Having Adhesion Promoting Layer Patents (Class 438/628)
  • Patent number: 10340172
    Abstract: This semiconductor wafer surface protection film has a substrate layer A, an adhesive absorption layer B, and adhesive surface layer C, in the stated order. The adhesive absorption layer B comprises an adhesive composition containing a thermoset resin b1, said adhesive absorption layer B having a minimum value G?bmin of the storage elastic modulus G?b in the range of 25° C. to less than 250° C. of 0.001 MPa to less than 0.1 MPa, a storage elastic modulus G?b250 at 250° C. of 0.005 MPa or above, and a temperature at which G?bmin is exhibited of 50-150° C. The adhesive surface layer C has a minimum value G?cmin of the storage elastic modulus G?c in the range of 25° C. to less than 250° C. of 0.03 MPa.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: July 2, 2019
    Assignee: MITSUI CHEMICALS TOHCELLO, INC.
    Inventors: Jun Kamada, Noboru Kawasaki, Shinichi Usugi, Makoto Sukegawa, Jin Kinoshita, Kouji Igarashi, Akimitsu Morimoto
  • Patent number: 10312125
    Abstract: A protective tape that improves solder bonding properties and reduces wafer warping. The protective tape includes, in the following order, an adhesive agent layer, a first thermoplastic resin layer, a second thermoplastic resin layer, and a matrix film layer. The protective tape satisfies the conditions expressed by the following formulae (1) to (3): Ga>Gb??(1) Ta<Tb??(2) (Ga*Ta+Gb*Tb)/(Ta+Tb)?1.4E+06 Pa.??(3) Ga represents a shear storage modulus of the first thermoplastic resin layer at a pasting temperature at which the protective tape is pasted; Gb represents a shear storage modulus of the second thermoplastic resin layer at the pasting temperature at which the protective tape is pasted; Ta represents a thickness of the first thermoplastic resin layer; and Tb represents a thickness of the second thermoplastic resin layer.
    Type: Grant
    Filed: June 3, 2016
    Date of Patent: June 4, 2019
    Assignee: DEXERIALS CORPORATION
    Inventors: Hironobu Moriyama, Hidekazu Yagi, Tomoyuki Ishimatsu, Katsuyuki Ebisawa, Keiji Honjyo, Junichi Kaneko
  • Patent number: 9653353
    Abstract: Described herein are methods of filling features with tungsten and related systems and apparatus. The methods include inside-out fill techniques as well as conformal deposition in features. Inside-out fill techniques can include selective deposition on etched tungsten layers in features. Conformal and non-conformal etch techniques can be used according to various implementations. The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as vertical NAND (VNAND) word lines. Examples of applications include logic and memory contact fill, DRAM buried word line fill, vertically integrated memory gate/word line fill, and 3-D integration with through-silicon vias (TSVs).
    Type: Grant
    Filed: March 27, 2013
    Date of Patent: May 16, 2017
    Assignee: Novellus Systems, Inc.
    Inventors: Anand Chandrashekar, Esther Jeng, Raashina Humayun, Michal Danek, Juwen Gao, Deqi Wang
  • Patent number: 9570455
    Abstract: A method of making a monolithic three dimensional NAND string including forming a stack of alternating layers of insulating first material and sacrificial second material different from the first material over a major surface of the substrate, forming a front side opening in the stack, forming at least one charge storage region in the front side opening and forming a tunnel dielectric layer over the at least one charge storage region in front side opening. The method also includes forming a semiconductor channel over the tunnel dielectric layer in the front side opening, forming a back side opening in the stack and selectively removing at least portions of the second material layers to form back side recesses between adjacent first material layers.
    Type: Grant
    Filed: November 25, 2014
    Date of Patent: February 14, 2017
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Rahul Sharangpani, Raghuveer S. Makala, Senaka Krishna Kanakamedala, Sateesh Koka, Yao-Sheng Lee, George Matamis
  • Patent number: 9275952
    Abstract: An electrical device including an opening in a low-k dielectric material, and a copper including structure present within the opening for transmitting electrical current. A liner is present between the opening and the copper including structure. The liner includes a superlattice structure comprised of a metal oxide layer, a metal layer present on the metal oxide layer, and a metal nitride layer that is present on the metal layer. A first layer of the superlattice structure that is in direct contact with the low-k dielectric material is one of said metal oxide layer and a final layer of the superlattice structure that is in direct contact with the copper including structure is one of the metal nitride layers.
    Type: Grant
    Filed: January 24, 2014
    Date of Patent: March 1, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Donald F. Canaperi, Daniel C. Edelstein, Alfred Grill, Son V. Nguyen, Takeshi Nogami, Deepika Priyadarshini, Hosadurga Shobha
  • Patent number: 9240347
    Abstract: Described herein are methods of filling features with tungsten and related systems and apparatus. The methods include inside-out fill techniques as well as conformal deposition in features. Inside-out fill techniques can include selective deposition on etched tungsten layers in features. Conformal and non-conformal etch techniques can be used according to various implementations. The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as vertical NAND (VNAND) word lines. Examples of applications include logic and memory contact fill, DRAM buried word line fill, vertically integrated memory gate/word line fill, and 3-D integration with through-silicon vias (TSVs).
    Type: Grant
    Filed: September 30, 2014
    Date of Patent: January 19, 2016
    Assignee: Novellus Systems, Inc.
    Inventors: Anand Chandrashekar, Esther Jeng, Raashina Humayun, Michal Danek, Juwen Gao, Deqi Wang
  • Patent number: 9202786
    Abstract: Devices and methods for providing low-resistance interconnects in a semiconductor device are provided. Specifically, one or more embodiments of the present invention relate to disposing a conductive material in a trench without disposing a resistive barrier material between the conductive material and the sidewalls of the trench so that the conductive material takes up the full width of the trench. For example, the trench may be disposed over one or more contacts made of a barrier material such as titanium nitride that also acts as a seed, and the conductive material may be grown on top of the titanium nitride to fill the trench.
    Type: Grant
    Filed: December 29, 2010
    Date of Patent: December 1, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Jaydeb Goswami, Allen McTeer
  • Patent number: 9153538
    Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes conductive features disposed over a workpiece, each conductive feature including a conductive line portion and a via portion. A barrier layer is disposed on sidewalls of each conductive feature and on a bottom surface of the via portion of each conductive feature. The barrier layer includes a dielectric layer. A first insulating material layer is disposed beneath a portion of the conductive line portion of each conductive feature. A second insulating material layer is disposed between the conductive features. A third insulating material layer is disposed beneath the first insulating material layer and the second insulating material layer. A lower portion of the via portion of each of the conductive features is formed within the third insulating material layer.
    Type: Grant
    Filed: August 22, 2013
    Date of Patent: October 6, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Chi Ko, Pei-Wen Huang, Chih-Hao Chen, Kuang-Yuan Hsu, Tze-Liang Lee
  • Patent number: 9099465
    Abstract: Metal interconnections are formed in an integrated circuit by forming a wide trench in a dielectric layer. A dielectric fin of a second dielectric material is formed in the trench. Conductive plugs and metal lines are formed on both sides of the fin.
    Type: Grant
    Filed: October 14, 2013
    Date of Patent: August 4, 2015
    Assignee: STMicroelectronics, Inc.
    Inventor: John H. Zhang
  • Patent number: 9070639
    Abstract: In sophisticated semiconductor devices, manufacturing techniques and etch masks may be formed on the basis of a mask layer stack which comprises an additional mask layer, which may receive an opening on the basis of lithography techniques. Thereafter, the width of the mask opening may be reduced by applying a selective deposition or growth process, which thus results in a highly uniform and well-controllable adjustment of the target width of the etch mask prior to performing the actual patterning process, for instance for forming sophisticated contact openings, via openings and the like.
    Type: Grant
    Filed: March 23, 2011
    Date of Patent: June 30, 2015
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Dmytro Chumakov, Volker Grimm
  • Patent number: 9048224
    Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes: first and second stacked bodies, first and second semiconductor pillars, a connection portion, a memory film, and a partitioning insulating layer. The stacked bodes include electrode films stacked along a first axis and an inter-electrode insulating film provided between the electrode films. Through-holes are provided in the stacked bodies. The semiconductor pillars are filled into the through-holes. The connection portion electrically connects the semiconductor pillars. The memory film is provided between the semiconductor pillars and the electrode films. The partitioning insulating layer partitions the first and second electrode films. A side surface of the first through-hole on the partitioning insulating layer side and a side surface of the second through-hole on the partitioning insulating layer side have a portion parallel to a plane orthogonal to a second axis from the first stacked body to the second stacked body.
    Type: Grant
    Filed: September 30, 2013
    Date of Patent: June 2, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tadashi Iguchi, Ryota Katsumata
  • Patent number: 9041226
    Abstract: In various embodiments, a chip arrangement is provided. The chip arrangement may include a chip carrier and a chip mounted on the chip carrier. The chip may include at least two chip contacts and an insulating adhesive between the chip and the chip carrier to adhere the chip to the chip carrier. The at least two chip contacts may be electrically coupled to the chip carrier.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: May 26, 2015
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Rainer Steiner, Edward Fuergut, Khalil Hosseini, Georg Meyer-Berg, Joachim Mahler
  • Patent number: 9040407
    Abstract: A method including depositing an alloying layer along a sidewall of an opening and in direct contact with a seed layer, the alloying layer includes a crystalline structure that cannot serve as a seed for plating a conductive material, exposing the opening to an electroplating solution including the conductive material, the conductive material is not present in the alloying layer, applying an electrical potential to a cathode causing the conductive material to deposit from the electroplating solution onto the cathode exposed at the bottom of the opening and causing the opening to fill with the conductive material, the cathode includes an exposed portion of the seed layer and excludes the alloying layer, and forming a first intermetallic compound along an intersection between the alloying layer and the conductive material, the first intermetallic compound is formed as a precipitate within a solid solution of the alloying layer and the conductive material.
    Type: Grant
    Filed: October 1, 2013
    Date of Patent: May 26, 2015
    Assignee: International Business Machines Corporation
    Inventors: Mukta G. Farooq, John A. Fitzsimmons, Troy L. Graves-Abe
  • Patent number: 9006095
    Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece including a conductive feature formed in a first insulating material and a second insulating material disposed over the first insulating material. The second insulating material has an opening over the conductive feature. The method includes forming a graphene-based conductive layer over an exposed top surface of the conductive feature within the opening in the second conductive material, and forming a carbon-based adhesive layer over sidewalls of the opening in the second insulating material. A carbon nano-tube (CNT) is formed in the patterned second insulating material over the graphene-based conductive layer and the carbon-based adhesive layer.
    Type: Grant
    Filed: February 19, 2013
    Date of Patent: April 14, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shin-Yi Yang, Ming Han Lee, Hsiang-Huan Lee, Hsien-Chang Wu
  • Patent number: 8993434
    Abstract: Methods for forming layers on a substrate having one or more features formed therein are provided herein. In some embodiments, a method for forming layers on a substrate having one or more features formed therein may include depositing a seed layer within the one or more features; and etching the seed layer to remove at least a portion of the seed layer proximate an opening of the feature such that the seed layer comprises a first thickness disposed on a lower portion of a sidewall of the feature proximate a bottom of the feature and a second thickness disposed on an upper portion of the sidewall proximate the opening of the feature and wherein the first thickness is greater than the second thickness.
    Type: Grant
    Filed: September 7, 2011
    Date of Patent: March 31, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Jick M. Yu, Rong Tao, Xinyu Fu
  • Patent number: 8969196
    Abstract: A semiconductor device can include an insulation layer on that is on a substrate on which a plurality of lower conductive structures are formed, where the insulation layer has an opening. A barrier layer is on a sidewall and a bottom of the opening of the insulation layer, where the barrier layer includes a first barrier layer in which a constituent of a first deoxidizing material is richer than a metal material in the first barrier layer and a second barrier layer in which a metal material in the second barrier layer is richer than a constituent of a second deoxidizing material. An interconnection is in the opening of which the sidewall and the bottom are covered with the barrier layer, the interconnection is electrically connected to the lower conductive structure.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: March 3, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-Ho Park, Gil-Heyun Choi, Byung-Lyul Park, Jong-Myeong Lee, Zung-Sun Choi, Hye-Kyung Jung
  • Publication number: 20150041982
    Abstract: Some implementations provide a semiconductor device (e.g., die) that includes a substrate, several metal layers and dielectric layers coupled to the substrate, a pad coupled to one of the plurality of metal layers, a first metal redistribution layer coupled to the pad, and a second metal redistribution layer coupled to the first metal redistribution layer. The second metal redistribution layer includes a cobalt tungsten phosphorous material. In some implementations, the first metal redistribution layer is a copper layer. In some implementations, the semiconductor device further includes a first underbump metallization (UBM) layer and a second underbump metallization (UBM) layer.
    Type: Application
    Filed: August 6, 2013
    Publication date: February 12, 2015
    Applicant: QUALCOMM Incorporated
    Inventors: Christine Sung-An Hau-Riege, You-Wen Yau, Kevin Patrick Caffey, Lizabeth Ann Keser, Gene H. McAllister, Reynante Tamunan Alvarado, Steve J. Bezuk, Damion Bryan Gastelum
  • Patent number: 8941239
    Abstract: A copper interconnect structure in a semiconductor device including an opening formed in a dielectric layer of the semiconductor device, the opening having sidewalls and a bottom. A first barrier layer is conformally deposited on the sidewalls and the bottom of the opening. A first seed layer is conformally deposited on the first barrier layer. A second barrier layer is conformally deposited on the first seed layer. A second seed layer is conformally deposited on the second barrier layer and a conductive plug is deposited in the opening of the dielectric layer.
    Type: Grant
    Filed: August 15, 2012
    Date of Patent: January 27, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Shau-Lin Shue, Hsiang-Huan Lee, Ching-Fu Yeh
  • Patent number: 8871636
    Abstract: A line trough and a via cavity are formed within a dielectric layer comprising a fluorosilicate glass (FSG) layer. A fluorine depleted adhesion layer is formed within the line trough and the via cavity either by a plasma treatment that removes fluorine from exposed surfaces of the FSG layer, or by deposition of a substantially fluorine-free dielectric layer. Metal is deposited within the line trough and the via cavity to form a metal line and a metal via. The fluorine depleted adhesion layer provides enhanced adhesion to the metal line compared with prior art structures in which a metal line directly contacts a FSG layer. The enhanced adhesion of metal with an underlying dielectric layer provides higher resistance to delamination for a semiconductor package employing lead-free C4 balls on a metal interconnect structure.
    Type: Grant
    Filed: October 7, 2013
    Date of Patent: October 28, 2014
    Assignee: International Business Machines Corporation
    Inventors: Mukta G. Farooq, Emily R. Kinser
  • Patent number: 8866313
    Abstract: A substrate includes a die-bonding zone and a glue spreading pattern. The die-bonding zone is set to bond a die. The glue spreading pattern is placed in the die-bonding zone and includes a containing space. The die is placed on the glue spreading pattern, an area of a bottom of the die is greater than an area of an opening of the glue spreading pattern, the containing room of the glue spreading pattern is filled with a glue, and the die is bonded to the substrate by means of the glue.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: October 21, 2014
    Assignee: Unistars Corporation
    Inventors: Tien-Hao Huang, Hsin-Hsie Lee, Yi-Chun Wu, Shang-Yi Wu
  • Patent number: 8828861
    Abstract: Methods for fabricating conductive metal lines of a semiconductor device are described herein. In one embodiment, such a method may comprise depositing a conductive material over a substrate, and depositing a first barrier layer on the conductive layer. Such a method may also comprise patterning a mask on the first barrier layer, the pattern comprising a layout of the conductive lines. Such an exemplary method may also comprise etching the conductive material and the first barrier layer using the patterned mask to form the conductive lines. In addition, a low temperature post-flow may be performed on the structure. The method may also include depositing a dielectric material over and between the patterned conductive lines.
    Type: Grant
    Filed: August 20, 2010
    Date of Patent: September 9, 2014
    Assignee: Macronix International Co., Ltd.
    Inventors: Tuung Luoh, Ming Da Cheng, Chin-Ta Su, Tahone Yang, Kuang-Chao Chen
  • Patent number: 8807184
    Abstract: Methods and systems for reinforcing the periphery of a semiconductor wafer bonded to a carrier are disclosed. In one embodiment, additional adhesive is applied to the semiconductor wafer prior to bonding. The additional adhesive seeps into a crevice between the carrier and wafer and provides reinforcement. In another embodiment, adhesive is applied to the crevice by a dispenser after the wafer is bonded to the glass carrier.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: August 19, 2014
    Assignee: International Business Machines Corporation
    Inventors: Sarah H. Knickerbocker, Jonathan H. Griffith
  • Patent number: 8772155
    Abstract: High aspect ratio trenches may be filled with metal that grows more from the bottom than the top of the trench. As a result, the tendency to form seams or to close off the trench at the top during filling may be reduced in some embodiments. Material that encourages the growth of metal may be formed in the trench at the bottom, while leaving the region of the trench near the top free of such material to encourage growth upwardly from the bottom.
    Type: Grant
    Filed: November 18, 2010
    Date of Patent: July 8, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Shai Haimson, Avi Rozenblat, Dror Horvitz, Maor Rotlain, Rotem Drori
  • Patent number: 8765597
    Abstract: A line trough and a via cavity are formed within a dielectric layer comprising a fluorosilicate glass (FSG) layer. A fluorine depleted adhesion layer is formed within the line trough and the via cavity either by a plasma treatment that removes fluorine from exposed surfaces of the FSG layer, or by deposition of a substantially fluorine-free dielectric layer. Metal is deposited within the line trough and the via cavity to form a metal line and a metal via. The fluorine depleted adhesion layer provides enhanced adhesion to the metal line compared with prior art structures in which a metal line directly contacts a FSG layer. The enhanced adhesion of metal with an underlying dielectric layer provides higher resistance to delamination for a semiconductor package employing lead-free C4 balls on a metal interconnect structure.
    Type: Grant
    Filed: October 7, 2013
    Date of Patent: July 1, 2014
    Assignee: International Business Machines Corporation
    Inventors: Mukta G. Farooq, Emily R. Kinser
  • Patent number: 8753460
    Abstract: Methods and systems for reinforcing the periphery of a semiconductor wafer bonded to a carrier are disclosed. In one embodiment, additional adhesive is applied to the semiconductor wafer prior to bonding. The additional adhesive seeps into a crevice between the carrier and wafer and provides reinforcement. In another embodiment, adhesive is applied to the crevice by a dispenser after the wafer is bonded to the glass carrier.
    Type: Grant
    Filed: January 28, 2011
    Date of Patent: June 17, 2014
    Assignee: International Business Machines Corporation
    Inventors: Sarah H. Knickerbocker, Jonathan H. Griffith
  • Patent number: 8729561
    Abstract: In one implementation, a method of forming a P type III-nitride material includes forming a getter material over a III-nitride material, the III-nitride material having residual complexes formed from P type dopants and carrier gas impurities. The method further includes gettering at least some of the carrier gas impurities, from at least some of the residual complexes, into the getter material to form the P type III-nitride material. In some implementations, the carrier gas impurities include hydrogen and the getter material includes at least partially titanium. An overlying material can be formed on the getter material prior to gettering at least some of the carrier gas impurities.
    Type: Grant
    Filed: April 24, 2012
    Date of Patent: May 20, 2014
    Assignee: International Rectifier Corporation
    Inventor: Michael A. Briere
  • Patent number: 8722532
    Abstract: A first wiring is disposed over a semiconductor substrate. A first via is disposed over the first wiring. Further, the bottom surface of the first via is in contact with the first wiring. A first insulation layer is disposed over the semiconductor substrate, and is in contact with at least the top surface of the first wiring and the side surface of the first via. At least a part of each side surface of the first wiring and the first via cuts off each metal crystal grain.
    Type: Grant
    Filed: August 6, 2012
    Date of Patent: May 13, 2014
    Assignee: Renesas Electronics Corporation
    Inventors: Tatsuya Usami, Hiroshi Kitajima
  • Patent number: 8716125
    Abstract: Embodiments of the present invention provide methods of in-situ vapor phase deposition of self-assembled monolayers as copper adhesion promoters and diffusion barriers. A copper region is formed in a dielectric layer. A diffusion barrier comprising a self-assembled monolayer is deposited over the copper region. A capping layer is deposited over the self-assembled monolayer. In some embodiments, the capping layer and self-assembled monolayer are deposited in the same process chamber.
    Type: Grant
    Filed: August 10, 2012
    Date of Patent: May 6, 2014
    Assignee: Globalfoundries Inc.
    Inventor: Jinhong Tong
  • Patent number: 8709939
    Abstract: A multilevel interconnect structure in a semiconductor device and methods for fabricating the same are described. The multilevel interconnect structure in the semiconductor device includes a first insulating layer formed on a semiconductor wafer, a Cu interconnect layer formed on the first insulating layer, a second insulating layer formed on the Cu interconnect layer, and a metal oxide layer formed at an interface between the Cu interconnect layer and the second insulating layer. The metal oxide layer is formed by immersion-plating a metal, such as Sn or Zn, on the Cu interconnect layer and then heat-treating the plated layer in an oxidizing atmosphere.
    Type: Grant
    Filed: October 2, 2012
    Date of Patent: April 29, 2014
    Assignees: Semiconductor Technology Academic Research Center, National University Corporation Tohoku University
    Inventors: Junichi Koike, Yoshito Fujii, Jun Iijima, Noriyoshi Shimizu, Kazuyoshi Maekawa, Koji Arita, Ryotaro Yagi, Masaki Yoshimaru
  • Patent number: 8691689
    Abstract: Methods for fabricating integrated circuits having low resistance device contacts are provided. One method includes depositing an ILD layer of insulating material overlying a device region that includes a metal silicide region. The ILD layer is etched to form a sidewall that defines a contact opening formed through the ILD layer exposing the metal silicide region. A liner is formed overlying the sidewall and the metal silicide region and defines an inner cavity in the contact opening. A copper layer is formed overlying the liner and at least partially filling the inner cavity. The copper layer is etched to expose an upper portion of the liner while leaving a copper portion disposed in a bottom portion of the inner cavity. Copper is electrolessly deposited on the copper portion to fill a remaining portion of the inner cavity.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: April 8, 2014
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Paul R. Besser, Sean X. Lin, Valli Arunachalam
  • Patent number: 8669181
    Abstract: Films having high hermeticity and a low dielectric constant can be used as copper diffusion barrier films, etch stop films, CMP stop films and other hardmasks during IC fabrication. Hermetic films can protect the underlying layers, such as layers of metal and dielectric, from exposure to atmospheric moisture and oxygen, thereby preventing undesirable oxidation of metal surfaces and absorption of moisture by a dielectric. Specifically, a bi-layer film having a hermetic bottom layer composed of hydrogen doped carbon and a low dielectric constant (low-k) top layer composed of low-k silicon carbide (e.g., high carbon content hydrogen doped silicon carbide) can be employed. Such bi-layer film can be deposited by PECVD methods on a partially fabricated semiconductor substrate having exposed layers of dielectric and metal.
    Type: Grant
    Filed: February 22, 2011
    Date of Patent: March 11, 2014
    Assignee: Novellus Systems, Inc.
    Inventors: Yongsik Yu, Pramod Subramonium, Zhiyuan Fang, Jon Henri, Elizabeth Apen, Dan Vitkavage
  • Patent number: 8669182
    Abstract: An interconnect structure is provided that has enhanced electromigration reliability without degrading circuit short yield, and improved technology extendibility. The inventive interconnect structure includes a dielectric material having a dielectric constant of about 3.0 or less. The dielectric material has at least one conductive material embedded therein. A noble metal cap is located directly on an upper surface of the at least one conductive region. The noble metal cap does not substantially extend onto an upper surface of the dielectric material that is adjacent to the at least one conductive region, and the noble cap material does not be deposited on the dielectric surface. A method fabricating such an interconnect structure utilizing a low temperature (about 300° C. or less) chemical deposition process is also provided.
    Type: Grant
    Filed: February 16, 2012
    Date of Patent: March 11, 2014
    Assignee: International Business Machines Corporation
    Inventors: Chih-Chao Yang, Daniel C. Edelstein
  • Patent number: 8642391
    Abstract: A method of forming, on a surface of a substrate, at least one hydrophilic attachment area for the purpose of self-assembling a component or a chip, in which a hydrophobic area, which delimits the hydrophilic attachment area, is produced.
    Type: Grant
    Filed: April 7, 2009
    Date of Patent: February 4, 2014
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Lea Di Cioccio, Francois Grossi, Pierric Gueguen, Laurent Vandroux
  • Patent number: 8629056
    Abstract: A method for fabricating an integrated circuit comprises forming a low-k dielectric layer over a semiconductor substrate, etching the low-k dielectric layer to form an opening, and treating the low-k dielectric layer with a gaseous organic chemical to cause a reaction between the low-k dielectric layer and the gaseous organic chemical. The gaseous organic chemical is free from silicon.
    Type: Grant
    Filed: May 13, 2011
    Date of Patent: January 14, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Chi Ko, Chia-Cheng Chou, Keng-Chu Lin, Tien-I Bao, Chen-Hua Yu
  • Patent number: 8623226
    Abstract: A method of making a shaped electrical conductor (610, 630) includes providing a first sheet of metal (319) and applying a first and second thermoplastic adhesive pattern (311, 312) to a first and a second surface thereof. The second pattern is are fully justified with the applied first pattern. The first sheet is etched to remove metal not covered by the patterns so that no metal bridges remain between disconnected coated portions. A second sheet of metal (339) is provided and a third and fourth thermoplastic adhesive pattern (333, 334) is applied to a first and second surface thereof. The third and fourth patterns are fully justified. The second sheet is etched as for the first sheet. Contact regions (315, 335) in the second and third patterns are joined to form electrical contact between the first and second sheets.
    Type: Grant
    Filed: April 12, 2012
    Date of Patent: January 7, 2014
    Assignee: Eastman Kodak Company
    Inventors: Donald S. Rimai, Roland R. Schindler, II, Christopher J. White
  • Patent number: 8609528
    Abstract: Methods for patterning high-density features are described herein. Embodiments of the present invention provide a method comprising patterning a first subset of a pattern, the first subset configured to form a plurality of lines over the substrate, and patterning a second subset of the pattern, the second subset configured to form a plurality of islands over the substrate, wherein said patterning the first subset and said patterning the second subset comprise at least two separate patterning operations.
    Type: Grant
    Filed: August 5, 2011
    Date of Patent: December 17, 2013
    Assignee: Marvell International Ltd.
    Inventors: Pantas Sutardja, Albert Wu, Winston Lee, Peter Lee, Chien-Chuan Wei, Runzi Chang
  • Patent number: 8586471
    Abstract: A method is disclosed for depositing multiple seed layers for metallic interconnects over a substrate, the substrate includes a patterned insulating layer which comprises an opening surrounded by a field, said opening has sidewalls and top corners, and the method including: depositing a continuous seed layer over the sidewalls, using a first set of deposition parameters; and depositing another seed layer over the substrate, including inside the opening and over a portion of said field, using a second set of deposition parameters, wherein: the second set of deposition parameters includes one deposition parameter which is different from any parameters in the first set, or whose value is different in the first and second sets; the continuous seed layer has a thickness in a range from about 20 ? to not more than 250 ? over the field; and the combined seed layers leave sufficient room for electroplating inside the opening.
    Type: Grant
    Filed: January 17, 2012
    Date of Patent: November 19, 2013
    Inventor: Uri Cohen
  • Patent number: 8569165
    Abstract: An interconnect structure for integrated circuits for copper wires in integrated circuits and methods for making the same are provided. Mn, Cr, or V containing layer forms a barrier against copper diffusing out of the wires, thereby protecting the insulator from premature breakdown, and protecting transistors from degradation by copper. The Mn, Cr, or V containing layer also promotes strong adhesion between copper and insulators, thus preserving the mechanical integrity of the devices during manufacture and use, as well as protecting against failure by electromigration of the copper during use of the devices and protecting the copper from corrosion by oxygen or water from its surroundings. In forming such integrated circuits, certain embodiments of the invention provide methods to selectively deposit Mn, Cr, V, or Co on the copper surfaces while reducing or even preventing deposition of Mn, Cr, V, or Co on insulator surfaces.
    Type: Grant
    Filed: October 20, 2010
    Date of Patent: October 29, 2013
    Assignee: President and Fellows of Harvard College
    Inventors: Roy Gerald Gordon, Harish B. Bhandari, Yeung Au, Youbo Lin
  • Patent number: 8569105
    Abstract: A method and apparatus is provided for forming a resistive memory device having good adhesion among the components thereof. A first conductive layer is formed on a substrate, and the surface of the first conductive layer is treated to add adhesion promoting materials to the surface. The adhesion promoting materials may form a layer on the surface, or they may incorporate into the surface or merely passivate the surface of the first conductive layer. A variable resistance layer is formed on the treated surface, and a second conductive layer is formed on the variable resistance layer. Adhesion promoting materials may also be included at the interface between the variable resistance layer and the second conductive layer.
    Type: Grant
    Filed: April 25, 2012
    Date of Patent: October 29, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Siu F. Cheng, Deenesh Padhi
  • Patent number: 8563423
    Abstract: A line trough and a via cavity are formed within a dielectric layer comprising a fluorosilicate glass (FSG) layer. A fluorine depleted adhesion layer is formed within the line trough and the via cavity either by a plasma treatment that removes fluorine from exposed surfaces of the FSG layer, or by deposition of a substantially fluorine-free dielectric layer. Metal is deposited within the line trough and the via cavity to form a metal line and a metal via. The fluorine depleted adhesion layer provides enhanced adhesion to the metal line compared with prior art structures in which a metal line directly contacts a FSG layer. The enhanced adhesion of metal with an underlying dielectric layer provides higher resistance to delamination for a semiconductor package employing lead-free C4 balls on a metal interconnect structure.
    Type: Grant
    Filed: July 27, 2011
    Date of Patent: October 22, 2013
    Assignee: International Business Machines Corporation
    Inventors: Mukta G. Farooq, Emily R. Kinser
  • Patent number: 8536058
    Abstract: A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin film to a reducing agent, thereby forming a seed layer. In one arrangement, the reducing agent comprises one or more organic compounds that contain at least one functional group selected from the group consisting of —OH, —CHO, and —COOH. In another arrangement, the reducing agent comprises an electric current.
    Type: Grant
    Filed: June 3, 2011
    Date of Patent: September 17, 2013
    Assignee: ASM International N.V.
    Inventors: Juhana Kostamo, Pekka J. Soininen, Kai-Erik Elers, Suvi Haukka
  • Patent number: 8445378
    Abstract: Memory cells in integrated circuit devices may be formed on the basis of functional molecules which may be positioned within via openings on the basis of appropriate patterning techniques, which may also be used for forming semiconductor-based integrated circuits. Consequently, memory cells may be formed on a “molecular” level without requiring extremely sophisticated patterning regimes, such as electron beam lithography and the like.
    Type: Grant
    Filed: July 20, 2010
    Date of Patent: May 21, 2013
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Stephan Kronholz, Markus Lenski, Ralf Richter
  • Patent number: 8440561
    Abstract: In a stacked chip configuration, the “inter chip” connection is established on the basis of functional molecules, thereby providing a fast and space-efficient communication between the different semiconductor chips.
    Type: Grant
    Filed: July 27, 2010
    Date of Patent: May 14, 2013
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Stephan Kronholz, Markus Lenski, Ralf Richter
  • Patent number: 8421200
    Abstract: A semiconductor integrated circuit device is made by stacking a plurality of semiconductor chips. The semiconductor integrated circuit device includes: a penetrating electrode formed to penetrate the plurality of semiconductor chips; a plurality of electrodes formed in respective layers constituting each of the plurality of semiconductor chips and having respective openings within which the penetrating electrode penetrates; and a plurality of vias each of which electrically connects electrodes of the plurality of electrodes located in adjacent layers. The vias are each formed so that the side face thereof is in contact with the penetrating electrode.
    Type: Grant
    Filed: April 3, 2007
    Date of Patent: April 16, 2013
    Assignee: Panasonic Corporation
    Inventors: Kenichi Tajika, Takehisa Kishimoto
  • Patent number: 8349725
    Abstract: The present invention is a method of manufacturing a semiconductor device comprising: forming a recess in an interlayer insulating film formed on a substrate surface, the recess being configured to be embedded with an upper conductive channel mainly made of copper to be electrically connected to a lower conductive channel; supplying a gas containing an organic compound of manganese, and forming a barrier layer made of a compound of manganese for preventing diffusion of copper to the interlayer insulating film, such that the barrier layer covers an exposed surface of the interlayer insulating film; after the formation of the barrier layer, supplying organic acid to the barrier layer in order to increase a ratio of manganese in the compound of manganese forming the barrier layer; after the supply of the organic acid, forming a seed layer mainly made of copper on a surface of the barrier layer; after the formation of the seed-layer, heating the substrate in order to separate out manganese from on the surface of
    Type: Grant
    Filed: February 20, 2009
    Date of Patent: January 8, 2013
    Assignee: Tokyo Electron Limited
    Inventors: Hiroshi Sato, Hitoshi Itoh, Kenji Matsumoto
  • Patent number: 8304341
    Abstract: The invention relates to a dicing die-bonding film having a pressure-sensitive adhesive layer (2) on a substrate material (1) and a die-bonding adhesive layer (3) on the pressure-sensitive adhesive layer (2), wherein the adhesion of the pressure-sensitive adhesive layer (2) to the die-bonding adhesive layer (3), as determined under the conditions of a peel angle of 15° and a peel point moving rate of 2.5 mm/sec. at 23° C., is different between a region (2a) corresponding to a work attachment region (3a) and a region (2b) corresponding to a part or the whole of the other region (3b), in the die-bonding adhesive layer (3), and satisfies the following relationship: adhesion of the pressure-sensitive adhesive layer (2a)<adhesion of the pressure-sensitive adhesive layer (2b), and the adhesion of the pressure-sensitive adhesive layer (2a) to the die-bonding adhesive layer (3) is not higher than 2.3 N/25 mm.
    Type: Grant
    Filed: January 3, 2011
    Date of Patent: November 6, 2012
    Assignee: Nitto Denko Corporation
    Inventors: Takeshi Matsumura, Masaki Mizutani, Sadahito Misumi
  • Patent number: 8298933
    Abstract: A layer of diffusion barrier or seed material is deposited on a semiconductor substrate having a recessed feature. The method may include a series of new deposition cycles, for example, a first net deposition cycle and a second net deposition cycle. The first net deposition cycle includes depositing a first deposited amount of the diffusion barrier or seed material and etching a first etched amount of the diffusion barrier or seed material. The second net deposition cycle including depositing a second deposited amount of the diffusion barrier or seed material and etching a second etched amount of the diffusion barrier or seed material. At least one of the process parameters of the first cycle differs from that of the second allows providing a graded deposition effects to reduce a risk of damaging any under layers and dielectric. A deposited layer of diffusion barrier or seed material is generally more conformal.
    Type: Grant
    Filed: May 15, 2009
    Date of Patent: October 30, 2012
    Assignee: Novellus Systems, Inc.
    Inventors: Roey Shaviv, Sanjay Gopinath, Peter Holverson, Anshu A. Pradhan
  • Patent number: 8278205
    Abstract: The present invention is a method for manufacturing a semiconductor device having a conductor and an insulating film on a substrate, the method including the steps of forming the conductor on the substrate, forming the insulating film on the conductor, removing the insulating film on the conductor, and blowing an organosilane gas and a hydrogen gas to reduce an oxidized region on the conductor, wherein the oxidized region on the conductor is formed when the insulating film is removed.
    Type: Grant
    Filed: February 25, 2009
    Date of Patent: October 2, 2012
    Assignee: Tokyo Electron Limited
    Inventor: Takaaki Matsuoka
  • Patent number: 8278139
    Abstract: A method and apparatus is provided for forming a resistive memory device having good adhesion among the components thereof. A first conductive layer is formed on a substrate, and the surface of the first conductive layer is treated to add adhesion promoting materials to the surface. The adhesion promoting materials may form a layer on the surface, or they may incorporate into the surface or merely passivate the surface of the first conductive layer. A variable resistance layer is formed on the treated surface, and a second conductive layer is formed on the variable resistance layer. Adhesion promoting materials may also be included at the interface between the variable resistance layer and the second conductive layer.
    Type: Grant
    Filed: September 25, 2009
    Date of Patent: October 2, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Siu F. Cheng, Deenesh Padhi
  • Patent number: 8263488
    Abstract: The invention relates to the deposition or attachment of materials to surfaces. It relates to a process for coating a surface with a first material and a second material, comprising the following steps: placing the first material on the said surface, inserting into the first material placed on the said surface precursor molecules of the second material, converting the said precursor molecules of the second material inserted into the first material into the said second material such that this second material becomes formed on the said surface to be coated and within the said first material placed on the said surface. The object of the process of the invention is to allow the deposition of materials of any type onto surfaces of any type.
    Type: Grant
    Filed: February 13, 2004
    Date of Patent: September 11, 2012
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Pascal Viel, Sami Ameur, Christophe Bureau