

Abstract: A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate oxides formed from alloys such as cobalt-titanium are thermodynamically stable such that the gate oxides formed will have minimal reactions with a silicon substrate or other structures during any later high temperature processing stages. The process shown is performed at lower temperatures than the prior art, which inhibits unwanted species migration and unwanted reactions with the silicon substrate or other structures. Using a thermal evaporation technique to deposit the layer to be oxidized, the underlying substrate surface smoothness is preserved, thus providing improved and more consistent electrical properties in the resulting gate oxide.

Abstract: A Metal-Insulator-Metal (MIM) capacitor structure and method of fabricating the same in an integrated circuit improve capacitance density in a MIM capacitor structure by utilizing a sidewall spacer extending along a channel defined between a pair of legs that define portions of the MIM capacitor structure. Each of the legs includes top and bottom electrodes and an insulator layer interposed therebetween, as well as a sidewall that faces the channel. The sidewall spacer incorporates a conductive layer and an insulator layer interposed between the conductive layer and the sidewall of one of the legs, and the conductive layer of the sidewall spacer is physically separated from the top electrode of the MIM capacitor structure. In addition, the bottom electrode of a MIM capacitor structure may be ammonia plasma treated prior to deposition of an insulator layer thereover to reduce oxidation of the electrode.

Abstract: The present invention discloses a ferroelectric register and a method for manufacturing a capacitor of the same. The ferroelectric register is configured to reduce probability of data storage failure due to a weak state capacitor, by connecting a plurality of capacitors in parallel in a ferroelectric capacitor unit for storing data, instead of using a single capacitor, thereby improving storage reliability and stability. In addition, the ferroelectric register obtains a data sensing margin by pumping a cell plate signal into not a power voltage level but a pumping voltage level.

Abstract: A method for fabricating a semiconductor device is provided. The method comprising forming a first layer over a substrate and a second layer over the first layer. A patterned masking layer is subsequently provided over the second layer and a patterned second layer with outwardly tapered sidewalls is formed by isotropically etching exposed portions of the second layer. A patterned first layer is the formed by etching the first layer in accordance with the patterned second layer.

Abstract: The present invention provides a gate stack structure that has high mobilities and low interfacial charges as well as semiconductor devices, i.e., metal oxide semiconductor field effect transistors (MOSFETs) that include the same. In the semiconductor devices, the gate stack structure of the present invention is located between the substrate and an overlaying gate conductor. The present invention also provides a method of fabricating the inventive gate stack structure in which a high temperature annealing process (on the order of about 800° C.) is employed. The high temperature anneal used in the present invention provides a gate stack structure that has an interface state density, as measured by charge pumping, of about 8×1010 charges/cm2 or less, a peak mobility of about 250 cm2V-s or greater and substantially no mobility degradation at about 6.0×1012 inversion charges/cm2 or greater.

Abstract: Methods of fabricating semiconductor devices with high-k/metal gate features are disclosed. In some instances, methods of fabricating semiconductor devices with high-k/metal gate features are disclosed that prevent or reduce high-k/metal gate contamination of non-high-k/metal gate wafers and production tools. In some embodiments, the method comprises forming an interfacial layer over a semiconductor substrate on a front side of the substrate; forming a high-k dielectric layer and a capping layer over the interfacial layer; forming a metal layer over the high-k and capping layers; forming a polysilicon layer over the metal layer; and forming a dielectric layer over the semiconductor substrate on a back side of the substrate.

Abstract: A semiconductor device includes an insulating film provided over a semiconductor substrate, a conductive plug buried in the insulating film, an underlying conductive film which is provided on the conductive plug and on the insulating film and which has a flat upper surface, and a ferroelectric capacitor provided on the underlying conductive film. At least in a region on the conductive plug, the concentration of nitrogen in the underlying conductive film gradually decreases from the upper surface to the inside.

Abstract: Methods are provided for fabricating a transistor. An exemplary method involves depositing an oxide layer overlying a layer of semiconductor material, forming an oxygen-diffusion barrier layer overlying the oxide layer, forming a layer of high-k dielectric material overlying the oxygen-diffusion barrier layer, forming a layer of conductive material overlying the layer of high-k dielectric material, selectively removing portions of the layer of conductive material, the layer of high-k dielectric material, the oxygen-diffusion barrier layer, and the oxide layer to form a gate stack, and forming source and drain regions about the gate stack. When the conductive material is an oxygen-gettering conductive material, the oxygen-diffusion barrier layer prevents diffusion of oxygen from the deposited oxide layer to the oxygen-gettering conductive material.

Abstract: A manufacturing method of a semiconductor device of the present invention includes the step of forming an insulating film on a substrate, and the step of forming a high dielectric constant insulating film on the insulating film, and the step of forming a titanium aluminum nitride film on the high dielectric constant insulating film, wherein in the step of forming the titanium aluminum nitride film, formation of an aluminum nitride film and formation of a titanium nitride film are alternately repeated, and at that time, the aluminum nitride film is formed firstly and/or lastly.

Abstract: A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater than 1 ohm·cm over the TiN-comprising material where x is greater than 0 and y is from 0 to 1.4. A capacitor dielectric is formed over the conductive TiOxNy. Conductive second capacitor electrode material is formed over the capacitor dielectric. Other aspects and implementations are contemplated, including capacitors independent of method of fabrication.

Abstract: In one embodiment, the method of forming a dielectric layer includes supplying a first precursor at a temperature less than 400 degrees Celsius to a chamber including a substrate. The first precursor includes dysprosium. A first reaction gas is supplied to the chamber to react with the first precursor. A second precursor is supplied at a temperature less than 400 degrees Celsius to the chamber, and the second precursor includes scandium. A second reaction gas is supplied to the chamber to react with the second precursor.

Abstract: In a semiconductor device manufacturing method, an amorphous or microcrystalline metal oxide film is formed over a first metal film which is preferentially oriented along a predetermined crystal plane. After that, a ferroelectric film is formed by a MOCVD method. When the ferroelectric film is formed, the metal oxide film formed over the first metal film is reduced to a second metal film and the ferroelectric film is formed over the second metal film. When the ferroelectric film is formed, the amorphous or microcrystalline metal oxide film is apt to be reduced uniformly. As a result, the second metal film the orientation of which is good is obtained and the ferroelectric film the orientation of which is good is formed over the second metal film. After the ferroelectric film is formed, an upper electrode is formed over the ferroelectric film.

Abstract: A semiconductor structure and a method of forming the same are provided. The semiconductor structure includes a substrate, a resistor and a metal gate structure. The substrate has a first area and a second area. The resistor is disposed in the first area, wherein the resistor does not include any metal layer. The metal gate structure is disposed in the second area.

Abstract: A method is provided for fabricating a ferroelectric capacitor structure including a method for etching and cleaning patterned ferroelectric capacitor structures in a semiconductor device. The method comprises etching portions of an upper electrode, etching ferroelectric material, and etching a lower electrode to define a patterned ferroelectric capacitor structure, and etching a portion of a lower electrode diffusion barrier structure. The method further comprises ashing the patterned ferroelectric capacitor structure using a first ashing process, where the ash comprises an oxygen/nitrogen/water-containing ash, performing a wet clean process after the first ashing process, and ashing the patterned ferroelectric capacitor structure using a second ashing process.

Abstract: High dielectric films of mixed transition metal oxides of titanium and tungsten, or titanium and tantalum, are formed by sequential chemical vapor deposition (CVD) of the respective nitrides and annealing in the presence of oxygen to densify and oxidize the nitrides. The resulting film is useful as a capacitative cell and resists oxygen diffusion to the underlying material, has high capacitance and low current leakage.

Abstract: Electronic apparatus and methods of forming the electronic apparatus include a cobalt titanium oxide film on a substrate for use in a variety of electronic systems. The cobalt titanium oxide film may be structured as one or more monolayers. The cobalt titanium oxide film may be formed by atomic layer deposition.

Abstract: A capacitor with zirconium oxide and a method for fabricating the same are provided. The method includes: forming a storage node; forming a multi-layered dielectric structure on the storage node, the multi-layered dielectric structure including a zirconium oxide (ZrO2) layer and an aluminum oxide (Al2O3) layer; and forming a plate electrode on the multi-layered dielectric structure.

Abstract: Semiconductor devices and fabrication methods are provided, in which metal transistor replacement gates are provided for CMOS transistors. The process provides dual or differentiated work function capability (e.g., for PMOS and NMOS transistors) in CMOS processes.

Abstract: The present invention provides an MIM capacitor using a high-k dielectric film preventing degradation of breakdown field strength of the MIM capacitor and suppressing the increase of the leakage current. The MIM capacitor comprises a first metal interconnect, a fabricated capacitance film, a fabricated upper electrode, and a third metal interconnect. The MIM capacitor is realized by forming an interlayer dielectric film comprising silicon oxide so as to cover the first metal interconnect, then forming a first opening in the interlayer dielectric film to a region corresponding to a via hole layer in the interlayer dielectric film just above the first metal interconnect so as not to expose the upper surface of the first metal interconnect, then forming a second opening to the inside of the first opening so as to expose the surface of the first metal interconnect and then forming a capacitance film and a third metal interconnect.

Abstract: A method for manufacturing a printed circuit board with a capacitor embedded therein which has a dielectric film using laser lift off, and a capacitor manufactured thereby. In the method, a dielectric film is formed on a transparent substrate and heat-treated. A first conductive layer is formed on the heat-treated dielectric film. A laser beam is irradiated onto a stack formed, from below the transparent substrate, to separate the transparent substrate from the stack. After the transparent substrate is separated from the stack, a second conductive layer is formed with a predetermined pattern on the dielectric film. Also, an insulating layer and a third conductive layer are formed on the first and second conductive layers to alternate with each other in a predetermined number.

Abstract: The present invention provides a high-quality semiconductor device in which deterioration in transistor characteristics and an increase in interface layer due to a gate insulating film are suppressed, and a method for manufacturing the same. In the present invention, an interface layer, a diffusion suppressing layer and a high dielectric constant insulating film are formed sequentially in this order on one surface of a silicon substrate.

Abstract: A method for manufacturing a printed circuit board with a capacitor embedded therein which has a dielectric film using laser lift off, and a capacitor manufactured thereby. In the method, a dielectric film is formed on a transparent substrate and heat-treated. A first conductive layer is formed on the heat-treated dielectric film. A laser beam is irradiated onto a stack formed, from below the transparent substrate, to separate the transparent substrate from the stack. After the transparent substrate is separated from the stack, a second conductive layer is formed with a predetermined pattern on the dielectric film. Also, an insulating layer and a third conductive layer are formed on the first and second conductive layers to alternate with each other in a predetermined number.

Abstract: Provided are a memory device formed using one or more source materials not containing hydrogen as a constituent element and a method of manufacturing the memory device.

Abstract: Apparatus and methods for evaporating metal onto semiconductor wafers are disclosed. One such apparatus can include an evaporation chamber that includes a wafer holder, such as a dome, and a test wafer holder that is separate and spaced apart from the wafer holder. In certain implementations, the test wafer can be coupled to a cross beam supporting at least one shaper. A metal can be evaporated onto production wafers positioned in the wafer holder while metal is evaporated on a test wafer positioned in a test wafer holder. In some instances, the production wafers can be GaAs wafers. The test wafer can be used to make a quality assessment about the production wafers.

Abstract: A method for manufacturing a non-volatile memory device is described. The method comprises growing a layer in a siliconoxide consuming material, e.g. DyScO, on top of the upper layer of the layer where charge is stored. A non-volatile memory device is also described. In the non-volatile memory device, the interpoly/blocking dielectric comprises a layer in a siliconoxide consuming material, e.g. DyScO, on top of the upper layer of the layer where charge is stored, the siliconoxide consuming material having consumed at least part of the upper layer.

Abstract: A method of reducing impurities in a high-k dielectric layer comprising the following steps. A substrate is provided. A high-k dielectric layer having impurities is formed over the substrate. The high-k dielectric layer being formed by an MOCVD or an ALCVD process. The high-k dielectric layer is annealed to reduce the impurities within the high-k dielectric layer.

Abstract: A semiconductor device including a capacitor and a proximate high-voltage gate having a boron-barrier layer that ideally serves as part of both the capacitor dielectric and the (high voltage) HV gate oxide. The boron-barrier layer is preferably formed over a poly oxide layer that is in turn deposited on a substrate infused to create a neighboring wells, and N-well over which the capacitor will be formed, and P-well to be overlaid by the HV gate. The boron-barrier helps to reduce or eliminate the harmful effects of boron diffusion from the P-well during TEOS deposition of the gate oxide material.

Abstract: A first electrode film containing TiAlN and a main dielectric film containing tantalum oxide are formed over a semiconductor substrate. Anneal is performed in the state that the first electrode film and the main dielectric film are formed, to react aluminum (Al) in the first electrode film with oxygen (O) in the main dielectric film and form a subsidiary dielectric film containing aluminum oxide at an interface between the first electrode film and the main dielectric film. A second electrode film is formed facing the first electrode film via the main dielectric film and the subsidiary dielectric film.

Abstract: Deposited thin-film dielectrics having columnar grains and high dielectric constants are formed on heat treated and polished metal foil. The sputtered dielectrics are annealed at low oxygen partial pressures.

Abstract: In manufacturing a device using an organic TFT, it is essential to develop an element in which a channel length is short or a channel width is narrow to downsize a device. Based on the above, it is an object of the present invention to provide an organic TFT in which characteristic is improved. In view of the foregoing problem, one feature of the present invention is that an element is baked after an organic semiconductor film is deposited. More specifically, one feature of the present invention is that the organic semiconductor film is heated under atmospheric pressure or under reduced pressure. Moreover, a baking process may be carried out in an inert gas atmosphere.

Abstract: Integrated circuit capacitors have composite dielectric layers therein. These composite dielectric layers include crystallization inhibiting regions that operate to increase the overall crystallization temperature of the composite dielectric layer. An integrated circuit capacitor includes first and second capacitor electrodes and a capacitor dielectric layer extending between the first and second capacitor electrodes. The capacitor dielectric layer includes a composite of a first dielectric layer extending adjacent the first capacitor electrode, a second dielectric layer extending adjacent the second capacitor electrode and an electrically insulating crystallization inhibiting layer extending between the first and second dielectric layers. The electrically insulating crystallization inhibiting layer is formed of a material having a higher crystallization temperature characteristic relative to the first and second dielectric layers.

Abstract: Nonvolatile memory devices and methods of fabricating the same are provided. In some embodiments, a nonvolatile memory device includes a lower conductive member formed on an upper part of or inside a substrate, a ferroelectric organic layer formed on the lower conductive member, a protective layer formed on the ferroelectric organic layer, and an upper conductive member formed on the protective layer to cross the lower conductive member.

Abstract: In one embodiment, the present invention provides a method of fabricating a semiconducting device that includes providing a substrate including at least one semiconducting region and at least one oxygen source region; forming an oxygen barrier material atop portions of an upper surface of the at least one oxygen region; forming a high-k gate dielectric on the substrate including the at least one semiconducting region, wherein oxygen barrier material separates the high-k gate dielectric from the at least one oxygen source material; and forming a gate conductor atop the high-k gate dielectric.

Abstract: A method of forming an integrated circuit includes forming a fluorine-passivated surface of a substrate. A device quality silicon oxide layer is formed by causing the fluorine-passivated surface to interact with an oxygen-containing gas. Hydroxyl groups are substantially formed on a surface of the device quality silicon oxide layer. A high dielectric constant (high-k) gate dielectric layer is formed on the surface of the device quality silicon oxide layer.

Abstract: A multi-dielectric film including at least one first dielectric film that is a composite film made of zirconium-hafnium-oxide and at least one second dielectric film that is a metal oxide film made of amorphous metal oxide. Adjacent ones of the dielectric films are made of different materials.

Abstract: In a BST thin film being a capacitor film in a capacitor element, the capacitor film is formed such that two kinds of chemical states of Sr(I) and Sr(II) exist at a portion of which depth is up to 2.5 nm from a surface thereof (surface layer portion of which thickness is 2.5 nm), an average concentration of Sr(I) is set as AC(I), an average concentration of Sr(II) is set as AC(II), and when “R=AC(II)/AC(I)”, a value of “R” is adjusted to be “0” (zero)<R?0.3, more preferably, “0” (zero)<R?0.1.

Abstract: By forming a highly non-conformal stressed overlayer, such as a contact etch stop layer, the efficiency of the stress transfer into the respective channel region of a field effect transistor may be significantly increased. For instance, non-conformal PECVD techniques may be used for forming highly stressed silicon nitride in a non-conformal manner, thereby achieving higher transistor performance for otherwise identical stress conditions.

Abstract: A memory cell in an integrated circuit is fabricated in part by forming a lower electrode feature, an island, a sacrificial feature, a gate feature, and a phase change feature. The island is formed on the lower electrode feature and has one or more sidewalls. It comprises a lower doped feature, a middle doped feature formed above the lower doped feature, and an upper doped feature formed above the middle doped feature. The sacrificial feature is formed above the island, while the gate feature is formed along each sidewall of the island. The gate feature overlies at least a portion of the middle doped feature of the island and is operative to control an electrical resistance therein. Finally, the phase feature is formed above the island at least in part by replacing at least a portion of the sacrificial feature with a phase change material. The phase change material is operative to switch between lower and higher electrical resistance states in response to an application of an electrical signal.

Abstract: A method of manufacturing a semiconductor device including forming a lower electrode over a substrate, increasing the temperature of the substrate with the lower electrode to a predetermined temperature under mixture gas atmosphere of inert gas and oxygen gas, forming a dielectric film on the lower electrode by using an organic metal raw material after the temperature reaches the predetermined temperature, and forming an upper electrode on the dielectric film.

Abstract: A method is provided to form densely spaced metal lines. A first set of metal lines is formed by etching a first metal layer. A thin dielectric layer is conformally deposited on the first metal lines. A second metal is deposited on the thin dielectric layer, filling gaps between the first metal lines. The second metal layer is planarized to form second metal lines interposed between the first metal lines, coexposing the thin dielectric layer and the second metal layer at a substantially planar surface. In some embodiments, planarization continues to remove the thin dielectric covering tops of the first metal lines, coexposing the first metal lines and the second metal lines, separated by the thin dielectric layer, at a substantially planar surface.

Abstract: Disclosed is a metal capacitor including a lower electrode having hemispherical metal grains thereon. The metal capacitor includes a lower metal electrode containing Ti, hemispherical metal grains containing Pd and formed on the lower metal electrode containing Ti, a dielectric layer formed on the lower metal electrode containing Ti and the hemispherical metal grains containing Pd, and an upper metal electrode formed on the dielectric layer.

Abstract: A method for manufacturing a capacitor of a semiconductor device includes forming a lower metal layer over a substrate, forming a dielectric layer over the lower metal layer, forming an upper metal layer over the dielectric layer, forming an upper electrode and a dielectric layer pattern by performing a reactive ion etching process with respect to the upper metal layer using the dielectric layer as an etch stop layer, and exposing a top surface of the lower metal layer, and performing a chemical down-stream etch (CDE) process to remove a by-product of a sidewall of the upper electrode.

Abstract: A capacitor includes a pillar-type storage node, a supporter filling an inner empty crevice of the storage node, a dielectric layer over the storage node, and a plate node over the dielectric layer.

Abstract: A pumping MOS capacitor includes a substrate which is conductive and includes an irregular surface, a dielectric film formed along the irregular surface of the substrate and a gate formed on the dielectric film.

Abstract: Provided are a ferroelectric recording medium and a method of manufacturing the same. The ferroelectric recording medium includes a substrate, a plurality of supporting layers which are formed on the substrate, each of the supporting layers having at least two lateral surfaces; and data recording layers formed on the lateral surfaces of the supporting layers. First and second data recording layers may be respectively disposed on two facing lateral surfaces of each of the supporting layers. The supporting layers may be polygonal pillars having at least three lateral surfaces. A plurality of the supporting layers can be disposed at uniform intervals in a two-dimensional array.

Abstract: A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.

Abstract: A capacitor and a method of fabricating the capacitor are provided herein. The capacitor can be formed by forming two or more dielectric layers and a lower electrode, wherein at least one of the two or more dielectric layers is formed before the lower electrode is formed.

Abstract: A capacitor for a semiconductor device having a dielectric film between an upper electrode and a lower electrode is featured in that the dielectric film includes an alternately laminated film of hafnium oxide and titanium oxide at an atomic layer level.

Abstract: The use of a conductive bidimensional perovskite as an interface between a silicon, metal, or amorphous oxide substrate and an insulating perovskite deposited by epitaxy, as well as an integrated circuit and its manufacturing process comprising a layer of an insulating perovskite deposited by epitaxy to form the dielectric of capacitive elements having at least an electrode formed of a conductive bidimensional perovskite forming an interface between said dielectric and an underlying silicon, metal, or amorphous oxide substrate.